JPH11234937A - Stator coil end structure of rotating electric machine - Google Patents
Stator coil end structure of rotating electric machineInfo
- Publication number
- JPH11234937A JPH11234937A JP3309198A JP3309198A JPH11234937A JP H11234937 A JPH11234937 A JP H11234937A JP 3309198 A JP3309198 A JP 3309198A JP 3309198 A JP3309198 A JP 3309198A JP H11234937 A JPH11234937 A JP H11234937A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electric field
- coil end
- semiconductive
- stator coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【課題】 回転電機の固定子コイルエンドにおいて、コ
イル導体を覆う主絶縁層上に設けられかつ、その外周部
をシールド絶縁層で覆われた半導電層先端部の電界を緩
和することで、半導電層先端部での部分放電や電界緩和
層の沿面放電を防止する回転電機の固定子コイルエンド
構造を提供する。
【解決手段】 低抵抗コロナシールド層３と電界緩和層
４との重なり部の内側に設けられた半導電層５のコイル
エンド側の先端部に電界が集中しないように、半導電層
５のコイルエンド側端部にこの端部に重ねるようにして
電界緩和層等からなる放電防止部材７を設けた。
(57) [Problem] To provide an electric field at a tip portion of a semiconductive layer provided on a main insulating layer covering a coil conductor and having an outer peripheral portion covered with a shield insulating layer at a stator coil end of a rotating electric machine. The present invention provides a stator coil end structure of a rotating electric machine, which prevents a partial discharge at a front end portion of a semiconductive layer and a creeping discharge of an electric field relaxation layer by relaxing. SOLUTION: The coil of the semiconductive layer 5 is provided so that the electric field does not concentrate on the tip end on the coil end side of the semiconductive layer 5 provided inside the overlapping portion of the low resistance corona shield layer 3 and the electric field relaxation layer 4. At the end on the end side, a discharge prevention member 7 made of an electric field relaxation layer or the like was provided so as to overlap with this end.
Description
【０００１】[0001]
【発明の属する技術分野】この発明は回転電機の固定子
コイルエンド構造に関するもので、特に固定子コイルエ
ンド内部の半導電層先端部の部分放電の防止、および固
定子コイルエンド表面部の沿面放電の防止に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stator coil end structure for a rotating electric machine, and more particularly to a method for preventing partial discharge at the tip of a semiconductive layer inside a stator coil end and creeping discharge at a stator coil end surface. It is about prevention of the.
【０００２】[0002]
【従来の技術】図１１は例えば特開昭５８−１５７３５
０号公報に記載されている従来の高圧の回転電機の固定
子コイルエンド部を示す部分断面図である。図１１にお
いて、１はＸを軸芯とするコイル導体、２はこのコイル
導体１の周囲を覆う主絶縁層、３と４はその外側を覆う
低抵抗コロナシールド層と電界緩和層、５は主絶縁層２
の一部に巻くように設けられた半導電層、６は低抵抗コ
ロナシールド層３と電界緩和層４の内側で主導電層５を
覆うシールド絶縁層である。2. Description of the Related Art FIG.
FIG. 11 is a partial cross-sectional view illustrating a stator coil end portion of a conventional high-voltage rotating electric machine described in Japanese Patent Application Publication No. 0-205. In FIG. 11, reference numeral 1 denotes a coil conductor having X as the axis core, 2 denotes a main insulating layer covering the periphery of the coil conductor 1, 3 and 4 denote a low-resistance corona shield layer and an electric field relaxation layer which cover the outside thereof, and 5 denotes a main insulating layer. Insulating layer 2
Is a semiconductive layer provided so as to be wound around a part of the shield layer, and a shield insulating layer 6 covering the main conductive layer 5 inside the low-resistance corona shield layer 3 and the electric field relaxation layer 4.
【０００３】近年、回転電機は高電圧化、単機大容量
化、および小型軽量化の傾向にある。これに伴い、固定
子コイルエンド部の電界緩和が重要となっている。そこ
で固定子コイルエンド表面に沿面放電防止のため、非線
形抵抗特性を有する電界緩和層４を低抵抗コロナシール
ド層３と当接して設けることが一般に行われている。[0003] In recent years, rotary electric machines have tended to have higher voltage, larger capacity per unit, and smaller and lighter. Accordingly, it is important to alleviate the electric field at the stator coil end. Therefore, in order to prevent creeping discharge on the surface of the stator coil, an electric field relaxation layer 4 having a non-linear resistance characteristic is generally provided in contact with the low-resistance corona shield layer 3.
【０００４】ここで、回転電機の定格電圧の上昇に伴う
交流耐圧試験電圧の上昇による沿面放電や電界緩和層４
の焼損を防止するため、図１１に示すように、低抵抗コ
ロナシールド層３と電界緩和層４との重ね目付近を含む
主絶縁層２の表面に半導電層５を設け、低抵抗コロナシ
ールド層３と電界緩和層４との重ね目付近における電力
損失を減少させることにより、重ね目付近における電界
緩和層４の温度上昇を抑制し、さらに半導電層５を覆う
シールド絶縁層６を設けている。Here, a creeping discharge or an electric field relaxation layer 4 due to an increase in the AC withstand voltage test voltage accompanying an increase in the rated voltage of the rotating electric machine.
As shown in FIG. 11, a semiconductive layer 5 is provided on the surface of the main insulating layer 2 including the vicinity of the overlap between the low-resistance corona shield layer 3 and the electric field relaxation layer 4 to prevent burnout of the low-resistance corona shield. By reducing the power loss near the overlap between the layer 3 and the electric field relaxation layer 4, the temperature rise of the electric field relaxation layer 4 near the overlap is suppressed, and a shield insulating layer 6 covering the semiconductive layer 5 is provided. I have.
【０００５】以下、このような構成の高圧の回転電機の
固定子コイルの製造方法について説明する。まず、コイ
ル導体１に例えば集成マイカからなるマイカシートに補
強材としてガラスクロスを張り合わせたマイカテープを
複数回巻き付けて主絶縁層２を形成する。その上に半導
電性を有するシートあるいはテープからなる半導電層５
を後述する低抵抗コロナシールド層３と電界緩和層４の
重ね目からコア側に入りこんだ位置から電界緩和層４の
コイルエンド側の端部を越えない範囲に設ける。Hereinafter, a method of manufacturing a stator coil for a high-voltage rotating electric machine having such a configuration will be described. First, a main insulating layer 2 is formed by winding a mica tape in which a glass cloth is adhered as a reinforcing material to a mica sheet made of, for example, a mica sheet, a plurality of times around the coil conductor 1. A semiconductive layer 5 made of a semiconductive sheet or tape thereon
Is provided in a range that does not exceed the coil end side end of the electric field relaxation layer 4 from a position where it enters the core side from the overlap of the low resistance corona shield layer 3 and the electric field relaxation layer 4 described later.
【０００６】さらにそれら全体を覆うようにマイカテー
プを複数回巻き付け、シールド絶縁層６を形成し、全体
を例えばエポキシ樹脂を用いて含浸し重合、そしてプレ
ス整形し、その後、その上に低抵抗コロナシールド層３
とこの低抵抗コロナシールド層３先端部に重ねて電界緩
和層４を設けて、固定子コイルを構成したものである。Further, a mica tape is wrapped a plurality of times so as to cover the entirety, a shield insulating layer 6 is formed, and the entirety is impregnated with, for example, an epoxy resin, polymerized, and press-formed. Shield layer 3
And an electric field relaxation layer 4 provided on the tip of the low-resistance corona shield layer 3 to form a stator coil.
【０００７】[0007]
【発明が解決しようとする課題】図１２は上記特開昭５
８−１５７３５０号公報に記載されている固定子コイル
エンド部の電界緩和構造において、高電圧をコイル導体
１に印加した場合の半導電層５とその延長上の各点にお
ける電位分布である。ただし、横軸は低抵抗コロナシー
ルド層３の先端部を０として、先端部からコイルエンド
方向への位置を示し、また点Ａは半導電層５先端の位置
を示し、縦軸は導体に印加した電圧のピーク値を１００
％とした相対値を示している。FIG. 12 shows the above-mentioned Japanese Patent Application Laid-Open No. Sho.
In the electric field alleviation structure of the stator coil end portion described in Japanese Patent Application Laid-Open No. 8-157350, a potential distribution at each point on the semiconductive layer 5 and its extension when a high voltage is applied to the coil conductor 1. Here, the horizontal axis indicates the position from the front end to the coil end direction with the front end of the low-resistance corona shield layer 3 being 0, the point A indicates the position of the front end of the semiconductive layer 5, and the vertical axis indicates the voltage applied to the conductor. The peak value of the voltage
The relative values as% are shown.
【０００８】図１２に示されるように、点Ａにおいて電
位が急激に上昇している。つまり、高電圧印加により半
導電層５先端部が高電界になることを示している。その
ため、半導電層５先端部から部分放電が発生し易い構造
になっているという問題点があった。As shown in FIG. 12, the potential at point A sharply increases. In other words, this indicates that a high electric field is applied to the tip of the semiconductive layer 5 by applying a high voltage. Therefore, there is a problem that the structure is such that a partial discharge easily occurs from the tip of the semiconductive layer 5.
【０００９】この発明は上記のような従来の問題点を解
決するためになされたもので、半導電層先端部の電界を
緩和することで、半導電層先端部の部分放電を防止する
と共に、低抵抗コロナシールド層と電界緩和層との重な
り部のジュール損を低下させ、電界緩和層の沿面放電を
抑制し、さらに、半導電層と放電防止部材をシールド絶
縁層で覆うことで主絶縁層の絶縁性能を低下させず、信
頼性の高い回転電機の高電圧化、大容量化を可能にする
回転電機の固定子コイルエンド構造を提供することを目
的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and by alleviating the electric field at the tip of the semiconductive layer, it is possible to prevent partial discharge at the tip of the semiconductive layer, Reduces the Joule loss at the overlap between the low-resistance corona shield layer and the electric field relaxation layer, suppresses the creeping discharge of the electric field relaxation layer, and furthermore, covers the semiconductive layer and the discharge prevention member with a shield insulation layer to form the main insulation layer. It is an object of the present invention to provide a stator coil end structure of a rotating electric machine which can increase the voltage and the capacity of the rotating electric machine with high reliability without lowering its insulation performance.
【００１０】[0010]
【課題を解決するための手段】上記の目的に鑑み、この
発明は、回転電機の固定子コイルエンド構造であって、
コイル導体と、このコイル導体を覆う主絶縁層と、この
主絶縁層の外部表面に設けられた低抵抗コロナシールド
層と、上記主絶縁層のコイルエンド外周部に上記低抵抗
コロナシールド層の端部と重ねて設けれられた電界に対
し抵抗値が変化する非線形抵抗特性を有する電界緩和層
と、上記低抵抗コロナシールド層と電界緩和層との重な
り部よりコア側に入った位置から上記電界緩和層のコイ
ルエンド側の端部を越えない範囲で、かつ上記主絶縁層
の表面に設けられた半導電層と、この半導電層のコイル
エンド側端部に重ねて設置し、かつ上記電界緩和層のコ
イルエンド側の端部を越えない範囲に設けた放電防止部
材と、上記半導電層と放電防止部材を覆うシールド絶縁
層と、を備えたことを特徴とする回転電機の固定子コイ
ルエンド構造にある。SUMMARY OF THE INVENTION In view of the foregoing, the present invention relates to a stator coil end structure for a rotating electric machine,
A coil conductor, a main insulating layer covering the coil conductor, a low-resistance corona shield layer provided on an outer surface of the main insulating layer, and an end of the low-resistance corona shield layer on a coil end outer peripheral portion of the main insulating layer. An electric field mitigating layer having a non-linear resistance characteristic in which a resistance value changes with respect to an electric field provided in an overlapped manner with the electric field, and the electric field mitigating from a position on the core side from an overlapping portion of the low-resistance corona shield layer and the electric field mitigating layer. A semiconductive layer provided on the surface of the main insulating layer so as not to exceed an end of the relaxing layer on the coil end side; and a semiconductive layer provided on the coil end side end of the semiconductive layer, and A stator coil for a rotating electric machine, comprising: a discharge prevention member provided in a range not exceeding an end of the buffer layer on the coil end side; and a shield insulating layer covering the semiconductive layer and the discharge prevention member. In the end structure .
【００１１】またこの発明は、上記放電防止部材が電界
に対し非線形抵抗特性を有する内部電界緩和層からなる
ことを特徴とする回転電機の固定子コイルエンド構造に
ある。The present invention also resides in a stator coil end structure of a rotating electric machine, wherein the discharge preventing member comprises an internal electric field relaxation layer having a non-linear resistance characteristic to an electric field.
【００１２】またこの発明は、上記内部電界緩和層のコ
ア側先端部からコア方向に入った位置から上記半導電層
と内部電界緩和層との重なり部までを覆うように第２半
導電層を設けたことを特徴とする回転電機の固定子コイ
ルエンド構造にある。Further, according to the present invention, the second semiconductive layer is formed so as to cover from the position of the internal electric field relaxation layer toward the core from the core-side tip to the overlapping portion of the semiconductive layer and the internal electric field relaxation layer. And a stator coil end structure for a rotating electric machine.
【００１３】またこの発明は、上記内部電界緩和層のコ
ア側先端部からコア方向に入った位置から上記半導電層
と内部電界緩和層との重なり部までを覆うように絶縁性
の熱収縮材料を設けたことを特徴とする回転電機の固定
子コイルエンド構造にある。[0013] The present invention also provides an insulating heat-shrinkable material so as to cover from the position of the internal electric field relaxation layer facing the core from the core-side tip to the overlapping portion of the semiconductive layer and the internal electric field relaxation layer. And a stator coil end structure for a rotating electric machine.
【００１４】またこの発明は、上記内部電界緩和層の材
料として、熱により収縮する非線形抵抗材料を使用する
ことを特徴とする回転電機の固定子コイルエンド構造に
ある。The present invention also provides a stator coil end structure for a rotating electric machine, wherein a non-linear resistance material that contracts by heat is used as a material of the internal electric field relaxation layer.
【００１５】またこの発明は、上記内部電界緩和層の表
面抵抗率が電界緩和層の表面抵抗率と同等以上であるこ
とを特徴とする回転電機の固定子コイルエンド構造にあ
る。The present invention also provides a stator coil end structure for a rotating electric machine, wherein the surface resistivity of the internal electric field relaxation layer is equal to or greater than the surface resistivity of the electric field relaxation layer.
【００１６】またこの発明は、上記半導電層とこれのコ
イルエンド側先端部に内部電界緩和層を設けた層を上記
シールド絶縁層内に、上記コイル導体の軸心に対して同
心状に複数層設けたことを特徴とする回転電機の固定子
コイルエンド構造にある。The present invention also provides a semiconductor device comprising the above-mentioned semiconductive layer and a layer provided with an internal electric field relaxation layer at a tip end on the coil end side, the plurality of layers being concentric with the axis of the coil conductor in the shield insulating layer. A stator coil end structure for a rotating electrical machine, characterized in that the layers are provided.
【００１７】またこの発明は、上記放電防止部材が上記
半導電層より表面抵抗率が高い第３半導電層からなるこ
とを特徴とする回転電機の固定子コイルエンド構造にあ
る。The present invention also provides a stator coil end structure for a rotating electric machine, wherein the discharge preventing member comprises a third semiconductive layer having a higher surface resistivity than the semiconductive layer.
【００１８】またこの発明は、上記第３半導電層を２段
以上としたことを特徴とする回転電機の固定子コイルエ
ンド構造にある。The present invention also provides a stator coil end structure for a rotating electric machine, wherein the third semiconductive layer has two or more stages.
【００１９】またこの発明は、上記放電防止部材が上記
半導電層のコイルエンド側端部に設けられた、上記半導
電層の端部より大きい曲率半径を有する半導電性部材か
らなることを特徴とする回転電機の固定子コイルエンド
構造にある。Further, the present invention is characterized in that the discharge preventing member is formed of a semiconductive member provided at an end of the semiconductive layer on the coil end side and having a larger radius of curvature than the end of the semiconductive layer. In the stator coil end structure of the rotating electric machine.
【００２０】またこの発明は、上記半導電性部材が、上
記半導電層のコイルエンド側端部に沿って延び、端部を
裏表から挟むように覆う半導電性キャップからなること
を特徴とする回転電機の固定子コイルエンド構造にあ
る。Further, the present invention is characterized in that the semiconductive member comprises a semiconductive cap extending along an end of the semiconductive layer on the coil end side and covering the end from the front and back. It is in the stator coil end structure of the rotating electric machine.
【００２１】またこの発明は、上記半導電性部材が、上
記半導電層のコイルエンド側端部の縁に沿って延びる半
導電性チューブからなることを特徴とする回転電機の固
定子コイルエンド構造にある。The present invention also provides a stator coil end structure for a rotating electric machine, wherein the semiconductive member comprises a semiconductive tube extending along the edge of the end of the semiconductive layer on the coil end side. It is in.
【００２２】またこの発明は、上記主絶縁層とシールド
絶縁層との比である分圧比が５０％以下であることを特
徴とする回転電機の固定子コイルエンド構造にある。The present invention also provides a stator coil end structure for a rotating electrical machine, wherein a partial pressure ratio, which is a ratio between the main insulating layer and the shield insulating layer, is 50% or less.
【００２３】またこの発明は、上記半導電層の表面抵抗
率が１０2〜１０7Ωの範囲にあることを特徴とする回転
電機の固定子コイルエンド構造にある。According to the present invention, there is provided a stator coil end structure for a rotating electric machine, wherein the semiconductive layer has a surface resistivity in a range of 10 2 to 10 7 Ω.
【００２４】[0024]
【発明の実施の形態】実施の形態１．図１はこの発明の
実施の形態１による高圧の回転電機の固定子コイルエン
ド構造を示す断面図である。固定子コイルは珪素鋼板を
回転軸方向に積層したコア(図示せず)に挿入された部分
と端部のコアから外れた部分からなる。このコアからは
ずれた部分をコイルエンド部と称し、端部方向をコイル
エンド方向と称している。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 1 of the present invention. The stator coil includes a portion inserted into a core (not shown) in which silicon steel plates are stacked in the direction of the rotation axis and a portion deviated from the core at the end. The part deviating from the core is called a coil end part, and the end direction is called a coil end direction.
【００２５】図１において１はコイル導体、２は含浸可
能な主絶縁層で、絶縁のためにコイル導体１の外周にマ
イカテープを巻回して構成されている。３は低抵抗コロ
ナシールド層、４は非線形抵抗特性を有する電界緩和
層、５は半導電層、７は非線形抵抗材料からなる放電防
止部材である内部電界緩和層、６は主絶縁層２と同じく
含浸可能なシールド絶縁層で、半導電層５と内部電界緩
和層７の外周にマイカテープを巻回して構成されてい
る。In FIG. 1, reference numeral 1 denotes a coil conductor, and 2 denotes a main insulating layer which can be impregnated. The main insulating layer is formed by winding a mica tape around the outer periphery of the coil conductor 1 for insulation. 3 is a low-resistance corona shield layer, 4 is an electric field relaxation layer having nonlinear resistance characteristics, 5 is a semiconductive layer, 7 is an internal electric field relaxation layer which is a discharge prevention member made of a non-linear resistance material, and 6 is the same as the main insulating layer 2 A shield insulating layer that can be impregnated, and is configured by winding a mica tape around the semiconductive layer 5 and the internal electric field relaxation layer 7.
【００２６】以下、このような構成の高圧回転電機の固
定子コイルの製造方法について説明する。まず、コイル
導体１に例えば集成マイカからなるマイカシートに、補
強材としてガラスクロスを張り合わせたマイカテープを
複数回巻き付け、主絶縁層２を形成する。その上に表面
抵抗率が１０2Ω程度の半導電性を有するシートあるい
はテープからなる半導電層５を後述する低抵抗コロナシ
ールド層３と電界緩和層４の重なり部からコア側に入り
込んだ位置から低抵抗コロナシールド層３の端部からコ
イルエンド側に３０ｍｍの位置まで巻き付ける。Hereinafter, a method of manufacturing the stator coil of the high-voltage rotating electric machine having such a configuration will be described. First, a mica tape made of laminated mica is wound around the coil conductor 1 a plurality of times on a mica sheet made of, for example, laminated mica, to form a main insulating layer 2. A position where a semiconductive layer 5 made of a semiconductive sheet or tape having a surface resistivity of about 10 2 Ω is inserted into the core side from an overlapping portion of a low-resistance corona shield layer 3 and an electric field relaxation layer 4 described later. From the end of the low-resistance corona shield layer 3 to the coil end side to a position of 30 mm.
【００２７】そして、電界に対し非線形抵抗特性(０.３
ｋＶ／ｍｍで１０10Ω、０.５ｋＶ／ｍｍで１０9Ω程
度)を有し、かつ０.３〜０.７ｋＶ／ｍｍの電界範囲に
おいて、後述する電界緩和層４の表面抵抗率よりも同等
以上の表面抵抗率を有する材料からなる内部電界緩和層
７を、半導電層５のコイルエンド側端部に重ね、コイル
エンド方向に１００ｍｍ以上の長さで、かつ電界緩和層
４のコイルエンド側端部をこえないように設置する。な
お、内部電界緩和層７の電界に対する表面抵抗率の傾き
と電界緩和層４の電界に対する表面抵抗率の傾きが異な
り、上記電界範囲で両者の電界−表面抵抗率特性線がク
ロスする場合は同等の抵抗率とみなす。The non-linear resistance characteristic (0.3
kV / mm at 10 10 Omega, have about 10 9 Omega) at 0.5 kV / mm, and the electric field range of 0.3~0.7kV / mm, than the surface resistivity of the electric field relaxation layer 4 described below An internal electric field relaxation layer 7 made of a material having equivalent or higher surface resistivity is superposed on the coil end side end of the semiconductive layer 5 and has a length of 100 mm or more in the coil end direction and the coil end of the electric field relaxation layer 4. Install so as not to exceed the side edge. The inclination of the surface resistivity of the internal electric field relaxation layer 7 with respect to the electric field is different from the inclination of the surface resistivity of the electric field relaxation layer 4 with respect to the electric field. Is regarded as the resistivity of
【００２８】さらにそれら全体を覆うようにマイカテー
プを複数回巻き付け、シールド絶縁層６を形成する。こ
の時、次式で決まる分圧比は１５％とする。 分圧比 ＝ シールド絶縁層６の厚さ÷(シールド絶縁層
６の厚さ＋主絶縁層２の厚さ)Further, a mica tape is wrapped a plurality of times so as to cover the whole thereof, and a shield insulating layer 6 is formed. At this time, the partial pressure ratio determined by the following equation is 15%. Voltage division ratio = thickness of shield insulating layer 6 / (thickness of shield insulating layer 6 + thickness of main insulating layer 2)
【００２９】その後、全体を例えばエポキシ樹脂を用い
て含浸し重合、そしてプレス整形し、その上に低抵抗コ
ロナシールド層３とこの低抵抗コロナシールド層３のコ
イルエンド側端部に重ねて電界緩和層４を設け、固定子
コイルを構成したものである。Thereafter, the whole is impregnated with, for example, an epoxy resin, polymerized, and press-formed. Then, the low-resistance corona shield layer 3 is superimposed on the coil end side end of the low-resistance corona shield layer 3 to reduce the electric field. Layer 4 is provided to form a stator coil.
【００３０】次にその作用効果について説明する。図２
は従来例とこの実施の形態１の固定子コイルのコイル導
体１に商用周波の交流電圧を印加した場合の、低抵抗コ
ロナシールド層３先端部からコイルエンド側に延長した
半導電層５とその延長上の各点における電位分布であ
る。ただし、横軸は低抵抗コロナシールド層３の先端部
を０として、先端部からコイルエンド方向への位置を示
している。なお、点Ａは半導電層５のコイルエンド側端
部の位置を示している。縦軸はコイル導体１に印加した
電圧のピーク値を１００％とした相対値を示している。Next, the operation and effect will be described. FIG.
Is a semi-conductive layer 5 extending from the tip of the low-resistance corona shield layer 3 to the coil end when a commercial frequency AC voltage is applied to the coil conductor 1 of the stator coil of the conventional example and the first embodiment, and It is a potential distribution at each point on the extension. However, the horizontal axis indicates the position from the tip to the coil end direction with the tip of the low-resistance corona shield layer 3 being 0. Point A indicates the position of the end of the semiconductive layer 5 on the coil end side. The vertical axis indicates a relative value with the peak value of the voltage applied to the coil conductor 1 as 100%.
【００３１】図２から半導電層５を設けている間(０か
ら点Ａまで)は従来例、この実施の形態共にほぼ電位一
定で、分圧比によって決まる値となっているが、半導電
層５先端部では従来例の場合、電位が急に立ち上がって
いるのに対し、この実施の形態の場合は非線形抵抗部が
あることにより、ある電位傾斜を持って緩やかに上昇
し、１００％電位に達している。よって、この実施の形
態の場合、半導電層５先端部に電界が集中しないため、
半導電層５先端部での部分放電の発生を抑制できる。As shown in FIG. 2, while the semiconductive layer 5 is provided (from 0 to point A), the potential is almost constant in both the conventional example and this embodiment, and the value is determined by the voltage dividing ratio. 5 In the case of the conventional example, the potential rises sharply at the tip, whereas in the case of the present embodiment, the nonlinear resistance portion causes the potential to rise gently with a certain potential gradient and reach 100% potential. Has reached. Therefore, in the case of this embodiment, since the electric field does not concentrate on the tip of the semiconductive layer 5,
The occurrence of partial discharge at the tip of the semiconductive layer 5 can be suppressed.
【００３２】また、図３は従来例とこの実施の形態１の
固定子コイルのコイル導体１に商用周波の交流電圧を印
加した場合の低抵抗コロナシールド層３先端部からコイ
ルエンド側に延長した点における固定子コイル表面のジ
ュール損密度を示す。ただし、横軸は低抵抗コロナシー
ルド層３の先端部を０として、先端部からコイルエンド
方向への位置を示す。また、点Ａは半導電層５先端の位
置を示し、縦軸は従来例を１００％とした場合の相対比
である。FIG. 3 shows the conventional example and the stator coil according to the first embodiment, in which a commercial frequency AC voltage is applied to the coil conductor 1 of the stator coil. The Joule loss density of the stator coil surface at a point is shown. Here, the horizontal axis indicates the position from the tip to the coil end direction with the tip of the low-resistance corona shield layer 3 being 0. Point A indicates the position of the tip of the semiconductive layer 5, and the vertical axis indicates the relative ratio when the conventional example is set to 100%.
【００３３】図３から低抵抗コロナシールド層３先端部
(Ｘ＝０)において、従来例に比較してこの実施の形態の
場合、ジュール損密度が大きく低下しており、電界緩和
層４における損失を小さくし、温度上昇を抑制し、電界
緩和層４での沿面放電を防止できる。From FIG. 3, the tip of the low-resistance corona shield layer 3 is shown.
In (X = 0), in the case of this embodiment, the Joule loss density is greatly reduced as compared with the conventional example, the loss in the electric field relaxation layer 4 is reduced, the temperature rise is suppressed, and the electric field relaxation layer 4 Creeping discharge can be prevented.
【００３４】また、図４はこの実施の形態１において、
内部電界緩和層７の長さを変えた固定子コイルに商用周
波の交流電圧を印加した場合の、印加電圧がピーク時の
電位分布を示す。ただし、横軸は低抵抗コロナシールド
層３の先端部を０として、先端部からコイルエンド方向
への位置を示す。また、点Ａは半導電層５先端の位置を
示し、縦軸は隣接ポイント間の電位差である。FIG. 4 shows the first embodiment.
The potential distribution when the applied voltage is at a peak when an AC voltage of a commercial frequency is applied to the stator coil in which the length of the internal electric field relaxation layer 7 is changed is shown. Here, the horizontal axis indicates the position from the tip to the coil end direction with the tip of the low-resistance corona shield layer 3 being 0. The point A indicates the position of the tip of the semiconductive layer 5, and the vertical axis indicates the potential difference between adjacent points.
【００３５】図４から、内部電界緩和層７の長さが５０
〜８０ｍｍの場合には、図中のＳで示されるように電位
が急変する点が生じ、電界緩和が十分できていないが、
１００ｍｍ以上設置した場合には、殆ど電位の変化はな
く、電界緩和されている。よって、内部電界緩和層７を
１００ｍｍ以上設置することで、電界緩和が可能であ
る。FIG. 4 shows that the length of the internal electric field relaxation layer 7 is 50
In the case of ８０80 mm, a point where the potential changes suddenly occurs as shown by S in the figure, and the electric field is not sufficiently relaxed.
When it is set to 100 mm or more, there is almost no change in potential, and the electric field is alleviated. Therefore, the electric field can be relaxed by setting the internal electric field relaxation layer 7 to 100 mm or more.
【００３６】さらに、半導電層５と内部電界緩和層７の
上をシールド絶縁層６で覆うことで、主絶縁層２の絶縁
性能を低下させない。以上のことから、この発明によれ
ば信頼性の高い回転電機の高電圧化、大容量化を可能に
できる。Furthermore, by covering the semiconductive layer 5 and the internal electric field relaxation layer 7 with the shield insulating layer 6, the insulation performance of the main insulating layer 2 is not reduced. As described above, according to the present invention, it is possible to increase the voltage and capacity of a highly reliable rotating electric machine.
【００３７】なお、半導電層５と内部電界緩和層７はテ
ープ、シートに限らずペイント状であってもよい。ま
た、半導電層５の表面抵抗率は過電流およびｔａｎδ抑
制の観点から１０2〜１０7Ωの範囲にあるものであれば
よいし、その長さも低抵抗コロナシールド層３端部から
３０ｍｍと規定はしない。The semiconductive layer 5 and the internal electric field relaxing layer 7 are not limited to tapes and sheets, but may be paint-like. The surface resistivity of the semiconductive layer 5 may be in the range of 10 2 to 10 7 Ω from the viewpoint of suppressing overcurrent and tan δ, and its length is 30 mm from the end of the low-resistance corona shield layer 3. No stipulation.
【００３８】また、内部電界緩和層７の表面抵抗率は
０.３〜０.７ｋＶ／ｍｍの電界範囲において、電界緩和
層４の表面抵抗率に比較して同等以上であればよいし、
その長さも内部電界緩和層７の表面抵抗率や分圧比によ
り最適値を導きだせばよい。The surface resistivity of the internal electric field relaxation layer 7 may be equal to or greater than the surface resistivity of the electric field relaxation layer 4 in the electric field range of 0.3 to 0.7 kV / mm.
The optimum length may be derived from the surface resistivity and the partial pressure ratio of the internal electric field relaxation layer 7.
【００３９】また、シールド絶縁層６の厚さは、コイル
導体１に印加される電圧および主絶縁層２の厚さに応じ
て５０％以下の分圧比を考慮して最適な厚さを決めれば
よいし、シールド絶縁層６を構成する絶縁材料は主絶縁
層２の材料と同じでなくとも、含浸する樹脂に相溶性の
良い絶縁材料であればよい。The optimum thickness of the shield insulating layer 6 is determined by considering the voltage applied to the coil conductor 1 and the voltage division ratio of 50% or less according to the thickness of the main insulating layer 2. In addition, the insulating material forming the shield insulating layer 6 is not necessarily the same as the material of the main insulating layer 2 but may be any insulating material having good compatibility with the resin to be impregnated.
【００４０】また、この実施の形態では半導電層５とこ
の半導電層５のコイルエンド側先端部に内部電界緩和層
７を設けた層が一層であったが、この層をコイル導体１
の軸心Ｘに関して同心状にシールド絶縁層６内に複層設
けても良い。Further, in this embodiment, the semiconductive layer 5 and the layer provided with the internal electric field relaxation layer 7 at the end of the semiconductive layer 5 on the coil end side are one layer.
May be provided in the shield insulating layer 6 concentrically with respect to the axis X.
【００４１】実施の形態２．図５はこの発明の実施の形
態２による高圧の回転電機の固定子コイルエンド構造を
示す断面図である。図５において１２は半導電層５と同
じ抵抗を持つ第２半導電層である。Embodiment 2 FIG. 5 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 2 of the present invention. In FIG. 5, reference numeral 12 denotes a second semiconductive layer having the same resistance as the semiconductive layer 5.
【００４２】以下、このような構成の高圧の回転電機の
固定子コイルの製造方法について説明する。まず、コイ
ル導体１に例えば集成マイカからなるマイカシートに、
補強材としてガラスクロスを張り合わせたマイカテープ
を複数回巻き付け、主絶縁層２を形成する。その上に表
面抵抗率が１０2〜１０7Ω程度の半導電性を有するシー
トあるいはテープからなる半導電層５を、低抵抗コロナ
シールド層３と電界緩和層４の重なり目からコア側に入
り込んだ位置から低抵抗コロナシールド層３の端部から
コイルエンド側に３０ｍｍの位置まで巻き付ける。Hereinafter, a method of manufacturing the stator coil of the high-voltage rotating electric machine having such a configuration will be described. First, for example, a mica sheet made of laminated mica is used for the coil conductor 1,
A main insulating layer 2 is formed by wrapping a mica tape with a glass cloth attached as a reinforcing material a plurality of times. A semiconductive layer 5 made of a semiconductive sheet or tape having a surface resistivity of about 10 2 to 10 7 Ω is placed on the core side from the overlap between the low-resistance corona shield layer 3 and the electric field relaxation layer 4. It is wound from the end of the low resistance corona shield layer 3 to the position of 30 mm from the end of the low resistance corona shield layer 3 to the coil end side.
【００４３】そして、半導電層５の先端部に電界に対し
非線形抵抗特性材料からなる内部電界緩和層７を、半導
電層５のコイルエンド側端部に重ね、コイルエンド方向
に１００ｍｍ以上の長さで、かつ電界緩和層４のコイル
エンド側端部をこえないように設置する。Then, an internal electric field relaxation layer 7 made of a material having a non-linear resistance characteristic to an electric field is superimposed on the tip of the semiconductive layer 5 on the end of the semiconductive layer 5 on the coil end side, and the length is 100 mm or more in the coil end direction. By the way, it is installed so as not to exceed the end of the electric field relaxation layer 4 on the coil end side.
【００４４】その後、内部電界緩和層７のコア側先端部
からコア方向に２０ｍｍの位置から、半導電層５と内部
電界緩和層７との重なり部を覆うように第２半導電層１
２を巻回し、さらにそれら全体を覆うように、マイカテ
ープを最適な分圧比(但し、５０％以下)になるように複
数回巻き付け、シールド絶縁層６を形成し、全体を例え
ばエポキシ樹脂を用いて含浸し重合、そしてプレス整形
し、その後、その上に低抵抗コロナシールド層３とこの
低抵抗コロナシールド層３のコイルエンド側端部に重ね
て電界緩和層４を設け、固定子コイルを構成したもので
ある。Thereafter, the second semiconductive layer 1 is covered with the second semiconductive layer 1 so as to cover the overlapping portion between the semiconductive layer 5 and the internal electric field relaxing layer 7 from a position 20 mm in the core direction from the core-side tip of the internal electric field relaxing layer 7.
2 and a mica tape is wound a plurality of times so as to cover the whole thereof so as to have an optimum partial pressure ratio (however, 50% or less) to form the shield insulating layer 6, and the whole is made of, for example, epoxy resin. Impregnation, polymerization, and press shaping, and thereafter, a low resistance corona shield layer 3 and an electric field relaxation layer 4 are provided on the coil end side end of the low resistance corona shield layer 3 to form a stator coil. It was done.
【００４５】次にその作用効果について説明する。この
実施例の形態では、内部電界緩和層７の先端部を半導電
層５と第２半導電層１２が挟む構造になっている。その
ため半導電層５、１２と内部電界緩和層７との重なり部
の接触が良くなり、両層間を確実に電気的に接続でき、
安定した電界緩和効果が得られる。Next, the operation and effect will be described. In this embodiment, the structure is such that the tip of the internal electric field relaxation layer 7 is sandwiched between the semiconductive layer 5 and the second semiconductive layer 12. Therefore, the contact of the overlapping portion between the semiconductive layers 5 and 12 and the internal electric field relaxation layer 7 is improved, and both layers can be reliably electrically connected.
A stable electric field relaxation effect is obtained.
【００４６】なお、この実施の形態２では半導電層５と
この半導電層５のコイルエンド側先端部に内部電界緩和
層７を設け、かつその重なり部を第２半導電層１２で覆
った層が一層であったが、この層をコイル導体１の軸心
の関して同心状にシールド絶縁層６内に複層設けても良
い。In the second embodiment, the semiconductive layer 5 and the internal electric field relaxation layer 7 are provided at the tip of the semiconductive layer 5 on the coil end side, and the overlapping portion is covered with the second semiconductive layer 12. Although the number of layers is one, a plurality of layers may be provided in the shield insulating layer 6 concentrically with respect to the axis of the coil conductor 1.
【００４７】また、導電性を確実にするためにこの実施
の形態の第２半導電層１２の替わりに、コイルの乾燥温
度あるいは樹脂の重合温度で熱収縮する絶縁性材料１２
ａを内部電界緩和層７と半導電層５の重なり部の外周に
設けても良い。また、内部電界緩和層７に熱収縮性のあ
る例えば基材にポリエステル不織布を使ったＳｉＣテー
プやシートを使用してもよい。In order to ensure conductivity, instead of the second semiconductive layer 12 of this embodiment, an insulating material 12 which is thermally shrunk at the drying temperature of the coil or the polymerization temperature of the resin is used.
a may be provided on the outer periphery of the overlapping portion between the internal electric field relaxation layer 7 and the semiconductive layer 5. Further, a heat-shrinkable SiC tape or sheet using, for example, a polyester non-woven fabric as a base material may be used for the internal electric field relaxation layer 7.
【００４８】実施の形態３．図６はこの発明の実施の形
態３による高圧の回転電機の固定子コイルエンド構造を
示す断面図である。図６において、９は半導電層５より
も表面抵抗率が高く、半導電層５のコイルエンド方向端
部と電気的に接続された放電防止部材である第３半導電
層である。Embodiment 3 FIG. 6 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 3 of the present invention. In FIG. 6, reference numeral 9 denotes a third semiconductive layer which is a discharge prevention member having a higher surface resistivity than the semiconductive layer 5 and electrically connected to the end of the semiconductive layer 5 in the coil end direction.
【００４９】以下、このような構成の高圧の回転電機の
固定子コイルの製造方法について説明する。まず、コイ
ル導体１に例えば集成マイカからなるマイカシートに、
補強材としてガラスクロスを張り合わせたマイカテープ
を複数回巻き付け、主絶縁層２を形成する。その上に表
面抵抗率が１０2〜１０7Ω程度の半導電性を有するシー
トあるいはテープからなる半導電層５を、低抵抗コロナ
シールド層３と電界緩和層４の重なり部からコア側に入
り込んだ位置から低抵抗コロナシールド層３先端からコ
イルエンド側に３０ｍｍの位置まで巻き付ける。Hereinafter, a method of manufacturing a stator coil for a high-voltage rotating electric machine having such a configuration will be described. First, for example, a mica sheet made of laminated mica is used for the coil conductor 1,
A main insulating layer 2 is formed by wrapping a mica tape with a glass cloth attached as a reinforcing material a plurality of times. A semiconductive layer 5 made of a semiconductive sheet or tape having a surface resistivity of about 10 2 to 10 7 Ω is introduced on the core side from the overlapping portion of the low-resistance corona shield layer 3 and the electric field relaxation layer 4. It winds from the tip of the low resistance corona shield layer 3 to the position of 30 mm from the front end to the coil end side.
【００５０】そして、半導電層５のコイルエンド方向端
部に第３半導電層９を重ねて設置する。そして、それら
全体を覆うようにマイカテープを最適な分圧比(但し、
５０％以下)になるように複数回巻き付け、シールド絶
縁層６を形成し、全体を例えばエポキシ樹脂を用いて含
浸し重合、プレス整形し、その後、その上に低抵抗コロ
ナシールド層３とこれの先端部に当接して電界緩和層４
を設けて、固定子コイルを構成したものである。Then, the third semiconductive layer 9 is placed on the end of the semiconductive layer 5 in the coil end direction. Then, the mica tape is divided into the optimal partial pressure ratio (however,
(50% or less) to form a shield insulating layer 6, and the whole is impregnated with, for example, an epoxy resin, polymerized and press-formed, and then the low-resistance corona shield layer 3 and the Electric field relaxation layer 4 in contact with the tip
Are provided to constitute a stator coil.
【００５１】次にその作用効果について説明する。ここ
で半導電層５、第３半導電層９の表面抵抗率をそれぞれ
Ｒ1、Ｒ２Ωとする。この実施の形態の構成の場合、半
導電層の表面抵抗率はＲ1＜Ｒ２であり、コイルエンド
方向に行くに従って高くなり、第３半導電層９の先端部
では高抵抗になっている。そのため、第３半導電層９端
部では電界が小さくなり、部分放電を防止することが可
能となる。さらに、半導電層５および第３半導電層９の
上をシールド絶縁層６で覆うことで主絶縁層２の絶縁性
能を低下させない。なお、第３半導電層は１段のみなら
ず２段以上にしても良い。ただし、その場合、後段の表
面抵抗率は前段よりも高くなくてはならない。Next, the operation and effect will be described. Here, the surface resistivity of the semiconductive layer 5 and the third semiconductive layer 9 is defined as R1 and R2Ω, respectively. In the case of the configuration of this embodiment, the surface resistivity of the semiconductive layer is R1 <R2, and increases in the direction of the coil end, and the tip of the third semiconductive layer 9 has high resistance. Therefore, the electric field is reduced at the end of the third semiconductive layer 9, and partial discharge can be prevented. Furthermore, by covering the semiconductive layer 5 and the third semiconductive layer 9 with the shield insulating layer 6, the insulating performance of the main insulating layer 2 is not reduced. The third semiconductive layer may be formed not only in one step but also in two or more steps. However, in that case, the surface resistivity of the subsequent stage must be higher than that of the preceding stage.
【００５２】実施の形態４．図７はこの発明の実施の形
態４による高圧の回転電機の固定子コイルエンド構造を
示す断面図である。図７において１０は例えば半導電性
のゴムで整形された半導電性部材である半導電性キャッ
プである。図８はこの実施の形態に係わる半導電性キャ
ップ１０を示す一部を断面で示す斜視図である。Embodiment 4 FIG. FIG. 7 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 4 of the present invention. In FIG. 7, reference numeral 10 denotes a semiconductive cap which is a semiconductive member formed of, for example, semiconductive rubber. FIG. 8 is a perspective view, partially in section, showing a semiconductive cap 10 according to this embodiment.
【００５３】以下、このような構成の高圧の回転電機の
固定子コイルの製造方法について説明する。まず、コイ
ル導体１に例えば集成マイカからなるマイカシートに、
補強材としてガラスクロスを張り合わせたマイカテープ
を複数回巻き付け、主絶縁層２を形成する。その上に表
面抵抗率が１０2〜１０7Ω程度の半導電性を有するシー
トあるいはテープからなる半導電層５を低抵抗コロナシ
ールド層３と電界緩和層４の重なり部からコア側に入り
込んだ位置から低抵抗コロナシールド層３先端からコイ
ルエンド側に３０ｍｍの位置まで巻き付ける。Hereinafter, a method of manufacturing the stator coil of the high-voltage rotating electric machine having such a configuration will be described. First, for example, a mica sheet made of laminated mica is used for the coil conductor 1,
A main insulating layer 2 is formed by wrapping a mica tape with a glass cloth attached as a reinforcing material a plurality of times. A semiconductive layer 5 made of a semiconductive sheet or tape having a surface resistivity of about 10 2 to 10 7 Ω was introduced into the core side from the overlapping portion of the low-resistance corona shield layer 3 and the electric field relaxation layer 4. From the position, it is wound up to a position of 30 mm from the tip of the low-resistance corona shield layer 3 to the coil end side.
【００５４】そして、半導電層５の先端部に例えば抵抗
が１０2〜１０7Ω程度の半導電性ゴムを整形したキャッ
プ１０をはめ込み、さらにそれら全体を覆うようにマイ
カテープを複数回巻き付け、シールド絶縁層６を形成
し、全体を例えばエポキシ樹脂を用いて含浸し重合、そ
してプレス整形し、その後、その上に低抵抗コロナシー
ルド層３とこれの先端部に当接して電界緩和層４を設け
て、固定子コイルを構成したものである。Then, a cap 10 formed by shaping a semiconductive rubber having a resistance of, for example, about 10 2 to 10 7 Ω is fitted on the tip of the semiconductive layer 5, and a mica tape is wound a plurality of times so as to cover the entirety. A shield insulating layer 6 is formed, the whole is impregnated with, for example, an epoxy resin, polymerized, and press-formed. After that, the low-resistance corona shield layer 3 and the electric field relaxation layer 4 are brought into contact with the tip of the low-resistance corona shield layer 3. And a stator coil is provided.
【００５５】次にその作用効果について説明する。半導
電層５の先端部は半導電性キャップ１０により曲率半径
を大きくとってあるため、電界集中が緩和され、部分放
電を防止することが可能となる。さらに、半導電層５お
よび半導電性キャップ１０をシールド絶縁層６で覆うこ
とで主絶縁層２の絶縁性能を低下させない。Next, the operation and effect will be described. Since the radius of curvature of the tip of the semiconductive layer 5 is increased by the semiconductive cap 10, electric field concentration is reduced, and partial discharge can be prevented. Further, by covering the semiconductive layer 5 and the semiconductive cap 10 with the shield insulating layer 6, the insulation performance of the main insulating layer 2 is not reduced.
【００５６】なお、上記構成では半導電層の先端部は半
導電性キャップ１０をはめ込んだが、図９および図１０
に示すような断面が半円形の半導電性チューブ１１を、
図９に示すように、半導電層５の先端外周部に巻いても
良い。また、半導電層５のコイルエンド側先端に半導電
性キャップ１０あるいは半導電性チューブ１１を設けた
層を同心状に複数層、シールド絶縁層６内部に設けても
良い。In the above configuration, the semiconductive cap 10 is fitted at the tip of the semiconductive layer.
A semiconductive tube 11 having a semicircular cross section as shown in FIG.
As shown in FIG. 9, the semiconductive layer 5 may be wound around the outer periphery of the tip. Also, a plurality of layers in which the semiconductive cap 10 or the semiconductive tube 11 is provided at the end of the semiconductive layer 5 on the coil end side may be provided concentrically inside the shield insulating layer 6.
【００５７】[0057]
【発明の効果】以上のようにこの発明では、回転電機の
固定子コイルエンド構造であって、コイル導体と、この
コイル導体を覆う主絶縁層と、この主絶縁層の外部表面
に設けられた低抵抗コロナシールド層と、上記主絶縁層
のコイルエンド外周部に上記低抵抗コロナシールド層の
端部と重ねて設けれられた電界に対し抵抗値が変化する
非線形抵抗特性を有する電界緩和層と、上記低抵抗コロ
ナシールド層と電界緩和層との重なり部よりコア側に入
った位置から上記電界緩和層のコイルエンド側の端部を
越えない範囲で、かつ上記主絶縁層の表面に設けられた
半導電層と、この半導電層のコイルエンド側端部に重ね
て設置し、かつ上記電界緩和層のコイルエンド側の端部
を越えない範囲に設けた放電防止部材と、上記半導電層
と放電防止部材を覆うシールド絶縁層と、を備えたもの
で、放電防止部材により半導電層先端部の電界を緩和す
ることで、半導電層先端部での部分放電を防止すると供
に、低抵抗コロナシールド層と電界緩和層との重なり部
のジュール損を低下させ、電界緩和層の沿面放電を抑制
し、さらにそれら総てをシールド絶縁層で覆うことで主
絶縁層の絶縁性能を低下させず、信頼性の高い回転電機
の高電圧化、大容量化を可能にする。As described above, according to the present invention, there is provided a stator coil end structure for a rotating electric machine, comprising a coil conductor, a main insulating layer covering the coil conductor, and an outer surface of the main insulating layer. A low-resistance corona shield layer, and an electric field relaxation layer having a non-linear resistance characteristic in which a resistance value changes with respect to an electric field provided so as to overlap an end of the low-resistance corona shield layer on the outer periphery of the coil end of the main insulating layer. Provided on the surface of the main insulating layer within a range not exceeding the coil end side end of the electric field relaxation layer from a position on the core side from the overlapping portion of the low resistance corona shield layer and the electric field relaxation layer. A semi-conductive layer, a discharge prevention member provided so as to overlap with an end of the semi-conductive layer on the coil end side, and provided in a range not exceeding an end of the electric field relaxation layer on the coil end side; And discharge prevention member And a shield insulating layer, which reduces the electric field at the tip of the semi-conductive layer by the discharge prevention member, thereby preventing partial discharge at the tip of the semi-conductive layer and providing a low-resistance corona shield layer. It reduces the Joule loss at the overlapping part with the electric field relaxation layer, suppresses the creeping discharge of the electric field relaxation layer, and furthermore, all of them are covered with the shield insulation layer so that the insulation performance of the main insulation layer is not reduced, High voltage and large capacity of rotating electric machines can be realized.
【００５８】特にこの発明では、上記放電防止部材を電
界に対し非線形抵抗特性を有する内部電界緩和層とした
ので、半導電層先端部に電界を集中させないため半導電
層先端部での部分放電を抑制でき、また電界緩和層にお
けるジュール損密度を小さくし、温度上昇を抑制し、電
界緩和層での沿面放電を防止できる。In particular, in the present invention, since the discharge preventing member is an internal electric field relaxation layer having a non-linear resistance characteristic with respect to the electric field, the partial discharge at the front end of the semiconductive layer is prevented so that the electric field is not concentrated at the front end of the semiconductive layer. In addition, the Joule loss density in the electric field relaxation layer can be reduced, the temperature rise can be suppressed, and creeping discharge in the electric field relaxation layer can be prevented.
【００５９】またこの発明では、上記内部電界緩和層の
コア側先端部からコア方向に入った位置から上記半導電
層と内部電界緩和層との重なり部までを覆うように第２
半導電層を設けたので、内部電界緩和層の先端部を半導
電層と第２半導電層が挟む構造になっているので、半導
電層と内部電界緩和層との重なり部の接触が良くなり、
両層間を確実に電気的に接続でき、安定した電界緩和効
果が得られる。Further, according to the present invention, the second electric field reducing layer is formed so as to cover the portion from the front end of the internal electric field relaxing layer toward the core to the overlapping portion between the semiconductive layer and the internal electric field relaxing layer.
Since the semiconductive layer is provided, the tip of the internal electric field relaxing layer is sandwiched between the semiconductive layer and the second semiconductive layer, so that the overlapping portion between the semiconductive layer and the internal electric field relaxing layer has good contact. Become
Both layers can be reliably electrically connected, and a stable electric field relaxation effect can be obtained.
【００６０】またこの発明では、上記内部電界緩和層の
コア側先端部からコア方向に入った位置から上記半導電
層と内部電界緩和層との重なり部までを覆うように絶縁
性の熱収縮材料を設けたので、半導電層と内部電界緩和
層との重なり部の接触が良くなり、両層間を確実に電気
的に接続でき、安定した電界緩和効果が得られる。Further, according to the present invention, an insulating heat-shrinkable material is provided so as to cover from the position in the core direction from the core-side tip of the internal electric field relaxation layer to the overlapping portion of the semiconductive layer and the internal electric field relaxation layer. Is provided, the contact of the overlapping portion between the semiconductive layer and the internal electric field relaxation layer is improved, the two layers can be reliably electrically connected, and a stable electric field relaxation effect can be obtained.
【００６１】またこの発明では、上記内部電界緩和層の
材料として、熱により収縮する非線形抵抗材料を使用す
るようにしたので、非線形抵抗材料であるため、半導電
層先端部の電界緩和を行うと共に、熱収縮により半導電
層と内部電界緩和層との接触がよくなり、両層間を確実
に電気的に接続できる。Further, in the present invention, as the material of the internal electric field relaxation layer, a non-linear resistance material which contracts by heat is used. In addition, the contact between the semiconductive layer and the internal electric field relaxation layer is improved by heat shrinkage, and both layers can be reliably electrically connected.
【００６２】またこの発明では、上記内部電界緩和層の
表面抵抗率が電界緩和層の表面抵抗率と同等以上である
ようにしたことにより、半導電層先端部に電界を集中さ
せず半導電層先端部での部分放電を抑制でき、また電界
緩和層におけるジュール損密度を小さくし、温度上昇を
抑制し、電界緩和層での沿面放電を防止できる。Further, in the present invention, the surface resistivity of the internal electric field relaxation layer is equal to or greater than the surface resistivity of the electric field relaxation layer, so that the electric field is not concentrated at the tip of the semiconductive layer. Partial discharge at the tip can be suppressed, the Joule loss density in the electric field relaxation layer can be reduced, temperature rise can be suppressed, and creeping discharge in the electric field relaxation layer can be prevented.
【００６３】またこの発明では、上記半導電層とこれの
コイルエンド側先端部に内部電界緩和層を設けた層を上
記シールド絶縁層内に、上記コイル導体の軸心に対して
同心状に複数層設けたことにより、上記部分放電および
沿面放電をより一層防止できる。According to the present invention, a plurality of the semiconductive layers and a layer provided with an internal electric field relaxation layer at the end of the coil end side thereof are provided in the shield insulating layer concentrically with respect to the axis of the coil conductor. The provision of the layer can further prevent the partial discharge and the creeping discharge.
【００６４】またこの発明では、上記放電防止部材を上
記半導電層より表面抵抗率が高い第３半導電層としたの
で、表面抵抗率がコイルエンド方向に行くに従って高く
なり、第３半導電層の先端部では高抵抗になり、そのた
め第３半導電層端部では電位差が小さくなり、部分放電
を防止することが可能となる。In the present invention, the discharge preventing member is a third semiconductive layer having a higher surface resistivity than the semiconductive layer. Therefore, the surface resistivity increases toward the coil end, and the third semiconductive layer becomes higher. Has a high resistance at the end of the third semiconductive layer, so that the potential difference is small at the end of the third semiconductive layer, and partial discharge can be prevented.
【００６５】またこの発明では、上記第３半導電層を２
段以上としたので、より部分放電防止効果が向上する。In the present invention, the third semiconductive layer is
Since the number of steps is more than one, the effect of preventing partial discharge is further improved.
【００６６】またこの発明では、上記放電防止部材を上
記半導電層のコイルエンド側端部に設けられた、上記半
導電層の端部より大きい曲率半径を有する半導電性部材
からなるものとしたので、半導電層先端部に電界を集中
させないため半導電層先端部での部分放電を抑制でき
る。In the present invention, the discharge preventing member is formed of a semiconductive member provided at the end of the semiconductive layer on the coil end side and having a larger radius of curvature than the end of the semiconductive layer. Therefore, since the electric field is not concentrated at the tip of the semiconductive layer, partial discharge at the tip of the semiconductive layer can be suppressed.
【００６７】またこの発明では、上記半導電性部材を上
記半導電層のコイルエンド側端部に沿って延び、端部を
裏表から挟むように覆う半導電性キャップで構成したの
で、容易に実現を可能にした。Further, in the present invention, the semiconductive member is constituted by a semiconductive cap which extends along the end of the semiconductive layer on the coil end side and covers the end so as to be sandwiched from the front and back, so that it is easily realized. Enabled.
【００６８】またこの発明では、上記半導電性部材を上
記半導電層のコイルエンド側端部の縁に沿って延びる半
導電性チューブで構成したので、より容易に実現を可能
にした。Further, in the present invention, since the semiconductive member is formed of a semiconductive tube extending along the edge of the end of the semiconductive layer on the coil end side, it is possible to realize the semiconductor device more easily.
【００６９】またこの発明では、上記主絶縁層とシール
ド絶縁層との比である分圧比が５０％以下であることと
して、上記の効果を実現可能とした。Further, in the present invention, the above-described effect can be realized by setting the partial pressure ratio, which is the ratio between the main insulating layer and the shield insulating layer, to 50% or less.
【００７０】またこの発明では、上記半導電層の表面抵
抗率が１０2〜１０7Ωの範囲にあることとして、上記の
効果を実現可能とした。Further, according to the present invention, the above-mentioned effect can be realized assuming that the surface resistivity of the semiconductive layer is in the range of 10 2 to 10 7 Ω.
【図１】 この発明の実施の形態１による高圧の回転電
機の固定子コイルエンド構造を示す断面図である。FIG. 1 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 1 of the present invention.
【図２】 従来例と実施の形態１の固定子コイルエンド
内部の電位分布を示す図である。FIG. 2 is a diagram showing a potential distribution inside a stator coil end according to a conventional example and the first embodiment.
【図３】 従来例と実施の形態１の固定子コイルエンド
表面のジュール損密度を示す図である。FIG. 3 is a diagram showing Joule loss densities of stator coil end surfaces according to a conventional example and the first embodiment.
【図４】 この発明の実施の形態１において内部電界緩
和層の長さを変化させた場合の固定子コイルエンド内部
の電位差を示す図である。FIG. 4 is a diagram showing a potential difference inside a stator coil end when the length of an internal electric field relaxation layer is changed in the first embodiment of the present invention.
【図５】 この発明の実施の形態２による高圧の回転電
機の固定子コイルエンド構造を示す断面図である。FIG. 5 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 2 of the present invention.
【図６】 この発明の実施の形態３による高圧の回転電
機の固定子コイルエンド構造を示す断面図である。FIG. 6 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 3 of the present invention.
【図７】 この発明の実施の形態４による高圧の回転電
機の固定子コイルエンド構造を示す断面図である。FIG. 7 is a sectional view showing a stator coil end structure of a high-voltage rotating electric machine according to Embodiment 4 of the present invention.
【図８】 図７の半導電性キャップを示す一部断面で示
す斜視図である。8 is a perspective view showing a partial cross section of the semiconductive cap of FIG. 7;
【図９】 この発明の実施の形態４による別の高圧の回
転電機の固定子コイルエンド構造を示す断面図である。FIG. 9 is a cross-sectional view showing a stator coil end structure of another high-voltage rotating electric machine according to Embodiment 4 of the present invention.
【図１０】 図９の半導電性チューブを示す一部断面で
示す斜視図である。FIG. 10 is a perspective view showing a partial cross section of the semiconductive tube of FIG. 9;
【図１１】 従来の高圧の回転電機の固定子コイルエン
ド部の構成を示す部分断面図である。FIG. 11 is a partial cross-sectional view showing a configuration of a stator coil end portion of a conventional high-voltage rotating electric machine.
【図１２】 従来の高圧の回転電機の固定子コイルエン
ド内部の電位分布を示す図である。FIG. 12 is a diagram showing a potential distribution inside a stator coil end of a conventional high-voltage rotating electric machine.
１ コイル導体、２ 主絶縁層、３ 低抵抗コロナシー
ルド層、４ 電界緩和層、５ 半導電層、６ シールド
絶縁層、７ 内部電界緩和層(放電防止部材)、９ 第３
半導電層(放電防止部材)、１０ 半導電性キャップ(半
導電性部分)、１１ 半導電性チューブ(半導電性部
分)、１２ 第２半導電層、１２ａ 熱収縮絶縁材料。Reference Signs List 1 coil conductor, 2 main insulating layer, 3 low-resistance corona shield layer, 4 electric field relaxation layer, 5 semiconductive layer, 6 shield insulation layer, 7 internal electric field relaxation layer (discharge prevention member), 9th
Semiconductive layer (discharge prevention member), 10 semiconductive cap (semiconductive part), 11 semiconductive tube (semiconductive part), 12 second semiconductive layer, 12a heat-shrink insulating material.
Claims (14)
って、 コイル導体と、 このコイル導体を覆う主絶縁層と、 この主絶縁層の外部表面に設けられた低抵抗コロナシー
ルド層と、 上記主絶縁層のコイルエンド外周部に上記低抵抗コロナ
シールド層の端部と重ねて設けれられた電界に対し抵抗
値が変化する非線形抵抗特性を有する電界緩和層と、 上記低抵抗コロナシールド層と電界緩和層との重なり部
よりコア側に入った位置から上記電界緩和層のコイルエ
ンド側の端部を越えない範囲で、かつ上記主絶縁層の表
面に設けられた半導電層と、 この半導電層のコイルエンド側端部に重ねて設置し、か
つ上記電界緩和層のコイルエンド側の端部を越えない範
囲に設けた放電防止部材と、 上記半導電層と放電防止部材を覆うシールド絶縁層と、 を備えたことを特徴とする回転電機の固定子コイルエン
ド構造。1. A stator coil end structure for a rotating electric machine, comprising: a coil conductor; a main insulating layer covering the coil conductor; a low-resistance corona shield layer provided on an outer surface of the main insulating layer; An electric field relaxation layer having a non-linear resistance characteristic in which a resistance value changes with respect to an electric field provided on an end portion of the low-resistance corona shield layer on an outer peripheral portion of a coil end of the main insulating layer; A semiconductive layer provided on a surface of the main insulating layer in a range not exceeding a coil end side end of the electric field relaxation layer from a position on the core side with respect to the overlapping portion with the electric field relaxation layer; A discharge prevention member provided so as to overlap with the coil end side end of the conductive layer and not to exceed the coil end side end of the electric field relaxation layer; and a shield insulation covering the semiconductive layer and the discharge prevention member. Layers and The stator coil end structure of a rotating electric machine characterized by comprising.
抗特性を有する内部電界緩和層からなることを特徴とす
る請求項１に記載の回転電機の固定子コイルエンド構
造。2. The stator coil end structure for a rotating electric machine according to claim 1, wherein said discharge preventing member comprises an internal electric field relaxation layer having a non-linear resistance characteristic to an electric field.
コア方向に入った位置から上記半導電層と内部電界緩和
層との重なり部までを覆うように第２半導電層を設けた
ことを特徴とする請求項２に記載の回転電機の固定子コ
イルエンド構造。3. A second semiconductive layer is provided so as to cover from the position of the internal electric field alleviating layer from the core-side tip portion toward the core to the overlapping portion between the semiconductive layer and the internal electric field alleviating layer. The stator coil end structure for a rotating electric machine according to claim 2, characterized in that:
コア方向に入った位置から上記半導電層と内部電界緩和
層との重なり部までを覆うように絶縁性の熱収縮材料を
設けたことを特徴とする請求項２に記載の回転電機の固
定子コイルエンド構造。4. An insulating heat-shrinkable material is provided so as to cover a portion of the internal electric field relaxation layer from the core-side tip portion toward the core to a portion where the semiconductive layer overlaps the internal electric field relaxation layer. The stator coil end structure for a rotating electric machine according to claim 2, characterized in that:
より収縮する非線形抵抗材料を使用することを特徴とす
る請求項２に記載の回転電機の固定子コイルエンド構
造。5. The stator coil end structure for a rotating electric machine according to claim 2, wherein a nonlinear resistance material that contracts by heat is used as a material of the internal electric field relaxation layer.
緩和層の表面抵抗率と同等以上であることを特徴とする
請求項２ないし５のいずれかに記載の回転電機の固定子
コイルエンド構造。6. The stator coil end of a rotating electric machine according to claim 2, wherein the surface resistivity of the internal electric field relaxation layer is equal to or greater than the surface resistivity of the electric field relaxation layer. Construction.
端部に内部電界緩和層を設けた層を上記シールド絶縁層
内に、上記コイル導体の軸心に対して同心状に複数層設
けたことを特徴とする請求項２ないし６のいずれかに記
載の回転電機の固定子コイルエンド構造。7. A plurality of said semiconductive layers and a layer having an internal electric field relaxation layer provided at a tip end on a coil end side thereof are provided in said shield insulating layer concentrically with respect to an axis of said coil conductor. The stator coil end structure for a rotating electric machine according to any one of claims 2 to 6, wherein:
面抵抗率が高い第３半導電層からなることを特徴とする
請求項１に記載の回転電機の固定子コイルエンド構造。8. The stator coil end structure for a rotating electric machine according to claim 1, wherein said discharge preventing member is formed of a third semiconductive layer having a higher surface resistivity than said semiconductive layer.
を特徴とする請求項８に記載の回転電機の固定子コイル
エンド構造。9. The stator coil end structure for a rotating electric machine according to claim 8, wherein the third semiconductive layer has two or more stages.
イルエンド側端部に設けられた、上記半導電層の端部よ
り大きい曲率半径を有する半導電性部材からなることを
特徴とする請求項１に記載の回転電機の固定子コイルエ
ンド構造。10. The semiconductor device according to claim 1, wherein the discharge prevention member is a semiconductive member provided at an end of the semiconductive layer on the coil end side and having a larger radius of curvature than an end of the semiconductive layer. Item 2. A stator coil end structure for a rotating electric machine according to item 1.
コイルエンド側端部に沿って延び、端部を裏表から挟む
ように覆う半導電性キャップからなることを特徴とする
請求項１０に記載の回転電機の固定子コイルエンド構
造。11. The semi-conductive member according to claim 10, wherein the semi-conductive member comprises a semi-conductive cap extending along an end of the semi-conductive layer on the coil end side and covering the end from the front and back. 3. A stator coil end structure for a rotary electric machine according to item 1.
コイルエンド側端部の縁に沿って延びる半導電性チュー
ブからなることを特徴とする請求項１０に記載の回転電
機の固定子コイルエンド構造。12. The stator according to claim 10, wherein the semiconductive member comprises a semiconductive tube extending along an edge of a coil end side end of the semiconductive layer. Coil end structure.
である分圧比が５０％以下であることを特徴とする請求
項１ないし１２のいずれかに記載の回転電機の固定子コ
イルエンド構造。13. The stator coil end structure for a rotating electric machine according to claim 1, wherein a voltage division ratio, which is a ratio between the main insulating layer and the shield insulating layer, is 50% or less. .
１０7Ωの範囲にあることを特徴とする請求項１ないし
１３のいずれかに記載の回転電機の固定子コイルエンド
構造。14. The semiconductive layer has a surface resistivity of 10 2 to 10 2 .
The stator coil end structure for a rotating electric machine according to any one of claims 1 to 13, wherein the stator coil end structure is in a range of 10 7 Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03309198A JP3615926B2 (en) | 1998-02-16 | 1998-02-16 | Stator coil end structure of rotating electrical machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03309198A JP3615926B2 (en) | 1998-02-16 | 1998-02-16 | Stator coil end structure of rotating electrical machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11234937A true JPH11234937A (en) | 1999-08-27 |
| JP3615926B2 JP3615926B2 (en) | 2005-02-02 |
Family
ID=12377012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03309198A Expired - Lifetime JP3615926B2 (en) | 1998-02-16 | 1998-02-16 | Stator coil end structure of rotating electrical machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3615926B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649734A (en) * | 2018-06-27 | 2020-01-03 | 东元电机股份有限公司 | Motor winding structure |
| CN112287546A (en) * | 2020-10-28 | 2021-01-29 | 西安交通大学 | Optimization method for anti-corona structure of high voltage motor based on multi-node RC network model |
| CN112699578A (en) * | 2020-09-30 | 2021-04-23 | 哈尔滨理工大学 | Rapid inspection method for electric field and temperature on surface of motor bar |
-
1998
- 1998-02-16 JP JP03309198A patent/JP3615926B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649734A (en) * | 2018-06-27 | 2020-01-03 | 东元电机股份有限公司 | Motor winding structure |
| CN112699578A (en) * | 2020-09-30 | 2021-04-23 | 哈尔滨理工大学 | Rapid inspection method for electric field and temperature on surface of motor bar |
| CN112287546A (en) * | 2020-10-28 | 2021-01-29 | 西安交通大学 | Optimization method for anti-corona structure of high voltage motor based on multi-node RC network model |
| CN112287546B (en) * | 2020-10-28 | 2023-09-05 | 西安交通大学 | Optimization method for anti-corona structure of high-voltage motor based on multi-node resistance-capacitance network model |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3615926B2 (en) | 2005-02-02 |
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