JPH11268968A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JPH11268968A JPH11268968A JP7249298A JP7249298A JPH11268968A JP H11268968 A JPH11268968 A JP H11268968A JP 7249298 A JP7249298 A JP 7249298A JP 7249298 A JP7249298 A JP 7249298A JP H11268968 A JPH11268968 A JP H11268968A
- Authority
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- Prior art keywords
- circuit board
- ceramic
- copper
- substrate
- metal
- Prior art date
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Abstract
(57)【要約】
【課題】金属回路板とセラミックス基板との接合強度を
高めセラミックス回路基板全体としての機械的強度を改
善し、金属回路板の剥離や膨れなどの欠陥の発生が少な
く品質の安定したセラミックス回路基板を提供する。
【解決手段】焼結助剤が含有されたセラミックス基板に
金属回路板を直接接合してなるセラミックス回路基板に
おいて、上記セラミックス基板と上記金属回路板との接
合界面の未接合部面積が接合界面面積の７．０％以下で
あることを特徴とする。
[PROBLEMS] To improve the mechanical strength of a ceramic circuit board as a whole by increasing the bonding strength between a metal circuit board and a ceramic substrate, and to reduce the occurrence of defects such as peeling and swelling of the metal circuit board and to improve the quality. Provide a stable ceramic circuit board. In a ceramic circuit board obtained by directly bonding a metal circuit board to a ceramic substrate containing a sintering aid, the unbonded area of the bonding interface between the ceramic substrate and the metal circuit board is equal to the bonding interface area. 7.0% or less.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置等に使用
されるセラミックス回路基板に関する。The present invention relates to a ceramic circuit board used for a semiconductor device or the like.
【０００２】[0002]
【従来の技術】従来からアルミナ（Ａｌ2 Ｏ3 ）焼結体
などのように絶縁性に優れたセラミックス基板の表面
に、導電性を有する金属回路板をろう材や接着剤やメタ
ライズ金属層で一体に接合したセラミックス回路基板が
パワートランジスターモジュール用基板やスイッチング
電源モジュール用基板として広く普及している。2. Description of the Related Art Conventionally, a conductive metal circuit board is formed on a surface of a ceramic substrate having excellent insulation properties, such as an alumina (Al 2 O 3 ) sintered body, with a brazing material, an adhesive, or a metallized metal layer. 2. Description of the Related Art A ceramic circuit board integrally joined has been widely used as a substrate for a power transistor module or a substrate for a switching power supply module.
【０００３】しかしながら上記セラミックス回路基板に
おいては、金属回路板とセラミックス基板との間に、ろ
う材や接着剤やメタライズ層のような介在物が存在する
ため、両者間の熱抵抗が大きくなり、金属回路板上に設
けられた半導体素子の発熱を系外に迅速に放熱させるこ
とが困難であるという問題点があった。[0003] However, in the above-mentioned ceramic circuit board, since an intervening material such as a brazing material, an adhesive or a metallized layer exists between the metal circuit board and the ceramic substrate, the thermal resistance between the two increases, and the metal circuit board and the metallized layer become large. There is a problem that it is difficult to quickly radiate heat generated by the semiconductor element provided on the circuit board to the outside of the system.
【０００４】このような問題点を解消するため、近年、
上記ろう材や接着剤やメタライズ層を使用せずに、所定
形状に打ち抜いた金属回路板をセラミックス基板上に接
触配置させて加熱するだけで直接接合する方法が検討さ
れている。すなわち、直接接合法は、セラミックスと金
属とを、ろう材層や接着剤層やメタライズ層などの接合
層を介在させずに直接的に接合する方法である。この直
接接合法では金属中あるいは金属表面に存在する結合剤
（銅の場合は酸素）と金属との共晶液相が生成されて両
部材が直接的に接合される。In order to solve such problems, in recent years,
A method of directly joining a metal circuit board punched into a predetermined shape on a ceramic substrate and heating it without using the brazing material, adhesive or metallized layer has been studied. That is, the direct joining method is a method of directly joining ceramics and a metal without interposing a joining layer such as a brazing material layer, an adhesive layer, and a metallized layer. In this direct joining method, a eutectic liquid phase is generated between the metal and a binder (oxygen in the case of copper) existing in the metal or on the metal surface, and the two members are directly joined.
【０００５】図３〜図５はそれぞれ従来のセラミックス
回路基板の例を示す断面図である。セラミックス基板の
材質としては、アルミナ（Ａｌ2 Ｏ3 ），ジルコニア
（ＺｒＯ2 ），ムライト等の酸化物系セラミックス焼結
体や窒化アルミニウム （ＡｌＮ）などの窒化物系焼結
体が使用される。図３は結合剤としての酸素を含有しな
い銅回路板４をＡｌ2 Ｏ3 基板２表面に直接接合したセ
ラミックス回路基板１を示す。なお接合時に共晶液相を
生成するために、銅回路板４表面には所定厚さの表面酸
化層（酸化銅層）７が予め形成されている。なお、図３
には説明図として表面酸化層を拡大して示しており、表
面酸化層の実際の厚さ、寸法は実際とは異なる。FIGS. 3 to 5 are sectional views showing examples of conventional ceramic circuit boards. As the material of the ceramic substrate, alumina (Al 2 O 3 ), zirconia
An oxide ceramic sintered body such as (ZrO 2 ) and mullite and a nitride sintered body such as aluminum nitride (AlN) are used. FIG. 3 shows a ceramic circuit board 1 in which a copper circuit board 4 containing no oxygen as a binder is directly bonded to the surface of an Al 2 O 3 substrate 2. In order to generate a eutectic liquid phase at the time of joining, a surface oxide layer (copper oxide layer) 7 having a predetermined thickness is formed on the surface of the copper circuit board 4 in advance. Note that FIG.
FIG. 1 shows an enlarged view of the surface oxide layer as an explanatory diagram, and the actual thickness and dimensions of the surface oxide layer are different from the actual ones.
【０００６】このセラミックス回路基板１は、例えば図
３に示すようにＡｌ2 Ｏ3 基板２の表面側に金属回路板
としての銅回路板４が直接接合される一方、背面側に裏
銅板としての銅板５も同様に直接接合され、さらに表面
側の銅回路板４の所定位置に図示しない半田層を介して
半導体素子６が一体に接合された構造を有している。In this ceramic circuit board 1, for example, as shown in FIG. 3, a copper circuit board 4 as a metal circuit board is directly joined to the surface side of the Al 2 O 3 substrate 2, while a back copper plate as a backside copper plate is provided on the back side. Similarly, the copper plate 5 has a structure in which the semiconductor element 6 is integrally bonded to a predetermined position of the copper circuit board 4 on the front surface side via a solder layer (not shown).
【０００７】また図４に示す従来のセラミックス回路基
板１ａは、結合剤としての酸素を１００〜１０００ｐｐ
ｍ含有する銅回路基板４ａおよび裏銅板５ａをＡｌ2 Ｏ
3 基板２のそれぞれ表面側および裏面側に直接接合して
形成されている。この場合でも、銅（回路）板中に含有
された酸素が加熱時に接合界面において酸化銅を形成
し、直接接合が行われる。Further, the conventional ceramic circuit board 1a shown in FIG. 4 uses 100 to 1000 pp of oxygen as a binder.
The copper circuit board 4a and back copper plate 5a containing m Al 2 O
The three substrates 2 are directly bonded to the front side and the back side, respectively. Even in this case, oxygen contained in the copper (circuit) plate forms copper oxide at the bonding interface during heating, and direct bonding is performed.
【０００８】なお、上記直接接合法は、Ａｌ2 Ｏ3 など
の酸化物系セラミックスについてのみ直接適用可能であ
り、窒化アルミニウム（ＡｌＮ）基板や窒化けい素（Ｓ
ｉ3Ｎ4 ）基板などの非酸化物系セラミックス基板にそ
のまま適用しても、基板に対する濡れ性が低いため、金
属回路板の充分な接合強度が得られない。The above direct bonding method can be directly applied only to oxide-based ceramics such as Al 2 O 3 , and is applicable to aluminum nitride (AlN) substrates and silicon nitride (S
Even when applied directly to a non-oxide-based ceramic substrate such as an i 3 N 4 ) substrate, sufficient bonding strength of a metal circuit board cannot be obtained due to low wettability to the substrate.
【０００９】そこで、非酸化物系セラミックス基板を使
用する場合には、予めセラミックス基板表面に酸化物層
を形成し、基板に対する濡れ性を高める必要がある。図
５はセラミックス基板としてＡｌＮ基板２ａを使用した
セラミックス回路基板１ｂの構成例を示す断面図であ
る。この場合、金属回路板４ａおよび銅板５ａの接合操
作前に、予めＡｌＮ基板２ａを酸化性雰囲気中で加熱処
理することにより、ＡｌＮ基板２ａの全表面に酸化物層
（Ａｌ2 Ｏ3 皮膜）３が形成される。Therefore, when a non-oxide ceramic substrate is used, it is necessary to form an oxide layer on the surface of the ceramic substrate in advance to enhance wettability to the substrate. FIG. 5 is a sectional view showing a configuration example of a ceramic circuit board 1b using an AlN substrate 2a as a ceramic substrate. In this case, before the joining operation of the metal circuit board 4a and the copper board 5a, the AlN substrate 2a is previously subjected to a heat treatment in an oxidizing atmosphere, so that an oxide layer (Al 2 O 3 film) 3 is formed on the entire surface of the AlN substrate 2a. Is formed.
【００１０】上記直接接合法により金属回路板をセラミ
ックス基板に接合したセラミックス回路基板によれば、
接合界面部にろう材や接着剤層が介在しないため、両部
材間の熱抵抗が小さく放熱姓に優れた回路基板が得られ
る。また、セラミックスと金属との間にＭｏ板等を介在
させないような単純構造であるため、小型高実装化が可
能であり、さらに作業工程も短縮できる等の長所を有し
ている。According to the ceramic circuit board in which the metal circuit board is joined to the ceramic substrate by the direct joining method,
Since no brazing material or adhesive layer is interposed at the joint interface, a circuit board having a small heat resistance between the two members and excellent heat dissipation can be obtained. In addition, since it has a simple structure in which a Mo plate or the like is not interposed between ceramics and metal, it has advantages in that it can be miniaturized and mounted, and the work process can be shortened.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、上記の
ように直接接合法によって形成した従来の各セラミック
ス回路基板においては、たとえ酸素を含有した金属回路
板を使用しても、または、表面酸化層を形成した金属回
路板を使用しても、製造されたほとんど全てのセラミッ
クス回路基板が十分な接合強度を有することは困難であ
り、より十分な接合強度と製品特性の安定化が求められ
ていた。However, in each of the conventional ceramic circuit boards formed by the direct bonding method as described above, even if a metal circuit board containing oxygen is used, or a surface oxide layer is formed, Even if the formed metal circuit board is used, it is difficult for almost all of the manufactured ceramic circuit boards to have a sufficient bonding strength, and a more sufficient bonding strength and stable product characteristics have been demanded.
【００１２】本発明は上記問題点を解決するためになさ
れたものであり、特に金属回路板あるいは金属板とセラ
ミックス基板との接合強度を高め回路基板全体としての
機械的強度を改善し、金属回路板の剥離や膨れなどの欠
陥の発生が少ない、品質が安定したセラミックス回路基
板を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and in particular, it has been proposed to improve the mechanical strength of a circuit board as a whole by increasing the bonding strength between a metal circuit board or a metal plate and a ceramic substrate. It is an object of the present invention to provide a ceramic circuit board having a stable quality, in which few defects such as peeling and swelling of a board are generated.
【００１３】[0013]
【課題を解決するための手段】本発明者らは上記目的を
達成するために、従来のセラミックス回路基板における
金属回路板の剥離や膨れの発生原因等について調査研究
を行なった。その結果、まず接合操作後に金属回路板の
ピール強度を測定する際に接合面を観察した結果、未接
合部が大きな面積割合で存在していることを発見した。
そして、このためにピール強度が低下していることを確
認した。また、さらに得られたセラミックス回路基板は
上記未接合部を起点として金属回路板の剥離や膨れが発
生し易いことも同時に確認した。さらに、金属回路板の
剥離や膨れの発生原因としては、金属回路板などの直接
接合時に加熱操作によって生成する共晶液相の生成量が
少ないこと、および共晶液相とセラミックス基板との濡
れ性が悪いことが大きな原因であると推定した。Means for Solving the Problems In order to achieve the above object, the present inventors conducted research on the cause of peeling and swelling of a metal circuit board in a conventional ceramic circuit board. As a result, the joint surface was observed when the peel strength of the metal circuit board was measured after the joining operation. As a result, it was found that the unjoined portion was present in a large area ratio.
Then, it was confirmed that the peel strength was reduced. It was also confirmed at the same time that the obtained ceramic circuit board was prone to peeling and swelling of the metal circuit board starting from the unbonded portion. Furthermore, the cause of peeling or swelling of the metal circuit board is that the amount of eutectic liquid phase generated by the heating operation during direct bonding of the metal circuit board or the like is small, and that the eutectic liquid phase and the ceramic substrate get wet. It was presumed that poor sex was the major cause.
【００１４】この原因を解消するために、本発明者らは
上記共晶液相の生成量を増大させ、セラミックス基板に
対する共晶液相の濡れ性を改善する方策等を種々検討し
た。その結果、酸素等の結合剤を所定量含有したタフピ
ッチ電解銅等の金属回路板であってもその表面に所定厚
さの酸化物層を形成したり、また、セラミックス基板を
形成する際に添加する焼結助剤の含有量を高める等の製
造条件をコントロールしたときに、セラミックス基板と
金属回路板との接合界面における未接合部の面積割合が
小さくなり、接合強度（ピール強度）が大幅に改善さ
れ、回路基板の耐久性が向上することが判明した。In order to eliminate this cause, the present inventors have studied various measures for increasing the amount of the eutectic liquid phase and improving the wettability of the eutectic liquid phase on the ceramic substrate. As a result, even if the metal circuit board is made of tough pitch electrolytic copper or the like containing a predetermined amount of a binder such as oxygen, an oxide layer having a predetermined thickness is formed on the surface of the metal circuit board or added when forming a ceramic substrate. When the production conditions, such as increasing the content of the sintering aid, are controlled, the area ratio of the unbonded portion at the bonding interface between the ceramic substrate and the metal circuit board is reduced, and the bonding strength (peel strength) is significantly increased. It has been found that the durability of the circuit board has been improved.
【００１５】また、セラミックス基板の表面が平滑であ
るよりも、ホーニング処理等を実施して最大高さ（Ｒma
x ）基準での表面粗さが５μｍ以上の範囲となるように
粗面化加工した場合の方が、基板と金属回路板との接合
強度が増加し、耐久性が優れた回路基板が得られること
も判明した。In addition, rather than the surface of the ceramic substrate being smooth, the maximum height (Rma
x) When the surface is roughened so that the standard surface roughness is in the range of 5 μm or more, the bonding strength between the substrate and the metal circuit board increases, and a circuit board having excellent durability can be obtained. It turned out that.
【００１６】本発明は上記知見に基づいて完成されたも
のである。すなわち本発明に係るセラミックス回路基板
は、焼結助剤が含有されたセラミックス基板に金属回路
板を直接接合してなるセラミックス回路基板において、
上記セラミックス基板と上記金属回路板との接合界面の
未接合部面積が接合界面面積の７．０％以下であること
を特徴とする。The present invention has been completed based on the above findings. That is, the ceramic circuit board according to the present invention is a ceramic circuit board obtained by directly joining a metal circuit board to a ceramic substrate containing a sintering aid,
The area of the unbonded portion at the bonded interface between the ceramic substrate and the metal circuit board is 7.0% or less of the bonded interface area.
【００１７】また、セラミックス基板が非酸化物系セラ
ミックスであり、この非酸化物系セラミックスの少なく
とも上記金属回路板との接合界面側の表面に、厚さが
０．１〜３μｍの酸化物層を有するように構成するとよ
い。Further, the ceramic substrate is a non-oxide ceramic, and an oxide layer having a thickness of 0.1 to 3 μm is formed on at least the surface of the non-oxide ceramic at the bonding interface side with the metal circuit board. It is good to be constituted to have.
【００１８】さらに、セラミックス基板の少なくとも上
記金属回路板との接合界面側の表面粗さ（Ｒmax ）が５
μｍ以上であることが好ましい。Further, the surface roughness (Rmax) of the ceramic substrate at least on the bonding interface side with the metal circuit board is 5%.
It is preferably at least μm.
【００１９】また、セラミックス基板が窒化アルミニウ
ム（ＡｌＮ）基板または窒化けい素（Ｓｉ3 Ｎ4 ）基板
であることを特徴とする。Further, the ceramic substrate is an aluminum nitride (AlN) substrate or a silicon nitride (Si 3 N 4 ) substrate.
【００２０】さらに、金属回路板をアルミニウム回路板
で構成してもよい。この場合、アルミニウム回路板が、
結合剤としてＳｉを含有していることが直接接合法によ
りセラミックス基板と接合するために好ましい。Further, the metal circuit board may be constituted by an aluminum circuit board. In this case, the aluminum circuit board
It is preferable that Si is contained as a binder in order to join the ceramic substrate by a direct joining method.
【００２１】ここで、金属回路板が銅回路板である場
合、直接接合法における結合剤は酸素であるので、この
銅回路板はＣｕ−Ｏ共晶化合物によりセラミックス基板
に接合されることになる。さらに金属回路板がアルミニ
ウム回路板である場合、直接接合法における結合剤はけ
い素（Ｓｉ）が好ましいので、この場合、アルミニウム
回路板はＡｌ−Ｓｉ共晶化合物によりセラミックス基板
と接合されることとなる。このようなアルミニウム回路
板の結合材成分としてのけい素（Ｓｉ）を１００〜３０
００ｐｐｍ含有することが好ましい。Here, when the metal circuit board is a copper circuit board, the bonding agent in the direct bonding method is oxygen, so that the copper circuit board is bonded to the ceramic substrate by a Cu-O eutectic compound. . Further, when the metal circuit board is an aluminum circuit board, the binder in the direct bonding method is preferably silicon (Si). In this case, the aluminum circuit board is bonded to the ceramics substrate by the Al-Si eutectic compound. Become. Silicon (Si) as a binder component of such an aluminum circuit board is 100 to 30%.
It is preferably contained at 00 ppm.
【００２２】本発明に係るセラミックス回路基板に使用
されるセラミックス基板としては、特に限定されるもの
ではなく、酸化アルミニウム（アルミナ：Ａｌ2 Ｏ3 ）
等の酸化物系セラミックス基板の他に、窒化アルミニウ
ム（ＡｌＮ），窒化けい素（Ｓｉ3 Ｎ4 ），窒化チタン
（ＴｉＮ）等の窒化物、炭化けい素（ＳｉＣ），炭化チ
タン（ＴｉＣ）等の炭化物、またはほう化ランタン等の
ほう化物等の非酸化物系セラミックス基板でもよい。こ
れらのセラミックス基板には酸化イットリウムなどの焼
結助剤等が含有されていてもよい。The ceramic substrate used for the ceramic circuit substrate according to the present invention is not particularly limited, and aluminum oxide (alumina: Al 2 O 3 )
In addition to oxide-based ceramic substrates such as aluminum nitride (AlN), nitrides such as silicon nitride (Si 3 N 4 ) and titanium nitride (TiN), silicon carbide (SiC), titanium carbide (TiC), etc. Or a non-oxide ceramic substrate such as a boride such as lanthanum boride. These ceramic substrates may contain a sintering aid such as yttrium oxide.
【００２３】また上記金属回路板を構成する金属として
は、銅，アルミニウム，鉄，ニッケル，クロム，銀，モ
リブデン，コバルトの単体またはその合金など、基板成
分との共晶化合物を生成し、直接接合法を適用できる金
属であれば特に限定されないが、特に導電性および価格
の観点から銅，アルミニウムまたはその合金が好まし
い。As the metal constituting the metal circuit board, a eutectic compound with a substrate component such as a simple substance of copper, aluminum, iron, nickel, chromium, silver, molybdenum, and cobalt or an alloy thereof is formed, and is directly contacted. The metal is not particularly limited as long as it is a metal to which a legal method can be applied, but copper, aluminum or an alloy thereof is particularly preferable from the viewpoints of conductivity and cost.
【００２４】金属回路板の厚さは、通電容量等を勘案し
て決定されるが、セラミックス基板の厚さを０．２５〜
１．２mmの範囲とする一方、金属回路板の厚さを０．１
〜０．５mmの範囲に設定して両者を組み合せると熱膨張
差による変形などの影響を受けにくくなる。The thickness of the metal circuit board is determined in consideration of the current carrying capacity and the like.
While the thickness of the metal circuit board is set to 0.1 mm,
If they are set in the range of about 0.5 mm and they are combined, the influence of deformation due to a difference in thermal expansion becomes less likely.
【００２５】特に金属回路板として銅回路板を使用する
場合には、酸素を１００〜１０００ｐｐｍ含有するタフ
ピッチ電解銅から成る銅回路板を使用し、さらに後述す
るように銅回路板表面に所定厚さの酸化銅層を予め形成
することにより、直接接合時に、発生するＣｕ−Ｏ共晶
の量を増加させ、基板と銅回路板との接合強度を、より
向上させることができる。In particular, when a copper circuit board is used as a metal circuit board, a copper circuit board made of tough pitch electrolytic copper containing 100 to 1000 ppm of oxygen is used. By forming the copper oxide layer in advance, the amount of Cu—O eutectic generated at the time of direct bonding can be increased, and the bonding strength between the substrate and the copper circuit board can be further improved.
【００２６】上記酸化銅層などの酸化物層は、例えば金
属回路板を大気中において温度１５０〜３６０℃の範囲
にて２０〜１２０秒間加熱する表面酸化処理を実施する
ことによって形成される。ここで、酸化銅層の厚さが
０．５μｍ未満の場合は、Ｃｕ−Ｏ共晶の発生量が少な
くなるため、基板と銅回路板との未接合部分が多く、接
合強度を向上させる効果は少ない。一方、酸化銅層の厚
さが１０μｍを超えるように過大にしても、接合強度の
改善効果が少なく、却って銅回路板の導電特性を阻害す
ることになる。したがって、銅回路板表面に形成する酸
化銅層の厚さは０．５〜１０μｍの範囲が好ましい。そ
して同様の理由により２〜５μｍの範囲がより望まし
い。The oxide layer such as the copper oxide layer is formed by, for example, performing a surface oxidation treatment in which the metal circuit board is heated in the atmosphere at a temperature of 150 to 360 ° C. for 20 to 120 seconds. Here, when the thickness of the copper oxide layer is less than 0.5 μm, the amount of generation of Cu—O eutectic is reduced, so that there are many unjoined portions between the substrate and the copper circuit board, and the effect of improving the joining strength is obtained. Is less. On the other hand, if the thickness of the copper oxide layer is too large to exceed 10 μm, the effect of improving the bonding strength is small and the conductive properties of the copper circuit board are rather hindered. Therefore, the thickness of the copper oxide layer formed on the surface of the copper circuit board is preferably in the range of 0.5 to 10 μm. And for the same reason, the range of 2 to 5 μm is more desirable.
【００２７】また、セラミックス基板の表面が平滑であ
る場合よりも、粗面である方が接合強度が高くなる傾向
がある。なお、上記酸化処理において、加熱温度を高め
たり、処理時間を長くすることにより、セラミックス基
板の表面粗さを増加させることができる。上記表面酸化
処理後におけるセラミックス基板の表面粗さは、最大高
さ基準の表面粗さ（Ｒmax ）で５μｍ以上の範囲にする
とよい。さらに必要に応じてセラミックス基板表面をホ
ーニング処理することによって、その表面粗さを調整し
てもよい。[0027] A rough surface of the ceramic substrate tends to have a higher bonding strength than a smooth surface. In the oxidation treatment, the surface roughness of the ceramic substrate can be increased by increasing the heating temperature or lengthening the treatment time. The surface roughness of the ceramic substrate after the above-described surface oxidation treatment is preferably in a range of 5 μm or more in terms of the maximum height-based surface roughness (Rmax). Further, if necessary, the surface roughness of the ceramic substrate may be adjusted by performing a honing treatment.
【００２８】なお、直接接合法はＡｌ2 Ｏ3 などの酸化
物系セラミックス基板のみについては直ちに適用可能で
あり、窒化アルミニウムや窒化けい素などの非酸化物系
セラミックス基板にそのまま適用しても基板に対する濡
れ性が低いため、金属回路板の充分な接合強度が得られ
ない。The direct bonding method can be immediately applied only to an oxide ceramic substrate such as Al 2 O 3 , and can be directly applied to a non-oxide ceramic substrate such as aluminum nitride or silicon nitride. Owing to low wettability to the metal circuit board, sufficient bonding strength of the metal circuit board cannot be obtained.
【００２９】そこでセラミックス基板として非酸化物系
セラミックスを使用する場合には、その非酸化物系セラ
ミックス基板の表面に予め酸化物層を形成し、基板に対
する濡れ性を高める必要がある。この酸化物層は上記非
酸化物系セラミックス基板を、空気中などの酸化雰囲気
中で温度１０００〜１４００℃程度で２〜１５時間加熱
して形成される。この酸化物層の厚さが０．１μｍ未満
の場合には、上記濡れ性の改善効果が少ない一方、３μ
ｍを超えるように厚く形成しても改善効果が飽和するた
め、酸化物層の厚さは０．１〜３μｍの範囲が望まし
い。Therefore, when a non-oxide ceramic is used as the ceramic substrate, it is necessary to form an oxide layer on the surface of the non-oxide ceramic substrate in advance to enhance the wettability to the substrate. The oxide layer is formed by heating the non-oxide ceramic substrate in an oxidizing atmosphere such as air at a temperature of about 1000 to 1400 ° C. for 2 to 15 hours. When the thickness of the oxide layer is less than 0.1 μm, the effect of improving the wettability is small, while the thickness is 3 μm.
Since the improvement effect is saturated even if the oxide layer is formed thicker than m, the thickness of the oxide layer is preferably in the range of 0.1 to 3 μm.
【００３０】本発明で使用するセラミックス基板は、基
板原料となるセラミックス原料粉末に対して焼結助剤と
して添加するＹ2 Ｏ3 およびＡｌ2 Ｏ3 の添加量，焼結
温度や焼結時間を適正に制御することにより製造でき
る。例えば、セラミックス基板としてＡｌＮ基板の場合
は、ＡｌＮ原料粉末に対して１〜１０重量％のＹ2 Ｏ3
と０．１〜５重量％のＡｌ2 Ｏ3 とを添加し、得られた
原料混合体の成形体表面に窒化ほう素（ＢＮ）などから
成る敷粉を配置した状態で、非酸化性雰囲気中で温度１
７５０〜１９５０℃で２〜１０時間焼結して得られる。The ceramic substrate used in the present invention is prepared by adding the amounts of Y 2 O 3 and Al 2 O 3 added as sintering aids to the ceramic raw material powder as the substrate raw material, the sintering temperature and the sintering time. It can be manufactured by proper control. For example, in the case of an AlN substrate as the ceramic substrate, 1 to 10% by weight of Y 2 O 3 based on the AlN raw material powder is used.
And 0.1 to 5% by weight of Al 2 O 3, and a non-oxidizing atmosphere is placed in a state in which a powdered material such as boron nitride (BN) is placed on the surface of the compact of the obtained raw material mixture. Inside temperature 1
It is obtained by sintering at 750 to 1950 ° C. for 2 to 10 hours.
【００３１】特にＡｌＮ成形体表面にＢＮなどの敷粉を
配置することにより、生成したＹＡＧ，ＹＡＬ，ＹＡＭ
などの液相成分が成形体表面部から揮散することが防止
でき、ＡｌＮ基板表面部に液相成分となる化合物が所定
量だけ分布したＡｌＮ基板が得られる。上記液相成分は
金属回路板との接合強度を高める効果があり、これらの
液相成分の揮散を防止することにより、耐久性に優れた
回路基板が形成できる。上記化合物の分布割合は、Ａｌ
Ｎ基板の接合表面部の断面領域をＸ線マイクロアナライ
ザ（ＥＰＭＡ）による面分析し、特にイットリウム
（Ｙ）の集合部の面積割合を定量することにより容易に
測定できる。In particular, YAG, YAL, YAM produced by placing litter such as BN on the surface of the AlN compact
Such a liquid phase component can be prevented from volatilizing from the surface of the molded body, and an AlN substrate in which a predetermined amount of a compound to be a liquid phase component is distributed on the surface of the AlN substrate can be obtained. The liquid phase component has an effect of increasing the bonding strength with the metal circuit board. By preventing the volatilization of these liquid phase components, a circuit board having excellent durability can be formed. The distribution ratio of the compound is Al
The cross-sectional area of the bonding surface of the N substrate can be easily measured by performing a surface analysis using an X-ray microanalyzer (EPMA), and in particular, by quantifying the area ratio of the yttrium (Y) gathering portion.
【００３２】本発明に係るセラミックス回路基板は、上
記のように製造したセラミックス基板の表面に、前記金
属回路板を直接接合して製造される。The ceramic circuit board according to the present invention is manufactured by directly bonding the metal circuit board to the surface of the ceramic substrate manufactured as described above.
【００３３】ここで上記金属回路板は、ろう材などの接
合剤を使用せずにセラミックス基板表面に直接的に一体
に接合される。すなわち、金属回路板の成分と基板成分
との共晶化合物（共晶融体）を加熱により発生せしめ、
この共晶化合物を介して両部材を接合する、いわゆる直
接接合法を使用して接合される。Here, the metal circuit board is directly and integrally bonded to the surface of the ceramic substrate without using a bonding agent such as a brazing material. That is, a eutectic compound (eutectic melt) of the components of the metal circuit board and the substrate component is generated by heating,
The two members are joined via the eutectic compound using a so-called direct joining method.
【００３４】そして、セラミックス基板が非酸化物系セ
ラミックスから成り、また金属回路板が銅回路板である
場合には、典型的には以下のように接合操作が実施され
る。すなわち酸化物層を形成したセラミックス基板の表
面の所定位置に、表面酸化層としての酸化銅層を形成し
たタフピッチ電解銅製の銅回路板を接触配置して基板方
向に押圧した状態で、銅の融点（１０８３℃）未満で銅
−酸化銅の共晶温度（１０６５℃）以上に加熱し、生成
したＣｕ−Ｏ共晶化合物液相（共晶融体）を介して銅回
路板がセラミックス基板表面に直接的に接合される。こ
の直接接合法は、いわゆる銅直接接合法（Direct Bondi
ng Copper 法）である。When the ceramic substrate is made of a non-oxide ceramic and the metal circuit board is a copper circuit board, the joining operation is typically performed as follows. That is, a copper circuit board made of tough pitch electrolytic copper having a copper oxide layer as a surface oxide layer is placed in contact with a predetermined position on the surface of the ceramic substrate on which the oxide layer has been formed, and pressed against the substrate. The copper circuit board is heated to a temperature higher than the eutectic temperature of copper-copper oxide (1065 ° C.) at a temperature lower than (1083 ° C.), and the copper circuit board is formed on the surface of the ceramic substrate via the generated Cu—O eutectic compound liquid phase (eutectic melt) Directly joined. This direct bonding method is a so-called copper direct bonding method.
ng Copper method).
【００３５】一方、金属回路板がアルミニウム回路板で
ある場合には、結合剤としてはＳｉが選択され、Ｓｉ成
分を含有したＡｌ回路板をセラミックス基板表面に押圧
した状態でアルミニウム−けい素の共晶温度以上に加熱
し、生成したＡｌ−Ｓｉ共晶化合物液相（共晶融体）を
介してＡｌ回路板がセラミックス基板表面に直接的に接
合され、本発明のセラミックス回路基板が製造される。On the other hand, when the metal circuit board is an aluminum circuit board, Si is selected as a binder, and aluminum-silicon is mixed while an Al circuit board containing a Si component is pressed against the ceramic substrate surface. The Al circuit board is directly bonded to the surface of the ceramic substrate via the Al-Si eutectic compound liquid phase (eutectic melt) generated by heating to the crystallization temperature or higher, and the ceramic circuit board of the present invention is manufactured. .
【００３６】このように直接接合法を使用して金属回路
板をセラミックス基板表面に直接接合して形成した本発
明に係るセラミックス回路基板によれば、金属回路板と
セラミックス基板との間に、接着剤やろう材のような介
在物が存在しないため、両者間の熱抵抗が小さく、金属
回路板上に設けられた半導体素子の発熱を系外に迅速に
放散させることが可能である。According to the ceramic circuit board of the present invention formed by directly bonding the metal circuit board to the surface of the ceramic substrate by using the direct bonding method, the bonding between the metal circuit board and the ceramic substrate is performed. Since there is no inclusion such as an agent or a brazing material, the thermal resistance between the two is small, and heat generated by the semiconductor element provided on the metal circuit board can be quickly radiated out of the system.
【００３７】本発明に係るセラミックス回路基板によれ
ば、金属回路板に所定量の酸素が含有されており、また
金属回路板表面に表面酸化層が形成されているため、直
接接合時に必要な共晶融体の生成量を大幅に増加させる
ことができ、またセラミックス基板に対する共晶融体の
濡れ性を大幅に高めることができる。このようにして製
造されたセラミックス回路基板は、セラミックス基板と
金属回路板との未接合部の面積率が７．０％以下であ
り、両部材の接合強度を大幅に高めることができる。ま
た未接合部に起因する金属回路板の剥離や膨れが効果的
に防止でき、この回路基板を用いた半導体装置を高い製
造歩留りで量産することが可能になる。According to the ceramic circuit board of the present invention, the metal circuit board contains a predetermined amount of oxygen, and the surface oxide layer is formed on the surface of the metal circuit board. The production amount of the eutectic melt can be greatly increased, and the wettability of the eutectic melt to the ceramic substrate can be greatly increased. In the ceramic circuit board manufactured in this manner, the area ratio of the unjoined portion between the ceramic board and the metal circuit board is 7.0% or less, and the joining strength of both members can be greatly increased. Further, peeling and swelling of the metal circuit board due to the unjoined portion can be effectively prevented, and it becomes possible to mass-produce a semiconductor device using this circuit board with a high production yield.
【００３８】このような本発明のセラミックス回路基板
は、金属回路板の接合強度が高いため、熱サイクルによ
って回路層が剥離したり、基板に割れが発生することが
少なく、耐熱サイクル特性が著しく向上し、耐久性およ
び信頼性に優れた半導体装置を提供することができる。In the ceramic circuit board of the present invention, since the bonding strength of the metal circuit board is high, the circuit layer is less likely to be peeled off or cracked in the substrate due to a heat cycle, and the heat cycle characteristics are significantly improved. In addition, a semiconductor device having excellent durability and reliability can be provided.
【００３９】[0039]
【発明の実施の形態】次に本発明の実施形態について以
下に示す実施例を参照して具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be specifically described with reference to the following examples.
【００４０】実施例１〜５ セラミックス基板として、表面粗さ（Ｒmax ）が５μｍ
であり、また熱伝導率が７８Ｗ／ｍ・Ｋであり、縦５５
mm×横３７mm×厚さ０．８mmの窒化アルミニウム（Ａｌ
Ｎ）基板を多数用意し、各ＡｌＮ基板を空気雰囲気の加
熱炉中で１３００℃で１２時間加熱することにより、基
板全表面を酸化し厚さ２μｍの酸化物層（Ａｌ2 Ｏ3 皮
膜）を形成した。 Examples 1 to 5 A ceramic substrate having a surface roughness (Rmax) of 5 μm
And a thermal conductivity of 78 W / m · K.
mm × 37 mm × 0.8 mm thick aluminum nitride (Al
N) A number of substrates were prepared, and each AlN substrate was heated in a heating furnace in an air atmosphere at 1300 ° C. for 12 hours to oxidize the entire surface of the substrate to form an oxide layer (Al 2 O 3 film) having a thickness of 2 μm. Formed.
【００４１】一方、酸素を４０５〜７４４ｐｐｍ含有
し、厚さ０．３mmおよび０．２５mmのタフピッチ電解銅
から成る銅回路板および銅板を多数用意し、各銅回路板
および銅板を大気に接するホットプレート上に載置した
状態でそれぞれ加熱して表面酸化処理を行ない、表１お
よび図１に示すような厚さを有する表面酸化層（酸化銅
層）７を一体に形成した。On the other hand, a large number of copper circuit boards and copper plates made of tough pitch electrolytic copper having a thickness of 0.3 mm and 0.25 mm containing oxygen at 405 to 744 ppm are prepared, and each of the copper circuit plates and the copper plate is brought into contact with the atmosphere by a hot plate. A surface oxidation treatment was performed by heating each of the substrates placed on the surface, and a surface oxide layer (copper oxide layer) 7 having a thickness as shown in Table 1 and FIG. 1 was integrally formed.
【００４２】次に酸化物層を形成した各ＡｌＮ基板表面
側に、厚さ０．３mmのタフピッチ電解銅から成る銅回路
板を接触配置する一方、背面側に厚さ０．２５mmのタフ
ピッチ銅から成る銅板を裏当て材として接触配置させて
積層体とし、この積層体を窒素ガス雰囲気に調整した温
度１０７５℃に設定した加熱炉に挿入して１分間加熱す
ることにより、各ＡｌＮ基板に銅回路板および銅板を直
接接合した実施例１〜５に係るセラミックス回路基板を
それぞれ製造した。Next, a copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm is placed in contact with the surface of each AlN substrate on which the oxide layer is formed, while a copper circuit board made of tough pitch copper having a thickness of 0.25 mm is formed on the back side. The resulting copper plate is contacted and placed as a backing material to form a laminate, and the laminate is inserted into a heating furnace set at a temperature of 1075 ° C. adjusted to a nitrogen gas atmosphere and heated for 1 minute, thereby forming a copper circuit on each AlN substrate. The ceramic circuit boards according to Examples 1 to 5 in which the plate and the copper plate were directly bonded were manufactured.
【００４３】各セラミックス回路基板１ｃは、図１に示
すようにＡｌＮ基板２ａの全表面に酸化物層３が形成さ
れており、ＡｌＮ基板２ａの表面側に金属回路板として
の銅回路板４ａが直接接合される一方、背面側に裏銅板
としての銅板５ａが同様に直接接合され、さらに表面側
の銅回路板４ａの所定位置に図示しない半田層を介して
半導体素子６が一体に接合された構造を有する。金属回
路板４ａおよび銅板５ａの少なくともＡｌＮ基板２ａと
の接合面側には所定厚さの表面酸化層（酸化銅層）７が
形成されている。なおＡｌＮ基板２ａに銅回路板４ａお
よび銅板５ａを接合した場合、裏銅板としての銅板５ａ
は放熱促進および反り防止に寄与する。As shown in FIG. 1, each ceramic circuit board 1c has an oxide layer 3 formed on the entire surface of an AlN substrate 2a, and a copper circuit board 4a as a metal circuit board is provided on the surface side of the AlN substrate 2a. While being directly joined, a copper plate 5a as a back copper plate was similarly directly joined to the back side, and further, the semiconductor element 6 was integrally joined to a predetermined position of the front side copper circuit board 4a via a solder layer (not shown). Having a structure. A surface oxide layer (copper oxide layer) 7 having a predetermined thickness is formed on at least a bonding surface side of the metal circuit board 4a and the copper plate 5a with the AlN substrate 2a. When the copper circuit board 4a and the copper board 5a are joined to the AlN substrate 2a, the copper board 5a as the back copper board is used.
Contributes to promoting heat radiation and preventing warpage.
【００４４】比較例１ 一方、各銅回路板および銅板について表面酸化処理を実
施せず、表面酸化層（酸化銅層）を形成しない銅回路板
および銅板を使用した点以外は実施例１と同一条件で直
接接合処理することにより、比較例１に係るセラミック
ス回路基板を調製した。 Comparative Example 1 On the other hand, the same as in Example 1 except that the surface oxidation treatment was not performed on each of the copper circuit boards and the copper sheets, and a copper circuit board and a copper sheet without forming a surface oxide layer (copper oxide layer) were used. The ceramic circuit board according to Comparative Example 1 was prepared by performing direct bonding under the conditions.
【００４５】実施例６〜１０ セラミックス基板として、表面粗さ（Ｒmax ）が７μｍ
であり、また熱伝導率が１７７Ｗ／ｍ・Ｋであり、縦５
０mm×横２５mm×厚さ０．６３５mmの窒化アルミニウム
（ＡｌＮ）基板を多数用意し、各ＡｌＮ基板を空気雰囲
気の加熱炉中で１３００℃で１２時間加熱することによ
り、基板全表面を酸化し厚さ２μｍの酸化物層（Ａｌ2
Ｏ3 皮膜）を形成した。 Examples 6 to 10 As a ceramic substrate, the surface roughness (Rmax) was 7 μm.
And a thermal conductivity of 177 W / m · K.
A large number of aluminum nitride (AlN) substrates of 0 mm × 25 mm × 0.635 mm in thickness are prepared, and each AlN substrate is heated at 1300 ° C. for 12 hours in a heating furnace in an air atmosphere, so that the entire surface of the substrate is oxidized and thickened. Oxide layer (Al 2
O 3 film) was formed.
【００４６】一方、酸素を４０５〜７４４ｐｐｍ含有
し、厚さ０．３mmおよび０．２５mmのタフピッチ電解銅
から成る銅回路板および銅板を多数用意し、各銅回路板
および銅板を大気に接するホットプレート上に載置した
状態でそれぞれ加熱して表面酸化処理を行ない、表１に
示すような厚さを有する表面酸化層（酸化銅層）を一体
に形成した。On the other hand, a large number of copper circuit boards and copper plates made of tough pitch electrolytic copper having a thickness of 0.3 mm and 0.25 mm containing oxygen at 405 to 744 ppm are prepared, and each of the copper circuit plates and the copper plates is brought into contact with the atmosphere by a hot plate. A surface oxidation treatment was performed by heating each of the devices placed on the surface, and a surface oxide layer (copper oxide layer) having a thickness as shown in Table 1 was integrally formed.
【００４７】次に酸化物層を形成した各ＡｌＮ基板表面
側に、厚さ０．３mmのタフピッチ電解銅から成る銅回路
板を接触配置する一方、背面側に厚さ０．２５mmのタフ
ピッチ銅から成る銅板を裏当て材として接触配置させて
積層体とし、この積層体を窒素ガス雰囲気に調整した温
度１０７５℃に設定した加熱炉に挿入して１分間加熱す
ることにより、各ＡｌＮ基板に銅回路板および銅板を直
接接合して、図１に示すような実施例６〜１０に係るセ
ラミックス回路基板をそれぞれ製造した。Next, a copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm is disposed in contact with the surface of each AlN substrate on which the oxide layer is formed, while a copper circuit board made of tough pitch copper having a thickness of 0.25 mm is provided on the back side. The resulting copper plate is placed in contact with a backing material to form a laminate, and the laminate is inserted into a heating furnace set at a temperature of 1075 ° C. adjusted to a nitrogen gas atmosphere and heated for 1 minute, thereby forming a copper circuit on each AlN substrate. The plate and the copper plate were directly joined to produce ceramic circuit boards according to Examples 6 to 10 as shown in FIG.
【００４８】比較例２ 一方、各銅回路板および銅板について表面酸化処理を実
施せず、表面酸化層（酸化銅層）を形成しない銅回路板
および銅板を使用した点以外は実施例６と同一条件で直
接接合処理することにより、比較例２に係るセラミック
ス回路基板を調製した。 Comparative Example 2 On the other hand, the same as Example 6 except that the surface oxidation treatment was not performed on each copper circuit board and the copper plate, and a copper circuit board and a copper plate not forming a surface oxide layer (copper oxide layer) were used. A ceramic circuit board according to Comparative Example 2 was prepared by performing direct bonding under the conditions.
【００４９】実施例１１ 実施例１において使用した、表面酸化層を形成した銅回
路板に代えて、Ｓｉ成分を含有したＳｉ含有アルミニウ
ム回路板を使用した点以外は実施例１と同一条件で処理
することにより、実施例１１に係るセラミックス回路基
板を調製した。 Example 11 A treatment was performed under the same conditions as in Example 1 except that an Si-containing aluminum circuit board containing a Si component was used instead of the copper circuit board having a surface oxide layer used in Example 1. Thus, a ceramic circuit board according to Example 11 was prepared.
【００５０】実施例１２ 実施例６において使用した、表面酸化層を形成した銅回
路板に代えて、Ｓｉ成分を含有したＳｉ含有アルミニウ
ム回路板を使用した点以外は実施例６と同一条件で処理
することにより、実施例１２に係るセラミックス回路基
板を調製した。 Example 12 A treatment was carried out under the same conditions as in Example 6 except that a Si-containing aluminum circuit board containing a Si component was used instead of the copper circuit board having a surface oxide layer used in Example 6. Thus, a ceramic circuit board according to Example 12 was prepared.
【００５１】上記のように調製した各実施例および比較
例に係る各回路基板について、表面酸化処理後における
銅回路板の酸素含有量を測定して、表１に示す結果を得
た。また各回路基板の強度特性を評価するために、各銅
回路板およびアルミニウム回路板のピール強度を測定す
るとともに、このピール強度測定後における銅回路板お
よびアルミニウム回路板の剥離面を写真撮影し、写真上
に白色部として残る未接合部の面積率を画像解析により
測定した。各測定結果を下記表１に示す。The oxygen content of the copper circuit board after the surface oxidation treatment was measured for the circuit boards according to the examples and the comparative examples prepared as described above, and the results shown in Table 1 were obtained. Also, in order to evaluate the strength characteristics of each circuit board, while measuring the peel strength of each copper circuit board and aluminum circuit board, and taking a photograph of the peeled surface of the copper circuit board and aluminum circuit board after this peel strength measurement, The area ratio of the unbonded portion remaining as a white portion on the photograph was measured by image analysis. Table 1 below shows the measurement results.
【００５２】[0052]
【表１】 [Table 1]
【００５３】上記表１に示す結果から明らかなように、
結合剤として所定量の酸素を含有する銅回路板であり、
かつ、その接合面に表面酸化層（酸化銅層）を一体に形
成した銅回路板をセラミックス基板表面に直接接合して
成る各実施例１〜１０に係るセラミックス回路基板によ
れば、上記酸化銅層を形成していない比較例１，２の回
路基板と比較して、銅回路板とセラミックス基板との未
接合部の面積率が７．０％以下と小さく、またピール強
度は１０〜２７％上昇することが確認できた。また、所
定量のＳｉを含有するアルミニウム回路板をＡｌＮ基板
表面に直接接合して成る実施例１１〜１２に係るセラミ
ックス回路基板においても、未接合部の面積率が小さ
く、ピール強度も大幅に増加することが判明した。As is clear from the results shown in Table 1 above,
A copper circuit board containing a predetermined amount of oxygen as a binder,
In addition, according to the ceramic circuit boards according to Examples 1 to 10 in which a copper circuit board having a surface oxide layer (copper oxide layer) integrally formed on the bonding surface is directly bonded to the ceramic substrate surface, the copper oxide Compared with the circuit boards of Comparative Examples 1 and 2 where no layer is formed, the area ratio of the unbonded portion between the copper circuit board and the ceramic substrate is as small as 7.0% or less, and the peel strength is 10 to 27%. It was confirmed that it rose. Also, in the ceramic circuit boards according to Examples 11 to 12 in which an aluminum circuit board containing a predetermined amount of Si is directly bonded to the AlN substrate surface, the area ratio of the unbonded portion is small, and the peel strength is greatly increased. It turned out to be.
【００５４】実施例１３ 実施例１において使用したセラミックス基板であり、酸
化物層（Ａｌ2 Ｏ3 皮膜）を形成したＡｌＮ基板２ａに
代えて、アルミナ（Ａｌ2 Ｏ3 ）基板２を使用した点以
外は、実施例１と同様にして銅回路板をＡｌ2 Ｏ3 基板
２表面に直接接合することにより、図２に示すような実
施例１３に係るセラミックス回路基板１ｄを調製した。
なお、銅回路板としては実施例１〜５用に調製した各銅
回路板４ａおよび銅板５ａを使用した。各銅回路板４ａ
および銅板５ａの表面には所定厚さの酸化銅層７が形成
されている。 Example 13 The ceramic substrate used in Example 1 was replaced by an alumina (Al 2 O 3 ) substrate 2 instead of the AlN substrate 2a on which an oxide layer (Al 2 O 3 film) was formed. Except for this point, a copper circuit board was directly joined to the surface of the Al 2 O 3 substrate 2 in the same manner as in Example 1 to prepare a ceramic circuit board 1d according to Example 13 as shown in FIG.
The copper circuit boards used were the copper circuit boards 4a and 5a prepared for Examples 1 to 5. Each copper circuit board 4a
A copper oxide layer 7 having a predetermined thickness is formed on the surface of copper plate 5a.
【００５５】一方、比較例として上記酸化銅層を形成し
ていない銅回路板をＡｌ2 Ｏ3 基板に直接接合して比較
例のセラミックス回路基板を調製した。On the other hand, as a comparative example, a copper circuit board having no copper oxide layer was directly bonded to an Al 2 O 3 substrate to prepare a ceramic circuit board of the comparative example.
【００５６】上記酸化銅層７を形成した銅回路板４ａ，
５ａを使用した実施例１３に係るセラミックス回路基板
１ｄのピール強度は、酸化銅層を形成しない比較例のセ
ラミックス回路基板と比較して２２〜３１％増加してお
り、優れた接合強度を有していることが確認できた。The copper circuit board 4a on which the copper oxide layer 7 is formed,
The peel strength of the ceramic circuit board 1d according to Example 13 using 5a is increased by 22 to 31% as compared with the ceramic circuit board of the comparative example in which the copper oxide layer is not formed, and has excellent bonding strength. Was confirmed.
【００５７】[0057]
【発明の効果】以上説明の通り、本発明に係るセラミッ
クス回路基板によれば、直接接合時に必要な共晶融体の
生成量を増加させることができ、またセラミックス基板
に対する共晶融体の濡れ性を高めることができる。した
がって、セラミックス基板と金属回路板との未接合部が
減少し、両部材の接合強度を高めることができる。As described above, according to the ceramic circuit board of the present invention, the amount of eutectic melt required for direct bonding can be increased, and the eutectic melt wets the ceramic substrate. Can be enhanced. Therefore, the number of unjoined portions between the ceramic substrate and the metal circuit board is reduced, and the joining strength between the two members can be increased.
【図１】本発明に係るセラミックス回路基板の構成例を
示す断面図。FIG. 1 is a sectional view showing a configuration example of a ceramic circuit board according to the present invention.
【図２】本発明に係るセラミックス回路基板の他の構成
例を示す断面図。FIG. 2 is a sectional view showing another configuration example of the ceramic circuit board according to the present invention.
【図３】従来のセラミックス回路基板の構成例を示す断
面図。FIG. 3 is a cross-sectional view showing a configuration example of a conventional ceramic circuit board.
【図４】従来のセラミックス回路基板の他の構成例を示
す断面図。FIG. 4 is a cross-sectional view showing another example of the configuration of a conventional ceramic circuit board.
【図５】従来のセラミックス回路基板のその他の構成例
を示す断面図。FIG. 5 is a sectional view showing another example of the configuration of a conventional ceramic circuit board.
１，１ａ，１ｂ，１ｃ，１ｄ セラミックス回路基板
（Ａｌ2 Ｏ3 回路基板，ＡｌＮ回路基板） ２，２ａ，２ｂ セラミックス基板（Ａｌ2 Ｏ3 基板，
ＡｌＮ基板） ３ 酸化物層（Ａｌ2 Ｏ3 皮膜） ４，４ａ 金属回路板（Ｃｕ回路板） ５，５ａ 金属板（裏銅板） ６ 半導体素子（チップ） ７ 表面酸化層（酸化銅層）1, 1a, 1b, 1c, 1d Ceramic circuit board (Al 2 O 3 circuit board, AlN circuit board) 2, 2a, 2b Ceramic board (Al 2 O 3 substrate,
AlN substrate) 3 Oxide layer (Al 2 O 3 film) 4, 4a Metal circuit board (Cu circuit board) 5, 5a Metal plate (back copper plate) 6 Semiconductor element (chip) 7 Surface oxide layer (copper oxide layer)
フロントページの続き (72)発明者 水野谷 信幸 神奈川県横浜市鶴見区末広町二丁目４番地 株式会社東芝京浜事業所内Continuation of the front page (72) Inventor Nobuyuki Mizunoya 2-4-4 Suehirocho, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture Toshiba Keihin Works
Claims (8)
に金属回路板を直接接合してなるセラミックス回路基板
において、上記セラミックス基板と上記金属回路板との
接合界面の未接合部面積が接合界面面積の７．０％以下
であることを特徴とするセラミックス回路基板。In a ceramic circuit board obtained by directly bonding a metal circuit board to a ceramic substrate containing a sintering aid, the unbonded area of the bonding interface between the ceramic substrate and the metal circuit board is determined by the bonding interface. A ceramic circuit board having an area of 7.0% or less.
クスであり、この非酸化物系セラミックスの少なくとも
上記金属回路板との接合界面側の表面に、厚さが０．１
〜３μｍの酸化物層を有することを特徴とする請求項１
記載のセラミックス回路基板。2. The ceramic substrate is a non-oxide ceramic, and the thickness of the non-oxide ceramic is 0.1 μm on at least the surface on the bonding interface side with the metal circuit board.
2. The method according to claim 1, further comprising an oxide layer of about 3 .mu.m.
The ceramic circuit board as described.
回路板との接合界面側の表面粗さ（Ｒmax ）が５μｍ以
上であることを特徴とする請求項１記載のセラミックス
回路基板。3. The ceramic circuit board according to claim 1, wherein the surface roughness (Rmax) of the ceramic substrate at least on the bonding interface side with the metal circuit board is 5 μm or more.
（ＡｌＮ）基板であることを特徴とする請求項２記載の
セラミックス回路基板。4. The ceramic circuit board according to claim 2, wherein the ceramic substrate is an aluminum nitride (AlN) substrate.
Ｎ4 ）基板であることを特徴とする請求項２記載のセラ
ミックス回路基板。5. The method according to claim 1, wherein the ceramic substrate is made of silicon nitride (Si 3
3. The ceramic circuit board according to claim 2, wherein N 4 ) is a substrate.
とする請求項１記載のセラミックス回路基板。6. The ceramic circuit board according to claim 1, wherein the metal circuit board is a copper circuit board.
ことを特徴とする請求項１記載のセラミックス回路基
板。7. The ceramic circuit board according to claim 1, wherein the metal circuit board is an aluminum circuit board.
いることを特徴とする請求項７記載のセラミックス回路
基板。8. The ceramic circuit board according to claim 7, wherein the aluminum circuit board contains Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7249298A JPH11268968A (en) | 1998-03-20 | 1998-03-20 | Ceramic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7249298A JPH11268968A (en) | 1998-03-20 | 1998-03-20 | Ceramic circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11268968A true JPH11268968A (en) | 1999-10-05 |
Family
ID=13490885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7249298A Pending JPH11268968A (en) | 1998-03-20 | 1998-03-20 | Ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11268968A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101217A (en) * | 2001-09-26 | 2003-04-04 | Kyocera Corp | Circuit board and method of manufacturing the same |
| JP2003110239A (en) * | 2001-09-28 | 2003-04-11 | Hitachi Metals Ltd | Multilayer ceramic board and manufacturing method thereof |
| JP2012129548A (en) * | 2012-02-29 | 2012-07-05 | Mitsubishi Materials Corp | Substrate for power module and method for manufacturing the same |
| JP2015015275A (en) * | 2013-07-03 | 2015-01-22 | 三菱電機株式会社 | Ceramic circuit board, ceramic circuit board with heat sink, and manufacturing method of ceramic circuit board |
| JP2018006774A (en) * | 2017-10-03 | 2018-01-11 | 三菱電機株式会社 | Ceramic circuit board, ceramic circuit board with radiator, and method of manufacturing ceramic circuit board |
| US11246215B2 (en) | 2016-08-22 | 2022-02-08 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
-
1998
- 1998-03-20 JP JP7249298A patent/JPH11268968A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101217A (en) * | 2001-09-26 | 2003-04-04 | Kyocera Corp | Circuit board and method of manufacturing the same |
| JP2003110239A (en) * | 2001-09-28 | 2003-04-11 | Hitachi Metals Ltd | Multilayer ceramic board and manufacturing method thereof |
| JP2012129548A (en) * | 2012-02-29 | 2012-07-05 | Mitsubishi Materials Corp | Substrate for power module and method for manufacturing the same |
| JP2015015275A (en) * | 2013-07-03 | 2015-01-22 | 三菱電機株式会社 | Ceramic circuit board, ceramic circuit board with heat sink, and manufacturing method of ceramic circuit board |
| US11246215B2 (en) | 2016-08-22 | 2022-02-08 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
| US11553592B2 (en) | 2016-08-22 | 2023-01-10 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
| JP2018006774A (en) * | 2017-10-03 | 2018-01-11 | 三菱電機株式会社 | Ceramic circuit board, ceramic circuit board with radiator, and method of manufacturing ceramic circuit board |
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