JPH1056054A - Substrate mounting table with heater, film forming apparatus and etching apparatus - Google Patents

Abstract

(57) Abstract: A heater-equipped substrate mounting table used in a film forming apparatus, a dry etching apparatus, or the like that performs a process while heating a substrate held on the substrate mounting table is uniform and has good reproducibility. The substrate is heated. A plurality of projections (32) dispersed on a substrate mounting surface.
a, a heating means 24 embedded in the substrate mounting table 21 for heating the substrate 50 mounted on the substrate mounting surface, and a substrate mounting table passing through the inside of the substrate mounting table 21. A heating gas passage 29 for heating the back surface of the substrate 21 is provided, which is connected to the gas discharge port 33 on the surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate mounting table with a heater, a film forming apparatus, and an etching apparatus. More specifically, the present invention relates to a film forming apparatus and a dry etching apparatus for performing a process while heating a substrate held on the substrate mounting table. The present invention relates to a substrate mounting table with a heater used for an apparatus and the like, and a film forming apparatus and an etching apparatus having the same.

[0002]

2. Description of the Related Art It is known that, when a film is formed on a wafer by using a sputtering apparatus or the like, the characteristics and etching rate of the deposited thin film remarkably depend on the substrate temperature during film formation and etching. Therefore, in order to make the deposited thin film uniform in the substrate or to uniformly etch the object to be etched in the substrate, it is required to uniformly heat the substrate. In order to form a film with good reproducibility between substrates,
It is necessary that the temperature can be raised to the set temperature with good reproducibility.

FIGS. 4 (a) and 4 (b) show the structure of a conventional substrate mounting table with a heater for mounting a wafer to be processed and heating it to a set temperature, which is used in a sputtering apparatus. FIG. 4A is a cross-sectional view showing the overall configuration, and FIG. 4B is a cross-sectional view showing a partial configuration. As shown in FIG. 4A, a substrate mounting table 1 with a heater is installed in a vacuum processing chamber, and a heater 4 serving as a heat source and a temperature detecting element (thermocouple) for monitoring the temperature of the substrate 11 in the substrate mounting table 1. 6) is embedded. The substrate mounting table 1 has a heating gas (eg, argon).
Is formed on the substrate mounting surface, and the communication channel 9 has a gas discharge port 13 opened on the substrate mounting surface and a gas inlet port opened on a lower portion of the substrate mounting table 1. 14 is connected. Then, as shown in FIG.
The heating gas released from the substrate 3 to the substrate mounting surface flows through the gap 12 between the substrate 11 and the substrate mounting surface, and efficiently transfers heat from the heater 4 to the substrate 11.

[0004] Further, a heater heating control means 8 connected to the temperature detecting element 6 and the heater is provided, and the temperature of the substrate 11 detected by the temperature detecting element 6 is taken into the heater heating controlling means 8 so that the substrate 11 is controlled to a predetermined temperature. Heater 4 to reach temperature
Adjust the power to be applied to. Thereby, the substrate 11
Even heating in the inside is performed. Further, the substrate 11 on the substrate mounting table 1 is fixed by the clamp 2. This is to prevent the substrate 11 from deviating from the fixed position by the introduction of the heating gas.

[0005]

However, in the above-described substrate mounting table 1 with a heater, the substrate is efficiently heated by flowing a heating gas between the back surface of the substrate 11 and the substrate mounting surface. However, the gas movement during this period is not performed uniformly on the entire substrate 11, and as a result, the substrate heating is not uniform.

Incidentally, the flow rate of the heating gas moving in the gap 12 between the back surface of the substrate 11 and the substrate mounting surface depends on the weight of the clamp 2 and the pressing position of the substrate 11. Therefore, it is difficult to move the gas uniformly over the entire substrate 11 and to move the gas with good reproducibility every time the substrate 11 is mounted. In order to make the gas transfer more uniform, attempts have been made to provide radial or spiral grooves on the substrate mounting surface. However, the efficiency of heat exchange with the substrate 11 in the grooves and portions other than the grooves is also increased. A difference occurs, and the temperature distribution becomes uneven at each position of the substrate 11.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the related art, and has a substrate mounting table with a heater capable of performing uniform and reproducible substrate heating, and a device equipped with the same. A film forming apparatus and an etching apparatus are provided.

[0008]

According to a first aspect of the present invention, there is provided a substrate mounting table having a large number of projections dispersed on a substrate mounting surface, and embedded in the substrate mounting table. Heating means for heating the substrate mounted on the substrate mounting surface, and a gas discharge port of the substrate mounting surface through the inside of the substrate mounting table, heating gas for heating the back surface of the substrate A second aspect of the present invention is a substrate mounting table with a heater having a passage, the temperature detecting means being embedded in the substrate mounting table and detecting a temperature of the substrate, and the heating means. A power supply means for supplying power to the heating means, and a heating control means for adjusting power supply from the means for supplying power to the heating means based on the temperature detected by the temperature detection means. Substrate mounting with heater according to the invention The third aspect of the present invention is directed to a substrate mounting table with a heater according to the first or second aspect, wherein the substrate mounting surface has a plurality of the gas discharge ports. 4. The substrate with a heater according to any one of the first to third inventions, wherein a groove connected to a gas discharge port of the substrate mounting surface is formed in the substrate mounting surface. The first invention, which is solved by the mounting table and is solved by the film forming apparatus provided with the substrate mounting table with a heater according to any one of the first to fourth inventions, which is the fifth invention, is the sixth invention. According to a fourth aspect of the present invention, there is provided an etching apparatus including a substrate mounting table with a heater.

In the substrate mounting table with a heater according to the present invention, minute projections and depressions between the projections are formed on the entire surface of the substrate mounting surface of the substrate mounting table. Therefore, when the substrate is mounted on the substrate mounting surface, the heating gas released from the gas discharge ports of the substrate mounting surface flows freely in the concave portions between the convex portions. Since the concave portions are formed at a uniform density by the GBB method or the like, the heating gas is evenly distributed over the entire substrate. Thereby, uniform substrate heating can be performed.

In addition, since the substrate is supported by the projection,
The concave portions between the convex portions do not change every time the substrate is mounted, and the reproducibility of substrate heating for each substrate is good. Further, by providing a radial groove, a concentric groove, or a lattice-like groove connected to the gas discharge port, the heating gas can quickly spread to the peripheral portion of the substrate mounting surface via the groove. A heating gas can flow from the groove to the entire back surface of the substrate through the recess. Therefore, the uniformity of the heating is further increased.

Further, by providing two or more gas discharge ports, the heating gas can be directly discharged from the plurality of gas discharge ports to the substrate mounting surface. Can be spread. Also,
The substrate mounting table with the heater is mounted on a sputtering device or a CV
By providing a film forming apparatus such as a D apparatus or a dry etching apparatus for performing film forming or etching under normal pressure or reduced pressure, a film is formed on a substrate, and when the film on the substrate is etched, the substrate is etched. Since a uniform temperature can be maintained, a uniform film can be formed or uniform etching can be performed.

[0012]

Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIGS. 1A to 1C are cross-sectional views showing a substrate mounting table with a heater according to a first embodiment of the present invention.

As shown in FIG. 1A, a substrate mounting table 101 with a heater is installed in a vacuum processing chamber. FIG. 2 shows a part of the partition wall 23 of the chamber. The substrate mounting table 21 is made of aluminum. A heater 24 as a heat source and a temperature detecting element (thermocouple) 26 for monitoring the temperature of the substrate 50 are embedded in the substrate mounting table 21.

A flow path 29 for guiding a heating gas (inert gas such as argon) to the substrate mounting surface is formed at the center of the substrate mounting table 21, and the flow path 29 is formed on the substrate mounting surface. A gas discharge port 33 opened at the bottom of the substrate mounting table 21 is connected to a gas discharge port 33 opened at the bottom. Then, as shown in FIG. 1B, the heating gas released from the gas discharge port 33 to the substrate mounting surface flows through the gap 32 between the substrate 50 and the substrate mounting surface, and To the substrate 50 efficiently.

Further, a heater heating control means 28 connected to the temperature detecting element 26 and the heater 24 is provided, and the temperature of the substrate 50 is taken into the heater heating controlling means 28 from the temperature detecting element 26 to bring the substrate 50 to a predetermined temperature. Heater 2
Adjust the power applied to 4 appropriately. Thereby, the substrate 5
Even heating within 0 is performed. Also, the substrate mounting table 21
The upper substrate 50 is fixed by the clamp 22. This is to prevent the substrate 50 from coming out of the fixed position by the introduction of the heating gas.

Further, minute projections 3 are formed on the entire surface of the substrate mounting surface.
A concave portion 32b is formed between 2a and the convex portion 32a. When the substrate 50 is mounted on the substrate mounting surface, the flow path 29
The heating gas released from the concave portion 32 between the convex portions 32a
It flows freely in all directions in b. Since the concave portions 32b are formed with a uniform density by a GBB method (glass bead blast method) or the like, the heating gas is evenly distributed over the entire substrate 50. Further, since the substrate 50 is supported by the convex portions 32a, the concave portions 32b between the convex portions 32a do not change every time the substrate 50 is mounted, and the reproducibility of substrate heating for each substrate 50 is good.

Next, the convex portion 32a and the concave portion 3 on the substrate mounting surface
The method for forming 2b will be described. The case where the GBB method (glass bead blast method) is used will be described. First, glass beads having a particle size of about 80 μm are prepared. Next, a polishing liquid in which glass beads are mixed with a chemical solution is applied to the polishing surface of the polishing apparatus, and a substrate mounting table is mounted thereon with the substrate mounting surface facing the polishing surface. When the polishing surface and the substrate mounting table are rotated in the same direction, the substrate mounting surface is polished by the glass beads sandwiched between the substrate mounting surface and the polishing surface. On the substrate mounting surface, protrusions 32a having a diameter of about 80 μm are formed in an island shape and are dispersed, and recesses 3 are formed between the protrusions 32a.
2b is formed.

As described above, in the first embodiment, the minute recess 3 is formed on the entire surface of the substrate mounting surface of the substrate mounting table 21.
2b and the projection 32a are formed. Therefore, the substrate 5
When 0 is mounted on the substrate mounting surface, the heating gas released from the gas discharge ports 33 on the substrate mounting surface flows freely in the concave portions 32b between the convex portions 32a. Since the concave portions 32b are formed with a uniform density by the GBB method or the like, the heating gas is evenly distributed over the entire substrate 50. Thereby, uniform substrate heating can be performed.

Further, since the substrate 50 is supported by the convex portions 32a, the concave portions 32b between the convex portions 32a do not change every time the substrate 50 is mounted, and the reproducibility of substrate heating for each substrate is good. (Second Embodiment) FIG. 2A is a top view showing a substrate mounting table with heater 101a according to a second embodiment.

The substrate mounting table 101a with a heater according to the second embodiment is provided on the substrate mounting surface of the substrate mounting table 21a shown in FIG. That is, the groove 41a is provided. Radial groove 4
1a is connected to the gas outlet 33, and the gas outlet 3
The heating gas released from 3 flows along the radial grooves 41a, and freely flows in the concave portions 32b between the convex portions 32a.

In the drawing, the same reference numerals as in FIGS. 1 (a) to 1 (c) indicate the same as those in FIGS. 1 (a) to 1 (c). (Third Embodiment) FIG. 2B is a top view showing a substrate mounting table with heater 101b according to a third embodiment.

2A, a plurality of concentric grooves 41b centered on the gas discharge port 33 of the heating gas are provided in the radial grooves 41a of FIG. The concentric groove 41b is connected to the radial groove 41a at the intersection with the radial groove 41a, and the heating gas discharged from the gas discharge port 33 flows along the radial groove 41a and the concentric groove 41b, It flows freely in the recess 32b between the projections 32a.

In the drawing, the same reference numerals as in FIG. 2A indicate the same as those in FIG. 2A. (Fourth Embodiment) FIG. 2C is a top view showing a substrate mounting table with heater 101c according to a fourth embodiment. The difference from FIGS. 2A and 2B is that instead of radial grooves and concentric grooves, lattice grooves 41c are used.
That is, The lattice-shaped grooves 41c are connected to each other where they intersect. The lattice-shaped groove 41c is also connected to the gas discharge port 33 of the heating gas, and the heating gas released from the gas discharge port 33 is supplied to the lattice-shaped groove 41c.
c, and flows freely in the recess 32b between the projections 32a.

Incidentally, in the figure, the components denoted by the same reference numerals as those in FIG. 2 (a) indicate the same components as those in FIG. 2 (a). As described above, in the above second to fourth embodiments, the gas outlet 33
Is provided with a radial groove 41a, a concentric groove 41b, or a lattice-shaped groove 41c connected to the gas discharge port 33, so that the heating gas can be quickly placed on the substrate through the grooves 41a, 41b, 41c. The heating gas can be distributed evenly to the peripheral portion of the surface, and the heating gas can be uniformly flowed to the entire back surface of the substrate through the concave portion. Therefore, the uniformity of substrate heating is further improved.

Further, the substrate mounting tables 101, 101a to 101c with heaters according to the first to fourth embodiments are formed at normal pressure or reduced pressure by a film forming apparatus such as a sputtering apparatus or a CVD apparatus or a dry etching apparatus. It can be provided in a device for performing film or etching. Accordingly, when a film is formed on the substrate and the film on the substrate is etched, the substrate can be maintained at a uniform temperature, so that a uniform film can be formed or uniform etching can be performed.

The above-mentioned substrate mounting tables 101, 101a
In FIG. 3, there is one gas outlet 33, but as shown in FIG. 3, the gas passage 29 passing through the inside of the substrate mounting tables 101, 101a to 101c is branched to form a branch passage 29.
a to 29c, which are connected to the branch passages 29a to 29c.
One or more gas outlets 33a to 33c may be formed. Thus, the heating gas can be directly discharged from the plurality of gas discharge ports 33a to 33c to the substrate mounting surface, so that the heating gas can be more evenly spread over the entire surface of the wafer.

In the above description, the heating gas is not particularly heated. However, the heating gas may be heated to the substrate heating temperature in advance before the heating gas is supplied to the substrate mounting table by providing heating means for the heating gas. Good. Further, the four substrates 50 are fixed by the clamps 22, but may be fixed by an electrostatic chuck, a vacuum chuck, or the like.

Further, other inert gas than argon may be used as the heating gas.

[0029]

As described above, in the substrate mounting table with a heater according to the present invention, minute projections and depressions between the projections are formed on the entire surface of the substrate mounting surface of the substrate mounting table. I have. Therefore, when the substrate is placed on the substrate mounting surface, the heating gas released from the gas discharge port of the substrate mounting surface can be spread evenly over the entire substrate through the recess, so that uniform substrate heating is performed. be able to.

Since the substrate is supported by the projection,
The concave portions between the convex portions do not change every time the substrate is mounted, and the reproducibility of substrate heating for each substrate is good. Further, by providing grooves connected to the gas discharge ports, the heating gas can be quickly spread to the peripheral portion of the substrate mounting surface via those grooves, and further, the gas can be flowed to the entire back surface of the substrate through the concave portion. The uniformity of the heating will be further increased.

Further, by mounting the above-described substrate mounting table with a heater on a film forming apparatus such as a sputtering apparatus or a CVD apparatus, a dry etching apparatus or the like which performs film formation or etching under normal pressure or reduced pressure, the substrate mounting table can be mounted on the substrate. When the film is formed on the substrate and the film on the substrate is etched, the substrate can be kept at a uniform temperature, so that a uniform film can be formed or uniform etching can be performed.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view showing a substrate mounting table with a heater according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view of the substrate mounting table with a heater shown in FIG. FIG. 1C is a cross-sectional view showing details of the vicinity of the substrate mounting surface of the mounting table, and FIG.
FIG. 4 is a top view showing a projection formed on the substrate mounting surface.

FIG. 2A is a top view and a perspective view showing a substrate mounting surface of a heater-equipped substrate mounting table according to a second embodiment of the present invention, and FIG. FIG. 2C is a top view showing a substrate mounting surface of a substrate mounting table with a heater according to a third embodiment of the present invention, and FIG. 2C is a substrate mounting table with a heater according to a fourth embodiment of the present invention. FIG. 4 is a top view showing the substrate mounting surface of FIG.

FIG. 3 is a cross-sectional view illustrating a substrate mounting table with a heater according to another embodiment of the present invention.

FIG. 4A is a cross-sectional view showing a substrate mounting table with a heater according to a conventional example, and FIG.
FIG. 4A is a cross-sectional view illustrating details of the vicinity of a substrate mounting surface of the substrate mounting table with a heater in FIG.

[Explanation of symbols]

21, 21a Substrate mounting table, 22 clamp, 23 chamber partition wall, 24 heater, 25, 27 wiring, 26 thermocouple (temperature detecting means), 28 heater heating control means, 29 communication channel, 30 gas pipe, 31 flow rate Control means, 32 gaps, 32a convex portions, 32b concave portions, 33 gas discharge ports, 34 gas inlet ports, 41a, 41b, 41c grooves, 101, 101a, 101b, 101c A substrate mounting table with a heater.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical display location H01L 21/3065 H01L 21/302 B

Claims (6)

[Claims] 1. A substrate mounting table having a number of projections dispersed on a substrate mounting surface, and heating for heating a substrate mounted on the substrate mounting surface embedded in the substrate mounting table. Means, and a heating gas passage for heating the back surface of the substrate, which is connected to a gas outlet of the substrate mounting surface through the inside of the substrate mounting table. 2. A temperature detecting unit embedded in the substrate mounting table for detecting a temperature of the substrate, a unit for supplying power to the heating unit, and a temperature detected by the temperature detecting unit. 2. The substrate mounting table with a heater according to claim 1, further comprising: a heating control unit configured to adjust power supplied from the power supply unit to the heating unit. 3. 3. The substrate mounting table with a heater according to claim 1, wherein the substrate mounting surface has a plurality of gas outlets. 4. The substrate mounting device with a heater according to claim 1, wherein a groove connected to a gas discharge port of the substrate mounting surface is formed in the substrate mounting surface. Table. 5. A film forming apparatus comprising the substrate mounting table with a heater according to claim 1. 6. An etching apparatus comprising the substrate mounting table with a heater according to claim 1. Description: