JPH11204549A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device in which the peeling of a semiconductor integrated circuit chip can be prevented, and moisture resistance can be made proper. SOLUTION: This method is provided for manufacturing a plastic ball grid array 12, having a structure in which a semiconductor integrated circuit chip 7 is mounted on a wiring substrate 3 with resin components as main constituent materials, a solder ball terminal 11 to be connected with a mother board is provided, and the surrounding part of the semiconductor integrated circuit chip 7 is resin encapsulated 10. Also, this method includes a process for removing moisture attached to the surface of a wiring board 6 immediately prior to before a process for fixing the semiconductor integrated circuit chip 7 to the wiring board 6 with an adhesive 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to mounting a semiconductor integrated circuit chip on a front surface of a wiring board, further sealing the semiconductor integrated circuit chip with a resin, and furthermore, The present invention relates to a method of manufacturing a plastic ball grid array having solder ball terminals for connecting to a motherboard on the back surface.

[0002]

2. Description of the Related Art Generally, a semiconductor integrated circuit chip is used by being sealed in a semiconductor package. The role of this semiconductor package is to electrically connect each electrode of the semiconductor integrated circuit chip to the motherboard, and to radiate and protect the semiconductor integrated circuit chip.

[0003] A plastic ball grid array (hereinafter referred to as PBGA), which is a type of semiconductor package, is used to mount a semiconductor integrated circuit chip on a wiring board mainly composed of a resin component and connect it to a motherboard. And has a structure in which the periphery of the semiconductor integrated circuit chip is resin-sealed.

The PBGA has a structure that is more advantageous than others in terms of miniaturization of semiconductor packages, electrical characteristics, and mounting yield, and has been adopted in fields such as portable telephones, pagers, and portable computers. I have.

[0005] A process for manufacturing a PBGA according to the prior art will be described below with reference to the drawings. FIG. 1 shows a conventional P
FIG. 2 is a cross-sectional view illustrating the structure of the BGA 12, and FIG. 2 is a plan view illustrating a copper pattern on the resin substrate 1.

The resin substrate 1 shown in FIG. 1 has a substantially square planar shape and is made of a resin material having a thickness of about 0.3 mm. Examples of the material of the resin substrate 1 include a resin material such as an epoxy resin and a polyimide resin, and preferably a thermosetting epoxy resin impregnated with glass fiber.

While the thermosetting epoxy resin of the resin substrate 1 is in a semi-cured state, the front and back surfaces have a thickness of 18 μm.
Paste copper foil of about m.

Next, the front surface and the back surface of the resin substrate 1 on which the copper foil is adhered are simultaneously heated while applying pressure to complete the curing of the thermosetting epoxy resin. Fix the copper foil on the back side.

Thereafter, a plurality of through holes 2 are provided by a drilling means such as a cutting drill. Further, the surface of the resin substrate 1 including the wall surfaces of the through holes 2 is cleaned, and a copper plating layer is provided on the entire surface of the resin substrate 1 by electroless plating and electrolytic plating. This plating layer is applied up to the inner surface of the through hole 2.

As described above, an etching process is performed on the resin substrate 1 having the copper thin film layer provided on the front and back surfaces using an etching mask and an etching solution. By this etching process, as shown in FIG. 2, a substrate electrode 3 for electrically connecting to each electrode of the semiconductor integrated circuit chip 7 and an electric path are provided as a copper pattern on the front surface of the resin substrate 1.

As shown in FIG. 2, the substrate electrode 3 is provided so as to surround the outer periphery of the semiconductor integrated circuit chip 7 to be fixed in a later step.

Further, by this etching process, an electric path for electrically connecting the substrate electrode 3 and the through hole 2 is provided on the front surface of the resin substrate 1 as a copper pattern.

Further, by this etching process, a pad electrode 4 for soldering the solder ball terminals 11 is provided on the back surface of the resin substrate 1 as a copper pattern. In addition, an electrical path (not shown) for electrically connecting the pad electrode 4 and the through hole 2 is provided on the back surface of the resin substrate 1 as a copper pattern.

Next, the resin substrate 1 provided with the copper pattern by the etching process as described above is placed on the front and back surfaces.
A resin insulating film 5 for protecting an electric path is provided. Examples of the material of the resin insulating film 5 include a photosensitive resin composition such as an acrylic modified epoxy.

When a photosensitive resin composition is used as the material of the resin insulating film 5, the substrate electrode 3 on the front surface of the resin substrate 1 is exposed by performing exposure and development treatments, and other copper The resin insulating film 5 is provided so as to cover the pattern.

The back surface of the resin substrate 1 is also exposed and developed, so that the pad electrode 4 is exposed, and a resin insulating film 5 is provided so as to cover other copper patterns.

As described above, the wiring substrate 6 shown in FIG. 1 has the substrate electrode 3 and the resin insulating film 5 on the front surface. Further, the wiring board 6 has the pad electrode 4 and the resin insulating film 5 on the back surface. Further, the wiring board 6 electrically connects the substrate electrode 3 on the front surface and the pad electrode 4 on the back surface via the through hole 2 and an electric path formed of a copper pattern.

Next, the surface of the copper pattern exposed from the resin insulating film 5 on the front and back surfaces of the wiring board 6 is
A nickel (Ni) plating layer of about 5 μm to 5 μm is provided, and a gold (A)
u) providing a plating layer;

Thereafter, the semiconductor integrated circuit chip 7 is fixed to the center of the wiring substrate 6 by heating and curing an adhesive 8 made of a thermosetting resin composition. Examples of the material of the adhesive 8 include a thermosetting epoxy resin composition.

Next, each electrode of the semiconductor integrated circuit chip 7 and the substrate electrode 3 are electrically connected by using the connection wire 9. Desirable as a material of the connection wire 9 is a gold (Au) wire having excellent conductivity.

Thereafter, in order to shield and protect the semiconductor integrated circuit chip 7, the semiconductor integrated circuit chip 7 and the connection wires 9 are resin-sealed by a transfer molding method using a thermosetting sealing resin 10. .

Next, a solder ball is supplied to the pad electrode 4 on the back surface of the wiring board 6 and heated in a heating furnace.
A solder ball terminal 11 is provided. The solder ball terminals 11 are used to electrically connect to electrodes of a motherboard (not shown). The conventional PBGA 12 shown in FIG. 1 is manufactured by the manufacturing process described above. In addition,
The PBGA 12 electrically connects each electrode of the semiconductor integrated circuit chip 7 and the solder ball terminal 11 via the connection wire 9 and the wiring board 6.

[0023]

The prior art PBGA1
2 has a structure that is more advantageous than others in terms of miniaturization of semiconductor packages, electrical characteristics, and mounting yield.

The PBGA 12 is entirely heated to a temperature equal to or higher than the melting point of the solder, thereby melting the solder ball terminals 11 and electrically connecting them to the electrodes of the motherboard. At the time of this reflow soldering, peeling occurring at a portion where the adhesive 8 of the PBGA 12 and the wiring board 6 are bonded is a problem.

In the manufacturing method of the prior art, in the step of fixing the semiconductor integrated circuit chip 7 to the wiring board 6 using the adhesive 8, the moisture adsorbed on the surface of the wiring board 6 is reduced to the curing temperature of the adhesive 8 of 150 ° C. By being heated to such an extent, it is vaporized and bubbles remain at the interface between the wiring board 6 and the adhesive 8.

After the above-described PBGA 12 is completed, the wiring board 6 is mounted in a reflow soldering process of mounting the wiring board 6 on a motherboard.
The moisture in the PBGA 12 is vaporized and expanded and blows out to the bubbles at the interface between the adhesive 8 and the adhesive 8, so that the interface between the wiring board 6 and the adhesive 8 is separated.

A surface-mount type semiconductor package such as the PBGA 12 has a structure in which various materials having different material characteristics such as a coefficient of thermal expansion and an elastic modulus are laminated. In particular, when the temperature of the PBGA12 body reaches 200 ° C. or more during the reflow soldering process due to the difference in thermal expansion coefficient between materials, a shear force is generated at the interface between the laminated materials, and when the adhesive force at the interface is weak, Peeling occurs.

As described above, if air bubbles are present at the interface between the wiring board 6 and the adhesive 8, the effective bonding area of the adhesive 8 decreases,
As a result, the adhesion at the interface becomes weak. Therefore, in the above-described reflow soldering process, separation due to shearing force occurs at the interface between the wiring board 6 and the adhesive 8.

Further, even in a place where there is no air bubble at the interface between the wiring board 6 and the adhesive 8, the adhesion force is weak because a layer of adsorbed moisture is interposed between the wiring board 6 and the adhesive 8. Therefore, the wiring board 6 and the adhesive 8 can be used in the reflow soldering process described above.
Peeling occurs due to shearing force on the bonding surface through the layer of adsorbed moisture.

The peeling of the lower portion of the semiconductor integrated circuit chip 12 causes the wiring board 6 to swell toward the motherboard, making it impossible to mount, or causing a failure such as disconnection of the electric path inside the PBGA 12, resulting in reliability of the semiconductor device. There is a fatal problem that impairs sex.

(Object of the Invention) Accordingly, an object of the present invention is to solve the above-mentioned problems and to provide a method of manufacturing a semiconductor device which is free from peeling of a semiconductor integrated circuit chip and has excellent moisture resistance.

[0032]

In order to achieve the above object, the present invention employs the following method of manufacturing a semiconductor device.

According to the method of manufacturing a semiconductor device of the present invention, there is provided a process for removing moisture adhering to the surface of a wiring board whose main component is a resin component, and fixing a semiconductor integrated circuit chip to the wiring board using an adhesive. A step of connecting each electrode of the semiconductor integrated circuit chip to a substrate electrode provided on the wiring board with a conductive wire; a step of resin-sealing the semiconductor integrated circuit chip, the connection wire, and the substrate electrode; Providing a solder ball for connecting to the motherboard on the back surface.

In the method of manufacturing a semiconductor device according to the present invention, a step of heating and removing moisture adhering to the surface of a wiring board containing a resin component as a main constituent material, and using an adhesive to attach a semiconductor integrated circuit chip to the wiring board. And the process of sticking
A process of connecting each electrode of the semiconductor integrated circuit chip to a substrate electrode provided on the wiring board with a conductive wire, a process of resin-sealing the semiconductor integrated circuit chip, the connection wire, and the substrate electrode with a resin, Providing a solder ball for connecting to the motherboard.

In the method of manufacturing a semiconductor device according to the present invention, a step of removing moisture adhering to the surface of the wiring board mainly composed of a resin component, and a step 60 after the end of this step.
Fixing the semiconductor integrated circuit chip to the wiring substrate using an adhesive within a minute; connecting each electrode of the semiconductor integrated circuit chip to a substrate electrode provided on the wiring substrate with a conductive wire; The method includes a step of resin-sealing the circuit chip, the connection wires, and the substrate electrodes, and a step of providing solder balls for connecting to the motherboard on the back surface of the wiring board.

The method of manufacturing a semiconductor device according to the present invention includes a step of heating and removing moisture adhering to the surface of a wiring board containing a resin component as a main constituent material, and a step of attaching the semiconductor to the wiring board within 60 minutes after the completion of this step. A step of fixing the integrated circuit chip using an adhesive, a step of connecting each electrode of the semiconductor integrated circuit chip to a substrate electrode provided on the wiring board with a conductive wire, a step of connecting the semiconductor integrated circuit chip, the connection wire, and the substrate electrode And a step of providing solder balls for connecting to the motherboard on the back surface of the wiring board.

(Function) In the method of manufacturing a semiconductor device according to the present invention, the semiconductor integrated circuit chip is adhered to the wiring board surface immediately before the step of fixing the semiconductor integrated circuit chip on the wiring board using a resin component as a main constituent material using an adhesive. It has a process of removing water that has been removed.

Therefore, in the process of fixing the semiconductor integrated circuit chip to the wiring substrate using the adhesive, the moisture adsorbed on the surface of the wiring substrate is vaporized by being heated to the curing temperature of the adhesive of about 150 ° C. No air bubbles remain at the interface between the wiring board and the adhesive. Therefore, in the reflow soldering process of mounting the PBGA on the motherboard, the moisture in the PBGA does not evaporate and expand to the bubbles at the interface, and the interface does not peel off at the interface between the wiring board and the adhesive.

Further, the manufacturing process of the semiconductor device of the present invention is as follows.
After the end of the process of removing water adhering to the wiring board surface 6
Within 0 minutes, the semiconductor integrated circuit chip is fixed on the wiring substrate using an adhesive.

Therefore, before the moisture adheres again to the surface of the wiring board from which the moisture has been removed, the fixing of the semiconductor integrated circuit chip is completed. Therefore, no bubbles remain at the interface between the adhesive and the wiring board during the heating and curing process of the adhesive. Therefore, in the reflow soldering process of mounting the PBGA on the motherboard, the moisture in the PBGA does not evaporate and expand to the bubbles at the interface, and the interface does not peel off at the interface between the wiring board and the adhesive.

Further, since no air bubbles remain at the interface between the wiring board and the adhesive, a large effective adhesive area of the adhesive can be secured, and as a result, a good adhesion at the interface can be obtained. For this reason, even if the PBGA is entirely heated in the reflow soldering process, no separation due to shearing force occurs at the interface between the wiring substrate and the adhesive.

Further, good adhesion can be achieved without a layer of adsorbed moisture between the wiring board 6 and the adhesive 8. For this reason, even if the PBGA is entirely heated in the reflow soldering process, no separation due to shearing force occurs at the interface between the wiring substrate and the adhesive.

[0043]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the manufacturing method of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the structure of a semiconductor device employing the manufacturing method of the present invention.

The resin substrate 1 shown in FIG. 1 has a substantially square planar shape and is made of a resin material having a thickness of about 0.3 mm. Examples of the material of the resin substrate 1 include a resin material such as an epoxy resin and a polyimide resin, and preferably a thermosetting epoxy resin impregnated with glass fiber. While the thermosetting epoxy resin of the resin substrate 1 is in a semi-cured state, a copper foil having a thickness of about 18 μm is attached to the front and back surfaces.

Next, the front surface and the back surface of the resin substrate 1 on which the copper foil is adhered are simultaneously heated while applying pressure to complete the curing of the thermosetting epoxy resin. Fix the copper foil on the back side.

Thereafter, a plurality of through holes 2 are provided by a drilling means such as a cutting drill. Further, the surface of the resin substrate 1 including the wall surfaces of the through holes 2 is cleaned, and a copper plating layer is provided on the entire surface of the resin substrate 1 by electroless plating and electrolytic plating. This plating layer is applied up to the inner surface of the through hole 2.

As described above, the resin substrate 1 provided with the copper thin film layer on the front and back surfaces is subjected to the etching process using the etching mask and the etching solution. By this etching process, as shown in FIG. 2, a substrate electrode 3 for electrically connecting to each electrode of the semiconductor integrated circuit chip 7 and an electric path are provided as a copper pattern on the front surface of the resin substrate 1.

As shown in FIG. 2, the substrate electrode 3 is provided so as to surround the outer periphery of the semiconductor integrated circuit chip 7 to be fixed in a later step.

Further, by this etching process, an electric path for electrically connecting the substrate electrode 3 and the through hole 2 is provided on the front surface of the resin substrate 1 as a copper pattern. Further, by this etching process, pad electrodes 4 for soldering the solder ball terminals 11 are provided as copper patterns on the back surface of the resin substrate 1. In addition, an electrical path (not shown) for electrically connecting the pad electrode 4 and the through hole 2 is provided on the back surface of the resin substrate 1 as a copper pattern.

Next, on the front and back surfaces of the resin substrate 1 provided with the copper pattern by etching as described above,
A resin insulating film 5 for protecting an electric path is provided. Examples of the material of the resin insulating film 5 include a photosensitive resin composition such as an acrylic modified epoxy.

When a photosensitive resin composition is used as the material of the resin insulating film 5, the substrate electrode 3 on the front surface of the resin substrate 1 is exposed by performing exposure and development processing, and other copper The resin insulating film 5 is provided so as to cover the pattern. In addition, the back surface of the resin substrate 1 is also subjected to exposure and development processing,
A resin insulating film 5 is provided so as to expose the pad electrode 4 and cover other copper patterns.

As described above, the wiring substrate 6 shown in FIG. 1 has the substrate electrode 3 and the resin insulating film 5 on the front surface. Further, the wiring board 6 has the pad electrode 4 and the resin insulating film 5 on the back surface. Further, the wiring board 6 electrically connects the substrate electrode 3 on the front surface and the pad electrode 4 on the back surface via the through hole 2 and an electric path formed of a copper pattern.

Next, the surface of the copper pattern exposed from the resin insulating film 5 on the front and back surfaces of the wiring board 6
A nickel (Ni) plating layer of about 5 μm to 5 μm is provided, and a gold (A)
u) providing a plating layer;

Next, the wiring board 6 is heated at 150 ° C. for 15 to 30 minutes to remove moisture adhering to the surface. A hot air oven or a belt furnace of an infrared heater is used for heating.

When the moisture adhering to the surface of the wiring board 6 is removed by heating, the heating temperature is desirably 100 ° C. or higher at which the moisture evaporates. Further, when the wiring board 6 is heated to 200 ° C. or more for a long time, the wiring board 6 deteriorates. Therefore, the desired heating temperature is 1
It is about 50 ° C.

Thereafter, the thermosetting adhesive 8 is applied to the wiring substrate 6.
And the semiconductor integrated circuit chip 7 is connected to the wiring board 6.
And press down so that the thickness of the adhesive 8 becomes about 50 μm.

Next, the adhesive 8 is cured by heating. When a thermosetting epoxy resin composition is used as the material of the adhesive 8, heat curing is performed at 150 ° C. for about 60 minutes.
Further, the step of heating and curing the semiconductor integrated circuit chip 7 on the wiring board 6 using the adhesive 8 and fixing the same is completed within 60 minutes after the completion of the step of heating and removing the moisture attached to the surface of the wiring board 6. There is a need.

The process of fixing the adhesive 8 by heating and curing is as follows.
If the process of heating and removing the moisture adhering to the surface of the wiring board 6 is not completed within 60 minutes after the completion of the process, the moisture adheres to the wiring board 6 again, and the effect of the present invention cannot be obtained.

FIG. 3 shows a change in weight of the wiring board 6 during drying at 150 ° C. As is clear from FIG.
After charging at 0 ° C., the moisture adsorbed on the surface is desorbed, so that the weight decreases. FIG. 4 shows a change in weight when the wiring board 6 is dried in a clean room (temperature: 22 to 25 ° C., humidity: 30 to 65%) in which the atmosphere is controlled after the drying of the wiring board 6 at 150 ° C. is completed.

FIG. 4 shows that when the wiring substrate 6 is left in a clean room after being dried, the weight increases with time because moisture adheres to the surface again, and after 60 minutes, the weight has almost returned to the weight before drying.

FIGS. 3 and 4 show that in the wiring board 6, the adhesion and desorption of moisture in the air occur reversibly due to the reversible weight change before and after the drying step. Therefore, the semiconductor integrated circuit chip 7 is bonded on the wiring substrate 6 with the adhesive 8.
The step of fixing by heating and curing must be completed within 60 minutes after the end of the step of removing moisture adhering to the surface of the wiring board 6.

Bisphenol F having an epoxy equivalent of 175
Using a thermosetting adhesive 8 prepared by mixing a type epoxy resin, 2-ethyl 4-methylimidazole and dicyandiamide at a weight ratio of 90: 5: 5, a 5 mm square on a wiring board 6 not subjected to a drying step When the semiconductor integrated circuit chip 7 was bonded by heat curing at 150 ° C. for 60 minutes, the adhesive force in the shear direction was 5.8 kgf.

Further, using the above-mentioned adhesive 8 at 150 ° C.
When a 5 mm square semiconductor integrated circuit chip 7 was bonded to the wiring board 6 immediately after the 30-minute surface drying step by heating and curing at 150 ° C. for 60 minutes, the adhesive force in the shear direction was 9.8 kgf.

Further, using the above-mentioned adhesive 8 at 150 ° C.
When a 5 mm square semiconductor integrated circuit chip 7 is bonded by heating and curing at 150 ° C. for 60 minutes on the wiring substrate 6 left in a clean room for 60 minutes after performing the surface drying step for 30 minutes, the adhesive force in the shear direction is 5 It was 0.9 kgf.

As described above, if the step of heating and curing the adhesive 8 and bonding is not completed within 60 minutes after the end of the step of heating and removing the moisture adhering to the surface of the wiring board 6, Moisture adheres, and good adhesion between the wiring substrate 6 and the semiconductor integrated circuit chip 7 cannot be obtained.

In order to obtain good adhesion between the wiring board 6 and the semiconductor integrated circuit chip 7, the step of fixing the adhesive 8 by heating and curing is performed by removing moisture adhering to the surface of the wiring board 6 by heating. It is desirable to complete immediately after the end of the journey.

As a method for removing moisture adhering to the surface of the wiring board 6, besides the above-described substrate heating, the wiring board 6 is removed.
Is left in a reduced-pressure atmosphere to remove. Also in this method, the process of heating and curing the adhesive 8 and bonding is performed.
If the process of removing the water adhering to the surface of the wiring substrate 6 under reduced pressure is not completed within 60 minutes after the end of the process, the water adheres to the wiring substrate 6 again, and good adhesion between the wiring substrate 6 and the semiconductor integrated circuit chip 7 is ensured. I can't get it.

Further, in order to obtain good adhesion between the wiring board 6 and the semiconductor integrated circuit chip 7, the step of heating and curing the adhesive 8 and fixing the adhesive is performed in the step of removing water adhering to the surface of the wiring board 6 under reduced pressure. It is desirable to complete immediately after the end of.

As described above, in the method of manufacturing a semiconductor device according to the present invention, immediately before the step of fixing the semiconductor integrated circuit chip 7 on the wiring substrate 6 using the adhesive 8, the moisture adhering to the surface of the wiring substrate 6 is removed. It has a removal process.

Therefore, in the step of fixing the semiconductor integrated circuit chip 7 to the wiring board 6 using the adhesive 8, even if the wiring board 6 is heated to about 150 ° C., which is the curing temperature of the adhesive 8, it is adsorbed on the surface. Since moisture has been removed, no air bubbles due to evaporation of moisture remain at the interface between the wiring board 6 and the adhesive 8.

Therefore, in the reflow soldering process of mounting the PBGA 12 on the motherboard, the moisture in the PBGA 12 does not evaporate and expand to the bubbles at the interface, and the interface between the wiring board 6 and the adhesive 8 is separated. do not do.

Further, since no air bubbles remain at the interface between the wiring substrate 6 and the adhesive 8, a large effective bonding area of the adhesive 8 can be secured, and as a result, a good adhesion at the interface can be obtained.
For this reason, even if the PBGA 12 is entirely heated in the reflow soldering process, the separation between the wiring substrate 6 and the adhesive 8 due to the shearing force does not occur.

Further, good adhesion can be achieved without a layer of adsorbed moisture between the wiring board 6 and the adhesive 8. For this reason, even if the PBGA 12 is entirely heated in the reflow soldering process, peeling due to shearing force does not occur at the interface between the wiring board and the adhesive.

Next, each electrode of the semiconductor integrated circuit chip 7 and the substrate electrode 3 are electrically connected by using the connection wire 9. Desirable as a material of the connection wire 9 is a gold (Au) wire having excellent conductivity.

Thereafter, in order to shield and protect the semiconductor integrated circuit chip 7, the semiconductor integrated circuit chip 7 and the connection wires 9 are resin-sealed by a transfer molding method using a thermosetting sealing resin 10. .

Next, the pad electrode 4 on the back surface of the wiring board 6
The solder ball terminal 11 is provided by supplying a solder ball to the solder ball and heating it in a heating furnace. The solder ball terminals 11 are used to electrically connect to electrodes of a motherboard (not shown). The PBGA 12 connects each electrode of the semiconductor integrated circuit chip 7 and the solder ball terminal 11 with each other.
It is electrically connected to the connection wire 9 via the wiring board 6.

As described above, according to the manufacturing method of the present invention, the semiconductor integrated circuit chip 7 is
Immediately before the step of fixing by using the method, there is a step of removing moisture attached to the surface of the wiring board 6.

Therefore, in the process of fixing the semiconductor integrated circuit chip 7 to the wiring board 6 by using the adhesive 8, the moisture adsorbed on the surface of the wiring board 6 reduces the curing temperature of the adhesive 8 to 150 ° C.
When heated to about ° C., there is no gasification and no air bubbles remain at the interface between the wiring board 6 and the adhesive 8. Therefore, no bubbles remain at the interface between the adhesive 8 and the wiring board 6 during the heating and curing process of the adhesive 8. Therefore, in the reflow soldering process of mounting the PBGA 12 on the motherboard, the moisture in the PBGA 12 does not evaporate and expand to the bubbles at the interface, and the interface does not peel off at the interface between the wiring board 6 and the adhesive 8.

Further, the manufacturing process of the semiconductor device of the present invention is as follows.
The semiconductor integrated circuit chip 7 is placed on the wiring board 6 within 60 minutes after the completion of the process of removing the moisture attached to the surface of the wiring board 6.
Is fixed using an adhesive 8.

Therefore, before the moisture adheres again to the surface of the wiring substrate 6 from which the moisture has been removed, the semiconductor integrated circuit chip 7
Complete the fixation. Therefore, no bubbles remain at the interface between the adhesive 8 and the wiring board 6 during the heating and curing process of the adhesive 8. Therefore, during the reflow soldering process of mounting the PBGA 12 on the motherboard, the air bubbles at the interface are reduced by P.
The water in the BGA 12 is not vaporized and expanded and blows out, and no separation occurs at the interface between the wiring board 6 and the adhesive 8.

Further, since no air bubbles remain at the interface between the wiring board 6 and the adhesive 8, a large effective adhesive area of the adhesive 8 can be secured, and as a result, a good adhesion at the interface can be obtained.
For this reason, even if the PBGA 12 is entirely heated in the reflow soldering process, the separation between the wiring substrate 6 and the adhesive 8 due to the shearing force does not occur.

Further, good adhesion can be achieved without a layer of adsorbed moisture between the wiring board 6 and the adhesive 8. For this reason, even if the PBGA 12 is entirely heated in the reflow soldering process, the separation between the wiring substrate 6 and the adhesive 8 due to the shearing force does not occur.

Accordingly, the peeling of the lower portion of the semiconductor integrated circuit chip 7 does not cause a failure such as the wiring board 6 swelling toward the motherboard and cannot be mounted, or the electric path inside the PBGA 12 is disconnected. Therefore, the semiconductor substrate having excellent moisture resistance does not cause a failure such as a wiring board swelling to the motherboard side due to peeling of the lower portion of the semiconductor integrated circuit chip, making mounting impossible, and an electric path in the PBGA being disconnected. A device is obtained.

[0084]

As is apparent from the above description, in the method of manufacturing a semiconductor device according to the present invention, after the completion of the PBGA, the air bubbles at the interface between the wiring board and the adhesive are removed in the reflow soldering process of mounting on the motherboard. Since the water inside the PBGA evaporates and expands and blows out, no separation occurs at the interface between the wiring board and the adhesive.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a PBGA structure in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing a copper pattern on a front surface of a resin substrate in a PBGA in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a graph showing a change in weight during drying of a wiring board in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a graph showing a change in weight of a wiring board after drying of the method of manufacturing a semiconductor device according to the embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 resin substrate 2 through hole 3 substrate electrode 4 pad electrode 5 resin insulating film 6 wiring substrate 7 semiconductor integrated circuit chip 8 adhesive 9 connection wire 10 sealing resin 11 solder ball 12 PBGA

Claims (4)

[Claims] 1. A step of removing moisture adhering to the surface of a wiring board mainly composed of a resin component, a step of fixing a semiconductor integrated circuit chip to the wiring board by using an adhesive, and a step of fixing the semiconductor integrated circuit chip. Connecting each of the electrodes to the substrate electrode provided on the wiring board with a conductive wire, sealing the semiconductor integrated circuit chip, the connection wire and the substrate electrode with a resin, and connecting the mother board to the back surface of the wiring board. Providing a solder ball for use in the method of manufacturing a semiconductor device of a plastic ball grid array. 2. A step of heating and removing moisture adhering to the surface of a wiring board containing a resin component as a main constituent material, a step of fixing a semiconductor integrated circuit chip to the wiring board by using an adhesive, and Connecting each electrode of the chip to the substrate electrode provided on the wiring board with a conductive wire; connecting the semiconductor integrated circuit chip, the connection wire and the substrate electrode with resin; connecting the mother board to the back surface of the wiring board Providing a solder ball for performing the method of manufacturing the semiconductor device of the plastic ball grid array. 3. A step of removing moisture adhering to the surface of the wiring board mainly composed of a resin component, and applying a semiconductor integrated circuit chip to the wiring board using an adhesive within 60 minutes after the completion of this step. A step of connecting each electrode of the semiconductor integrated circuit chip to a substrate electrode provided on the wiring board with a conductive wire; a step of resin-sealing the semiconductor integrated circuit chip, the connection wire, and the substrate electrode; Providing a solder ball for connecting to a motherboard on the back surface of the substrate. 4. A step of heating and removing moisture adhering to the surface of the wiring board mainly composed of a resin component, and using a bonding agent to attach the semiconductor integrated circuit chip to the wiring board within 60 minutes after the completion of this step. A step of connecting each electrode of the semiconductor integrated circuit chip and a substrate electrode provided on the wiring board with a conductive wire, a step of resin-sealing the semiconductor integrated circuit chip, the connection wire, and the substrate electrode, Providing a solder ball for connecting to a motherboard on the back surface of the wiring board.