JPH11296005A - Thermal fixing device - Google Patents
Thermal fixing deviceInfo
- Publication number
- JPH11296005A JPH11296005A JP10323598A JP10323598A JPH11296005A JP H11296005 A JPH11296005 A JP H11296005A JP 10323598 A JP10323598 A JP 10323598A JP 10323598 A JP10323598 A JP 10323598A JP H11296005 A JPH11296005 A JP H11296005A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- bypass
- substrate
- fixing device
- fixing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000000919 ceramic Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000010432 diamond Substances 0.000 claims abstract description 43
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 42
- 238000012546 transfer Methods 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 11
- 238000003825 pressing Methods 0.000 claims description 3
- 230000037303 wrinkles Effects 0.000 abstract description 9
- 230000006378 damage Effects 0.000 abstract description 4
- 238000013021 overheating Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 20
- 239000000203 mixture Substances 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000000191 radiation effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Fixing For Electrophotography (AREA)
- Control Of Resistance Heating (AREA)
Abstract
(57)【要約】
【課題】 セラミックヒーターを熱源とする加熱定着装
置の省エネルギー・クイックスタート性を活かしつつ、
転写材サイズのバリエーションに伴う非通紙部過熱によ
る紙皺、ヒーター周辺部の損傷を未然に防止する。
【解決手段】 定着部のヒーター基板を窒化アルミニウ
ム系セラミックス等の高熱伝導性セラミックスで構成
し、同基板上の少なくとも一面上に高熱伝導性のダイヤ
モンドを含む熱バイパスを配置した加熱定着装置であ
る。
(57) [Abstract] [Problem] While utilizing the energy saving and quick start property of a heat fixing device using a ceramic heater as a heat source,
Paper wrinkles due to overheating of the non-sheet passing portion due to variations in the transfer material size and damage to the periphery of the heater are prevented beforehand. SOLUTION: This is a heating and fixing device in which a heater substrate of a fixing unit is made of a high heat conductive ceramic such as an aluminum nitride ceramic, and a heat bypass including diamond having a high heat conductivity is arranged on at least one surface of the substrate.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、絶縁性セラミック
スを基板とし、その上に発熱部を付与したヒーター(以
下本発明ではこれをセラミックヒーターと言う)を具備
した加熱方式のトナー画像定着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating type toner image fixing device provided with a heater having an insulating ceramics substrate as a substrate and a heating portion provided thereon (hereinafter referred to as a ceramic heater in the present invention). .
【0002】[0002]
【従来の技術】ファクシミリや複写機、プリンター等の
画像定着装置の画像定着部(以下単に定着部と言う)にお
いては、感光ドラム上に形成したトナー像を転写材であ
る紙等の上に転写した後、定着部でこれを加熱・加圧し
て転写材上に焼き付けしている。この定着部は、セラミ
ックヒーターを具備した加熱ローラと、樹脂製の加圧ロ
ーラを主な構造要素とするものである。従来からの定着
装置の定着部においては、加熱ローラは円筒状の金属製
ロール中にハロゲンランプ等の熱源を設け、同ランプか
らの輻射熱で同ロール表面を加熱するようになってい
た。2. Description of the Related Art In an image fixing section (hereinafter simply referred to as a fixing section) of an image fixing apparatus such as a facsimile, a copying machine, a printer, etc., a toner image formed on a photosensitive drum is transferred onto a transfer material such as paper. After the fixing, the fixing unit heats and pressurizes the printing medium to print it on the transfer material. The fixing section has a heating roller provided with a ceramic heater and a pressure roller made of resin as main structural elements. In a fixing unit of a conventional fixing device, a heating roller is provided with a heat source such as a halogen lamp in a cylindrical metal roll, and heats the surface of the roll with radiant heat from the lamp.
【0003】また近年この熱源にセラミックヒーターを
用いたものが実用化されている。この種の定着装置は、
例えば特開昭63−313182号、特開平1−263
679号および特開平2−157878号の各公報に記
載されている。図1のaに横断面で見たその定着部の構
造を模式的に示す。同図で2は加熱ローラの外形を形成
する樹脂製の支持体、1は同ローラの支持体に固定され
たセラミックヒーター、3は同ヒーターおよび加熱ロー
ラの外周を回転しつつ、転写材を定着部に送り込む耐熱
樹脂製のフィルム(以下単に耐熱フィルムとも言う)、4
は加圧ローラ、5は両ローラ間に送り込まれる転写材、
10は同転写材面に形成されたトナー画像であり、誇張
して書き加えたものである。図1のbはaの中心部を拡
大したものである。同図で11はセラミックヒーターの
絶縁性セラミックからなる基板、12は同基板上に設け
られた発熱部(以下発熱体とも言う)、14は耐熱フィル
ムと相対し、発熱部の表面を同フィルムとの直接の摺接
摩耗から保護する絶縁性ガラスの層(以下単にガラス層
とも言う)、Wは加圧ローラ表面が加熱ローラ側に押し
つけられ、相手に密着することによって転写材を挟み込
むニップ部分(以下単にニップ部とも言う)の幅である。In recent years, a heat source using a ceramic heater has been put to practical use. This type of fixing device is
For example, JP-A-63-313182, JP-A-1-263
679 and JP-A-2-157787. FIG. 1A schematically shows the structure of the fixing portion viewed from a cross section. In FIG. 1, reference numeral 2 denotes a resin support that forms the outer shape of the heating roller, 1 denotes a ceramic heater fixed to the support of the roller, and 3 denotes a fixing of the transfer material while rotating around the heater and the heating roller. Heat-resistant resin film to be fed into the part (hereinafter simply referred to as heat-resistant film), 4
Is a pressure roller, 5 is a transfer material fed between both rollers,
Reference numeral 10 denotes a toner image formed on the surface of the transfer material, which is exaggeratedly added. FIG. 1b is an enlarged view of the central part of a. In the figure, 11 is a substrate made of an insulating ceramic of a ceramic heater, 12 is a heat generating portion (hereinafter also referred to as a heat generating member) provided on the substrate, 14 is a heat-resistant film, and the surface of the heat generating portion is the same as the film. The insulating glass layer (hereinafter also simply referred to as a glass layer) that protects against direct sliding contact wear of the nip portion where the surface of the pressure roller is pressed against the heating roller side and the transfer material is sandwiched by being in close contact with the partner (W) (Hereinafter simply referred to as nip).
【0004】すなわち、トナーを定着するのに十分な表
面温度に昇温されたニップ部に、転写材を送り込みつ
つ、同部でトナー画像を加熱・加圧して定着する。この
ように熱源をセラミックヒーターとし、同ヒーターを転
写材に近い位置に配置する。この方式は、熱源から空間
を経て加熱ローラ表面を昇温させる従来からのハロゲン
ランプ方式に比べ、発熱体の熱容量を極めて小さくする
ことができる。したがって消費電力が節減できる。また
ヒーターと定着部が接近しているために昇温が迅速であ
り、従来方式のように待ち時間を無くすための発熱部の
予熱が要らず、いわゆるクイックスタート性に優れてい
る。That is, while a transfer material is fed into a nip portion heated to a surface temperature sufficient to fix toner, a toner image is heated and pressed there to fix the toner image. As described above, the heat source is a ceramic heater, and the heater is arranged at a position close to the transfer material. In this method, the heat capacity of the heating element can be extremely reduced as compared with a conventional halogen lamp method in which the surface of a heating roller is heated from a heat source through a space. Therefore, power consumption can be reduced. In addition, since the heater and the fixing unit are close to each other, the temperature rises quickly, and there is no need to preheat the heat-generating unit to eliminate a waiting time unlike the conventional method, so that the so-called quick start property is excellent.
【0005】さらに、最近市場では定着作業のより高速
化、より高い定着品質、定着装置のより安定な稼働への
要求が日増しに強くなってきている。中でも定着作業高
速化への要求は、定着品質とも絡みセラミックヒーター
およびその周辺部への熱サイクル負担を大きくするもの
である。現状の定着装置では、そのセラミックヒーター
の基板は、アルミナ系セラミックスからなり、その通常
の定着速度は4ないし8ppmである(例えば4ppm
とは4 Paper Per Minuteの略称、す
なわち1分間にA4サイズの転写材を4枚送り込み、定
着できる速度である)。これをさらに12ppm以上に
高速化する要求がある。上記したこの方式の省エネルギ
ーとクイックスタート性を活かしつつ、この要求に応え
るためには、セラミックヒーター自体およびその周辺の
定着部の構造を抜本的に見直す必要がある。例えばアル
ミナ系セラミックスを基板に用いる現在のヒーターで
は、基板の熱伝導性・耐熱衝撃性で追随できず、高速化
による急速昇温に耐えられない、安定した定着画像が得
られない等々の障害が生じる。このため基板素材の見直
しが必要である。またこのような基板の性能を見直した
としても、例えばその熱伝導性を高めると、かえってそ
の周辺への放熱量が大きくなり省エネルギーとはならな
い場合もあり、周辺部の断熱構造をも見直す必要があ
る。以上のニーズに応えるため、本発明者等は、例えば
特願平8−285096号等に記載のように、高熱伝導
性のセラミックスを基板にし、その周辺の熱のロスを低
減した定着部の構造を既に提案した。これによって高速
定着作業時の急速昇温や迅速均熱化の課題については、
ある程度克服できることが分かった。In recent years, demands for faster fixing operation, higher fixing quality, and more stable operation of the fixing device have been increasing daily in the market. Above all, the demand for high-speed fixing work is related to the fixing quality, which increases the heat cycle load on the ceramic heater and its peripheral parts. In the current fixing device, the substrate of the ceramic heater is made of alumina ceramics, and its normal fixing speed is 4 to 8 ppm (for example, 4 ppm).
Is an abbreviation of 4 Paper Per Minute, that is, a speed at which four A4-size transfer materials can be fed and fixed per minute.) There is a demand to further increase the speed to 12 ppm or more. In order to respond to this requirement while making use of the energy saving and quick start characteristics of the above-described method, it is necessary to reexamine the structure of the ceramic heater itself and the structure of the fixing unit around the ceramic heater itself. For example, current heaters that use alumina-based ceramics for substrates cannot follow the thermal conductivity and thermal shock resistance of the substrate, cannot withstand rapid temperature rise due to high speed, and cannot provide stable fixed images. Occurs. Therefore, it is necessary to review the substrate material. Even if the performance of such a substrate is reviewed, for example, if the thermal conductivity is increased, the amount of heat released to the surrounding area may be increased and energy saving may not be achieved, and it is necessary to review the heat insulation structure in the surrounding area is there. In order to meet the above-mentioned needs, the present inventors have proposed a structure of a fixing unit in which a ceramic having high thermal conductivity is used as a substrate and heat loss around the ceramic is reduced as described in Japanese Patent Application No. 8-285096. Have already proposed. As a result, with regard to the issues of rapid temperature rise and
It turns out that it can be overcome to some extent.
【0006】しかしながら、一方オフィス等での定着作
業では転写材のサイズにバリエーションがあるために、
以下に述べるような不具合が生じることがある。オフィ
スでの転写材サイズは、通常はA4がメインとなるが実
際には、例えばA3サイズの大きなものから葉書サイズ
の小さなものまであり、定着部の均熱帯の幅は通常A3
サイズに合わせ、対応するセラミックヒーターの発熱部
の長さもほぼ300mm程度に設定してある。したがっ
てこれに見合ったA3サイズ程度の転写材を定着する場
合には、熱が転写材によってほぼ均等に奪われるため
に、ニップ部の均熱性もほぼ一定に保たれる。しかしな
がら同じ長さの均熱帯を有する定着部に、例えば葉書サ
イズで多数枚の転写材を定着し続けると、転写材に熱を
奪われない定着部が生じ、その部分では温度がより高く
なる、いわゆる異常昇温部が生じる。この状況を説明す
る図が図2である。同図は図1の定着部を転写材を送り
込む方向から見たものである。1から4の番号で指し示
された部分は図1と同じである。5は例えば葉書や封筒
のような幅の小さな転写材である。耐熱フィルム3と加
圧ローラ4は図の左端の矢印方向に同期回転しており、
転写材5は手前から奥の方向に向かって送り込まれる。
点線で分割した6の部分は転写材の通る部分(以下通紙
部と言う)であり、7および8は加圧ローラ上の転写材
の通過しない部分(以下非通紙部とも言う)である。この
通紙部の位置で多数枚の定着を続けると、非通紙部の温
度は時間とともに上昇する。However, in a fixing operation in an office or the like, the size of the transfer material varies, so that
The following problems may occur. Usually, the size of the transfer material in the office is mainly A4, but in practice, for example, the size is large from A3 size to small postcard size.
According to the size, the length of the heat generating portion of the corresponding ceramic heater is also set to about 300 mm. Therefore, when fixing a transfer material of about A3 size corresponding to this, since the heat is almost uniformly removed by the transfer material, the heat uniformity of the nip portion is also kept almost constant. However, if a large number of transfer materials are continuously fixed to a fixing portion having the same length, for example, in a postcard size, a fixing portion in which the transfer material is not deprived of heat occurs, and the temperature is higher in that portion. A so-called abnormal heating section occurs. FIG. 2 illustrates this situation. FIG. 3 is a view of the fixing unit in FIG. 1 viewed from a direction in which the transfer material is fed. The parts indicated by the numbers 1 to 4 are the same as those in FIG. Reference numeral 5 denotes a transfer material having a small width such as a postcard or an envelope. The heat-resistant film 3 and the pressure roller 4 rotate synchronously in the direction of the arrow at the left end of the figure.
The transfer material 5 is sent from the near side to the far side.
The portion 6 divided by the dotted line is a portion through which the transfer material passes (hereinafter, referred to as a paper passing portion), and the portions 7 and 8 are portions through which the transfer material does not pass over the pressure roller (hereinafter, also referred to as a non-paper passing portion). . If the fixing of a large number of sheets is continued at the position of the sheet passing portion, the temperature of the non-sheet passing portion increases with time.
【0007】このような状況が続くと、非通紙部の異常
昇温により、これに対応する位置のゴム製の加圧ローラ
表面部が変形して、通紙部と非通紙部とで転写材の搬送
速度が変わったり、非通紙部に対応するヒーター基板表
面が通紙部に対応する同基板面に比べ異常昇温したりす
る。したがって、再度幅の大きな転写材の定着作業に入
ると、通紙した転写材の端寄りで皺が生じたり、高温オ
フセット現象による定着不良が生じたりする。またセラ
ミックヒーターを固定している樹脂製の支持体が軟化し
たり、一部溶融状態となることもある。そのため特開平
6−149099号公報には、ヒーター基板上に複数本
の発熱パターンを形成し、その長さを転写材の幅に対応
させて変える方法が開示されている。また特開平8−3
05188号公報には、幅の小さな転写材を通紙する場
合、同材の送り込みを遅らせる方法が開示されている。If such a situation continues, the surface of the rubber pressure roller at the corresponding position is deformed due to abnormal temperature rise of the non-paper passing portion, and the paper passing portion and the non-paper passing portion are deformed. The transfer speed of the transfer material changes, or the surface of the heater substrate corresponding to the non-sheet passing portion rises abnormally in temperature compared to the surface of the substrate corresponding to the sheet passing portion. Therefore, when the fixing operation of the transfer material having a large width is started again, wrinkles are generated near the edge of the transferred transfer material, or fixing failure due to the high-temperature offset phenomenon occurs. Further, the resin support to which the ceramic heater is fixed may be softened or partially melted. For this reason, Japanese Patent Application Laid-Open No. 6-149099 discloses a method in which a plurality of heat generating patterns are formed on a heater substrate and the length thereof is changed according to the width of the transfer material. Also, JP-A-8-3
Japanese Patent Laid-Open No. 05188 discloses a method of delaying the feeding of a transfer material having a small width when the transfer material is passed.
【0008】[0008]
【発明が解決しようとする課題】しかしながら、上記の
特開平6−149099号公報に記載の方法では、定着
対象の転写材のサイズバリエーションを拡げようとする
と、ヒーター基板の短手方向の長さ(すなわち図2の奥
行き方向の長さ)を大きくせざるを得なくなる。それ故
本方式の利点であるクイックスタート性能が損なわれる
結果となる。また基板サイズが大きくなるため、基板が
急激な昇降温による熱衝撃に耐えられなくなる恐れがあ
る。また特開平8−305188号公報に記載の方法で
は、小さいサイズの転写材の定着速度が遅くなり、定着
の作業効率が低下することが避けられない。However, according to the method described in Japanese Patent Application Laid-Open No. 6-149099, if the size variation of the transfer material to be fixed is to be increased, the length of the heater substrate in the width direction ( That is, the length in the depth direction of FIG. 2) must be increased. Therefore, the quick start performance, which is an advantage of the present method, is impaired. In addition, since the size of the substrate is increased, the substrate may not be able to withstand thermal shock due to rapid temperature rise and fall. Further, in the method described in JP-A-8-305188, it is inevitable that the fixing speed of the transfer material having a small size becomes slow and the work efficiency of the fixing decreases.
【0009】そこで本発明者等は、既に特願平9−34
7760号および特願平9−347761号において、
セラミック基板の表面上に高熱伝導性物質を含む熱バイ
パス(通称ヒートスプレッダーと言う。なお本発明で
は、以下これを単にバイパスとも略称する。)を設けた
セラミックヒーターを組み込んだ加熱定着装置を提案し
た。これによって上記した大きな転写材の皺の発生、高
温オフセット現象による定着不良、樹脂製支持体の軟化
等の不具合が、かなり解消されることが分かった。同出
願では熱バイパス(またはヒートスプレッダー)を構成す
る高熱伝導性物質として、銅・アルミニウム、モリブデ
ン、タングステンを主成分とする金属またはそれらの合
金や高熱伝導性のセラミックス等が例示されている。し
かしながら金属またはその合金でバイパスを形成する場
合、長時間使用すると昇温によって表面が酸化され易
く、その最表面に耐酸化性の層を被覆する必要がある。
また高熱伝導性のセラミックスでバイパスを形成する場
合、例えばヒーター基板に比較的熱伝導性の良いセラミ
ックスを用いると、上記課題を解消する大きな効果が期
待できないこともある。したがって、この様な諸々の問
題を解消するにためには、より高熱伝導性のバイパスの
配置が必要となる。本発明の課題は、本定着方式の省エ
ネルギー・クイックスタート性を活かしつつ、この点を
解決できるバイパス構造を提供することである。Therefore, the present inventors have already filed Japanese Patent Application No. 9-34.
No. 7760 and Japanese Patent Application No. 9-347761,
A heat fixing device incorporating a ceramic heater provided with a thermal bypass (commonly referred to as a heat spreader, which is also simply referred to as a bypass in the present invention) including a highly thermally conductive substance on the surface of a ceramic substrate has been proposed. . As a result, it was found that the above-described problems such as the generation of wrinkles of the large transfer material, the poor fixing due to the high-temperature offset phenomenon, and the softening of the resin support were considerably eliminated. In this application, as a high thermal conductive material constituting a thermal bypass (or a heat spreader), a metal containing copper / aluminum, molybdenum, tungsten as a main component, an alloy thereof, a high thermal conductive ceramic, and the like are exemplified. However, when a bypass is formed with a metal or an alloy thereof, the surface is liable to be oxidized by a rise in temperature when used for a long time, and it is necessary to cover the outermost surface with an oxidation-resistant layer.
Further, when a bypass is formed of ceramics having high thermal conductivity, for example, if ceramics having relatively high thermal conductivity is used for the heater substrate, a great effect of solving the above problem may not be expected. Therefore, in order to solve such various problems, it is necessary to arrange a bypass having higher thermal conductivity. An object of the present invention is to provide a bypass structure that can solve this problem while making use of the energy saving and quick start properties of the fixing system.
【0010】[0010]
【課題を解決するための手段】上記課題を解決するた
め、本発明が提供する加熱定着装置は、その定着部のヒ
ーター基板を電気絶縁性セラミックス製とし、同基板上
の発熱部周辺に高熱伝導性物質であるダイヤモンドを含
む熱バイパスを配設したものである。すなわち本発明の
加熱定着装置は、加熱ローラ上に配設され、電気絶縁性
セラミックスからなる基板上に発熱部を付与したセラミ
ックヒーターと、これに摺接して回転する耐熱性フィル
ムと、同フィルムに摺接し圧力を加えつつ回転する加圧
ローラとを備え、同加圧ローラによる加圧と耐熱フィル
ムを介した上記セラミックヒーターによる加熱とによっ
て、耐熱フィルムと加圧ローラとの間に挟まれて移動す
る転写材の表面に形成されたトナー画像を定着させる加
熱定着装置であって、上記セラミックヒーターの表面上
に高熱電導性物質であるダイヤモンドを含む熱バイパス
が設けられた加熱定着装置である。In order to solve the above-mentioned problems, a heating and fixing apparatus provided by the present invention comprises a heater substrate of a fixing portion made of an electrically insulating ceramic and having a high heat conduction around a heating portion on the substrate. A thermal bypass including diamond, which is a conductive substance, is provided. That is, the heat fixing device of the present invention is provided on a heating roller, a ceramic heater provided with a heat generating portion on a substrate made of electrically insulating ceramics, a heat-resistant film that rotates in sliding contact with the ceramic heater, A pressure roller that slides and rotates while applying pressure, and is moved between the heat-resistant film and the pressure roller by pressing by the pressure roller and heating by the ceramic heater via the heat-resistant film. A heat fixing device for fixing a toner image formed on a surface of a transfer material to be formed, wherein a heat bypass including diamond which is a high thermal conductive material is provided on the surface of the ceramic heater.
【0011】また本発明の加熱定着装置には、上記の基
本構造であり、耐熱フィルムと基板との摺接面と反対側
の基板上に発熱部が形成されているヒーター構造(以下
背面型とも言う)のものも含まれる。Further, the heat fixing device of the present invention has a heater structure having the above-mentioned basic structure, in which a heat generating portion is formed on a substrate on a side opposite to a sliding contact surface between the heat-resistant film and the substrate (hereinafter also referred to as a rear type). ) Is also included.
【0012】なお本発明の熱バイパスの一配設形式によ
れば、(1)セラミック基板の少なくとも一面のほぼ全面
にわたって配設されているものがある。また(2)セラミ
ック基板の少なくとも一面に配設されており、同面内で
発熱部にほぼ対応した位置に部分配設されているものが
ある。またさらに(3)耐熱フィルムと摺接する基板の面
に配設されているものがある。また(4)電気絶縁性セラ
ミック基板の好ましい材質として窒化アルミニウム系セ
ラミックスを用いたものがある。According to one arrangement of the thermal bypass of the present invention, (1) there is an arrangement in which at least one surface of the ceramic substrate is disposed substantially over the entire surface. (2) Some of the ceramic substrates are arranged on at least one surface of the ceramic substrate, and are partially distributed in the same surface at positions substantially corresponding to the heat generating portions. Still further, (3) there is one provided on the surface of the substrate which is in sliding contact with the heat-resistant film. (4) As a preferable material of the electrically insulating ceramic substrate, there is one using aluminum nitride ceramics.
【0013】[0013]
【発明の実施の形態】本発明で問題となる非通紙部での
異常昇温は、セラミック基板およびその周辺部の熱容量
が小さく、ヒーターから供給され非通紙部に貯まった熱
を通紙部に十分伝えることができないことによって生じ
る。すなわち基板自体の熱容量が小さいことと、ヒータ
ーを固定する支持体や加圧ローラは、ゴムや樹脂からな
るために非通紙部・通紙部間の熱移動が促進されないこ
とよる。これを解消するため、本発明では非通紙部と通
紙部との間に、それらを繋ぐダイヤモンドを含む熱バイ
パスをセラミック基板上に設ける。同バイパスの形成箇
所は、非通紙部と通紙部の双方が形成されるセラミック
基板の対応部分を熱的に繋ぐように配設する。これによ
って非通紙部から通紙部間の熱の移動量を大きくするこ
とができ、非通紙部の温度を下げることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The abnormal temperature rise in the non-sheet passing portion, which is a problem in the present invention, is caused by the fact that the heat capacity of the ceramic substrate and its peripheral portion is small, and the heat supplied from the heater and accumulated in the non-sheet passing portion. It is caused by the inability to sufficiently inform the department. That is, the heat capacity of the substrate itself is small, and since the support and the pressure roller for fixing the heater are made of rubber or resin, heat transfer between the non-sheet passing portion and the sheet passing portion is not promoted. In order to solve this, in the present invention, a thermal bypass including diamond connecting them between the non-sheet passing portion and the sheet passing portion is provided on the ceramic substrate. The location where the bypass is formed is disposed so as to thermally connect corresponding portions of the ceramic substrate on which both the non-sheet passing portion and the sheet passing portion are formed. This makes it possible to increase the amount of heat transfer from the non-sheet passing portion to the sheet passing portion, thereby lowering the temperature of the non-sheet passing portion.
【0014】以下本発明の加熱定着装置を詳細に説明す
る。図3は、本発明の加熱定着装置に用いられるセラミ
ックスヒーターの一つの基本構造を模式的に描いたもの
である。同図に示すように、電気絶縁性セラミックスか
らなる基板11上に設けられた抵抗発熱部12に、これ
と電気的に接続された通電電極13から通電を行う。こ
の場合発熱部形成面を加圧ローラ側に向けてヒーターを
支持体に固定する(以下この固定方式を正面型とも言
う)。したがって、この場合基板の発熱部形成面上に
は、加圧ローラ側からの圧力が負荷され、耐熱フィルム
が同面に摺接しつつ移動する。したがって同フィルムの
摺接移動による発熱部の摩耗を防ぐために、発熱部の表
面には絶縁性ガラスの層14が被覆されている。図3の
aは発熱部上面から見たものであり、実際には発熱部1
2は、絶縁性ガラス層14によって覆われている。図3
のbはそのA−A´断面である。Hereinafter, the heat fixing device of the present invention will be described in detail. FIG. 3 schematically illustrates one basic structure of a ceramic heater used in the heat fixing device of the present invention. As shown in FIG. 1, a current is supplied to a resistance heating portion 12 provided on a substrate 11 made of electrically insulating ceramics from a current supply electrode 13 electrically connected to the resistance heating portion 12. In this case, the heater is fixed to the support with the heat generating portion forming surface facing the pressure roller side (this fixing method is also referred to as a front type). Therefore, in this case, a pressure from the pressure roller side is applied to the heat generating portion forming surface of the substrate, and the heat resistant film moves while sliding on the same surface. Therefore, the surface of the heat generating portion is covered with an insulating glass layer 14 in order to prevent the heat generating portion from being worn by sliding movement of the film. FIG. 3A is a view from the top of the heat generating portion, and actually, the heat generating portion 1 is shown.
2 is covered by the insulating glass layer 14. FIG.
B is its AA 'cross section.
【0015】また本発明の定着装置においては、支持体
へのセラミックヒーターの取り付け方向は、通常図1a
に記載のように正面型に設定される。しかしながら、こ
れとは表裏逆の方向にすることもできる。この場合発熱
部形成面は加圧ローラとは反対側になる(すなわち前記
の背面型)。耐熱フィルムとは摺接しない。したがって
例えば発熱部の絶縁性ガラス層による被覆は無くても良
い。図4のaは正面型であり、bは背面型である。なお
同図の符号は図1〜図3に準ずる。In the fixing device of the present invention, the mounting direction of the ceramic heater to the support is generally the same as that shown in FIG.
Is set to the front type as described in. However, the direction can be reversed. In this case, the heat generating portion forming surface is on the opposite side to the pressure roller (that is, the above-mentioned back type). No sliding contact with heat-resistant film. Therefore, for example, the heating portion may not be covered with the insulating glass layer. 4A is a front type, and b is a back type. Note that the reference numerals in FIG.
【0016】本発明の加熱定着装置によれば、以上の基
本構造において電気絶縁性セラミックスからなる基板の
面に、ダイヤモンドを含む熱バイパスを基板面に接合等
の手段によって熱的に接続配設し、これによって基板か
らの放熱を円滑にし、非通紙部が形成される連続定着作
業後の定着時でも、非通紙部の異常加熱による前述の不
具合を未然に防止することができる。ダイヤモンドは純
粋なもので、その熱伝導率が1000W/m・K以上で
あり、極めて優れた放熱性が期待できる。また熱膨張係
数が2.3×10ー 6/℃程度と小さいために、セラミック
基板とのその整合性に優れている。熱バイパスを構成す
るダイヤモンドを含む材料の組成ならびにその組織・構
造については、上記した非通紙部の異常過熱を回避でき
る程度に放熱効果が期待できる物であれば、如何なるも
のでも良い。バイパスの放熱性を確保するため、バイパ
ス中の純ダイヤモンドの量は少なくとも50体積%以
上、好ましくは70体積%以上、さらには100体積%
すなわち単相であることが望ましい。またその熱伝導性
が享受できれば、硼素(B)、燐(P)、窒素(N)等の従成
分を1重量%までの範囲で含ませてもよい(以下本発明
では、このように従成分を含んだバイパス中のダイヤモ
ンド相をダイヤモンド組成物とも言う)。According to the heat fixing apparatus of the present invention, in the above basic structure, a thermal bypass including diamond is thermally connected to the surface of the substrate made of electrically insulating ceramic by bonding or the like to the substrate surface. Thus, the heat radiation from the substrate can be made smooth, and the above-mentioned problem caused by abnormal heating of the non-sheet passing portion can be prevented even at the time of fixing after the continuous fixing operation in which the non-sheet passing portion is formed. Diamond is pure, has a thermal conductivity of 1000 W / m · K or more, and can be expected to have extremely excellent heat dissipation. Also in the thermal expansion coefficient is small as about 2.3 × 10 over 6 / ° C., is excellent in its compatibility with the ceramic substrate. Regarding the composition of the material containing diamond constituting the thermal bypass and the structure and structure thereof, any material may be used as long as a heat radiation effect can be expected to the extent that the above-described abnormal overheating of the non-paper passing portion can be avoided. In order to ensure the heat dissipation of the bypass, the amount of pure diamond in the bypass is at least 50% by volume or more, preferably 70% by volume or more, and more preferably 100% by volume.
That is, a single phase is desirable. If the thermal conductivity can be enjoyed, minor components such as boron (B), phosphorus (P), and nitrogen (N) may be contained in a range of up to 1% by weight (hereinafter, in the present invention, such components are used). The diamond phase in the bypass containing the component is also called a diamond composition).
【0017】バイパス中のダイヤモンドまたはダイヤモ
ンド組成物の組織・構造の形態には、(1)単一物の形態
または(2)他の物質と複合化された形態のいずれかの形
態となる。(1)の場合には、通常膜状に種々のマクロパ
ターンで形成される。しかしながら、ダイヤモンドまた
はダイヤモンド組成物は高価であり、経済的には(2)の
ように、バイパス中のこれらの量を必要最低限に抑える
のが望ましい。(2)の場合には通常ダイヤモンドまたは
ダイヤモンド組成物をマトリックスとし、その隙間にこ
れと複合化する他の物質を共存させる。他の物質は熱バ
イパスの機能を十分発揮させるためには、熱伝導性のも
のであるのが好ましい。ダイヤモンドまたはダイヤモン
ド組成物をバイパス内に分布複合化させる場合、その個
々の分布単位は粒子状・繊維状等いずれの形状でも構わ
ないが、それらの個々が互いに三次元的に連結した構造
であるのが望ましい。また連結部分は他の物質で繋がっ
ていてもよいが、この場合にも他の物質は熱バイパスの
機能を十分発揮させるためには、熱伝導性のものである
のが好ましい。なお熱伝導性の物質には主成分が窒化ア
ルミニウム(AlN、熱伝導率が150W/m・K以上、
熱膨張係数が4.2×10ー 6/℃程度)、窒化珪素(Si3
N4、熱伝導率が50W/m・K以上、熱膨張係数が3.
0×10ー 6/℃程度)、窒化硼素(BN、熱伝導率が20
0W/m・K以上、熱膨張係数が3.5×10ー 6/℃程
度)、炭化珪素(SiC、熱伝導率が200W/m・K以
上、熱膨張係数が3.5×10ー 6/℃程度)等々の高熱電
導性セラミックス、タングステン(W、熱伝導率が170
W/m・K程度、熱膨張係数が4.3×10ー 6/℃程度)、
モリブデン(Mo、熱伝導率が140W/m・K程度、熱
膨張係数が4.9×10ー 6/℃程度)、ニッケル(Ni、熱
伝導率が90W/m・K程度、熱膨張係数が13.3×1
0ー 6/℃程度)、等々の高融点金属若しくは銀(Ag、熱
伝導率が420W/m・K程度、熱膨張係数が19.7×
10ー 6/℃程度)、白金(Pt、熱伝導率が70W/m・K
程度、熱膨張係数が8.9×10ー 6/℃程度)等々の貴金
属や銅(Cu、熱伝導率が400W/m・K程度、熱膨張
係数が17×10ー 6/℃程度)等の金属と以上述べた金属
の合金・複合物および以上のセラミックスや金属等の各
種物質を適宜複合化させた物・同各種物質を分散させた
樹脂等が考えられる。The texture or structure of the diamond or diamond composition being bypassed may be either (1) a single substance or (2) a composite with another substance. In the case of (1), it is usually formed in a film shape with various macro patterns. However, diamonds or diamond compositions are expensive, and it is economically desirable to minimize these amounts during bypass, as in (2). In the case of (2), usually a diamond or a diamond composition is used as a matrix, and another substance to be combined with the matrix is made to coexist in the gap. Other substances are preferably thermally conductive in order to sufficiently exhibit the function of the thermal bypass. When diamond or a diamond composition is distributed and compounded in the bypass, the individual distribution units may be in any shape such as particulate or fibrous, but the individual units are three-dimensionally connected to each other. Is desirable. In addition, the connecting portions may be connected by another substance, but in this case also, the other substance is preferably thermally conductive in order to sufficiently exhibit the function of the thermal bypass. The main component of the thermally conductive substance is aluminum nitride (AlN, the thermal conductivity is 150 W / m · K or more,
About thermal expansion coefficient of 4.2 × 10 over 6 / ° C.), silicon nitride (Si 3
N 4 , thermal conductivity of 50 W / m · K or more, thermal expansion coefficient of 3.
0 × 10 over 6 / ° C. approximately), boron nitride (BN, thermal conductivity 20
0 W / m · K or more, the thermal expansion coefficient of 3.5 × 10 -6 / ° C. approximately), silicon carbide (SiC, thermal conductivity of 200 W / m · K or more, the thermal expansion coefficient of 3.5 × 10 -6 / ° C), high thermal conductive ceramics, tungsten (W, thermal conductivity 170
W / m · K or so, the thermal expansion coefficient of about 4.3 × 10 over 6 / ° C.),
Molybdenum (Mo, thermal conductivity of 140 W / m · K or so, the thermal expansion coefficient of about 4.9 × 10 over 6 / ° C.), nickel (Ni, the thermal conductivity of 90W / m · K or so, the thermal expansion coefficient 13.3 × 1
0 over 6 / ° C. approximately), a refractory metal or silver, etc. (Ag, thermal conductivity of 420 W / m · K or so, the thermal expansion coefficient of 19.7 ×
10 @ 6 / ° C. approximately), platinum (Pt, thermal conductivity of 70 W / m · K
Extent, the thermal expansion coefficient of 8.9 × 10 over 6 / ° C. C.), etc. of the precious metals and copper (Cu, the thermal conductivity of 400W / m · K or so, the thermal expansion coefficient of 17 × 10 over 6 / ° C. approximately), etc. An alloy / composite of the above-mentioned metal and the above-mentioned metals, a product obtained by appropriately combining various materials such as the above-mentioned ceramics and metals, and a resin in which the various materials are dispersed are conceivable.
【0018】本発明のダイヤモンドまたはダイヤモンド
組成物を含む熱バイパスのマクロな構造としては、バイ
パス本体を熱伝導性の上記各種物質とし、その一部をダ
イヤモンドまたはダイヤモンド組成物で構成することも
できる。これによって高価なダイヤモンドまたはダイヤ
モンド組成物の量を減らすことができ、バイパスのコス
トを下げることができる。この場合同本体の特にセラミ
ック基板との接触部分には、その放熱効果を有効に利用
するため必ずダイヤモンドまたはダイヤモンド組成物か
らなる部分を配置する必要がある。またバイパス全体か
ら見た本体上でのこれらの配置パターンは種々考えられ
るが、放熱方向と放熱効率を考慮し、また周辺パーツへ
の熱的な作用も十分配慮して、最適なものとする必要が
ある。As a macro structure of the thermal bypass containing the diamond or the diamond composition of the present invention, the bypass main body may be made of the above-mentioned various materials having thermal conductivity, and a part thereof may be composed of the diamond or the diamond composition. This can reduce the amount of expensive diamond or diamond composition and reduce the cost of bypass. In this case, it is necessary to arrange a portion made of diamond or a diamond composition without fail in order to effectively utilize the heat radiation effect of the main body, especially at the contact portion with the ceramic substrate. Also, there are various possible arrangement patterns on the main body as viewed from the entire bypass, but it is necessary to consider the heat radiation direction and heat dissipation efficiency, and also to consider the thermal action on the surrounding parts enough to optimize it There is.
【0019】本発明のダイヤモンドを含む熱バイパスと
セラミック基板との接続方式は、本発明の前記目的を達
成できる方式であれば、如何なる方式でもよいが、通常
は接触・密着・接合のいずれかの方式を採る。ここで本
発明での接触とは、基板の面にバイパスの少なくとも一
部が接している状態、密着とは、基板の面にバイパスの
少なくとも一部が容易に剥がれる程度に着いている状
態、接合とは、基板の面にバイパスの少なくとも一部が
化学的または物理的に容易に剥がれない程度に固定され
ている状態を示す。接合には双方の間に介在層を配して
もよいが、その場合には同層は熱伝達を妨げないものを
用いる。The connection method between the thermal bypass containing diamond of the present invention and the ceramic substrate may be any method as long as the above-mentioned object of the present invention can be achieved. Take the method. Here, the contact in the present invention refers to a state in which at least a part of the bypass is in contact with the surface of the substrate, and a close contact refers to a state in which at least a part of the bypass is easily peeled off on the surface of the substrate, The term "indicates a state in which at least a part of the bypass is fixed to the surface of the substrate to such an extent that the bypass is not easily removed chemically or physically. An intervening layer may be provided between the two layers for joining, but in this case, the same layer should not interfere with heat transfer.
【0020】ダイヤモンドやダイヤモンド組成物の単一
物を用いる場合には、その熱膨張係数が2.3×10ー 6/
℃と低いため、比較的熱膨張係数の低いセラミック基板
との整合性が良く、両者の同係数差で接触不良が生じ熱
伝達性が損なわれる恐れは殆ど無く、またダイヤモンド
やダイヤモンド組成物をバルクとして接触・密着させて
用いることは不経済でもあり、通常は基板上に所定の面
パターンで成膜し接合して用いる。[0020] When using a single of diamond or diamond composition, its thermal expansion coefficient of 2.3 × 10 -6 /
Because of the low temperature of ℃, good matching with ceramic substrate with relatively low coefficient of thermal expansion is good, there is almost no risk of contact failure due to the same coefficient difference and heat transferability is impaired. It is uneconomical to use them in contact and close contact with each other. Usually, they are formed into a film on a substrate in a predetermined surface pattern and then joined.
【0021】しかしながら上記のように他の物質と複合
化されたものをバイパスとして利用する場合には、バイ
パス・基板双方の熱膨張係数の差によって熱的な接続に
支障を来さない方式を適宜選ぶ。ヒーターのセラミック
ス基板とバイパス双方の熱膨張係数差が大きい場合、す
なわち接合すると実用時に生じる熱応力が、双方の剥離
またはセラミック基板が損傷する程大きくなる場合(例
えばバイパス本体に上記した熱膨張係数の大きい金属や
樹脂等を複合化の相手材として選ぶ場合)には、基板面
に同バイパスを接触または密着によって接続させる。ま
た双方の熱膨張係数の差が比較的小さい場合(例えばバ
イパス本体に上記した熱膨張係数の小さい金属・セラミ
ックス等を複合化の相手材として選ぶ場合)には、同熱
応力がそれほど大きならない場合には密着または接合に
よって接続させる。However, in the case where a material compounded with another substance is used as a bypass as described above, a method that does not hinder thermal connection due to a difference in thermal expansion coefficient between both the bypass and the substrate is appropriately adopted. Choose. When the difference between the thermal expansion coefficients of the ceramic substrate and the bypass of the heater is large, that is, when the thermal stress generated in practical use when joining is large enough to peel off or damage the ceramic substrate (for example, the above-mentioned thermal expansion coefficient of the bypass body is large). When a large metal or resin is selected as a mating partner, the bypass is connected to the substrate surface by contact or close contact. When the difference between the two thermal expansion coefficients is relatively small (for example, when the above-mentioned metal / ceramic having a small thermal expansion coefficient is selected as a mating material for the bypass body), when the same thermal stress is not so large. Are connected by close contact or bonding.
【0022】接触によってバイパスを熱的に接続する場
合には、バイパスの一部を基板の外方スペースに延長す
ることもありうる。またダイヤモンドを含むバイパス自
体が、それを構成するダイヤモンド以外のマトリックス
成分によって柔軟性を持たせることができれば(例えば
熱伝導性物質を入れた電気絶縁性樹脂をマトリックスに
用いる、また例えば比較的ばね性のある金属マトリック
スを用いる等々)、物理的にほぼその全面を基板面に密
着させたり、接触させたりする方法が種々考えられる。
なおダイヤモンドを含み複合化されたバイパスとする
際、熱の移動量を大きくするためには、可能な限りコン
パクトなサイズでバルク状で形成するのが望ましい。When the bypass is thermally connected by contact, a part of the bypass may be extended to a space outside the substrate. In addition, if the bypass itself containing diamond can be made flexible by a matrix component other than diamond constituting it (for example, using an electrically insulating resin containing a thermally conductive material for the matrix, There are various methods for physically bringing the entire surface into close contact with or in contact with the substrate surface.
When a composite bypass containing diamond is used, in order to increase the amount of heat transfer, it is desirable to form the bulk as compact as possible.
【0023】高熱伝導性物質からなるバイパスの配設位
置としては、基板のいずれの表面であってもよく、また
一面だけでなく複数の面にも設けることができる。この
場合表面のほぼ全面にわたって配設されるのが好まし
い。選ばれた面の一部ではなくほぼ全面にわたって形成
されることによって、非通紙部に貯まった熱がセラミッ
ク基板の広い部分に伝わるため、非通紙部の温度を低下
させる効果が大きくなるからである。配設パターンは、
一つの面内での上面から見てほぼ全面をカバーすれば、
如何なるパターンとしてもよく、またバイパス形状によ
り部分的に熱伝達方向の断面積を稼ごうとするならば、
その部分のバイパスの厚みを大きめにしたり、バイパス
の断面形状を適宜変形させたものとしてもよい。例えば
上面から見て常時通紙部となる部分に対応した位置に
は、上面から見て基板面の露呈したスリット部分や厚み
の薄い部分を設けるとか、断面の厚みを全体に薄くする
とか種々の工夫をする。また非通紙部に対応したバイパ
ス部分の放熱面積を大きくするために、その表面に凹凸
を付けたりすることも有効な手段となる。The bypass made of a high thermal conductive material may be provided on any surface of the substrate, and may be provided not only on one surface but also on a plurality of surfaces. In this case, it is preferable to be provided over almost the entire surface. Since the heat accumulated in the non-sheet passing portion is transmitted to a wide portion of the ceramic substrate by being formed over almost the entire surface, not a part of the selected surface, the effect of lowering the temperature of the non-sheet passing portion is increased. It is. The arrangement pattern is
If you cover almost the entire surface when viewed from the top in one plane,
Any pattern may be used, and if it is desired to partially increase the cross-sectional area in the heat transfer direction due to the bypass shape,
The thickness of the bypass in that portion may be increased, or the cross-sectional shape of the bypass may be appropriately modified. For example, at a position corresponding to a portion that is always a paper passing portion when viewed from above, a slit portion or a thin portion where the substrate surface is exposed when viewed from above is provided, or the thickness of the cross section is reduced as a whole. Be creative. In order to increase the heat radiation area of the bypass portion corresponding to the non-sheet passing portion, it is also effective to make the surface uneven.
【0024】図5にその配設例を模式的に示す。この例
では発熱部を形成した面と反対側の一面のほぼ全面にバ
イパスが設けられている。この場合、バイパスは基板の
長さ方向の側面の片方または両方のほぼ全面に形成して
もよいし、基板の長さ方向の片端または両端の側面全面
に形成してもよい。またはこれらのいくつかの位置を組
み合わせて配設してもよい。なお同図のaは発熱部の上
面から見た図、bはその裏面から見た図、cはaのAー
A´断面を示す図である。図で9は高熱伝導性物質を含
む熱伝導バイパスである。他の指示番号のものは、図1
ないし図4のそれに順ずる。このようにすることによっ
て、特に基板の発熱部から基板の厚み方向に伝わる熱を
効率的に除くことができる。FIG. 5 schematically shows an example of the arrangement. In this example, a bypass is provided on almost the entire surface on the opposite side to the surface on which the heat generating portion is formed. In this case, the bypass may be formed on almost all of one or both of the side surfaces in the longitudinal direction of the substrate, or may be formed on the entire side surface of one or both ends in the longitudinal direction of the substrate. Alternatively, some of these positions may be arranged in combination. In this figure, a is a view as viewed from the upper surface of the heat-generating portion, b is a view as viewed from the back thereof, and c is a diagram showing a cross section taken along line AA ′ of a. In the figure, reference numeral 9 denotes a heat conduction bypass including a highly heat-conductive substance. Those with other instruction numbers are shown in FIG.
4 or FIG. This makes it possible to efficiently remove heat transmitted from the heat generating portion of the substrate in the thickness direction of the substrate.
【0025】同バイパスを基板の発熱部に対応した位置
に配設してもよい。図6にはその一例として、発熱部に
対応した位置でなおかつそれを被覆したガラス層の上に
バイパスを配設したものを模式的に示す。この場合には
バイパスが基板の耐熱性フィルムとの摺接面上に配設さ
れることになる。また図7には発熱部の裏面に発熱部と
ほぼ同じ長さでバイパスを配設したものを模式的に示
す。なお両図の小区分a、b、c並びに各部の指示番号
は図5に準ずる。これらの場合発熱部にほぼ対応する位
置にバイパスが配置されれば、バイパスは基板の長さ方
向の側面の片方または両方に形成してもよいし、基板の
長さ方向の片端または両端の側面に形成してもよい。ま
たはこれらのいくつかの位置を組み合わせて配設しても
よい。なおバイパスには通常セラミック基板よりも熱伝
導率の高いものを用いるため、図7のようにバイパスを
裏面に形成すると、ヒーターの昇温時に優先的に裏面に
熱が流れ、表側の面にバイパスを形成する図6の場合に
比べ、定着のための定着面側の昇温が遅くなる傾向にあ
る。それ故クイックスタート性の観点から見ると、後者
のバイパス配置が好ましい。しかしながら本発明者等の
確認したところでは、図7の様な配置であっても本方式
のクイックスタート性を大きく損ねることはない。The bypass may be provided at a position corresponding to the heat generating portion of the substrate. FIG. 6 schematically shows an example in which a bypass is provided at a position corresponding to a heat generating portion and on a glass layer covering the heat generating portion. In this case, the bypass is provided on the sliding contact surface of the substrate with the heat-resistant film. FIG. 7 schematically shows an arrangement in which a bypass having the same length as that of the heat generating portion is provided on the back surface of the heat generating portion. Note that the subdivisions a, b, and c in both figures and the designation numbers of the respective parts are the same as in FIG. In these cases, if the bypass is disposed at a position substantially corresponding to the heat generating portion, the bypass may be formed on one or both of the side surfaces in the longitudinal direction of the substrate, or may be formed on one or both sides in the longitudinal direction of the substrate. May be formed. Alternatively, some of these positions may be arranged in combination. Since a bypass having a higher thermal conductivity than a ceramic substrate is usually used, if a bypass is formed on the back surface as shown in FIG. 7, heat flows preferentially to the back surface when the temperature of the heater rises, and the bypass flows to the front surface. 6, the temperature rise on the fixing surface side for fixing tends to be slower than in the case of FIG. Therefore, from the viewpoint of quick start, the latter bypass arrangement is preferable. However, it has been confirmed by the present inventors that even the arrangement as shown in FIG. 7 does not significantly impair the quick start property of this method.
【0026】なお基板の発熱部側にバイパスを配設する
際、特にバイパスが前記の複合化されたもので電導性で
あれば発熱部とバイパスの間を電気的に絶縁状態にしな
ければならない。図6ではそれらの間に電気絶縁性のガ
ラス層が形成されているが、基板の耐電圧レベルを考慮
して双方の間を何らかの形状で空ける、別の絶縁体を間
に挟む等々種々の方策がある。また図6の場合バイパス
が最表面に設けられると、耐熱フィルムがそれに直接摺
接することになるので、バイパス中のダイヤモンドまた
はダイヤモンド組成物部分が、同摺接面に露呈しておれ
ば、摺動による摩耗は殆ど問題にはならないが、そうで
なければ複合化する相手材に摩擦係数の低いセラミック
スを用いるか、またはバイパス全体またはその摺接表面
のみを耐熱フィルムとの摺動性に優れたものにしておく
必要がある。したがって例えば基板側から順に、発熱部
/ガラス層(または電気絶縁層)/バイパス/ガラス層(また
は良摺動性の電気絶縁層)のように積層することも考え
られる。なおこの場合電気絶縁層が同時に熱伝導性であ
れば、それに越したことはない。その候補としては、前
記した窒化アルミニウム(AlN)、窒化珪素(Si
3N4)、窒化硼素(BN)等々のセラミックス素材があ
る。しかしながらこのような場合、発熱部の上部を外し
た同じ面内、同面内から隣りの面にかけて、または図8
のように発熱部の形成されていない面内にバイパスを配
設すれば、この問題は生じない。勿論バイパスが絶縁性
かつ熱伝導性の素材、例えば窒化アルミニウム(Al
N)、窒化珪素(Si3N4)、窒化硼素(BN)等々のセラ
ミックスであれば、以上の対策は要らない。When a bypass is provided on the heat-generating portion side of the substrate, the heat-generating portion and the bypass must be electrically insulated, especially if the bypass is of the aforementioned composite type and is conductive. In FIG. 6, an electrically insulating glass layer is formed between them, but various measures are taken, such as leaving some space between them in consideration of the withstand voltage level of the substrate, or sandwiching another insulator between them. There is. In the case of FIG. 6, when the bypass is provided on the outermost surface, the heat-resistant film comes into direct sliding contact with the outermost surface. Therefore, if the diamond or the diamond composition portion in the bypass is exposed on the sliding contact surface, the sliding is performed. The wear caused by the material is not a problem, but if not, use ceramics with a low coefficient of friction as the mating material, or use the entire bypass or only its sliding contact surface with excellent sliding properties with the heat-resistant film. It is necessary to keep. Therefore, for example, in order from the substrate side,
It is also conceivable to laminate such as: / glass layer (or electric insulating layer) / bypass / glass layer (or good slidable electric insulating layer). In this case, if the electric insulating layer is also thermally conductive at the same time, nothing goes beyond that. The candidates are aluminum nitride (AlN), silicon nitride (Si
3 N 4), there are so ceramics materials boron nitride (BN). However, in such a case, in the same plane from which the upper portion of the heat generating portion is removed, from the same plane to the adjacent plane, or FIG.
This problem does not occur if the bypass is provided in a plane where the heat generating portion is not formed as in the above. Of course, the bypass is made of an insulating and thermally conductive material such as aluminum nitride (Al
N), silicon nitride (Si 3 N 4 ), boron nitride (BN), and other ceramics do not require the above measures.
【0027】図6の発熱部が耐熱フィルム側に無い背面
型の場合も基本的には同様の構造を適用できるが、バイ
パスを発熱部の裏面すなわち耐熱フィルムとの摺接面側
に設ける場合には、上記同様バイパス全体またはその摺
接表面のみを耐熱フィルムとの摺動性に優れたものにし
ておく必要がある。バイパスを発熱部側に設ける場合に
は、耐熱フィルムとの摺動が無いので、バイパスが導電
性の場合のみ発熱部との電気絶縁対策を行えばよい。The same structure can be basically applied to the case of the back type in which the heat-generating portion shown in FIG. 6 is not provided on the heat-resistant film side. However, when the bypass is provided on the back surface of the heat-generating portion, that is, on the side in contact with the heat-resistant film. It is necessary to make the entire bypass or only the sliding contact surface thereof excellent in the slidability with the heat-resistant film as in the above. When the bypass is provided on the side of the heat-generating portion, there is no sliding with the heat-resistant film.
【0028】なおバイパスの配設面を全面とせず、上記
のように発熱部に通電する電極部分をその配設範囲から
除くことによって、電極付近に配置され同電極と外部電
源とを接続する銅のコネクターの酸化を抑制することが
できる。電極部分に対応する部分にもバイパスを形成す
ると、通常バイパス部分の熱伝導率は基板よりも大きく
設定されるために同部分に選択的に熱が流れ、それによ
って基板端部の電極付近の温度が上がり易いため、コネ
クターが酸化し易くなるからである。特に図6のように
コネクター配置面と同じ面にバイパスを形成する場合に
は、間にガラス層が有るとは言えこの点を配慮した方が
良い。なお前述のようにバイパス物質にダイヤモンドま
たはダイヤモンド組成物以外の導電性のものを複合化の
相手材として選ぶ場合には、電極とバイパスとの間の電
気絶縁性を確保するためにもこの点を配慮するのが好ま
しい。同じ理由によりバイパスの配設端から電極部分の
発熱部寄りの端までの間は、本発明のバイパスの放熱効
果を損なわない程度に広めに設定するのが無難である。
なお前述のように、このバイパスの配設形態は、バルク
状であっても膜状であってもよく、またその配設方式
は、バイパス材質によってはその一部分が基板面に接触
するか、物理的に密着するかまたは接合するか、いずれ
の接続方式であってもよい。By eliminating the electrode portion for energizing the heat generating portion from the area where the heat generating portion is disposed as described above, the copper is disposed near the electrode and connects the electrode to an external power source without setting the entire surface of the bypass. Oxidation of the connector can be suppressed. If a bypass is also formed in a portion corresponding to the electrode portion, the thermal conductivity of the bypass portion is usually set to be higher than that of the substrate, so that heat flows selectively to the same portion, thereby causing the temperature near the electrode at the edge of the substrate to be lower. This is because the connector is easily oxidized since the connector easily rises. In particular, when a bypass is formed on the same surface as the connector arrangement surface as shown in FIG. 6, it is better to take this point into consideration, although there is a glass layer between them. In addition, as described above, when a conductive material other than diamond or a diamond composition is selected as a mating material for the bypass material, this point must be taken into consideration in order to ensure electrical insulation between the electrode and the bypass. Care is preferably taken. For the same reason, it is safe to set the distance between the end of the bypass and the end of the electrode portion near the heat generating portion as wide as not to impair the heat radiation effect of the bypass of the present invention.
As described above, the configuration of the bypass may be bulk or film. Depending on the type of the bypass material, a part of the bypass may be in contact with the substrate surface, Any connection method may be used, such as close contact or joining.
【0029】[0029]
【実施例】(実施例1) 電気絶縁性セラミック基板と
して、長さ400mm、幅10mm、厚み1mmの窒化
アルミニウム(AlN)製、窒化珪素(Si3N4)製、アル
ミナ(Al2O3)製の基板を準備した。これらの熱伝導率
は順に150W/m・K、100W/m・K、20W/m
・Kであり、熱膨張係数は順に4.2×10ー 6/℃、3.
0×10ー 6/℃、7.0×10ー 6/℃であった。これらの
基板を用いて、図3に記載のセラミックヒーターを作製
した。先ずAgペーストをスクリーン印刷し、通電用電
極13のパターンを、Ag−Pdペーストをスクリーン
印刷し、発熱部12のパターンをそれぞれ形成し、これ
らを880℃大気中で焼成して基板11上に焼き付け
た。次にガラスペーストをスクリーン印刷し、750℃
大気中で焼成して図3の14で示したパターンで焼き付
け、同図の構造のセラミックヒーターを作製した。EXAMPLES (Example 1) as an electrical insulating ceramic substrate, length 400 mm, width 10 mm, made of aluminum nitride having a thickness of 1 mm (AlN), silicon nitride (Si 3 N 4) made of alumina (Al 2 O 3) Was prepared. Their thermal conductivity is 150 W / m · K, 100 W / m · K, 20 W / m
· K, and thermal expansion coefficient in turn 4.2 × 10 over 6 / ℃, 3.
0 was × 10 over 6 /℃,7.0×10 over 6 / ° C.. The ceramic heater shown in FIG. 3 was manufactured using these substrates. First, the Ag paste is screen-printed, the pattern of the current-carrying electrodes 13 is printed, and the Ag-Pd paste is screen-printed to form the patterns of the heat-generating portions 12, which are baked in the air at 880 ° C. and baked on the substrate 11. Was. Next, the glass paste is screen-printed at 750 ° C.
It was fired in the air and baked in the pattern shown in FIG. 3 to produce a ceramic heater having the structure shown in FIG.
【0030】図5、図6、図7に示す接続構造を基本に
し、また出来上がったセラミックヒーター基板の発熱部
の形成形態に準じ、高熱伝導性物質として、熱伝導率1
000W/m・Kのダイヤモンド層を熱フィラメントC
VD法によって平均膜厚60μmで形成した。成膜部の
パターンは、幅が8mmでその長さが300mm、38
0mmの二形状とした。その成膜条件は、ガス組成をメ
タン2%、水素98%とし、同圧力70Torrとし
た。パターン長さ300mmのものは発熱部相当の長さ
のものであり、図6または図7に対応する接続構造の試
料に用い、またパターン長さ380mmのものは基板の
全長にほぼ相当する長さのものであり、図5に対応する
接続構造の試料に用いた。したがって表1には「バイパ
ス」欄に図番号で区分表示した。この後ヒーターを樹脂
製の支持体に固定した。Based on the connection structure shown in FIG. 5, FIG. 6, and FIG. 7, and according to the form of the heat generating portion of the finished ceramic heater substrate, a heat conductive material having a heat conductivity of 1
000 W / m · K diamond layer with hot filament C
It was formed with an average film thickness of 60 μm by the VD method. The pattern of the film forming section has a width of 8 mm, a length of 300 mm, and 38 mm.
Two shapes of 0 mm were formed. The film formation conditions were such that the gas composition was 2% methane and 98% hydrogen, and the pressure was 70 Torr. A pattern having a pattern length of 300 mm has a length equivalent to a heat generating portion, and is used for a sample having a connection structure corresponding to FIG. 6 or 7. A pattern having a pattern length of 380 mm has a length substantially corresponding to the entire length of the substrate. And used for a sample having a connection structure corresponding to FIG. Therefore, in Table 1, the "bypass" column is shown by the figure number. Thereafter, the heater was fixed to a resin support.
【0031】また別途同じ接続構造・長さ・幅パターン
でその最表面に3μmのニッケルメッキを施した厚み2
mmの電気銅(熱伝導率が400W/m・K、熱膨張係数
が17×10ー 6/℃)製の薄板をバイパスとして用いたも
の(表1の試料13乃至15)および熱バイパスを設けな
い試料(表1の試料1、5、9)も用意した。この状態で
図1の基本構造の加熱定着装置内に組み付けて、定着試
験を行った。なお電気銅をバイパスとして用いたもの
は、同薄板を上記樹脂製の支持体にその一端を固定し
て、基板上の対応面上にそのばね性によって密着させる
方式で熱的に接続した。Further, the same connection structure, length and width pattern and a thickness of 2 μm with a 3 μm nickel plating on the outermost surface
mm electrolytic copper (thermal conductivity of 400W / m · K, the thermal expansion coefficient of 17 × 10 over 6 / ° C.) of providing those using thin plate made of a bypass (samples 13 to 15 in Table 1) and heat the bypass Samples without samples (Samples 1, 5, and 9 in Table 1) were also prepared. In this state, a fixing test was performed by assembling the heat fixing device having the basic structure shown in FIG. In the case of using electrolytic copper as a bypass, one end of the thin plate was fixed to the resin support, and the thin plate was thermally connected to the corresponding surface on the substrate by its spring property.
【0032】これらのセット試料を4ppmの定着速度
下、先ず通紙幅が約100mmの封筒大の紙を表1に記
載の所定枚数連続定着した後、同一定着速度下で通紙幅
が約300mのA3大の紙を1枚送り込み、その定着状
況を観察した。これを繰り返し、その結果を併せて表1
に示す。なお封筒大の紙の通紙位置は通紙面に向かって
図2に示すように全数ほぼ中央とした。なお封筒大の紙
を通紙後の通紙部分の左右に形成される非通紙部分の温
度は、通紙部分に比べ温度が高くなっており、正面から
赤外線輻射温度計で確認したところ、各通紙毎数段階で
の通紙部と非通紙部のヒーターの表面温度差は、ほぼ表
1の「定着状況」欄の下段に記載のようなレベルであっ
た。なお表中の定着状況欄の評価(1)は紙皺の有無、評
価(2)は支持体の損傷の有無、評価(3)は定着品質を示
す。なお評価(1)の×は「非通紙部で紙皺発生」、△は
「実用上支障のない紙皺発生」、○は「紙皺発生せ
ず」、評価(2)の×は「非通紙部のヒーター取り付け部
の樹脂が大きく溶損」、△は「非通紙部のヒーター取り
付け部の樹脂が一部溶損」、○は「非通紙部のヒーター
取り付け部の樹脂に変化無し」、評価(3)の×は「非通
紙部で高温オフセット発生」、△は「非通紙部で実用上
支障の無い程度若干の高温オフセット発生」、●は「A
3大用紙の非通紙部の端に若干の低温オフセット発生」
の各レベルに対応する。以上の評価レベルの説明内の
「非通紙部」とは、封筒大紙の非通紙部を言う。At a fixing speed of 4 ppm, these set samples are first fixed continuously for a predetermined number of sheets of an envelope size having a sheet passing width of about 100 mm as shown in Table 1, and then A3 sheets having a sheet passing width of about 300 m at the same fixing speed. One sheet of large paper was fed, and the fixing state was observed. This was repeated, and the results were added together in Table 1.
Shown in It should be noted that the paper passing position of the envelope-sized paper was almost centered toward the paper passing surface as shown in FIG. In addition, the temperature of the non-paper passing part formed on the left and right of the paper passing part after the paper of the envelope size is passed is higher than the temperature of the paper passing part, and when confirmed with an infrared radiation thermometer from the front, The surface temperature difference of the heater between the paper passing portion and the non-paper passing portion at several stages of each paper passing was almost at the level described in the lower part of the “fixing status” column in Table 1. The evaluation (1) in the fixing status column in the table indicates the presence or absence of paper wrinkles, the evaluation (2) indicates the presence or absence of damage to the support, and the evaluation (3) indicates the fixing quality. In the evaluation (1), x indicates `` paper wrinkles occur in the non-sheet passing portion '', △ indicates `` paper wrinkles without practically hindering '', ○ indicates `` no paper wrinkles '', and x in evaluation (2) indicates `` The resin in the heater mounting part of the non-paper passing part is greatly damaged. "△" indicates that the resin in the heater mounting part of the non-paper passing part is partially damaged. "No change", x in evaluation (3), "high-temperature offset occurred in non-paper passing area", △: "slightly high-temperature offset occurred in non-paper passing area to the extent that practically no hindrance occurred", ●: "A"
A slight low-temperature offset occurs at the end of the non-sheet passing area of three large sheets
Corresponding to each level. The “non-sheet passing portion” in the above description of the evaluation level refers to the non-sheet passing portion of the large envelope.
【0033】さらに試料4と同じ基本バイパス構造のヒ
ーターを正面型、背面型の二つの向き支持体に固定して
上記と同じ評価を行った。まず上記試料4と同じ窒化ア
ルミニウム製基板・同じバイパス部材を準備し、試料4
と同様の手順でバイパスを基板の発熱部側の面に密着さ
せた(すなわち図7を基本にした接続構造で、上記同様
の手順でバイパスを基板面に接続させた)。この場合上
述のようにヒーターの発熱部側の配置する向きは、正面
型と背面型の二種とした。定着条件は上記と同じ速度、
同じ定着温度とし、上記同様まず封筒大の紙の事前通紙
を表2に記載の枚数行った後、A3大の紙を1枚通紙す
るという手順で、表2に記載の封筒大紙の各通紙枚数段
階でのA3大用紙通紙後、上記同様の項目について確認
をした。表2にその結果を示す。なお表2にはA3大用
紙を通紙する前の封筒大用紙の各通紙枚数段階での通紙
部と非通紙部との基板表面の温度差は記載していない
が、表1の試料4とほぼ同じであった。表中の「A3用
紙の定着状況」とは、「封筒大用紙の各通紙段階でのA
3用紙の定着状況」を、また同欄の枚数は、封筒大用紙
の各通紙段階での枚数を意味する。以下各表とも同じ表
示を行う。Further, the same evaluation as described above was carried out by fixing the heater having the same basic bypass structure as that of the sample 4 to two support members of the front type and the back type. First, the same aluminum nitride substrate and the same bypass member as in Sample 4 were prepared.
The bypass was brought into close contact with the surface of the substrate on the side of the heat generating portion by the same procedure as in (1) (that is, the bypass was connected to the substrate surface in the same procedure as described above with the connection structure based on FIG. 7). In this case, as described above, the orientation of the heater on the side of the heat generating portion was of two types, a front type and a rear type. Fixing conditions are the same speed as above,
At the same fixing temperature, the same procedure as described above is performed. First, the envelope-sized paper is first pre-passed as shown in Table 2 and then the A3-sized paper is passed through one sheet. After passing A3 large sheets at each sheet passing number stage, the same items as described above were checked. Table 2 shows the results. Table 2 does not show the temperature difference of the substrate surface between the sheet passing portion and the non-sheet passing portion at each stage of the number of sheets of the envelope large sheet before passing the A3 large sheet. It was almost the same as Sample 4. “A3 paper fixing status” in the table means “A3 paper at each passing stage of large envelope paper”.
The number of sheets in the same column means the number of sheets of the large envelope paper at each passing stage. Hereinafter, the same display is performed in each table.
【0034】なお試料番号2、3、4のセットについ
て、同じ定着条件で1000枚まで、さらに定着速度を
12ppmに上げて1000枚まで同様の試験・評価を
行ったところ、いずれの場合もほぼ表1に記載された程
度のレベルの評価結果が得られ、本発明の熱バイパスを
特に熱伝導性の高い窒化アルミニウムセラミック基板と
組み合わせることによって、長時間および高速操作状態
であっても、安定に機能することが判明した。The same test and evaluation were performed on the set of sample numbers 2, 3, and 4 up to 1000 sheets under the same fixing conditions, and further, by increasing the fixing speed to 12 ppm and up to 1000 sheets. The evaluation result of the level described in 1 is obtained. By combining the thermal bypass of the present invention with an aluminum nitride ceramic substrate having a particularly high thermal conductivity, it can function stably even in a long-time and high-speed operation state. It turned out to be.
【0035】[0035]
【表1】 [Table 1]
【0036】[0036]
【表2】 [Table 2]
【0037】以上の結果より、非通紙部の異常昇温によ
る封筒非通紙部分でのA3大用紙の紙皺は、封筒大用紙
の累積通紙枚数(すなわち上表記載の通紙枚数)とともに
発生し易く、また定着画像自体の品質は同累積通紙枚数
とともに低下する傾向にあるが、バイパスを設けること
によって少なくとも実用上問題の無いレベルに改善され
ることが分かる。なかでも図6のように、発熱部側にバ
イパスを設けた試料3の配設構造が最も好ましい結果を
示すことが分かる。これは発熱部の放熱面に近接してバ
イパスが設けられるため、熱の移動が早くなることによ
るものと考えられる。なお10枚までの試験条件範囲内
では、通電電極付近のコネクターの酸化による劣化は確
認されなかった。正面型と背面型の両配置による表2の
データより、背面型の方がいくぶん長時間稼働安定性に
優れていることが分かる。これは背面型では正面型のよ
うに、耐熱フィルムとの摺接によるニップ部の断熱現象
の有無が若干影響しているものと考えられる。From the above results, the paper wrinkles of the A3 large paper at the non-paper passing portion of the envelope due to the abnormal temperature rise of the non-paper passing portion is due to the cumulative number of paper passing of the large envelope paper (that is, the number of paper passing in the above table). And the quality of the fixed image itself tends to decrease with the cumulative number of sheets passed, but it can be seen that the provision of the bypass improves the quality at least to a level at which there is no practical problem. In particular, as shown in FIG. 6, it can be seen that the arrangement structure of the sample 3 in which the bypass is provided on the side of the heat generating portion shows the most preferable result. This is probably because the bypass is provided close to the heat-radiating surface of the heat-generating portion, so that the heat moves faster. Note that no deterioration due to oxidation of the connector near the current-carrying electrode was confirmed within the test condition range of up to 10 sheets. From the data in Table 2 for both the front type and the back type arrangement, it can be seen that the back type has somewhat better long-term operation stability. This is considered to be due to the influence of the presence or absence of the heat insulation phenomenon of the nip portion due to the sliding contact with the heat-resistant film as in the front type in the back type.
【0038】(実施例2) 電気絶縁性セラミック基板
として、実施例1と同じ形状の窒化アルミニウム(Al
N)製のセラミック基板を用いた図3の基本構造のヒー
ターを作製し、図5の基本構成・幅8mm×長さ300
mm×厚み0.5mmの外寸で表3に示す内容のダイヤ
モンドまたはダイヤモンド組成物を含む熱バイパスを同
表記載の配設形態で配置し、実施例1と同じ条件で条件
で定着試験を行い、実施例1と同じ項目について評価し
た。その結果を表4に示す。(Example 2) As an electrically insulating ceramic substrate, aluminum nitride (Al) having the same shape as in Example 1 was used.
A heater having the basic structure shown in FIG. 3 using a ceramic substrate manufactured by N) was manufactured, and the basic structure shown in FIG.
A heat bypass containing a diamond or a diamond composition having an outer dimension of mm × 0.5 mm and containing the contents shown in Table 3 was arranged in the arrangement form shown in the same table, and a fixing test was performed under the same conditions as in Example 1. The same items as in Example 1 were evaluated. Table 4 shows the results.
【0039】なお表3記載の全試料セットについて、同
じ定着条件で1000枚まで、さらに定着速度を12p
pmに上げて1000枚まで同様の試験・評価を行った
ところ、いずれの場合もほぼ表4に記載された程度のレ
ベルの評価結果が得られ、本発明の熱バイパス構造が長
時間および高速操作状態であっても、安定に機能するこ
とが判明した。For all the sample sets shown in Table 3, under the same fixing conditions, up to 1000 sheets and a fixing speed of 12
When the same test and evaluation were performed up to 1000 sheets at the same time, the evaluation results were obtained at the level substantially as described in Table 4 in each case. It turned out that it functions stably even in the state.
【0040】[0040]
【表3】 [Table 3]
【0041】[0041]
【表4】 [Table 4]
【0042】以上の結果より、ダイヤモンドを含む各種
複合材料(ダイヤモンド組成物)を熱バイパスとして種々
の配設形態でセラミック基板面に設置することによっ
て、バイパス自体の熱伝導性が損なわれず、非通紙部の
昇温防止のための優れた放熱効果が得られ、紙皺、画像
定着の劣化、支持体のヒーター周辺部の過熱損傷による
不具合の生じないことが分かる。またこの安定状態は、
高速操作でもまた長時間操作でも安定に維持できるもの
であることが分かった。From the above results, by installing various composite materials containing diamond (diamond composition) as a thermal bypass on the ceramic substrate surface in various arrangements, the thermal conductivity of the bypass itself is not impaired, and the It can be seen that an excellent heat radiation effect for preventing the temperature rise of the paper portion was obtained, and no problems were caused by paper wrinkles, deterioration of image fixation, and overheating damage of the peripheral portion of the heater of the support. This stable state is
It has been found that the device can be stably maintained even in a high-speed operation or a long-time operation.
【0043】[0043]
【発明の効果】本発明によれば、セラミックヒーターに
よって加熱する加熱定着装置のセラミックヒーター面に
高熱伝導性のダイヤモンドを含む物質からなる熱バイパ
スを配設することによって、転写材のサイズバリエーシ
ョンによる非通紙部での転写材の損傷やセラミックヒー
ター周辺部材の熱損傷を防止できる。このため高い安定
性の加熱定着装置が提供できる。According to the present invention, by disposing a thermal bypass made of a substance containing diamond having high thermal conductivity on the surface of the ceramic heater of the heating and fixing device which is heated by the ceramic heater, non-uniformity due to the size variation of the transfer material can be improved. It is possible to prevent the transfer material from being damaged in the paper passing portion and the thermal damage to peripheral members of the ceramic heater. Therefore, a highly stable heat fixing device can be provided.
【図1】本発明加熱定着装置の定着部横断面を示す模式
図である。FIG. 1 is a schematic diagram showing a cross section of a fixing unit of a heat fixing device of the present invention.
【図2】本発明加熱定着装置の定着部を正面から見た模
式図である。FIG. 2 is a schematic view of a fixing unit of the heat fixing device of the present invention as viewed from the front.
【図3】本発明セラミックヒーターの基本構造例を示す
模式図である。FIG. 3 is a schematic view showing an example of a basic structure of the ceramic heater of the present invention.
【図4】本発明加熱定着装置の定着部のヒーター配置型
式を示す模式図である。FIG. 4 is a schematic diagram showing a heater arrangement type of a fixing unit of the heat fixing device of the present invention.
【図5】本発明加熱定着装置のヒーターの一構造事例を
示す模式図である。FIG. 5 is a schematic view showing one structural example of a heater of the heat fixing device of the present invention.
【図6】本発明加熱定着装置のヒーターの一構造事例を
示す模式図である。FIG. 6 is a schematic view showing one structural example of a heater of the heat fixing device of the present invention.
【図7】本発明加熱定着装置のヒーターの一構造事例を
示す模式図である。FIG. 7 is a schematic diagram showing one structural example of a heater of the heat fixing device of the present invention.
1、セラミックヒーター 2、支持体または加熱ローラ 3、耐熱フィルム 4、加圧ローラ 5、転写材 6、通紙部 7、非通紙部 8、非通紙部 9、熱バイパス 10、トナー画像 11、セラミック基板 12、発熱部 13、通電電極 14、ガラス層 1, ceramic heater 2, support or heating roller 3, heat-resistant film 4, pressure roller 5, transfer material 6, paper passing unit 7, non-paper passing unit 8, non-paper passing unit 9, thermal bypass 10, toner image 11 , Ceramic substrate 12, heating section 13, conducting electrode 14, glass layer
Claims (6)
セラミックスからなる基板上に発熱部を付与したセラミ
ックヒーターと、これに摺接して回転する耐熱性フィル
ムと、該フィルムに摺接し圧力を加えつつ回転する加圧
ローラとを備え、該加圧ローラによる加圧と前記耐熱フ
ィルムを介した前記セラミックヒーターによる加熱とに
よって、前記耐熱性フィルムと加圧ローラとの間に挟ま
れて移動する転写材の表面に形成されたトナー画像を定
着させる加熱定着装置であって、前記セラミックヒータ
ーの表面上にダイヤモンドを含む熱バイパスが配設され
ていることを特徴とする加熱定着装置。1. A ceramic heater provided on a heating roller and provided with a heat generating portion on a substrate made of an electrically insulating ceramic, a heat-resistant film rotating in sliding contact with the ceramic heater, and a pressure in sliding contact with the film. A pressure roller that rotates while applying pressure, and is moved between the heat-resistant film and the pressure roller by pressure by the pressure roller and heating by the ceramic heater via the heat-resistant film. A heat fixing device for fixing a toner image formed on a surface of a transfer material to be heated, wherein a heat bypass including diamond is provided on a surface of the ceramic heater.
記基板との摺接面と反対側の基板上に形成されているこ
とを特徴とする請求項1に記載の加熱定着装置。2. The heat fixing device according to claim 1, wherein the heat generating portion is formed on a substrate on a side opposite to a sliding contact surface between the heat resistant film and the substrate.
も一面の全面にわたって配設されていることを特徴とす
る請求項1または2のいずれかに記載の加熱定着装置。3. The heat fixing device according to claim 1, wherein the thermal bypass is provided over at least one entire surface of the substrate.
も一面に配設され、発熱部にほぼ対応した位置に部分配
設されていることを特徴とする請求項1または2のいず
れかに記載の加熱定着装置。4. The heat bypass according to claim 1, wherein the heat bypass is disposed on at least one surface of the substrate and is distributed at a position substantially corresponding to a heat generating portion. Heat fixing device.
ィルムとの摺接面上に配設されていることを特徴とする
請求項1ないし4のいずれかに記載の加熱定着装置。5. The heat fixing device according to claim 1, wherein the heat bypass is provided on a surface of the substrate that is in sliding contact with the heat-resistant film.
ルミニウム系セラミックスであることを特徴とする請求
項1ないし5のいずれかに記載の加熱定着装置。6. The heat fixing device according to claim 1, wherein the electrically insulating ceramic is an aluminum nitride-based ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10323598A JPH11296005A (en) | 1998-04-15 | 1998-04-15 | Thermal fixing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10323598A JPH11296005A (en) | 1998-04-15 | 1998-04-15 | Thermal fixing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11296005A true JPH11296005A (en) | 1999-10-29 |
Family
ID=14348795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10323598A Pending JPH11296005A (en) | 1998-04-15 | 1998-04-15 | Thermal fixing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11296005A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015505163A (en) * | 2011-12-20 | 2015-02-16 | 西安炬光科技有限公司 | Conduction-cooled high-power semiconductor laser and method for manufacturing the same |
-
1998
- 1998-04-15 JP JP10323598A patent/JPH11296005A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015505163A (en) * | 2011-12-20 | 2015-02-16 | 西安炬光科技有限公司 | Conduction-cooled high-power semiconductor laser and method for manufacturing the same |
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