JPH1046113A - Low temperature adhesive film adhesive, lead frame and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a filmy adhesive which can be adhered at a low temp. and is esp. useful for an adhesive member of a semiconductor package prepd. by using a copper frame. SOLUTION: This filmy adhesive either comprises an adhesive layer contg. 100 pts.wt. adhesive resin having a glass transition point of 50-250 deg.C and 0.5-12 pts.wt. solvent or comprises 100 pts.wt. adhesive resin having a glass transition point of 50-250 deg.C, 0.5-12 pts.wt. solvent, and 0-10 pts.wt. coupling agent. A multilayer filmy adhesive is prepd. by sticking the filmy adhesive to at least one side of a filmy substrate. These adhesives are used as bonding members for adhering lead frames to semiconductor chips.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature adhesive film adhesive used for an adhesive member of a semiconductor package.
The present invention relates to a lead frame and a semiconductor device using the same.
The film adhesive of the present invention is particularly suitably used for a semiconductor package using a copper lead frame.

[0002]

2. Description of the Related Art In a semiconductor package, a composite adhesive film (or adhesive tape) in which an adhesive is applied to one or both sides of a film-like base material has a LOC (lead on chip) structure, a C-type structure.
It is used as a joining member for connecting a lead frame and a semiconductor chip in an OL (chip on lead) structure or a frame tab structure, and in a composite lead frame with a heat sink for connecting an inner lead and a heat spreader.

Conventionally, as an adhesive for joining a semiconductor lead frame and a semiconductor chip, a thermosetting adhesive such as an epoxy-based or rubber-modified epoxy-based adhesive, or a heat-resistant hot-melt adhesive such as polyimide or polyamideimide has been used. Is used.

[0004]

However, thermosetting adhesives such as epoxy-based and rubber-modified epoxy-based adhesives have excellent adhesive strength, but are inferior in heat resistance, and have a problem of contamination of semiconductor chips due to outgassing. is there. Heat-resistant hot-melt adhesives are attracting attention because they do not generate outgas and do not contaminate semiconductor chips. However, the bonding temperature for obtaining sufficient adhesive strength is high, and semiconductor chips are damaged or thermally degraded due to thermal stress. There is a problem. With the increase in the density of the semiconductor package and the size of the semiconductor chip, the above problem has become serious.

Further, when the material of the lead frame is copper, there is a problem that the surface of the copper is oxidized by heat at the time of joining, and as a result, a package crack occurs. Therefore, an adhesive which can be bonded at a low temperature and does not generate outgas is desired. The present invention solves such a problem and provides a film-like adhesive which can be bonded at low temperature, does not generate outgas, and has excellent reflow crack resistance, and a lead frame and a semiconductor device using the same. Things.

[0006]

The present inventors have conducted various studies to solve the above-mentioned problems, and as a result, when using a heat-resistant resin having a specific performance and leaving a predetermined amount of a solvent in the adhesive, The inventors have found that a film-like adhesive which can be bonded at low temperature and does not generate outgas can be obtained, and have completed the present invention. That is, the present invention first provides a low-temperature adhesive single-layer film adhesive described below. (A) An adhesive resin having a glass transition temperature (Tg) of 50 to 250 ° C. and a solvent of 0.1 part by weight based on 100 parts by weight of the adhesive resin.
A film adhesive comprising an adhesive layer containing 5 to 12 parts by weight. (B) A film adhesive comprising an adhesive layer containing 100 parts by weight of an adhesive resin having a glass transition temperature (Tg) of 50 to 250 ° C., 0.5 to 12 parts by weight of a solvent, and 0 to 10 parts by weight of a coupling agent. .

The adhesive resin used here has a glass transition temperature (Tg) of 50 to 250 ° C., preferably 15 to 250 ° C.
Use the one of 0 to 230 ° C. Examples of such an adhesive resin include a heat-resistant thermoplastic resin or a heat-resistant adhesive resin containing the same as a main component. Examples of the heat-resistant thermoplastic resin include a polyimide resin and a polyamide resin.
Here, the polyimide resin includes a resin having an imide group such as polyamide imide, polyester imide, and polyether imide.

In the single-layer film adhesive of the present invention,
The amount of solvent present (or remaining) depends on the adhesive resin 10
0.5 to 12 parts by weight, preferably 1.0 to 0 parts by weight
To 10 parts by weight. If the amount of the solvent is less than 0.5 part by weight, the effect of bonding at a low temperature is small, and if it exceeds 12 parts by weight, foaming occurs at the time of bonding, which is not preferable. The type of the solvent is an organic solvent used for preparing an adhesive resin liquid (varnish),
There is no particular limitation as long as the adhesive resin can be uniformly dissolved. For example, dimethyl sulfoxide, N-methylpyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, tetrahydrofuran, dioxane,
Solvents such as monoglyme, diglyme, benzene, toluene, xylene, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, cellosolve acetate, butyl cellosolve acetate, cyclohexanone and butyl lactone are used. These may be a mixed solvent of two or more. The amount of the solvent in the single-layer film adhesive is,
Usually, the conditions for heating and drying during production of the single-layer film adhesive (described below) can be adjusted by appropriately selecting the conditions.

The production of a single-layer film adhesive is carried out as follows. First, the adhesive resin is dissolved with an organic solvent.
The organic solvent used is not particularly limited as long as it can uniformly dissolve the adhesive resin as described above. One or a mixture of two or more of the above-mentioned organic solvents can be used. To this, preferably, a coupling agent is added and mixed in an amount of 0 to 10 parts by weight based on 100 parts by weight of the adhesive resin. If the amount of the coupling agent exceeds 10 parts by weight, the wettability of the resulting film adhesive is poor, and the adhesive strength is also reduced.

As the coupling agent, silane coupling agents, that is, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxy Epoxy silanes such as silane, vinyltriethoxysilane, vinyltrimethoxysilane, vinylsilane such as γ-methacryloxymethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-phenyl-γ-aminopropyl In addition to aminosilanes such as trimethoxysilane, mercaptosilanes such as γ-mercaptopropyltrimethoxysilane, and the like, there are coupling agents such as titanates, aluminum chelates, and zircoaluminates, among which silane coupling agents are used. Good Epoxy silane coupling agents are particularly preferably used. If necessary, fillers such as rubber particles, resin particles, ceramic powder, glass powder, silver powder, and copper powder, and other additives may be added and mixed.

The obtained mixed liquid (or mixture) is uniformly applied on a flat plate such as a glass plate or a stainless steel plate, or on a film (or sheet) such as a polyester film (or sheet). The application method at this time is not particularly limited. For example, it can be applied by a method using a doctor blade, a knife coater, a die coater or the like. After the application, the mixture is heated and dried under such conditions that a predetermined amount of the solvent remains, and then cooled to room temperature, and then the film adhesive is peeled off from a flat plate or a film (or sheet) to obtain a single-layer film adhesive. . Here, the heating and drying conditions are as follows:
It depends on whether the adhesive resin varnish is a polyamic acid varnish or a polyimide varnish. When the adhesive resin varnish is a polyamic acid varnish, a temperature of Tg or more is required to imidize the resin. In the case of a polyimide varnish, any temperature may be used as long as the solvent can be evaporated and volatilized. The heating and drying times may be determined by experiments and the like.

As another manufacturing method, a film-like (or sheet-like) gas-permeable cloth such as glass cloth, carbon fiber cloth, or polyaramid cloth is impregnated with the mixture (or mixture), and the mixture is heated and dried. There are ways. The resulting tape is also called a composite adhesive tape, but in the present invention, it is used in the sense that it is included in a single-layer film adhesive.

[0013] The present invention also provides (c) at least one side of the film-like substrate,
Or a multi-layered (substrate is also counted as one) film-like adhesive in contact with any of the film-like adhesives of (b). Here, the substrate used is a heat-resistant film of engineering plastics such as polyimide, polyamide, polysulfone, polyphenylene sulfide, polyetheretherketone, and polyarylate, copper foil, aluminum foil, and metal foil such as stainless steel foil. .

The heat-resistant film is made of Tg of an adhesive resin.
Films with a higher Tg are used. The selection may be made according to the Tg of the adhesive resin to be used.
Those having a temperature of 0 ° C or higher, preferably 250 ° C or higher are used.
Further, it is more preferable that the heat-resistant film has a water absorption of 2% by weight or less and a coefficient of thermal expansion of 3 × 10 ⁻⁵ / ° C. or less. One of the heat-resistant films satisfying such characteristics is a polyimide film.

The heat-resistant film is preferably subjected to a surface treatment in order to increase the adhesiveness with the adhesive resin. As the surface treatment method, any treatment such as chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as sandblasting, plasma treatment, corona treatment and the like can be used. The most suitable treatment may be used according to the type of the adhesive resin, but a chemical treatment or a plasma treatment is particularly suitable.

The production of the multilayer film adhesive of the present invention can be carried out as follows. First, the adhesive resin is dissolved with an organic solvent. The organic solvent to be used is not particularly limited as long as it can uniformly dissolve the adhesive resin as in the production of the single-layer film adhesive. One or a mixture of two or more of the above-mentioned organic solvents can be used. Preferably, 0 to 10 parts by weight of a coupling agent is added to 100 parts by weight of the adhesive resin and mixed with the solution. As described above, when the addition amount of the coupling agent exceeds 10 parts by weight, the wettability of the obtained film adhesive is poor, and the adhesive strength is reduced as described above.

The coupling agents that can be used are the same as those mentioned above. If necessary, fillers such as rubber particles, resin particles, ceramic powder, glass powder, silver powder, and copper powder, and other additives are added and mixed. The resulting mixture (or mixture) is uniformly applied to one or both surfaces of a heat-resistant film such as the above-mentioned polyimide or a metal foil such as a copper foil. As described above, for example, the coating can be performed by a doctor blade, a knife coater, a die coater, or the like. It can also be performed by passing a base material (heat-resistant film or metal foil) through a varnish solution, but it is difficult to control the thickness of the adhesive resin. After application,
Heating and drying under the condition that a predetermined amount of the solvent remains, and then cooling to room temperature gives a multilayered film adhesive.
The heating and drying conditions are the same as those for the single-layer film adhesive. When the heat-resistant adhesive varnish is applied to both sides of the substrate, the heat-resistant adhesive applied to both sides may be the same or different.

The present invention further provides (d) a lead frame to which the single-layered film adhesive or the multilayered film adhesive is bonded, and (e) a lead frame and a semiconductor chip directly (A) a semiconductor device bonded with any one of the film adhesives of (c), and (f) a lead frame and a semiconductor chip as described in (1) above.
(1) to (3) through a die bonding material other than (3)
The present invention also relates to a semiconductor device bonded by any one of the film adhesives of (3). That is, using the single-layer film adhesive or the multilayer film adhesive of the present invention, a relatively low temperature capable of preventing oxidation of the copper surface, that is, 150 ° C.
The bonding operation between the lead frame and the semiconductor chip can be performed at a temperature of up to 300 ° C., so that a highly reliable semiconductor device can be manufactured. For example, one method is to punch the film adhesive of the present invention into a predetermined size, sandwich the obtained film piece between a lead frame and a semiconductor chip, and at 150 to 300 ° C. and 0.01 to 10 MPa,
The semiconductor device can be manufactured by pressure bonding for 0.1 to 10 seconds, then bonding the lead frame and the semiconductor chip with a gold wire or the like, and performing transfer molding and sealing with a molding material such as an epoxy resin ( (Fig. 1). Another method is to press-bond a film-shaped adhesive piece of the present invention punched into a predetermined size to a lead frame, and then place a semiconductor chip on the pressure-bonded piece, and then bond the lead frame and the semiconductor chip. The semiconductor device can be manufactured by bonding with a gold wire or the like and sealing with a molding material such as an epoxy resin (FIG. 2). In another method, a piece of the film adhesive of the present invention punched into a predetermined size is pressure-bonded to a lead frame, and then a die bond other than the film adhesive of the present invention is bonded to a predetermined portion of the film adhesive. A material (silver paste, die bond film, etc.) is placed, a semiconductor chip is placed on this, and pressure bonding is performed. Thereafter, the lead frame and the semiconductor chip are joined with a gold wire or the like, and sealed with a molding material such as an epoxy resin. A semiconductor device can also be manufactured (FIG. 3). FIG.
Shows a schematic cross-sectional view of a semiconductor package having a LOC structure,
FIG. 2 is a schematic cross-sectional view of a semiconductor package with a heat spreader in which the film adhesive of the present invention and the semiconductor chip are directly bonded, and FIG. 3 is a die bond material in which the film adhesive of the present invention and the semiconductor chip are bonded. 1 is a schematic cross-sectional view of a semiconductor package with a heat spreader, which is interposed.

[0019]

The present invention will be specifically described below with reference to examples. Example 1 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
1,12-diaminododecane / 1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/75 /
100 g of a polyamide imide resin having a Tg of 20/5 (molar ratio) having a Tg of 190 ° C. and 5 g of γ-glycidoxypropyltrimethoxysilane (hereinafter abbreviated as CPL) are mixed with N, N-
Dimethylformamide (hereinafter abbreviated as DMF) 300
g to prepare a varnish. This varnish was applied on both sides of the polyimide film (substrate) so that the thickness after drying was 25 μm, and one side was dried at 100 ° C. for 10 minutes, and then dried at 220 ° C. for 10 minutes to obtain three layers. A film adhesive (adhesive tape) was produced. The amount of the residual solvent in the adhesive layer of the adhesive tape was 0.8% by weight (0.81 part by weight based on 100 parts by weight of the polyamideimide resin). The amount of the solvent remaining in the adhesive layer of the adhesive tape was 300 ° C.
For 30 minutes, and the weight change before and after drying was measured, and the weight of the polyimide film (substrate) was corrected and calculated.

The adhesive tape is applied to a copper plate at 300 ° C. or 25 ° C.
When affixed under the conditions of 0 ° C., 3 MPa, and 3 s, and measured the 90 ° peel strength (peel), each was 1.0
kg / cm and 0.6 kg / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. Then, the LOC package shown in FIG. 1 was manufactured by molding with a sealing material. 85 ° C, relative humidity 85
% For 168 h and then at Max 245 ° C.
When reflow was performed in an R furnace, no crack was generated.

Example 2 A three-layer adhesive tape was prepared in the same manner as in Example 1 except that the drying conditions were changed to 175 ° C. for 10 minutes. The amount of the residual solvent in the adhesive layer of the adhesive tape was 5.9% by weight (6.3 parts by weight based on 100 parts by weight of the polyamideimide resin). This adhesive tape on a copper plate at 300 ° C or 250 ° C,
It was pasted under the conditions of 3 MPa and 3 s, and the 90 degree peeling strength (peel) was measured.
cm and 0.9 kg / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. 16 at 85 ° C and 85% relative humidity
After absorbing moisture for 8 hours, reflow was performed in an IR furnace at Max 245 ° C., and no crack was generated.

Example 3 A three-layer film adhesive (adhesive tape) was produced in the same manner as in Example 1 except that the drying conditions were changed to 150 ° C. for 10 minutes. The residual solvent amount in the adhesive layer of this adhesive tape was 9.
It was 1% by weight (10.0 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to the copper plate
At 90 ° C or 250 ° C, 3MPa and 3s were applied and the 90 degree peel strength (peel) was measured.
They were 1.6 kg / cm and 1.1 kg / cm, respectively. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. After absorbing moisture for 168 h at 85 ° C. and a relative humidity of 85%, Max24
When reflow was performed in a 5 ° C. IR furnace, no crack was generated.

Comparative Example 1 A three-layer film adhesive (adhesive tape) was produced in the same manner as in Example 1 except that the drying conditions were changed to 300 ° C. for 10 minutes. The residual solvent amount in the adhesive layer of the adhesive tape is 0.01% by weight or less (0.01% by weight or less based on 100% by weight of the polyamideimide resin).
Met. Apply this adhesive tape to a copper plate at 300 ° C or 250 ° C.
At 90 ° C., 3 MPa, 3 s, and the peel strength (peel) was measured.
g / cm and 0.2 kg / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. After absorbing moisture for 168 h under the conditions of 85 ° C. and 85% relative humidity, reflow was performed in an IR furnace at Max 245 ° C., and no crack was generated.

Comparative Example 2 A three-layer film adhesive (adhesive tape) was produced in the same manner as in Example 1 except that the drying conditions were changed to 100 ° C. for 10 minutes. The amount of the residual solvent in the adhesive layer of this adhesive tape was 15.3% by weight (18.1 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to a copper plate at 300 ° C or 250 ° C,
When an attempt was made to apply the film under the conditions of MPa and 3 s, foaming was extremely poor, and a good adhesive surface could not be obtained.

(Comparative Example 3) A three-layered film adhesive (adhesive tape) using an epoxy-based adhesive was attached to a copper lead frame at 200 ° C., and then a semiconductor chip was adhered to the copper lead frame. And post-cured. When wire bonding was performed using a gold wire, poor wire bonding occurred frequently because the inner lead was contaminated by outgas. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. After absorbing moisture for 168 h at 85 ° C. and a relative humidity of 85%, reflow was performed in an IR furnace at Max 245 ° C. Since peeling occurred between the lead frame and the sealing material,
Cracks occurred.

Example 4 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
Tg composed of 1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/95/5 (molar ratio) is 2
100g of polyamideimide resin and 3g of CPL at 25 ° C
Was dissolved in 300 g of N-methylpyrrolidone to prepare a varnish. This varnish is applied on both sides of the polyimide film (substrate) so that the thickness after drying is 25 μm.
After drying at 30 ° C. for 20 minutes, a three-layer film adhesive (adhesive tape) was prepared. The amount of the residual solvent in the adhesive layer of the adhesive tape was 1.2% by weight (polyamideimide resin 10%).
1.2 parts by weight with respect to 0 parts by weight). The adhesive tape was applied to a copper plate at 300 ° C. or 250 ° C. under the conditions of 3 MPa and 3 s, and the peeling strength (peel) was measured at 90 °.
g / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material.
After absorbing moisture for 168 h under the conditions of 85 ° C. and 85% relative humidity, reflow was performed in an IR furnace at Max 245 ° C., and no crack was generated.

Example 5 A three-layer film adhesive (adhesive tape) was produced in the same manner as in Example 4 except that the drying conditions were changed to 160 ° C. for 15 minutes. The amount of residual solvent in the adhesive layer of this adhesive tape was 5.
It was 0% by weight (5.3 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to a copper plate for 30
The film was attached at 0 ° C. or 250 ° C. under the conditions of 3 MPa and 3 s, and the peel strength (peel) measured at 90 ° was 1.2 kg / cm and 0.7 kg / cm, respectively. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. After absorbing moisture for 168 h at 85 ° C. and a relative humidity of 85%, Max24
When reflow was performed in a 5 ° C. IR furnace, no crack was generated.

Example 6 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
1,12-diaminododecane / 1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/75 /
A varnish was prepared by dissolving 100 g of a 20/5 (molar ratio) polyamideimide resin having a Tg of 190 ° C. and 5 g of CPL in 300 g of DMF. This varnish is applied to a polyester film (substrate) so that the thickness after drying is 40 μm, dried at 100 ° C. for 10 minutes, peeled off and fixed in a metal frame, and further dried at 180 ° C. for 10 minutes. Then, a single layer film adhesive (adhesive tape) was obtained. The residual solvent amount in the adhesive layer of this adhesive tape was 5.0% by weight (5.3 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to a copper plate at 300 ° C or 250 ° C,
When the sample was pasted under the conditions of 3 MPa and 3 s and the 90 degree peeling strength (peel) was measured, each was 1.2 kg / c.
m and 0.8 kg / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. 168 at 85 ° C and 85% relative humidity
After moisture absorption, reflow was performed in an IR furnace at Max 245 ° C., and no crack was generated.

Example 7 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
1,12-diaminododecane / 1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/75 /
A varnish was prepared by dissolving 100 g of a 20/5 (molar ratio) polyamideimide resin having a Tg of 190 ° C. and 5 g of CPL in 300 g of DMF. This varnish has a thickness of 105μ
m was coated on one surface of a double-sided roughened copper foil so that the thickness after drying was 20 μm, and dried at 160 ° C. for 10 minutes to prepare a copper foil with an adhesive (adhesive tape). The amount of the residual solvent in the adhesive layer of the adhesive tape was 6.5% by weight (7.0 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to copper plate at 300 ℃ or 250 ℃, 3MP
a, and 90 ° peel strength (peel) was measured under conditions of 3s and 3s, respectively, to be 1.5 kg / cm and 0.9 kg / cm, respectively. After attaching this adhesive tape to a copper lead frame, the semiconductor chip was adhered to the adhesive surface using a silver paste. There was no problem when wire bonding was performed using a gold wire. A semiconductor package with a heat spreader shown in FIG. 3 was fabricated by molding with a sealing material. After moisture absorption for 168 hours at 85 ° C. and a relative humidity of 85%, reflow was performed in an IR furnace at Max 245 ° C., and no crack was generated.

Example 8 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
1,12-diaminododecane / 1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/75 /
A varnish was prepared by dissolving 100 g of a 20/5 (molar ratio) polyamideimide resin having a Tg of 190 ° C., 5 g of CPL, and 40 g of silicone rubber filler in 300 g of DMF. This varnish was applied on both sides of a polyimide film (substrate) so that the thickness after drying was 25 μm.
After drying at 0 ° C. for 10 minutes, a three-layer film adhesive (adhesive tape) was prepared. The amount of the residual solvent in the adhesive layer of the adhesive tape was 4.8% by weight (5.0 parts by weight based on 100 parts by weight of the polyamideimide resin). This adhesive tape was attached to a copper plate at 300 ° C. or 250 ° C. under the conditions of 3 MPa and 3 s, and the peel strength (peel) was measured at 90 °.
cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. There was no problem when wire bonding was performed using a gold wire. The LOC package shown in FIG. 1 was fabricated by molding with a sealing material. 85
After 168 h of moisture absorption at 85 ° C. and a relative humidity of 85%, M
When reflow was performed in an IR furnace at ax of 245 ° C., no crack was generated.

Example 9 Trimellitic anhydride monochloride / 2,2-bis [4- (4-aminophenoxy) phenyl] propane /
1,3-bis (3-aminopropyl) tetramethylsiloxane = 100/70/30 (molar ratio), 100 g of a polyamideimide resin having a Tg of 180 ° C. and 65 g of a silicone rubber filler were dissolved in 300 g of N-methylpyrrolidone, A varnish was prepared. This varnish has a thickness of 105μ
m on both sides of the roughened copper foil (base material)
Coating was performed so that the thickness became 0 μm, and the coating was dried at 160 ° C. for 10 minutes to prepare a copper foil with an adhesive (adhesive tape). The amount of the residual solvent in the adhesive layer of the adhesive tape was 5.2% by weight (5.5 parts by weight based on 100 parts by weight of the polyamideimide resin). Apply this adhesive tape to a copper plate at 300 ° C or 250 ° C.
At 90 ° C., 3 MPa and 3 s, and measured the 90 ° peel strength (peel).
g / cm and 1.1 kg / cm. After attaching this adhesive tape to a copper lead frame, a semiconductor chip was attached. No warpage was observed when affixed to a copper lead frame. There was no problem when wire bonding was performed using a gold wire. The semiconductor package with a heat spreader shown in FIG. 2 was fabricated by molding with a sealing material. 85
After 168 h of moisture absorption at 85 ° C. and a relative humidity of 85%, M
When reflow was performed in an IR furnace at ax of 245 ° C., no crack was generated.

[0032]

The film adhesive of the present invention can be bonded at a low temperature. Therefore, it is particularly useful for an adhesive member of a semiconductor package using a copper frame. Further, a semiconductor device using the film adhesive of the present invention has high reliability.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor package having a LOC structure.

FIG. 2 is a schematic cross-sectional view of a semiconductor package with a heat spreader.

FIG. 3 is a schematic cross-sectional view of a semiconductor package with a heat spreader in which a semiconductor chip and a lead frame are bonded via a die bond material.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Film adhesive 1a ... Adhesive layer 1b ... Heat spreader 2 ... Semiconductor chip 3 ... Lead frame 4 ... Wire 5 ... Sealing material 6 ... Die bonding material

Claims (6)

[Claims] 1. A film adhesive comprising an adhesive resin having a glass transition temperature (Tg) of 50 to 250 ° C. and an adhesive layer containing 0.5 to 12 parts by weight of a solvent with respect to 100 parts by weight of the adhesive resin. 2. A film comprising an adhesive layer containing 100 parts by weight of an adhesive resin having a glass transition temperature (Tg) of 50 to 250 ° C., 0.5 to 12 parts by weight of a solvent, and 0 to 10 parts by weight of a coupling agent. adhesive. 3. A multilayer film adhesive comprising the film substrate according to claim 1 and at least one surface of the film substrate. 4. A lead frame to which the film adhesive according to claim 1 is adhered. 5. A semiconductor device in which a lead frame and a semiconductor chip are directly adhered with the film adhesive according to claim 1. 6. A semiconductor device wherein a lead frame and a semiconductor chip are bonded with a film adhesive according to any one of claims 1 to 3 via a die bonding material other than the above.