JPH11274449A - 固体撮像素子及びその製造方法 - Google Patents

固体撮像素子及びその製造方法

Info

Publication number
JPH11274449A
JPH11274449A JP10345295A JP34529598A JPH11274449A JP H11274449 A JPH11274449 A JP H11274449A JP 10345295 A JP10345295 A JP 10345295A JP 34529598 A JP34529598 A JP 34529598A JP H11274449 A JPH11274449 A JP H11274449A
Authority
JP
Japan
Prior art keywords
region
forming
film
formation region
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10345295A
Other languages
English (en)
Japanese (ja)
Inventor
Jin Sobb Shim
ジン ソッブ シム
So Kyu I
ソ キュ イ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of JPH11274449A publication Critical patent/JPH11274449A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10345295A 1998-02-16 1998-12-04 固体撮像素子及びその製造方法 Pending JPH11274449A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980004629A KR100263473B1 (ko) 1998-02-16 1998-02-16 고체촬상소자 및 그의 제조방법
KR4629/1998 1998-02-16

Publications (1)

Publication Number Publication Date
JPH11274449A true JPH11274449A (ja) 1999-10-08

Family

ID=19533143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345295A Pending JPH11274449A (ja) 1998-02-16 1998-12-04 固体撮像素子及びその製造方法

Country Status (3)

Country Link
US (2) US6300157B1 (ko)
JP (1) JPH11274449A (ko)
KR (1) KR100263473B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4419264B2 (ja) * 2000-03-31 2010-02-24 ソニー株式会社 固体撮像装置
KR100652070B1 (ko) * 2000-08-29 2006-11-30 매그나칩 반도체 유한회사 씨씨디(ｃｃｄ)의 제조 방법
KR100884203B1 (ko) * 2002-04-26 2009-02-18 매그나칩 반도체 유한회사 광차단층을 구비한 이미지센서
JP2006059995A (ja) * 2004-08-19 2006-03-02 Matsushita Electric Ind Co Ltd 増幅型固体撮像装置
KR100672995B1 (ko) * 2005-02-02 2007-01-24 삼성전자주식회사 이미지 센서의 제조 방법 및 그에 의해 형성된 이미지 센서
US8492214B2 (en) 2011-03-18 2013-07-23 International Business Machines Corporation Damascene metal gate and shield structure, methods of manufacture and design structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (ko) * 1970-10-05 1974-10-31 Radiotechnique Compelec
DE4116694C2 (de) * 1990-05-31 2001-10-18 Fuji Electric Co Ltd Mit einer Fotodiode versehene Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US5403384A (en) 1993-10-14 1995-04-04 Fmc Corporation Apparatus and method for avoidance of turbomachinery pressure surge
KR0136933B1 (ko) * 1994-05-21 1998-04-24 문정환 씨씨디(ccd) 영상소자 및 제조방법
US5618384A (en) 1995-12-27 1997-04-08 Chartered Semiconductor Manufacturing Pte, Ltd. Method for forming residue free patterned conductor layers upon high step height integrated circuit substrates using reflow of photoresist
US6166372A (en) * 1997-05-27 2000-12-26 Sharp Kabushiki Kaisha Polarization detection device and method for producing the same
JP3927696B2 (ja) * 1998-08-05 2007-06-13 キヤノン株式会社 撮像装置

Also Published As

Publication number Publication date
KR100263473B1 (ko) 2000-08-01
KR19990070019A (ko) 1999-09-06
US6300157B1 (en) 2001-10-09
US20010028073A1 (en) 2001-10-11
US6627929B2 (en) 2003-09-30

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