JPH11200032A5 - - Google Patents

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Publication number
JPH11200032A5
JPH11200032A5 JP1998004312A JP431298A JPH11200032A5 JP H11200032 A5 JPH11200032 A5 JP H11200032A5 JP 1998004312 A JP1998004312 A JP 1998004312A JP 431298 A JP431298 A JP 431298A JP H11200032 A5 JPH11200032 A5 JP H11200032A5
Authority
JP
Japan
Prior art keywords
residual
partial pressure
film
curve
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998004312A
Other languages
Japanese (ja)
Other versions
JPH11200032A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP431298A priority Critical patent/JPH11200032A/en
Priority claimed from JP431298A external-priority patent/JPH11200032A/en
Publication of JPH11200032A publication Critical patent/JPH11200032A/en
Publication of JPH11200032A5 publication Critical patent/JPH11200032A5/ja
Pending legal-status Critical Current

Links

Description

次に残留HO分圧がAl膜の絶縁特性に及ぼす影響を調べるため、真空室1をベーキング排気・プラズマクリーニング後、大気でリークし真空室1内を大気に曝し水分を吸着させ、そのあとベーキングなしで5種類の所定の真空度すなわち1×10−6Pa、5×10−6Pa、1×10−5Pa、5×10−5Pa、1×10−4Paまで排気し、直ちに図2に示す手順で約100の厚さのAl膜を作した。このとき残留HO分圧を調整するため、必要に応じ微量のHOを微小リークバルブより真空室に導入してAl膜を作した。残留HO分圧としてはArガス放電中の四重極質量分析計で測定した値を用いた。このようにして得られた膜のV−I特性を図3に先の結果と合わせて示した。同図の曲線Bは到達真空度が1×10−6PaのときのV−I特性、曲線Cは5×10−6Pa、曲線Dは1×10−5Pa、曲線Eは5×10−5Pa、曲線Fは1×10−4Paのときのものである。尚、同図にカッコ書きした数値は、それぞれの到達圧力におけるArガス放電中の残留HO分圧である。これによれば、残留HO分圧が1×10−6Pa以上になると絶縁膜のリーク電流が大きくなり、絶縁特性の劣化が目立つようになることが分かる(曲線E、曲線F参照)。この残留HO分圧の1×10−6Paは、前述した高真空中ではAlの大きな結晶粒が得られない理由と一致している。この点から、Al膜の絶縁特性の劣化は、プラズマ酸化するAl膜の結晶粒径が小さいためプラズマ酸化した後のAl膜の結晶粒径も小さくなり、多数存在する結晶粒径を経由してのリーク電流が増加したものと考えられる。 Next, to investigate the effect of residual H2O partial pressure on the insulating properties of the Al2O3 film, the vacuum chamber 1 was baked, evacuated, and plasma cleaned, then leaked with air, exposing the inside of the vacuum chamber 1 to the air to absorb moisture. Then, without baking, the chamber was evacuated to five predetermined vacuum levels: 1x10-6 Pa, 5x10-6 Pa, 1x10-5 Pa, 5x10-5 Pa, and 1x10-4 Pa. An Al2O3 film approximately 100 Å thick was immediately fabricated using the procedure shown in Figure 2. To adjust the residual H2O partial pressure, a small amount of H2O was introduced into the vacuum chamber 1 through a micro -leak valve as needed to fabricate the Al2O3 film. The residual H2O partial pressure was measured using a quadrupole mass spectrometer during Ar gas discharge. The V-I characteristics of the film thus obtained are shown in Figure 3, along with the previous results. In the figure, curve B represents the V-I characteristics when the ultimate vacuum is 1× 10-6 Pa, curve C represents 5× 10-6 Pa, curve D represents 1× 10-5 Pa, curve E represents 5× 10-5 Pa, and curve F represents 1× 10-4 Pa. The parenthesized values in the figure indicate the residual H2O partial pressure during Ar gas discharge at each ultimate pressure. This indicates that when the residual H2O partial pressure exceeds 1× 10-6 Pa, the leakage current of the insulating film increases, and the deterioration of the insulating properties becomes noticeable (see curves E and F). This residual H2O partial pressure of 1× 10-6 Pa corresponds to the reason why large Al crystal grains cannot be obtained in the high vacuum described above. From this perspective, the deterioration of the insulating properties of the Al2O3 film is thought to be due to the small crystal grain size of the Al film to be plasma oxidized, which results in a small crystal grain size in the Al2O3 film after plasma oxidation, resulting in an increase in the leakage current via the numerous crystal grains present.

JP431298A 1998-01-12 1998-01-12 Sputtering film forming method of insulated film Pending JPH11200032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP431298A JPH11200032A (en) 1998-01-12 1998-01-12 Sputtering film forming method of insulated film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP431298A JPH11200032A (en) 1998-01-12 1998-01-12 Sputtering film forming method of insulated film

Publications (2)

Publication Number Publication Date
JPH11200032A JPH11200032A (en) 1999-07-27
JPH11200032A5 true JPH11200032A5 (en) 2005-06-16

Family

ID=11580976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP431298A Pending JPH11200032A (en) 1998-01-12 1998-01-12 Sputtering film forming method of insulated film

Country Status (1)

Country Link
JP (1) JPH11200032A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2346155B (en) * 1999-01-06 2003-06-25 Trikon Holdings Ltd Sputtering apparatus
JP4497660B2 (en) * 2000-06-01 2010-07-07 キヤノン株式会社 Photovoltaic element manufacturing method
JP5658170B2 (en) 2009-12-25 2015-01-21 キヤノンアネルバ株式会社 Sputtering method and sputtering apparatus
US20140083841A1 (en) * 2011-05-13 2014-03-27 Sharp Kabushiki Kaisha Thin film-forming method
JP6905716B2 (en) * 2016-03-08 2021-07-21 学校法人 芝浦工業大学 Manufacturing method of aluminum nitride film and manufacturing method of high pressure resistant parts

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