JPH11344509A - Probe card and probe pin - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card in which a probe pin is replaceable by a user, capable of being utilized in wide temperature ranges and complying with a surface arrangement of fine pitches and with multiple pins. SOLUTION: A probe card comprises a plurality of straight probe pins 1 which will elastically be deformed when a tip end thereof is made into contact with an electrode pad of an object to be inspected; a pin holding plate 4 for holding a root end of the probe pin 1 so as to be in contact with a pad 5 of a pin supporting base; a positioning plate 2 having a first taper hole 2A into which each probe pin 1 is inserted for positioning the root end; and a guide plate 3 having a second taper hole 3A into which each probe pin 1 is inserted for guiding part near the tip end of the probe pin 1, as well as positioning the tip end. The first taper hole 2A and the second taper hole 3A are provided so that the sides thereof having larger diameters are opposed to each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a probe card and a probe pin used for inspecting electrical characteristics of an object to be inspected such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, there is a step of inspecting a large number of chips (semiconductor devices) formed on a semiconductor wafer in a wafer state. In this step, a probe device equipped with a probe card and an electric signal are processed. The electrical characteristics of each semiconductor device are inspected and sorted by using a tester, and only non-defective products are transferred to the next process.

FIG. 4 briefly describes the movement of each part when inspecting a semiconductor wafer. The probe device (not shown) includes a wafer mounting table that can be moved and controlled in the X, Y, Z, and θ directions, and a probe card installed above the mounting table. Further, this probe card has a plurality of probe pins 21 corresponding to the electrode pads of the chip on the semiconductor wafer. When an electrical inspection of each chip of the semiconductor wafer is performed, the wafer mounting table is set to X, Y with the semiconductor wafer mounted on the wafer mounting table.
And the tip of each probe pin 21 of the upper probe card is aligned with the position of the electrode pad of the chip, and then raised in the Z direction to elastically contact each electrode of the chip with each probe pin 21. Let it. By obtaining electrical continuity in this way, an electric signal from the chip is sent through the probe device via each probe pin 21 of the probe card and further to a tester connected to a higher order, where the electric signal of the chip is transmitted. Inspect the characteristics.

Referring to FIG. 4, a conventional oblique pin type probe card will be described. For a conventional semiconductor wafer having a wide pitch electrode pad, a plurality of probe pins 21 extend obliquely downward from the peripheral portion of the opening 27 formed in the center of the multilayer printed circuit board 24 toward the center. Oblique pin type was the mainstream.

Recently, instead of the oblique pin type probe card shown in FIG. 4, an improved type of oblique pin type shown in FIG. 5 and a vertical pin type shown in FIGS. Density probe cards have been developed and are being put to practical use.

An improved type of the oblique pin type shown in FIG. 5 will be described. The probe pin 31 elastically contacts the electrode pad of the chip at a predetermined angle, is bent in a substantially horizontal direction near the electrode pad, is fixed with an epoxy resin 33 at the tip thereof, and is further bent vertically upward to be fixed to the support base 32. F
The base end is connected and fixed to the connection portion 34 of the PC 35 by soldering. The connecting portion 34 is connected to a printed circuit board via an FPC 35 by a connector provided at the other end.

A conventional example of the vertical pin type shown in FIG. 6 will be described. The base end of the probe pin 41 is connected to the printed circuit board by surface contact with the end surface of the wire or the like 46 of the connection portion 45, and the wire goes downward from that portion and the wire between the guide plate (upper) 43 and the guide plate (lower) 42. A region formed by processing the cross section to be flat becomes a spring function portion 41A which is curved, and further, the upper surface of the guide hole of the guide plate (lower side) 42 returns to the original wire shape having a circular cross section. The tip of the probe pin 41 elastically contacts the electrode pad of the chip of the semiconductor wafer to be inspected through the plate (lower side) 42.

A conventional example of the vertical pin type shown in FIG. 7 will be described. The probe pins 51 extending from the connection portion 55 on the printed circuit board are fixed to a fixing portion 54 provided on the support base material 53, and are bent downward at an angle of 90 ° at the tip thereof to guide the guide plate 52. It penetrates the hole and makes elastic contact with the electrode pad of the chip.

A conventional example of the vertical pin type shown in FIG. 8 will be described. Probe pins 6 connected to printed circuit board 63
1 is bent downward by 90 [deg.] At the tip thereof, penetrates the guide hole of the printed circuit board 63, is fixed by the resin 64 at the hole portion, and further descends vertically and passes through a bent spring function portion 61A. , Penetrates a guide hole provided below the guide plate 62 and makes elastic contact with the electrode pad of the chip. With such a structure, the improved type of the oblique pin type shown in FIG. 5 and the vertical pin type shown in FIGS.
The probe card is more suitable for high integration than the oblique pin type.

Referring to FIG. 6, the operation of each part when testing with a vertical pin type probe card will be described. When an electrical inspection of a semiconductor wafer is performed, the electrode pads of the chips on the semiconductor wafer are resiliently contacted with the corresponding probe pins 41 by overdrive of the wafer mounting table (pushing when the pins are resiliently connected). As a result, the tip of each probe pin 41 is slightly retracted upward from the guide plate (lower side) 42, and the tip of each probe pin 41 becomes the guide plate (upper side) 4.
3 and the guide plate (lower side) 42 are further bent and deformed to resiliently contact pads of the chip, and an electrical inspection of the chip is performed in that state. After the inspection, when the semiconductor wafer is lowered together with the mounting table, each bent probe pin 41 returns to its original state due to its elasticity, and the guide plate is moved to a position of a no-load state in which each tip is not in elastic contact with the electrode pad. (Lower) 42
Protrudes downward from the lower surface of the. As described above, the probe pins 41 are resiliently contacted with the electrode pads of the chip by the overdrive of the mounting table, by utilizing the pressure due to the resilient contact to the surface of the electrode pads formed by a conductive member such as aluminum. This is because an insulator such as an oxide film is scratched and pierced to ensure conduction between the probe pin 41 and the electrode pad. When the pitch of the electrode pads is small, the probe pins 51 and 61 shown in FIGS.
The side surfaces of the adjacent probe pins 51 and 61 may come into contact with each other due to the bending when the elastic member contacts the electrode pad. As a conventional example of this correspondence, each probe pin 51,
There is a type in which an insulating member such as a fluorine resin is generally coated on the side surface of 61 so that there is no electrical interference even when they come into contact with each other. 4 to 8, the various probe pins 21, 31, 41, 51, 61 are made of tungsten, palladium alloy, beryllium copper alloy or the like. The fixing material 33 of the pin tip portion of the probe card of the inclined pin improved type shown in FIG. 5 uses an epoxy resin adhesive or the like, and various base materials 42 having a function of supporting the vertical pin type probe card shown in FIGS. ,
The material of 43, 44, 52, 53, 62, 63 is glass-
Epoxy resin or polyimide substrate or engineering
A plate material such as plastic is used.

[0011]

SUMMARY OF THE INVENTION It is a first object of the present invention to allow a user to change probe pins. In other words, in any type of probe card, while the electrical inspection of the semiconductor wafer is repeated, abrasion occurs at the tip of the probe pin, which is the contact surface with the electrode pad, and the probe pin also bends. . As a result, the shortage of the elastic contact load due to wear and the displacement of the probe pin due to bending occur, so that the electrical conduction becomes incomplete and the use becomes difficult. The following methods are used as a method for dealing with these troubles. A probe block in which a plurality of probe pins are combined can be replaced in units of the probe block (FIG. 5). The user can replace the probe block with a normal probe block.
Therefore, it is difficult to repair the damaged probe block. For a vertical pin type probe card (FIG. 6) in which individual probe pins can be replaced, the probe card is sent back to the manufacturer for repair. In the case of the vertical pin type in which replacement of the probe pins is difficult (FIGS. 7 and 8), the probe card must be replaced with a normal probe card.

A second object of the present invention is to share a probe card in a wide temperature range from a low temperature to a high temperature. That is, the temperature condition for the electrical inspection of the semiconductor wafer is from about minus 10 ° C to about plus 125 ° C. In the case of the conventional probe card, the dimension of the probe card is designed in advance by considering the thermal expansion dimension corresponding to the temperature of the inspection condition,
At the inspection temperature, the positions of the probe pins exactly match the positions of the electrode pads on the semiconductor wafer. When the probe pin arrangement has a fine pitch in such a probe card, it is difficult to share a probe card used at a low temperature and a high temperature, and a probe card having a different design manufactured according to an inspection temperature is used. For this reason, it is difficult for the conventional probe card to perform a wafer burn-in inspection in which all the electrode pads of the semiconductor wafer are collectively and elastically contacted and the temperature is raised to about 125 ° C. in that state and an electrical inspection is performed. .

A third object of the present invention is to provide a plane arrangement with a fine pitch of 50 to 60 μm and increase the number of pins. That is, in the conventional vertical pin type shown in FIGS. 6 to 8, the probe pins 41, 51, and 61 are bent at an intermediate portion between the base end on the circuit board side and the tip elastically contacting the electrode pad. The pitch (interval) between the probe pins cannot be reduced. As a result, in the case of the conventional vertical pin type surface arrangement, about 135 μm is said to be the limit of the fine pitch.

A fourth object of the present invention is to form the thickness of the insulating film as extremely thin as about 1 μm. That is, in the vertical pin type shown in FIGS.
Since the probe pins 1 may be in contact with the adjacent probe pins 51 and 61 when bent, an insulating film is generally formed on the side surfaces of the probe pins 51 and 61 by electrodeposition of PTFE (fluororesin). However, it is difficult to control the thickness of the insulating film accurately with a thickness of 5 μm or less by the deposition method of PTFE by electrodeposition. There are complications such as processing. As a result, variation in the load at the time of elastic contact of the probe pins 51 and 61 due to variation in the thickness of the film becomes large, and variation in the formation range of the probe pins 51 and 61 in the longitudinal direction is accurately managed. Therefore, the probe pins 51 and 61 may be caught in the through holes of the guide plate, and the elastic contact may not be smooth. Therefore, the probe pin 5
The instability of the operations of the first and the 61 and the increase of the manufacturing cost become problems.

A fifth object of the present invention is to provide a probe pin having a stable contact resistance, more specifically having a moderate elasticity, and having a gold and copper component at the tip of the probe pin which is a contact surface even when the tip is worn. To provide. In other words, the electrode pad of the device under test is formed of a conductive material such as aluminum, but there is an insulating material such as an oxide film on the surface thereof. The oxide film is broken by a scratch (scratch) due to a slight horizontal movement of the tip of the pin, thereby making the conduction between the probe pin and the electrode pad more reliable. However, as the number of elastic contacts increases, an insulator such as an oxide film adheres to the tip of the probe pin, which is the contact surface with the electrode pad, and the contact resistance increases. Therefore, the probe card is removed from the probe device and the contact surface is polished. Need to occur. The degree of the increase in the contact resistance greatly differs depending on the material of the probe pin as follows. For example, Japanese Patent Publication 5-41425
As described in the gazette, the contact surface needs to be polished frequently because the increase is remarkable in the case of a tungsten probe pin. The gold (75) copper (25) alloy is very good, and the gold plated tungsten is very good. It is equally good until the bare metal is exposed due to the wear of the gold plating. In addition, beryllium copper alloy is comparatively good, though not as good as gold copper alloy. For this reason, it has been proposed to use a probe pin made of a gold-copper alloy. However, there is a problem that the displacement of the tip is likely to occur due to insufficient elasticity, and the cost is high.

[0016]

SUMMARY OF THE INVENTION Accordingly, the present invention is directed to a plurality of linear probe pins 1 (probe exchange, fine pitch surface arrangement and multiplicity) which are elastically deformed when the tip contacts an electrode pad of a device under test. Effect of pinning), a pin holding plate 4 for holding the base end thereof in contact with the pad 5 of the pin supporting base material (effect of probe pin replacement), A positioning plate 2 having a first tapered hole 2A for determining the position (the effect of the fine pitch surface arrangement and the increase in the number of pins) is inserted, and each probe pin 1 is inserted to guide the tip of the probe pin 1 and determine the position of the tip. A guide plate 3 having a second tapered hole 3A (a surface arrangement of fine pitch and the effect of increasing the number of pins) is provided, and the first tapered hole 2A and the second tapered hole 3A are provided so that the sides having larger diameters face each other. (Probe card A probe card characterized in that the probe pin 1 is smoothly bent and stretched and the effect of removing an oxide film or the like on the surface of the electrode pad by an appropriate scratching action to enable stabilization of the contact resistance, which is a basic condition. In addition, the thermal expansion coefficient of the material of the support base material 7, the positioning plate 2, the guide plate 3, and the pin holding plate 4 is 1.
0 to 4.0 ppm / ° C. (the effect of enabling common use in a wide temperature range). In addition, the side surface has an insulating film 1D whose main component is silicon (by forming an extremely thin insulating film, it is possible to prevent electric interference of the probe pin 1 and to stabilize contact resistance by smooth expansion and contraction and stable load. Effect), a plurality of metal layers 1E, 1F, 1
G, and the main component of the central metal layer 1E is gold or copper (an effect of reducing an increase in contact resistance due to an increase in the number of times of elastic contact due to adhesion of an oxide film on an electrode pad). It is.

The first object of the present invention is to solve the problem that the user can replace the probe pin by simply holding the probe pin 1 in contact with the pin holding plate 4 of the linear probe pin 1 according to the first aspect of the present invention. This can be achieved by slightly projecting the tip of the probe pin 1 from the lower surface of the guide plate 3 provided on the side of the test object.

The second object of the present invention is to solve the problem that "the probe card can be used in a low to high temperature range", which is very similar to the coefficient of thermal expansion of the semiconductor wafer. It is possible to use a material of 4.0 ppm / ° C. for the support base material 7, the positioning plate 2, the pin holding plate 4, and the guide plate 3.

The third object of the present invention, that is, to provide a plane arrangement with a pitch of 50 to 60 μm and to increase the number of pins, is to solve the problem of the first and third aspects of the present invention by forming the probe pin 1 into a linear shape. It is possible to simply hold the ends without fixing them, and to provide an insulating film 1D whose main component is silicon on the side surface of the probe pin 1 and make its thickness about 1 μm.

A fourth object of the present invention is to solve the problem of "forming the thickness of the insulating film of the probe pin to about 1 μm" by immersing in a liquid containing silicon as a main component according to the present invention. It is possible by baking after doing.

The fifth object, "a contact resistance is stable,
More specifically, the probe pin having a moderate elasticity and having a gold and copper component at the tip of the probe pin on the contact surface even when the tip wears out is solved by the invention according to claim 4 in which the cross section of the filament is It is possible to have a probe pin structure composed of a plurality of metal layers 1E, 1F, and 1G concentric and continuous in the longitudinal direction, and the main component of the central metal layer 1E is gold or copper.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to FIGS. First, a probe device using the probe card of the present embodiment will be described. The probe device (not shown) includes one wafer mounting table disposed in the apparatus main body and configured to be movable in the X, Y, Z, and θ directions. The semiconductor wafer as a body can be held horizontally by fixing means such as a vacuum chuck.

The probe card of this embodiment shown in FIG. 1 is disposed above the wafer mounting table. The probe card is fixed to the lower surface of a test head assembly (not shown) provided on the upper surface of the apparatus main body. is set up. The probe card is connected to a test head structure via a spring pin 12, and further connected to a tester.

What is provided by the present invention is a probe card of a vertical pin type that allows the user to replace the probe pin 1 and that can be used in a wide temperature range, and that supports a fine pitch surface arrangement and multiple pins. The probe pin 1 has an extremely thin insulating film on the side surface and has stable contact resistance.

An outline of the configuration will be described with reference to FIG. The support base 7 is formed of glass or metal and has a thickness of 5 to 10 mm, and the surface of the support base 7 faces the base end of the probe pin 1 and is connected to the pin support base by elastic contact. The pad 5 is formed of a material such as copper, which is pulled out from the region facing the probe pin 1 to the outer periphery by the multilayer wiring 8, and the FPC 9 is ACF (anisotropic conductive film) or soldered (both in this portion). (Not shown), is drawn out to the upper surface of the support base 7 through a slit-shaped hole penetrated through the support base 7, and is further connected to the wiring 10 provided from that portion to the outer peripheral portion in the same manner as described above. Connecting. Further, a spring pin 12 is brought into pressure contact with an electrode provided on the surface of the wiring 10 to be conductively connected to the test head assembly.

The probe pin 1 electrically connected to the pad 5 of the pin supporting base and the electrode pad of the semiconductor chip by elastically contacting both end faces of the probe pin 1 has a thickness of about 0.1 to 0.5 mm. Each of the positioning plate 2 and the guide plate 3 formed of the above-mentioned glass plate passes through the first tapered hole 2A and the second tapered hole 3A, and is positioned by the small diameter holes. Also, the positioning plate 2 facing the support base 7
A pin holding plate 4 made of a vitreous flexible plate having a thickness of about 0.1 mm is placed on the upper surface of the substrate. The probe pin 1 is semi-fixed by tight fitting by the holding hole 4A provided therein, so that the probe pin 1
Also, it does not come off from the pin holding plate 4. The positions of the positioning plate 2 and the guide plate 3 in the horizontal direction and the vertical direction are fixed by the support 6 fixed to the support base 7 by the fixing screw 11.

In the case of the probe card having such a structure, the probe pins 1A and 1B which bend between the upper positioning plate 2 and the lower guide plate 3 at the time of elastic contact are bent with a smooth curve and smoothly and accurately. In order to bend up and down with proper positioning,
This can be achieved by providing tapered holes 2A and 3A in the positioning plate 2 and the guide plate 3, respectively, and arranging the tapered holes so that the sides of the tapered holes having the larger diameters face each other. The tapered hole 2
A, 3A, the processing method, the processing target thickness 0.1 ~
In the case of a glass plate of about 0.3 mm, this can be achieved by special etching or a special laser device.

Main substrate materials of the probe card (support base material 7, pin holding plate 4, positioning plate 2, guide plate 3)
Means that the coefficient of thermal expansion of the semiconductor wafer is 2.8 to 3.5 ppm /
It is formed of a material very close to ° C. For example, 3.5 to 3.9 ppm / ° C of low thermal expansion glass, 3.2 to 3.4 ppm / ° C of silicon nitride (Si3N4), or 2.0 to 3.5 ppm / low of low thermal expansion metal (such as Invar).
Use ° C. On the other hand, the thermal expansion coefficient of a material such as a guide plate used in a conventional type probe card is about 8 to 15 ppm / ° C. for glass epoxy resin and about 16 ppm / ° C. for polyimide, which is about twice as large as that of a wafer. The value is several times larger.

The outline of the probe pin 1 will be described with reference to FIG. FIG. 3 shows a metal wire 1C formed with a plurality of metal layers 1E, 1F, and 1G with an insulating film 1D formed on the side surface, and the main component of the central metal layer 1E is gold or copper, which is used in the present invention. is there. The dimensions of the probe pin 1 are φ40 to φ5.
One having a length of 0 μm and a length of 1 to 5 mm is used. The materials used as conventional probe pin metals are tungsten (W), rhenium tungsten (ReW),
Beryllium copper (BeCu), palladium (Pd) alloy and the like are common, and gold copper alloy (AuCu) is a special product.

Referring to FIG. 3, the insulating film will be described. As shown in FIG. 2, there is a possibility that the probe pin 1 makes the elastic contact 1B due to the elastic contact bending 1A. As a countermeasure, the insulating film 1D on the side surface of the probe pin 1 is applied by dipping and lifting a metal wire 1C in a liquid containing silicon as a main component, and sintering in air at about 300 to 450 ° C. for about 1 hour. The thickness is about 1 μm. The conductive contact portions at both ends of the probe pin are formed by cutting the metal wire 1C coated with the insulating film 1D and baked to a predetermined length, and then applying high speed rotation to abrasive paper by applying appropriate pressure to peel off the insulating film 1D. Polish the conductive contact portion. Due to the probe pin 1 having the extremely thin insulating film 1D formed in this way, the variation in load when the probe pin 1 is elastically contacted is small, and
Effects such as no electrical interference between adjacent probe pins during bending can be obtained with a plane arrangement of 60 μm pitch.

Referring to FIG. 3, the contact resistance will be described.
As a material of a metal wire having a low contact resistance characteristic used for a probe pin, a method of forming a gold-copper alloy in a wire or welding a gold-copper alloy metal to a tip of a metal wire to be elastically contacted has been proposed. There is a problem that the elasticity is insufficient or the cost increases. Further, in the method of performing gold plating having the same effect, if the contact surface is worn, the base metal is exposed and the effect is lost. Therefore, in the example of the present invention, a phosphor bronze plate in which gold is clad on both surfaces (a metal plate is pressed through an alloy layer) is formed in a cylindrical shape, and then drawn (drawn) into a thin tube to form a final tube. The state is such that the inner diameter of the tube is infinitely 0 μm. As a result, a probe pin having a shape as shown in FIG. 3 and having the central metal layer 1E made of gold, the first metal layer 1F made of phosphor bronze, and the second metal layer 1G made of gold can be formed. Phosphor bronze has elasticity and can be used as the probe pin 1. Further, according to this method, since the gold layer is continuous in the longitudinal direction of the probe pin 1, the gold continuously appears on the surface even if the tip is worn by elastic contact. Note that an elastic material other than phosphor bronze may be used. According to this method, an appropriate amount of elasticity can be obtained, so that it is possible to reduce an increase in contact resistance and an occurrence of deformation of the probe pin due to an increase in the number of times of elastic contact.

Referring to FIG. 1, a method of replacing the probe pin 1 by a user will be described. First, if the tip of the probe pin 1 protruding from the lower surface of the guide plate 3 is gripped and pulled out with tweezers or the like, the probe pin 1 can be pulled out. Similarly, the probe pin can be inserted and mounted. However, in the case of a fine pitch portion, it is necessary to select an appropriate tweezer and to use skillful attention.

The fact that common use in a wide temperature range is possible will be described. A description will be given by taking burn-in of a wafer having a diameter of 300 mm as an example. When the temperature is increased from room temperature 23 ° C. to 125 ° C., the difference in thermal expansion coefficient between the wafer and the probe card is 1
If it is set to ppm / ° C., the maximum value of the displacement at a distance (150 mm) from the center of the wafer to the periphery is 15.3 μm. This is an acceptable range when the pad size is 40 μm square.

The fact that surface arrangement and multiple pins are possible at a fine pitch of 50 to 60 μm will be described with reference to FIGS. The probe pins 1 used are linear and have a diameter of about 40 μm, and the thickness of the side insulating film 1D is also about 1 μm. Further, even if the side surface of the adjacent probe pin 1 comes into contact with the elastic contact, no electrical interference occurs due to the presence of the insulating film 1D. Also, the small hole diameter of the tapered holes 2A and 3A is set to 43-4.
When the thickness is about 5 μm, a plane arrangement with a pitch of 50 μm is possible.

The fact that the extremely thin insulating film 1D can be formed with a thickness of about 1 μm will be described with reference to FIG. The insulating film 1D is applied by dipping and pulling up the metal wire 1C in a liquid containing silicon as a main component, and the thickness can be changed by the concentration of the liquid, the pulling speed and the number of times.
Sintering in air at 450 ° C. for about 1 h causes some thickness shrinkage. However, even if a thick film is formed, 2μ
m is the maximum, and the margin of working conditions is large. From this, it is easy to form an insulating film of about 1 μm.

Referring to FIGS. 1 to 3, the stabilization of the contact resistance will be described. When inspecting the electrical characteristics of a semiconductor wafer using the probe card of this embodiment shown in FIG. 1, the wafer mounting table is moved in the X, Y, and θ directions to perform positioning, and then the wafer mounting table is moved to the Z direction. Then, the wafer mounting table is further raised by an overdrive (push-in at the time of elastic contact) 13 so that each probe pin 1 is brought into contact with each electrode pad of the semiconductor wafer. Make contact with the pad. Then, each probe pin 1 bends 1A at the time of elastic contact between the positioning plate 2 and the guide plate 3 and a slight horizontal displacement occurs under the guide plate 3 as well. The removal of the oxide film and the like on the surface of the electrode pad at 14 and the effect of stabilizing the contact resistance of the center metal layer 1E of the probe pin 1 with gold and copper are synergistic, so that even if the number of times of elastic contact increases, the contact resistance decreases. Stable electrical continuity can be obtained, and stable transmission and reception of electrical signals between the chip on the semiconductor wafer and the tester, that is, stable electrical inspection of the chip can be performed. In addition, the tip scratch 1 of the bending 1A at the time of elastic contact
The size of 4 can be set by the length of the probe pin 1 protruding from the lower surface of the guide plate 3.

[0037]

According to the present invention, the following effects can be obtained. A plurality of linear probe pins 1 that are elastically deformed when their tips come into contact with the electrode pads of the device under test, and a pin holding plate 4 that holds the base end of the probe pins 1 in contact with the pad 5 of the pin supporting base material. This has the effect of replacing the probe pins, arranging the planes with a fine pitch and increasing the number of pins.

A positioning plate 2 having a first tapered hole 2A through which each probe pin 1 is inserted to determine the position of its proximal end.
And a second tapered hole 3A for guiding each probe pin 1 to guide the tip portion thereof and determining the position of the tip portion.
With the guide plate 3 having the above, there is an effect that the surface is arranged at a fine pitch and the number of pins is increased.

The first tapered hole 2A and the second tapered hole 3A
In order to stabilize the contact resistance, which is a basic condition of the probe card, by providing the electrodes having the larger hole diameters so as to face each other, an electrode is formed by smooth bending and stretching of the probe pin 1 and an appropriate scratching action. There is an effect of removing an oxide film on the pad surface.

The materials of the support base material 7, the positioning plate 2, the guide plate 3 and the pin holding plate 4 have a thermal expansion coefficient of 1.0 to 4.0.
By setting to be ppm / ° C., there is an effect of enabling sharing in a wide temperature range.

By using the insulating film 1D whose main component is silicon, it becomes possible to form an extremely thin insulating film 1D on the side surface of the probe pin 1, thereby preventing electric interference of the probe pin 1 and improving smooth expansion and contraction. There is an effect that the contact resistance can be stabilized by a stable load.

A plurality of metal layers 1E, 1F, which are concentric in cross section of the metal wire 1C of the probe pin 1 and continuous in the longitudinal direction.
Since the center metal layer 1E is made of gold or copper, the center metal layer 1E has an effect of reducing an increase in contact resistance due to an increase in the number of times of elastic contact due to adhesion of an oxide film on an electrode pad.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view of a probe card according to an embodiment.

FIG. 2 is a partial cross-sectional view showing a mounting state of a probe pin of the probe card of the embodiment and a bending state of the probe pin during overdrive.

FIG. 3 is a longitudinal sectional view of a probe pin according to the embodiment.

FIG. 4 is a partial cross-sectional view of an oblique pin type according to Conventional Example 1.

FIG. 5 is a partial sectional view of an improved type of the oblique pin type of Conventional Example 2.

FIG. 6 is a partial sectional view of a vertical pin type of Conventional Example 3.

FIG. 7 is a partial sectional view of a vertical pin type of Conventional Example 4.

FIG. 8 is a partial sectional view of a vertical pin type of Conventional Example 5.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Probe pin 1A Bending at the time of elastic contact 1B Contact at the time of elastic contact 1C Metal wire 1D Insulating film 1E Center metal layer 1F 1st metal layer 1G 2nd metal layer 2 Positioning plate 2A 1st taper hole 3 Guide plate 3A 2nd taper hole 4 Pin holding plate 4A Holding hole 5 Pin of supporting substrate 6 Support 7 Supporting substrate 8 Multilayer wiring 9 FPC 10 Wiring 11 Fixing screw 12 Spring pin 13 Overdrive (Pushing in elastic contact) 14 Scratch on tip 15 Conductive pattern portion

Claims (4)

[Claims] A plurality of linear probe pins (1) that are elastically deformed when their tips come into contact with an electrode pad of a device under test.
A pin holding plate (4) for holding a base end thereof in contact with a pad (5) of a pin supporting substrate, and each probe pin (1)
Through the first tapered hole (2
A) a positioning plate (2) having a second tapered hole (3A) for inserting each probe pin (1) to guide the probe near its tip and determining the position of the tip. A probe card, wherein the first tapered hole (2A) and the second tapered hole (3A) are provided so that the side having a larger hole diameter faces each other. 2. The thermal expansion coefficient of the material of the support substrate (7), the positioning plate (2), the guide plate (3) and the pin holding plate (4) is 1.0 to 4.0 ppm / ° C. Item 7. The probe card according to item 1. 3. An insulating film whose main component is silicon on the side surface (1D).
Having a probe pin. 4. A probe pin comprising a plurality of metal layers (1E, 1F, 1G) having a concentric cross section and continuous in the longitudinal direction, and a main component of a central metal layer (1E) is gold or copper.