JPH11111699A - Gas cleaning device and gas cleaning method - Google Patents
Gas cleaning device and gas cleaning methodInfo
- Publication number
- JPH11111699A JPH11111699A JP29155497A JP29155497A JPH11111699A JP H11111699 A JPH11111699 A JP H11111699A JP 29155497 A JP29155497 A JP 29155497A JP 29155497 A JP29155497 A JP 29155497A JP H11111699 A JPH11111699 A JP H11111699A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cleaning
- film
- gas cleaning
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 71
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 52
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【課題】ガスクリーニング後の成膜速度の低下や膜厚分
布の劣化あるいはデバイス特性の劣化を防止して生産歩
留の向上を図ることができるガスクリーニング装置およ
び方法を提供する。
【解決手段】成膜用の原料ガスをガイドパイプ３から導
入し、高周波電力を印加してプラズマＣＶＤ法により基
板１３上に成膜する。この成膜を所定回数繰り返して所
定枚数の基板１３上に成膜を行う。その後、エッチング
ガスをガイドパイプ３から導入し、高周波電力を印加し
てプラズマを発生させ、ガスクリーニングを行う。その
後、アルゴンガスをガイドパイプ３から導入し、高周波
電力を印加してプラズマを発生させる。このようにして
次の成膜に備えて処理室１内の前処理を行う。以下上記
各工程を所定回数繰り返す。
[PROBLEMS] To provide a gas cleaning apparatus and a method capable of preventing a decrease in a film forming rate, a deterioration in a film thickness distribution, or a deterioration in device characteristics after a gas cleaning and an improvement in a production yield. I do. A source gas for film formation is introduced from a guide pipe, and high-frequency power is applied to form a film on a substrate by a plasma CVD method. This film formation is repeated a predetermined number of times to form a film on a predetermined number of substrates 13. Thereafter, an etching gas is introduced from the guide pipe 3, high-frequency power is applied to generate plasma, and gas cleaning is performed. Thereafter, argon gas is introduced from the guide pipe 3, and high-frequency power is applied to generate plasma. In this way, the pretreatment in the processing chamber 1 is performed in preparation for the next film formation. Hereinafter, the above steps are repeated a predetermined number of times.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ガスクリーニング
装置およびガスクリーニング方法に関し、特に、プラズ
マによるガスクリーニングが行われる半導体製造装置お
よび液晶表示素子製造装置、ならびに半導体製造装置や
液晶表示素子製造装置におけるプラズマによるガスクリ
ーニング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas cleaning apparatus and a gas cleaning method, and more particularly to a semiconductor manufacturing apparatus and a liquid crystal display element manufacturing apparatus for performing gas cleaning by plasma, and a semiconductor manufacturing apparatus and a liquid crystal display element manufacturing apparatus. The present invention relates to a gas cleaning method using plasma.
【０００２】[0002]
【従来の技術】半導体製造工程や液晶表示素子製造工程
の１つに、基板上に所定の成膜を行うプラズマＣＶＤ
（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏ
ｎ）成膜工程がある。これは気密な処理室に基板を装填
し、該処理室内に設けられた一対の電極間に反応ガスを
供給しながら高周波電力を印加してプラズマを発生さ
せ、気相のガス分子をプラズマにより分解して基板表面
に薄膜を形成するものである。ところが、このプラズマ
ＣＶＤ成膜処理においては、基板上のみならず、電極や
処理室内壁にも成膜されるため、成膜工程の繰り返しに
伴い、電極や処理室内壁に付着・堆積した膜はやがて剥
離し、処理中の基板上に付着して基板を汚染してしま
う。この汚染は、膜機能を著しく低下させ、生産性の低
下を招くため、是非とも排除すべき事象である。そこで
従来は、処理室内の定期的な清掃により、この汚染を排
除していた。2. Description of the Related Art In one of a semiconductor manufacturing process and a liquid crystal display device manufacturing process, plasma CVD for forming a predetermined film on a substrate is used.
(Chemical Vapor Deposition
n) There is a film forming step. In this method, a substrate is loaded into an airtight processing chamber, plasma is generated by applying high-frequency power while supplying a reaction gas between a pair of electrodes provided in the processing chamber, and gas molecules in a gas phase are decomposed by the plasma. To form a thin film on the substrate surface. However, in this plasma CVD film forming process, since the film is formed not only on the substrate but also on the electrode and the inner wall of the processing chamber, the film adhered and deposited on the electrode and the inner wall of the processing chamber may be formed as the film forming process is repeated. Eventually, it peels off and adheres to the substrate being processed, contaminating the substrate. This contamination is a phenomenon that must be eliminated because it significantly reduces the membrane function and lowers productivity. Conventionally, this contamination has been eliminated by periodically cleaning the processing chamber.
【０００３】[0003]
【発明が解決しようとする課題】しかし、処理室の清掃
はたとえ処理室の構成部品の交換等により時間短縮でき
るにしても相当の時間を要し、かつ処理室の清掃には処
理室の温度降下や大気開放等の事前工程あるいは清掃後
の真空排気や温度上昇および安定化等の事後工程が付随
するので、装置の稼働率を低下させていた。However, even if the cleaning of the processing chamber can be shortened by replacing the components of the processing chamber or the like, a considerable time is required, and the cleaning of the processing chamber requires the temperature of the processing chamber. A pre-process such as descent or opening to the atmosphere, or a post-process such as evacuation after cleaning, temperature rise and stabilization, and the like are accompanied, thereby reducing the operation rate of the apparatus.
【０００４】近年、成膜と同様にプラズマによる処理室
内のクリーニング技術が注目を集めている。これは、成
膜と同様に、ＮＦ3 やＳＦ6 等のクリーニングガス（エ
ッチングガス）を処理室内に供給しながら、高周波電力
を印加してプラズマを発生させ、気相のクリーニング
（エッチング）ガス分子をプラズマにより分解して、電
極や処理室内壁に付着・堆積した膜を除去するものであ
る。この方法は、従来からの清掃作業に比較して、温度
降下や大気開放あるいは真空排気や温度上昇といった付
随工程を省略することができるため、稼働率向上に非常
に有効である。しかし、特にＮＦ3 やＳＦ6 等のクリー
ニングガスによりガスクリーニングを施した場合、処理
室内にフッ化物が生成され、これによりクリーニング後
の処理室における成膜速度の低下や膜厚分布の劣化ある
いはデバイス特性の劣化を招いていた。In recent years, a technique for cleaning the inside of a processing chamber by plasma has attracted attention as in the case of film formation. This is similar to film formation, in which a cleaning gas (etching gas) such as NF 3 or SF 6 is supplied into a processing chamber, and high-frequency power is applied to generate plasma, and a gas phase cleaning (etching) gas molecule is generated. Is decomposed by plasma to remove the film adhered and deposited on the electrodes and the inner wall of the processing chamber. This method is very effective in improving the operation rate because it can omit additional steps such as temperature drop, release to the atmosphere, evacuation and temperature rise as compared with the conventional cleaning work. However, in particular, when gas cleaning is performed with a cleaning gas such as NF 3 or SF 6 , fluoride is generated in the processing chamber, which causes a reduction in a film forming rate, a deterioration in film thickness distribution, or a deterioration in a device thickness in the processing chamber after cleaning. This resulted in deterioration of characteristics.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記問題点に
鑑み考案されたものであり、クリーニングガス（エッチ
ングガス）に高周波電力を供給してプラズマを発生させ
てガスクリーニングを行なった後に、不活性ガスを導入
し、高周波電力を供給してプラズマを発生させることに
より、ガスクリーニングにより生成されたフッ化物を破
砕し、正規の電極表面の復生とＦ系分圧を低下させるこ
とにより、ガスクリーニング後の成膜速度の低下や膜厚
分布の劣化あるいはデバイス特性の劣化を防止して生産
歩留まりの向上を図るものである。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned problems, and after performing high-frequency power to a cleaning gas (etching gas) to generate plasma and perform gas cleaning, By introducing an inert gas and supplying high-frequency power to generate plasma, the fluoride generated by the gas cleaning is crushed, and the gas is restored by regenerating the normal electrode surface and reducing the F-system partial pressure. It is intended to improve the production yield by preventing a reduction in the film forming rate after cleaning, a deterioration in the film thickness distribution, and a deterioration in the device characteristics.
【０００６】ここで、クリーニングガス（エッチングガ
ス）によるガスクリーニング後に導入する不活性ガスと
は、ＣＶＤにおいて成膜には関与しないガスをさす。特
にアルゴンガスが有効であり、必要に応じ窒素ガスを混
合してもよい。Here, the inert gas introduced after gas cleaning with a cleaning gas (etching gas) refers to a gas that does not participate in film formation in CVD. In particular, argon gas is effective, and nitrogen gas may be mixed as necessary.
【０００７】従って、請求項１によれば、処理室内にエ
ッチングガスを導入し、高周波電力を供給してプラズマ
を発生させ、プラズマエッチングによりガスクリーニン
グを行い、その後、前記処理室内に不活性ガスを導入
し、高周波電力を供給してプラズマを発生させることを
特徴とするガスクリーニング装置が提供される。Therefore, according to the first aspect, an etching gas is introduced into the processing chamber, high-frequency power is supplied to generate plasma, gas cleaning is performed by plasma etching, and then an inert gas is introduced into the processing chamber. A gas cleaning apparatus is provided, wherein the gas cleaning apparatus is introduced and supplies high frequency power to generate plasma.
【０００８】また、請求項２によれば、前記不活性ガス
がアルゴンガスを含むことを特徴とする請求項１記載の
ガスクリーニング装置が提供される。According to a second aspect of the present invention, there is provided the gas cleaning apparatus according to the first aspect, wherein the inert gas includes an argon gas.
【０００９】また、請求項３によれば、処理室内にエッ
チングガスを導入し、高周波電力を供給してプラズマを
発生させ、プラズマエッチングによりガスクリーニング
を行う工程と、その後、前記処理室内に不活性ガスを導
入し、高周波電源を供給してプラズマを発生させる工程
と、を備えることを特徴とするガスクリーニング方法が
提供される。According to a third aspect of the present invention, an etching gas is introduced into the processing chamber, a high-frequency power is supplied to generate plasma, and gas cleaning is performed by plasma etching. Introducing a gas and supplying a high-frequency power supply to generate plasma, thereby providing a gas cleaning method.
【００１０】また、請求項４によれば、前記不活性ガス
がアルゴンガスを含むことを特徴とする請求項３記載の
ガスクリーニング方法が提供される。According to a fourth aspect of the present invention, there is provided the gas cleaning method according to the third aspect, wherein the inert gas includes an argon gas.
【００１１】[0011]
【発明の実施の形態】以下に、本発明の一実施の形態に
ついて記す。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below.
【００１２】図１は本発明に関わるガスクリーニング装
置の一実施の形態であるプラズマＣＶＤ装置１００の処
理室１の断面を示すものである。処理室１の上面に上電
極ホルダ２を設け、該上電極ホルダ２の中心に処理室１
の上面を貫通するガイドパイプ３を設ける。該ガイドパ
イプ３は上電極（カソード）５に接続されている。上電
極（カソード）５内部には間隙７が形成されており、こ
の間隙７とガイドパイプ３内部とは連通している。また
上電極（カソード）５下部には、所要数のガス供給口１
５を有するシャワープレート８が設置されている。ガイ
ドパイプ３および上電極（カソード）５と処理室１の上
面および上電極ホルダ２との間は絶縁材４で絶縁する。
シャワープレート８の下側には上下方向に分離可能に内
室１０を設け、そのさらに下側には下電極（アノード）
１１を設置する。内室１０はシャワープレート８、下電
極（アノード）１１および内室側壁９によって形成され
る。上電極（カソード）５内にはカソードヒータ６が設
けられ、下電極（アノード）１１内にはアノードヒータ
１２が設けられている。ガイドパイプ３は高周波電源２
０に接続され、下電極（アノード）１１は接地されてい
る。FIG. 1 shows a cross section of a processing chamber 1 of a plasma CVD apparatus 100 which is an embodiment of a gas cleaning apparatus according to the present invention. An upper electrode holder 2 is provided on the upper surface of the processing chamber 1, and the processing chamber 1 is provided at the center of the upper electrode holder 2.
The guide pipe 3 penetrating through the upper surface of is provided. The guide pipe 3 is connected to an upper electrode (cathode) 5. A gap 7 is formed inside the upper electrode (cathode) 5, and the gap 7 communicates with the inside of the guide pipe 3. A required number of gas supply ports 1 are provided below the upper electrode (cathode) 5.
5 is provided. The insulating material 4 insulates the guide pipe 3 and the upper electrode (cathode) 5 from the upper surface of the processing chamber 1 and the upper electrode holder 2.
An inner chamber 10 is provided below the shower plate 8 so as to be vertically separable, and a lower electrode (anode) is further below the inner chamber 10.
11 is installed. The inner chamber 10 is formed by the shower plate 8, the lower electrode (anode) 11 and the inner chamber side wall 9. A cathode heater 6 is provided in the upper electrode (cathode) 5, and an anode heater 12 is provided in the lower electrode (anode) 11. Guide pipe 3 is high frequency power supply 2
0, and the lower electrode (anode) 11 is grounded.
【００１３】反応ガスやクリーニングガス（エッチング
ガス）は、ガイドパイプ３から導入され、間隙７を通
り、シャワープレート８で分散され、内室１０内に導入
され、その後、排気管１４を介して排気される。高周波
電源２０により上電極（カソード）５と下電極（アノー
ド）１１との間に高周波が印加され、内室１０内にプラ
ズマが発生する。A reaction gas and a cleaning gas (etching gas) are introduced from the guide pipe 3, pass through the gap 7, are dispersed by the shower plate 8, are introduced into the inner chamber 10, and are then exhausted through the exhaust pipe 14. Is done. High frequency is applied between the upper electrode (cathode) 5 and the lower electrode (anode) 11 by the high frequency power supply 20, and plasma is generated in the inner chamber 10.
【００１４】成膜用の原料ガスをガイドパイプ３から導
入し、上電極（カソード）５と下電極（アノード）１１
との間に高周波電力を印加してプラズマを発生させ、プ
ラズマＣＶＤ法により、基板１３上に成膜する。この成
膜を所定回数繰り返して所定枚数の基板１３上に成膜を
行う。A source gas for film formation is introduced from a guide pipe 3, and an upper electrode (cathode) 5 and a lower electrode (anode) 11
A high-frequency power is applied between the substrates to generate plasma, and a film is formed on the substrate 13 by a plasma CVD method. This film formation is repeated a predetermined number of times to form a film on a predetermined number of substrates 13.
【００１５】その後、クリーニングガス（エッチングガ
ス）を、ガイドパイプ３から導入し、上電極（カソー
ド）５と下電極（アノード）１１との間に高周波電力を
印加してプラズマを発生させ、ガスクリーニングを行
う。Thereafter, a cleaning gas (etching gas) is introduced from the guide pipe 3, and high-frequency power is applied between the upper electrode (cathode) 5 and the lower electrode (anode) 11 to generate plasma, thereby performing gas cleaning. I do.
【００１６】その後、アルゴンガス等の不活性ガスをガ
イドパイプ３から導入し、上電極（カソード）５と下電
極（アノード）１１との間に高周波電力を印加してプラ
ズマを発生させる。このようにして次の成膜に備えて処
理室１内の前処理を行う。Thereafter, an inert gas such as an argon gas is introduced from the guide pipe 3, and high-frequency power is applied between the upper electrode (cathode) 5 and the lower electrode (anode) 11 to generate plasma. In this way, the pretreatment in the processing chamber 1 is performed in preparation for the next film formation.
【００１７】＜実施例１＞図１に示したプラズマＣＶＤ
装置１００を使用し、処理室１内にガラス基板１３を装
填して、ＳｉＮ膜２０枚（積算膜厚：４００００オング
ストローム）を連続に成膜した。次いで、処理室１内に
供給するガスをＮＦ3 に変更し、ＲＦ電力を５００Ｗと
して５分間ガスクリーニングを行った。その後、アルゴ
ンガスを３００ＳＣＣＭ、圧力０．４Ｔｏｒｒ、ＲＦ電
力を５００Ｗとして５分間処理室１内の成膜前処理を行
った。<Embodiment 1> The plasma CVD shown in FIG.
Using the apparatus 100, the glass substrate 13 was loaded into the processing chamber 1, and 20 SiN films (integrated film thickness: 40000 angstroms) were continuously formed. Next, the gas supplied into the processing chamber 1 was changed to NF 3 , and RF cleaning was performed for 5 minutes at an RF power of 500 W. Thereafter, pretreatment for film formation in the processing chamber 1 was performed for 5 minutes with an argon gas of 300 SCCM, a pressure of 0.4 Torr, and an RF power of 500 W.
【００１８】これらの操作を１サイクルとして、これを
繰り返した場合の成膜における膜厚均一性及び成膜速度
の変化を調べた。These operations were defined as one cycle, and the film thickness uniformity and the change in the film formation rate in the film formation were examined when these were repeated.
【００１９】膜厚均一性は大日本スクリーン製造製光学
式膜厚計ＬａｍｂｄａÅ（ＬＶＭ８０００−Ｓ）を用い
て基板端１０ｍｍを除く内側を均等２５分割して測定し
た。なお、膜厚均一性の算出は（１）式に依った。The film thickness uniformity was measured using an optical film thickness meter Lambda (manufactured by Dainippon Screen Mfg. Co., Ltd.) (LVM8000-S) by equally dividing the inside excluding the substrate end 10 mm into 25 parts. The uniformity of the film thickness was calculated according to the equation (1).
【００２０】[0020]
【数１】 膜厚均一性＝｛（最大膜厚−最小膜厚）／（最大膜厚＋最小膜厚）｝×１００ …（１）## EQU1 ## Film thickness uniformity = {(maximum film thickness−minimum film thickness) / (maximum film thickness + minimum film thickness)} × 100 (1)
【００２１】成膜速度は、成膜した膜をエッチング液に
より剥離し、膜厚段差を、テンコール社製形状測定器
（ＦＰ−２）で得られた膜厚を成膜時間で除して求め
た。The film formation rate is determined by removing the formed film with an etchant, and dividing the film thickness step by the film formation time obtained by dividing the film thickness obtained with a Tencor Corp. shape measuring instrument (FP-2). Was.
【００２２】＜比較例１＞実施例１において、ガスクリ
ーニング後のアルゴンガスを利用した成膜前処理を省略
した以外は、実施例１と同様にして連続成膜及びガスク
リーニングを行った。<Comparative Example 1> Continuous film formation and gas cleaning were performed in the same manner as in Example 1 except that the pretreatment for film formation using argon gas after gas cleaning was omitted.
【００２３】次に、本発明によるガスクリーニング後の
不活性ガスによるプラズマ処理が成膜に及ぼす効果の比
較を示す。図２は積算膜厚と成膜速度との関係を実施例
１と比較例１の両方について示したものであり、図３は
積算膜厚と膜厚均一性との関係を実施例１と比較例１の
両方について示したものである。これらより明らかなよ
うに、上記実施例１においては、ガスクリーニング後の
成膜速度の低下や膜厚分布の劣化を防止できている。Next, a comparison of the effect of plasma treatment with an inert gas after gas cleaning on film formation according to the present invention will be described. FIG. 2 shows the relationship between the integrated film thickness and the film forming rate for both Example 1 and Comparative Example 1, and FIG. 3 shows the relationship between the integrated film thickness and the film thickness uniformity compared to Example 1. This is shown for both of Examples 1. As is apparent from the above, in the first embodiment, it is possible to prevent a decrease in the film forming rate after the gas cleaning and a deterioration in the film thickness distribution.
【００２４】[0024]
【発明の効果】本発明によれば、クリーニングガス（エ
ッチングガス）を用いてプラズマを発生させてガスクリ
ーニングを行い、そのガスクリーニング後に不活性ガス
を導入し高周波電力を供給してプラズマを発生させるこ
とにより、ガスクリーニング後の成膜速度の低下や膜厚
分布の劣化を防止して、生産歩留まりの向上を図ること
ができる。According to the present invention, plasma cleaning is performed by generating plasma using a cleaning gas (etching gas), and after the gas cleaning, an inert gas is introduced and high-frequency power is supplied to generate plasma. As a result, it is possible to prevent a reduction in the film formation rate and a deterioration in the film thickness distribution after the gas cleaning, and to improve the production yield.
【図１】本発明のガスクリーニング装置の一実施の形態
であるプラズマＣＶＤ装置１００の模式的断面図であ
る。FIG. 1 is a schematic sectional view of a plasma CVD apparatus 100 as an embodiment of a gas cleaning apparatus of the present invention.
【図２】積算膜厚と成膜速度との関係を実施例１と比較
例１の両方について示した図である。FIG. 2 is a diagram showing a relationship between an integrated film thickness and a film forming rate for both Example 1 and Comparative Example 1.
【図３】積算膜厚と膜厚均一性との関係を実施例１と比
較例１の両方について示した図である。FIG. 3 is a diagram showing the relationship between the integrated film thickness and the film thickness uniformity for both Example 1 and Comparative Example 1.
１…処理室 ２…上電極ホルダ ３…ガイドパイプ ４…絶縁材 ５…上電極（カソード） ６…カソードヒータ ７…間隙 ８…シャワープレート ９…内室側壁 １０…内室 １１…下電極（アノード） １２…アノードヒータ １３…基板 DESCRIPTION OF SYMBOLS 1 ... Processing chamber 2 ... Upper electrode holder 3 ... Guide pipe 4 ... Insulating material 5 ... Upper electrode (cathode) 6 ... Cathode heater 7 ... Gap 8 ... Shower plate 9 ... Inner chamber side wall 10 ... Inner chamber 11 ... Lower electrode (anode) 12) Anode heater 13 ... Substrate
Claims (4)
波電力を供給してプラズマを発生させ、プラズマエッチ
ングによりガスクリーニングを行い、その後、前記処理
室内に不活性ガスを導入し、高周波電力を供給してプラ
ズマを発生させることを特徴とするガスクリーニング装
置。An etching gas is introduced into a processing chamber, high-frequency power is supplied to generate plasma, gas cleaning is performed by plasma etching, and then an inert gas is introduced into the processing chamber to supply high-frequency power. A gas cleaning apparatus characterized in that plasma is generated by performing a plasma cleaning.
を特徴とする請求項１記載のガスクリーニング装置。2. The gas cleaning apparatus according to claim 1, wherein said inert gas includes argon gas.
波電力を供給してプラズマを発生させ、プラズマエッチ
ングによりガスクリーニングを行う工程と、 その後、前記処理室内に不活性ガスを導入し、高周波電
力を供給してプラズマを発生させる工程と、 を備えることを特徴とするガスクリーニング方法。3. A process of introducing an etching gas into the processing chamber, supplying high-frequency power to generate plasma, and performing gas cleaning by plasma etching; and thereafter, introducing an inert gas into the processing chamber. Supplying gas to generate plasma.
を特徴とする請求項３記載のガスクリーニング方法。4. The gas cleaning method according to claim 3, wherein said inert gas includes argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29155497A JPH11111699A (en) | 1997-10-07 | 1997-10-07 | Gas cleaning device and gas cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29155497A JPH11111699A (en) | 1997-10-07 | 1997-10-07 | Gas cleaning device and gas cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11111699A true JPH11111699A (en) | 1999-04-23 |
Family
ID=17770427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29155497A Withdrawn JPH11111699A (en) | 1997-10-07 | 1997-10-07 | Gas cleaning device and gas cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11111699A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100346524B1 (en) * | 2000-10-14 | 2002-07-26 | 나기창 | Apparatus for cleaning semiconductor wafer by means of plasma |
| WO2020122259A1 (en) * | 2019-02-04 | 2020-06-18 | 株式会社日立ハイテク | Plasma processing method and plasma processing device |
-
1997
- 1997-10-07 JP JP29155497A patent/JPH11111699A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100346524B1 (en) * | 2000-10-14 | 2002-07-26 | 나기창 | Apparatus for cleaning semiconductor wafer by means of plasma |
| WO2020122259A1 (en) * | 2019-02-04 | 2020-06-18 | 株式会社日立ハイテク | Plasma processing method and plasma processing device |
| KR20200096753A (en) * | 2019-02-04 | 2020-08-13 | 주식회사 히타치하이테크 | Plasma treatment method and plasma treatment device |
| CN111801775A (en) * | 2019-02-04 | 2020-10-20 | 株式会社日立高新技术 | Plasma processing method and plasma processing apparatus |
| JPWO2020122259A1 (en) * | 2019-02-04 | 2021-02-15 | 株式会社日立ハイテク | Plasma processing method and plasma processing equipment |
| US11462416B2 (en) | 2019-02-04 | 2022-10-04 | Hitachi High-Tech Corporation | Plasma processing method and plasma processing apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5686999B2 (en) | Improved chamber cleaning method and apparatus | |
| US7226869B2 (en) | Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing | |
| US5454903A (en) | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization | |
| US20210140044A1 (en) | Film forming method and film forming apparatus | |
| US6071797A (en) | Method for forming amorphous carbon thin film by plasma chemical vapor deposition | |
| US20070131171A1 (en) | Plasma process device and plasma process method | |
| EP1827871B1 (en) | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses | |
| JP2002033289A (en) | Cleaning method for semiconductor process chamber | |
| TW200823977A (en) | Plasma doping method and plasma doping apparatus | |
| JP2749630B2 (en) | Plasma surface treatment method | |
| JP3112880B2 (en) | Cleaning method for CVD equipment | |
| TW307027B (en) | Process for reducing circuit damage during pecvd in single wafer pecvd system | |
| JPH10242130A (en) | Plasma processing method and apparatus | |
| KR20010104260A (en) | Gas reactions to eliminate contaminates in a cvd chamber | |
| US6465363B1 (en) | Vacuum processing method and vacuum processing apparatus | |
| JPH11111699A (en) | Gas cleaning device and gas cleaning method | |
| JP2004214609A (en) | Processing method of plasma processing apparatus | |
| JPH10147877A (en) | Gas cleaning method | |
| JPH08330278A (en) | Surface treatment method and surface treatment apparatus | |
| JP2691018B2 (en) | Plasma etching method | |
| KR20010106232A (en) | Methods for improving chemical vapor deposition processing | |
| JP2001011641A (en) | Film forming method | |
| JP2003068705A (en) | Method for manufacturing semiconductor device | |
| JPH0849080A (en) | Gas cleaning method in plasma CVD apparatus | |
| JP2004273991A (en) | Semiconductor manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20041207 |