JPH11190858A - Active matrix display device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To prevent line-shaped pixel defects. A contact hole for exposing a data line is provided in an insulating film covering the data line. Data line 2
When a disconnection occurs, a conductive film 5 is formed over two contact holes 5a sandwiching the disconnection. As a result, the signal voltage is supplied to the pixel electrode ahead of the disconnection point via the conductive film 5. If a leak occurs at the intersection between the gate line 1 and the data line 2, the data lines 2
And two contact holes 5a sandwiching the leak portion
The conductive film 5 is formed over the entire surface. As a result, the signal voltage is supplied to the pixel electrode ahead of the leak location via the conductive film 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an active matrix type display device used as a display screen of an OA device, a television set, a light valve of a projector, and the like, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a display device such as a liquid crystal display device or a plasma display device includes a plurality of pixel electrodes arranged in a matrix and an opposing electrode arranged opposite to the pixel electrodes. In addition, a display medium such as liquid crystal or plasma is interposed between the two electrodes.

In such a display device, a drive signal is selectively applied to the pixel electrode, and a display medium is optically modulated by a voltage applied between the selected pixel electrode and a counter electrode. Thereby, the display pattern is displayed on the screen.

[0004] As a driving method of such a display device, an active matrix driving method is known. In an active matrix display device using this driving method, a switching element is connected to each of the pixel electrodes arranged in a matrix, and a driving signal is selectively supplied to each pixel electrode via the switching element.

[0005] Generally, as the switching element,
A TFT (thin film transistor) element, a MIM (metal-insulating film-metal) element and the like are known.

In the active matrix display device, one of bus lines such as signal wiring and scanning wiring is formed on one of a pair of substrates opposed to each other with a display medium interposed therebetween in the same layer as the pixel electrodes. Many are formed, and in this case, the pixel electrode and the bus line in the same layer are arranged so as not to contact each other.

On the other hand, there has also been proposed a configuration in which an insulating film is provided so as to cover the signal wiring and the scanning wiring, and a pixel electrode is formed on the insulating film, so that the pixel electrode and the bus line are formed in different layers ( JP-A-61-156025, etc.).

FIG. 16 is a plan view showing the structure of one pixel of a wiring board in the proposed active matrix type display device. In this wiring substrate, a scanning wiring 52 and a signal wiring 53 are provided to cross each other, and a pixel electrode 51 is provided on an insulating film (not shown) covering them. The pixel electrode 51 has a contact hole 5 provided in the insulating film.
1b, it is connected to the drain electrode 62 of the TFT 55. By forming the pixel electrode 51 on the insulating film covering the bus line (the scanning wiring 52 and the signal wiring 53), the pixel electrode 51 and the bus line are formed in different layers, and the area of the pixel electrode 51 is increased. Thus, the aperture ratio can be increased.

In the wiring board of FIG. 16, a Cs line 59 common to each pixel is provided in parallel with the scanning wiring 52 and alternately with the scanning wiring 52, and a gate insulating film (not shown) is formed thereon. ) Through which the Cs electrode 56 is formed.
It has a Common configuration. The Cs electrode 56 is connected to the pixel electrode 5 through the contact hole 51a of the insulating film.
1 and the storage capacitor is composed of a superposed portion of the Cs line 52, the gate insulating film and the Cs electrode 56.

Incidentally, in such an active matrix type display device, disconnection of a bus line caused by a manufacturing defect always poses a problem.

In order to reduce such a problem caused by the disconnection of the bus line, SID'95 DIGEST of TE is used.
CHNICAL PAPERS 4: AMLCDs4.
3; “High-Aperture and Faul
t-Tolerant Pixel Structure
For es for TFT-LCDs, a configuration in which two bus lines are provided for one pixel electrode in an active matrix type liquid crystal display device is proposed.

In order to reduce the problem caused by the disconnection failure of the bus lines, a configuration in which two bus lines are provided for one pixel electrode in an active matrix type liquid crystal display device has been proposed (SID'95 DIGEST o).
f TECHNICAL PAPERS 4: AMLC
Ds4.3; "High-Aperture and F
ault-Tolerant Pixel Struc
Tures for TFT-LCDs ").

FIG. 17 is a plan view showing a configuration of a wiring board in the liquid crystal display device of the proposal. This wiring board includes two scanning wirings 52, 5 for each pixel electrode 51.
2 'is provided. The scanning lines 52, 52 'are short-circuited by short-circuit lines 54, 54' arranged on both sides of the pixel electrode 51 along the signal lines 53, 53 '. Each of the short-circuit lines 54 and 54 'overlaps with the pixel electrode 51 via an insulating film (not shown), and the overlapping portion serves as an auxiliary capacitance.

In a liquid crystal display device using such a wiring substrate, a TFT 55 connected to a pixel electrode adjacent to the illustrated pixel electrode 51 (here, a pixel electrode (not illustrated) disposed on the pixel electrode 51). Are driven by the two scanning lines 52 and 52 ′, so that the two scanning lines 5
Even if one of the lines 2 and 52 'is disconnected, a scanning voltage can be applied to the TFT 55 via the short-circuit lines 54 and 54'. Further, in this liquid crystal display device, since the short-circuit lines 54 and 54 ′ are provided on the active matrix substrate side so as to partially overlap the pixel electrodes 51, light is prevented from leaking from between the adjacent pixel electrodes 51. In general, the short-circuit lines 54 and 54 'function as a part of the light-shielding pattern formed on the counter substrate side, and a part of the light-shielding pattern can be omitted.

As another structure in which the scanning wiring is duplicated, a wiring board as shown in FIG. 18 has been proposed.
In this wiring board, the scanning wirings 52 and the spare scanning wirings 32 are arranged in parallel and alternately at a fixed interval, and both are connected by a short-circuit line 32a. According to this configuration, even if the scanning wiring 52 is disconnected, the scanning voltage is maintained at the spare scanning wiring 32.
Can be bypassed and the scanning voltage can be applied to the portion of the scanning wiring 52 that is ahead of the disconnecting location.

As a structure in which signal wiring is duplicated, wiring boards as shown in FIGS. 19 and 20 have been proposed. FIG. 19 is a plan view showing the configuration of the wiring board.
FIG. 20 is a plan view showing one pixel. In this wiring board, the signal wiring 53 and the spare signal wiring 105 are arranged in parallel and alternately at a fixed interval, and both of them are short-circuit lines 1.
05a. According to this configuration, even if the signal line 53 is disconnected, the signal voltage can bypass the disconnected portion through the spare signal line 105, so that the signal voltage is applied to the signal line 53 prior to the disconnected portion. can do.

In addition to the method of suppressing the occurrence of the disconnection of the signal wiring and the scanning wiring, the following method of correcting the disconnection of the scanning wiring and the signal wiring has been proposed.

For example, FIG. 21 shows a method disclosed in Japanese Unexamined Patent Publication No. Hei 8-203898, entitled "Method and Apparatus for Correcting Wiring of Electronic Circuit Board and Electronic Circuit Board". Here, an organic solution 43 of a metal material is directly applied on the portions 42 and 42 'on both sides of the disconnection portion of the wiring, and the conductive film 43' is formed by irradiating a laser beam and heating. In FIG. 21, reference numeral 41 denotes a substrate, and reference numeral 44 denotes a laser beam.

FIG. 22 shows a method disclosed in Japanese Unexamined Patent Publication No. 5-88191 entitled "Repair Device Using Laser and Method for Opening Passivation Layer". Here, by removing the passivation film covering the disconnected signal wiring with the laser light 30 ′, openings 140 and 142 are provided on both sides of the disconnected portion, and an organic solution 144 containing a metal material is applied thereon, The conductive film 144 'is formed by irradiation with laser light and heating. In addition,
In FIG. 22, reference numeral 90 denotes a discharge port of the organic solution 144;
Is a laser beam.

[0020]

In recent years, however, the bus line width has been reduced to the limit in order to achieve a higher aperture ratio and higher definition of the display device, while the intersection of the bus lines has been reduced. Due to the increase, the frequency of occurrence of a disconnection failure of a bus line, a leakage failure at an intersection of bus lines, and the like tends to increase as compared with the related art.

When such a disconnection defect or a leak defect occurs, a normal voltage is not applied to the pixel electrode from the bus line via the switching element, so that it is displayed as a line defect. Since this line-shaped defect is a fatal defect for a display device, the display device in which this defect has occurred is discarded as a defective product. As a result, there arises a problem that a non-defective product ratio of the display device is reduced and a manufacturing cost is increased.

In the above-described conventional technology in which two bus lines are provided for one pixel electrode, when applied to a structure in which a bus line is provided in the same layer as a pixel electrode, which is a general configuration, the same configuration as the pixel electrode is applied. Since the pixel electrodes are arranged so as not to be in contact with the bus lines of the layers, the pixel electrodes cannot be made large, which hinders an increase in the aperture ratio. Furthermore, in order to increase the aperture ratio even slightly even within this limitation, it is necessary to narrow the interval between the two bus lines, and a leak failure between the bus lines is likely to occur.

In the conventional technique of repairing a defect by locally forming a conductive film at a broken portion of a wiring as described above, the conductive film is prevented from coming into contact with another conductive film pattern to prevent a leak failure. It is necessary to control the shape of the conductive film, which complicates the defect repair process and apparatus.

Further, the passivation film covering the broken wiring is removed with a laser beam or the like to form openings at at least two places, and a metal organic solution is applied on the passivation film so as to cover the openings. In the related art in which a conductive film is formed by irradiating light or the like, it is necessary to selectively remove only the passivation film when providing an opening in the passivation film so as not to damage the underlying wiring. For this purpose, it is necessary to control the laser irradiation device at a high level, and there remains a problem with respect to the reliability of defect repair.

The present invention has been made to solve such problems of the prior art, and it is possible to highly reliably correct a linear pixel defect without requiring a complicated process or apparatus. An object of the present invention is to provide an active matrix display device and a method for manufacturing the same.

[0026]

An active matrix display device according to the present invention comprises a plurality of pixel electrodes arranged in a matrix and switching elements connected to each pixel electrode, and applies a scanning voltage to the switching elements. In an active matrix display device in which a scanning line for applying a signal voltage to the switching element and a signal line for providing the switching element intersect with each other, the scanning line covers at least one of the scanning line and the signal line, and An insulating film provided with contact holes for exposing the wiring at two or more portions, and two insulating film portions sandwiching a disconnection defective portion of at least one of the wirings or a leak defective portion at an intersection of the two wirings on the insulating film; The conductive film is provided over the contact hole, thereby achieving the above object.

A method of manufacturing an active matrix display device according to the present invention includes a plurality of pixel electrodes arranged in a matrix and switching elements connected to each pixel electrode, and a scanning for applying a scanning voltage to the switching elements. In a method for manufacturing an active matrix display device in which a wiring and a signal wiring for applying a signal voltage to the switching element are provided so as to cross each other, an insulating film covering at least one of the scanning wiring and the signal wiring may be formed. ,
Forming two or more contact holes for exposing the wiring covered with the insulating film; and, if the corresponding wiring has a disconnection defect, extending over the two contact holes sandwiching the defective portion. And a step of forming a conductive film on the substrate, whereby the object is achieved.

A method of manufacturing an active matrix type display device according to the present invention includes a plurality of pixel electrodes arranged in a matrix and switching elements connected to each pixel electrode, and a scan for applying a scanning voltage to the switching elements. In a method for manufacturing an active matrix display device in which a wiring and a signal wiring for applying a signal voltage to the switching element are provided so as to cross each other, an insulating film covering at least one of the scanning wiring and the signal wiring may be formed. ,
A step of forming two or more contact holes exposing the wiring covered with the insulating film, and a step of cutting the relevant wiring on both sides of the defective part when a leak failure occurs at the intersection of both wirings And a step of forming a conductive film on the insulating film over the two contact holes sandwiching the cut portion, whereby the object is achieved.

At least one of the scanning wiring and the signal wiring is extended to both outer sides of the display area where the pixel electrode is provided, and the contact holes are provided one at each end of the corresponding wiring. It may be formed.

[0030] The contact holes may be formed one by one at predetermined intervals from intersections of the scanning lines and the signal lines.

An organic insulating film may be formed as an insulating film covering the signal wiring, and the pixel electrode may be formed on the insulating film.

The conductive film and the pixel electrode may be simultaneously patterned on the organic insulating film using the same material.

A second insulating film may be formed so as to cover the conductive film, and the pixel electrode may be formed on the second insulating film.

An organic insulating film may be formed as at least one of the insulating film and the second insulating film.

The conductive film may be formed by supplying an organic solution containing a metal material and heating the insulating film over the insulating film over the two contact holes.

As the metal material of the organic solution, a metal complex may be used, or at least one kind of fine metal particles of Au, Ag, Pd and Al may be used.

The operation of the present invention will be described below.

In the present invention, two or more contact holes for exposing the wiring are provided in the insulating film provided so as to cover at least one of the scanning wiring and the signal wiring. When a disconnection failure occurs in the wiring, a conductive film is provided on the insulating film over two contact holes sandwiching the defective portion. With this conductive film,
The wiring having the defect is connected on both sides of the defective portion via two contact holes, and the signal voltage or the scanning voltage bypasses the defective portion through the conductive film. As a result, the scanning voltage can be supplied to the scanning wiring portion ahead of the disconnection defective portion, so that the scanning voltage can be applied to all the pixel electrodes arranged along the scanning wiring. Further, since the signal voltage can be supplied to the signal wiring portion ahead of the disconnection defective portion, it is possible to apply the signal voltage to all the pixel electrodes arranged along the signal wiring.

Further, according to the present invention, when a leak failure occurs at the intersection between the scanning wiring and the signal wiring, at least one of the scanning wiring and the signal wiring is disposed on both sides of the leak defective part. Disconnect. Then, a conductive film is provided on the insulating film over the two contact holes sandwiching the cut portion. When the signal wiring is cut on both sides of the portion where the leak failure has occurred, no signal voltage is applied to the signal wiring, so that a leak failure between the scanning wiring and the signal wiring does not occur. Further, this conductive film allows the cut wiring to be 2.
The connection is made on both sides of the cut portion via one contact hole, and the signal voltage or the scanning voltage bypasses the defective portion through the conductive film. As a result, even when the scanning wiring is cut, the scanning voltage can be supplied to the scanning wiring portion ahead of the cut portion, so that the scanning voltage is applied to all the pixel electrodes arranged along the scanning wiring. It is possible. Further, even if the signal wiring is cut, a signal voltage can be supplied to a signal wiring portion ahead of the defective cutting portion, so that the signal voltage is applied to all the pixel electrodes arranged along the signal wiring. It is possible.

The contact holes of the insulating film may be provided only one at both ends of the scanning wiring or the signal wiring. In this case, since the contact hole can be arranged outside the display region where the pixel electrode is not provided, the area of the contact hole is increased to increase the connection area between the scanning wiring and the conductive film or the connection area between the signal wiring and the conductive film. can do. Therefore,
The connection resistance can be kept low and the connection reliability can be improved. Further, by providing the conductive film so as to bypass the display area, it is possible to repair the defect if the disconnected wiring can be identified even if the disconnection location cannot be identified. Therefore, the inspection time can be shortened and the apparatus can be simplified.

The contact hole of the insulating film is
One of them may be provided at a position at a predetermined interval from each intersection of the scanning wiring and the signal wiring. In this case, the scanning wiring portion corresponding to a certain pixel electrode and the scanning wiring portion corresponding to an adjacent pixel electrode can all be connected by a conductive film, or the signal wiring portion corresponding to a certain pixel electrode and the adjacent pixel electrode Can be connected to the entire signal wiring portion by the conductive film. On the other hand, when the contact holes are formed at two or more positions from each intersection, the scanning wiring portions existing between the contact holes are not connected to the scanning wiring portions corresponding to the adjacent pixel electrodes, Alternatively, a signal wiring portion existing between each contact hole is not connected to a signal wiring portion corresponding to an adjacent pixel electrode.

By providing a pixel electrode on the insulating film covering the signal wiring and partially overlapping the scanning wiring and the signal wiring, the aperture ratio of the display device can be increased. Here, when an organic insulating film is used, since the organic insulating film generally has a low dielectric constant, the capacitance between the pixel electrode and the signal wiring can be reduced, and the scanning wiring formed below the signal wiring is formed. The capacitance between the pixel electrode and the pixel electrode can also be reduced.

By the way, when forming the signal wiring on the insulating film covering the scanning wiring, the formation of the insulating film, the peeling of the insulating film, and the foreign matter mixed before or during the formation of the insulating film are sharp. Irregularities may occur, which may break the signal wiring. Therefore, when an organic insulating film is provided as an insulating film covering the scanning wiring and the signal wiring and a conductive film is formed thereover, the organic insulating film can be generally planarized, so that disconnection of the conductive film hardly occurs. Further, by simultaneously patterning the pixel electrode and the conductive film using the same material, the manufacturing cost can be reduced.

The pixel electrode may be provided on a second insulating film covering the conductive film. In this case, since the pixel electrode and the conductive film are formed in different layers, leakage between the pixel electrode and the conductive film is extremely unlikely to occur. In addition, by covering the contact hole and the conductive film provided for defect correction with the second insulating film, the wiring and the conductive film exposed at the contact hole can be protected, and the reliability of the repair is dramatically increased. To improve.

Further, when at least one of the insulating film and the second insulating film covering the scanning wiring and the signal wiring is an organic insulating film, the insulating film can be planarized. Can be reduced.

The above conductive film can be formed by supplying an organic solution containing a metal material onto the insulating film over the two contact holes and heating.

For example, by using an organic solution containing a metal complex, a bypass can be easily formed in the atmosphere, unlike sputtering or CVD in which a thin film is formed in a vacuum.

Further, by using an organic solution containing at least one kind of metal fine particles of Au, Ag, Pd and Al, it is possible to reduce the resistance of the conductive film and to suppress an increase in wiring resistance due to correction.

[0049]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1A shows an active matrix type liquid crystal display device of Embodiment 1 (hereinafter, referred to as a liquid crystal display device in each embodiment) sandwiching a display medium (here, a liquid crystal layer). FIG. 1 is a plan view showing a configuration of one of a pair of wiring boards arranged to face each other in FIG.
FIG. 2B is an enlarged view of the TFT portion, and FIG.
It is an enlarged view for a pixel. FIG. 3 (a) is a sectional view of FIG.
FIG. 3B is an enlarged view of the contact hole portion, and FIG. 4 is a cross-sectional view of the TFT portion.

As shown in FIGS. 1 and 2, this liquid crystal display device has a plurality of gate lines 1 as scanning wirings and a plurality of gate lines 1 as signal wirings on a transparent insulating substrate 8 such as glass. The data line 2 and a plurality of auxiliary capacitance lines (hereinafter, referred to as Cs lines) 3 are provided in parallel with each other with a predetermined interval.

Here, the data lines 2 are provided alternately (in this case, orthogonally) with the gate lines 1, and the Cs lines 3 are arranged in parallel and alternately with the gate lines 1 in common to all the pixels.

A TFT (hereinafter, referred to as a TFT) 6 as a switching element is provided near the intersection of the gate line 1 and the data line 2. As shown in FIG. 4, the TFT 6 has a semiconductor layer 6a, and the semiconductor layer 6a is formed on the gate line 1 via a gate insulating film 9. The central portion of the semiconductor layer 6a is a channel region, one end of which is connected to the lower data electrode 17 and the data electrode 15 branched from the data line 2 via the semiconductor contact layer 14, and the other end thereof. Is connected to the lower drain electrode 16 and the drain electrode 7 via the semiconductor contact layer 14.

The data line 2 is shown in FIGS. 3 (a) and 3 (b).
As shown in FIG.
Is provided with a contact hole 5 a for each pixel electrode 4 on the data line 2. This contact hole 5a is covered with a second insulating film (interlayer insulating film) 13, and partially overlaps with the adjacent gate lines 1, 1 and the adjacent source lines 2, 2 via the interlayer insulating film 13. Pixel electrode 4 is provided.

The drain electrode 7 extends below the pixel electrode 4 and is connected to the pixel electrode 4 via a contact hole 4a provided in the insulating film 12.

The same number of Cs lines 3 as the gate lines 1 are alternately arranged on the substrate 8 one by one, and are provided in the same layer as the gate lines 1 as shown in FIG. On the Cs line 3, one auxiliary capacitance electrode (hereinafter, referred to as Cs electrode) 10 is formed per pixel via a gate insulating film 9. The Cs electrode 10 includes an insulating film 12 and an interlayer insulating film 1
3 is connected to the pixel electrode 4 via a contact hole 4 b provided in the pixel 3.

The Cs electrode 1 is formed on the gate insulating film 9.
On both sides of 0, lower-layer data lines 11 and data lines 2 as signal lines are provided to intersect with the gate lines 1.

These are covered with the insulating film 12, and when a disconnection occurs in the data line 2, the conductive film 5 is provided on the insulating film 12 over the contact holes 5a on both sides of the disconnection. . Thereby, the conductive film 5 is connected to the data line 2 via the contact holes 5a, 5a,
Both sides of the disconnected portion of the data line 2 are connected by the conductive film 5.

An interlayer insulating film 13 as a second insulating film is provided over the conductive film 5, and a pixel electrode 4 is provided thereon.

Here, it is preferable that the thickness of the insulating film 12 is set within a range of 1 μm from the thickness of the data line 2. Also,
The thickness of the interlayer insulating film 13 is preferably set in the range of 1 μm to 5 μm, more preferably 1.5 μm to 3 μm.
It is in the range of μm. As a material of the interlayer insulating film 13, it is preferable to use a material having a low relative dielectric constant.

The wiring substrate is bonded to a counter substrate provided with a counter electrode (not shown) with a predetermined gap therebetween, and a liquid crystal as a display medium is sealed in the gap to form a liquid crystal display device (liquid crystal panel). Is done.

In this liquid crystal display device, when an ON voltage (scanning voltage) is applied to the gate line 1 of the wiring substrate, T
The FT 6 is turned on, and the signal voltage applied to the data line 2 is applied to the pixel electrode 4. Thereby, the pixel capacitance (liquid crystal) between the pixel electrode 4 and the counter electrode is charged.

The manufacture of the active matrix type display device according to the first embodiment will be described with reference to FIGS. 3 (a), 3 (b), 4 and 5.

First, a conductive thin film is formed on the surface of a substrate 8 having a light-transmitting and insulating property, and this is patterned to form a gate line 1 and a Cs line 3. Here, a glass substrate is used as the substrate 8, but a substrate made of another material may be used as long as it has a light-transmitting property and an insulating property.

Next, an insulating thin film serving as a gate insulating film 9, a semiconductor thin film serving as a semiconductor layer 6a, and a semiconductor thin film serving as a semiconductor contact layer 14 cover the gate line 1 and the Cs line 3.
An electrode contact material thin film is sequentially formed. Here, silicon nitride was used as the insulating thin film, and amorphous silicon was used as the semiconductor thin film. However, another material may be used for the insulating thin film as long as it has insulating properties.

Subsequently, a transparent conductive thin film and a conductive thin film are sequentially formed, and the data line 2, the drain electrode 7 and the source electrode 15 which is a part of the data line 2 are formed by patterning the conductive thin film. Next, the lower data line 11, the lower drain electrode 16, the lower source electrode 17, and the Cs electrode 10 are formed by patterning the transparent conductive thin film. Here, IT is used as a transparent conductive thin film.
Although O is used and a Ta-based metal material is used as the conductive thin film, another material may be used as long as it is a conductive material. Further, the data bus line, the drain electrode, the source electrode, and the Cs electrode may be formed using one kind of conductive material, or may be formed using a transparent conductive material. In this case, the lower data bus line 11 and the lower drain electrode 16 become unnecessary. The width of the data bus line 2 is
The thickness was set to about 8 μm in consideration of electric driving conditions. Thus, the TFT 6 is formed.

Thereafter, an insulating layer serving as an insulating film 12 is formed, and a contact hole 5 a is formed in the insulating film 12 on the data line 2.
To form Here, the insulating film 12 is formed using silicon nitride, but any other material having an insulating property may be used, and the same material as an interlayer insulating film 13 described later may be used.

Here, if the data line 2 is broken, the correction can be performed as shown in FIG.

First, as shown in FIGS. 5A and 5B, a conductive paste 5b is supplied on the insulating film 12 over at least two contact holes 5a sandwiching the disconnection point Op. Here, Op indicates a disconnection failure caused by film peeling.

This conductive paste is an organic solution containing a metal material, and can be drawn in a desired shape because it is in a liquid state. As a material of the conductive paste 5b, for example, a solution in which metal fine particles such as Au, Ag, and Al are dispersed in an organic solvent such as α-terpineol, toluene, and xylene can be used. Also, Pd, Ti,
A solution in which a metal complex such as Pt or Au is dissolved in an organic solvent may be used. Further, any other material may be used as long as it can deposit and form a high-purity conductive film by heating.

Next, by heating and drying the applied conductive paste 5b, as shown in FIG. 5C, the conductive film 5 connecting the data lines 2 exposed from the contact holes 5a on both sides of the defective portion is formed. Form. For example, according to Vacuum Metallurgy's catalog “Trademark Perfect Gold & Silver by Ultrafine Particles”, a typical particle size is 0.1 μm.
When a solution in which Au ultrafine particles of about 01 μm are dispersed in α-terbineol at a concentration of about 50% by mass is used, 3
0.25 μm thick A obtained by heating at 00 ° C. for 15 minutes
It is disclosed that the u thin film exhibits a specific resistance of 11 μΩcm, which is a resistance low enough to connect a disconnection. In addition, as a heating method at this time, an Ar laser or a YAG
By employing a local heating method using a laser or the like, the throughput can be reduced.

Subsequently, as shown in FIG. 5D, an insulating layer as an interlayer insulating film 13 is formed, and a contact hole 4a for connecting the pixel electrode 4 and the drain electrode 7, and a contact hole 4a A contact hole 4b for connecting to the Cs electrode 10 is formed. Here, the relative dielectric constant is 3.5.
Although the interlayer insulating film 13 having a thickness of about 3.0 μm was formed using the photosensitive acrylic resin described above, other materials having an insulating property may be used. Note that at least one of the insulating film 12 and the interlayer insulating film 13 as the second insulating film is preferably an organic insulating film.

Thereafter, a pixel electrode 4 is formed by patterning a conductive film such as ITO. At this time, a conductive film is also formed inside the contact holes 4a and 4b, and the pixel electrode 4 and the drain electrode 7 are connected, and the pixel electrode 4 and the Cs electrode 10 are connected.

The wiring substrate manufactured in this manner and the opposing substrate provided with the opposing electrodes are bonded to each other with a predetermined gap therebetween, and a liquid crystal is sealed in the gap to complete a liquid crystal display device.

The active matrix type display device of the first embodiment having the above configuration has the following excellent features.

(1) When a disconnection occurs in the data line 2, the conductive film 5 disconnects the portion O through the contact hole 5 a.
Since the data lines 2 can be connected on both sides of p, a signal voltage can be applied to the pixel electrode 4 from the location where the disconnection occurs.

(2) If a leak occurs at the intersection of the gate line 1 and the data line 2, it can be corrected as follows.

First, as shown in FIG.
Before forming the data line 2, the data line 2 is cut at both sides R of the intersection Lk by irradiating, for example, a laser beam or the like. As a result, no voltage is applied to the data line 2 at the intersection, and a leak failure between the gate line 1 and the data line 2 can be corrected.

Next, as shown in FIG.
Is formed, and a contact hole 5a exposing the data line 2 is formed as shown in FIG.

Subsequently, as shown in FIG. 6D, a conductive paste 5b is supplied on the insulating film 12 over at least two contact holes 5a sandwiching the cut portion R.

Next, by heating and drying the applied conductive paste 5b, as shown in FIG. 6E, a conductive film 5 connecting the data lines 2 exposed from the contact holes 5a on both sides of the defective portion is formed. Form. Thus, the cut data line 2 is repaired, and as a result, a leak failure between the gate line 1 and the data line 2 at the intersection is corrected.

Thereafter, as shown in FIG. 6 (f), an insulating layer as an interlayer insulating film 13 is formed, and a contact hole 4a for connecting the pixel electrode 4 and the drain electrode 7, and a pixel electrode 4 and Cs A contact hole 4b for connecting to the electrode 10 is formed. A wiring substrate is manufactured by forming a pixel electrode 4 thereon by patterning a conductive film such as ITO.

(3) Since the conductive film 5 is provided on the insulating film 12, even if the data line 2 is disconnected due to a foreign material mixed during the film formation, the conductive film 5 can easily avoid the foreign material. .

(4) Since the conductive film 5 is covered with the interlayer insulating film 13 and the conductive film 5 is protected in a later process, the reliability can be improved.

(5) Since the contact holes 5a are provided one by one at predetermined intervals from the intersection of the gate signal wiring 1 and the data signal wiring 2, the data lines 2 are provided.
No matter where the disconnection occurs, the conductive film 5 can apply a signal voltage to the pixel electrode 4 ahead of the disconnection location.

(6) Since a contact hole can be formed by a photolithography process or the like, the risk of damaging the data line 2 is extremely reduced as compared with the conventional technique of removing an insulating film using an excimer laser or the like. be able to.

(7) The aperture ratio can be increased as compared with the prior art in which the bus lines are duplicated.

In the first embodiment, the pixel electrode 4 and the drain electrode 7 are directly connected. However, as shown in FIG. 7, the Cs electrode 10 and the drain electrode 7 are connected to the connection electrode 10a.
, The pixel electrode 4 and the drain electrode 7 may be connected via the Cs electrode 10 and the connection electrode 10a.

In FIG. 1 and FIG. 7, the Cs electrode 10 is arranged on the Cs line 3 common to each pixel, and an auxiliary capacitance is provided at the overlapping portion of the Cs line 3, the gate insulating film 9 and the Cs electrode 10. Although the structure of Cs on Common was adopted, FIG.
As shown in FIG. 7, a part of the Cs electrode 10 is superimposed on the gate line 1 corresponding to the adjacent pixel electrode 4, and an auxiliary capacitance is provided in a superimposed portion of the gate line 1, the gate insulating film 9 and the Cs electrode 10. The structure may be Cs onGate.

(Embodiment 2) An active matrix display device of Embodiment 2 will be described with reference to FIG.
The second embodiment, the third embodiment and the fourth embodiment described later.
In the following, components having the same functions as the components in the above-described first embodiment are denoted by the same reference numerals, and description thereof is omitted.

FIG. 9 is a plan view showing the structure of one pixel of a wiring board in the active matrix display device of the second embodiment.

In this wiring board, the gate line 1, the data line 2, the Cs line 3, and the pixel electrode 4 are arranged as in the first embodiment.

A Cs electrode 10 is formed on the Cs line 3 via a gate insulating film (not shown).
An auxiliary capacitance having a Common structure is formed. This C
The s-electrode 10 is connected to the pixel electrode 4 via the contact hole 4b of the gate insulating film.

In the insulating film 12 (not shown) provided so as to cover these, a contact hole 22a is provided for each pixel electrode 4 on the gate line 1 instead of the contact hole 5a of the first embodiment.

The active matrix display device of the second embodiment is similar to the active matrix display device except that the step of forming the contact hole 5a in the insulating film 12 is omitted, and a step of forming the contact hole 22a in the insulating film 12 is added instead. It can be manufactured in the same manner as in Embodiment 1.

When the gate line 1 of this active matrix type display device is disconnected, the gate line 1 exposed from the contact hole 22a of the insulating film 12 is connected to the gate line 1 in the same manner as in the case of forming the conductive film 5 in the first embodiment. The conductive film 22 is connected.

The active matrix display device of the second embodiment has the following excellent features.

(1) When a disconnection occurs in the gate line 1, a scanning voltage can be applied to the pixel electrode 4 from the location where the disconnection occurred by the conductive film 22.

(2) If a leak occurs at the intersection between the gate line 1 and the data line 2, before forming the insulating film 12, the gate line 1 is irradiated with a laser beam or the like so that the gate line 1 is on both sides of the intersection. Disconnect with As a result, no voltage is applied to the gate line 1 at the intersection, and a leak failure between the gate line 1 and the data line 2 can be corrected. next,
By forming a conductive film 22 that connects the gate line 1 exposed from the contact hole 22a on both sides of the defective portion, the cut data line 2 is repaired. As a result, the connection between the gate line 1 and the data line 2 at the intersection is established. The leak defect is corrected.

(3) Since the contact holes 22a are provided one by one at predetermined intervals from the intersection of the gate signal wiring 1 and the data signal wiring 2, a break in any part of the gate line 1 occurs. Even if it occurs, a signal voltage can be applied to the pixel electrode 4 from the location where the disconnection occurs due to the conductive film 22.

(4) Since a contact hole can be formed by a photolithography process or the like, the risk of damaging the data line 2 is extremely reduced as compared with the conventional technique of removing an insulating film using an excimer laser or the like. be able to.

(5) The aperture ratio can be made wider as compared with the prior art in which the bus lines are duplicated.

In the second embodiment, the Cs electrode 10
Is arranged on the Cs line 3 common to each pixel, and a Cs on Common structure in which an auxiliary capacitance is provided at a superimposed portion of the Cs line 3, the gate insulating film, and the Cs electrode 10 is adopted.
0, a part of the Cs electrode 10 is superimposed on the gate bus line 1 corresponding to the adjacent pixel electrode 4,
Gate bus line 1, gate insulating film and Cs electrode 10
May be a Cs on Gate structure in which an auxiliary capacitance is provided in a superimposed portion of.

In addition to the structure of the second embodiment, by forming the same contact hole 5a in the insulating film 12 as in the first embodiment, the disconnection of the gate line 1 can be corrected and the disconnection of the data line 2 can be corrected. It can be possible.

(Embodiment 3) An active matrix display device of Embodiment 3 will be described with reference to FIG.

FIGS. 11 and 12 are plan views showing the configuration of the wiring substrate in the active matrix display device of the third embodiment.

In this wiring board, contact holes 5c and contact holes 22a are not provided, and contact holes 5c are formed at both ends of data line 2 outside the display area.
It has the same configuration as the first and second embodiments except that contact holes 22c are provided at both ends of the gate line 1.

The gate line 1 and the data line 2 are connected to the pixel electrode 4
Are wider outside the display region where the contact holes are provided, and the areas of the contact holes 5c and 22c are larger than those in the first and second embodiments.

The active matrix display device of the third embodiment has the following excellent features in addition to the excellent features of the active matrix display devices of the first and second embodiments.

(1) Even if the disconnection location cannot be specified, if the disconnected wiring can be detected, the contact holes 5c at both ends can be detected.
By forming a conductive film that connects the electrodes or the contact holes 22c to each other, a signal voltage or a scanning voltage can be supplied to all the pixel electrodes to correct a disconnection defect or a leak defect.

(2) Since the areas of the contact holes 5c and 22c are large, the areas of the bus lines (gate line 1 and data line 2) exposed from the contact holes 5c and 22c are widened, and the connection with the conductive film is increased. Reliability can be improved.

(Embodiment 4) FIGS. 13, 14 and 1 show an active matrix display device of Embodiment 4.
5 will be described. In these figures, the pixel electrodes are omitted.

As in the first embodiment, the wiring substrate of the active matrix type display device of the fourth embodiment is formed on the insulating film 12 covering the data line 1 for each pixel electrode.
Is provided with a contact hole 5a for exposing the contact hole 5a.

In the active matrix display device of the fourth embodiment, when a leak failure occurs at the intersection R between the gate line 1 and the data line 2 as shown in FIG.
The defect is corrected as follows.

First, contact hole 5 sandwiching intersection R
The conductive film 5 which bypasses the intersection R is formed over a and 5a.

Next, the data lines 2 are cut by irradiating laser beams or the like to both sides R1 and R2 of the intersection R. As a result, no voltage is applied to the data line 2 at the intersection R, and the leak failure between the gate line 1 and the data line 2 is corrected. Further, the signal voltage is supplied to the data line 2 before the intersection R by the conductive film 5.

The intersection S between the data line 2 and the Cs line 3
In the case where a leak failure occurs, the data line 2 is cut on both sides of the intersection S by irradiating a laser beam or the like. As a result, no voltage is applied to the data line 2 at the intersection S, and a leak failure between the data line 2 and the Cs line 3 can be corrected.

If a disconnection failure occurs in the wiring board, the defect is corrected as follows. For example, FIG.
When a disconnection failure occurs at the Op portion of the data line 2 as shown in FIG. 5, the contact holes 5a, 5
The conductive film 5 is formed over the area a to form an electrical bypass. As a result, the signal voltage is supplied to the data line 2 connected to the conductive film 5 via the contact hole 5a, bypassing the disconnection defective portion Op through the conductive film 5.

Further, when a disconnection defect Od as shown in FIG. 15 occurs in the wiring board, a conductive film 5a is formed over the contact holes 5a and 5a sandwiching Od so as to bypass the defective portion Od. Here, Od indicates a disconnection failure caused by foreign matter (dust).

As described above, according to the active matrix type display device of the fourth embodiment, when a disconnection failure occurs, an electrical bypass is provided by the conductive film 5 in the disconnection portion, so that the disconnection failure of the data line 2 is achieved. The voltage application to the data line 2 can be maintained by bypassing the section. At the same time, when a leak failure occurs at the intersection of the wirings, the data line 2 is separated from the leak failure portion, and an electrical bypass is provided by the conductive film 5 to bypass the leak failure portion and connect to the data line 2. Voltage application can be maintained.

Although the contact hole 5a of the insulating film 12 is provided on the data line 2 in FIGS. 13 to 15, the contact hole 22a of the insulating film 12 is provided on the gate line 1 as in the second embodiment. It can also be configured.

In the first to fourth embodiments, the bus line is cut by irradiating a laser beam. However, if a leak failure is found before the wiring substrate and the counter substrate are bonded to each other, a bus line other than the laser beam is used. The bus line may be cut by physical means or chemical means. The same applies to the case where a leak defect is corrected in the process of manufacturing a wiring board.

In the first to third embodiments, the case where the disconnection failure occurs in the gate line 1 or the data line 2 has been described. However, the intersection between the gate line 1 and the data line 2 and the data line 2 and the Cs When a leak failure occurs at the intersection with the line 3, the leak failure is corrected by cutting the gate line 1 or the data line 2 on both sides of the intersection having the leak failure as in the fourth embodiment. Can be.

In the first to fourth embodiments, an inverted staggered TFT is used as a switching element. However, another switching element such as a staggered TFT or an MIM element may be used, and the switching element can operate as a switching element. If so, the material, structure and manufacturing method are not particularly limited. Can be used without. When a staggered TFT is used, the arrangement of the gate lines and the semiconductor layers is different from that of the inverted staggered TFT. Also, M
When an IM element is used, the above-described wiring substrate has a structure in which the gate line 1 as a scanning line is omitted, and instead, a scanning line having the same width as a pixel electrode is provided on a counter substrate (or a color filter substrate). . Therefore, in this case, the present invention can be applied to the data line formed together with the MIM element on the wiring board. However, in this case,
The pixel electrode and each data line are formed in different layers via an insulating film.

In the first to fourth embodiments, the conductive film 5 is formed on the insulating film 12 covering the data line 2, and the pixel is formed on the second insulating film (interlayer insulating film) 13 provided thereon. Although the electrode 4 is formed, the conductive film 5 and the pixel electrode 4 may be formed in the same layer on the same insulating film.

Further, although liquid crystal is used as the display medium, another display medium such as plasma may be used.

[0127]

As described in detail above, according to the present invention, when a disconnection failure occurs in a scanning wiring or a signal wiring, a scanning voltage or a signal voltage bypasses a defective portion via a conductive film. Thus, a scanning voltage or a signal voltage is applied to the scanning wiring or the signal wiring before the disconnection defective portion. Therefore, even if a disconnection failure occurs in a scanning wiring or a signal wiring between a certain pixel electrode and an adjacent pixel electrode, a scanning voltage or a signal voltage can be applied to a pixel electrode provided before a disconnection portion. As a result, it is possible to prevent the occurrence of line-like defects, greatly increase the yield rate of the active matrix type display device, reduce the manufacturing cost, and improve the reliability.

Further, in the case of the present invention, when a leak failure occurs at the intersection of the scanning wiring and the signal wiring, the scanning wiring or the signal wiring is cut off on both sides of the leak defective portion. Leakage defects between the scanning wiring and the signal wiring can be corrected. Further, even if the scanning wiring or the signal wiring is cut at that portion, the scanning voltage or the signal voltage bypasses the cutting part via the conductive film and is applied to the scanning wiring or the signal wiring before the cutting part. A voltage is applied. Therefore, even if a leak failure occurs at the intersection of the scanning wiring and the signal wiring between a certain pixel electrode and an adjacent pixel electrode, a scanning voltage or a signal voltage is applied to the pixel electrode provided before the leak failure location. be able to. As a result, it is possible to prevent the occurrence of line-like defects, greatly increase the yield rate of the active matrix type display device, reduce the manufacturing cost, and improve the reliability.

By providing one contact hole in the insulating film at each end of the scanning wiring or the signal wiring,
By setting the number of contact holes to the minimum necessary number, a contact portion having a wide area can be formed outside the display region. Also, even when the position of the disconnection defective part cannot be specified,
Since the disconnection defect can be corrected by connecting both ends of the wiring, the inspection process for specifying the disconnection defective portion can be simplified. As a result, the manufacturing cost of the active matrix display device can be reduced, and the reliability can be further improved.

Further, by providing one contact hole of the insulating film at a position spaced apart from the intersection of the scanning wiring and the signal wiring by a predetermined distance, the scanning wiring part corresponding to a certain pixel electrode and the adjacent pixel electrode Can be connected by a conductive film, or a signal wiring portion corresponding to a certain pixel electrode and a signal wiring portion corresponding to an adjacent pixel electrode can all be connected by a conductive film. Therefore, a portion where the scanning wiring and the signal wiring are not connected by the conductive film can be eliminated. As a result, the manufacturing cost of the active matrix display device can be reduced, the reliability can be improved, and high display quality can be realized.

By providing the pixel electrode on the organic insulating film covering the scanning wiring and the signal wiring, the capacitance between the pixel electrode and the signal wiring can be reduced, and the pixel electrode is formed below the signal wiring. The capacitance between the scanning wiring and the pixel electrode can also be reduced. Therefore, crosstalk due to the capacitance between the pixel electrode and the signal wiring can be reduced, and the pull-in of the pixel voltage due to the capacitance between the pixel electrode and the scanning wiring can be suppressed. As a result, the display quality can be further improved by suppressing the influence of these capacitances.

When the conductive film for bypassing the defective portion is formed on the organic insulating film covering the scanning wiring and the signal wiring, disconnection of the conductive film hardly occurs, so that the yield can be improved. Further, when the pixel electrode and the conductive film are formed in the same layer, they can be simultaneously patterned using one mask, so that the manufacturing cost can be further reduced.

When the conductive film is provided on the insulating film covering the scanning wiring and the signal wiring, and the pixel electrode is provided on the second insulating film provided so as to cover the conductive film, the pixel electrode and the conductive film Are formed in separate layers, so that leakage between the pixel electrode and the conductive film is extremely unlikely to occur. Further, since the contact hole of the insulating film and the conductive film are covered with the second insulating film,
The wiring and the conductive film exposed by the contact hole can be protected, and the reliability of the repair is dramatically improved.

When the insulating film covering the scanning wiring and the signal wiring is an organic insulating film, even if a disconnection occurs in the signal wiring due to a steep step due to the peeling of the gate insulating film, the insulating film fills the step and flatten it. Therefore, the conductive film provided thereon is less likely to be disconnected. Therefore,
Even if the signal wiring is disconnected due to the peeling of the gate insulating film, the signal voltage can be supplied to all the pixel electrodes by bypassing the signal voltage by the conductive film.

When the second insulating film covering the conductive film is an organic insulating film, the wiring can be filled and flattened, so that the alignment of a display medium such as a liquid crystal is prevented from being disordered. The quality can be improved.

[Brief description of the drawings]

FIG. 1A is a plan view illustrating a configuration of a wiring substrate in an active matrix display device according to a first embodiment;
(B) is an enlarged plan view showing the TFT portion.

FIG. 2 is an enlarged view of one pixel of a wiring substrate in the active matrix display device according to the first embodiment.

FIG. 3A is a sectional view taken along line AA ′ of FIG. 2;
(B) is an enlarged view of a contact hole portion.

FIG. 4 is a cross-sectional view of a TFT portion of a wiring substrate in the active matrix display device according to the first embodiment.

FIGS. 5A to 5D are process diagrams for describing correction in the case where a disconnection failure occurs in the active matrix display device of the first embodiment.

FIGS. 6A to 6F are process diagrams for explaining correction in the case where a leak failure occurs in the active matrix display device of the first embodiment.

FIG. 7 is a plan view showing another configuration of the wiring substrate in the active matrix display device of the first embodiment.

FIG. 8 is a plan view showing another configuration of the wiring substrate in the active matrix display device of the first embodiment.

FIG. 9 is a plan view illustrating a configuration for one pixel of a wiring substrate in an active matrix display device according to a second embodiment.

FIG. 10 is a plan view showing another configuration of the wiring substrate in the active matrix display device of Embodiment 2.

FIG. 11 is a plan view showing a contact hole portion for exposing a data line in a wiring substrate in an active matrix display device according to a third embodiment.

FIG. 12 is a plan view showing a contact hole portion for exposing a gate line in a wiring substrate in an active matrix display device according to a third embodiment.

FIG. 13 is a plan view illustrating a configuration of a wiring substrate in an active matrix display device according to a fourth embodiment.

FIG. 14 is a plan view for describing correction in the case where a leak failure occurs in the active matrix display device of the fourth embodiment.

FIG. 15 is a plan view for describing correction when a disconnection failure occurs in the active matrix display device of the fourth embodiment.

FIG. 16 is a plan view showing a configuration of one pixel of a wiring substrate in a conventional active matrix display device.

FIG. 17 is a plan view illustrating a configuration of one pixel of a wiring substrate in a conventional active matrix display device.

FIG. 18 is a plan view showing a configuration of one pixel of a wiring substrate in a conventional active matrix display device.

FIG. 19 is a plan view showing a configuration of a wiring substrate in a conventional active matrix display device.

FIG. 20 is a plan view showing a configuration of one pixel of a wiring substrate in a conventional active matrix display device.

FIGS. 21A to 21C are cross-sectional views illustrating a conventional disconnection correction method.

FIGS. 22A to 22C are cross-sectional views illustrating a conventional disconnection correction method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Gate line 2 Data line 3 Cs line 4 Pixel electrode 4a, 4b, 5a Contact hole 5, 22 Conductive film 6 TFT 6a Semiconductor layer 7 Drain electrode 8 Substrate 9 Gate insulating film 10 Cs electrode 11 Lower data line 12 Insulating film 13 Interlayer insulating film 14 Semiconductor contact layer 15 Data electrode 16 Lower drain electrode 17 Lower data electrode

Claims (11)

[Claims] 1. A semiconductor device comprising: a plurality of pixel electrodes arranged in a matrix; and switching elements connected to each pixel electrode; and a scanning line for applying a scanning voltage to the switching elements and a signal voltage for applying the scanning elements to the switching elements. An active matrix display device in which signal wirings are provided so as to intersect with each other, wherein a contact hole that covers at least one of the scanning wirings and the signal wirings and exposes the wirings at two or more portions is provided. Having an insulating film provided, on the insulating film,
An active matrix display device in which a conductive film is provided over two contact holes sandwiching a disconnection defective portion of at least one wiring or a leak defective portion at an intersection of both wirings. 2. A semiconductor device comprising: a plurality of pixel electrodes arranged in a matrix; and switching elements connected to each of the pixel electrodes; a scanning line for applying a scanning voltage to the switching elements; and a signal voltage for applying a signal voltage to the switching elements. A method of manufacturing an active matrix display device in which signal wirings are provided so as to intersect each other, exposing wirings covered with the insulating film to an insulating film covering at least one of the scanning wirings and the signal wirings. Forming two or more contact holes to be formed, and forming a conductive film on the insulating film over two contact holes sandwiching the defective portion when a disconnection failure occurs in the corresponding wiring. A method for manufacturing an active matrix display device. 3. A semiconductor device comprising: a plurality of pixel electrodes arranged in a matrix; and switching elements connected to each of the pixel electrodes; a scanning line for applying a scanning voltage to the switching elements; and a signal for applying a signal voltage to the switching elements. A method of manufacturing an active matrix display device in which signal wirings are provided so as to intersect each other, exposing wirings covered with the insulating film to an insulating film covering at least one of the scanning wirings and the signal wirings. A step of forming two or more contact holes to be formed, a step of cutting a corresponding wiring on both sides of the defective part when a leak failure occurs at an intersection of both wirings, and two contacts sandwiching the cut part Forming a conductive film over the insulating film over the hole. 4. The method according to claim 1, wherein at least one of the scanning line and the signal line extends to both outer sides of a display area in which the pixel electrode is provided, and the contact holes are provided at both ends of the corresponding line. 4. The method of manufacturing an active matrix display device according to claim 2, wherein the active matrix display device is formed one by one. 5. The active matrix display device according to claim 2, wherein the contact holes are formed one by one at predetermined intervals from respective intersections of the scanning wiring and the signal wiring. Manufacturing method. 6. The active matrix display device according to claim 2, wherein an organic insulating film is formed as an insulating film covering the signal wiring, and the pixel electrode is formed on the insulating film. Production method. 7. The method of manufacturing an active matrix display device according to claim 6, wherein the conductive film and the pixel electrode are simultaneously patterned on the organic insulating film using the same material. 8. The active matrix according to claim 2, wherein a second insulating film is formed so as to cover said conductive film, and said pixel electrode is formed on said second insulating film. Method for manufacturing a type display device. 9. The method according to claim 8, wherein an organic insulating film is formed as at least one of the insulating film and the second insulating film. 10. The conductive film according to claim 2, wherein the conductive film is formed by supplying an organic solution containing a metal material and heating the insulating film over the insulating film over the two contact holes. A method for manufacturing an active matrix display device. 11. The method according to claim 10, wherein a metal complex is used as the metal material of the organic solution, or at least one kind of fine metal particles of Au, Ag, Pd, and Al is used.