JPH1116841A - 半導体製造装置のガス供給方法 - Google Patents

半導体製造装置のガス供給方法

Info

Publication number: JPH1116841A
Authority: JP; Japan
Prior art keywords: gas; gas supply; clf; valve; reaction chamber
Prior art date: 1997-06-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP16860397A

Other languages

English (en)

Japanese (ja)

Other versions

JPH1116841A5 (2

Inventor

Toshiya Shimada

敏也嶋田

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Kokusai Denki Electric Inc

Original Assignee

Kokusai Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-06-25

Filing date

1997-06-25

Publication date

1999-01-22

1997-06-25 Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd

1997-06-25 Priority to JP16860397A priority Critical patent/JPH1116841A/ja

1999-01-22 Publication of JPH1116841A publication Critical patent/JPH1116841A/ja

2005-02-24 Publication of JPH1116841A5 publication Critical patent/JPH1116841A5/ja

Status Pending legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 66
239000004065 semiconductor Substances 0.000 title claims abstract description 16
238000004519 manufacturing process Methods 0.000 title claims abstract description 8
238000004140 cleaning Methods 0.000 claims abstract description 15
238000006243 chemical reaction Methods 0.000 claims description 34
239000007789 gas Substances 0.000 description 108
238000005260 corrosion Methods 0.000 description 2
230000007797 corrosion Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000003672 processing method Methods 0.000 description 2
235000012431 wafers Nutrition 0.000 description 2
238000006073 displacement reaction Methods 0.000 description 1
230000003028 elevating effect Effects 0.000 description 1
229910000856 hastalloy Inorganic materials 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1

Landscapes

Chemical Vapour Deposition (AREA)

JP16860397A 1997-06-25 1997-06-25 半導体製造装置のガス供給方法 Pending JPH1116841A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP16860397A JPH1116841A (ja)	1997-06-25	1997-06-25	半導体製造装置のガス供給方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP16860397A JPH1116841A (ja)	1997-06-25	1997-06-25	半導体製造装置のガス供給方法

Publications (2)

Publication Number	Publication Date
JPH1116841A true JPH1116841A (ja)	1999-01-22
JPH1116841A5 JPH1116841A5 (2)	2005-02-24

Family

ID=15871129

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP16860397A Pending JPH1116841A (ja)	1997-06-25	1997-06-25	半導体製造装置のガス供給方法

Country Status (1)

Country	Link
JP (1)	JPH1116841A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN111916328A (zh) *	2019-05-10	2020-11-10	北京北方华创微电子装备有限公司	流路互锁结构、进气装置及半导体加工设备

1997
- 1997-06-25 JP JP16860397A patent/JPH1116841A/ja active Pending

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN111916328A (zh) *	2019-05-10	2020-11-10	北京北方华创微电子装备有限公司	流路互锁结构、进气装置及半导体加工设备
CN111916328B (zh) *	2019-05-10	2024-02-27	北京北方华创微电子装备有限公司	流路互锁结构、进气装置及半导体加工设备

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Legal Events

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2004-03-25	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040324
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2004-04-15	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040414
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