JPH11191628A5 - - Google Patents

Info

Publication number
JPH11191628A5
JPH11191628A5 JP1998152305A JP15230598A JPH11191628A5 JP H11191628 A5 JPH11191628 A5 JP H11191628A5 JP 1998152305 A JP1998152305 A JP 1998152305A JP 15230598 A JP15230598 A JP 15230598A JP H11191628 A5 JPH11191628 A5 JP H11191628A5
Authority
JP
Japan
Prior art keywords
semiconductor film
forming
region
heat treatment
crystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998152305A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11191628A (ja
JP4068219B2 (ja
Filing date
Publication date
Priority claimed from JP15230598A external-priority patent/JP4068219B2/ja
Priority to JP15230598A priority Critical patent/JP4068219B2/ja
Application filed filed Critical
Priority to US09/172,300 priority patent/US6348368B1/en
Priority to TW087117048A priority patent/TW439092B/zh
Priority to KR10-1998-0044059A priority patent/KR100506378B1/ko
Publication of JPH11191628A publication Critical patent/JPH11191628A/ja
Priority to US10/044,926 priority patent/US6825072B2/en
Priority to US10/978,462 priority patent/US7166500B2/en
Publication of JPH11191628A5 publication Critical patent/JPH11191628A5/ja
Publication of JP4068219B2 publication Critical patent/JP4068219B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP15230598A 1997-10-21 1998-05-16 半導体装置の作製方法 Expired - Fee Related JP4068219B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP15230598A JP4068219B2 (ja) 1997-10-21 1998-05-16 半導体装置の作製方法
US09/172,300 US6348368B1 (en) 1997-10-21 1998-10-14 Introducing catalytic and gettering elements with a single mask when manufacturing a thin film semiconductor device
TW087117048A TW439092B (en) 1997-10-21 1998-10-14 Method of manufacturing a semiconductor device
KR10-1998-0044059A KR100506378B1 (ko) 1997-10-21 1998-10-21 반도체장치의제조방법
US10/044,926 US6825072B2 (en) 1997-10-21 2002-01-15 Method of manufacturing a semiconductor device
US10/978,462 US7166500B2 (en) 1997-10-21 2004-11-02 Method of manufacturing a semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-308043 1997-10-21
JP30804397 1997-10-21
JP15230598A JP4068219B2 (ja) 1997-10-21 1998-05-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11191628A JPH11191628A (ja) 1999-07-13
JPH11191628A5 true JPH11191628A5 (2) 2005-09-29
JP4068219B2 JP4068219B2 (ja) 2008-03-26

Family

ID=26481266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15230598A Expired - Fee Related JP4068219B2 (ja) 1997-10-21 1998-05-16 半導体装置の作製方法

Country Status (4)

Country Link
US (1) US6348368B1 (2)
JP (1) JP4068219B2 (2)
KR (1) KR100506378B1 (2)
TW (1) TW439092B (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105521B2 (en) 2000-02-01 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device having light emitting elements with red color filters

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USRE43450E1 (en) 1994-09-29 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor thin film
US5789284A (en) * 1994-09-29 1998-08-04 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor thin film
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US6335445B1 (en) * 1997-03-24 2002-01-01 Societe De Conseils De Recherches Et D'applications Scientifiques (S.C.R.A.S.) Derivatives of 2-(iminomethyl)amino-phenyl, their preparation, their use as medicaments and the pharmaceutical compositions containing them
JP3830623B2 (ja) * 1997-07-14 2006-10-04 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7141821B1 (en) 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2000208771A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
US6639244B1 (en) 1999-01-11 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
US6576924B1 (en) 1999-02-12 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6861670B1 (en) 1999-04-01 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multi-layer wiring
TW518650B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP4627822B2 (ja) 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 表示装置
TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW480554B (en) 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3432187B2 (ja) 1999-09-22 2003-08-04 シャープ株式会社 半導体装置の製造方法
TWI243432B (en) * 1999-10-29 2005-11-11 Hitachi Ltd Semiconductor device, method of making the same and liquid crystal display device
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US6639265B2 (en) 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JP3767305B2 (ja) * 2000-03-01 2006-04-19 ソニー株式会社 表示装置およびその製造方法
US6674774B1 (en) * 2000-05-10 2004-01-06 Infineon Technologies North America Corp. Chopped laser driver for low noise applications
TWI263336B (en) * 2000-06-12 2006-10-01 Semiconductor Energy Lab Thin film transistors and semiconductor device
JP2002083974A (ja) 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
US6828587B2 (en) * 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7538772B1 (en) * 2000-08-23 2009-05-26 Nintendo Co., Ltd. Graphics processing system with enhanced memory controller
SG138468A1 (en) 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
US7118780B2 (en) * 2001-03-16 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Heat treatment method
KR100876927B1 (ko) * 2001-06-01 2009-01-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 열처리장치 및 열처리방법
US7238557B2 (en) 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP4381675B2 (ja) * 2002-11-21 2009-12-09 富士通株式会社 半導体装置及びその製造方法、該半導体装置に係る測定用治具
US7566640B2 (en) 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
CN100502018C (zh) * 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
JP5500771B2 (ja) * 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
JP5386525B2 (ja) * 2011-02-15 2014-01-15 株式会社半導体エネルギー研究所 発光装置及び発光装置の作製方法
CN102315120B (zh) * 2011-09-02 2015-02-04 上海芯导电子科技有限公司 降低半导体芯片漏电流的方法
KR20140026257A (ko) * 2012-08-23 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2014126574A (ja) * 2012-12-25 2014-07-07 Seiko Epson Corp 電気光学装置用基板の製造方法、電気光学装置、および電子機器

Family Cites Families (9)

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JPH05109737A (ja) * 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JP2791858B2 (ja) 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (2) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
TW279275B (2) * 1993-12-27 1996-06-21 Sharp Kk
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6124154A (en) * 1996-10-22 2000-09-26 Seiko Epson Corporation Fabrication process for thin film transistors in a display or electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105521B2 (en) 2000-02-01 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device having light emitting elements with red color filters

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