JPH1050521A - Magneto-optical film and manufacturing method thereof - Google Patents
Magneto-optical film and manufacturing method thereofInfo
- Publication number
- JPH1050521A JPH1050521A JP22314296A JP22314296A JPH1050521A JP H1050521 A JPH1050521 A JP H1050521A JP 22314296 A JP22314296 A JP 22314296A JP 22314296 A JP22314296 A JP 22314296A JP H1050521 A JPH1050521 A JP H1050521A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical
- optical film
- composition
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/186—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering for applying a magnetic garnet film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
(57)【要約】
【課題】 損失が少なく、ファラデー効果の大きい磁気
光学膜をうること。
【解決手段】 Gd3 (Sct Ga5-t )O12(t≦
2)の組成を有する基板上に、CeX Y3-x Fe5+y O
12+z(x≦3,−0.5≦y,z≦0.5)の組成をほ
ぼ有する磁気光学膜を形成することを特徴とする磁気光
学膜。(57) [Problem] To provide a magneto-optical film having a small loss and a large Faraday effect. A Gd 3 (Sc t Ga 5- t) O 12 (t ≦
On a substrate having the composition 2), Ce X Y 3- x Fe 5 + y O
A magneto-optical film characterized by forming a magneto-optical film substantially having a composition of 12 + z (x ≦ 3, −0.5 ≦ y, z ≦ 0.5).
Description
【0001】[0001]
【発明の属する技術分野】本発明は光通信、光計測、光
制御、メモリー等に用いる磁気光学材料に関し、特に、
損失が少なくファラデー効果の大きな磁気光学膜および
その製造法に関するものである。The present invention relates to a magneto-optical material used for optical communication, optical measurement, optical control, memory, etc.
The present invention relates to a magneto-optical film having a small loss and a large Faraday effect, and a method for manufacturing the same.
【0002】[0002]
【従来の技術】光アイソレータ、光サーキュレータ等の
光非相反回路の構成には、磁気光学効果の一種である光
のファラデー回転が利用されている。磁気光学材料とし
て、従来、YIG(Y3 Fe5 O12)やYの一部をBi
で置き換えたBi置換YIGの結晶が用いられてきた。
回路の小型化・高性能化のためには、ファラデー回転角
が大きく、伝搬損失が小さい磁気光学材料が必要であ
る。また、最近では、光回路の集積化を目標として磁気
光学材料膜の導波路化の要望が高まってきた。特に光集
積回路に用いる磁気光学材料は大きなファラデー回転角
だけでなく伝搬損失が低いことが重要である。2. Description of the Related Art An optical non-reciprocal circuit such as an optical isolator or an optical circulator uses Faraday rotation of light, which is a kind of magneto-optical effect. Conventionally, as a magneto-optical material, YIG (Y 3 Fe 5 O 12 ) or a part of Y
Bi-substituted YIG crystals replaced by Y have been used.
To reduce the size and increase the performance of the circuit, a magneto-optical material having a large Faraday rotation angle and a small propagation loss is required. Recently, there has been an increasing demand for a waveguide made of a magneto-optical material film for the purpose of integrating an optical circuit. In particular, it is important that the magneto-optical material used in the optical integrated circuit has a low propagation loss as well as a large Faraday rotation angle.
【0003】ファラデー回転角の大きな材料として、現
在、Yの一部をCeで置き換えたCe置換YIG(化学
式CeX Y3-x Fe5 O12)の磁気光学膜の開発が進め
られている。基板としては、膜よりも格子定数の小さな
GGG(Gd3 Ga5 O12)基板(格子定数12.38
3Å)、SGGG(〔Gd,Ca,Mg〕3 〔Ga,Z
r〕3 O12)基板(格子定数12.495Å)、NGG
(Nd3 Ga5 O12)基板(格子定数12.509Å)
が用いられていた。(文献:宇野、新宅、“Ce:YI
G薄膜磁気光学特性の基板依存性”、第39回応用物理
学関係連合講演会予稿集、28a−H−8,P51(1
992)) しかしながら、これまでのCe置換YIG膜はファラデ
ー回転角が大きいものの伝搬損失が13−18dB/c
mと高い欠点があった。そのため伝搬損失の低減が望ま
れいた。As a material having a large Faraday rotation angle, a magneto-optical film of Ce-substituted YIG (Ce X Y 3-x Fe 5 O 12 ) in which part of Y is replaced by Ce is currently being developed. As a substrate, a GGG (Gd 3 Ga 5 O 12 ) substrate having a lattice constant smaller than that of the film (a lattice constant of 12.38)
3Å), SGGG ([Gd, Ca, Mg] 3 [Ga, Z
r] 3 O 12 ) substrate (lattice constant 12.495 °), NGG
(Nd 3 Ga 5 O 12 ) substrate (lattice constant 12.509 °)
Was used. (Literature: Uno, Shintaku, "Ce: YI
Substrate Dependence of G Thin Film Magneto-Optical Properties ", Proceedings of the 39th Joint Lecture Meeting on Applied Physics, 28a-H-8, P51 (1
However, although the conventional Ce-substituted YIG film has a large Faraday rotation angle, the propagation loss is 13-18 dB / c.
m and a high defect. Therefore, reduction of propagation loss has been desired.
【0004】[0004]
【発明が解決しようとする課題】本発明は上記の欠点を
改善するために提案されたもので、その目的は、損失が
少なくファラデー効果の大きな磁気光学膜を提供するこ
とにある。SUMMARY OF THE INVENTION The present invention has been proposed to improve the above-mentioned disadvantages, and an object of the present invention is to provide a magneto-optical film having a small loss and a large Faraday effect.
【0005】[0005]
【課題を解決するための手段】上記の目的を達成するた
め本発明はGd3 (Sct Ga5-t )O12(t≦2)の
組成を有する基板上に、CeX Y3-x Fe5+y O
12+z(x≦3,−0.5≦y,z≦0.5)の組成をほ
ぼ有する磁気光学膜を形成することを特徴とする磁気光
学膜を発明の特徴とする。なお本発明は、従来の技術と
は、材料構成が異なるものである。To achieve the above object, according to an aspect of the present invention on a substrate having a composition of Gd 3 (Sc t Ga 5- t) O 12 (t ≦ 2), Ce X Y 3-x Fe 5 + y O
A magneto-optical film characterized by forming a magneto-optical film substantially having a composition of 12 + z (x ≦ 3, −0.5 ≦ y, z ≦ 0.5) is a feature of the present invention. The present invention is different from the prior art in the material composition.
【0006】[0006]
【発明の実施の形態】本発明は、Gd3 (Sct Ga
5-t )O12(t≦2)の組成を有する基板上に、CeX
Y3-x Fe5+y O12+z(x≦3,−0.5≦y,z≦
0.5)の組成を有する磁気光学膜を形成することを特
徴とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates, Gd 3 (Sc t Ga
5-t ) Ce X on a substrate having a composition of O 12 (t ≦ 2)
Y 3-x Fe 5 + y O 12 + z (x ≦ 3, −0.5 ≦ y, z ≦
0.5) forming a magneto-optical film having the composition described above.
【0007】[0007]
【実施例】次に本発明の実施例について説明する。なお
実施例は一つの例示であって、本発明の精神を逸脱しな
い範囲で、種々の変更あるいは改良を行いうることは云
うまでもない。本実施例では、高周波スパッタリングを
用いてGd3 (Sct Ga5-t )O12(t≦2)の組成
を有する結晶基板上に、CeX Y3-x Fe5+y O
12+z(x≦3,−0.5≦y,z≦0.5)の組成を有
するCe置換YIG磁気光学結晶膜を形成した。ターゲ
ットにはCeO2 ,Y2 O3 ,Fe2 O3 の粉末を所望
の組成となるよう混合し、焼結した。その際、酸素量が
多くなるが、スパッタ時に酸素抜けが起きるためそのと
きに調整可能である。スパッタガスとしては、酸素抜け
を防ぐため、わずかに酸素を含むアルゴンガスを用いた
(純アルゴンガスを用いても形成可能である)。基板温
度は500℃以上とした。スパッタ後、窒素中(不活性
ガスまたは真空中)で膜に750〜850℃、30〜9
0分のアニールを施した。Next, an embodiment of the present invention will be described. The embodiment is merely an example, and it goes without saying that various changes or improvements can be made without departing from the spirit of the present invention. In this embodiment, the crystal substrate having a composition of Gd 3 (Sc t Ga 5- t) O 12 (t ≦ 2) by high-frequency sputtering, Ce X Y 3-x Fe 5 + y O
A Ce-substituted YIG magneto-optical crystal film having a composition of 12 + z (x ≦ 3, −0.5 ≦ y, z ≦ 0.5) was formed. For the target, powders of CeO 2 , Y 2 O 3 , and Fe 2 O 3 were mixed to have a desired composition and sintered. At this time, although the amount of oxygen increases, oxygen can be released at the time of sputtering, so that it can be adjusted at that time. As a sputtering gas, an argon gas containing a small amount of oxygen was used in order to prevent oxygen escape (a pure argon gas can also be used). The substrate temperature was 500 ° C. or higher. After sputtering, the film is formed at 750 to 850 ° C. in nitrogen (inert gas or vacuum) at 30 to 9
A 0 minute annealing was performed.
【0008】前記結晶基板の化学組成Gd3 (Sct G
a5-t )O12(t≦2)において、tは結晶学的に2を
超えない、さらに前記Ce置換YIG膜の化学組成Ce
X Y3-x Fe5+y O12+z(x≦3,−0.5≦y,z≦
0.5)において、xはCeのイットリウムに対する置
換量なので3を超えることはない。また、結晶学的に鉄
元素(Fe)は5、酸素元素(O)は12、つまりy=
0、z=0であることが望ましいが、製造された膜のy
およびzは±0.5程度の誤差が起こり得る。[0008] The chemical composition Gd 3 of the crystalline substrate (Sc t G
a 5-t ) O 12 (t ≦ 2), t does not exceed 2 crystallographically, and the chemical composition Ce of the Ce-substituted YIG film is Ce
X Y 3-x Fe 5 + y O 12 + z (x ≦ 3, −0.5 ≦ y, z ≦
In 0.5), x does not exceed 3 because the substitution amount for yttrium C e. Further, crystallographically, iron element (Fe) is 5 and oxygen element (O) is 12, that is, y =
0, z = 0 is desirable, but y of the manufactured film is
And z may have an error of about ± 0.5.
【0009】次に本発明により製造されたCe置換YI
G磁気光学膜の特性について述べる。図1はGd2 Sc
2 Ga3 O12の組成を持つ結晶基板(a=〜12.56
5Å)の(111)面上にCeY2 Fe5 O12の組成を
もつ結晶膜の光波長1.55μmにおける伝搬特性の例
である。プリズムカプリング法により膜面方向に光を導
波させ、伝搬距離に対する光の減衰量を測定した。直線
の傾きから伝搬損失はTEmodeで9.7dB/cm、T
Mmodeで5.8dB/cmとなり、従来(13〜18d
B/cm)より4割以上の低減が図れている。また、フ
ァラデー回転角も約3200deg/cmと大きな値を
示した。Next, the Ce-substituted YI prepared according to the present invention is used.
The characteristics of the G magneto-optical film will be described. FIG. 1 shows Gd 2 Sc
Crystal substrate having a composition of 2 Ga 3 O 12 (a == 12.56
5}) is an example of the propagation characteristics of a crystal film having a composition of CeY 2 Fe 5 O 12 on the (111) plane at an optical wavelength of 1.55 μm. Light was guided in the direction of the film surface by the prism coupling method, and the amount of light attenuation with respect to the propagation distance was measured. From the slope of the straight line, the propagation loss is 9.7 dB / cm in TEmode and T
5.8dB / cm in Mmode
(B / cm). The Faraday rotation angle also showed a large value of about 3200 deg / cm.
【0010】[0010]
【発明の効果】以上説明したように、本発明はGd
3 (Sct Ga5-t )O12(t≦2)の組成を有する基
板上に、CeX Y3-x Fe5+y O12+z(x≦3,−0.
5≦y,z≦0.5)の組成を有する磁気光学膜を形成
することにより、損失が低くファラデー効果の大きな磁
気光学膜が得られる効果を有する。As described above, the present invention provides a Gd
3 (Sc t Ga 5-t ) to O 12 on a substrate having a (t ≦ 2) composition, Ce X Y 3-x Fe 5 + y O 12 + z (x ≦ 3, -0.
Forming a magneto-optical film having a composition of (5 ≦ y, z ≦ 0.5) has an effect of obtaining a magneto-optical film having low loss and a large Faraday effect.
【図1】本発明の特徴を最も良く表わしている実施例の
伝搬損失特性の図を示す。FIG. 1 shows a diagram of propagation loss characteristics of an embodiment that best illustrates the features of the present invention.
Claims (2)
2)の組成を有する基板上に、CeX Y3-x Fe5+y O
12+z(x≦3,−0.5≦y,z≦0.5)の組成をほ
ぼ有する磁気光学膜を形成することを特徴とする磁気光
学膜。1. A Gd 3 (Sc t Ga 5- t) O 12 (t ≦
On a substrate having the composition 2), Ce X Y 3- x Fe 5 + y O
A magneto-optical film characterized by forming a magneto-optical film substantially having a composition of 12 + z (x ≦ 3, −0.5 ≦ y, z ≦ 0.5).
特徴とする請求項1記載の磁気光学膜の製造法。2. The method according to claim 1, wherein the film is formed by sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22314296A JPH1050521A (en) | 1996-08-05 | 1996-08-05 | Magneto-optical film and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22314296A JPH1050521A (en) | 1996-08-05 | 1996-08-05 | Magneto-optical film and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1050521A true JPH1050521A (en) | 1998-02-20 |
Family
ID=16793454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22314296A Pending JPH1050521A (en) | 1996-08-05 | 1996-08-05 | Magneto-optical film and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1050521A (en) |
-
1996
- 1996-08-05 JP JP22314296A patent/JPH1050521A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040203 |