JPH11233567A - Tape with adhesive for semiconductor device, copper-clad laminate using the same, substrate for semiconductor connection, and semiconductor device - Google Patents

Abstract

[PROBLEMS] To provide a tape with an adhesive for a semiconductor device and a copper-clad laminate, a substrate for semiconductor connection, and a semiconductor device using the same, which can achieve excellent solder heat resistance and moisture resistance reliability. . An adhesive tape comprising a laminate having at least an adhesive layer on an organic insulating film, wherein the organic insulating film has a water vapor permeability of 0.04.
g / m ² / 24h / semiconductor device with adhesive, characterized in that mm or more at which the tape and the copper-clad laminate using the same, a semiconductor connecting substrate and a semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape automated bonding (TAB) type pattern processing tape, a ball grid array package (BGA), and an interface for a chip scale package (CSP) used for mounting a semiconductor integrated circuit. The present invention relates to a tape with an adhesive suitable for producing a substrate for semiconductor connection such as a poser, a copper-clad laminate using the tape, a substrate for semiconductor connection, and a semiconductor device.

[0002]

2. Description of the Related Art A method using a metal lead frame is most often used for a substrate of a semiconductor integrated circuit (IC). In recent years, however, an IC having an organic insulating film such as glass epoxy or polyimide has been used. There is an increasing number of systems using a connection substrate on which a connection conductor pattern is formed. A typical example is a tape carrier package (T) using a tape automated bonding (TAB) method.
CP).

In general, a tape with a TAB adhesive (hereinafter referred to as a TAB tape) is used as a TCP connection substrate (pattern tape). An ordinary TAB tape has a three-layer structure in which an uncured adhesive layer and a polyester film having a release property are laminated as a protective film layer on a flexible organic insulating film such as a polyimide film. It is configured.

[0004] TAB tapes include (1) perforation of sprockets and device holes, (2) heat lamination with copper foil and heat curing of an adhesive, (3) pattern formation (resist coating, etching, resist removal), ( 4) Through a processing step such as tin or gold-plating processing, it is processed into a TAB tape (pattern tape) as a connection substrate. FIG. 1 shows the shape of the pattern tape. 1 is an organic insulating film, 2 is an adhesive, 3 is a sprocket hole, 4 is a device hole, and 5 is a conductor pattern.
FIG. 2 is a cross-sectional view of one embodiment of the TCP semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 having the protective film 11, and the semiconductor integrated circuit is mounted. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. Finally, the TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7, and is mounted on an electronic device.

With the recent trend toward miniaturization and weight reduction of electronic devices, small outline packages (SOP) and quad type packages in which external connection terminals are arranged on the side surfaces of conventional packages have been developed for high-density mounting of semiconductor packages. Instead of a flat package (QFP), a BGA (ball grid grid) with external connection terminals arranged on the back of the package
Arrays) and CSPs (chip scale packages) have been used.

In BGA and CSP, a connection substrate called an interposer is indispensable, like TCP. However, in the connection method of the IC, most of the conventional TCP uses TAB gang bonding,
GA and CSP use either TAB method or wire bonding method for each package specification, application,
The difference is that they are selected depending on the design policy. FIG.
FIG. 4 is a cross-sectional view of one embodiment of the semiconductor device (BGA, CSP) of the present invention. In the figure, 12 and 20 are organic insulating films, 13 and 21 are adhesives, 14 and 22 are conductor patterns, 15 and 23 are semiconductor integrated circuits, 16 and 24 are sealing resins, 17 and 25 are gold bumps, 18 , 26 denotes a solder ball, 19 denotes a stiffener, and 27 denotes a solder resist.

The interposer referred to here is the T
Since it has the same function as the CP pattern tape, a tape with an adhesive for TAB can be used. Of course, it is advantageous to a connection method having inner leads, but it is particularly suitable for a process of laminating copper foil after mechanically punching holes for solder balls and device holes for ICs. On the other hand, since the connection is made by wire bonding, inner leads are not required, and in the process of opening holes for solder balls and device holes for ICs together with the copper foil, the copper foil that has already been laminated and the adhesive is heated and cured A laminated board may be used.

In any of the above package forms, the adhesive layer of the adhesive tape for a semiconductor device ultimately remains in the package, so that it is required to satisfy various properties such as insulation, heat resistance and adhesiveness. Is done. As electronic devices have become smaller and more dense, the pattern pitch (conductor width and conductor width) of semiconductor connection substrates has become extremely narrow, and copper foil with high insulation reliability and a narrow conductor width has been developed. There is an increasing need for an adhesive having an adhesive force (hereinafter, referred to as an adhesive force). Recently, particularly as an accelerated test for insulation reliability, a high temperature and high humidity of 130 ° C. and 85% RH or 125
Attention has been paid to the rate of decrease in insulation resistance in a state where a voltage is continuously applied at a high temperature of 150 ° C. to 150 ° C.

On the other hand, high-density mounting and automation have also been promoted in mounting components on a printed circuit board. Instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board,
The “surface mounting method” in which components are soldered to the substrate surface has become mainstream. With the shift to the surface mounting method, packages have been required to have solder heat resistance.

That is, in the conventional pin insertion mounting method,
In the soldering process, the lead portion of the package is only partially heated, but in the surface mounting method, the entire package is immersed in a heating medium and heated. As a soldering method in this surface mounting method, a solder bath immersion, a saturated vapor of an inert gas (a vapor phase method), an infrared reflow method, or the like is used. In any method, the entire package is heated to a high temperature of 210 to 270 ° C. Therefore, in a package using a conventional connection substrate as an interposer, there is a problem that swelling occurs at the time of soldering and mounting failure occurs.

It is said that the defective mounting at the time of soldering is caused by the moisture absorbed by the package up to the mounting process explosively turning into steam and expanding at the time of heating for soldering. A method is used in which the product is shipped in a dry and sealed container.

However, the method of enclosing the dry package in a container has disadvantages that the manufacturing process and the handling of the product are complicated, and the product price is high.

Based on the present situation, various improvements of the connection board have been studied. For example, it has been proposed to make a fine hole having a diameter of 0.1 mm or less in the connection board for the purpose of facilitating the removal of the absorbed moisture. Have been.

However, the method of forming a fine hole for moisture in the connection board not only has insufficient soldering heat resistance of the package but also increases the cost due to an increase in the number of processing steps and limits the wiring of the wiring on the board. Had left.

[0015]

SUMMARY OF THE INVENTION The present invention has been achieved as a result of studying to solve the problems of the above-described conventional connection board.

Accordingly, an object of the present invention is to provide an adhesive tape for a semiconductor device having excellent reliability such as solder heat resistance and humidity resistance, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device. The purpose is to provide.

[0017]

Means for Solving the Problems In order to achieve the above object, the present inventors have focused on the water vapor permeability of an organic insulating film of a tape with an adhesive for a semiconductor device, and as a result,
The present inventors have found that a tape with an adhesive for a semiconductor device having excellent solder heat resistance can be obtained, and have reached the present invention.

That is, the present invention relates to a tape with an adhesive comprising a laminate having at least an adhesive layer on an organic insulating film, wherein the water vapor permeability of the organic insulating film is 0.04 g / m ^2. / 24h / mm or more, a tape with an adhesive for a semiconductor device, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION The organic insulating film used for the adhesive tape for a semiconductor device of the present invention has a water vapor transmission rate of 0.04 g / m 2/24 h / mm or more, preferably 0.50 g / m ^2. m ² / 24h / mm or more,
Furthermore it is important that preferably 1.00g / m ² / 24h / mm or more. That is, the water vapor permeability of the film is less than ^{0.04g / m 2 / 24h / mm} , defects preventing effect implementation in the soldering step of the package can not be exhibited.

Here, the water vapor transmission rate is 38 ° C. /
It is a value measured according to ASTM D50 under the conditions of 90% RH and 24 hours.

The organic insulating film used in the present invention has a thickness of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ketone, aramid, polycarbonate, polyarylate or a composite material such as glass cloth impregnated with epoxy resin. It is a film having a thickness of 25 to 125 μm, and a plurality of films selected therefrom may be used in a laminated state. Above all, a polyimide film having flexibility is preferably used. If necessary, one or both surfaces can be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical roughening, and easy adhesion coating treatment.

Above all, a polyimide film generally synthesized by heating and ring closing a diamine and an acid anhydride is preferably used. As the diamine component used, p-phenylenediamine, 4,4′-diaminodiphenyl, 4,
4'-diamino-2,2-bis (trifluoromethyl)
Biphenyl, 2-trifluoromethyl-1,4-phenylenediamine (2,5-diaminobenzotrifluoride), 4,4'-diamino-2,2'-dichlorobiphenyl, 4,4'-diamino-3,3 '-Dimethylbiphenyl, 2,5-dimethyl-1,4-phenylenediamine, 4,4'-diamino-2,2'-bis (trifluoromethoxy) biphenyl, 2-methyl-1,4-phenylenediamine, 2 -Chloro-1,4-phenylenediamine, 4,4'-diamino-3,3'-dimethoxybiphenyl, 4,4 "-diaminoterphenyl, 4,4""-
Diamino coater phenyl, 1,4-diamino benzanilide, 2,5-diaminopyridine, 2,7-diaminofluorene, o-tolidine sulfone, 2,10-bis (4-aminophenyl) anthracene, 1,5-diaminonaphthalene 4,4'-diaminodiphenyl ether (4,4'-aminophenyl) hexafluoropropane, 4,4'-methylenedianiline, 3,4'-diaminodiphenyl ether, 1,4-bis (4-aminophenoxy) benzene, etc. Examples of the acid anhydride component include pyromellitic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-nephthalenetetracarboxylic dianhydride, 2,5,6-naphthalenetetracarboxylic dianhydride, 3,3 ', 4,4'
-Biphenyltetracarboxylic dianhydride, 3,3 ',
4,4′-benzophenonetetracarboxylic dianhydride,
2,2′-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, oxydiphthalic anhydride, 3,3 ′, 4,4′-diphenylsulfonetetracarboxylic dianhydride and the like. Can be Of these diamines and acid anhydrides, two or more diamines and acid anhydrides may be used.

The adhesive layer of the present invention is not particularly limited as long as it is excellent in insulation and bonding reliability, regardless of thermoplastic adhesive or thermosetting adhesive, but contains a thermoplastic resin (A). The used adhesive is preferably used. The thermoplastic resin (A) is effective in controlling the softening temperature, and has an adhesive strength,
It has functions such as flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. The amount of thermoplastic resin added is
Preferably 30 to 60% by weight, more preferably 35 to 60% by weight.
55% by weight.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), styrene-
Known ones such as butadiene-ethylene resin (SEBS), acrylic, polyvinyl butyral, polyamide, polyester, polyimide, polyamideimide, and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with a thermosetting resin such as a phenol resin and an epoxy resin described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved. As the thermoplastic resin, a polyamide resin (a) is preferable from the viewpoint of adhesiveness to a copper foil, flexibility, and insulating properties, and various resins can be used. In particular, a polyamide resin (a ') containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component, which gives the adhesive layer flexibility and has excellent insulating properties due to a low water absorption rate. It is suitable. Further, a polyamide resin (a ') having an amine value of 1 or more and less than 3 is preferably used. Polyamide resin containing dimer acid is obtained by polycondensation of dimer acid and diamine according to a conventional method.In this case, adipic acid other than dimer acid, azelaic acid, dicarboxylic acid such as sebacic acid is contained as a copolymer component. Is also good. Diamine is ethylenediamine,
Known materials such as hexamethylenediamine and piperazine can be used, and a mixture of two or more types may be used from the viewpoint of hygroscopicity and solubility.

In the present invention, by adding a phenol resin which is a thermosetting resin to the adhesive layer, insulation reliability, chemical resistance and strength of the adhesive layer can be further improved.

As the phenol resin (B), any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example,
Phenol, cresol, pt-butylphenol,
Nonylphenol, alkyl-substituted phenols such as p-phenylphenol, cyclic alkyl-modified phenols such as terpene and dicyclopentadiene, nitro group, halogen group, cyano group, those having a functional group containing a hetero atom such as amino group, naphthalene, anthracene And a resin comprising a polyfunctional phenol such as bisphenol F, bisphenol A, bisphenol S, resorcinol, pyrogallol, and the like. Among them, a resol type phenol resin is more preferable because it has an effect of improving the insulation resistance reduction time.

The addition amount of the phenol resin is preferably 5 to 60% by weight, more preferably 20 to 50% by weight of the adhesive layer.

It is preferable to add an epoxy resin, which is a thermosetting resin, to the adhesive layer of the present invention because the adhesive strength can be improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but is not limited to bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, dicyclopentadienediphenol, dicyclopentadienedixylenol and the like. Glycidyl ether, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane,
Epoxidized meta-xylene diamine, alicyclic epoxy and the like.

The amount of the epoxy resin added is preferably 2 to 40% by weight of the adhesive layer, more preferably 5 to 25% by weight.
It is.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, triphenylphosphine, diazabicycloundecene and the like can be used. The addition amount is 0.1 to 1 with respect to 100 parts by weight of the adhesive layer.
It is preferably 0 parts by weight.

In addition to the above components, addition of organic or inorganic components such as an antioxidant and an ion scavenger is not limited as long as the properties of the adhesive are not impaired.

In the present invention, a protective film layer is preferably provided. The protective film layer here is not particularly limited as long as it can be peeled from the adhesive surface without damaging the form of the adhesive tape for a semiconductor device before thermally laminating the copper foil. Polyester film, polyolefin film, and paper on which these are laminated.

Next, a method of manufacturing a tape with an adhesive for a semiconductor device will be described.

A paint obtained by dissolving the above adhesive composition in a solvent is applied to a flexible insulating film and dried. It is preferable to apply the adhesive layer so that the film thickness is 5 to 25 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic compound such as toluene, xylene, and chlorobenzene and an alcohol compound such as methanol, ethanol, and propanol is preferable. A protective film is laminated on the film thus obtained, and finally slit to about 35 to 158 mm. Further, the adhesive composition is applied to a protective film,
A method of drying, slitting to an arbitrary width, and then laminating the insulating film with the insulating film may be used, which is suitable when the width of the adhesive layer and the width of the insulating film are changed.

Using the adhesive tape for semiconductor device thus obtained, a copper-clad laminate or a substrate for semiconductor connection can be manufactured. Furthermore, a semiconductor device can be manufactured using these copper-clad laminates or semiconductor connection substrates.

[0036]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, a method of preparing a sample and a method of evaluating the sample will be described.

(1) Method of Making Tape with Adhesive for Semiconductor Device 100 parts by weight of polyamide resin (manufactured by Unichema: dimer acid polyamide resin “PRIADTIT 2053”),
15 parts by weight of epoxy resin (manufactured by Dainippon Ink and Chemicals, Inc.
"Epiclon" HP4032, epoxy equivalent 150),
15 parts by weight of novolak type phenol resin (PSM4326 manufactured by Gunei Chemical Co., Ltd.), resol type phenol resin 60
Parts by weight (PS2780, manufactured by Gunei Chemical Co., Ltd.) were stirred and dissolved at 30 ° C. in a mixed solvent of methanol / monochlorobenzene so as to have a concentration of 20% by weight to prepare an adhesive solution. This adhesive is applied with a bar coater to a protective film having a thickness of 25 mm.
μ polyethylene terephthalate film (Toray Industries, Inc.)
"Lumirror") and dried at 100 ° C. for 1 minute and 160 ° C. for 5 minutes to prepare an adhesive sheet. Further, the obtained adhesive sheet was applied to the organic insulating film shown in Table 1 at 120 ° C. for 1 kg.
/ Cm ² to prepare a tape with an adhesive for semiconductor devices.

(2) Method of Making Semiconductor Connection Board An 18 μm electrolytic copper foil was laminated on a tape sample with an adhesive for a semiconductor device at 140 ° C. and 1 kg / cm ² . Then, in an air oven, 80 ° C, 3 hours, 10
A heat curing treatment was sequentially performed at 0 ° C. for 5 hours, at 150 ° C. for 5 hours, and a tape with an adhesive for semiconductor devices with a copper foil was prepared. A photoresist film formation, etching, resist peeling, and gold plating were performed on the copper foil surface of the adhesive tape for a semiconductor device with the obtained copper foil by a conventional method, to prepare a test semiconductor connection substrate.

(3) Method of Making Sample for Evaluation of Solder Heat Resistance and Humidity Reliability A simulated element (9 × 9 mm) having aluminum deposited on the surface was mounted on the above-mentioned semiconductor connection substrate with a silver paste. Thereafter, molding was performed by a low-pressure transfer molding method using a Toray sealing material. Post-curing was performed at 175 ° C. × 5 hours to prepare a simulated package.

(4) Solder Heat Resistance Evaluation Method (Reflow Resistance) Twenty simulated packages prepared by the method described in (3) above were humidified at 85 ° C./85% RH for 12 hours and 24 hours, respectively, and then subjected to a maximum temperature of 240. The package was heat-treated in an IR reflow furnace at a temperature of .degree.

(5) Humidity-Reliability Evaluation Method A 121 ° C./10
The time at which disconnection occurred under PCT conditions of 0% RH was determined. Table 1 shows the results.

[0042]

[Table 1]

From the examples and comparative examples in Table 1, it can be seen that the adhesive tapes for semiconductor devices obtained by the present invention are excellent in solder heat resistance and humidity resistance reliability.

[0044]

According to the present invention, it is possible to provide a tape with an adhesive for semiconductor devices having excellent solder heat resistance and moisture resistance reliability, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device.

[Brief description of the drawings]

FIG. 1 is a perspective view of one embodiment of a semiconductor connection substrate (pattern tape) before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device (TCP) using the adhesive tape for a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention.

[Explanation of symbols]

 1,12,20 Insulating film having flexibility 2,13,21 Adhesive 3 Sprocket hole 4 Device hole 5,14,22 Conductor pattern 6 Inner lead part 7 Outer lead part 8,15,23 Semiconductor integrated circuit 9 , 16, 24 Sealing resin 10, 17, 25 Gold bump 11 Protective film 18, 26 Solder ball 19 Stiffener 27 Solder resist

Claims (14)

[Claims] 1. An adhesive tape comprising a laminate having at least an adhesive layer on an organic insulating film, wherein the water vapor transmission rate of the organic insulating film is 0.04 g / mm in terms of a film thickness of 1 mm. m ² / 24h or more, a tape with an adhesive for a semiconductor device, 2. The organic insulating film having a water vapor transmission rate of 0.5
^{2. The} tape with an adhesive for a semiconductor device according to claim 1, wherein the tape is 0 g / m 2/24 h / mm or more. 3. An organic insulating film having a water vapor transmission rate of 1.0
^{2. The} tape with an adhesive for a semiconductor device according to claim 1, wherein the tape is 0 g / m 2/24 h / mm or more. 4. The tape with an adhesive for a semiconductor device according to claim 1, wherein the adhesive layer is a thermosetting adhesive. 5. The adhesive tape for a semiconductor device according to claim 1, wherein the adhesive layer contains a thermoplastic resin (A). 6. An adhesive layer comprising a phenolic resin (B) and / or
2. The adhesive tape for a semiconductor device according to claim 1, further comprising an epoxy resin (C). 7. The tape with an adhesive for a semiconductor device according to claim 5, wherein the thermoplastic resin (A) is a polyamide resin (a). 8. A polyamide resin (a ′) wherein the polyamide resin (a) contains a dicarboxylic acid having 36 carbon atoms as an essential component.
The adhesive tape for a semiconductor device according to claim 6, wherein: 9. The semiconductor device according to claim 8, wherein the polyamide resin (a) is a polyamide resin (a ′) containing a dicarboxylic acid having 36 carbon atoms as an essential component, and has an amine value of 1 or more and less than 3. Tape with adhesive. 10. A copper-clad laminate using the adhesive tape for a semiconductor device according to claim 1. Description: 11. A semiconductor connection substrate using the adhesive tape for a semiconductor device according to claim 1. 12. A semiconductor device using the semiconductor connection substrate according to claim 11. 13. A substrate for semiconductor connection using the copper-clad laminate according to claim 10. 14. A semiconductor device using the semiconductor connection substrate according to claim 13.