JPH11112109A5 - - Google Patents

Info

Publication number
JPH11112109A5
JPH11112109A5 JP1998227609A JP22760998A JPH11112109A5 JP H11112109 A5 JPH11112109 A5 JP H11112109A5 JP 1998227609 A JP1998227609 A JP 1998227609A JP 22760998 A JP22760998 A JP 22760998A JP H11112109 A5 JPH11112109 A5 JP H11112109A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
undoped
emitting device
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998227609A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11112109A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP22760998A priority Critical patent/JPH11112109A/ja
Priority claimed from JP22760998A external-priority patent/JPH11112109A/ja
Publication of JPH11112109A publication Critical patent/JPH11112109A/ja
Publication of JPH11112109A5 publication Critical patent/JPH11112109A5/ja
Pending legal-status Critical Current

Links

JP22760998A 1997-07-25 1998-07-27 窒化物半導体発光素子 Pending JPH11112109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19947197 1997-07-25
JP9-199471 1997-11-06
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPH11112109A JPH11112109A (ja) 1999-04-23
JPH11112109A5 true JPH11112109A5 (fr) 2005-10-27

Family

ID=26511555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22760998A Pending JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JPH11112109A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
KR20030083820A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
KR100489039B1 (ko) * 2002-08-19 2005-05-11 엘지이노텍 주식회사 질화 갈륨계 반도체 발광 다이오드 제조방법
WO2008041648A1 (fr) * 2006-09-29 2008-04-10 Panasonic Corporation Dispositif d'émission de lumière laser et dispositif d'affichage d'image utilisant celui-ci
US9620671B2 (en) 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
CN110364603B (zh) * 2019-07-18 2024-09-27 佛山市国星半导体技术有限公司 一种抗静电的外延结构及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3509260B2 (ja) * 1994-03-08 2004-03-22 住友化学工業株式会社 ３−５族化合物半導体と発光素子
JP3761935B2 (ja) * 1994-09-19 2006-03-29 株式会社東芝 化合物半導体装置
JP3598591B2 (ja) * 1995-07-17 2004-12-08 住友化学工業株式会社 ３−５族化合物半導体の製造方法
JP3752739B2 (ja) * 1996-03-22 2006-03-08 住友化学株式会社 発光素子
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JPH10163523A (ja) * 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法および発光素子

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