JPH11243135A - Vacuum suction cup - Google Patents
Vacuum suction cupInfo
- Publication number
- JPH11243135A JPH11243135A JP4523498A JP4523498A JPH11243135A JP H11243135 A JPH11243135 A JP H11243135A JP 4523498 A JP4523498 A JP 4523498A JP 4523498 A JP4523498 A JP 4523498A JP H11243135 A JPH11243135 A JP H11243135A
- Authority
- JP
- Japan
- Prior art keywords
- suction
- resin layer
- chucking
- vacuum
- porous resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、研磨、切削、切断
等の加工を施す被加工物を精度良く保持することができ
るとともに、吸着面上の吸引孔に目詰まりがない真空吸
着盤に関するものであり、特に、半導体製造用として好
適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum suction disk which can accurately hold a workpiece to be polished, cut or cut, and has no clogging of a suction hole on a suction surface. Which is particularly suitable for semiconductor production.
【0002】[0002]
【従来技術】近年、超LSIの高密度化、高集積化に伴
い配線の多層化が進んでいる。例えば、D−RAMは6
4M−bit以上が主流になり、これに伴い半導体ウエ
ハ上には成膜−エッチング−露光といった処理を繰り返
しながら導体膜と絶縁膜とを順次成膜し、3層以上の積
層膜を形成するようになっている。2. Description of the Related Art In recent years, multi-layered wiring has been developed in accordance with high density and high integration of VLSI. For example, D-RAM is 6
4M-bit or more becomes mainstream, and accordingly, a conductor film and an insulating film are sequentially formed on a semiconductor wafer while repeating processes such as film formation, etching, and exposure to form a laminated film of three or more layers. It has become.
【0003】ところで、半導体ウエハに3層以上の積層
膜を形成しようとすると、膜表面が凹凸面となり露光焦
点が合わなくなることから積層工程中において研磨加工
を施すことにより膜表面を平坦化する必要があり、この
研磨加工時に半導体ウエハを精度良く保持するために真
空吸着盤が使用されている。When a laminated film of three or more layers is to be formed on a semiconductor wafer, the film surface becomes uneven and the focus of exposure becomes out of focus. Therefore, it is necessary to flatten the film surface by polishing during the laminating process. A vacuum suction disk is used to hold a semiconductor wafer with high precision during the polishing process.
【0004】このような真空吸着盤には大きくわけて2
種類のものがあり、一方は吸着面が多数の貫通微小孔か
らなる吸引孔を備えた緻密質体からなるもの、他方は吸
着面が連続した微小空孔からなる吸引孔を備えた多孔質
体からなるものがあった。そして、いずれの真空吸着盤
も吸引孔を介して真空吸引することにより半導体ウエハ
のような被加工物を吸着面上に吸着保持するようになっ
ていた。[0004] Such a vacuum suction disk is roughly divided into two.
There are various types, one of which has a suction surface made of a dense body having suction holes made up of a large number of penetrating micropores, and the other has a suction surface made of a suction hole made of continuous micropores. There was something consisting of In addition, all the vacuum suction disks suck a workpiece such as a semiconductor wafer on a suction surface by vacuum suction through a suction hole.
【0005】また、これら真空吸着盤の吸着面は、被加
工物を精度良く保持するために高硬度を有するとともに
高精度に平坦化でき、しかも研磨液に対して優れた耐薬
品性を有していることが必要であることから、吸着面を
構成する緻密質体や多孔質体をアルミナや炭化珪素など
のセラミックスにより形成したものがあった(特開平4
−35827号公報参照)。In addition, the suction surface of these vacuum suction disks has a high hardness in order to hold a workpiece with high precision, can be flattened with high precision, and has excellent chemical resistance to a polishing liquid. In some cases, a dense body or a porous body forming the adsorption surface is formed of ceramics such as alumina or silicon carbide (Japanese Patent Laid-Open No.
-35827).
【0006】[0006]
【発明が解決しようとする課題】ところが、これらの真
空吸着盤により被加工物を保持した状態で研磨、切削、
切断等の加工を施すと、吸着面に存在する吸引孔(貫通
微小孔や微小空孔)が次第に目詰まりを起こし、所定の
吸着力が得られなくなるために被加工物を精度良く保持
できなくなるといった課題があった。However, while the workpiece is held by these vacuum suction disks, polishing, cutting,
When processing such as cutting is performed, suction holes (micro through holes or micro holes) existing in the suction surface gradually become clogged, and a predetermined suction force cannot be obtained, so that the workpiece cannot be accurately held. There was such a problem.
【0007】例えば、被加工物の研磨加工では、真空吸
着盤の吸着面に被加工物を強固に吸着保持させたとして
も被加工物と吸着面との間には微小な隙間が存在するた
めに、この微小な隙間から砥粒や研磨片、あるいはゴミ
を含んだ研磨液が吸着面上の吸引孔(貫通微小孔や微小
空孔)に入り込んで堆積する結果、目詰まりを発生させ
ていた。For example, in the polishing of a workpiece, a minute gap exists between the workpiece and the suction surface even if the workpiece is firmly suction-held on the suction surface of the vacuum suction disk. In the meantime, the polishing liquid containing abrasive grains, polishing pieces, or dust enters the suction holes (through-holes or minute holes) on the suction surface and accumulates from the minute gaps, resulting in clogging. .
【0008】また、吸着面の吸引孔(貫通微小孔や微小
空孔)に入り込んだ砥粒、研磨片、ゴミ等は洗浄処理を
施しても完全に除去することが難しかった。特に吸着面
が多孔質セラミックスからなる真空吸着盤では、吸引孔
(微小空孔)が三次元的に入り組んだ構造をしているこ
とから殆ど除去できず、初期の状態に戻すことは困難で
あった。Further, it has been difficult to completely remove abrasive grains, polished pieces, dust and the like that have entered suction holes (through-holes or micro-holes) on the suction surface, even after washing. In particular, in a vacuum suction disk in which the suction surface is made of porous ceramics, the suction holes (micro holes) have a three-dimensionally complicated structure, and can hardly be removed, and it is difficult to return to the initial state. Was.
【0009】しかも、洗浄処理を施しても数日から10
日程度で目詰まりを起こすことからその度に装置を停止
させなければならず、作業効率が悪かった。[0009] In addition, even if the cleaning treatment is performed, several days to 10
Since the clogging occurs in about a day, the device must be stopped each time, and the work efficiency is poor.
【0010】さらに、真空吸着盤の吸着面は硬質のセラ
ミックスからなるため、被加工物が半導体ウエハのよう
に比較的硬度の小さい材料である場合、脱着時に被加工
物を引っ掻いて傷付ける恐れもあった。Further, since the suction surface of the vacuum suction disk is made of hard ceramics, when the work is made of a material having a relatively low hardness such as a semiconductor wafer, the work may be scratched and damaged during detachment. Was.
【0011】[0011]
【発明が解決しようとする手段】そこで、本発明は上記
課題に鑑み、被加工物を真空吸引するための吸引孔を備
えた吸着面がセラミックスからなり、上記吸着面に通気
性を有するものの液体を通し難い平均細孔径が2.5〜
15μm、厚み幅が0.1〜1.0mmである多孔質樹
脂層を被着して真空吸着盤を構成したものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention has a suction surface provided with a suction hole for vacuum suctioning a workpiece made of ceramics, and the suction surface has a gas permeable property. Average pore size of 2.5-
A vacuum suction disk is formed by applying a porous resin layer having a thickness of 15 μm and a thickness of 0.1 to 1.0 mm.
【0012】本発明において、吸引孔を備えた吸着面が
セラミックスからなるとは、吸着面が多孔質セラミック
スからなり、三次元編目構造的に連続した微小空孔を吸
引孔としたものや、吸着面が緻密質セラミックスからな
り、該緻密質セラミックスに空けた多数の貫通微小孔を
吸引孔としたもののことである。In the present invention, the expression that the suction surface provided with the suction hole is made of ceramics means that the suction surface is made of porous ceramics and the suction hole is formed of micropores continuous in a three-dimensional stitch structure, Is made of dense ceramics, and a large number of through-holes formed in the dense ceramics are suction holes.
【0013】[0013]
【発明の実施の形態】以下、本発明の実施形態について
説明する。図1(a)は本発明の真空吸着盤1の一例を
示す分解斜視図であり、(b)は真空吸着盤1の縦断面
図である。Embodiments of the present invention will be described below. FIG. 1A is an exploded perspective view showing an example of the vacuum suction disk 1 of the present invention, and FIG. 1B is a longitudinal sectional view of the vacuum suction disk 1.
【0014】この真空吸着盤1は、周縁に段差部2bを
有する円盤状体2をしたもので、該円盤状体2は微小空
孔が連続した三次元編目構造を有する多孔質セラミック
スにからなり、上記微小空孔を吸引孔3としてある。ま
た、上記円盤状体2の外周面及び下面の周縁には微小空
孔を閉じるために樹脂やガラスなどからなるシール層5
を設けてあり、該シール層5により周縁を囲まれた円盤
状体2の上面を吸着面4としてある。そして、この吸着
面4の全面には、平均細孔径が2.5〜15μmでかつ
厚み幅が0.1〜1.0mmの通気性を備えた多孔質樹
脂層6が被着してある。なお、多孔質樹脂層6を吸着面
4に被着する方法としては、多孔質樹脂層6の周縁部に
貼り付けた両面テープ等の粘着剤で固定したり、多孔質
樹脂層6の周縁部に塗布した接着剤で固定しても良く、
さらには吸着面4上に樹脂ペーストを塗布したあと硬化
させて多孔質樹脂層6を直接吸着面4上に被着させても
良い。The vacuum suction disk 1 has a disk-shaped body 2 having a stepped portion 2b at the periphery thereof. The disk-shaped body 2 is made of porous ceramics having a three-dimensional stitch structure in which minute holes are continuous. The minute holes are suction holes 3. In addition, a sealing layer 5 made of resin, glass, or the like is provided on the outer peripheral surface and the lower peripheral edge of the disc-shaped body 2 in order to close minute holes.
The upper surface of the disc-shaped body 2 whose periphery is surrounded by the seal layer 5 is used as the suction surface 4. A porous resin layer 6 having an average pore diameter of 2.5 to 15 μm and a thickness of 0.1 to 1.0 mm and having air permeability is applied to the entire surface of the adsorption surface 4. The method of attaching the porous resin layer 6 to the adsorption surface 4 includes fixing the porous resin layer 6 with an adhesive such as a double-sided tape attached to the peripheral edge of the porous resin layer 6, May be fixed with an adhesive applied to the
Further, the porous resin layer 6 may be applied directly onto the adsorption surface 4 by applying a resin paste on the adsorption surface 4 and then curing the resin paste.
【0015】この真空吸着盤1により例えば半導体ウエ
ハのような被加工物Wを保持するには、多孔質樹脂層6
上に被加工物Wを載置し、真空吸着盤1の下面より不図
示の真空ポンプによって真空吸引すれば、吸引孔3内及
び多孔質樹脂層6内が負圧となり、被加工物Wが多孔質
樹脂層6上に吸い付けられて保持されるようになってい
る。In order to hold a workpiece W such as a semiconductor wafer by the vacuum suction disk 1, a porous resin layer 6
When the workpiece W is placed on the upper side and vacuum suction is performed from the lower surface of the vacuum suction disk 1 by a vacuum pump (not shown), the inside of the suction hole 3 and the inside of the porous resin layer 6 become negative pressure, and the workpiece W It is configured to be sucked and held on the porous resin layer 6.
【0016】このような円盤状体2を構成する多孔質セ
ラミックスとしては、平均空孔径が10〜50μmでか
つ空孔率が30〜50%の範囲にあるものが良い。これ
は、平均空孔径が10μm未満であったり、空孔率が3
0%未満であると、多孔質セラミックス内を流れる空気
抵抗が大きくなり過ぎるために、吸引力を大きくしても
十分な吸着力が得られないからであり、平均空孔径が5
0μmより大きかったり、空孔率が50%より大きくな
ると、吸着面4が凹凸面となるために被加工物Wを精度
良く保持できなくなるからである。しかも、吸着面4の
平均空孔径や空孔率が大きくなり過ぎると、多孔質セラ
ミックスの強度が大幅に低下するために真空吸着盤1が
変形したり破損し易くなるといった問題もある。なお、
好ましくは平均空孔径が15〜25μmでかつ空孔率が
35〜45%の範囲にあるものが良い。As the porous ceramics constituting such a disk-shaped body 2, those having an average pore diameter of 10 to 50 μm and a porosity of 30 to 50% are preferable. This is because the average pore diameter is less than 10 μm or the porosity is 3
If it is less than 0%, the air resistance flowing through the porous ceramics becomes too large, so that even if the suction force is increased, a sufficient suction force cannot be obtained.
This is because if the porosity is larger than 0 μm or the porosity is larger than 50%, the workpiece W cannot be held with high accuracy because the suction surface 4 becomes an uneven surface. In addition, if the average pore diameter and the porosity of the suction surface 4 become too large, the strength of the porous ceramics is greatly reduced, so that there is a problem that the vacuum suction disk 1 is easily deformed or damaged. In addition,
Preferably, the average pore diameter is 15 to 25 μm and the porosity is in the range of 35 to 45%.
【0017】また、円盤状体2を構成するセラミックス
としては、アルミナセラミックス、炭化珪素質セラミッ
クス、Al2 O3 −TiC系セラミックス、Al2 O3
−ZrO2 系セラミックス等を用いることができる。こ
れらのセラミックスは多孔質体であるもののビッカース
硬度が900kg/mm2 以上、曲げ強度が15kg/
mm2 以上と十分な機械的特性を有するとともに、高精
度に加工することができ、さらには酸やアルカリ等の薬
品に対して優れた耐薬品性を有することから、真空吸着
盤1を構成する材質として好適に用いることができる。The ceramics constituting the disc-shaped body 2 include alumina ceramics, silicon carbide ceramics, Al 2 O 3 —TiC ceramics, and Al 2 O 3 ceramics.
It can be used -ZrO 2 based ceramics and the like. Although these ceramics are porous, they have a Vickers hardness of 900 kg / mm 2 or more and a bending strength of 15 kg / mm 2.
The vacuum suction disk 1 has sufficient mechanical properties of not less than 2 mm 2, can be processed with high precision, and has excellent chemical resistance to chemicals such as acids and alkalis. It can be suitably used as a material.
【0018】また、吸着面4はその面状態が被加工物W
の保持精度に影響を与えることから、できるだけ平坦化
する必要があり、少なくとも平坦度1μm以下とするこ
とが良い。なお、円盤状体2を構成するセラミックスと
しては前述した材料以外でもビッカース硬度900kg
/mm2 以上、曲げ強度15kg/mm2 以上を有する
セラミックスであれば構わない。The suction surface 4 has a surface state of the workpiece W.
It is necessary to make the surface as flat as possible because it affects the holding accuracy of the substrate. The ceramics constituting the disc-shaped body 2 may be made of a material other than the above-mentioned materials, having a Vickers hardness of 900 kg.
/ Mm 2 or more and a ceramic having a bending strength of 15 kg / mm 2 or more.
【0019】さらに、本発明によれば、この吸着面4の
ほぼ全面に、平均細孔径が2.5〜15μmでかつ厚み
幅が0.1〜1.0mmの多孔質樹脂層6を被着したこ
とを特徴とする。Further, according to the present invention, a porous resin layer 6 having an average pore diameter of 2.5 to 15 μm and a thickness of 0.1 to 1.0 mm is applied to almost the entire surface of the adsorption surface 4. It is characterized by having done.
【0020】この多孔質樹脂層6は、図2に示すように
繊維状の樹脂同士が結合したもので、これら繊維状の樹
脂間には超微小な空孔を有するものである。このような
多孔質樹脂層6としては、例えば、ジャパンゴアテック
ス社のポリテトラフルオロエチレン樹脂からなる多孔質
樹脂層6(商品名:オレオベントフィルター)を用いる
ことができる。このジャパンゴアテックス社製の多孔質
樹脂層6は通気性を有するものの液体は通し難く、ま
た、耐薬品性や耐候性を兼ね備え、さらには適度な弾性
を有することから、本件発明者はこの特性に着目し、こ
の多孔質樹脂層6を真空吸着盤1の吸着面4に設けるこ
とで、被加工物Wの吸引力を低下させることなく、研磨
加工時における、砥粒、研磨片、ゴミ等を含む研磨液の
侵入を防ぎ、吸着面4上の吸引孔3が目詰まりすること
を防止できることを見出したものである。なお、本発明
の多孔質樹脂層6を構成する樹脂としてはポリテトラフ
ルオロエチレン樹脂以外にウレタン樹脂、エポキシ樹
脂、シリコーン樹脂からなる多孔質樹脂層6を用いるこ
とも可能である。As shown in FIG. 2, the porous resin layer 6 is formed by bonding fibrous resins to each other, and has ultrafine pores between the fibrous resins. As such a porous resin layer 6, for example, a porous resin layer 6 (trade name: Oleovent Filter) made of polytetrafluoroethylene resin manufactured by Japan Gore-Tex Corporation can be used. Since the porous resin layer 6 made by Japan Gore-Tex Co. has gas permeability, it is difficult for liquid to pass through, and has both chemical resistance and weather resistance, and furthermore, has moderate elasticity. By providing this porous resin layer 6 on the suction surface 4 of the vacuum suction disk 1, abrasive grains, polished pieces, dust, and the like during polishing are reduced without reducing the suction force of the workpiece W. It has been found that it is possible to prevent intrusion of the polishing liquid containing, and to prevent the suction holes 3 on the suction surface 4 from being clogged. In addition, as a resin constituting the porous resin layer 6 of the present invention, a porous resin layer 6 made of a urethane resin, an epoxy resin, or a silicone resin can be used in addition to the polytetrafluoroethylene resin.
【0021】ただし、この多孔質樹脂層6を真空吸着盤
1に用いるには平均細孔径が2.5〜15μmの範囲に
あるとともに、その厚み幅tが0.1mm以上であるも
のを用いることが重要である。However, in order to use this porous resin layer 6 for the vacuum suction disk 1, it is necessary to use a material having an average pore diameter in the range of 2.5 to 15 μm and a thickness t of 0.1 mm or more. is important.
【0022】即ち、平均細孔径が2.5μm以下である
と、多孔質樹脂層6内を流れる空気抵抗が大きくなり過
ぎ、吸引力を大きくしても十分な吸着力が得られないか
らであり、平均細孔径が15μmより大きくなると砥
粒、研磨片、ゴミ等を含んだ研磨液がしみ込み易くなる
からである。なお、多孔質樹脂層6の平均細孔径は水銀
圧入法を用いて測定すれば良い。That is, if the average pore diameter is 2.5 μm or less, the air resistance flowing through the porous resin layer 6 becomes too large, and a sufficient suction force cannot be obtained even if the suction force is increased. If the average pore diameter is larger than 15 μm, the polishing liquid containing abrasive grains, polishing pieces, dust and the like is likely to permeate. The average pore diameter of the porous resin layer 6 may be measured using a mercury intrusion method.
【0023】また、多孔質樹脂層6の厚み幅tが0.1
mm未満では、厚みが薄すぎるために平均細孔径が5〜
15μmの範囲にあっても耐水性が低下し、研磨液が吸
着面4までしみ込み易くなるからである。ただし、多孔
質樹脂層6の厚み幅tが1mmより厚くなると、多孔質
樹脂層6の弾性が働きすぎるために被加工物Wを精度良
く保持することが難しくなる。特に、被加工物Wが半導
体ウエハである場合、多孔質樹脂層6の厚み幅tが1m
mより厚くなると、被加工物Wの加工精度が大きく低下
して寸法不良となるからである。The thickness t of the porous resin layer 6 is 0.1
If it is less than mm, the average pore diameter is 5 to 5
This is because the water resistance is reduced even in the range of 15 μm, and the polishing liquid easily permeates to the adsorption surface 4. However, if the thickness t of the porous resin layer 6 is greater than 1 mm, the elasticity of the porous resin layer 6 becomes too large, so that it is difficult to hold the workpiece W with high accuracy. In particular, when the workpiece W is a semiconductor wafer, the thickness t of the porous resin layer 6 is 1 m.
When the thickness is larger than m, the processing accuracy of the workpiece W is greatly reduced, resulting in dimensional defects.
【0024】その為、多孔質樹脂層6の厚み幅tの上限
は1mmまでが良く、望ましくは0.2〜0.5mmの
範囲が良い。なお、多孔質樹脂層6の空孔率が10%未
満であると、通気性を得ることが難しく、空孔率が50
%より大きくなると樹脂が剥がれたり破れたりし易くな
るため、空孔率は10〜50%のものが良く、この空孔
率はアルキメデス法を用いて測定すれば良い。For this reason, the upper limit of the thickness t of the porous resin layer 6 is preferably up to 1 mm, and more preferably in the range of 0.2 to 0.5 mm. If the porosity of the porous resin layer 6 is less than 10%, it is difficult to obtain air permeability, and the porosity is 50%.
%, The resin is liable to be peeled or torn, so that the porosity is preferably 10 to 50%, and the porosity may be measured using the Archimedes method.
【0025】かくして本発明の真空吸着盤1を用いて半
導体ウエハなどの被加工物Wを吸着保持し、例えば研磨
加工を施せば、被加工物Wの位置ずれを生じることがな
いため、0.1μmオーダーの精密研磨を施すことがで
きるとともに、被加工物Wと多孔質樹脂層6との隙間に
砥粒、研磨片、ゴミ等を含む研磨液が侵入したとしても
多孔質樹脂層6が吸着面4にまで浸透することを極力抑
えることができるため、吸着面4における吸引孔3の目
詰まりを防ぐことができ、他に切削や切断加工において
も同様の効果を得ることができる。しかも、洗浄作業が
殆ど不要であることから長期使用においても吸着特性の
低下がない。Thus, if the workpiece W such as a semiconductor wafer is sucked and held by using the vacuum suction disk 1 of the present invention and subjected to, for example, a polishing process, the workpiece W will not be displaced. It is possible to perform precision polishing on the order of 1 μm, and the porous resin layer 6 is adsorbed even when a polishing liquid containing abrasive grains, polishing pieces, dust and the like enters the gap between the workpiece W and the porous resin layer 6. Since the permeation to the surface 4 can be suppressed as much as possible, clogging of the suction holes 3 in the suction surface 4 can be prevented, and the same effect can be obtained in cutting and cutting. In addition, since almost no cleaning work is required, there is no decrease in adsorption characteristics even in long-term use.
【0026】その上、被加工物Wとの接触面が樹脂から
なるため、半導体ウエハのように比較的硬度の低い材質
でも脱着時における摺動によって半導体ウエハを傷付け
ることがない。In addition, since the surface in contact with the workpiece W is made of resin, even a material having a relatively low hardness such as a semiconductor wafer does not damage the semiconductor wafer due to sliding during detachment.
【0027】このように、図1では真空吸着盤1を構成
する円盤状体2を多孔質セラミックスにより形成した例
を示したが、図3(a)(b)に示す真空吸着盤11に
も適用することができる。As described above, FIG. 1 shows an example in which the disk-shaped body 2 constituting the vacuum suction disk 1 is formed of porous ceramics. However, the vacuum suction disk 11 shown in FIGS. Can be applied.
【0028】この真空吸着装置11は、緻密質セラミッ
クスからなる円盤状体12で、該円盤状体12には上下
面を貫通する多数の貫通微小孔を有し、該貫通微小孔を
吸引孔13とするとともに、円盤状体12の上面を吸着
面14としたもので、上記吸着面14のほぼ全面には図
1の真空吸着装置1と同様に平均細孔径が2.5〜15
μmでかつ厚み幅が0.1〜1.0mmの通気性を有す
る多孔質樹脂層16を被着してある。This vacuum suction device 11 is a disk-shaped body 12 made of dense ceramics. The disk-shaped body 12 has a large number of through-holes penetrating the upper and lower surfaces. In addition, the upper surface of the disc-shaped body 12 is used as the suction surface 14, and almost the entire surface of the suction surface 14 has an average pore diameter of 2.5 to 15 like the vacuum suction device 1 of FIG.
A porous resin layer 16 having a thickness of 0.1 μm and a thickness of 0.1 to 1.0 mm and having air permeability is applied.
【0029】このような円盤状体12に穿設する吸引孔
13の穴径としては、0.05〜0.3mmが良い。こ
れは、吸引孔13の穴径が0.05mm未満となると空
気抵抗が大きくなり過ぎ、吸引力を大きくしても十分な
吸着力が得られず、またこれ以上小さな微小孔を硬質の
セラミックスに穿設することが難しいからであり、吸引
孔13の穴径が0.3mmより大きくなると、多孔質樹
脂層16の被加工物Wとの接触面が窪んで平坦度が低下
し、被加工物Wの加工精度に悪影響を与えるからであ
る。The diameter of the suction hole 13 formed in the disk-shaped body 12 is preferably 0.05 to 0.3 mm. This is because when the hole diameter of the suction hole 13 is less than 0.05 mm, the air resistance becomes too large, and even if the suction force is increased, a sufficient suction force cannot be obtained. If the hole diameter of the suction hole 13 is larger than 0.3 mm, the contact surface of the porous resin layer 16 with the workpiece W is depressed, and the flatness is reduced. This is because the processing accuracy of W is adversely affected.
【0030】以上、本発明の実施形態として2種類の真
空吸着盤1,11について示したが、本発明はこれらの
構造だけに限定されるものではなく、少なくとも吸着面
がセラミックスからなり、その吸着面上に平均細孔径が
2.5〜15μm、厚み幅が0.1〜1.0mmの多孔
質樹脂層を備えたものであればどの様な構造をしたもの
であっても構わない。As described above, two types of vacuum suction disks 1 and 11 have been described as embodiments of the present invention. However, the present invention is not limited to only these structures, and at least the suction surface is made of ceramics. Any structure may be used as long as the surface is provided with a porous resin layer having an average pore diameter of 2.5 to 15 μm and a thickness of 0.1 to 1.0 mm.
【0031】(実施例1)図1のように吸着面が多孔質
セラミックスからなる本発明の真空吸着盤と従来の真空
吸着盤とを用意し、シリコンウエハにポリッシング加工
を施す作業を繰り返した時の耐久性について調べる実験
を行った。Example 1 As shown in FIG. 1, when a vacuum suction disk of the present invention and a conventional vacuum suction disk whose suction surfaces are made of porous ceramics were prepared, and the operation of polishing a silicon wafer was repeated. An experiment was conducted to examine the durability of the steel.
【0032】本実験では吸着面の外径が約150mm、
厚みが30mmの円盤状体を純度99.5%、平均空孔
径が4μm、空孔率が35%の多孔質セラミックスによ
り形成し、上記円盤状体の外周面と下面の周縁にのみ溶
融ガラスを塗布して硬化させることによりシール層を設
け、さらに吸着面を0.5μmの平坦度に研磨加工した
真空吸着盤を使用した。In this experiment, the outer diameter of the adsorption surface was about 150 mm,
A disc having a thickness of 30 mm is formed of porous ceramics having a purity of 99.5%, an average pore diameter of 4 μm, and a porosity of 35%, and molten glass is applied only to the outer peripheral surface and the lower peripheral edge of the disc. A vacuum suction disk was used in which a seal layer was provided by coating and curing, and the suction surface was polished to a flatness of 0.5 μm.
【0033】また、本発明品は、吸着面に平均細孔径が
5μm、厚み幅が0.2mmのポリテトラフルオロエチ
レン樹脂からなる多孔質樹脂層6(ジャパンゴアテック
ス社のオレオベントフィルター)を両面テープで貼り付
けたものを使用した。The product of the present invention has a porous resin layer 6 made of polytetrafluoroethylene resin having an average pore diameter of 5 μm and a thickness of 0.2 mm (oleo vent filter manufactured by Japan Gore-Tex Co.) on both sides of the adsorption surface. The one attached with tape was used.
【0034】そして、本発明品と従来品の真空吸着盤に
より6インチサイズのシリコンウエハを吸着保持し、粒
径が0.5μm程度のSiO2 砥粒を含む研磨液を供給
しながらポリッシング加工を1日200枚について処理
する作業を繰り返した時に加工後のシリコンウエハの平
坦度が0.1μm以上となるまでの稼働日数を比較した
ところ、従来品は10日間程度で吸着力の低下による平
坦度の低下が見られた。そこで、吸着面を電子顕微鏡で
観察したところ、吸引孔が完全に目詰まりを起こしてい
た。Then, a 6 inch silicon wafer is sucked and held by the vacuum suction disks of the present invention and the conventional product, and polishing is performed while supplying a polishing liquid containing SiO 2 abrasive particles having a particle size of about 0.5 μm. When the operation of processing 200 wafers per day was repeated, the number of operating days until the flatness of the processed silicon wafer became 0.1 μm or more was compared. Decreased. Then, when the adsorption surface was observed with an electron microscope, the suction holes were completely clogged.
【0035】これに対し、本発明品は3か月後でも吸着
力の低下は見られず、さらに作業を続けることが可能で
あった。On the other hand, the product of the present invention did not show a decrease in the adsorbing power even after three months, and it was possible to continue the work.
【0036】(実施例2)次に、実施例1で使用した本
発明の真空吸着盤を用い、多孔質樹脂層6の平均細孔径
を変化させた時の研磨液の浸透量と差圧を調べる実験を
行った。なお、差圧とは多孔質樹脂層6上に被加工物W
を吸着させた時の真空度と吸着させていない時の真空度
との差のことであり、本実験では6インチサイズのシリ
コンウエハを精度良く保持させるのに必要とされる35
0mmHg以上のものを良好として判断した。(Example 2) Next, using the vacuum suction disk of the present invention used in Example 1, the permeation amount and the differential pressure of the polishing liquid when the average pore diameter of the porous resin layer 6 was changed were determined. An experiment was conducted to investigate. Note that the differential pressure means that the workpiece W is placed on the porous resin layer 6.
Is the difference between the degree of vacuum when suction is performed and the degree of vacuum when suction is not performed. In this experiment, it is necessary to accurately hold a 6-inch silicon wafer.
Those having 0 mmHg or more were judged as good.
【0037】それぞれの結果は図4及び図5に示す通り
である。The respective results are as shown in FIGS.
【0038】この結果、図4より判るように、多孔質樹
脂層6の平均細孔径が2.5μm以上となると差圧が急
激に高くなり、350mmHg以上とできることが判
る。ただし、図5に見られるように、平均細孔径が15
μmより大きくなると研磨液の浸透量が急激に増加する
ことが判る。As a result, as can be seen from FIG. 4, when the average pore diameter of the porous resin layer 6 becomes 2.5 μm or more, the pressure difference increases sharply, and it can be seen that the pressure difference can be 350 mmHg or more. However, as seen in FIG.
It can be seen that when it is larger than μm, the penetration amount of the polishing liquid sharply increases.
【0039】このことから、多孔質樹脂層6の平均細孔
径は2.5〜15μmの範囲が良いことが判る。This indicates that the average pore diameter of the porous resin layer 6 is preferably in the range of 2.5 to 15 μm.
【0040】なお、本実施例では吸着面が多孔質セラミ
ックスからなる真空吸着盤について示したが、吸着面が
緻密質セラミックスからなり、その吸着面に貫通微小孔
からなる吸引孔を備えた真空吸着盤においても同様の傾
向が見られた。In this embodiment, a vacuum suction disk having a suction surface made of porous ceramics has been described. However, a vacuum suction device having a suction surface made of dense ceramics and having a suction hole made up of a fine through hole on the suction surface. A similar tendency was observed on the board.
【0041】[0041]
【発明の効果】以上のように、本発明の真空吸着盤によ
れば、被加工物を真空吸引するための吸引孔を備えた吸
着面がセラミックスからなり、上記吸着面に平均細孔径
が2.5〜15μm、厚み幅が0.1〜1.0mmの通
気性を備えた多孔質樹脂層を被着したことから、吸着特
性を低下させることなく、被加工物を強固に吸着保持す
ることができるとともに、液体が吸着面にまで浸透する
ことが殆どない。その為、本発明の真空吸着盤を研磨、
切削、切断等の加工に用いれば、これらの作業を繰り返
したとしても吸着面上の吸引孔に砥粒や加工片やゴミ等
が堆積することがないため吸引孔の目詰まりを防ぐこと
ができる。As described above, according to the vacuum suction disk of the present invention, the suction surface provided with the suction hole for vacuum suctioning the workpiece is made of ceramics, and the suction surface has an average pore diameter of 2 mm. Since a porous resin layer having air permeability of 0.5 to 15 μm and a thickness of 0.1 to 1.0 mm is applied, the workpiece is firmly adsorbed and held without deteriorating the adsorption characteristics. And the liquid hardly penetrates to the adsorption surface. Therefore, the vacuum suction disk of the present invention is polished,
If used for machining such as cutting and cutting, even if these operations are repeated, clogging of the suction holes can be prevented because no abrasive grains, work pieces or dust are deposited on the suction holes on the suction surface. .
【0042】その結果、メンテナンス回数を大幅に低減
でき、作業効率を大幅に向上させることができるととも
に、長期間にわたって被加工物を高精度に加工すること
ができる。As a result, the number of times of maintenance can be greatly reduced, work efficiency can be greatly improved, and a workpiece can be machined with high precision for a long period of time.
【0043】しかも、吸着特性が低下した時には多孔質
樹脂層6のみの交換で済み、真空吸着盤自体を交換する
必要がないため経済的である。In addition, when the adsorption characteristics are deteriorated, only the porous resin layer 6 needs to be replaced, and there is no need to replace the vacuum suction plate itself, which is economical.
【0044】その上、被加工物が半導体ウエハのように
比較的硬度の小さなものでも接触面が弾性を有する樹脂
からなるため、被加工物を傷付けるようなこともない。In addition, even if the workpiece is relatively hard, such as a semiconductor wafer, the contact surface is made of an elastic resin, so that the workpiece is not damaged.
【図1】(a)は本発明の真空吸着盤の一例を示す分解
斜視図であり、(b)は縦断面図である。FIG. 1A is an exploded perspective view showing an example of the vacuum suction disk of the present invention, and FIG. 1B is a longitudinal sectional view.
【図2】図1の真空吸着盤に被着した多孔質樹脂層の構
造を示す拡大写真である。FIG. 2 is an enlarged photograph showing a structure of a porous resin layer adhered to the vacuum suction plate of FIG.
【図3】(a)は本発明の真空吸着盤の他の例を示す分
解斜視図であり、(b)は縦断面図である。FIG. 3A is an exploded perspective view showing another example of the vacuum suction disk of the present invention, and FIG. 3B is a longitudinal sectional view.
【図4】多孔質樹脂層の平均細孔径と差圧との関係を示
すグラフである。FIG. 4 is a graph showing a relationship between an average pore diameter of a porous resin layer and a differential pressure.
【図5】多孔質樹脂層の平均細孔径と研磨液の浸透量と
の関係を示すグラフである。FIG. 5 is a graph showing a relationship between an average pore diameter of a porous resin layer and a penetration amount of a polishing liquid.
1,11・・・真空吸着盤 2,12・・・円盤状体 3,13・・・吸引孔 4,14・・・吸着面 5・・・シール層 6,16・・・多孔質樹脂層 W・・・被加工物 1, 11: vacuum suction disk 2, 12: disk-shaped body 3, 13: suction hole 4, 14: suction surface 5: seal layer 6, 16: porous resin layer W: Workpiece
Claims (1)
えた吸着面がセラミックスからなり、上記吸着面に平均
細孔径が2.5〜15μm、厚み幅が0.1〜1.0m
mである多孔質樹脂層を被着してなる真空吸着盤。1. A suction surface provided with a suction hole for vacuum suctioning a workpiece is made of ceramics, and the suction surface has an average pore diameter of 2.5 to 15 μm and a thickness of 0.1 to 1.0 m.
A vacuum suction plate having a porous resin layer of m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4523498A JPH11243135A (en) | 1998-02-26 | 1998-02-26 | Vacuum suction cup |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4523498A JPH11243135A (en) | 1998-02-26 | 1998-02-26 | Vacuum suction cup |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11243135A true JPH11243135A (en) | 1999-09-07 |
Family
ID=12713578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4523498A Pending JPH11243135A (en) | 1998-02-26 | 1998-02-26 | Vacuum suction cup |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11243135A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000025981A1 (en) * | 1998-10-30 | 2000-05-11 | Shin-Etsu Handotai Co., Ltd. | Unpolished work holding board and production method thereof and work polishing method and device |
| EP1080841A3 (en) * | 1999-09-02 | 2001-07-11 | Mitsubishi Materials Corporation | Carrier head, polishing apparatus using the carrier head, and method for sensing polished surface state |
| KR20020028455A (en) * | 2000-10-10 | 2002-04-17 | 마이클 디. 오브라이언 | Pickup tool of a semiconductor manufacturing equipment |
| JP2006027795A (en) * | 2004-07-14 | 2006-02-02 | Toshiba Corp | Adsorption device, plate-shaped member conveying method, and liquid crystal display manufacturing method |
| JP2006517351A (en) * | 2003-02-07 | 2006-07-20 | 東京エレクトロン株式会社 | Method and apparatus using a coating to firmly hold a semiconductor substrate during high pressure processing |
| JP2007242787A (en) * | 2006-03-07 | 2007-09-20 | Disco Abrasive Syst Ltd | Wafer division method |
| JP2008030175A (en) * | 2006-07-31 | 2008-02-14 | Setsuko Kondo | Lower chuck pad |
| JP2009147078A (en) * | 2007-12-13 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device, and manufacturing method thereof |
| JP2009239194A (en) * | 2008-03-28 | 2009-10-15 | Sanyo Electric Co Ltd | Method of processing semiconductor wafer |
| JP2014135310A (en) * | 2013-01-08 | 2014-07-24 | Lasertec Corp | Chuck device and chuck method |
| JP2015017008A (en) * | 2013-07-10 | 2015-01-29 | 旭化成ケミカルズ株式会社 | Porous laminate, adsorption buffer material, and adsorption method |
| JP2017019055A (en) * | 2015-07-13 | 2017-01-26 | 株式会社ディスコ | Chuck table and processing device equipped with chuck table |
| US10600668B2 (en) | 2017-03-30 | 2020-03-24 | Sharp Kabushiki Kaisha | Adsorption device, conveyance device, and EL device manufacturing device |
| CN111819033A (en) * | 2018-05-08 | 2020-10-23 | 丸石产业株式会社 | Polishing pad and polishing method using the same |
-
1998
- 1998-02-26 JP JP4523498A patent/JPH11243135A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000025981A1 (en) * | 1998-10-30 | 2000-05-11 | Shin-Etsu Handotai Co., Ltd. | Unpolished work holding board and production method thereof and work polishing method and device |
| US6386957B1 (en) | 1998-10-30 | 2002-05-14 | Shin-Etsu Handotai Co., Ltd. | Workpiece holder for polishing, method for producing the same, method for polishing workpiece, and polishing apparatus |
| EP1080841A3 (en) * | 1999-09-02 | 2001-07-11 | Mitsubishi Materials Corporation | Carrier head, polishing apparatus using the carrier head, and method for sensing polished surface state |
| KR20020028455A (en) * | 2000-10-10 | 2002-04-17 | 마이클 디. 오브라이언 | Pickup tool of a semiconductor manufacturing equipment |
| JP2006517351A (en) * | 2003-02-07 | 2006-07-20 | 東京エレクトロン株式会社 | Method and apparatus using a coating to firmly hold a semiconductor substrate during high pressure processing |
| JP2006027795A (en) * | 2004-07-14 | 2006-02-02 | Toshiba Corp | Adsorption device, plate-shaped member conveying method, and liquid crystal display manufacturing method |
| JP2007242787A (en) * | 2006-03-07 | 2007-09-20 | Disco Abrasive Syst Ltd | Wafer division method |
| JP2008030175A (en) * | 2006-07-31 | 2008-02-14 | Setsuko Kondo | Lower chuck pad |
| JP2009147078A (en) * | 2007-12-13 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device, and manufacturing method thereof |
| JP2009239194A (en) * | 2008-03-28 | 2009-10-15 | Sanyo Electric Co Ltd | Method of processing semiconductor wafer |
| JP2014135310A (en) * | 2013-01-08 | 2014-07-24 | Lasertec Corp | Chuck device and chuck method |
| US9117869B2 (en) | 2013-01-08 | 2015-08-25 | Lasertec Corporation | Chucking device and chucking method |
| JP2015017008A (en) * | 2013-07-10 | 2015-01-29 | 旭化成ケミカルズ株式会社 | Porous laminate, adsorption buffer material, and adsorption method |
| JP2017019055A (en) * | 2015-07-13 | 2017-01-26 | 株式会社ディスコ | Chuck table and processing device equipped with chuck table |
| US10600668B2 (en) | 2017-03-30 | 2020-03-24 | Sharp Kabushiki Kaisha | Adsorption device, conveyance device, and EL device manufacturing device |
| CN111819033A (en) * | 2018-05-08 | 2020-10-23 | 丸石产业株式会社 | Polishing pad and polishing method using the same |
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