JPH11214425A5 - - Google Patents

Claims (6)

A gold alloy wire for wire bonding of semiconductor elements, characterized in that high purity gold contains 0.1 to 3.0 weight percent of at least one of Zn, Co, Mo, and Cr, and 1 to 100 weight ppm of at least one of La, Eu, Be, Y, and Ca. A gold alloy wire for wire bonding of semiconductor elements, characterized in that high purity gold contains 0.1 to 3.0 weight percent of at least one of Zn, Co, Mo, and Cr, and 1 to 100 weight ppm of at least one of La, Eu, Be, and Y. A gold alloy wire for wire bonding of semiconductor elements, characterized in that high purity gold contains 0.1 to 3.0 weight percent of at least one of Zn, Co, Mo and Cr, and 10 to 100 weight ppm of Ca. A gold alloy wire for wire bonding of semiconductor elements, characterized in that it contains high purity gold containing 0.1 to 3.0 weight percent of at least one of Zn, Co, Mo, and Cr, and 1 weight ppm or more of Ca and at least one of La, Eu, Be, and Y, with a total of 1 to 100 weight ppm. 5. The gold alloy wire for wire bonding of semiconductor elements according to claim 1, further comprising 1 to 500 ppm by weight of at least one of Bi, Yb, Sb, Mg, In, Ru and Ir. The gold alloy wire for wire bonding of semiconductor elements according to any one of claims 1 to 5, further containing 0.01 to 2.0 wt% of at least one of Pd, Pt, Cu, and Ag, except for the range containing 0.5 to 3.0 wt% Co, 1 to 100 wt% total of one or more of Ca, Y, and La, with the balance being gold and unavoidable impurities, and 1 to 2.0 wt% Ag, 0.1 to 0.2 wt% Cr, 0.01 to 2.0 wt% total of at least one of Cu, Pd, and Pt, and 5 to 100 wt% total of at least one of Ca, Be, La, Eu, and Y or 5 to 500 wt% total of at least one of Yb and In, with the balance being gold and unavoidable impurities.