JPH11220218A5 - - Google Patents

Info

Publication number
JPH11220218A5
JPH11220218A5 JP1998315759A JP31575998A JPH11220218A5 JP H11220218 A5 JPH11220218 A5 JP H11220218A5 JP 1998315759 A JP1998315759 A JP 1998315759A JP 31575998 A JP31575998 A JP 31575998A JP H11220218 A5 JPH11220218 A5 JP H11220218A5
Authority
JP
Japan
Prior art keywords
heat dissipation
semiconductor light
solder
electrode
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998315759A
Other languages
Japanese (ja)
Other versions
JP4141549B2 (en
JPH11220218A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP31575998A priority Critical patent/JP4141549B2/en
Priority claimed from JP31575998A external-priority patent/JP4141549B2/en
Publication of JPH11220218A publication Critical patent/JPH11220218A/en
Publication of JPH11220218A5 publication Critical patent/JPH11220218A5/ja
Application granted granted Critical
Publication of JP4141549B2 publication Critical patent/JP4141549B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

本発明の請求項８に記載の半導体発光装置は、前記第１の電極は発光素子チップ内部の発光部に隣接する電極であり、第１の放熱部は第２の放熱部より高い熱伝導率を持つことを特徴とする。
本発明の請求項９に記載の半導体発光装置は、前記第１の放熱部と第２の放熱部は絶縁体であることを特徴とする。
本発明の請求項１０に記載の半導体発光装置は、前記第１の放熱部と第２の放熱部のいずれか一方が絶縁体であり、他方が導電体であることを特徴とする。 The semiconductor light-emitting device according to claim 8 of the present invention is characterized in that the first electrode is an electrode adjacent to the light-emitting portion inside the light-emitting element chip, and the first heat dissipation portion has a higher thermal conductivity than the second heat dissipation portion.
A ninth aspect of the present invention provides a semiconductor light emitting device, wherein the first heat dissipation portion and the second heat dissipation portion are made of an insulator.
A semiconductor light emitting device according to a tenth aspect of the present invention is characterized in that one of the first heat dissipation portion and the second heat dissipation portion is an insulator, and the other is a conductor.

本発明の請求項１１に記載の半導体発光装置は、前記第１の放熱部と第２の放熱部は導電体であり、第１の放熱部と第２の放熱部の間に絶縁体を有することを特徴とする。 According to an eleventh aspect of the present invention, there is provided a semiconductor light emitting device, wherein the first heat dissipation portion and the second heat dissipation portion are conductors, and an insulator is provided between the first heat dissipation portion and the second heat dissipation portion.

本発明の請求項１２に記載の半導体発光装置は、前記複数の放熱部の厚さが２０μｍ以上であることを特徴とする。 A semiconductor light emitting device according to a twelfth aspect of the present invention is characterized in that the thickness of the plurality of heat dissipation parts is 20 μm or more.

本発明の請求項１３に記載の半導体発光装置は、第１の放熱部と第１の電極、第２の放熱部と第２の電極は、それぞれ異方導電性樹脂で接続され、第１の放熱部と第２の放熱部の境界部には溝が形成されていることを特徴とする。 The semiconductor light-emitting device described in claim 13 of the present invention is characterized in that the first heat dissipation portion and the first electrode, and the second heat dissipation portion and the second electrode are each connected with an anisotropic conductive resin, and a groove is formed at the boundary between the first heat dissipation portion and the second heat dissipation portion.

本発明の請求項１４に記載の半導体発光装置の製造方法は、マウント部材上に導電性接着剤で複数の電極を固定する半導体発光装置の製造方法であって、第１の電極をマウント部材に固定した後に、第２の電極をマウント部材に固定することを特徴とする。 The method for manufacturing a semiconductor light-emitting device described in claim 14 of the present invention is a method for manufacturing a semiconductor light-emitting device in which multiple electrodes are fixed to a mounting member with a conductive adhesive, and is characterized in that after fixing a first electrode to the mounting member, a second electrode is fixed to the mounting member.

本発明の請求項１５に記載の半導体発光装置の製造方法は、前記マウント部材上にあらかじめ設置した、前記第１のハンダおよび第２のハンダを、第１のハンダの融点Ｔ１および第２のハンダの融点Ｔ２のいずれよりも高い温度に保持してから、マウント部材上に前記半導体発光素子チップを積載し、続いて、第１のハンダおよび第２のハンダを、Ｔ１とＴ２の中間の温度に所定時間保持し、その後、Ｔ１およびＴ２のいずれよりも低い温度に冷却する、各過程からなるダイボンディング工程を用いたことを特徴とする。 The manufacturing method of a semiconductor light-emitting device described in claim 15 of the present invention is characterized by using a die bonding process consisting of the following steps: first, the first solder and the second solder, which have been placed on the mounting member in advance, are held at a temperature higher than both the melting point T1 of the first solder and the melting point T2 of the second solder, then the semiconductor light-emitting element chip is loaded on the mounting member; subsequently, the first solder and the second solder are held at a temperature intermediate between T1 and T2 for a predetermined time; and then cooled to a temperature lower than both T1 and T2.

本発明の請求項１６に記載のマウント部材は、片面に複数の電極を有する半導体発光素子チップを積載するためのマウント部材であって、積載面上に複数のハンダが配置され、第１のハンダと第２のハンダの融点が異なっていることを特徴とする。 The mounting member described in claim 16 of the present invention is a mounting member for loading a semiconductor light-emitting element chip having multiple electrodes on one side, characterized in that multiple solders are arranged on the loading surface and the first solder and the second solder have different melting points.

本発明の請求項１７に記載のマウント部材は、片面に複数の電極を有する半導体発光素子チップを積載するためのマウント部材であって、半導体発光素子チップに対向する面側で、異なる熱伝導率を持つ複数の放熱部が並列に構成され、導電性接着剤が前記複数の放熱部に配置されていることを特徴とする。 The mounting member described in claim 17 of the present invention is a mounting member for loading a semiconductor light-emitting element chip having multiple electrodes on one side, characterized in that on the surface facing the semiconductor light-emitting element chip, multiple heat dissipation sections with different thermal conductivities are arranged in parallel, and conductive adhesive is arranged on the multiple heat dissipation sections.

Claims (17)

片面に複数の電極を有する半導体発光素子チップが、各電極に対向する導電膜パターンを積載面上に有したマウント部材に、導電性接着剤を用いて積載されて構成する半導体発光装置において、第１の電極と第２の電極とは異なるタイミングで、マウント部材に固定されることを特徴とする半導体発光装置。A semiconductor light-emitting device constructed by mounting a semiconductor light-emitting element chip having a plurality of electrodes on one side on a mounting member having a conductive film pattern on the mounting surface facing each electrode using a conductive adhesive, characterized in that the first electrode and the second electrode are fixed to the mounting member at different times. 前記複数の電極のうち、第１の電極は発光素子チップ内部の発光部に隣接する電極であり、第１の電極と第１の導電膜パターンとが第１のハンダで接続され、第２の電極と第２の導電膜パターンとが第１のハンダと異なる材料で接続されていることを特徴とする請求項１に記載の半導体発光装置。The semiconductor light-emitting device according to claim 1, characterized in that, among the plurality of electrodes, a first electrode is an electrode adjacent to a light-emitting portion inside the light-emitting element chip, the first electrode and a first conductive film pattern are connected by a first solder, and the second electrode and a second conductive film pattern are connected by a material different from the first solder. 前記第１のハンダと異なる材料は、第１のハンダの融点（Ｔ１）よりも高い融点（Ｔ２）を有する第２のハンダで構成されることを特徴とする、請求項２に記載の半導体発光装置。3. The semiconductor light emitting device according to claim 2, wherein the material different from the first solder is a second solder having a melting point (T2) higher than the melting point (T1) of the first solder. 前記第１のハンダと異なる材料は、第１のハンダの融点（Ｔ１）よりも低い融点（Ｔ２）を有する第２のハンダで構成されることを特徴とする、請求項２に記載の半導体発光装置。3. The semiconductor light emitting device according to claim 2, wherein the material different from the first solder is a second solder having a melting point (T2) lower than the melting point (T1) of the first solder. 前記第１のハンダと異なる材料は、導電性樹脂で構成されることを特徴とする、請求項２に記載の半導体発光装置。3. The semiconductor light emitting device according to claim 2, wherein the material different from the first solder is made of a conductive resin. 前記導電性樹脂は、異方導電性樹脂であり、前記マウント部材の積載面上の各導電膜パターンの間には溝が形成されていることを特徴とする請求項５に記載の半導体発光装置。6. The semiconductor light emitting device according to claim 5, wherein the conductive resin is an anisotropic conductive resin, and grooves are formed between the conductive film patterns on the mounting surface of the mounting member. 前記マウント部材の放熱部が熱伝導率の異なる複数の放熱部で構成され、第１の電極が第１の放熱部に配置され、第２の電極が第２の放熱部に配置されることを特徴とする請求項１に記載の半導体発光装置。2. The semiconductor light-emitting device according to claim 1, wherein the heat dissipation portion of the mounting member is composed of a plurality of heat dissipation portions having different thermal conductivities, the first electrode is disposed on the first heat dissipation portion, and the second electrode is disposed on the second heat dissipation portion. 前記第１の電極は発光素子チップ内部の発光部に隣接する電極であり、第１の放熱部は第２の放熱部より高い熱伝導率を持つことを特徴とする請求項７に記載の半導体発光装置。8. The semiconductor light emitting device according to claim 7, wherein the first electrode is an electrode adjacent to the light emitting portion inside the light emitting element chip, and the first heat dissipation portion has a higher thermal conductivity than the second heat dissipation portion. 前記第１の放熱部と第２の放熱部は絶縁体であることを特徴とする請求項７または８に記載の半導体発光装置。9. The semiconductor light emitting device according to claim 7, wherein the first heat dissipation portion and the second heat dissipation portion are made of an insulating material. 前記第１の放熱部と第２の放熱部のいずれか一方が絶縁体であり、他方が導電体であることを特徴とする請求項７または８に記載の半導体発光装置。9. The semiconductor light emitting device according to claim 7, wherein one of the first heat dissipation portion and the second heat dissipation portion is an insulator, and the other is a conductor. 前記第１の放熱部と第２の放熱部は導電体であり、第１の放熱部と第２の放熱部の間に絶縁体を有することを特徴とする請求項７または８に記載の半導体発光装置。 9. The semiconductor light emitting device according to claim 7, wherein the first heat dissipation portion and the second heat dissipation portion are made of conductors, and an insulator is provided between the first heat dissipation portion and the second heat dissipation portion. 前記複数の放熱部の厚さが２０μｍ以上であることを特徴とする請求項７から１１のいずれかに記載の半導体発光装置。 12. The semiconductor light emitting device according to claim 7 , wherein the thickness of the plurality of heat dissipation portions is 20 [mu]m or more. 第１の放熱部と第１の電極、第２の放熱部と第２の電極は、それぞれ異方導電性樹脂で接続され、第１の放熱部と第２の放熱部の境界部には溝が形成されていることを特徴とする請求項７から１２のいずれかに記載の半導体発光装置。 A semiconductor light-emitting device as described in any one of claims 7 to 12, characterized in that the first heat dissipation portion and the first electrode, and the second heat dissipation portion and the second electrode are each connected with an anisotropic conductive resin, and a groove is formed at the boundary between the first heat dissipation portion and the second heat dissipation portion. マウント部材上に導電性接着剤で複数の電極を固定する半導体発光装置の製造方法であって、第１の電極をマウント部材に固定した後に、第２の電極をマウント部材に固定することを特徴とする半導体発光素子の製造方法。A method for manufacturing a semiconductor light-emitting device in which multiple electrodes are fixed on a mounting member with a conductive adhesive, characterized in that after a first electrode is fixed to the mounting member, a second electrode is fixed to the mounting member. 前記マウント部材上にあらかじめ設置した、前記第１のハンダおよび第２のハンダを、第１のハンダの融点Ｔ１および第２のハンダの融点Ｔ２のいずれよりも高い温度に保持してから、マウント部材上に前記半導体発光素子チップを積載し、続いて、第１のハンダおよび第２のハンダを、Ｔ１とＴ２の中間の温度に所定時間保持し、その後、Ｔ１およびＴ２のいずれよりも低い温度に冷却する、各過程からなるダイボンディング工程を用いたことを特徴とする、請求項１４に記載の半導体発光装置の製造方法。 15. The method for manufacturing a semiconductor light-emitting device described in claim 14, characterized in that a die bonding process is used, which comprises the steps of: first, maintaining the first solder and the second solder, which have been placed on the mounting member in advance, at a temperature higher than both the melting point T1 of the first solder and the melting point T2 of the second solder; then, loading the semiconductor light-emitting element chip onto the mounting member; subsequently, maintaining the first solder and the second solder at a temperature intermediate between T1 and T2 for a predetermined time; and then cooling them to a temperature lower than both T1 and T2. 片面に複数の電極を有する半導体発光素子チップを積載するためのマウント部材であって、積載面上に複数のハンダが配置され、第１のハンダと第２のハンダの融点が異なっていることを特徴とするマウント部材。A mounting member for mounting a semiconductor light-emitting element chip having a plurality of electrodes on one side, characterized in that a plurality of solders are arranged on the mounting surface, and the first solder and the second solder have different melting points. 片面に複数の電極を有する半導体発光素子チップを積載するためのマウント部材であって、半導体発光素子チップに対向する面側で、異なる熱伝導率を持つ複数の放熱部が並列に構成され、導電性接着剤が前記複数の放熱部に配置されていることを特徴とするマウント部材。A mounting member for mounting a semiconductor light-emitting element chip having multiple electrodes on one side, characterized in that on the surface facing the semiconductor light-emitting element chip, multiple heat dissipation sections with different thermal conductivities are arranged in parallel, and conductive adhesive is arranged on the multiple heat dissipation sections.
JP31575998A 1997-11-07 1998-11-06 Manufacturing method of semiconductor light emitting device Expired - Fee Related JP4141549B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31575998A JP4141549B2 (en) 1997-11-07 1998-11-06 Manufacturing method of semiconductor light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-305485 1997-11-07
JP30548597 1997-11-07
JP31575998A JP4141549B2 (en) 1997-11-07 1998-11-06 Manufacturing method of semiconductor light emitting device

Publications (3)

Publication Number Publication Date
JPH11220218A JPH11220218A (en) 1999-08-10
JPH11220218A5 true JPH11220218A5 (en) 2005-07-28
JP4141549B2 JP4141549B2 (en) 2008-08-27

Family

ID=26564317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31575998A Expired - Fee Related JP4141549B2 (en) 1997-11-07 1998-11-06 Manufacturing method of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP4141549B2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3486900B2 (en) * 2000-02-15 2004-01-13 ソニー株式会社 Light emitting device and optical device using the same
JP2002314184A (en) * 2001-04-11 2002-10-25 Nec Corp Optical semiconductor module
JP2002374029A (en) * 2001-06-15 2002-12-26 Sony Corp Multi-beam semiconductor laser device
DE10221857A1 (en) * 2002-05-16 2003-11-27 Osram Opto Semiconductors Gmbh Process for applying a semiconductor chip on a thermal and/or electrically conducting connecting part arranged in or on a plastic housing body comprises using a soft soldering process
JP4221649B2 (en) * 2002-09-02 2009-02-12 スタンレー電気株式会社 Wavelength conversion element and manufacturing method thereof
JP4522333B2 (en) * 2005-07-01 2010-08-11 三洋電機株式会社 Manufacturing method of semiconductor laser device
JP4595929B2 (en) * 2006-11-28 2010-12-08 ソニー株式会社 Method for manufacturing light emitting device
JP2008153502A (en) * 2006-12-19 2008-07-03 Sony Corp LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND IMAGE OUTPUT DEVICE
JP4872770B2 (en) * 2007-04-12 2012-02-08 ソニー株式会社 Mounting substrate and semiconductor laser device
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR101118032B1 (en) * 2010-05-27 2012-02-24 (주)엠에스아이코리아 A Cooling Structure For LED Chip
JP5799727B2 (en) * 2011-10-06 2015-10-28 三菱電機株式会社 Multi-wavelength semiconductor laser device and method for manufacturing multi-wavelength semiconductor laser device
JP2013105973A (en) * 2011-11-16 2013-05-30 Seiko Epson Corp Light-emitting device, method for manufacturing the same, and projector
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
WO2017010818A1 (en) * 2015-07-15 2017-01-19 서울바이오시스 주식회사 Method for manufacturing light emitting diode package
KR20170009750A (en) 2015-07-15 2017-01-25 서울바이오시스 주식회사 Method of fabricating light-emitting diode package
JP6491784B1 (en) * 2018-08-03 2019-03-27 株式会社日立パワーソリューションズ Single crystal silicon carbide substrate, method for manufacturing single crystal silicon carbide substrate, and semiconductor laser
JP7564014B2 (en) * 2021-02-24 2024-10-08 浜松ホトニクス株式会社 External Cavity Laser Module
CN114784612B (en) * 2022-06-20 2022-11-11 深圳市埃尔法光电科技有限公司 Wafer arrangement method of laser chips with topological structures
CN114784613B (en) * 2022-06-20 2022-11-11 深圳市埃尔法光电科技有限公司 Laser chip with unitized dual-topology structure

Similar Documents

Publication Publication Date Title
JPH11220218A5 (en)
US6825550B2 (en) Board-on-chip packages with conductive foil on the chip surface
US6922339B2 (en) Heat dissipating structure of printed circuit board and fabricating method thereof
KR100434232B1 (en) Method and structure of attaching leadframe to heat spreader / heat slug structure
US5857767A (en) Thermal management system for L.E.D. arrays
US10319610B2 (en) Package carrier
KR101908098B1 (en) Printed circuit board, circuit, and method for the production of a circuit
KR20140024839A (en) Circuit for a light emitting component and method of manufacturing the same
CN109216214B (en) Semiconductor packaging structure and manufacturing method thereof
JP3870704B2 (en) Semiconductor device
US9614128B2 (en) Surface mountable semiconductor device
CN223414077U (en) Power module packaging structure and electronic equipment
JP2934421B2 (en) Resin encapsulated semiconductor device with heat sink
CA3036248A1 (en) Heatsink including thick film layer for uv led arrays, and methods of forming uv led arrays
JP5708359B2 (en) Semiconductor device and manufacturing method of semiconductor device
JPH08274228A (en) Semiconductor mounting board, power semiconductor device and electronic circuit device
CN103093908B (en) Power resistor
JP2009231685A (en) Power semiconductor device
US20070085173A1 (en) Method and apparatus for providing double-sided cooling of leadframe-based wire-bonded electronic packages
JPH10303470A (en) Thermoelectric cooling device
JPS6315430A (en) Manufacture of semiconductor device
JP6154987B2 (en) Semiconductor device
JP3036484B2 (en) Semiconductor device and manufacturing method thereof
JP2017157649A (en) Semiconductor device
JP3527850B2 (en) Semiconductor device