JPH11200032A5 - - Google Patents
Info
- Publication number
- JPH11200032A5 JPH11200032A5 JP1998004312A JP431298A JPH11200032A5 JP H11200032 A5 JPH11200032 A5 JP H11200032A5 JP 1998004312 A JP1998004312 A JP 1998004312A JP 431298 A JP431298 A JP 431298A JP H11200032 A5 JPH11200032 A5 JP H11200032A5
- Authority
- JP
- Japan
- Prior art keywords
- residual
- partial pressure
- film
- curve
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Description
次に残留H2O分圧がAl2O3膜の絶縁特性に及ぼす影響を調べるため、真空室1をベーキング排気・プラズマクリーニング後、大気でリークし真空室1内を大気に曝し水分を吸着させ、そのあとベーキングなしで5種類の所定の真空度すなわち1×10−6Pa、5×10−6Pa、1×10−5Pa、5×10−5Pa、1×10−4Paまで排気し、直ちに図2に示す手順で約100Åの厚さのAl2O3膜を作製した。このとき残留H2O分圧を調整するため、必要に応じ微量のH2Oを微小リークバルブより真空室1に導入してAl2O3膜を作製した。残留H2O分圧としてはArガス放電中の四重極質量分析計で測定した値を用いた。このようにして得られた膜のV−I特性を図3に先の結果と合わせて示した。同図の曲線Bは到達真空度が1×10−6PaのときのV−I特性、曲線Cは5×10−6Pa、曲線Dは1×10−5Pa、曲線Eは5×10−5Pa、曲線Fは1×10−4Paのときのものである。尚、同図にカッコ書きした数値は、それぞれの到達圧力におけるArガス放電中の残留H2O分圧である。これによれば、残留H2O分圧が1×10−6Pa以上になると絶縁膜のリーク電流が大きくなり、絶縁特性の劣化が目立つようになることが分かる(曲線E、曲線F参照)。この残留H2O分圧の1×10−6Paは、前述した高真空中ではAlの大きな結晶粒が得られない理由と一致している。この点から、Al2O3膜の絶縁特性の劣化は、プラズマ酸化するAl膜の結晶粒径が小さいためプラズマ酸化した後のAl2O3膜の結晶粒径も小さくなり、多数存在する結晶粒径を経由してのリーク電流が増加したものと考えられる。 Next, to investigate the effect of residual H2O partial pressure on the insulating properties of the Al2O3 film, the vacuum chamber 1 was baked, evacuated, and plasma cleaned, then leaked with air, exposing the inside of the vacuum chamber 1 to the air to absorb moisture. Then, without baking, the chamber was evacuated to five predetermined vacuum levels: 1x10-6 Pa, 5x10-6 Pa, 1x10-5 Pa, 5x10-5 Pa, and 1x10-4 Pa. An Al2O3 film approximately 100 Å thick was immediately fabricated using the procedure shown in Figure 2. To adjust the residual H2O partial pressure, a small amount of H2O was introduced into the vacuum chamber 1 through a micro -leak valve as needed to fabricate the Al2O3 film. The residual H2O partial pressure was measured using a quadrupole mass spectrometer during Ar gas discharge. The V-I characteristics of the film thus obtained are shown in Figure 3, along with the previous results. In the figure, curve B represents the V-I characteristics when the ultimate vacuum is 1× 10-6 Pa, curve C represents 5× 10-6 Pa, curve D represents 1× 10-5 Pa, curve E represents 5× 10-5 Pa, and curve F represents 1× 10-4 Pa. The parenthesized values in the figure indicate the residual H2O partial pressure during Ar gas discharge at each ultimate pressure. This indicates that when the residual H2O partial pressure exceeds 1× 10-6 Pa, the leakage current of the insulating film increases, and the deterioration of the insulating properties becomes noticeable (see curves E and F). This residual H2O partial pressure of 1× 10-6 Pa corresponds to the reason why large Al crystal grains cannot be obtained in the high vacuum described above. From this perspective, the deterioration of the insulating properties of the Al2O3 film is thought to be due to the small crystal grain size of the Al film to be plasma oxidized, which results in a small crystal grain size in the Al2O3 film after plasma oxidation, resulting in an increase in the leakage current via the numerous crystal grains present.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP431298A JPH11200032A (en) | 1998-01-12 | 1998-01-12 | Sputtering film forming method of insulated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP431298A JPH11200032A (en) | 1998-01-12 | 1998-01-12 | Sputtering film forming method of insulated film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11200032A JPH11200032A (en) | 1999-07-27 |
| JPH11200032A5 true JPH11200032A5 (en) | 2005-06-16 |
Family
ID=11580976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP431298A Pending JPH11200032A (en) | 1998-01-12 | 1998-01-12 | Sputtering film forming method of insulated film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11200032A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2346155B (en) * | 1999-01-06 | 2003-06-25 | Trikon Holdings Ltd | Sputtering apparatus |
| JP4497660B2 (en) * | 2000-06-01 | 2010-07-07 | キヤノン株式会社 | Photovoltaic element manufacturing method |
| JP5658170B2 (en) | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
| US20140083841A1 (en) * | 2011-05-13 | 2014-03-27 | Sharp Kabushiki Kaisha | Thin film-forming method |
| JP6905716B2 (en) * | 2016-03-08 | 2021-07-21 | 学校法人 芝浦工業大学 | Manufacturing method of aluminum nitride film and manufacturing method of high pressure resistant parts |
-
1998
- 1998-01-12 JP JP431298A patent/JPH11200032A/en active Pending
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