JPH11150053A5 - - Google Patents

Info

Publication number
JPH11150053A5
JPH11150053A5 JP1997316921A JP31692197A JPH11150053A5 JP H11150053 A5 JPH11150053 A5 JP H11150053A5 JP 1997316921 A JP1997316921 A JP 1997316921A JP 31692197 A JP31692197 A JP 31692197A JP H11150053 A5 JPH11150053 A5 JP H11150053A5
Authority
JP
Japan
Prior art keywords
exposure
conditions
optical system
projection optical
exposure conditions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1997316921A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11150053A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9316921A priority Critical patent/JPH11150053A/ja
Priority claimed from JP9316921A external-priority patent/JPH11150053A/ja
Priority to AU11734/99A priority patent/AU1173499A/en
Priority to PCT/JP1998/005184 priority patent/WO1999026279A1/ja
Publication of JPH11150053A publication Critical patent/JPH11150053A/ja
Publication of JPH11150053A5 publication Critical patent/JPH11150053A5/ja
Withdrawn legal-status Critical Current

Links

JP9316921A 1997-11-18 1997-11-18 露光方法及び装置 Withdrawn JPH11150053A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9316921A JPH11150053A (ja) 1997-11-18 1997-11-18 露光方法及び装置
AU11734/99A AU1173499A (en) 1997-11-18 1998-11-18 Exposure method and aligner
PCT/JP1998/005184 WO1999026279A1 (fr) 1997-11-18 1998-11-18 Procede d'exposition et graveur a projection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9316921A JPH11150053A (ja) 1997-11-18 1997-11-18 露光方法及び装置

Publications (2)

Publication Number Publication Date
JPH11150053A JPH11150053A (ja) 1999-06-02
JPH11150053A5 true JPH11150053A5 (2) 2005-07-14

Family

ID=18082410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9316921A Withdrawn JPH11150053A (ja) 1997-11-18 1997-11-18 露光方法及び装置

Country Status (3)

Country Link
JP (1) JPH11150053A (2)
AU (1) AU1173499A (2)
WO (1) WO1999026279A1 (2)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4586954B2 (ja) * 2003-04-04 2010-11-24 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4684563B2 (ja) * 2004-02-26 2011-05-18 キヤノン株式会社 露光装置及び方法
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5006762B2 (ja) * 2007-11-05 2012-08-22 キヤノン株式会社 露光装置及びデバイス製造方法
US8612045B2 (en) 2008-12-24 2013-12-17 Asml Holding N.V. Optimization method and a lithographic cell
DE102011113521A1 (de) * 2011-09-15 2013-01-03 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
JP7213757B2 (ja) * 2019-05-31 2023-01-27 キヤノン株式会社 露光装置、および物品製造方法
JP2023178029A (ja) 2022-06-03 2023-12-14 キヤノン株式会社 決定方法、露光方法、情報処理装置、プログラム、露光装置、および物品製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3395280B2 (ja) * 1993-09-21 2003-04-07 株式会社ニコン 投影露光装置及び方法
JP3555233B2 (ja) * 1995-04-13 2004-08-18 株式会社ニコン 投影露光装置

Similar Documents

Publication Publication Date Title
TWI245976B (en) Adaptive lithographic critical dimension enhancement
KR20010023094A (ko) 층을 형성하기 위한 다중 이미지 레티클
CN107003618B (zh) 光刻方法和设备
JP2001068398A5 (2)
US4173673A (en) Dot-etchable masks from photopolymerizable elements
JPH11150053A5 (2)
CN101556438A (zh) 光刻设备和器件制造方法
US4229517A (en) Dot-etchable photopolymerizable elements
JP2000036451A5 (2)
CA1079565A (en) Dot-etchable photopolymerizable elements and image reproduction process
JPH03133119A (ja) 半導体ウェハー用写真製版装置および方法
JP2765422B2 (ja) 露光装置及びそれを用いた半導体素子の製造方法
JPH09320945A5 (2)
US6597440B1 (en) Wavefront measuring method and projection exposure apparatus
TWI241466B (en) Photomask designing method, pattern predicting method and computer program product
JPH0594015A (ja) 感光性印刷用エレメント
JP2005510755A5 (2)
US4343876A (en) Dot-enlargement process for photopolymer litho masks
US20010050761A1 (en) Exposure method and exposure apparatus
EP0130581B1 (en) Enlargement of photopolymer images in photopolymer mask
US5716738A (en) Dark rims for attenuated phase shift mask
JPS59155839A (ja) パタ−ン転写用マスク
US20040101769A1 (en) Method for adjusting the overlay of two mask planes in a photolithographic process for the production of an integrated circuit
JPH09306818A5 (2)
JP2974756B2 (ja) レジストパターンの形成方法及びその装置