JPH1064954A - Semiconductor device manufacturing method and manufacturing apparatus - Google Patents

Abstract

(57) [Problem] To provide a method and an apparatus for manufacturing a semiconductor device, which improve the bondability between a bump contact and an electrode. A film carrier (4) has bump contacts (5), and bump contacts (5) of the film carrier (4) and electrodes (not shown) of a semiconductor chip (3) are overlapped so as to be in contact with each other. Base 1
And a film carrier side base 2 provided with a projection 2a at a position corresponding to the back surface of the bump contact of the film carrier.
Then, the bump contact and the electrode are joined by heating and pressing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a method of mounting a semiconductor chip by connecting electrodes of a semiconductor chip and internal terminals of leads, a mounting method of connecting lead frames by wire bonding is the most common and well-known method. I have. However, the pitch between the electrodes becomes narrower as the semiconductor wiring becomes finer, and it is difficult to cope with the above mounting method. For this reason, a mounting method using a printed circuit board capable of finer processing has been devised instead of the lead frame. Mounting methods using such a printed board are classified into several types according to the board material, manufacturing method, form, and the like of the printed board. Among these, the mounting method using a film carrier as a printed circuit board is excellent in terms of continuous substrate productivity and fine pattern workability.

[0003] As one of mounting methods using a film carrier, a TAB method is known. In this method, the film carrier has a device hole in a chip mounting portion, and a beam lead is provided in the hole so as to protrude. In the TAB method, a bump contact is provided at either the tip of the lead or the electrode of the semiconductor chip, and the lead and the electrode are connected to each other by metal bonding via the bump contact. The TAB method is excellent in that it can be easily joined. However, since the TAB method creates device holes and beam leads, the manufacturing process is complicated and disadvantageous in cost.

On the other hand, in a mounting method using a film carrier having no device hole, similarly, a bump contact is provided at either a lead end or an electrode of a semiconductor chip, and these are connected via the bump contact. You. For this purpose, there are known a mounting method of making a connection by a mechanical method with an anisotropic conductive adhesive or a photocurable resin interposed and a mounting method of making a connection by metal bonding. The joining method is excellent. In addition, as a mounting method by metal bonding, a single point method in which contacts are connected to electrodes one by one and a method in which all contacts are collectively bonded to electrodes are known.

[0005] The single-point method is a highly reliable method because it is bonded to each pin, so that it is not easily affected by variations in contact height. However, the bonding time is longer than the batch bonding method, and the multi-pin IC is inferior in productivity. On the other hand, the batch joining method is a preferable mounting method in terms of productivity, cost, and the like. In such a mounting method, usually, the film carrier is fixed to the film carrier-side base with the bonding surface facing upward, and the semiconductor chip is arranged with the bonding surface facing downward, and heating and pressing are performed from above and below. This method is called a flip chip bonding method because the chips are arranged downward, and an apparatus that performs a series of operations relating to bonding is called a flip chip bonder. Furthermore, it is more advantageous to arrange the bump contacts required in such a mounting method on the film carrier side instead of the semiconductor chip side from the viewpoint of the manufacturing cost of the bump contacts.

FIG. 7 shows an example of a conventional flip chip bonding method. The figure is a cross-sectional view, and the semiconductor chip side base 1, the film carrier side base 2, and the conductive circuit 7 are hatched. FIG. 2A shows a state before the bump contacts and the electrodes of the semiconductor chip 3 are joined, and FIG. 2B shows a state in which the semiconductor chip-side base is lowered to join them. This shows a state in which the film carrier is pressed and heated with the film carrier interposed therebetween.

[0007] As shown in FIG.
Are fixed to the semiconductor chip side base 1 by vacuum suction, and an aluminum pad (not shown) is provided on the semiconductor chip as an electrode. Film carrier 4
Is fixed to the film carrier side base 2 by vacuum suction, a bump contact 5 is provided on one surface of an insulating substrate 6, and a conductive circuit 7 is provided inside the insulating substrate. And the conductive circuit are electrically connected. Also, the bump contact 5 and the semiconductor chip 3
Are positioned so that they can contact each other. Next, as shown in FIG. 2B, the bump contact and the electrode are joined by applying pressure and heating.

However, in flip chip bonding as described above, the electrodes of the semiconductor chip are often aluminum pads, and an oxide film is formed on the surface thereof. Therefore, in order to make the bump contacts and the electrodes well conductive, the oxide film is removed from the surface to expose the lower unoxidized aluminum, and an alloy is formed between the aluminum and the bump contacts by mutual diffusion. , It is necessary to form a metal bond. For that purpose, it is necessary to apply a sufficient load to the bump contact so that the oxide film is removed around by the shearing force generated when the bump contact collapses and spreads in the radial direction.

[0009]

However, in the conventional flip chip bonding in which the electrodes of the semiconductor chip are aluminum pads, especially in a region near the bump contact and where no other bump contact is provided. As shown in FIG. 7B, there is a possibility that the film carrier and the semiconductor chip come into contact with each other before the deformation required for bonding occurs at the bump contact. Therefore, the load is not concentrated on the bump contact but is dispersed, the deformation of the bump contact does not progress,
There is a problem that the bump contact and the electrode cannot be sufficiently joined. Also, for example, even when the electrode is other than an aluminum pad such as a gold-plated electrode, the load required for bonding does not concentrate on the bump contact, and good metal bonding may not be obtained.

The above-mentioned contact is likely to occur when the height of the bump contact is low.
It was remarkable when it was less than 0 μm. On the other hand, when the height of the bump contact is 30 μm or more, the occurrence of the above-mentioned problem tends to decrease. However, producing a bump contact having a height of 30 μm or more has a problem that the manufacturing cost increases.

After the semiconductor chip is mounted on the film carrier, it is usually necessary to pot the liquid resin or to inject the resin into the gap between the film carrier and the semiconductor chip to cure and seal the resin. Must be after-cured. Therefore, there is a problem that it is difficult to simplify the process and shorten the production time.

An object of the present invention is to provide a method and apparatus for manufacturing a semiconductor device which solves the above-mentioned problems and improves the bonding between a bump contact and an electrode.

[0013]

The manufacturing method of the present invention has the following features. (1) A method of manufacturing a semiconductor device in which a semiconductor chip is mounted on a film carrier, wherein the film carrier has bump contacts, and the bump contacts of the film carrier and the electrodes of the semiconductor chip are brought into contact with each other. These are overlapped, sandwiched between a semiconductor chip-side base, and a film carrier-side base provided with a projection at a position corresponding to the back surface of the bump contact of the film carrier, and heated and pressed to separate the bump contact and the electrode. A method for manufacturing a semiconductor device, comprising joining.

(2) The method of manufacturing a semiconductor device according to (1), wherein the electrodes of the semiconductor chip are aluminum pads.

(3) The method for manufacturing a semiconductor device according to (1), wherein a layer made of Au is provided on the surface of the bump contact.

(4) The method of manufacturing a semiconductor device according to (1), wherein the electrodes of the semiconductor chip are aluminum pads, and a layer made of Au is provided on the surface of the bump contact.

(5) The method according to (1) or (4), wherein the height of the bump contact is 30 μm or less from the film carrier.

(6) The semiconductor according to (1), wherein an adhesive layer is further provided on the surface of the film carrier where the bump contacts are provided, and the bump contacts are exposed on the surface of the adhesive layer. Device manufacturing method.

(7) In the film carrier, bump contacts are provided on one surface of the insulating substrate, and a conductive circuit is provided on any surface or inside of the insulating substrate. The method of manufacturing a semiconductor device according to the above (1), wherein the semiconductor device has a conductive structure.

(8) A method for forming a bump contact is to provide a through hole at a position where a bump contact is to be formed on an insulating substrate, to expose a conductive circuit at the bottom of the through hole, and to provide a contact material in the through hole. (7) The method for manufacturing a semiconductor device according to the above (7), wherein the contact material is deposited and filled, and a contact material the same as or different from the contact material is deposited and projected from the surface of the insulating substrate to form a bump contact.

(9) The semiconductor according to the above (7), wherein an external connection electrode is provided on the back surface of the film carrier on the surface where the bump contacts are provided, and the external connection electrode and the conductive circuit are electrically connected. Device manufacturing method.

The manufacturing apparatus of the present invention has the following features. (10) An apparatus for manufacturing a semiconductor device by mounting a semiconductor chip on a film carrier, comprising: a film carrier-side base provided with a projection at a position corresponding to a back surface of a bump contact of the film carrier; and a semiconductor chip-side base. The film carrier-side base and the semiconductor chip-side base are sandwiched between the bump contacts of the film carrier and the electrodes of the semiconductor chip, which are overlapped, and heated and pressed, and the bump contacts and the electrodes are separated. A manufacturing apparatus characterized by being joined.

[0023]

According to the present invention, a convex portion is provided so as to be able to contact a position corresponding to the back surface of the bump contact of the film carrier, and pressure and heating are performed by sandwiching the convex portion and the semiconductor chip side base. Therefore, even when the height of the bump contact is low, the load can be concentrated on the bump contact, and the bump contact can perform deformation required for bonding.
Therefore, the bump contact and the electrode can be satisfactorily bonded. Also, by providing an adhesive layer on the surface of the film carrier where the bump contacts are provided and joining the bump contacts and the electrodes, the gap between the film carrier and the semiconductor chip is sealed regardless of a separate process. Can be.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method of manufacturing a semiconductor device according to the present invention will be described in detail with a manufacturing apparatus. FIG. 1 is a cross-sectional view illustrating an example of a method and an apparatus for manufacturing a semiconductor device according to the present invention, and also illustrates a resulting semiconductor device. In FIG. 1, only a part is shown, and the semiconductor chip-side base 1, the film carrier-side base 2, and the conductive circuit 7 are hatched.
FIG. 2A shows a state before the bump contacts 5 and electrodes (not shown) of the semiconductor chip 3 are joined, and FIG. 2B shows a state in which the semiconductor chip-side base is joined to join them. This shows a state in which the semiconductor chip and the film carrier are sandwiched by being lowered and pressurized and heated.

As shown in FIG. 1A, the semiconductor chip 3
Is fixed to the semiconductor chip side base 1 by vacuum suction, and an aluminum pad (not shown) is provided as an electrode thereof. The film carrier 4 is fixed to the film carrier side base 2 by vacuum suction. The film carrier side base 2 is provided with a convex portion 2a on a base substrate 2b, and the convex portion 2a is formed on the back surface of the bump contact. Is in contact with the position corresponding to. Further, the film carrier 4 has a bump contact 5 provided on one surface of an insulating substrate 6, a conductive circuit 7 provided inside the insulating substrate,
It has a structure in which the bump contact and the conductive circuit are electrically connected by the conductive substance filled in the through hole 8. Gold is used as the material of the bump contact. Further, the bump contacts and the electrodes are aligned so that they can contact each other.

As shown in FIG. 1B, a sufficient load can be concentrated on the bump contact by the convex portion 2a provided on the film carrier side base 2, and the bump contact is oxidized on the electrode surface of the semiconductor chip. The membrane can be deformed so that it can be removed to the surroundings. Therefore, the bump contact and the electrode are satisfactorily joined.

The pressure for joining the bump contact and the electrode is performed by sandwiching the bump contact between the base on the film carrier side and the base on the semiconductor chip side. good. Pressing may be performed by fixing the semiconductor chip and the film carrier as shown in FIG. 1 to the respective bases and moving one or both bases. It is also possible to fix only one of them to the base, overlay the other on it, and lower the other base from above. In addition, it is preferable that the base is moved or lowered by being driven by an AC servomotor having excellent resolution and a ball screw.

When the film carrier or the semiconductor chip is fixed to the base, fixing by vacuum suction, electrostatic suction or the like can be mentioned, but fixing by vacuum suction is preferable because of high reliability. Further, it is preferable to provide holes, pins, and the like for positioning the film carrier and the semiconductor chip on the base.

Heating for bonding the bump contact and the electrode is performed indirectly via a base, and either one of the bases may be heated, or both bases may be heated. Heating the chip preferentially has better thermal conductivity to the joint, so the base on the semiconductor chip side is heated,
It is preferred to heat the film carrier side base as needed. The heating method and the heating temperature are not particularly limited as long as they satisfy the following bonding conditions. Further, as a heating method, a known heating method such as a pulse heat or a constant heat can be appropriately used.

The bonding conditions between the bump contact and the electrode are as follows:
Pressing condition is 0.05kgf ~ 1.0 per bump contact
It is preferable that the heating time is set to 300 ° C. to 500 ° C. in the bonding portion, for 0.1 second to 120 seconds in kgf. Further, the pressing condition is set to 0.1 kgf to 0.
It is particularly preferable to set the heating condition to 350 ° C. to 450 ° C. in the joining portion at 4 kgf for 1 second to 30 seconds.

The base on the film carrier side has a projection, and any base can be used as long as the projection can be brought into contact with a position corresponding to the back surface of the bump contact of the film carrier. Also,
There is no particular limitation as long as the film carrier and the semiconductor chip can be sandwiched from the film carrier side and used to perform the above-described pressurization and heating from being used together with the semiconductor chip side base. Further, a stage of a known flip chip bonder may be used as a base substrate, and a projection may be provided on the base substrate.

The shape of the base on the film carrier side is not particularly limited as long as the film carrier can be fixed and the load at the time of joining tends to concentrate on the bump contact. Therefore,
It may be a rectangular parallelepiped or a disk, and may be determined according to the purpose, the target film carrier, and the like. Also, the size is not limited, and may be determined according to the size of the film carrier, as long as the film carrier can be fixed. Further, as the material, a material used as a stage of a so-called flip chip bonder can be suitably used.

The convex portion can contact a position corresponding to the back surface of the bump contact, and may be any as long as it protrudes from the base substrate toward the film carrier. Further, it may be formed integrally with the base substrate or may be formed separately. The shape, height, and the like of the protrusion may be determined so that a necessary load can be applied according to the form of the bump contact. For example, if the bump contact has a hemispherical shape and its height is less than 30 μm, it is preferable that the projection has a flat top. Further, in this case, the contact area of the convex portion with the film carrier is preferably 100% to 500% of the contact area of the bump contact with the film carrier, and more preferably 100% to 500%.
Particularly preferred is 300%. The height of the projection is preferably 10 μm to 100 μm, and 20 μm.
It is particularly preferred that the thickness be from m to 50 μm.

The projections may be formed individually for one bump contact, or may be one continuous shape formed so as to contact all the positions corresponding to the back surfaces of the plurality of bump contacts. Is also good. Specifically, if the bump contacts are arranged in a rectangular shape, a film carrier-side base having a rectangular convex portion shown in FIG. 6A or an individual convex portion shown in FIG. Can be used. In addition,
This figure is a top view showing an example of the convex portion, and the convex portion is hatched. The material of the convex portion may be any material that does not deteriorate or be damaged by pressure or heating, and if formed separately from the base substrate, the material used as the so-called flip chip bonder stage or stainless steel, Ceramics and the like can be suitably used.

FIGS. 2 and 3 are cross-sectional views showing an example of the film carrier-side base. The film carrier-side base is hatched, and the film carrier and the semiconductor chip show only the outer shape of the cross section. FIG. 3 shows a case where the projection 2a is formed separately from the base substrate 2b.

The base on the semiconductor chip side is not particularly limited as long as it can perform the above-mentioned heating and pressurization while sandwiching the semiconductor chip and the film carrier from the semiconductor chip side. Further, any material that does not easily deteriorate or be damaged may be used, and a known semiconductor chip-side base used for flip chip bonding can be used.

The shape of the base on the semiconductor chip side is not particularly limited, and may be determined according to the shape of the semiconductor chip, and a shape such as a square or a circle can be arbitrarily selected and used. The size may be determined according to the size of the semiconductor chip, and it is preferable that the size is not smaller than the semiconductor chip. Further, as the material, a material for pulse heat and constant heat used in a so-called flip chip bonder can be suitably used.

Further, in order to obtain a uniform joining state in each electrode, it is necessary to arrange the semiconductor chip and the film carrier such that the electrode surface of the semiconductor chip and the film carrier surface are parallel at the time of joining. . For that purpose, the flatness and the parallelism of each base fixing the joint portion of the semiconductor chip and the film carrier are important.
Particularly important are the flatness of the semiconductor chip mounting surface of the semiconductor chip side base, the flatness of the surface formed by the tip of each projection, the semiconductor chip mounting surface of the semiconductor chip side base and the tip of each projection. The degree of parallelism with the surface formed by the part is preferably 10 μm or less, and particularly preferably 5 μm or less.

The film carrier has a bump contact on one surface, and it is sufficient that all the bump contacts are directly and collectively joined to the electrodes of the semiconductor chip. Specifically, bump contacts are provided on one surface of the insulating substrate,
A film carrier having a structure in which a conductive circuit is provided on any surface or inside the insulating substrate, and the bump contact and the conductive circuit are conducted, is preferable. FIG. 4 shows an example of a film carrier. The figure is a cross-sectional view, and the conductive circuits are hatched.

Preferably, an adhesive layer is further laminated on the surface of the film carrier on which the bump contacts are provided, and this layer corresponds to the bump contacts so as not to hinder the bonding between the bump contacts and the electrodes. It is necessary to have a through hole or the like at the position. FIG. 5 shows an example of a film carrier provided with an adhesive layer 9. The figure is a cross-sectional view, in which the conductive circuit and the adhesive layer are hatched.
By laminating such an adhesive layer, the gap between the film carrier and the semiconductor chip can be sealed without providing a separate step. In addition, epoxy resin, polyimide resin, silicone resin, phenol resin, and the like are used as the adhesive.
It can be selected according to the purpose irrespective of a thermosetting resin or a thermoplastic resin.

The insulating substrate is not particularly limited as long as it has electrical insulation, but preferably has flexibility as well as insulation. Examples of the material for the insulating substrate include resins such as polyimide, polyethylene terephthalate, polyetherimide, polyethersulfone, polyphenylenesulfide, and polyetheretherketone. The insulating substrate may have a single-layer structure using only one of these, or a multilayer structure using two or more thereof, and may be selected according to the purpose. On the insulating substrate,
Among these resins, it is preferable to use polyimide that exhibits excellent heat resistance, chemical resistance, and mechanical strength. In addition, the thickness of the insulating substrate can be arbitrarily selected, but in order to have sufficient mechanical strength and flexibility, 10 μm to 100 μm, preferably 20 μm, including the conductive wire circuit.
It is good to set it to μm to 50 μm.

The conductive circuit may be formed as long as it is formed inside the position where the bump contact is to be formed on the insulating substrate or at a position corresponding to the back surface. The material of the conductive circuit is not particularly limited as long as it has conductivity regardless of a conductor or a semiconductor, but a known good conductor metal is preferable.
For example, gold, silver, copper, platinum, lead, tin, nickel, iron, cobalt, indium, rhodium, chromium, tungsten,
Single metals such as ruthenium, or various alloys containing these as components, for example, solder, nickel-tin, gold-cobalt and the like can be mentioned. Further, a multilayer structure may be formed by using a plurality of types from the above metals and alloys.

As a method of forming the conductive circuit, a known circuit pattern forming method may be used. A method of directly drawing and forming a target circuit pattern on an insulating substrate (additive method) and a method of forming a target circuit pattern are described below. A method (subtractive method) of forming by removing other conductor portions so as to leave them.

The bump contact is in conduction with the conductive circuit,
There is no particular limitation as long as it can be electrically connected to the semiconductor chip. The bump contact may have a hemispherical shape, for example, a shape protruding from a film carrier. Materials used for bump contacts include gold,
Examples include silver, copper, nickel, lead, chromium, zinc, aluminum, and the like, and alloys thereof. In addition, the configuration of the bump contact may be one using only one of these, or one obtained by laminating two or more different metals.

The material of the bump contact is preferably one that can form an alloy with the electrode material of the semiconductor chip by applying pressure and heat to perform metal bonding. Therefore, the combination of the material of the electrode of the semiconductor chip and the material of the bump contact of the film carrier is an important factor for obtaining a good bonding state. Among the combinations of the material of the bump contact and the electrode material such as aluminum, solder, and copper, in particular, the electrode of the semiconductor chip is an aluminum pad, and at least the surface of the bump contact of the film carrier that contacts the electrode is gold (A).
The combination referred to as u) is a combination that can make the production method of the present invention most useful. At this time, the bump contact directly forms an alloy with the electrode, and can easily form a metal bond, resulting in a good connection state.

The method of conduction between the bump contact and the conductive circuit is not limited. However, if the conductive circuit is provided inside the insulating substrate or on the back surface of the surface on which the bump contact is provided, the through hole is used. Preferred conduction methods are preferred. Specifically, as shown in FIGS. 4 and 5, a through hole 8 is provided at a position where a bump contact of a film carrier is provided, a conductive circuit is exposed at the bottom of the through hole, and a conductive material is filled in the through hole. Then, a conductive material layer is formed on the wall surface of the through-hole as in the case of through-hole plating to conduct the bump contact and the conductive circuit. In this case, the diameter of the through-hole is not limited, but the electrical resistance can be reduced by increasing the through-hole to such an extent that adjacent through-holes are not connected. The practical hole diameter of the through hole is 10 μm to 200 μm, particularly 30 μm.
About 100 μm is preferable.

The method for forming the bump contact includes electrolytic plating, electroless plating, vapor deposition, stud bump method, etc., which may be selected according to the purpose. Among these, the formation method by electrolytic plating is preferable from the viewpoint of easiness of the production method, stability of quality and balance of cost. In the case of a method for forming a bump contact by electrolytic plating, after providing the above-described through-hole, a contact material is deposited and filled in the through-hole using the conductive circuit as a negative electrode, and further deposition is continued to form an insulating substrate. By projecting the contact material from the surface of the bump, a bump contact can be formed.

If the height of the bump contact is 30 μm or more from the film carrier, the production cost increases, and it is particularly preferable that the height is 0 μm to 30 μm in order to secure the bonding property. The height of the bump contact is
It refers from the surface of the film carrier on which the bump contacts are provided to the top of the bump contacts, and if the adhesive layer is provided, from the surface of the adhesive layer to the top of the bump contacts.

It is preferable that the film carrier is provided with an external connection electrode for connecting to external devices or substrates, and the external connection electrode is particularly provided that it is electrically connected to a conductive circuit. Not limited. For conduction with the conductive circuit, conduction using a through-hole similar to the above-mentioned bump contact or conduction by a TAB external lead method can be used. Examples of the method of forming the electrodes include a method of forming the solder balls by reflow and a method of forming the electrodes by the same electrolytic plating as the bump contacts. The external connection electrode can be formed appropriately before or after the bonding between the film carrier and the semiconductor chip.

The semiconductor chip is formed on a silicon substrate, and is not particularly limited as long as it is a bare chip such as an integrated circuit or a single element before packaging, and may be a known chip. The electrodes of the semiconductor chip are not particularly limited, but those having a flat shape are preferable. Further, if gold is used on at least the surface of the bump contact which is in contact with the electrode, the electrode is preferably an aluminum pad for the above-described reason.

[0051]

EXAMPLES The present invention will be specifically described below with reference to examples. A semiconductor device was manufactured by actually mounting a semiconductor chip on a film carrier by the manufacturing method shown in FIG.

Example 1 A semiconductor device was manufactured using a film carrier having the same structure as the film carrier shown in FIG. 4 as the film carrier.

[Preparation of Film Carrier] Thickness 100 μm
An electrically conductive circuit having a thickness of 35 μm was formed on the polyimide resin layer having a thickness of m, and a polyimide resin layer having a thickness of 25 μm was further formed thereon to produce an insulating substrate. Next, a through-hole having a circular cross section of 80 μm was provided at a position where a bump contact of a polyimide layer having a thickness of 25 μm was to be provided, and a conductive circuit was exposed on the bottom surface. The through hole has a side length of 8 m according to the position of the electrode of the target semiconductor chip.
160 pieces were provided at a pitch of 200 μm so that the center of the cross section of the through-hole was located on the side of the square of m. Furthermore, using gold as the contact material, performing electroplating using the conductive circuit as a negative electrode, filling the through-hole with the contact material, and continuing the electrolytic plating so that the contact material protrudes from the surface of the insulating substrate. When the height reached 20 μm from the surface, the plating was stopped to form a bump contact having a height of 20 μm.

[Preparation of Film Carrier-side Base] A rectangular frame-shaped SUS plate (outside diameter L × M: FIG. 6A) is mounted on a stage of a known flip chip bonder used for flip chip bonding. 15mm × 15
mm, frame width N: 3.75 mm, thickness: 20 μm) were attached as projections to produce a film carrier.

[Joining of Film Carrier and Semiconductor Chip] The film carrier is fixed to the film carrier-side base by vacuum suction so that the convex portion comes into contact with the position corresponding to the back surface of the bump contact. Next, on a semiconductor chip side base used for known flip chip bonding,
The semiconductor chip is fixed by vacuum suction so that the bump contact and the electrode can come into contact. The semiconductor chip is a bare chip of the integrated circuit before the package, and its electrodes are aluminum pads. Next, the base on the semiconductor chip side is heated to 350 ° C. by a pulse heater, moved toward a film carrier to bring the bump contacts into contact with the electrodes, and further pressed under a load of 30 kgf for 10 seconds to bring the bump contacts and the electrodes into contact. The semiconductor device was obtained by bonding.

[Evaluation of Joining State] In the film carrier and the semiconductor chip after the joining, when the film carrier was peeled at 90 degrees to the chip, all the bump contacts were transferred to the semiconductor chip. From this, it can be determined that the bump contact and the electrode are satisfactorily joined. Note that 90-degree peeling means that the film carrier is pulled at an angle of 90 degrees with respect to the semiconductor chip and peeled off.

Example 2 The outer shape of a rectangular frame-like plate used as a projection was 8.25 mm.
Example 1 except that the frame width was 0.5 mm and × 8.25 mm.
The bump contact and the electrode were joined in the same manner as described above, and evaluation was performed. As a result, the same result as in Example 1 was obtained.

Example 3 A semiconductor device was manufactured using a film carrier having the same structure as the film carrier shown in FIG. 5 as the film carrier.

A conductive circuit having a thickness of 18 μm is formed on a polyimide resin layer having a thickness of 10 μm, a polyimide resin layer having a thickness of 15 μm is formed thereon, and a thermal circuit having a thickness of 10 μm is further formed thereon. An insulating substrate was manufactured by forming a layer of a plastic polyimide resin. Next, a through-hole was formed in the thermoplastic polyimide resin layer at a position where the bump contact was to be provided in the same manner as in Example 1, and a bump contact having a height of 10 μm was formed by electrolytic plating. The bump contact has a two-layer structure, using copper as the first contact material and depositing it until the height becomes 5 μm, further using gold as the contact material, and depositing until the thickness of the gold layer becomes 5 μm. Formed.

Next, the thickness of the plate used as the projection of the film carrier side base was set to 50 μm, and the heating condition was set to 400 μm.
C., and the bump contact and the electrode were joined and evaluated in the same manner as in Example 1 except that the pressing condition was changed to 40 kgf for 10 seconds. The results were the same as in Example 1.

Example 4 A thermosetting epoxy resin was used in place of the thermoplastic polyimide resin, the heating condition was 300 ° C., and the pressing condition was 30 k
Except that gf was set to 10 seconds, the bump contact and the electrode were joined and evaluated in the same manner as in Example 3, and the same results as in Example 1 were obtained.

COMPARATIVE EXAMPLE 1 A bump contact and an electrode were joined and evaluated in the same manner as in Example 1 except that no projection was attached. When the evaluation was performed, the bump contact was not transferred to the semiconductor chip.

COMPARATIVE EXAMPLE 2 A bump contact and an electrode were joined and evaluated in the same manner as in Example 3 except that no projection was attached. When the evaluation was performed, the bump contact was not transferred to the semiconductor chip.

As described above, in the semiconductor device manufactured by the manufacturing method of the present invention, the bump contact provided on the film carrier and the electrode of the semiconductor chip are satisfactorily joined.

[0065]

According to the present invention, all bump contacts and the electrodes of the semiconductor chip can be satisfactorily and collectively joined even if the bump contacts have a low height, especially a bump contact having a height of less than 30 μm. . Therefore, it is excellent in productivity, and it is not necessary to increase the height of the bump contact, so that the manufacturing cost of the bump contact can be suppressed. Furthermore, after bonding the bump contact and the electrode, the gap between the film carrier and the semiconductor chip can be sealed with a resin without providing a separate step.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a method and an apparatus for manufacturing a semiconductor device according to the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a film carrier-side base.

FIG. 3 is a cross-sectional view illustrating an example of a film carrier-side base.

FIG. 4 is a sectional view showing an example of a film carrier.

FIG. 5 is a cross-sectional view illustrating an example of a film carrier.

FIG. 6 is a top view showing an example of a projection provided on a film carrier-side base.

FIG. 7 is a sectional view showing an example of a conventional flip chip bonding.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip side base 2 Film carrier side base 2a Convex part 2b Base substrate 3 Semiconductor chip 4 Film carrier 5 Bump contact 6 Insulating substrate 7 Conductive circuit 8 Through hole

Continuing from the front page (72) Inventor Nobuhiko Yoshio 1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation (72) Inventor Hiroshi Yada 1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko stock In company

Claims (10)

[Claims] 1. A method for manufacturing a semiconductor device comprising a semiconductor chip mounted on a film carrier, wherein the film carrier has bump contacts, and the bump contacts of the film carrier and the electrodes of the semiconductor chip are brought into contact with each other. These are sandwiched between a semiconductor chip-side base and a film carrier-side base provided with a protrusion at a position corresponding to the back surface of the bump contact of the film carrier, and heated and pressed to form the bump contact and the electrode. And a method of manufacturing a semiconductor device. 2. The method according to claim 1, wherein the electrodes of the semiconductor chip are aluminum pads. 3. The method according to claim 1, wherein a layer made of Au is provided on the surface of the bump contact. 4. The method according to claim 1, wherein the electrodes of the semiconductor chip are aluminum pads, and a layer made of Au is provided on the surface of the bump contact. 5. The method according to claim 1, wherein the height of the bump contact is 30 μm or less from the film carrier. 6. The semiconductor device according to claim 1, wherein an adhesive layer is further provided on the surface of the film carrier on which the bump contacts are provided, and the bump contacts are exposed on the surface of the adhesive layer. Production method. 7. A film carrier, wherein a bump contact is provided on one surface of an insulating substrate, a conductive circuit is provided on any surface or inside of the insulating substrate, and the bump contact and the conductive circuit are electrically connected. 2. The method of manufacturing a semiconductor device according to claim 1, wherein said method has a structure. 8. A method of forming a bump contact, comprising the steps of: forming a through hole at a position where a bump contact is to be formed with respect to an insulating substrate; exposing a conductive circuit at a bottom of the through hole; 8. The method of manufacturing a semiconductor device according to claim 7, wherein the contact material is deposited and filled, and a contact material the same as or different from the contact material is deposited and projected from the surface of the insulating substrate to form a bump contact. 9. The semiconductor device according to claim 7, wherein an external connection electrode is provided on a back surface of the surface of the film carrier where the bump contact is provided, and the external connection electrode and the conductive circuit are electrically connected. Production method. 10. An apparatus for manufacturing a semiconductor device by mounting a semiconductor chip on a film carrier, comprising: a film carrier-side base provided with a projection at a position corresponding to a back surface of a bump contact of the film carrier; And a film carrier-side base and a semiconductor chip-side base, in which the bump contact of the film carrier and the electrode of the semiconductor chip are brought into contact with each other and sandwiched, and heated and pressed to apply the bump contact and the electrode. And a bonding apparatus for joining the two.