JPH11274141A - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing methodInfo
- Publication number
- JPH11274141A JPH11274141A JP7257598A JP7257598A JPH11274141A JP H11274141 A JPH11274141 A JP H11274141A JP 7257598 A JP7257598 A JP 7257598A JP 7257598 A JP7257598 A JP 7257598A JP H11274141 A JPH11274141 A JP H11274141A
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- plasma
- plasma processing
- bias
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Abstract
(57)【要約】
【課題】静電吸着力によって試料を試料台に保持させる
静電吸着膜を備えた処理装置において、試料の処理終了
時における静電吸着の除電時間を短縮することのできる
プラズマ処理装置及びプラズマ処理方法を提供する。
【解決手段】処理室内に設けられ、試料が配置される電
極と、前記電極に前記試料を静電吸着力によって保持す
る静電吸着手段と、前記電極と前記試料の裏面間に伝熱
ガスを導入する伝熱ガス導入手段と、前記処理室内にプ
ラズマを生成するためのプラズマ生成用高周波電源と、
前記試料のエッチング時に前記電極に高周波バイアス電
圧を印加するバイアス用高周波電源を備えたプラズマ処
理装置において、前記バイアス用高周波電源からの高周
波バイアス電圧の印加により発生する自己バイアス電圧
によって、前記試料の吸着力の一部を確保するようにし
た。
(57) Abstract: In a processing apparatus provided with an electrostatic attraction film for holding a sample on a sample stage by an electrostatic attraction force, it is possible to reduce the static elimination time of electrostatic at the end of sample processing. A plasma processing apparatus and a plasma processing method are provided. An electrode provided in a processing chamber, on which a sample is disposed, electrostatic adsorption means for holding the sample on the electrode by an electrostatic adsorption force, and a heat transfer gas between the electrode and a back surface of the sample. A heat transfer gas introducing means to be introduced, a plasma generating high frequency power supply for generating plasma in the processing chamber,
In a plasma processing apparatus provided with a high-frequency bias power supply for applying a high-frequency bias voltage to the electrode when etching the sample, the sample is attracted by a self-bias voltage generated by application of a high-frequency bias voltage from the bias high-frequency power supply. Part of the power was secured.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は静電吸着手段を備え
たプラズマ処理装置およびそれを用いた処理方法に係
り、特に酸化膜等のイオン律速の処理を要する試料を処
理するのに適したプラズマ処理装置およびプラズマ処理
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus provided with an electrostatic attraction means and a processing method using the same, and more particularly to a plasma processing apparatus suitable for processing a sample such as an oxide film which requires ion-limited processing. The present invention relates to a processing apparatus and a plasma processing method.
【０００２】[0002]
【従来の技術】プラズマを用いて半導体のエッチング処
理や成膜処理等を行う技術分野において、被処理物（例
えば半導体ウェハ基板、以下試料と略する。）を配置す
る試料台に対して、プラズマ中のイオンを加速するため
の高周波電源と、静電吸着力によって試料を試料台に保
持させるための静電吸着膜及び直流電源を含む静電吸着
手段と、基板のプラズマ処理時における温度を良好な状
態に制御するための冷却ガス供給手段とを備えた処理装
置が採用されている。2. Description of the Related Art In the technical field of performing a semiconductor etching process, a film forming process, and the like using plasma, a plasma is applied to a sample stage on which an object to be processed (for example, a semiconductor wafer substrate, hereinafter abbreviated as a sample) is placed. High-frequency power supply for accelerating ions inside, electrostatic adsorption means including an electrostatic adsorption film and a DC power supply for holding the sample on the sample stage by electrostatic adsorption force, and good temperature during plasma processing of the substrate A processing apparatus provided with cooling gas supply means for controlling the temperature to a proper state is employed.
【０００３】例えば、特開昭６２−２８０３７８号公報
では、プラズマー電極間の電界強度を一定化するパルス
状のイオン制御バイアス波形を発生させ試料台に印加す
ることにより、試料に入射するイオンエネルギーの分布
幅を狭くでき、エッチングの加工寸法精度や被処理膜と
下地材とのエッチング速度比を数倍に上げることが可能
となることが記載されている。For example, in Japanese Patent Application Laid-Open No. Sho 62-280378, a pulse-like ion control bias waveform for stabilizing the electric field intensity between the plasma and the electrode is generated and applied to a sample table to thereby reduce the ion energy incident on the sample. It is described that the distribution width can be narrowed, and the processing dimensional accuracy of etching and the etching rate ratio between the film to be processed and the base material can be increased several times.
【０００４】また、ＵＳＰ５，３２０，９８２号明細書
に記載された装置は、マイクロ波でプラズマを発生さ
せ、静電吸着力によって試料を試料台に保持させると共
に試料の裏面と試料台との間に伝熱ガスを介在させて試
料の温度制御を行いながら、正弦波出力の高周波電源を
バイアス電源として、該電源を試料台に接続して試料に
入射するイオンエネルギーを制御するものである。In the apparatus described in US Pat. No. 5,320,982, a plasma is generated by microwaves, the sample is held on the sample table by electrostatic attraction, and a gap between the back surface of the sample and the sample table is generated. While controlling the temperature of the sample with a heat transfer gas interposed therebetween, a high-frequency power source having a sine wave output is used as a bias power source, and the power source is connected to a sample stage to control ion energy incident on the sample.
【０００５】このような、静電吸着力によって試料を試
料台に保持させる静電吸着手段を備えた処理装置におい
て、試料の処理終了時には直流電源をオフとし、試料に
生じている静電力を解除する除電が必要となる。例え
ば、特開昭６０−１１５２２６号公報には、静電吸着力
を小さくすることにより、処理終了後基板搬出に要する
時間を短縮することが記載されている。In such a processing apparatus having an electrostatic chucking means for holding a sample on a sample stage by an electrostatic chucking force, the DC power supply is turned off at the end of the sample processing, and the electrostatic force generated on the sample is released. Required static elimination. For example, Japanese Patent Application Laid-Open No. 60-115226 discloses that the time required for carrying out a substrate after processing is reduced by reducing the electrostatic attraction force.
【０００６】[0006]
【発明が解決しようとする課題】試料としてφ３００mm
以上の大口径のものが採用されるようになってきたが、
このような大口径の試料を試料台に安定して保持させ、
かつ、伝熱ガスを介在させて試料の均一な温度制御を行
うためには、大きな静電吸着力の確保が必要となり、静
電吸着手段の直流電源としてかなり大きな電力のものが
必要になる。そのため、高圧の直流電源が必要となる。
しかし、静電吸着手段の電圧を高くすると、プラズマ処
理後の除電にかなりの時間を必要とし、基板処理のスル
ープットを低下させることになる。Problems to be Solved by the Invention φ300 mm as a sample
The above large-diameter type has come to be adopted,
Such a large-diameter sample is stably held on the sample stage,
In addition, in order to perform uniform temperature control of the sample through the intermediation of the heat transfer gas, it is necessary to secure a large electrostatic attraction force, and a DC power source of the electrostatic attraction means needs to have a considerably large power. Therefore, a high-voltage DC power supply is required.
However, when the voltage of the electrostatic attraction means is increased, a considerable amount of time is required for static elimination after the plasma processing, and the throughput of the substrate processing is reduced.
【０００７】特に、酸化膜のように抵抗値が高い材料の
場合、電荷が逃げにくいため、除電時間が長くなる欠点
がある。Particularly, in the case of a material having a high resistance value, such as an oxide film, there is a drawback that the charge is difficult to escape and the charge elimination time is lengthened.
【０００８】本発明の目的は、静電吸着力によって試料
を試料台に保持させる静電吸着膜を備えた処理装置にお
いて、試料の処理終了時における静電吸着の除電時間を
短縮することのできるプラズマ処理装置及びプラズマ処
理方法を提供することにある。 本発明の他の目的は、
酸化膜等のイオン律速の処理を要する試料を処理する処
理装置において、試料の処理終了時における静電吸着の
除電時間を短縮することのできるプラズマ処理装置及び
プラズマ処理方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a processing apparatus having an electrostatic attraction film for holding a sample on a sample stage by an electrostatic attraction force, whereby the time required for static elimination at the end of processing of the sample can be reduced. An object of the present invention is to provide a plasma processing apparatus and a plasma processing method. Another object of the present invention is to
It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method for processing a sample that requires ion-limiting processing such as an oxide film, which can reduce the static elimination time for electrostatic adsorption at the end of the sample processing.
【０００９】[0009]
【課題を解決するための手段】本発明の特徴は、処理室
内に設けられ、試料が配置される電極と、前記電極に前
記試料を静電吸着力によって保持する静電吸着手段と、
前記電極と前記試料の裏面間に伝熱ガスを導入する伝熱
ガス導入手段と、前記処理室内にプラズマを生成するた
めのプラズマ生成用高周波電源と、前記試料のエッチン
グ時に前記電極に高周波バイアス電圧を印加するバイア
ス用高周波電源を備えたプラズマ処理装置において、前
記バイアス用高周波電源からの高周波バイアス電圧の印
加により発生する自己バイアス電圧によって、前記試料
の吸着力の一部を確保するようにしたことにある。The feature of the present invention is that an electrode provided in a processing chamber and on which a sample is disposed, an electrostatic suction means for holding the sample on the electrode by electrostatic suction force,
A heat transfer gas introducing means for introducing a heat transfer gas between the electrode and the back surface of the sample; a high frequency power supply for generating plasma for generating plasma in the processing chamber; and a high frequency bias voltage applied to the electrode during etching of the sample. In a plasma processing apparatus provided with a high-frequency bias power supply for applying a bias, a part of the adsorption force of the sample is secured by a self-bias voltage generated by application of a high-frequency bias voltage from the high-frequency bias power supply. It is in.
【００１０】本発明の他の特徴は、処理室内にプラズマ
を発生させ、前記処理室内に配置されイオン律速のプラ
ズマ処理となる試料に高周波バイアスを印加し、前記高
周波バイアスの印加により生じたセルフバイアスによっ
て前記試料を試料台に静電吸着させ、前記試料を前記プ
ラズマにより処理することにある。Another feature of the present invention is that a plasma is generated in a processing chamber, a high-frequency bias is applied to a sample placed in the processing chamber and subjected to ion-limited plasma processing, and a self-bias generated by the application of the high-frequency bias is applied. And causing the sample to be electrostatically adsorbed on a sample stage and treating the sample with the plasma.
【００１１】本発明の他の特徴は、処理室内にプラズマ
を発生させ、前記処理室内に配置されイオン律速のプラ
ズマ処理となる試料に高周波バイアスを印加し前記高周
波バイアスの印加により生じたセルフバイアスによって
前記試料を試料台に静電吸着させ、前記静電吸着した試
料の裏面に伝熱ガスを供給し前記試料を前記プラズマに
より処理することにある。Another feature of the present invention is that a plasma is generated in a processing chamber, a high-frequency bias is applied to a sample placed in the processing chamber and subjected to ion-limited plasma processing, and a self-bias generated by the application of the high-frequency bias is applied. The sample is electrostatically adsorbed on a sample stage, and a heat transfer gas is supplied to the back surface of the electrostatically adsorbed sample to process the sample with the plasma.
【００１２】本発明によれば、高周波バイアスの印加に
よって発生する自己バイアス電圧によって試料の吸着力
の一部を確保するため、静電吸着用の電圧を低くするこ
とができ、これにより除電時間を大幅に短縮することが
できる。According to the present invention, the voltage for electrostatic attraction can be reduced because a part of the attraction force of the sample is secured by the self-bias voltage generated by the application of the high-frequency bias, thereby reducing the static elimination time. It can be greatly reduced.
【００１３】[0013]
【発明の実施の形態】以下本発明の実施例を説明する。
まず図１に、本発明を、プラズマ発生とは独立にバイア
ス電圧を制御可能なプラズマエッチング装置へ適用した
第一の実施例を示す。Embodiments of the present invention will be described below.
First, FIG. 1 shows a first embodiment in which the present invention is applied to a plasma etching apparatus capable of controlling a bias voltage independently of plasma generation.
【００１４】図１において、真空容器としてのプラズマ
処理室１は、下部電極２と上部電極３とから成る一対の
対向する電極を備えている。下部電極２には試料１９が
載置される。両電極２、３の間隙は、φ３００ｍｍ以上
の大口径の試料を処理する時の試料面上の圧力差を１割
以下にするために、３０ｍｍ以上とするのが望ましい。
また、フッ素原子や分子やイオンを減じるために、上部
／下部電極表面上での反応を有効に活用する観点から、
１００mm以下、好ましくは６０mm以下とするのが望まし
い。In FIG. 1, a plasma processing chamber 1 as a vacuum vessel has a pair of opposed electrodes including a lower electrode 2 and an upper electrode 3. A sample 19 is placed on the lower electrode 2. The gap between the two electrodes 2 and 3 is desirably 30 mm or more in order to reduce the pressure difference on the sample surface to 10% or less when processing a sample having a large diameter of 300 mm or more.
Also, from the viewpoint of effectively utilizing the reaction on the upper / lower electrode surface to reduce fluorine atoms, molecules and ions,
It is desirably 100 mm or less, preferably 60 mm or less.
【００１５】上部電極３には、マッチングボックス９を
介して高周波エネルギーを供給し処理室１の処理ガスを
プラズマ化する、プラズマ生成用高周波電源８が接続さ
れている。２０はプラズマを示している。The upper electrode 3 is connected to a high-frequency power source 8 for generating plasma, which supplies high-frequency energy via a matching box 9 and converts the processing gas in the processing chamber 1 into plasma. Reference numeral 20 denotes plasma.
【００１６】また、上部電極３の上には、ガスを所望の
分布に拡散するガス拡散板を備えたガス導入室（図示
略）が設けられている。処理室１には、マスフローコン
トローラ１３から、バルブ１４、ガス導入室、上部電極
３に設けられた孔を介して、試料のエッチング等の処理
に必要なガスが供給される。プラズマ処理室１は真空ポ
ンプ１５、１６により真空排気され、処理室１内が試料
の処理圧力になるように調整される。On the upper electrode 3, a gas introduction chamber (not shown) provided with a gas diffusion plate for diffusing gas into a desired distribution is provided. The processing chamber 1 is supplied with a gas required for processing such as etching of a sample from the mass flow controller 13 through a valve 14, a gas introduction chamber, and a hole provided in the upper electrode 3. The plasma processing chamber 1 is evacuated by vacuum pumps 15 and 16, and the inside of the processing chamber 1 is adjusted to a processing pressure of the sample.
【００１７】プラズマ処理室１の周囲には、プラズマ処
理室内に磁場を形成する磁場形成手段としての電磁コイ
ル４、５及びそれらの電源６、７が配置されている。Around the plasma processing chamber 1, there are arranged electromagnetic coils 4 and 5 as magnetic field forming means for forming a magnetic field in the plasma processing chamber, and power sources 6 and 7 thereof.
【００１８】上部電極３の構成材料としては、非磁性材
導電体、例えばアルミニウムやアルミニウム合金があ
る。処理室１の構成材料としては、非磁性材、例えばア
ルミニウムやアルミニウム合金、アルミナ、石英、Ｓｉ
Ｃ等がある。The constituent material of the upper electrode 3 is a nonmagnetic conductive material, for example, aluminum or aluminum alloy. As a constituent material of the processing chamber 1, a non-magnetic material, for example, aluminum, an aluminum alloy, alumina, quartz, Si
C and the like.
【００１９】試料１９を載置し保持する下部電極２の上
表面には、静電吸着用誘電体層（以下、静電吸着膜と略
称する）２１が設けられている。下部電極２には、高周
波成分カット用のコイル１１を介して数１００Ｖの直流
電圧（以下ＥＳＣ電圧）の直流電源１２のプラス側が接
続されている。これにより、静電吸着膜２１を介して試
料１９と下部電極間に作用するクーロン力により、試料
１９が下部電極２上に吸着、保持される。静電吸着膜２
１としては、例えば、酸化アルミニウム、酸化アルミニ
ウムにチタン酸化物を混合したものなどの誘電体を使用
することができる。なお、静電吸着手段の電極としては
単極式の他、２極式でもよい。On the upper surface of the lower electrode 2 on which the sample 19 is placed and held, a dielectric layer for electrostatic attraction (hereinafter abbreviated as an electrostatic attraction film) 21 is provided. The lower electrode 2 is connected to the positive side of a DC power supply 12 of a DC voltage of several hundred volts (hereinafter, ESC voltage) via a coil 11 for cutting high frequency components. Thereby, the sample 19 is adsorbed and held on the lower electrode 2 by the Coulomb force acting between the sample 19 and the lower electrode via the electrostatic adsorption film 21. Electrostatic adsorption film 2
As 1, for example, a dielectric such as aluminum oxide or a mixture of aluminum oxide and titanium oxide can be used. The electrodes of the electrostatic attraction means may be of a bipolar type in addition to a monopolar type.
【００２０】また、下部電極２には、４００ＫＨｚ−４
ＭＨｚの周波数のバイアス高周波電源１０が、ＤＣ成分
をカットするブロッキングコンデンサを介して接続され
ている。The lower electrode 2 has a frequency of 400 KHz-4.
A bias high frequency power supply 10 having a frequency of MHz is connected via a blocking capacitor for cutting a DC component.
【００２１】本発明では、この高周波バイアスの印加に
よって発生する自己バイアス電圧によって、試料の吸着
力の一部を確保するようにしている。According to the present invention, the self-bias voltage generated by the application of the high-frequency bias secures a part of the sample attraction force.
【００２２】さらに、下部電極２に吸着保持された基板
１９のプラズマ処理時における温度を良好な状態に制御
するための冷却ガス（Ｈｅ）を下部電極２に供給するた
めに、マスフローコントローラ（ＭＦＣ）１７及びバル
ブ１８が設けられている。Further, in order to supply the lower electrode 2 with a cooling gas (He) for controlling the temperature of the substrate 19 sucked and held by the lower electrode 2 during the plasma processing to a favorable state, a mass flow controller (MFC) is used. 17 and a valve 18 are provided.
【００２３】コントローラ１００は、試料の吸着、プラ
ズマ処理、静電力の除電等を制御するために、ＥＳＣ電
源、プラズマ生成用高周波電源８、バイアス電源１０、
ガス供給部１３、マスフローコントローラ（ＭＦＣ）１
７、真空ポンプ等を、後で述べるシーケンスに従って制
御する。The controller 100 includes an ESC power supply, a plasma-generating high-frequency power supply 8, a bias power supply 10, and a power supply for controlling sample adsorption, plasma processing, static electricity elimination, and the like.
Gas supply unit 13, mass flow controller (MFC) 1
7. Control the vacuum pump and the like according to the sequence described later.
【００２４】エッチング処理を行う場合、処理の対象物
である試料１９は、処理室１の下部電極２の上に載置さ
れ、静電チャックにより吸着される。一方、ガス供給部
１３からガス導入室を介して、試料１９のエッチング処
理に必要なガスが処理室１に供給される。処理室１は真
空ポンプ１５、１６により真空排気され、処理室１が試
料の処理圧力、例えば０．４〜４．０Ｐａ（パスカル）
になるように減圧排気される。次に、プラズマ生成用高
周波電源８より１０MHｚ〜２４５０MHｚ、望ましくは１
００MHｚ〜５００MHｚの高周波電力を出力して、処理室
１の処理ガスをプラズマ化する。When performing an etching process, a sample 19 to be processed is placed on the lower electrode 2 in the processing chamber 1 and is attracted by an electrostatic chuck. On the other hand, a gas necessary for etching the sample 19 is supplied from the gas supply unit 13 to the processing chamber 1 via the gas introduction chamber. The processing chamber 1 is evacuated by vacuum pumps 15 and 16, and the processing chamber 1 is set to a processing pressure of a sample, for example, 0.4 to 4.0 Pa (Pascal).
It is exhausted under reduced pressure so that Next, 10 MHz to 2450 MHz, preferably 1 MHz from the high frequency power source 8 for plasma generation.
A high frequency power of 00 MHz to 500 MHz is output to convert the processing gas in the processing chamber 1 into plasma.
【００２５】このプラズマ生成用高周波電源８から供給
される高周波電力と磁場形成手段により形成された静磁
場とにより、上部電極３と下部電極２との間に高密度の
プラズマ２０を生成させる。また、電子のサイクロトロ
ン共鳴を生じさせることにより、低ガス圧でかつ高い密
度のプラズマを生成させることができる。A high-density plasma 20 is generated between the upper electrode 3 and the lower electrode 2 by the high-frequency power supplied from the high-frequency power supply 8 for plasma generation and the static magnetic field formed by the magnetic field forming means. In addition, by generating cyclotron resonance of electrons, plasma with low gas pressure and high density can be generated.
【００２６】他方、下部電極２に、バイアス用高周波電
源１０から高周波電圧を印加し、発生する自己バイアス
により、プラズマ２０中のイオンの入射エネルギーを制
御して試料１９に対するエッチング処理を行う。On the other hand, a high frequency voltage is applied to the lower electrode 2 from a high frequency power supply for biasing 10, and the sample 19 is etched by controlling the incident energy of ions in the plasma 20 by the generated self-bias.
【００２７】図１の真空処理室を、絶縁膜（例えばＳｉ
Ｏ2, ＳｉＮ，ＢＰＳＧ等）のエッチングに用いる場
合、エッチング用のガスとしては、Ｃ4Ｆ8：１〜５％，
Ａｒ：９０〜９５％，Ｏ2：０〜５％もしくは、Ｃ
4Ｆ8：１〜５％，Ａｒ：７０〜９０％，Ｏ2：０〜５
％，ＣＯ：１０〜２０％，の組成のものを用いる。The vacuum processing chamber shown in FIG.
O2, SiN, when used for etching of the BPSG, etc.), as a gas for etching, C 4 F 8: 1~5% ,
Ar: 90~95%, O 2: 0~5% or, C
4 F 8: 1~5%, Ar : 70~90%, O 2: 0~5
%, CO: 10 to 20%.
【００２８】直流電源１２の電位により、誘電体（誘電
率ε）の静電吸着膜２１を挟んで下部電極２と試料１９
を介して静電吸着回路が形成される。この状態で試料１
９は静電気力により下部電極２に係止、保持される。バ
イアス用高周波電源からの電圧の印加によって発生する
自己バイアス電圧によって、試料の吸着力の一部を確保
する。静電気力及び自己バイアス電圧により下部電極２
上に係止された試料１９の裏面には、ヘリウム、窒素、
アルゴン等の熱伝導ガスが供給される。熱伝導ガスは、
下部電極２の凹部に充填されるが、その圧力は、１０−
１００Ｔorr程度とする。直流電源１２の電圧を適切に
設定して、熱伝導ガスの圧力に十分耐えることのできる
吸着力を設定することができるので、熱伝導ガスの圧力
により試料１９が動いたり飛ばされたりすることはな
い。The lower electrode 2 and the sample 19 are sandwiched by the potential of the DC power supply 12 with the dielectric (dielectric constant ε) electrostatic adsorption film 21 interposed therebetween.
, An electrostatic suction circuit is formed. In this state, sample 1
Reference numeral 9 is locked and held on the lower electrode 2 by electrostatic force. The self-bias voltage generated by the application of the voltage from the bias high-frequency power source secures a part of the sample's attraction force. Lower electrode 2 due to electrostatic force and self-bias voltage
Helium, nitrogen,
A heat conductive gas such as argon is supplied. The heat transfer gas is
The concave portion of the lower electrode 2 is filled.
It is set to about 100 Torr. By appropriately setting the voltage of the DC power supply 12, it is possible to set an attraction force that can sufficiently withstand the pressure of the heat transfer gas, so that the sample 19 can be moved or skipped by the pressure of the heat transfer gas. Absent.
【００２９】図２は、プラズマ２０を発生させた時に、
下部電極２と処理室間に形成される静電吸着回路の等価
回路である。下部電極２（図示略）には、直流電源１２
及びバイアス用高周波電源１０から直流高電圧または高
周波電圧（Ｖc）が印加される。一方、試料１９（抵抗
Ｒ23、容量Ｃ23）の上側表面（電位Ｖa）は、プラズマ
２０（抵抗Ｒ22）中の電子を介して電気的に接地側に接
続される。直流高電圧または高周波電圧の印加に伴い、
静電吸着膜２１（誘電率ε、抵抗Ｒ24、容量Ｃ24）を挟
んで下部電極２と試料１９間には、大きな電圧差(Ｖｂ
−Ｖc)が生じる。（抵抗Ｒ24，Ｒ23≫Ｒ22、Ｃ24≫Ｃ2
3） 静電吸着回路は、この静電吸着膜２１の上下間の電圧差
(Ｖｂ−Ｖc)にもとづく静電吸着力を、試料１９の吸着
力として利用するものである。FIG. 2 shows that when the plasma 20 is generated,
It is an equivalent circuit of an electrostatic suction circuit formed between the lower electrode 2 and the processing chamber. A DC power supply 12 is connected to the lower electrode 2 (not shown).
A DC high voltage or a high frequency voltage (Vc) is applied from the bias high frequency power supply 10. On the other hand, the upper surface (potential Va) of the sample 19 (resistance R23, capacitance C23) is electrically connected to the ground via electrons in the plasma 20 (resistance R22). With the application of DC high voltage or high frequency voltage,
A large voltage difference (Vb) is applied between the lower electrode 2 and the sample 19 across the electrostatic attraction film 21 (dielectric constant ε, resistance R24, capacitance C24).
-Vc) occurs. (Resistance R24, R23≫R22, C24≫C2
3) The electrostatic attraction circuit is provided with a voltage difference between the upper and lower sides of the electrostatic attraction film 21.
The electrostatic attraction force based on (Vb−Vc) is used as the attraction force of the sample 19.
【００３０】ところで、プラズマに図３の(a)に示すよ
うな正弦波の高周波数を印加すると、試料１９の上側表
面には図３の(ｂ)に示すような、印加高周波電圧のほぼ
１／２に等しい自己バイアス電圧が生ずることが知られ
ている。このバイアス用高周波電源１０からの電圧印加
に伴い発生する自己バイアス電圧は、図２のＶａの電圧
となって表れる。従って、静電吸着膜２１を挟んで下部
電極２と試料１９間に発生する電圧差(Ｖｂ−Ｖc)、換
言すると静電吸着力を、この自己バイアス電圧を利用し
て制御することができる。When a high frequency of a sine wave as shown in FIG. 3A is applied to the plasma, the upper surface of the sample 19 has an applied high frequency voltage of approximately 1% as shown in FIG. It is known that a self-bias voltage equal to / 2 results. The self-bias voltage generated by the application of the voltage from the bias high-frequency power supply 10 appears as a voltage Va in FIG. Therefore, the voltage difference (Vb-Vc) generated between the lower electrode 2 and the sample 19 across the electrostatic attraction film 21, in other words, the electrostatic attraction force can be controlled using the self-bias voltage.
【００３１】例えば、±８００Ｖの高周波電圧を印加す
ると、おおよそ−７５０Ｖの自己バイアス電圧が発生す
る。従って、直流電源１２に＋４００Ｖを印加した場
合、静電吸着膜２１を挟んで下部電極２と試料１９間に
発生する電圧差(Ｖｂ−Ｖc)を、４００Ｖよりも大きな
値とすることもできる。For example, when a high frequency voltage of ± 800 V is applied, a self-bias voltage of about -750 V is generated. Therefore, when +400 V is applied to the DC power supply 12, the voltage difference (Vb−Vc) generated between the lower electrode 2 and the sample 19 across the electrostatic attraction film 21 can be set to a value larger than 400 V.
【００３２】図４に、本発明によるプラズマ処理の具体
的なシーケンスの一例を示す。この例は、処理の開始時
に、ＥＳＣ電圧をオン、オフする点に特徴がある。FIG. 4 shows an example of a specific sequence of the plasma processing according to the present invention. This example is characterized in that the ESC voltage is turned on and off at the start of processing.
【００３３】最初に、真空処理室１に処理ガスを導入す
るとともに、（ａ）処理室１を所定の試料処理圧力、例
えば０．４〜４．０Ｐａ（パスカル）になるように、減
圧排気する。処理室１の圧力制御が完了すると、次に、
（ｂ）プラズマ生成用高周波電源８より１０MHｚ〜２４
５０MHｚ、望ましくは１００MHｚ〜５００MHｚの高周波
電力を出力して、処理室１の処理ガスをプラズマ化す
る。First, a processing gas is introduced into the vacuum processing chamber 1, and (a) the processing chamber 1 is evacuated and reduced to a predetermined sample processing pressure, for example, 0.4 to 4.0 Pa (Pascal). . When the pressure control of the processing chamber 1 is completed,
(B) 10 MHz to 24 from high frequency power supply 8 for plasma generation
A high frequency power of 50 MHz, desirably 100 MHz to 500 MHz is output to convert the processing gas in the processing chamber 1 into plasma.
【００３４】一方、（ｄ）下部電極２に試料を配置した
状態で、直流電源１２からＥＳＣ電圧を供給して試料１
９を静電吸着力により下部電極２に吸着、保持する。ま
た、（ｃ）バイアス用高周波電源１０により試料１９に
高周波電圧を印加する。高周波電圧の印加により発生す
る自己バイアス電圧によって、試料１の吸着力の一部を
確保する。また、（ｅ）冷却ガス（Ｈｅ）を下部電極２
と静電吸着された試料１９の裏面の間に供給する。な
お、自己バイアス電圧によって試料１の吸着力を確保し
た後は、（ｄ）に示すようにＥＳＣ電圧をオフにし、自
己バイアス電圧のみで試料１を吸着保持する。従って、
このときの、試料１９に対する吸着力は（ｆ）に示すよ
うに、ＥＳＣ電圧と自己バイアス電圧に応じて、ステッ
プ状に変化する。このような吸着力で試料１９を下部電
極２に吸着した状態で、試料１９をプラズマにより処理
する。(D) On the other hand, with the sample placed on the lower electrode 2, an ESC voltage is supplied from the DC power supply 12 to
9 is attracted and held on the lower electrode 2 by electrostatic attraction. (C) A high frequency voltage is applied to the sample 19 by the high frequency power supply 10 for bias. A part of the attraction force of the sample 1 is secured by the self-bias voltage generated by applying the high-frequency voltage. Further, (e) the cooling gas (He) is supplied to the lower electrode 2.
And between the back surface of the sample 19 electrostatically attracted. After securing the attraction force of the sample 1 by the self-bias voltage, the ESC voltage is turned off as shown in (d), and the sample 1 is attracted and held only by the self-bias voltage. Therefore,
At this time, as shown in (f), the attraction force on the sample 19 changes stepwise according to the ESC voltage and the self-bias voltage. The sample 19 is treated with plasma in a state where the sample 19 is adsorbed on the lower electrode 2 with such an adsorbing force.
【００３５】プラズマ処理の終了に際しては、（ｃ）バ
イアス用高周波電源１０により試料１９に対する高周波
電圧の印加をオフにする。ただし、高周波電圧の印加を
いきなりオフにすると自己バイアス電圧による吸着力が
失われるので、（ｄ）直流電源１２から下部電極２に供
給されるＥＳＣ電圧を設定電圧まで徐々に増加させ、吸
着力を確保したのち、バイアス用高周波電源１０をオフ
にする。At the end of the plasma processing, (c) the application of the high-frequency voltage to the sample 19 is turned off by the high-frequency power source 10 for bias. However, if the application of the high-frequency voltage is suddenly turned off, the attraction force due to the self-bias voltage is lost. (D) The ESC voltage supplied from the DC power supply 12 to the lower electrode 2 is gradually increased to the set voltage to reduce the attraction force. After securing, the high frequency power supply for bias 10 is turned off.
【００３６】その後、（ｅ）下部電極２と吸着された試
料１９の裏面の間への冷却ガスの供給を減少、停止させ
た後、排気を行う。試料１９の裏面の冷却ガスの圧力が
所定値以下になったら、除電ステップに入り、ＥＳＣ電
圧をゼロにする。さらに、高周波電圧の印加をオフにし
てから放電持続時間経過後、プラズマ生成用高周波電源
８をオフにする。このとき、試料１９に対する吸着力は
（ｆ）に示すように緩やかに低減する。Thereafter, (e) the supply of the cooling gas between the lower electrode 2 and the back surface of the adsorbed sample 19 is reduced and stopped, and then the gas is exhausted. When the pressure of the cooling gas on the back surface of the sample 19 becomes equal to or lower than a predetermined value, the process proceeds to a neutralization step, and the ESC voltage is reduced to zero. Furthermore, after the application of the high-frequency voltage is turned off and the discharge duration time has elapsed, the high-frequency power source 8 for plasma generation is turned off. At this time, the adsorption force on the sample 19 gradually decreases as shown in FIG.
【００３７】図５に示すように、試料の吸着力は、常に
試料裏面の冷却ガスの圧力を上回っており、試料の吸着
力は、常に試料裏面の冷却ガスの圧力を上回っており、
熱伝導ガスの圧力により試料１９が動いたり飛ばされた
りすることはない。As shown in FIG. 5, the suction force of the sample always exceeds the pressure of the cooling gas on the back surface of the sample, and the suction force of the sample always exceeds the pressure of the cooling gas on the back surface of the sample.
The sample 19 does not move or fly due to the pressure of the heat transfer gas.
【００３８】図６に、本発明によるプラズマ処理の具体
的なシーケンスの他の例を示す。この例は、処理開始時
における試料の吸着力を、バイアス用高周波電源１０か
らの高周波電圧の印加による自己バイアス電圧のみによ
って与え、試料１９を下部電極２に吸着、保持する。処
理中、ＥＳＣ電圧はゼロに維持される。そして、処理終
了に際して、高周波電圧の印加オフと並行してＥＳＣ電
圧をオンにし、吸着力を付与した後、ＥＳＣ電圧をオフ
にして除電する点に特徴がある。FIG. 6 shows another example of a specific sequence of the plasma processing according to the present invention. In this example, the sample 19 is attracted and held by the lower electrode 2 by applying only the self-bias voltage by applying the high-frequency voltage from the bias high-frequency power supply 10 at the start of the process. During processing, the ESC voltage is maintained at zero. Then, at the end of the process, the ESC voltage is turned on in parallel with the application of the high-frequency voltage to be turned off, and after applying the attraction force, the ESC voltage is turned off and the charge is removed.
【００３９】すなわち、図４の例と比較すると、（ｃ）
バイアス用高周波電源１０により試料１９にセルフバイ
アスをかけ、処理開始時の試料１９に対する吸着力を与
える。そして、プラズマ処理の終了に際しては、（ｃ）
バイアス用高周波電源１０により試料１９に対するセル
フバイアスを解除するとともに、（ｄ）処理中、ＥＳＣ
電圧はゼロに維持されていたＥＳＣ電圧を、設定電圧ま
で徐々に増加させ、試料１９の吸着力を確保する。その
後、（ｅ）下部電極２と吸着された試料１９の裏面の間
への冷却ガスの供給を減少、停止させた後、排気する。
試料１９の裏面の冷却ガスの圧力が所定値以下になった
ら、ＥＳＣ電圧をゼロにする。このとき、試料１９に対
する吸着力は（ｆ）に示すように緩やかに低減する。こ
の例でも、図７に示すように、試料の吸着力は、常に試
料裏面の冷却ガスの圧力を上回っている。That is, as compared with the example of FIG.
A self-bias is applied to the sample 19 by the high-frequency power source 10 for bias, and an attraction force to the sample 19 at the start of processing is given. Then, at the end of the plasma processing, (c)
The self-bias for the sample 19 is released by the high-frequency power supply 10 for bias, and (d) the ESC
The voltage is gradually increased from the ESC voltage maintained at zero to the set voltage to secure the suction force of the sample 19. Thereafter, (e) the supply of the cooling gas between the lower electrode 2 and the back surface of the adsorbed sample 19 is reduced, stopped, and then exhausted.
When the pressure of the cooling gas on the back surface of the sample 19 falls below a predetermined value, the ESC voltage is set to zero. At this time, the adsorption force on the sample 19 gradually decreases as shown in FIG. Also in this example, as shown in FIG. 7, the adsorption force of the sample always exceeds the pressure of the cooling gas on the back surface of the sample.
【００４０】なお、ＥＳＣ電圧は、処理中、図６（ｄ）
に示したようにゼロに維持しても良いが、数ボルト以下
の小さい電圧としても良い。The ESC voltage during processing is shown in FIG.
The voltage may be maintained at zero as shown in the above, but may be a small voltage of several volts or less.
【００４１】図８は、ＥＳＣ電圧と吸着力及び除電時間
の関係を示している。実線と破線で示すように、静電吸
着膜の抵抗値が高いほど、高いＥＳＣ電圧、換言すると
大きな静電吸着力が得られる。また、同じ材料の静電吸
着膜では、除電開始前のＥＳＣ電圧が高いほど、除電時
間が長くなっている。FIG. 8 shows the relationship between the ESC voltage, the attraction force, and the static elimination time. As shown by the solid line and the broken line, the higher the resistance value of the electrostatic attraction film, the higher the ESC voltage, in other words, the greater the electrostatic attraction force. Further, in the case of the electrostatic attraction film made of the same material, the higher the ESC voltage before the start of static elimination, the longer the static elimination time.
【００４２】本発明では、試料の吸着力の一部を自己バ
イアス電圧によって分担しているため、プラズマ処理
中、換言すると除電開始直前のＥＳＣ電圧を低くしてい
る。ＥＳＣ電圧を低くすることによって、吸着力が許容
値以下になるまでの除電時間を、ｔ0からｔ1へと、１０
秒ないし数十秒短縮することができる。In the present invention, since a part of the adsorption force of the sample is shared by the self-bias voltage, the ESC voltage during the plasma processing, in other words, immediately before the start of the charge removal, is reduced. By lowering the ESC voltage, the static elimination time until the adsorbing force falls below the allowable value is reduced from t0 to t1 by 10 times.
Seconds to tens of seconds can be saved.
【００４３】あるいはまた、静電吸着膜の抵抗値の低い
材料、例えば１０10−１０11Ω／ｃｍの抵抗値を有する
静電吸着膜を採用しても、除電時間をｔ0からｔ2へと、
１０秒ないし数十秒短縮することができる。Alternatively, even if a material having a low resistance value of the electrostatic attraction film, for example, an electrostatic attraction film having a resistance value of 10 10 -10 11 Ω / cm is employed, the static elimination time is changed from t0 to t2.
It can be reduced from 10 seconds to several tens of seconds.
【００４４】図９は、本発明の他の実施例になる除電時
のバイアス用高周波電源、ＥＳＣ電圧の制御のタイミン
グチャートを示している。本実施例では、除電時に印加
するバイアス高周波電圧の大きさをステップ状に減少さ
せ、他方、直流電源１２から下部電極２に供給されるＥ
ＳＣ電圧をＥＳＣ（Ｌ）、ＥＳＣ（Ｈ）のようにステッ
プ状に増加させている。このように、処理終了に際し
て、高周波電圧の減少と並行してＥＳＣ電圧を増加させ
て必要な吸着力を確保している。この実施例は、図４、
図６に示した実施例のように電圧を連続的に増減させる
方式に比べて、制御が簡単になる利点がある。FIG. 9 is a timing chart for controlling a bias high frequency power supply and an ESC voltage at the time of static elimination according to another embodiment of the present invention. In the present embodiment, the magnitude of the bias high-frequency voltage applied at the time of static elimination is reduced in a step-like manner.
The SC voltage is increased stepwise like ESC (L) and ESC (H). As described above, at the end of the process, the required suction force is secured by increasing the ESC voltage in parallel with the decrease in the high-frequency voltage. This embodiment is illustrated in FIG.
There is an advantage that the control is simpler than the method of continuously increasing and decreasing the voltage as in the embodiment shown in FIG.
【００４５】図１０は、図９の実施例における、試料の
吸着力と試料裏面の冷却ガスの圧力の関係を示したもの
である。試料の吸着力は、常に試料裏面の冷却ガスの圧
力を上回っており、熱伝導ガスの圧力により試料１９が
動いたり飛ばされたりすることはない。換言すると、バ
イアス用高周波電源、ＥＳＣ電圧による試料の吸着力が
常に、熱伝導ガスの圧力を所定の大きさの範囲で上回る
ように制御するのが望ましい。FIG. 10 shows the relationship between the suction force of the sample and the pressure of the cooling gas on the back surface of the sample in the embodiment of FIG. The adsorbing force of the sample always exceeds the pressure of the cooling gas on the back surface of the sample, and the sample 19 does not move or fly due to the pressure of the heat conducting gas. In other words, it is desirable to control the adsorption force of the sample by the bias high-frequency power supply and the ESC voltage to always exceed the pressure of the heat transfer gas within a predetermined range.
【００４６】なお、下部電極２に試料を配置した状態で
直流電源１２からＥＳＣ電圧を供給し試料１の吸着力を
確保した後、冷却ガスを供給し、その後、プラズマ生成
用高周波電源８より高周波電力を出力し、ＥＳＣ電圧を
オフにするようにしても良い。 また、本発明は、プラ
ズマ発生とバイアス電圧を連動して制御するプラズマエ
ッチング装置へも適用できる。この場合、ＥＳＣ電圧の
調節範囲を大きくし、除電のときにはＥＳＣ電圧として
逆バイアスの電圧を与えるようにしてもよい。In the state where the sample is placed on the lower electrode 2, an ESC voltage is supplied from the DC power supply 12 to secure the adsorbing force of the sample 1, and then a cooling gas is supplied. Power may be output and the ESC voltage may be turned off. In addition, the present invention can be applied to a plasma etching apparatus that controls plasma generation and a bias voltage in conjunction with each other. In this case, the adjustment range of the ESC voltage may be widened, and a reverse bias voltage may be applied as the ESC voltage at the time of static elimination.
【００４７】[0047]
【発明の効果】本発明によれば、セルフバイアスによっ
て発生する自己バイアス電圧によって試料の吸着力の一
部を確保するため、静電吸着用の電圧を低くすることが
でき、これにより除電時間を大幅に短縮することができ
る。According to the present invention, the voltage for electrostatic attraction can be reduced because a part of the attraction force of the sample is secured by the self-bias voltage generated by the self-bias, thereby reducing the static elimination time. It can be greatly reduced.
【図１】本発明の一実施例になる、２電極型のプラズマ
エッチング装置の縦断面図である。FIG. 1 is a longitudinal sectional view of a two-electrode type plasma etching apparatus according to one embodiment of the present invention.
【図２】プラズマを発生させた時に、下部電極と処理室
間に形成される静電吸着回路の等値回路図である。FIG. 2 is an equivalent circuit diagram of an electrostatic suction circuit formed between a lower electrode and a processing chamber when plasma is generated.
【図３】自己バイアス電圧の説明図である。FIG. 3 is an explanatory diagram of a self-bias voltage.
【図４】本発明によるプラズマ処理の具体的なシーケン
スの一例を示す図である。FIG. 4 is a diagram showing an example of a specific sequence of the plasma processing according to the present invention.
【図５】図４の処理における、試料の吸着力と試料裏面
の冷却ガスの圧力の関係を示す図である。FIG. 5 is a diagram showing the relationship between the adsorption force of the sample and the pressure of the cooling gas on the back surface of the sample in the process of FIG.
【図６】本発明によるプラズマ処理の具体的なシーケン
スの他の例を示す図である。FIG. 6 is a diagram showing another example of a specific sequence of the plasma processing according to the present invention.
【図７】図６の処理における、試料の吸着力と試料裏面
の冷却ガスの圧力の関係を示す図である。FIG. 7 is a diagram showing the relationship between the adsorption force of the sample and the pressure of the cooling gas on the back surface of the sample in the process of FIG.
【図８】ＥＳＣ電圧と吸着力及び除電時間の関係を示す
図である。FIG. 8 is a diagram showing a relationship between an ESC voltage, an attraction force, and a static elimination time.
【図９】本発明の他の実施例になる除電時のバイアス用
高周波電源、ＥＳＣ電圧の制御のタイミングチャートを
示す図である。FIG. 9 is a diagram showing a timing chart for controlling a bias high-frequency power supply and an ESC voltage during static elimination according to another embodiment of the present invention.
【図１０】図９の実施例における、試料の吸着力と試料
裏面の冷却ガスの圧力の関係を示したものである。FIG. 10 is a graph showing the relationship between the suction force of the sample and the pressure of the cooling gas on the back surface of the sample in the embodiment of FIG.
１…プラズマ処理室、２…下部電極、３…上部電極、
４，５…電磁コイル、８…プラズマ生成用高周波電源、
１０…バイアス用高周波電源、１２…直流電源、１９…
試料、２０…プラズマ、２１…静電吸着膜、1 ... plasma processing chamber, 2 ... lower electrode, 3 ... upper electrode,
4, 5 ... electromagnetic coil, 8 ... high frequency power supply for plasma generation,
10 ... High frequency power supply for bias, 12 ... DC power supply, 19 ...
Sample, 20: plasma, 21: electrostatic attraction film,
フロントページの続き (72)発明者 一丸 政治 山口県下松市大字東豊井794番地 日立笠 戸エンジニアリング株式会社内 (72)発明者 武藤 悟 山口県下松市大字東豊井794番地 日立テ クノエンジニアリング株式会社笠戸事業所 内Continued on the front page (72) Inventor Ichimaru Politics 794, Higashi-Toyoi, Kazamatsu-shi, Yamaguchi Prefecture Within Hitachi Kasado Engineering Co., Ltd. Inside the door office
Claims (19)
極と、 前記電極に前記試料を静電吸着力によって保持する静電
吸着手段と、 前記電極と前記試料の裏面間に伝熱ガスを導入する伝熱
ガス導入手段と、 前記処理室内にプラズマを生成するためのプラズマ生成
用高周波電源と、 前記試料のエッチング時に前記電極に高周波バイアス電
圧を印加するバイアス用高周波電源を備えたプラズマ処
理装置において、 前記バイアス用高周波電源からの高周波バイアス電圧の
印加により発生する自己バイアス電圧によって、前記試
料の吸着力の一部を確保するようにしたことを特徴とす
るプラズマ処理装置。1. An electrode provided in a processing chamber, on which a sample is placed, an electrostatic attraction means for holding the sample on the electrode by an electrostatic attraction force, and a heat transfer gas between the electrode and a back surface of the sample. Plasma processing means for introducing a heat transfer gas for introducing plasma, a high-frequency power supply for generating plasma for generating plasma in the processing chamber, and a high-frequency power supply for bias for applying a high-frequency bias voltage to the electrode during etching of the sample In the apparatus, a part of the sample adsorption force is secured by a self-bias voltage generated by application of a high-frequency bias voltage from the bias high-frequency power supply.
ｃｍの抵抗値を有する静電吸着膜を備えたことを特徴と
する請求項１記載のプラズマ処理装置。2. The method according to claim 1, wherein said electrostatic attraction means is 10 10 -10 11 Ω /
2. The plasma processing apparatus according to claim 1, further comprising an electrostatic attraction film having a resistance value of 1 cm.
ｚ−４ＭＨｚの周波数を有することを特徴とする請求項
１記載のプラズマ処理装置。3. The high frequency power supply for biasing is 400 KH.
2. The plasma processing apparatus according to claim 1, having a frequency of z-4 MHz.
電極と前記試料の裏面間に導入される伝熱ガスの圧力
が、１０−１００Ｔorrである、ことを特徴とする請求
項１記載のプラズマ処理装置。4. The method according to claim 1, wherein the pressure of the heat transfer gas introduced between the one electrode and the back surface of the sample by the heat transfer gas introducing means is 10-100 Torr. Plasma processing equipment.
特徴とする請求項１記載のプラズマ処理装置。5. The plasma processing apparatus according to claim 1, wherein said electrostatic attraction means is of a monopolar type.
特徴とする請求項１記載のプラズマ処理装置。6. The plasma processing apparatus according to claim 1, wherein said electrostatic suction means is of a bipolar type.
極と、 前記電極に前記試料を静電吸着力によって保持する静電
吸着手段と、 前記電極と前記試料の裏面間に伝熱ガスを導入する伝熱
ガス導入手段と、 前記処理室内にプラズマを生成するためのプラズマ生成
用高周波電源と、 前記試料のエッチング時に前記電極に高周波バイアス電
圧を印加するバイアス用高周波電源を備えたプラズマ処
理装置によるプラズマ処理方法において、 前記バイアス用高周波電源からの高周波バイアス電圧の
印加により発生する自己バイアス電圧によって、前記試
料の吸着力の一部を確保し、前記自己バイアス電圧をオ
フにするときに前記静電吸着手段による静電吸着力によ
って前記試料の吸着力を確保するようにしたことを特徴
とするプラズマ処理方法。7. An electrode provided in a processing chamber, on which a sample is disposed, electrostatic adsorption means for holding the sample on the electrode by an electrostatic adsorption force, and a heat transfer gas between the electrode and a back surface of the sample. Plasma processing means for introducing a heat transfer gas for introducing plasma, a high-frequency power supply for generating plasma for generating plasma in the processing chamber, and a high-frequency power supply for bias for applying a high-frequency bias voltage to the electrode during etching of the sample In the plasma processing method using the apparatus, a self-bias voltage generated by application of a high-frequency bias voltage from the bias high-frequency power source secures a part of the sample adsorption force and turns off the self-bias voltage when the self-bias voltage is turned off. A plasma processing method, characterized in that a suction force of the sample is secured by an electrostatic suction force of an electrostatic suction means.
着力を自己バイアス電圧のみによって確保するようにし
たことを特徴とする請求項７記載のプラズマ処理方法。8. The plasma processing method according to claim 7, wherein the attraction force of the sample during the plasma processing is secured only by a self-bias voltage.
着力を、前記静電吸着手段により付与された数ボルト電
圧による静電吸着力と、前記自己バイアス電圧とによっ
て確保するようにしたことを特徴とする請求項７記載の
プラズマ処理方法。9. The apparatus according to claim 1, wherein an attraction force of said sample during said plasma processing is secured by an electrostatic attraction force of several volts applied by said electrostatic attraction means and said self-bias voltage. The plasma processing method according to claim 7, wherein
電吸着手段によりＥＳＣ電圧を供給し試料の吸着力を確
保した後、前記伝熱ガスを供給するようにしたことを特
徴とする請求項７記載のプラズマ処理方法。10. The heat transfer gas is supplied after an ESC voltage is supplied by the electrostatic suction means in a state where a sample is placed on the electrode to secure a suction force of the sample. Item 8. The plasma processing method according to Item 7.
電吸着手段によりＥＳＣ電圧を供給し試料の吸着力を確
保した後、前記伝熱ガスを供給し、その後、前記バイア
ス用高周波電源より前記高周波バイアス電圧を出力し、
前記ＥＳＣ電圧をオフにするようにしたことを特徴とす
る請求項７記載のプラズマ処理方法。11. A heat transfer gas is supplied after an ESC voltage is supplied by said electrostatic suction means to secure a suction force of a sample in a state where a sample is disposed on said electrode, and thereafter, said bias high frequency power supply is used. Outputting the high frequency bias voltage,
8. The plasma processing method according to claim 7, wherein the ESC voltage is turned off.
方に試料を配置するステップと、 該試料を静電吸着力によって前記電極に保持するステッ
プと、 前記試料が配置された雰囲気に、処理ガスを導入するス
テップと、 一方の前記電極と前記試料の裏面間に冷却ガスを導入す
るステップと、 前記雰囲気を前記試料の処理圧力に減圧排気するステッ
プと、 前記圧力下で前記処理ガスをプラズマ化するステップ
と、 前記試料に高周波バイアス電圧を印加し該高周波バイア
ス電圧の印加によって生じるセルフバイアス電圧により
前記試料の吸着力を得た後、前記静電吸着力を解除する
ステップと、 該試料を前記プラズマにより処理するステップと、 該試料のプラズマ処理の終了に伴い、該試料を静電吸着
力によって前記電極に保持するとともに前記高周波バイ
アス電圧をオフとするステップとからなり、 前記試料としてＳｉＯ2を用いることを特徴とするプラ
ズマ処理方法。12. A step of arranging a sample on one of a pair of electrodes provided in a vacuum processing chamber; a step of holding the sample on the electrode by electrostatic attraction; Introducing a processing gas; introducing a cooling gas between one of the electrodes and the back surface of the sample; depressurizing and exhausting the atmosphere to a processing pressure of the sample; and discharging the processing gas under the pressure. Converting the sample into a plasma, applying a high-frequency bias voltage to the sample, obtaining an attraction force of the sample by a self-bias voltage generated by application of the high-frequency bias voltage, and releasing the electrostatic attraction force; Treating the sample with the plasma with the end of the plasma treatment of the sample. The high frequency bias voltage consists of a step of turning off the plasma processing method which comprises using SiO 2 as the sample.
理室内に配置されイオン律速のプラズマ処理となる試料
に高周波バイアスを印加し、前記高周波バイアスの印加
により生じたセルフバイアスによって前記試料を試料台
に静電吸着させ、前記試料を前記プラズマにより処理す
ることを特徴とするプラズマ処理方法。13. A plasma is generated in a processing chamber, a high-frequency bias is applied to a sample placed in the processing chamber and subjected to ion-limited plasma processing, and the sample is mounted on a sample stage by a self-bias generated by the application of the high-frequency bias. A plasma processing method, wherein the sample is processed by the plasma by electrostatically adsorbing the sample.
理室内に配置されイオン律速のプラズマ処理となる試料
に高周波バイアスを印加し前記高周波バイアスの印加に
より生じたセルフバイアスによって前記試料を試料台に
静電吸着させ、前記静電吸着した試料の裏面に伝熱ガス
を供給し前記試料を前記プラズマにより処理することを
特徴とするプラズマ処理方法。14. A plasma is generated in a processing chamber, a high-frequency bias is applied to a sample placed in the processing chamber and subjected to ion-limited plasma processing, and the sample is placed on a sample stage by a self-bias generated by the application of the high-frequency bias. A plasma processing method comprising electrostatically adsorbing, supplying a heat transfer gas to the back surface of the electrostatically adsorbed sample, and treating the sample with the plasma.
いて、前記セルフバイアスは、前記試料の裏面に供給さ
れる伝熱ガスのガス圧による試料のうき上がりを防止可
能な吸着力を生じさせる大きさであることを特徴とする
プラズマ処理方法。15. The plasma processing method according to claim 14, wherein said self-bias generates an attraction force capable of preventing a sample from rising due to a gas pressure of a heat transfer gas supplied to a back surface of said sample. A plasma processing method, characterized in that:
て、前記高周波バイアスの印加停止前に前記試料台に直
流電圧を印加し、前記試料と前記試料台との間に静電力
を生じさせることを特徴とするプラズマ処理方法。16. The method according to claim 13, wherein a DC voltage is applied to said sample stage before application of said high-frequency bias is stopped to generate an electrostatic force between said sample and said sample stage. Characteristic plasma processing method.
スの印加停止前に前記試料台に直流電圧を印加し、前記
試料と前記試料台との間に静電力を生じさせ、前記直流
電圧印加後に前記伝熱ガスの供給を停止することを特徴
とするプラズマ処理方法。17. The method according to claim 14, wherein a DC voltage is applied to the sample stage before the application of the high-frequency bias is stopped, and an electrostatic force is generated between the sample and the sample stage. A plasma processing method comprising stopping supply of a heat transfer gas.
て、前記高周波バイアスの印加前に前記試料台に直流電
圧を印加し、前記試料と前記試料台との間に静電力を生
じさせ、前記試料を静電吸着保持し、前記高周波バイア
ス印加後に前記直流電圧の印加を停止または印加電圧を
下げることを特徴とするプラズマ処理方法。18. The method according to claim 13, wherein a DC voltage is applied to the sample stage before the application of the high-frequency bias to generate an electrostatic force between the sample and the sample stage. Wherein the application of the DC voltage is stopped or the applied voltage is reduced after the application of the high frequency bias.
スの印加前に前記試料台に直流電圧を印加し、前記試料
と前記試料台との間に静電力を生じさせ、前記試料を静
電吸着保持し、 前記試料の静電吸着後に、前記伝熱ガ
スを供給し、前記伝熱ガス供給後に前記高周波バイアス
を印加することを特徴とするプラズマ処理方法。19. The apparatus according to claim 14, wherein a DC voltage is applied to the sample stage before the application of the high-frequency bias, an electrostatic force is generated between the sample and the sample stage, and the sample is electrostatically held. And a step of supplying the heat transfer gas after the sample is electrostatically adsorbed, and applying the high frequency bias after the supply of the heat transfer gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07257598A JP4035225B2 (en) | 1998-03-20 | 1998-03-20 | Plasma processing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07257598A JP4035225B2 (en) | 1998-03-20 | 1998-03-20 | Plasma processing method |
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| Publication Number | Publication Date |
|---|---|
| JPH11274141A true JPH11274141A (en) | 1999-10-08 |
| JP4035225B2 JP4035225B2 (en) | 2008-01-16 |
Family
ID=13493330
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07257598A Expired - Fee Related JP4035225B2 (en) | 1998-03-20 | 1998-03-20 | Plasma processing method |
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| Country | Link |
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