JPH11103129A - 垂直空洞面発光レーザ及びその製造方法 - Google Patents

垂直空洞面発光レーザ及びその製造方法

Info

Publication number
JPH11103129A
JPH11103129A JP10218889A JP21888998A JPH11103129A JP H11103129 A JPH11103129 A JP H11103129A JP 10218889 A JP10218889 A JP 10218889A JP 21888998 A JP21888998 A JP 21888998A JP H11103129 A JPH11103129 A JP H11103129A
Authority
JP
Japan
Prior art keywords
layer
mirror
vcsel
layers
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10218889A
Other languages
English (en)
Japanese (ja)
Inventor
Scott W Corzine
スコット・ダブリュー・コージン
Richard P Schneider Jr
リチャード・ピー・シュネイダー，ジュニア
Michael R T Tan
マイケル・アール・ティー・タン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH11103129A publication Critical patent/JPH11103129A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
    • H01S5/2228—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP10218889A 1997-08-15 1998-08-03 垂直空洞面発光レーザ及びその製造方法 Pending JPH11103129A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US911,708 1986-09-26
US08/911,708 US5896408A (en) 1997-08-15 1997-08-15 Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets

Publications (1)

Publication Number Publication Date
JPH11103129A true JPH11103129A (ja) 1999-04-13

Family

ID=25430725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10218889A Pending JPH11103129A (ja) 1997-08-15 1998-08-03 垂直空洞面発光レーザ及びその製造方法

Country Status (4)

Country Link
US (1) US5896408A (fr)
EP (1) EP0898344A3 (fr)
JP (1) JPH11103129A (fr)
KR (1) KR19990023547A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004063969A (ja) * 2002-07-31 2004-02-26 Victor Co Of Japan Ltd 面発光レーザ
JP2007103544A (ja) * 2005-10-03 2007-04-19 Ricoh Co Ltd 面発光レーザ及び面発光レーザアレイ及び光伝送システム及びレーザプリンタ書き込みシステム
JP2007258600A (ja) * 2006-03-24 2007-10-04 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザ素子の製造方法
JP2008530774A (ja) * 2005-02-07 2008-08-07 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） 局所的な埋込み絶縁体を形成するためのプレナー酸化方法
US7580436B2 (en) 2003-09-18 2009-08-25 Seiko Epson Corporation Surface-emitting type semiconductor laser and method for manufacturing the same
US7879632B2 (en) 2007-07-31 2011-02-01 Canon Kabushiki Kaisha Method for manufacturing surface-emitting laser

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US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US5978408A (en) 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6480516B1 (en) * 1999-03-31 2002-11-12 Japan As Represented By Secretary Of Agency Of Industrial Science And Technology Surface semiconductor optical amplifier with transparent substrate
JP2000307190A (ja) 1999-04-23 2000-11-02 Furukawa Electric Co Ltd:The 面発光型半導体レーザの作製方法
US7881359B2 (en) * 1999-04-23 2011-02-01 The Furukawa Electric Co., Ltd Surface-emission semiconductor laser device
US7368316B2 (en) * 1999-04-23 2008-05-06 The Furukawa Electric Co., Ltd. Surface-emission semiconductor laser device
US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
US6411638B1 (en) 1999-08-31 2002-06-25 Honeywell Inc. Coupled cavity anti-guided vertical-cavity surface-emitting laser
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6545335B1 (en) * 1999-12-27 2003-04-08 Xerox Corporation Structure and method for electrical isolation of optoelectronic integrated circuits
US6548908B2 (en) * 1999-12-27 2003-04-15 Xerox Corporation Structure and method for planar lateral oxidation in passive devices
US6674090B1 (en) * 1999-12-27 2004-01-06 Xerox Corporation Structure and method for planar lateral oxidation in active
US6621844B1 (en) 2000-01-18 2003-09-16 Xerox Corporation Buried oxide photonic device with large contact and precise aperture
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US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6573528B2 (en) * 2000-10-12 2003-06-03 Walter David Braddock Detector diode with internal calibration structure
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6687268B2 (en) * 2001-03-26 2004-02-03 Seiko Epson Corporation Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
US6534331B2 (en) 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
US6680963B2 (en) 2001-07-24 2004-01-20 Lux Net Corporation Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6553053B2 (en) 2001-07-25 2003-04-22 Luxnet Corporation Vertical cavity surface emitting laser having improved light output function
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US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
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US20070091961A1 (en) * 2005-10-07 2007-04-26 Chao-Kun Lin Method and structure for low stress oxide VCSEL
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Cited By (7)

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Publication number Priority date Publication date Assignee Title
JP2004063969A (ja) * 2002-07-31 2004-02-26 Victor Co Of Japan Ltd 面発光レーザ
US7580436B2 (en) 2003-09-18 2009-08-25 Seiko Epson Corporation Surface-emitting type semiconductor laser and method for manufacturing the same
US7983319B2 (en) 2003-09-18 2011-07-19 Seiko Epson Corporation Surface-emitting type semiconductor laser that controls polarization directions of laser light and method for manufacturing the same
JP2008530774A (ja) * 2005-02-07 2008-08-07 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） 局所的な埋込み絶縁体を形成するためのプレナー酸化方法
JP2007103544A (ja) * 2005-10-03 2007-04-19 Ricoh Co Ltd 面発光レーザ及び面発光レーザアレイ及び光伝送システム及びレーザプリンタ書き込みシステム
JP2007258600A (ja) * 2006-03-24 2007-10-04 Furukawa Electric Co Ltd:The 面発光レーザ素子および面発光レーザ素子の製造方法
US7879632B2 (en) 2007-07-31 2011-02-01 Canon Kabushiki Kaisha Method for manufacturing surface-emitting laser

Also Published As

Publication number Publication date
EP0898344A3 (fr) 2000-04-26
KR19990023547A (ko) 1999-03-25
EP0898344A2 (fr) 1999-02-24
US5896408A (en) 1999-04-20

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