JPH1126155A - Protection film for electroluminescent element - Google Patents
Protection film for electroluminescent elementInfo
- Publication number
- JPH1126155A JPH1126155A JP9173758A JP17375897A JPH1126155A JP H1126155 A JPH1126155 A JP H1126155A JP 9173758 A JP9173758 A JP 9173758A JP 17375897 A JP17375897 A JP 17375897A JP H1126155 A JPH1126155 A JP H1126155A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- diamond
- less
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 78
- 230000004888 barrier function Effects 0.000 abstract description 32
- -1 polyethylene terephthalate Polymers 0.000 abstract description 18
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 12
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 12
- 239000002994 raw material Substances 0.000 abstract description 8
- 230000009477 glass transition Effects 0.000 abstract description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 230000035699 permeability Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004831 Hot glue Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、エレクトロルミネ
ッセンスの保護に用いられる透明フィルムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent film used for protecting electroluminescence.
【0002】[0002]
【従来の技術】従来から、食品、薬品等の変質防止する
ため、これらをガスバリアフィルムにより包装すること
が行われている。また、エレクトロニクスの分野では、
エレクトロルミネッセンス素子をガスバリアフィルムで
保護し、その長寿命化を図っている。エレクトロルミネ
ッセンス素子をガスバリアーフィルムで被覆してなるエ
レクトロルミネッセンス発光装置の寿命は、ガスバリア
フィルムの酸素透過性や透湿性によって左右されること
が知られており、ガスバリア性を高めて酸素や水蒸気透
過量の低減をはかることは重要である。2. Description of the Related Art Heretofore, in order to prevent deterioration of foods, medicines and the like, they have been packaged with a gas barrier film. In the field of electronics,
The electroluminescent element is protected by a gas barrier film to extend its life. It is known that the life of an electroluminescent light emitting device in which an electroluminescent element is covered with a gas barrier film depends on the oxygen permeability and moisture permeability of the gas barrier film. It is important to reduce this.
【0003】ガスバリアフィルムとしてはポリエチレン
テレフタレートフィルム、ポリプロピレンフィルム、ポ
リアミドフィルムの上に無機化合物を設けたものが知ら
れている。その一例として、フィルム表面に酸化珪素や
酸化アルミニウムを蒸着したフィルム(特公昭53−1
2953号公報、特公昭62−49856号公報)を挙
げることができる。しかしながら、ガスバリアフィルム
により各種物品を包装、被覆する場合、通常、ヒートシ
ールが採用されるが、その際当然のことながらフィルム
には熱と応力が作用することになる。そして、これらの
ガスバリアフィルムを使用した場合、この熱と応力によ
りフィルムに伸び現象が生じ、この伸び現象に無機化合
物層が追随できず、微少なクラックが発生し、ガスバリ
ア性が低下してしまうという問題があった。[0003] As a gas barrier film, a film in which an inorganic compound is provided on a polyethylene terephthalate film, a polypropylene film, or a polyamide film is known. As an example, a film obtained by depositing silicon oxide or aluminum oxide on a film surface (Japanese Patent Publication No. 53-1)
2953, JP-B-62-49856). However, when various articles are packaged and covered with the gas barrier film, heat sealing is usually employed. At this time, naturally, heat and stress act on the film. When these gas barrier films are used, an elongation phenomenon occurs in the film due to the heat and stress, and the inorganic compound layer cannot follow this elongation phenomenon, a minute crack is generated, and the gas barrier property is reduced. There was a problem.
【0004】そのため、特開平4−139233号公報
には透明フィルムの少なくとも片面に、ガスバリア性を
有する無機化合物層が設けられて成るガスバリアフィル
ムが開示されているが、ガラス転移温度が140℃以上
の特定のフィルムを使用する必要があった。また、特開
平6−344495号公報には、エレクトロルミネッセ
ンス素子の保護に使用されるガスバリアーフィルムの開
示があるが透明性が悪い。For this reason, Japanese Patent Application Laid-Open No. Hei 4-139233 discloses a gas barrier film in which an inorganic compound layer having a gas barrier property is provided on at least one side of a transparent film. Certain films had to be used. Japanese Patent Application Laid-Open No. Hei 6-344495 discloses a gas barrier film used for protecting an electroluminescence element, but has poor transparency.
【0005】[0005]
【発明が解決しようとする課題】本発明は、基材として
ガラス転移温度が高いフィルムを用いない場合にも、使
用時に作用する熱や応力による性能低下が少なく、ガス
バリア性を充分に発揮できる透明性に優れたフィルムを
提供するものである。According to the present invention, even when a film having a high glass transition temperature is not used as a base material, the performance is not significantly reduced by heat or stress acting during use, and the gas barrier property can be sufficiently exhibited. It is intended to provide a film having excellent properties.
【0006】[0006]
【課題を解決するための手段】本発明者は、従来技術の
有する上記問題を解決するため、種々研究の結果、汎用
のフィルムを用いた場合にも、熱や応力が作用しても性
能低下を生ずることの少ないガスバリアフィルムが得ら
れることを見い出し、本発明を完成するに至った。即
ち、本発明に係るガスバリアフィルムは、透明フィルム
の少なくとも片面に、水素濃度が50原子%以下であ
り、かつ、酸素濃度が2〜20原子%であるダイヤモン
ド状炭素膜を形成することを特徴とするものである。In order to solve the above-mentioned problems of the prior art, the present inventor has conducted various studies. As a result, even when a general-purpose film is used, the performance is reduced even when heat or stress is applied. The inventors have found that a gas barrier film which does not cause any problem can be obtained, and have completed the present invention. That is, the gas barrier film according to the present invention is characterized in that a diamond-like carbon film having a hydrogen concentration of 50 atomic% or less and an oxygen concentration of 2 to 20 atomic% is formed on at least one surface of the transparent film. Is what you do.
【0007】[0007]
【発明の実施の形態】本発明でいうダイヤモンド状炭素
膜とは、非晶質のダイヤモンドライクカーボンであり、
ダイヤモンド、グラファイト、ポリマーの各成分を含ん
でいる。このダイヤモンド状炭素膜は、これらの成分の
混合する割合で性質が異なり、高い硬度を有するダイヤ
モンド状炭素膜であっても、必ずしも水蒸気や酸素等の
ガスバリア層として働くわけではない。BEST MODE FOR CARRYING OUT THE INVENTION The diamond-like carbon film referred to in the present invention is an amorphous diamond-like carbon,
Contains diamond, graphite, and polymer components. The properties of the diamond-like carbon film differ depending on the mixing ratio of these components. Even a diamond-like carbon film having high hardness does not always function as a gas barrier layer for water vapor, oxygen, and the like.
【0008】従来、ダイヤモンド状炭素膜の膜質は、そ
の水素濃度を指標として考えられてきた。即ち、水素濃
度が低くなれば、膜はダイヤモンドの性質をより呈し、
一方、水素濃度が高くなると、グラファイトまたはポリ
マーの性質を呈して膜の硬度が低下する。しかし、ダイ
ヤモンド状炭素膜のガスバリアー性は、必ずしも膜の硬
度と対応関係にはないと考えられている。また、ガスバ
リアー性は、膜を構成する原子同士のつながりが切れる
サイトの濃度によって決まるものと考えられるため、水
素濃度の低減がガスバリアー性の向上に寄与するものと
考えられてきた。Conventionally, the film quality of a diamond-like carbon film has been considered using its hydrogen concentration as an index. That is, the lower the hydrogen concentration, the more the film exhibits the properties of diamond,
On the other hand, when the hydrogen concentration increases, the hardness of the film decreases due to the properties of graphite or polymer. However, it is considered that the gas barrier properties of the diamond-like carbon film do not always correspond to the hardness of the film. Further, since the gas barrier property is considered to be determined by the concentration of the site where the atoms constituting the film are disconnected, it has been considered that the reduction of the hydrogen concentration contributes to the improvement of the gas barrier property.
【0009】本発明者は、膜のガスバリアー性を改善す
るため、膜中の水素原子含有量の低減を検討してきた
が、得られる膜の透明性は必ずしも好ましいものではな
かった。そこで、膜内の水素濃度を増加させずに、この
膜の透明性を上げるための方法を検討したところ、驚く
べきことに、従来においてガスバリアー性を悪化させる
要因と考えられてきた酸素原子を、膜中で適度に含有さ
せることによって、膜のガスバリアー性を悪化させるこ
となく、透明性を上げる効果が得られることが分かっ
た。すなわち、本発明の水蒸気や酸素等のバリア層とし
て働くダイヤモンド状炭素膜に含まれる水素濃度は、5
0原子%以下であり、好ましくは45原子%以下、さら
に好ましくは40原子%以下である。また、酸素濃度
は、2〜20原子%であり、好ましくは2〜15原子
%、さらに好ましくは2〜10原子%である。The present inventor has studied the reduction of the hydrogen atom content in the film in order to improve the gas barrier properties of the film, but the transparency of the obtained film was not always preferable. Therefore, when a method for increasing the transparency of the film was examined without increasing the hydrogen concentration in the film, surprisingly, it was surprising that oxygen atoms, which had conventionally been considered to be a cause of deteriorating gas barrier properties, were changed. It has been found that the effect of increasing the transparency can be obtained without appropriately deteriorating the gas barrier properties of the film by appropriately adding it in the film. That is, the concentration of hydrogen contained in the diamond-like carbon film acting as a barrier layer for water vapor or oxygen of the present invention is 5%.
It is 0 atomic% or less, preferably 45 atomic% or less, more preferably 40 atomic% or less. Further, the oxygen concentration is 2 to 20 at%, preferably 2 to 15 at%, and more preferably 2 to 10 at%.
【0010】上記ダイヤモンド状炭素膜を形成するため
には、炭素と水素を含有する原料ガスが使用される。炭
素と水素を含有する原料ガスとしては、例えば、メタ
ン、エタン、プロパン、ブタン、ペンタン、ヘキサン等
のアルカン系ガス類;エチレン、プロピレン、ブテン、
ペンテン等のアルケン系ガス類、ペンタジエン、ブタジ
エン等のアルカジエン系ガス類;アセチレン、メチルア
セチレン等のアルキン系ガス類;ベンゼン、トルエン、
キシレン、インデン、ナフタレン、フェナントレン等の
芳香族炭化水素系ガス類;シクロプロパン、シクロヘキ
サン等のシクロアルケン系ガス類;メタノール、エタノ
ール等のアルコール系ガス類、アセトン、メチルエチル
ケトン等のケトン系ガス類;メタナール、エタナール等
のアルデヒド系ガス類等が挙げられる。上記ガスは、単
独で使用されても良いし、二種以上が併用されても良
い。In order to form the diamond-like carbon film, a source gas containing carbon and hydrogen is used. Examples of the raw material gas containing carbon and hydrogen include alkane-based gases such as methane, ethane, propane, butane, pentane, and hexane; ethylene, propylene, butene,
Alkene-based gases such as pentene, alkane-based gases such as pentadiene and butadiene; alkyne-based gases such as acetylene and methylacetylene; benzene, toluene,
Aromatic hydrocarbon gases such as xylene, indene, naphthalene, and phenanthrene; cycloalkene gases such as cyclopropane and cyclohexane; alcohol gases such as methanol and ethanol; ketone gases such as acetone and methyl ethyl ketone; And aldehyde gases such as ethanal. The above gases may be used alone or in combination of two or more.
【0011】また、炭素と水素を含有する原料ガスとし
ては、上記原料ガスとしては、上記原料ガスと水素ガス
の混合物;一酸化炭素ガス、二酸化炭素ガス等炭素と酸
素のみから構成されるガスと上記ガスの混合物;一酸化
炭素ガス、二酸化炭素ガス等炭素と酸素のみから構成さ
れるガスと水素ガスとの混合物;一酸化炭素ガス、二酸
化炭素ガス等炭素と酸素のみから構成されるガスと酸素
ガス、水蒸気との混合物などが挙げられる。さらに、炭
素と水素を含有する原料ガスとしては、上記原料ガスと
希ガスとの混合ガスが挙げられる。例えば、ヘリウム、
アルゴン、ネオン、キセノン等が挙げられ、これらは単
独で使用されても良いし、2種以上が併用されても良
い。The raw material gas containing carbon and hydrogen includes a mixture of the raw material gas and hydrogen gas; a gas composed of only carbon and oxygen such as carbon monoxide gas and carbon dioxide gas. A mixture of the above gases; a mixture of hydrogen gas and a gas composed only of carbon and oxygen, such as carbon monoxide gas and carbon dioxide gas; and a gas composed of only carbon and oxygen, such as carbon monoxide gas and carbon dioxide gas, and oxygen Examples thereof include a mixture with gas and water vapor. Further, as the raw material gas containing carbon and hydrogen, a mixed gas of the above raw material gas and a rare gas may be used. For example, helium,
Examples thereof include argon, neon, and xenon, and these may be used alone or in combination of two or more.
【0012】上記混合ガス中における水素ガス、希ガス
の混合量は、使用する装置の種類、混合ガスの種類や成
膜圧力等により変化する。具体的には、成膜されたダイ
ヤモンド状炭素膜に含まれる水素濃度が50原子%にな
るように、好ましくは45原子%以下、さらに好ましく
は40%以下となるように調整し、しかも、酸素濃度が
2〜20%、好ましくは2〜15原子%、さらに好まし
くは2〜10原子%となるように調整する。また、炭素
源としては、黒鉛、ダイヤモンド等の炭素同位体の固体
も使用可能であり、水素ガスや希ガス雰囲気プラズマ中
に設置して使用される。The mixing amount of the hydrogen gas and the rare gas in the mixed gas varies depending on the type of the apparatus used, the type of the mixed gas, the film forming pressure, and the like. Specifically, the concentration of hydrogen contained in the formed diamond-like carbon film is adjusted to be 50 atomic%, preferably 45 atomic% or less, more preferably 40 atomic% or less. The concentration is adjusted so as to be 2 to 20%, preferably 2 to 15% by atom, and more preferably 2 to 10% by atom. Further, as a carbon source, solids of carbon isotopes such as graphite and diamond can be used, and they are used by being installed in a plasma of a hydrogen gas or a rare gas atmosphere.
【0013】上記原料ガスをプラズマによって励起する
手段としては、例えば、直流を印加してプラズマ分解す
る方法;高周波を印加してプラズマ分解する方法;マイ
クロ波放電によってプラズマ分解する方法;電子サイク
ロトロン共鳴によってプラズマ分解する方法;熱フィラ
メントによる加熱によって熱分解する方法等が挙げられ
る。これらの中で、直流プラズマを印加する方法は、基
板が絶縁物であるプラスチックスフィルムである場合に
はプラズマが発生しないため、好ましくない。また、熱
フィラメント法を用いる場合には、フィラメントを50
0℃以上と高温にしなければならないため、基板の耐熱
性を考慮すると好ましくない場合がある。マイクロ波プ
ラズマ法や電子サイクロトロン共鳴によってプラズマを
分解する方法は成膜速度が速く成膜温度が低いので好ま
しい。また、大面積の樹脂フィルムに成膜する場合にお
いては、高周波プラズマ法を用いるのが好ましい。ま
た、ダイヤモンド状炭素膜を形成する方法としては、イ
オンビームスパッタリングやイオンプレーティング法等
の物理蒸着法があり、これらの方法を採用してもよい。Means for exciting the raw material gas by plasma include, for example, a method of applying a direct current to perform plasma decomposition; a method of applying a high frequency to perform plasma decomposition; a method of performing plasma decomposition by microwave discharge; A method of plasma decomposition; a method of thermal decomposition by heating with a hot filament, and the like. Among them, the method of applying DC plasma is not preferable because the plasma is not generated when the substrate is a plastic film which is an insulator. When the hot filament method is used, the filament is 50
Since the temperature must be as high as 0 ° C. or more, it may not be preferable in consideration of the heat resistance of the substrate. A microwave plasma method or a method of decomposing plasma by electron cyclotron resonance is preferable because a film formation rate is high and a film formation temperature is low. In the case of forming a film on a large-area resin film, it is preferable to use a high-frequency plasma method. In addition, as a method for forming the diamond-like carbon film, there are physical vapor deposition methods such as ion beam sputtering and ion plating, and these methods may be employed.
【0014】上記のダイヤモンド状炭素膜の膜厚は必要
に応じて決定されるが、厚くなると基材フィルムとの密
着性が悪くなったり、膜応力により被覆物が変形した
り、透明性が悪くなるため、0.5μm以下が好まし
く、より好ましくは0.1μm以下、さらに好ましくは
0.05μm以下が好ましい。The thickness of the diamond-like carbon film is determined as necessary. When the thickness is large, the adhesion to the substrate film is deteriorated, the coating is deformed by film stress, and the transparency is deteriorated. Therefore, the thickness is preferably 0.5 μm or less, more preferably 0.1 μm or less, and still more preferably 0.05 μm or less.
【0015】上記のプラスチックスフィルム基材として
は、例えば、ポリエチレンテレフタレート等のポリエス
テルフィルム;ポリエチレン、ポリプロピレン、ポリブ
テン等のポリオレフィンフィルム;ポリスチレンフィル
ム;ポリアミドフィルム;ポリカーボネートフィルム;
ポリアクリロニトリルフィルム;ポリエーテルイミド;
ポリエーテルサルフォン;ポリサルフォン;ポリイミド
等が使用可能である。Examples of the above plastics film substrate include polyester films such as polyethylene terephthalate; polyolefin films such as polyethylene, polypropylene and polybutene; polystyrene films; polyamide films;
Polyacrylonitrile film; polyetherimide;
Polyether sulfone; polysulfone; polyimide and the like can be used.
【0016】基材フィルムの光線透過率は85%以上と
するのが好ましく、より好ましくは88%以上である。
また、上記プラスチックフィルム基材は、延伸フィルム
または未延伸フィルムでも良く、厚さは0.01〜1m
mが好ましい。フィルム表面の平滑性はできるかぎり高
い方が好ましい。表面平滑性が低いと、ガスバリアー性
が低下するおそれがあるためである。具体的には、表面
粗さを表すRmax(山と谷の差の最大値)が0.10
μm以下が好ましく、さらに好ましくは0.05μm以
下である。平均粗さを表すRaが,10nm以下,好ま
しくは5nm以下である。The light transmittance of the substrate film is preferably at least 85%, more preferably at least 88%.
The plastic film substrate may be a stretched film or an unstretched film, and has a thickness of 0.01 to 1 m.
m is preferred. The smoothness of the film surface is preferably as high as possible. This is because if the surface smoothness is low, gas barrier properties may be reduced. Specifically, Rmax (the maximum value of the difference between the peak and the valley) representing the surface roughness is 0.10.
μm or less, more preferably 0.05 μm or less. Ra representing the average roughness is 10 nm or less, preferably 5 nm or less.
【0017】上記プラスチックスフィルム基材表面の密
着性を高めるために、必要に応じて、該基材表面を脱
脂、脱水するための洗浄等の清浄化処理、基材表面に真
空容器内でHe等の不活性ガスや酸素ガス等の活性ガス
によるプラズマ処理などの公知の処理を行っても良い。In order to enhance the adhesiveness of the surface of the plastic film base material, if necessary, a cleaning treatment such as cleaning for degreasing and dehydrating the base material surface, and applying He gas to the base material surface in a vacuum container. A known process such as a plasma process using an inert gas such as an inert gas or an active gas such as an oxygen gas may be performed.
【0018】<ダイヤモンド状炭素膜の生成方法>以
下、図面を参照しながら本発明に使用される装置を説明
する。図1は、本発明のダイヤモンド状炭素膜を生成す
る装置の1例を示す模式図である。図1において、1は
真空容器であり、2は高周波電極、3はSiウエハーに
貼り付けた基材フィルムである。4は整合器、5は高周
波電源、6は熱電対、7は冷却板、8はガス導入管であ
る。<Method for Producing Diamond-like Carbon Film> The apparatus used in the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing one example of an apparatus for producing a diamond-like carbon film of the present invention. In FIG. 1, 1 is a vacuum container, 2 is a high-frequency electrode, and 3 is a base film attached to a Si wafer. 4 is a matching device, 5 is a high-frequency power supply, 6 is a thermocouple, 7 is a cooling plate, and 8 is a gas introduction pipe.
【0019】上記基材フィルムの温度制御は、液体ある
いは気体の循環方式、赤外線、通電加熱等の方法によっ
て行われるが、少なくとも基材フィルムのガラス転移点
以下に保持されるのが好ましく、そのために熱容量の大
きい液体の循環方式が好ましい。この際、循環させる液
体としては、所定の温度に加温あるいは冷却された液体
が挙げられ、循環される液体としては、水、エチレング
リコール(不凍液)、アルコール類、さらに低温化する
場合には、液体窒素、液体ヘリウム等が好適に使用され
る。The temperature of the substrate film is controlled by a method of circulating a liquid or gas, infrared rays, electric heating, or the like. It is preferable that the temperature is maintained at least below the glass transition point of the substrate film. A liquid circulation system having a large heat capacity is preferred. At this time, the liquid to be circulated may be a liquid heated or cooled to a predetermined temperature, and the liquid to be circulated may be water, ethylene glycol (antifreeze), alcohols. Liquid nitrogen, liquid helium and the like are preferably used.
【0020】使用できる原料ガスの組成範囲を広げるた
り、膜の質を良くするために基材に直流バイアスを印加
するのが好ましく、直流バイアス値としては−500〜
100Vが好ましく、より好ましくは−400〜10V
である。It is preferable to apply a DC bias to the substrate in order to widen the range of the composition of the usable source gas or to improve the quality of the film.
100V is preferable, and more preferably -400 to 10V
It is.
【0021】次に成膜操作について説明する。まず、真
空容器1内の冷却板7の上にSiウエハーに貼り付けた
プラスチックフィルム基材を設置した後、真空容器内を
高真空とする。このときの真空度は、他の不純物ガスの
残留による成膜への影響をなくすために10-4Torr
以下が好ましい。次いで、ガス導入管から原料ガスを導
入して所定の圧力に保つ。このときの圧力は1×10-3
〜10Torrが好ましい。Next, a film forming operation will be described. First, after a plastic film substrate attached to a Si wafer is placed on the cooling plate 7 in the vacuum vessel 1, the inside of the vacuum vessel is made high vacuum. The degree of vacuum at this time is set to 10 −4 Torr in order to eliminate the influence on the film formation due to the remaining impurity gas.
The following is preferred. Next, a raw material gas is introduced from a gas introduction pipe and maintained at a predetermined pressure. The pressure at this time is 1 × 10 -3
-10 Torr is preferred.
【0022】本発明に係るガスバリアフィルムは、その
所定枚数を接着剤等や熱融着により接合する方法等によ
り一体化せしめた積層タイプのものであってもよい。ま
た、使用時におけるヒートシール性を向上させるため、
ホットメルト接着剤を設けることができる。この接着剤
層はダイヤモンド状炭素膜層に設けるのが好適である
が、透明フィルム上に設けることもできる。ホットメル
ト接着剤は汎用のものが使え、エチレン−酢酸ビニル共
重合体、ポリエチレン、ポリプロピレン等を主成分とす
るものを使用できる。The gas barrier film according to the present invention may be a laminated type in which a predetermined number of the films are integrated by a method such as bonding with an adhesive or the like or heat fusion. In addition, in order to improve the heat sealing property at the time of use,
A hot melt adhesive can be provided. This adhesive layer is preferably provided on the diamond-like carbon film layer, but may be provided on a transparent film. As the hot melt adhesive, a general-purpose adhesive can be used, and an adhesive containing ethylene-vinyl acetate copolymer, polyethylene, polypropylene or the like as a main component can be used.
【0023】[0023]
(実施例1)厚さ50μmのポリエチレンテレフタレー
トフィルム(東レ株式会社製「ルミラー高透明タイ
プ」)をSiウエハーに貼り付けた後、図1に示す真空
容器1内の冷却板7上に設置し、真空容器内を1×10
-5Torrに減圧した。次いで、ガスを導入管8より導
入する。C2H2を50sccmに設定する。反応室の圧
力を10×10-3Torrにした後、周波数13.56
MHz、150Wの高周波電力を印加することによっ
て、2分間成膜を行った。(Example 1) A polyethylene terephthalate film ("Lumirror highly transparent type" manufactured by Toray Industries, Inc.) having a thickness of 50 μm was attached to a Si wafer, and then placed on a cooling plate 7 in a vacuum vessel 1 shown in FIG. 1 × 10 inside the vacuum vessel
The pressure was reduced to -5 Torr. Next, gas is introduced from the introduction pipe 8. Set C 2 H 2 to 50 sccm. After the pressure in the reaction chamber was set to 10 × 10 −3 Torr, the frequency was 13.56.
The film was formed for 2 minutes by applying a high frequency power of 150 MHz at 150 MHz.
【0024】透過電子顕微鏡の観察により決定した膜の
厚さは約0.1μmであった。得られた膜をラマン分光
法で評価した結果、ダイヤモンド状炭素膜であることが
確認された。また、膜の組成をSIMSを用いて決定す
ると、ダイヤモンド状炭素膜には、水素が43原子%、
酸素が5原子%含まれていた。The thickness of the film determined by observation with a transmission electron microscope was about 0.1 μm. As a result of evaluating the obtained film by Raman spectroscopy, it was confirmed that the film was a diamond-like carbon film. When the composition of the film is determined using SIMS, the diamond-like carbon film contains 43 atomic% of hydrogen,
Oxygen was contained at 5 atomic%.
【0025】(実施例2)厚さ50μmのポリエチレン
テレフタレートフィルム(東レ株式会社製「ルミラ
ー」)に、実施例1と同様の方法で成膜した。Example 2 A film was formed on a 50 μm thick polyethylene terephthalate film (“Lumirror” manufactured by Toray Industries, Inc.) in the same manner as in Example 1.
【0026】(実施例3)厚さ12μmのポリエチレン
テレフタレートフィルム(東セロ株式会社製「OPE
T」)に、実施例1と同様の方法で成膜した。Example 3 A polyethylene terephthalate film having a thickness of 12 μm (“OPE” manufactured by Tocelo Co., Ltd.)
T)), a film was formed in the same manner as in Example 1.
【0027】(比較例1)厚さ50μmのポリエチレン
テレフタレートフィルム(東レ株式会社製「ルミラー高
透明タイプ」)に、実施例1と同様の方法で成膜した。Comparative Example 1 A film was formed on a 50 μm thick polyethylene terephthalate film (“Lumirror highly transparent type” manufactured by Toray Industries, Inc.) in the same manner as in Example 1.
【0028】(比較例2)厚さ50μmのポリエチレン
テレフタレートフィルム(東レ株式会社製「ルミラ
ー」)に、実施例1と同様の方法で成膜した。Comparative Example 2 A film was formed on a polyethylene terephthalate film ("Lumirror" manufactured by Toray Industries, Inc.) having a thickness of 50 μm in the same manner as in Example 1.
【0029】(比較例3)厚さ12μmのポリエチレン
テレフタレートフィルム(東セロ株式会社製「OPE
T」)に、実施例1と同様の方法で成膜した。Comparative Example 3 A polyethylene terephthalate film having a thickness of 12 μm (“OPE” manufactured by Tosero Corporation)
T)), a film was formed in the same manner as in Example 1.
【0030】<ダイヤモンド状炭素膜の評価>上記実施
例、比較例において基材に形成されたダイヤモンド状炭
素膜を、下記の評価方法により蒸着したフィルム及び基
材フィルムについて評価を行い、その結果を表1に示
す。 (1)透湿度 Mocon社製ガス透過率測定装置を使用して、40
℃、相対湿度90%の条件で測定した。 (2)酸素透過度 ヤナコ社製ガス透過率測定装置を使用して、23℃の酸
素雰囲気で行った。 (3)光線透過率、かすみ度(HAZE)、b値(黄、
青の割合) 積分球式ヘイズメータ(日本電色製ND−1001D)
を用いて測定した。<Evaluation of diamond-like carbon film> The diamond-like carbon film formed on the substrate in the above Examples and Comparative Examples was evaluated for a film and a substrate film deposited by the following evaluation method. It is shown in Table 1. (1) Moisture permeability Using a gas permeability measuring device manufactured by Mocon, 40
The measurement was performed under the conditions of ° C and 90% relative humidity. (2) Oxygen permeability Using a gas permeability measuring device manufactured by Yanaco Co., Ltd., the measurement was performed in an oxygen atmosphere at 23 ° C. (3) Light transmittance, haze (HAZE), b value (yellow,
(Ratio of blue) Integrating sphere haze meter (ND-1001D manufactured by Nippon Denshoku)
It measured using.
【0031】[0031]
【表1】 [Table 1]
【0032】<耐屈曲性の評価> (実施例4)実施例と同様の条件で作製したフィルムを
ゲルボフレックステスタを用いて100回屈曲し、透湿
度、酸素等過度を測定した。<Evaluation of Flex Resistance> (Example 4) A film produced under the same conditions as in the example was bent 100 times using a Gelboflex tester, and the moisture permeability, oxygen and other excess were measured.
【0033】(比較例4)公知の真空蒸着装置で、蒸発
源としてSiOを用いて、圧力6×10-5Torrの酸
素雰囲気下で、厚さ12μmのポリエチレンテレフタレ
ートフィルム(東レ株式会社製「ルミラー」)の基材表
面に約0.1μmの酸化ケイ素を成膜した。ゲルボフレ
ックステスタを用いて100回屈曲し、その前後の透湿
度、酸素透過度を測定した。(Comparative Example 4) A 12 μm-thick polyethylene terephthalate film (“Lumirror” manufactured by Toray Industries, Inc.) in a known vacuum evaporation apparatus using SiO as an evaporation source under an oxygen atmosphere at a pressure of 6 × 10 −5 Torr. A film of silicon oxide having a thickness of about 0.1 μm was formed on the surface of the base material. It was bent 100 times using a gelbo flex tester, and the moisture permeability and oxygen permeability before and after that were measured.
【0034】[0034]
【表2】 [Table 2]
【0035】<EL素子の試作> (実施例5)ガラス転移70℃、波長550nmの光線
の透過率88%、厚さ50μmのポリエステルフィルム
(東レ株式会社製「ルミラー」の片面に、ダイヤモンド状
炭素膜(DLC)をプラズマCVD法により膜厚が10
0nmになるように成膜した。そしてこの蒸着フィルム
2枚をフィルム−DLC−フィルム−DLCの順になる
ように重ね合わせ、透明接着剤により接合一体化した。
次に、DLC層上にエチレン−酢酸ビニル共重合体(酢
酸ビニル含量8重量%)から成るホットメルト接着剤を
溶融押出法により形成することにより、積層タイプのガ
スバリアフィルムを得た。<Trial Production of EL Element> (Example 5) A polyester film having a glass transition temperature of 70 ° C., a transmittance of light having a wavelength of 550 nm of 88%, and a thickness of 50 μm (one side of “Lumirror” manufactured by Toray Industries, Inc. The film (DLC) has a thickness of 10 by plasma CVD.
The film was formed to have a thickness of 0 nm. Then, the two vapor-deposited films were overlapped in the order of film-DLC-film-DLC, and bonded and integrated with a transparent adhesive.
Next, a hot melt adhesive composed of an ethylene-vinyl acetate copolymer (vinyl acetate content: 8% by weight) was formed on the DLC layer by a melt extrusion method to obtain a laminated gas barrier film.
【0036】一方、これとは別にポリエチレンテレフタ
レートフィルムの片面に酸化インジウムと酸化スズの混
合物から成る透明電極層を設けて成る透明電極と、硫化
亜鉛系の蛍光粉末をシアノエチル化セルロース中に分散
した発光層と酸化チタン粉末をシアノエチル化セルロー
ス中に分散した絶縁層と、アルミニウム製の透明電極と
をこの順序で積層したエレクトロルミネッセンス素子を
用意する。そして、この素子の両面に上記積層タイプの
ガスバリアフィルムをホットメルト接着剤層が内側にな
るように重ね合わせ、温度130℃、ロール線圧5kg
/cm、張力3kgfの条件でロールを用いて加熱加圧
することによりガスバリアフィルムで被覆保護した構造
のエレクトロルミネッセンス装置を得た。このエレクト
ロルミネッセンス装置を100V、400Hzの電源に
より連続動作させ、その輝度半減期を測定したところ、
2000時間であった。On the other hand, a transparent electrode in which a transparent electrode layer made of a mixture of indium oxide and tin oxide is provided on one side of a polyethylene terephthalate film, and a luminescent material obtained by dispersing zinc sulfide-based fluorescent powder in cyanoethylated cellulose. An electroluminescent device is prepared in which an insulating layer in which a layer and a titanium oxide powder are dispersed in cyanoethylated cellulose and a transparent electrode made of aluminum are laminated in this order. Then, the gas barrier film of the above-mentioned lamination type is superimposed on both sides of this element so that the hot melt adhesive layer is on the inside, and the temperature is 130 ° C. and the roll linear pressure is 5 kg.
By applying heat and pressure using a roll under the conditions of / cm and a tension of 3 kgf, an electroluminescence device having a structure covered and protected by a gas barrier film was obtained. When this electroluminescent device was continuously operated by a power supply of 100 V and 400 Hz, and its luminance half-life was measured,
2000 hours.
【0037】(比較例5)ガラス転移温度70℃で、波
長550nmの光線透過率88%、厚さ50μmのポリ
エチレンテレフタレートフィルム(東レ株式会社製「ル
ミラー」)をガスバリアフィルムの基材として用い酸化
珪素をガスバリア層として用いること以外は実施例4と
同様にして、積層タイプのガスバリアフィルムおよびエ
レクトロルミネッセンス装置を得た。このエレクトロル
ミネッセンス装置を実施例と同様に連続作動させたとこ
ろ、約200時間で透過水分により発光面の部分的黒化
現象を生じ、また、輝度半減期も800時間と短かっ
た。Comparative Example 5 A polyethylene terephthalate film ("Lumirror" manufactured by Toray Industries, Inc.) having a glass transition temperature of 70 ° C., a light transmittance of 550 nm at a wavelength of 88%, and a thickness of 50 μm was used as a substrate of a gas barrier film. Was used as a gas barrier layer in the same manner as in Example 4 to obtain a laminated gas barrier film and an electroluminescence device. When this electroluminescent device was continuously operated in the same manner as in the example, a partial blackening phenomenon of the light emitting surface was caused by the permeated moisture in about 200 hours, and the luminance half-life was as short as 800 hours.
【0038】[0038]
【発明の効果】本発明は上記のように構成されており、
基材として特別なフィルムを用いることなく、汎用の透
明フィルムを使用した場合にも、使用時に作用する熱や
応力による性能低下が少なく、ガスバリア性を充分に発
揮できる。The present invention is configured as described above,
Even when a general-purpose transparent film is used without using a special film as the base material, the performance is less reduced by heat and stress acting during use, and the gas barrier properties can be sufficiently exhibited.
【0039】[0039]
【図1】図1は、本発明に係わる積層フィルムを生成す
るための成膜装置を示す概略図である。FIG. 1 is a schematic diagram showing a film forming apparatus for producing a laminated film according to the present invention.
1 真空容器 2 高周波電極 3 Siウェハーに貼り付けた基材フィルム 4 整合器 5 高周波電源 6 熱電対 7 冷却板 8 ガス導入管 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 High frequency electrode 3 Base film stuck on Si wafer 4 Matching device 5 High frequency power supply 6 Thermocouple 7 Cooling plate 8 Gas introduction pipe
Claims (1)
濃度が50原子%以下であり、かつ酸素濃度が2〜20
原子%であるダイヤモンド状炭素膜が形成されているこ
とを特徴とするエレクトロルミネッセンス素子用保護フ
ィルム。At least one surface of a transparent film has a hydrogen concentration of 50 atomic% or less and an oxygen concentration of 2 to 20%.
A protective film for an electroluminescent device, wherein a diamond-like carbon film having an atomic percentage of at least one is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9173758A JPH1126155A (en) | 1997-06-30 | 1997-06-30 | Protection film for electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9173758A JPH1126155A (en) | 1997-06-30 | 1997-06-30 | Protection film for electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1126155A true JPH1126155A (en) | 1999-01-29 |
Family
ID=15966603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9173758A Pending JPH1126155A (en) | 1997-06-30 | 1997-06-30 | Protection film for electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1126155A (en) |
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| WO2005069696A1 (en) * | 2004-01-19 | 2005-07-28 | Pioneer Corporation | Protective film and organic el device |
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| WO2009038143A1 (en) * | 2007-09-19 | 2009-03-26 | Asahi Glass Company, Limited | Conductive laminate |
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| US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
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| JP2007188890A (en) * | 1999-06-04 | 2007-07-26 | Semiconductor Energy Lab Co Ltd | Method for manufacturing electro-optical device |
| US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
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| WO2001062605A1 (en) * | 2000-02-24 | 2001-08-30 | Mitsubishi Shoji Plastics Corporation | Plastic container for liquid containing volatile organic substance |
| JP2002033195A (en) * | 2000-05-12 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Light emitting device |
| JP2002208477A (en) * | 2000-11-10 | 2002-07-26 | Semiconductor Energy Lab Co Ltd | Light emitting device |
| US7443097B2 (en) | 2001-02-21 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic equipment |
| US9312323B2 (en) | 2002-01-24 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator |
| JP2013175470A (en) * | 2002-01-24 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | Light emitting device |
| JP2012094538A (en) * | 2002-01-24 | 2012-05-17 | Semiconductor Energy Lab Co Ltd | Manufacturing method for light-emitting device |
| US8779467B2 (en) | 2002-01-24 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having a terminal portion |
| US9627459B2 (en) | 2002-01-24 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device having sealing material |
| CN100367530C (en) * | 2002-09-26 | 2008-02-06 | 奇美电子股份有限公司 | Image display device, organic electroluminescent element, and method for manufacturing image display device |
| FR2845204A1 (en) * | 2003-01-07 | 2004-04-02 | Thomson Licensing Sa | Organic electroluminescent panel with encapsulation layer on the basis of amorphous carbon sealed with a substrate supporting two networks of electrodes |
| WO2005069696A1 (en) * | 2004-01-19 | 2005-07-28 | Pioneer Corporation | Protective film and organic el device |
| JPWO2009038143A1 (en) * | 2007-09-19 | 2011-01-06 | 旭硝子株式会社 | Conductive laminate |
| WO2009038143A1 (en) * | 2007-09-19 | 2009-03-26 | Asahi Glass Company, Limited | Conductive laminate |
| US20160207825A1 (en) * | 2013-08-29 | 2016-07-21 | Corning Incorporated | Laminates with a polymeric scratch resistant layer |
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