JPH11352054A - Ellipsometry apparatus - Google Patents
Ellipsometry apparatusInfo
- Publication number
- JPH11352054A JPH11352054A JP10158991A JP15899198A JPH11352054A JP H11352054 A JPH11352054 A JP H11352054A JP 10158991 A JP10158991 A JP 10158991A JP 15899198 A JP15899198 A JP 15899198A JP H11352054 A JPH11352054 A JP H11352054A
- Authority
- JP
- Japan
- Prior art keywords
- light
- dimensional
- measuring
- sample
- polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000572 ellipsometry Methods 0.000 title claims abstract description 25
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 230000010287 polarization Effects 0.000 claims description 36
- 238000005259 measurement Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光の反射による偏
光状態の変化をもとに薄膜の膜厚、光学定数を測定する
エリプソメトリ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ellipsometry apparatus for measuring a thickness and an optical constant of a thin film based on a change in polarization state due to reflection of light.
【０００２】[0002]
【従来の技術】この種のエリプソメトリ装置の原理で
は、既知の任意の偏光を試料に照射したとき、反射され
る反射光の偏光状態は試料の光学定数、試料表面の薄膜
の膜厚及び光学定数により一意的に決まる。そこで、反
射光の偏光状態を計測することにより、逆に試料表面の
薄膜の膜厚及び光学定数を測定する。そのための計測装
置としては、従来から多くのものが開発されている。2. Description of the Related Art According to the principle of this type of ellipsometry apparatus, when a sample is irradiated with any known polarized light, the polarization state of reflected light is determined by the optical constant of the sample, the film thickness of the thin film on the sample surface, and the optical state. It is uniquely determined by a constant. Therefore, by measuring the polarization state of the reflected light, the thickness and the optical constant of the thin film on the sample surface are measured. Many measuring devices have been developed for this purpose.
【０００３】図３は、従来のエリプソメトリ装置の原理
を表す図である。図３には、広く用いられている光電測
光型のエリプソメトリ装置を示している。この装置は光
源１００、偏光子１０１、検光子１０２、及び検出器１
０３からなる。FIG. 3 is a diagram showing the principle of a conventional ellipsometry device. FIG. 3 shows a widely used photoelectric photometric ellipsometer. This device comprises a light source 100, a polarizer 101, an analyzer 102, and a detector 1
It consists of 03.
【０００４】上記エリプソメトリ装置を用いた従来の典
型的な計測方法の一つは回転検光子型であり、この方法
では入射光が計測対象である試料に対して適した方位角
をなす直線偏光になるよう、偏光子１０１の方位角Ｐを
調整する。そのとき検光子１０２を回転させ、回転させ
た検光子１０２の方位角Ａに対する検出器１０３の光強
度を多数点計測し、得られた波形から反射光の偏光状態
を測定する。One of the conventional typical measuring methods using the above-mentioned ellipsometry apparatus is a rotary analyzer type. In this method, incident light is linearly polarized light having an azimuth angle suitable for a sample to be measured. The azimuth angle P of the polarizer 101 is adjusted so that At this time, the analyzer 102 is rotated, the light intensity of the detector 103 with respect to the azimuth A of the rotated analyzer 102 is measured at many points, and the polarization state of the reflected light is measured from the obtained waveform.
【０００５】そして、このように反射偏光計測されたデ
ータの中からＰ偏光の反射率とＳ偏光の反射率の比、す
なわち下式（１）により反射率比ρを求め、計算により
薄膜の膜厚、屈折率を求める。Then, the ratio of the reflectance of P-polarized light to the reflectance of S-polarized light, that is, the reflectance ratio ρ is obtained from the following equation (1) from the data obtained by measuring the reflected polarization, and the thin film is calculated by calculation. Find thickness and refractive index.
【０００６】 反射率比ρ＝Ｐ偏光の反射率／Ｓ偏光の反射率 …（１） あるいは、検光子１０２の方位角Ａを固定し、偏光子１
０１を回転させながら検出器１０３にて光強度を計測す
る。The reflectance ratio ρ = P-polarized light reflectance / S-polarized light reflectance (1) Alternatively, the azimuth A of the analyzer 102 is fixed, and the polarizer 1
The light intensity is measured by the detector 103 while rotating 01.
【０００７】[0007]
【発明が解決しようとする課題】上記方法により、従来
は計測対象が理想表面に近似している、すなわち入射光
が照射された面は同一の膜厚、光学定数であることを前
提とし、入射光の当たる点の情報として計測を行なって
いた。このため、計測対象が不均一な場合すなわち、入
射光が照射された面内で膜厚や光学定数が異なる分布を
している場合は、平均値しか計測できず分布計測には適
用できない問題があった。According to the above-described method, it is conventionally assumed that the object to be measured is close to the ideal surface, that is, the surface irradiated with the incident light has the same thickness and the same optical constant. The measurement was performed as information on the point where the light hits. Therefore, when the measurement target is non-uniform, that is, when the distribution of the film thickness and the optical constant are different in the plane irradiated with the incident light, only the average value can be measured and the measurement cannot be applied to the distribution measurement. there were.
【０００８】本発明の目的は、計測対象が不均一なもの
である場合でも計測光束中の分布を計測できるエリプソ
メトリ装置を提供することにある。An object of the present invention is to provide an ellipsometry apparatus capable of measuring a distribution in a measurement light beam even when an object to be measured is non-uniform.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決し目的を
達成するために、本発明のエリプソメトリ装置は以下の
如く構成されている。In order to solve the above-mentioned problems and achieve the object, an ellipsometer according to the present invention is configured as follows.
【００１０】本発明のエリプソメトリ装置は、試料から
の反射光の偏光状態を計測することにより前記試料の状
態を測定するエリプソメトリ装置において、前記反射光
を偏光する二つ以上の偏光手段と、この二つ以上の偏光
手段にて三つ以上の方向へ偏光された前記反射光を検出
する三つ以上の一次元検出素子あるいは二次元検出素子
で構成された検出手段と、これら三つ以上の検出手段に
おける三つ以上の方位角による偏光成分の一次元あるい
は二次元計測結果を基に、前記反射光の偏光状態を計測
する計測手段と、から構成されている。The ellipsometry apparatus of the present invention is an ellipsometry apparatus for measuring the state of the sample by measuring the polarization state of the reflected light from the sample, wherein two or more polarizing means for polarizing the reflected light; A detection means comprising three or more one-dimensional detection elements or two-dimensional detection elements for detecting the reflected light polarized in three or more directions by the two or more polarization means, And measuring means for measuring the polarization state of the reflected light based on the one-dimensional or two-dimensional measurement results of the polarization components at three or more azimuth angles in the detecting means.
【００１１】[0011]
【発明の実施の形態】図１は、本発明の実施の形態に係
るエリプソメトリ装置の構成を示す図である。図１に示
すエリプソメトリ装置では、光源１０からの光が光ファ
イバー１１により入射光学系に導かれる。光ファイバー
１１から射出される光は、コリメータレンズ２０にて観
察領域に応じた広さの平行光にされ、この平行光の偏光
を偏光子２１が直線偏光にする。この直線偏光の平行光
は、計測対象である試料１の表面に照射される。FIG. 1 is a diagram showing a configuration of an ellipsometry apparatus according to an embodiment of the present invention. In the ellipsometry apparatus shown in FIG. 1, light from a light source 10 is guided by an optical fiber 11 to an incident optical system. The light emitted from the optical fiber 11 is collimated by a collimator lens 20 into parallel light having a size corresponding to the observation area, and the polarizer 21 converts the parallel light into linearly polarized light. The linearly polarized parallel light is applied to the surface of the sample 1 to be measured.
【００１２】試料１の表面で反射された反射光のうちの
特定偏光成分が、透明板３１で２次元受光器４０方向へ
反射される。また、透明板３１の透過光が、偏光ビーム
スプリッタ３２で二つの偏光成分に分離される。透明板
３１及び偏光ビームスプリッタ３２で分離された光は、
それぞれ２次元受光器４０，４１，４２で受光される。
コントローラー６０は各２次元受光器４０〜４２を制御
し、制御装置６１は計測データを処理し、計測を制御す
る。A specific polarization component of the light reflected on the surface of the sample 1 is reflected by the transparent plate 31 toward the two-dimensional light receiver 40. Further, the light transmitted through the transparent plate 31 is split into two polarization components by the polarization beam splitter 32. The light separated by the transparent plate 31 and the polarizing beam splitter 32 is
Light is received by the two-dimensional light receivers 40, 41, and 42, respectively.
The controller 60 controls each of the two-dimensional light receivers 40 to 42, and the control device 61 processes the measurement data and controls the measurement.
【００１３】図１では、試料や光学部品等を支持するた
めの支持装置等を示していないが、この種の支持装置に
は一般的な光学台などの汎用的な方法によるものが用い
られる。また、光源１０として偏光が得られるレーザ光
源を用い、光ファイバー１１として偏光を保存する光フ
ァイバーを用いるならば、偏光子２１は不要である。FIG. 1 does not show a supporting device for supporting a sample, an optical component, or the like, but a general-purpose method such as a general optical bench is used for this type of supporting device. Further, if a laser light source that can obtain polarized light is used as the light source 10 and an optical fiber that preserves polarized light is used as the optical fiber 11, the polarizer 21 is unnecessary.
【００１４】光源１０には、レーザ光のような高輝度単
色光、白色光、白色光を分光した単色光等、様々なもの
を用いることができる。光ファイバー１１は、偏光保存
等の特別な機能は必要なく、目的とする計測波長に適し
たものであればよい。また、そのファイバー径は細いも
のほど望ましいが、特に制限するものではない。Various light sources such as high-brightness monochromatic light such as laser light, white light, and monochromatic light obtained by dispersing white light can be used as the light source 10. The optical fiber 11 does not require a special function such as polarization preservation, and may be any fiber that is suitable for a target measurement wavelength. The smaller the fiber diameter, the better, but it is not particularly limited.
【００１５】コリメータレンズ２０は、それ以降に用い
る光学部品に適した平行光線を作り出すものであり、光
ファイバー等から射出される拡散光を平行光にする。計
測器の構成によっては光ファイバー１１またはコリメー
タレンズ２０を用いずに光源１０から直接拡散光または
平行光を射出するように構成してもよい。また偏光子２
１は、偏光プリズム等一般的に用いられるものであれば
よい。ただし前述したように、光源に直線偏光のものを
用いる場合には省略することが可能である。The collimator lens 20 produces a parallel light beam suitable for optical components used thereafter, and converts the diffused light emitted from an optical fiber or the like into a parallel light beam. Depending on the configuration of the measuring instrument, the light source 10 may be configured to directly emit diffused light or parallel light without using the optical fiber 11 or the collimator lens 20. Polarizer 2
1 may be any commonly used one such as a polarizing prism. However, as described above, when a linearly polarized light source is used, the light source can be omitted.
【００１６】透明板３１は、その屈折率により決まるブ
リュースター角で平行光を入射する。透明板３１の反射
光は、２次元受光器４０に入射される。透明板３１の透
過光は、透明板３１の方位角に対して異なる方位角を有
する偏光ビームスプリッタ３２に規定の角度で入射され
る。偏光ビームスプリッタ３２から射出される二つの光
は、それぞれ２次元受光器４１，４２に入射され、それ
ぞれの位置と光強度を示す信号がコントローラ６０から
制御装置６１に出力され、計測される。なお、２次元受
光器４０〜４２は、反射光線を垂直に入力するよう取り
付けられることが望ましい。The transparent plate 31 receives parallel light at a Brewster angle determined by its refractive index. The reflected light from the transparent plate 31 is incident on the two-dimensional light receiver 40. The light transmitted through the transparent plate 31 is incident on the polarizing beam splitter 32 having a different azimuth from the azimuth of the transparent plate 31 at a specified angle. The two lights emitted from the polarization beam splitter 32 are respectively incident on the two-dimensional light receivers 41 and 42, and signals indicating their positions and light intensities are output from the controller 60 to the control device 61 and measured. The two-dimensional light receivers 40 to 42 are desirably attached so as to input the reflected light beams vertically.
【００１７】本発明によるエリプソメトリ装置が従来と
大きく異なる点は、従来の回転検光子型では検光子を回
転させ、多数の偏光方向の各偏光毎の全信号強度から反
射光の偏光状態を測定していたのに対し、本発明では三
つ以上の偏光方向の信号強度を、検光子を回転させない
方法で計測する点にある。そのため、従来の計測光学系
に比べ、稼動部が無く、安定した光学特性を得ることが
できるので、一次元あるいは二次元分布検出が可能とな
る。The ellipsometry apparatus according to the present invention is greatly different from the conventional ellipsometry apparatus in that the conventional rotary analyzer type rotates the analyzer and measures the polarization state of the reflected light from the total signal intensity of each polarization in a number of polarization directions. On the other hand, in the present invention, the signal intensity in three or more polarization directions is measured by a method without rotating the analyzer. Therefore, compared to the conventional measurement optical system, there is no moving part, and stable optical characteristics can be obtained, so that one-dimensional or two-dimensional distribution can be detected.
【００１８】本方法により、一次元あるいは二次元受光
器の位置分解能の範囲で試料の位置不均一さの影響を除
去し正確な計測を行なうとともに、一次元あるいは二次
元像を得ることが可能となる。なお、本方法における偏
光解析方法は、特願平０９−２６２１４５号公報及び特
願平０９−２６１７７５号公報に開示されている。According to the present method, it is possible to remove the influence of the non-uniform position of the sample within the range of the position resolution of the one-dimensional or two-dimensional light receiver, perform accurate measurement, and obtain a one-dimensional or two-dimensional image. Become. The polarization analysis method in this method is disclosed in Japanese Patent Application Nos. 09-262145 and 09-261775.
【００１９】また、各一次元あるいは二次元受光器は光
線に対して同じ角度で取り付けられているので、各一次
元あるいは二次元受光器にて光束を同じ倍率で捕らえる
ことができ、同一点の信号強度を得ることができる。ま
た、図１に示す一次元あるいは二次元受光器の取付け角
度αを試料表面への入射角θと同一にすれば、同一の縦
横比にて試料表面像観察することが可能となる。Further, since each one-dimensional or two-dimensional light receiver is attached at the same angle with respect to the light beam, each one-dimensional or two-dimensional light receiver can catch the light beam at the same magnification, and The signal strength can be obtained. Further, if the mounting angle α of the one-dimensional or two-dimensional light receiver shown in FIG. 1 is made the same as the incident angle θ on the sample surface, it is possible to observe the sample surface image at the same aspect ratio.
【００２０】図２は、上記エリプソメトリ装置をアモル
ファス太陽電池製膜装置を一例とする製造装置に適用し
た構成を示す図である。図２においてＣ１〜Ｃ７は真空
室であり、真空室Ｃ２，Ｃ４，Ｃ６内には、基板ヒータ
ーＨ，基板Ｓ，対向電極Ｂが並設されており、それぞれ
排気装置Ｐ１，Ｐ２，Ｐ３とガス供給装置Ｇ１，Ｇ２，
Ｇ３が通じている。さらに真空室Ｃ２，Ｃ４，Ｃ６に
は、基板ヒーターＨ，基板Ｓ，対向電極Ｂに対して、そ
れぞれ図１に示したエリプソメトリ装置の照射側２であ
るＥ１，Ｅ２，Ｅ３と受光側３であるＥ４，Ｅ５，Ｅ６
が設けられている。また、排気装置Ｐ１〜Ｐ３とガス供
給装置Ｇ１〜Ｇ３は製膜制御装置Ｍを介して解析装置Ｎ
に接続されており、Ｅ４，Ｅ５，Ｅ６は解析装置Ｎに接
続されている。FIG. 2 is a diagram showing a configuration in which the above-mentioned ellipsometry apparatus is applied to a manufacturing apparatus exemplifying an amorphous solar cell film forming apparatus. In FIG. 2, C1 to C7 are vacuum chambers. A substrate heater H, a substrate S, and a counter electrode B are provided side by side in the vacuum chambers C2, C4, and C6. Supply devices G1, G2
G3 is connected. Further, in the vacuum chambers C2, C4, and C6, the substrate heater H, the substrate S, and the counter electrode B are respectively connected to the irradiation side E1, E2, and E3 and the light receiving side 3 of the ellipsometry apparatus shown in FIG. A certain E4, E5, E6
Is provided. Further, the exhaust devices P1 to P3 and the gas supply devices G1 to G3 are connected to the analysis device N via the film formation control device M.
And E4, E5, and E6 are connected to the analyzer N.
【００２１】図２に示した製膜装置では、製膜制御装置
Ｍにより排気装置Ｐ１〜Ｐ３、ガス供給装置Ｇ１〜Ｇ
３、基板ヒーターＨ及び対向電極Ｂに高周波電力を供給
する高周波電源（不図示）を制御し、基板Ｓ上に必要な
厚さの膜を被着させる。このとき、照射系、偏光解析系
が対となった上記エリプソメトリ装置により、逐次、膜
厚と屈折率を計測し、その結果を基に製膜制御装置Ｍが
ガス供給量や高周波電力等を調整することで、所定の製
膜を行なう。In the film forming apparatus shown in FIG. 2, the film forming control device M controls the exhaust devices P1 to P3 and the gas supply devices G1 to G.
3. A high-frequency power supply (not shown) for supplying high-frequency power to the substrate heater H and the counter electrode B is controlled to deposit a film of a required thickness on the substrate S. At this time, the film thickness and the refractive index are sequentially measured by the above-mentioned ellipsometry device in which the irradiation system and the polarization analysis system are paired, and based on the result, the film forming control device M determines the gas supply amount, the high frequency power, and the like. By adjusting, a predetermined film formation is performed.
【００２２】上述した従来の手法では、ある一定面積に
偏光したレーザー光を照射し、その反射光の各偏光毎の
全強度を検出器で受光する。そして計測された反射光の
偏光状態を解析することにより、試料表面の薄膜の膜
厚、光学定数を求めることができる。しかし、試料表面
が均一なときはよいが、レーザーを照射された面積にお
いて前記の膜厚や光学定数に分布がある場合、全強度の
検出器では平均値しか計測できず分布計測ができない。
さらに、光学膜厚の分布が計測波長程度以上になると正
しい計測ができないという問題がある。In the above-described conventional technique, a laser beam polarized to a certain area is irradiated, and the total intensity of the reflected light for each polarization is received by a detector. Then, by analyzing the polarization state of the measured reflected light, the thickness and optical constant of the thin film on the sample surface can be obtained. However, although it is good when the sample surface is uniform, if the film thickness and the optical constant have a distribution in the area irradiated with the laser, a detector of all intensities can measure only an average value and cannot perform distribution measurement.
Further, there is a problem that correct measurement cannot be performed if the distribution of the optical film thickness is about the measurement wavelength or more.
【００２３】これに対して本実施の形態では、二次元の
検出器もしくは一次元の検出器を用いることにより、そ
の検出器の分解能の範囲にて、レーザーを照射された面
積内の分布計測が可能となる。例えば、２５６×２５６
素子の分解能を有する検出器を利用することにより、従
来法と同一面積にレーザー光を照射した場合、分解能は
１／（２５６×２５６）となり、非常に微細な膜構造の
解析が極めて短時間で可能となる。本実施の形態では、
図１に示すようにレーザー光の反射光による像が３組の
二次元受光器の取り付け角度αを試料表面への入射角度
θと同一となるように配置することにより、二次元受光
器の受光面と試料照射面の縦横比が同一サイズとなり、
３組の受光器で得られた二次元反射光の縦横比が同一な
計測データが得られる。On the other hand, in the present embodiment, by using a two-dimensional detector or a one-dimensional detector, the distribution within the area irradiated with the laser can be measured within the resolution range of the detector. It becomes possible. For example, 256 × 256
By using a detector having the resolution of the element, when the same area as the conventional method is irradiated with laser light, the resolution becomes 1 / (256 × 256), and the analysis of a very fine film structure can be performed in a very short time. It becomes possible. In the present embodiment,
As shown in FIG. 1, the two-dimensional photodetectors are arranged such that the image formed by the reflected light of the laser beam has the same mounting angle α of the three sets of two-dimensional photodetectors as the incident angle θ to the sample surface. The aspect ratio of the surface and the sample irradiation surface is the same size,
Measurement data having the same aspect ratio of the two-dimensional reflected light obtained by the three sets of light receivers is obtained.
【００２４】なお、本発明は上記実施の形態のみに限定
されず、要旨を変更しない範囲で適宜変形して実施でき
る。It should be noted that the present invention is not limited to the above-described embodiment, but can be implemented with appropriate modifications without departing from the scope of the invention.
【００２５】（実施の形態のまとめ）実施の形態に示さ
れた構成及び作用効果をまとめると次の通りである。(Summary of Embodiment) The configuration, operation and effect shown in the embodiment are summarized as follows.
【００２６】実施の形態に示されたエリプソメトリ装置
は、試料１からの反射光の偏光状態を計測することによ
り前記試料１の状態を測定するエリプソメトリ装置にお
いて、前記反射光を偏光する二つの偏光手段（３１，３
２）と、この二つの偏光手段（３１，３２）にて三つの
方向へ偏光された前記反射光を検出する三つの検出手段
（４０，４１，４２）と、これら三つの検出手段（４
０，４１，４２）における三つの方位角による偏光成分
の二次元計測結果を基に、前記反射光の偏光状態を計測
する計測手段（６１）と、から構成されている。The ellipsometry apparatus shown in the embodiment is an ellipsometry apparatus for measuring the state of the sample 1 by measuring the polarization state of the reflected light from the sample 1. Polarizing means (31, 3
2), three detecting means (40, 41, 42) for detecting the reflected light polarized in three directions by the two polarizing means (31, 32), and these three detecting means (4).
And measuring means (61) for measuring the polarization state of the reflected light based on the two-dimensional measurement results of the polarization components at three azimuth angles in (0, 41, 42).
【００２７】このように上記エリプソメトリ装置によれ
ば、三方位角の偏光成分の二次元計測結果を基に反射光
の偏光状態を求めるため、計測対象が不均一なものであ
る場合でも計測光束中の分布を計測でき、薄膜の一次元
的あるいは二次元的屈折率、光学定数分布を求めること
ができる。また、三つの検出手段（４０，４１，４２）
を光線に対し入射角と同じ角度に設置することで、像の
縦横比を同一にして計測することができる。As described above, according to the ellipsometry apparatus, since the polarization state of the reflected light is obtained based on the two-dimensional measurement result of the polarization components at the three azimuth angles, the measurement light flux is obtained even when the measurement target is non-uniform. The distribution in the inside can be measured, and the one-dimensional or two-dimensional refractive index and optical constant distribution of the thin film can be obtained. Also, three detecting means (40, 41, 42)
Is set at the same angle as the incident angle with respect to the light beam, the image can be measured with the same aspect ratio.
【００２８】なお、実施の形態では三つの方位角の偏光
成分について記載したが、三つ以上の方位角の偏光成分
を検出できるように偏光手段及び検出手段を適宜選択す
ることにより、同様に計測対象面の一次元あるいは二次
元的屈折率、光学定数分布を求めることができる。Although the embodiment has described the polarization components of three azimuth angles, the measurement is similarly performed by appropriately selecting the polarization means and the detection means so that the polarization components of three or more azimuth angles can be detected. One-dimensional or two-dimensional refractive index and optical constant distribution of the target surface can be obtained.
【００２９】[0029]
【発明の効果】本発明のエリプソメトリ装置によれば、
三方位角以上の偏光成分の一次元あるいは二次元計測結
果を基に反射光の偏光状態を求めるため、計測対象が不
均一なものである場合でも計測光束中の分布を計測で
き、薄膜の一次元的あるいは二次元的屈折率、光学定数
分布を求めることができる。また、三つ以上の一次元検
出素子あるいは二次元検出素子で構成された検出手段を
光線に対し入射角と同じ角度に設置することで、像の縦
横比を同一にして計測することができる。According to the ellipsometry apparatus of the present invention,
Since the polarization state of the reflected light is obtained based on the one-dimensional or two-dimensional measurement results of the polarization components at three or more azimuth angles, the distribution in the measurement light beam can be measured even when the measurement target is non-uniform, and the primary An original or two-dimensional refractive index and optical constant distribution can be obtained. In addition, by installing the detecting means composed of three or more one-dimensional detecting elements or two-dimensional detecting elements at the same angle as the incident angle with respect to the light beam, the image can be measured with the same aspect ratio.
【図１】本発明の実施の形態に係るエリプソメトリ装置
の構成を示す図。FIG. 1 is a diagram showing a configuration of an ellipsometry device according to an embodiment of the present invention.
【図２】本発明の実施の形態に係るエリプソメトリ装置
をアモルファス太陽電池製膜装置に適用した構成を示す
図。FIG. 2 is a diagram showing a configuration in which the ellipsometry device according to the embodiment of the present invention is applied to an amorphous solar cell film forming device.
【図３】従来例に係るエリプソメトリ装置の原理を表す
図。FIG. 3 is a diagram illustrating the principle of an ellipsometry device according to a conventional example.
１…試料 １１…光ファイバー ２０…コリメータレンズ ２１…偏光子 ３１…透明板 ３２…偏光ビームスプリッタ ４０〜４２…２次元受光器 ６０…コントローラー ６１…制御装置 DESCRIPTION OF SYMBOLS 1 ... Sample 11 ... Optical fiber 20 ... Collimator lens 21 ... Polarizer 31 ... Transparent plate 32 ... Polarization beam splitter 40-42 ... Two-dimensional light receiver 60 ... Controller 61 ... Control device
Claims (1)
とにより前記試料の状態を測定するエリプソメトリ装置
において、 前記反射光を偏光する二つ以上の偏光手段と、 この二つ以上の偏光手段にて三つ以上の方向へ偏光され
た前記反射光を検出する三つ以上の一次元検出素子ある
いは二次元検出素子で構成された検出手段と、 これら三つ以上の検出手段における三つ以上の方位角に
よる偏光成分の一次元あるいは二次元計測結果を基に、
前記反射光の偏光状態を計測する計測手段と、 を具備したことを特徴とするエリプソメトリ装置。1. An ellipsometer for measuring a state of a sample by measuring a polarization state of light reflected from the sample, comprising: two or more polarizing means for polarizing the reflected light; Means for detecting the reflected light polarized in three or more directions by means of three or more one-dimensional detection elements or two-dimensional detection elements; and three or more of these three or more detection means Based on the one-dimensional or two-dimensional measurement result of the polarization component depending on the azimuth angle,
An ellipsometry apparatus, comprising: a measuring unit that measures a polarization state of the reflected light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10158991A JPH11352054A (en) | 1998-06-08 | 1998-06-08 | Ellipsometry apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10158991A JPH11352054A (en) | 1998-06-08 | 1998-06-08 | Ellipsometry apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11352054A true JPH11352054A (en) | 1999-12-24 |
Family
ID=15683841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10158991A Pending JPH11352054A (en) | 1998-06-08 | 1998-06-08 | Ellipsometry apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11352054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003074967A1 (en) * | 2002-03-07 | 2003-09-12 | Takaoka Electric Mfg.Co., Ltd. | Polarization bearing detection type two-dimensional light reception timing detecting device and surface shape measuring device using it |
| JP2007533977A (en) * | 2004-03-11 | 2007-11-22 | アイコス・ビジョン・システムズ・ナムローゼ・フェンノートシャップ | Wavefront manipulation and improved 3D measurement method and apparatus |
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| WO1992014119A1 (en) * | 1991-01-30 | 1992-08-20 | Nkk Corporation | Ellipsometer and method of controlling coating thickness by use of ellipsometer |
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| JPH09166553A (en) * | 1995-10-09 | 1997-06-24 | Nkk Corp | Surface inspection equipment |
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| WO1992014119A1 (en) * | 1991-01-30 | 1992-08-20 | Nkk Corporation | Ellipsometer and method of controlling coating thickness by use of ellipsometer |
| JPH07294455A (en) * | 1994-04-28 | 1995-11-10 | Nkk Corp | Surface flaw detection method and apparatus |
| JPH09166553A (en) * | 1995-10-09 | 1997-06-24 | Nkk Corp | Surface inspection equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003074967A1 (en) * | 2002-03-07 | 2003-09-12 | Takaoka Electric Mfg.Co., Ltd. | Polarization bearing detection type two-dimensional light reception timing detecting device and surface shape measuring device using it |
| US7092093B2 (en) | 2002-03-07 | 2006-08-15 | Takaoka Electric Mfg. Co., Ltd. | Polarization bearing detection type two-dimensional light reception timing detecting device and surface form measuring device using the same |
| JP2007533977A (en) * | 2004-03-11 | 2007-11-22 | アイコス・ビジョン・システムズ・ナムローゼ・フェンノートシャップ | Wavefront manipulation and improved 3D measurement method and apparatus |
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