JPH11508418A - キャパシタンスに基づくチューニング可能な超小型機械共振器 - Google Patents
キャパシタンスに基づくチューニング可能な超小型機械共振器Info
- Publication number
- JPH11508418A JPH11508418A JP9503889A JP50388997A JPH11508418A JP H11508418 A JPH11508418 A JP H11508418A JP 9503889 A JP9503889 A JP 9503889A JP 50388997 A JP50388997 A JP 50388997A JP H11508418 A JPH11508418 A JP H11508418A
- Authority
- JP
- Japan
- Prior art keywords
- actuator
- electrodes
- finger
- resonator
- movable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 16
- 230000005686 electrostatic field Effects 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims 1
- 230000035882 stress Effects 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
- H03H9/02417—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor involving adjustment of the transducing gap
- H03H9/02425—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor involving adjustment of the transducing gap by electrostatically pulling the beam
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
- H02N1/008—Laterally driven motors, e.g. of the comb-drive type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
- H03H9/02417—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor involving adjustment of the transducing gap
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.超小型機械アクチュエータであって、上記超小型機械アクチュエータは、 第1の静止コンポーネントと、上記第1のコンポーネントに対して相対的に移 動可能な第2のコンポーネントとを有する超小型構造と、 上記第1のコンポーネント上に設けられた、所定の間隔を離れて置かれて実質 的に平行な第1の組の櫛形の電極の指状突起物と、 上記第2のコンポーネント上に設けられた、所定の間隔を離れて置かれて実質 的に平行な第2の組の櫛形の電極の指状突起物とを備え、上記第1及び第2の組 の上記指状突起物は、同一平面上にあり、それらの間に隙間を有して対向してか つ重ならない関係にあり、 上記第1及び第2の組の電極の間に接続されてそれらの間に静電界を発生する バイアス電源を備えた超小型機械アクチュエータ。 2.上記電源は変化可能である請求項1記載のアクチュエータ。 3.上記第2のコンポーネントは軸に沿って移動可能であり、上記隙間は上記軸 に平行である請求項2記載のアクチュエータ。 4.上記第1の組の上記電極の指状突起物は上記第2の上記電極の指状突起物か らオフセットされる請求項3記載のアクチュエータ。 5.上記第1の組の上記電極の指状突起物は上記第2の組の上記電極の指状突起 物と整列される請求項3記載のアクチュエータ。 5.上記第2のコンポーネントは単結晶シリコン基板における空胴内に設けられ る可動ビームであり、上記第1の組の電極の指状突起物は上記基板に一体化され 、上記第2の組の電極の指状突起物は上記可動ビームに一体化される請求項3記 載のアクチュエータ。 6.上記相対的に移動可能なコンポーネントは固有の機械スティフネスを有し、 上記電源は上記スティフネスを調整するように変化可能である請求項5記載のア クチュエータ。 7.上記ビームは動きのために、上記基板にしっかりと固定された少なくとも1 つのスプリングアームによって設けられ、上記可動ビーム、上記スプリングアー ム及び第2の組の電極は固有の共振周波数で移動可能であり、上記電源は上記共 振周波数を調整するように調整可能である請求項5記載のアクチュエータ。 8.上記第1の組の上記電極の指状突起物は上記第2の組の上記電極の指状突起 物と整列され、上記電源は上記共振周波数を増大するように変化可能である請求 項7記載のアクチュエータ。 9.上記第1の組の上記電極の指状突起物は上記第2の組の上記電極の指状突起 物からオフセットされ、上記電源は上記共振周波数を減少するように変化可能で ある請求項7記載のアクチュエータ。 10.上記電源は十分に高いバイアスを上記アクチュエータに提供して2つの井 戸の電位を形成する請求項9記載のアクチュエータ。 11.超小型電気機械共振器であって、上記超小型電気機械共振器は、 基板と、 軸に沿って上記基板に対して移動可能な超小型サイズの寸法を有する超小型機 械ビームと、 上記ビームと上記基板との間に接続されたスプリングアームとを備え、上記ス プリングアームと上記可動ビームは静止位置と固有の共振周波数とを有し、 第1及び第2の静電アクチュエータを備え、各アクチュエータは上記ビーム上 に設けられた指状電極の第1の組を有し、各アクチュエータは上記基板上に設け られた指状電極の第2の組を有し、各アクチュエータの上記指状電極の上記第1 及び第2の組はそれらの間に隙間を与えるように対向しかつ重ならず、 上記共振周波数を調整するように指状電極の各組に沿って接続された調整可能 なバイアス電圧を備えた超小型電気機械共振器。 12.各アクチュエータのための上記指状電極の上記第1の組の上記電極は、上 記指状電極の第2の組の対応する電極と整列される請求項11記載の共振器。 13.各アクチュエータに対する上記指状電極の上記第1の組の電極は、上記指 状電極の上記第2の組の対応する電極からオフセットされる請求項11記載の共 振器。 14.上記第1及び第2のアクチュエータは同一平面上にありかつ対称であり、 上記2つのアクチュエータは静止位置における上記ビーム上に正味の応力を提供 しない請求項11記載の共振器。 15.上記固有周波数での周波数又は上記固有周波数に近い周波数で上記ビーム を移動させる駆動手段をさらに含む請求項14記載の共振器。 16.上記隙間は上記軸に平行である請求項11記載の共振器。 17.上記隙間は上記軸に垂直である請求項11記載の共振器。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US494,024 | 1995-06-23 | ||
| US08/494,024 US5640133A (en) | 1995-06-23 | 1995-06-23 | Capacitance based tunable micromechanical resonators |
| PCT/US1996/010479 WO1997001221A1 (en) | 1995-06-23 | 1996-06-20 | Capacitance based tunable micromechanical resonators |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11508418A true JPH11508418A (ja) | 1999-07-21 |
| JPH11508418A5 JPH11508418A5 (ja) | 2004-08-05 |
| JP4011617B2 JP4011617B2 (ja) | 2007-11-21 |
Family
ID=23962701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50388997A Expired - Lifetime JP4011617B2 (ja) | 1995-06-23 | 1996-06-20 | キャパシタンスに基づくチューニング可能な超小型機械共振器 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5640133A (ja) |
| EP (1) | EP0834218B1 (ja) |
| JP (1) | JP4011617B2 (ja) |
| AT (1) | ATE425582T1 (ja) |
| CA (1) | CA2224402C (ja) |
| DE (1) | DE69637863D1 (ja) |
| DK (1) | DK0834218T3 (ja) |
| ES (1) | ES2321889T3 (ja) |
| PT (1) | PT834218E (ja) |
| WO (1) | WO1997001221A1 (ja) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004032132A (ja) * | 2002-06-24 | 2004-01-29 | Seiko Epson Corp | 振動子、マイクロレゾネーター、弾性表面波素子、薄膜バルク振動子、電子機器およびそれらの製造方法 |
| JP2004112378A (ja) * | 2002-09-19 | 2004-04-08 | Nec Corp | フィルタ、複合フィルタ、それらを搭載したフィルタ実装体、集積回路チップ、電子機器およびそれらの周波数特性変更方法 |
| WO2004032320A1 (ja) * | 2002-10-03 | 2004-04-15 | Sharp Kabushiki Kaisha | マイクロ共振装置、マイクロフィルタ装置、マイクロ発振器および無線通信機器 |
| JP2005510108A (ja) * | 2001-11-15 | 2005-04-14 | サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク(セエヌエールエス) | 実質的に平面的な微細機械構造及び相当する電気機械的共振器の二つの機械要素のギャップ調整に対する方法 |
| JP2005533400A (ja) * | 2001-09-28 | 2005-11-04 | インテル・コーポレーション | 極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造 |
| JP2008504771A (ja) * | 2004-07-01 | 2008-02-14 | コミツサリア タ レネルジー アトミーク | 変形量が大きな複合型微小共振器 |
| JP2008537658A (ja) * | 2005-03-31 | 2008-09-18 | エスティーマイクロエレクトロニクス エス.アール.エル. | 共振微小電気機械システムの共振周波数を制御する装置 |
| JP2010011134A (ja) * | 2008-06-27 | 2010-01-14 | Seiko Instruments Inc | 共振周波数可変mems振動子 |
| JP2010028792A (ja) * | 2008-06-18 | 2010-02-04 | Seiko Epson Corp | 共振回路、発振回路、フィルタ回路及び電子装置 |
| JP2010056764A (ja) * | 2008-08-27 | 2010-03-11 | Seiko Instruments Inc | Mems振動子 |
| JP2011041179A (ja) * | 2009-08-18 | 2011-02-24 | Nippon Telegr & Teleph Corp <Ntt> | 微小共振子およびその製造方法 |
| JP2013519230A (ja) * | 2010-02-03 | 2013-05-23 | ハリス コーポレイション | 高精度memsに基づくバラクタ |
| JP2020076749A (ja) * | 2018-10-26 | 2020-05-21 | ブランパン・エス アー | 少なくとも1つの音響放射膜を備えるストライク携行式時計又はミュージカル携行式時計、及び音響放射膜を製造する方法 |
Families Citing this family (155)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6316796B1 (en) | 1995-05-24 | 2001-11-13 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| US6084257A (en) * | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| DE19539049A1 (de) * | 1995-10-20 | 1997-04-24 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Coriolis-Drehratensensors |
| US5959516A (en) * | 1998-01-08 | 1999-09-28 | Rockwell Science Center, Llc | Tunable-trimmable micro electro mechanical system (MEMS) capacitor |
| US6124765A (en) * | 1997-10-24 | 2000-09-26 | Stmicroelectronics, Inc. | Integrated released beam oscillator and associated methods |
| US6058778A (en) | 1997-10-24 | 2000-05-09 | Stmicroelectronics, Inc. | Integrated sensor having plurality of released beams for sensing acceleration |
| US5917226A (en) | 1997-10-24 | 1999-06-29 | Stmicroelectronics, Inc. | Integrated released beam, thermo-mechanical sensor for sensing temperature variations and associated methods |
| US6028343A (en) | 1997-10-24 | 2000-02-22 | Stmicroelectronics, Inc. | Integrated released beam sensor for sensing acceleration and associated methods |
| US6116756A (en) * | 1997-12-12 | 2000-09-12 | Xerox Corporation | Monolithic scanning light emitting devices |
| US6567448B1 (en) | 1997-12-12 | 2003-05-20 | Xerox Corporation | Scanning III-V compound light emitters integrated with Si-based actuators |
| US6180428B1 (en) | 1997-12-12 | 2001-01-30 | Xerox Corporation | Monolithic scanning light emitting devices using micromachining |
| US6054335A (en) * | 1997-12-12 | 2000-04-25 | Xerox Corporation | Fabrication of scanning III-V compound light emitters integrated with Si-based actuators |
| DE19809742A1 (de) * | 1998-03-06 | 1999-09-16 | Bosch Gmbh Robert | Magnetfeldsensor |
| US6356602B1 (en) * | 1998-05-04 | 2002-03-12 | Trimble Navigation Limited | RF integrated circuit for downconverting a GPS signal |
| DE19821527A1 (de) * | 1998-05-13 | 1999-12-02 | Siemens Ag | Schwingkreis |
| JP2000011556A (ja) * | 1998-06-16 | 2000-01-14 | Alps Electric Co Ltd | マイクロアクチュエータ及び磁気ヘッド装置並びに磁気記録装置 |
| US7098871B1 (en) | 1998-08-05 | 2006-08-29 | Microvision, Inc. | Optical scanning system with correction |
| DE19959128B4 (de) * | 1998-12-08 | 2004-02-12 | Trw Inc., Lyndhurst | Kapazitiver Gewichtssensor |
| US6091537A (en) * | 1998-12-11 | 2000-07-18 | Xerox Corporation | Electro-actuated microlens assemblies |
| KR100459887B1 (ko) * | 1999-01-11 | 2004-12-03 | 삼성전자주식회사 | 삼차원 빗살 가진 구조물 및 이를 채용한 관성 감지 센서와 액츄 |
| US6249073B1 (en) * | 1999-01-14 | 2001-06-19 | The Regents Of The University Of Michigan | Device including a micromechanical resonator having an operating frequency and method of extending same |
| US6424074B2 (en) | 1999-01-14 | 2002-07-23 | The Regents Of The University Of Michigan | Method and apparatus for upconverting and filtering an information signal utilizing a vibrating micromechanical device |
| US6593831B2 (en) | 1999-01-14 | 2003-07-15 | The Regents Of The University Of Michigan | Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus |
| US6566786B2 (en) | 1999-01-14 | 2003-05-20 | The Regents Of The University Of Michigan | Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus |
| US6713938B2 (en) | 1999-01-14 | 2004-03-30 | The Regents Of The University Of Michigan | Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator |
| US6600252B2 (en) * | 1999-01-14 | 2003-07-29 | The Regents Of The University Of Michigan | Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices |
| US6577040B2 (en) | 1999-01-14 | 2003-06-10 | The Regents Of The University Of Michigan | Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices |
| US6329738B1 (en) | 1999-03-30 | 2001-12-11 | Massachusetts Institute Of Technology | Precision electrostatic actuation and positioning |
| US6724125B2 (en) | 1999-03-30 | 2004-04-20 | Massachusetts Institute Of Technology | Methods and apparatus for diffractive optical processing using an actuatable structure |
| US6384406B1 (en) | 1999-08-05 | 2002-05-07 | Microvision, Inc. | Active tuning of a torsional resonant structure |
| US6795221B1 (en) | 1999-08-05 | 2004-09-21 | Microvision, Inc. | Scanned display with switched feeds and distortion correction |
| US6924476B2 (en) * | 2002-11-25 | 2005-08-02 | Microvision, Inc. | Resonant beam scanner with raster pinch compensation |
| US6245590B1 (en) | 1999-08-05 | 2001-06-12 | Microvision Inc. | Frequency tunable resonant scanner and method of making |
| US6882462B2 (en) * | 2002-11-01 | 2005-04-19 | Microvision, Inc. | Resonant scanner with asymmetric mass distribution |
| US6362912B1 (en) | 1999-08-05 | 2002-03-26 | Microvision, Inc. | Scanned imaging apparatus with switched feeds |
| US6515781B2 (en) | 1999-08-05 | 2003-02-04 | Microvision, Inc. | Scanned imaging apparatus with switched feeds |
| US7262765B2 (en) * | 1999-08-05 | 2007-08-28 | Microvision, Inc. | Apparatuses and methods for utilizing non-ideal light sources |
| US6285489B1 (en) | 1999-08-05 | 2001-09-04 | Microvision Inc. | Frequency tunable resonant scanner with auxiliary arms |
| US6445362B1 (en) | 1999-08-05 | 2002-09-03 | Microvision, Inc. | Scanned display with variation compensation |
| US6653621B2 (en) * | 2001-03-23 | 2003-11-25 | Microvision, Inc. | Frequency tunable resonant scanner and method of making |
| US6654158B2 (en) | 2001-04-20 | 2003-11-25 | Microvision, Inc. | Frequency tunable resonant scanner with auxiliary arms |
| US6525310B2 (en) * | 1999-08-05 | 2003-02-25 | Microvision, Inc. | Frequency tunable resonant scanner |
| US6256131B1 (en) | 1999-08-05 | 2001-07-03 | Microvision Inc. | Active tuning of a torsional resonant structure |
| US6433907B1 (en) | 1999-08-05 | 2002-08-13 | Microvision, Inc. | Scanned display with plurality of scanning assemblies |
| US6331909B1 (en) | 1999-08-05 | 2001-12-18 | Microvision, Inc. | Frequency tunable resonant scanner |
| US6661393B2 (en) | 1999-08-05 | 2003-12-09 | Microvision, Inc. | Scanned display with variation compensation |
| US6215644B1 (en) | 1999-09-09 | 2001-04-10 | Jds Uniphase Inc. | High frequency tunable capacitors |
| US6373682B1 (en) | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
| US6496351B2 (en) | 1999-12-15 | 2002-12-17 | Jds Uniphase Inc. | MEMS device members having portions that contact a substrate and associated methods of operating |
| US6229684B1 (en) | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
| US6364460B1 (en) | 2000-06-13 | 2002-04-02 | Chad R. Sager | Liquid delivery system |
| US20020070816A1 (en) * | 2000-08-24 | 2002-06-13 | Wan-Thai Hsu | Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced thereby |
| US6485273B1 (en) | 2000-09-01 | 2002-11-26 | Mcnc | Distributed MEMS electrostatic pumping devices |
| US6590267B1 (en) | 2000-09-14 | 2003-07-08 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
| US6377438B1 (en) * | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
| US6396620B1 (en) | 2000-10-30 | 2002-05-28 | Mcnc | Electrostatically actuated electromagnetic radiation shutter |
| US6767614B1 (en) * | 2000-12-19 | 2004-07-27 | Wolfgang M. J. Hofmann | Multiple-level actuators and clamping devices |
| US6418006B1 (en) | 2000-12-20 | 2002-07-09 | The Board Of Trustees Of The University Of Illinois | Wide tuning range variable MEMs capacitor |
| US6568264B2 (en) * | 2001-02-23 | 2003-05-27 | Charles E. Heger | Wireless swimming pool water level system |
| US20020167695A1 (en) * | 2001-03-02 | 2002-11-14 | Senturia Stephen D. | Methods and apparatus for diffractive optical processing using an actuatable structure |
| WO2002073673A1 (en) * | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
| AU2002303933A1 (en) | 2001-05-31 | 2002-12-09 | Rochester Institute Of Technology | Fluidic valves, agitators, and pumps and methods thereof |
| US6509620B2 (en) * | 2001-05-31 | 2003-01-21 | Hewlett-Packard Company | Flexure coupling block for motion sensor |
| US6570468B2 (en) | 2001-06-29 | 2003-05-27 | Intel Corporation | Resonator frequency correction by modifying support structures |
| US6549099B2 (en) * | 2001-06-29 | 2003-04-15 | Hewlett-Packard Company | Electrically-coupled mechanical band-pass filter |
| US6643165B2 (en) * | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
| US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
| US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
| US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
| US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US7566478B2 (en) | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
| US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
| US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
| KR100434541B1 (ko) * | 2001-08-24 | 2004-06-05 | 삼성전자주식회사 | 광스캐너 및 그 제조방법 |
| US6624726B2 (en) * | 2001-08-31 | 2003-09-23 | Motorola, Inc. | High Q factor MEMS resonators |
| US6717488B2 (en) * | 2001-09-13 | 2004-04-06 | Nth Tech Corporation | Resonator with a member having an embedded charge and a method of making thereof |
| US6842009B2 (en) * | 2001-09-13 | 2005-01-11 | Nth Tech Corporation | Biohazard sensing system and methods thereof |
| US7023402B2 (en) * | 2001-09-21 | 2006-04-04 | Microvision, Inc. | Scanned display with pinch, timing, and distortion correction |
| US7046410B2 (en) | 2001-10-11 | 2006-05-16 | Polychromix, Inc. | Actuatable diffractive optical processor |
| US7378775B2 (en) | 2001-10-26 | 2008-05-27 | Nth Tech Corporation | Motion based, electrostatic power source and methods thereof |
| US7211923B2 (en) * | 2001-10-26 | 2007-05-01 | Nth Tech Corporation | Rotational motion based, electrostatic power source and methods thereof |
| US6621681B2 (en) | 2001-12-05 | 2003-09-16 | Memx, Inc. | Low voltage control of MEM actuators |
| US6611168B1 (en) | 2001-12-19 | 2003-08-26 | Analog Devices, Inc. | Differential parametric amplifier with physically-coupled electrically-isolated micromachined structures |
| US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
| JP4169516B2 (ja) * | 2002-02-07 | 2008-10-22 | コニカミノルタホールディングス株式会社 | 光スイッチ |
| KR100473524B1 (ko) * | 2002-03-21 | 2005-03-09 | 한국과학기술원 | 비선형 기계적 변조기 및 이를 이용한 구동장치 |
| US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6686639B1 (en) * | 2002-09-30 | 2004-02-03 | Innovative Technology Licensing, Llc | High performance MEMS device fabricatable with high yield |
| US7560136B2 (en) | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6987432B2 (en) * | 2003-04-16 | 2006-01-17 | Robert Bosch Gmbh | Temperature compensation for silicon MEMS resonator |
| US7085122B2 (en) * | 2003-05-21 | 2006-08-01 | The Regents Of The University Of California | MEMS tunable capacitor based on angular vertical comb drives |
| US7095295B1 (en) | 2003-05-21 | 2006-08-22 | Sandia Corporation | Multi-tunable microelectromechanical system (MEMS) resonators |
| US6822929B1 (en) | 2003-06-25 | 2004-11-23 | Sandia Corporation | Micro acoustic spectrum analyzer |
| US6870444B1 (en) * | 2003-08-28 | 2005-03-22 | Motorola, Inc. | Electromechanical resonator and method of operating same |
| US7217582B2 (en) | 2003-08-29 | 2007-05-15 | Rochester Institute Of Technology | Method for non-damaging charge injection and a system thereof |
| US7287328B2 (en) | 2003-08-29 | 2007-10-30 | Rochester Institute Of Technology | Methods for distributed electrode injection |
| US20050073078A1 (en) * | 2003-10-03 | 2005-04-07 | Markus Lutz | Frequency compensated oscillator design for process tolerances |
| FI20040162A7 (fi) * | 2004-02-03 | 2005-08-04 | Nokia Oyj | Viitevärähtelijän taajuuden vakauttaminen |
| US8581308B2 (en) | 2004-02-19 | 2013-11-12 | Rochester Institute Of Technology | High temperature embedded charge devices and methods thereof |
| EP1789707A2 (en) | 2004-07-23 | 2007-05-30 | AFA Controls, LLC | Methods of operating microvalve assemblies and related structures and related devices |
| WO2006083482A2 (en) * | 2005-01-07 | 2006-08-10 | Trustees Of Boston University | Nanomechanical oscillator |
| US7345866B1 (en) * | 2005-05-13 | 2008-03-18 | Hrl Laboratories, Llc | Continuously tunable RF MEMS capacitor with ultra-wide tuning range |
| FR2888394A1 (fr) * | 2005-07-08 | 2007-01-12 | Commissariat Energie Atomique | Dispositif capacitif a volume capacitif optimise |
| US20070194239A1 (en) * | 2006-01-31 | 2007-08-23 | Mcallister Abraham | Apparatus and method providing a hand-held spectrometer |
| EP1890305A1 (en) * | 2006-08-18 | 2008-02-20 | Interuniversitair Microelektronica Centrum Vzw | MEMS Variable capacitor and method for producing same |
| EP1890306B1 (en) * | 2006-08-18 | 2010-12-08 | Imec | MEMS Variable capacitor and method for producing same |
| US7782594B2 (en) | 2006-08-18 | 2010-08-24 | Imec | MEMS variable capacitor and method for producing the same |
| US7859365B2 (en) * | 2006-12-13 | 2010-12-28 | Georgia Tech Research Corporation | Low frequency process-variation-insensitive temperature-stable micromechanical resonators |
| US7545237B2 (en) * | 2006-12-20 | 2009-06-09 | Sitime Inc. | Serrated MEMS resonators |
| US7639105B2 (en) * | 2007-01-19 | 2009-12-29 | Georgia Tech Research Corporation | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators |
| US7812692B2 (en) * | 2007-06-01 | 2010-10-12 | Georgia Tech Research Corporation | Piezo-on-diamond resonators and resonator systems |
| US9099248B2 (en) | 2007-06-29 | 2015-08-04 | Corporation for National Research Iniatives | Variable capacitor tuned using laser micromachining |
| US7832948B1 (en) | 2007-09-13 | 2010-11-16 | Tessera MEMS Technologies, Inc. | Impulse actuated MEMS devices |
| US8772999B2 (en) | 2007-10-11 | 2014-07-08 | Sand 9, Inc. | Signal amplification by hierarchal resonating structures |
| WO2009148677A2 (en) * | 2008-03-11 | 2009-12-10 | The Regents Of The University Of California | Microelectromechanical system (mems) resonant switches and applications for power converters and amplifiers |
| US7990229B2 (en) * | 2008-04-01 | 2011-08-02 | Sand9, Inc. | Methods and devices for compensating a signal using resonators |
| US8044736B2 (en) * | 2008-04-29 | 2011-10-25 | Sand9, Inc. | Timing oscillators and related methods |
| US8476809B2 (en) | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
| US8044737B2 (en) * | 2008-04-29 | 2011-10-25 | Sand9, Inc. | Timing oscillators and related methods |
| US8410868B2 (en) | 2009-06-04 | 2013-04-02 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
| CN102067442B (zh) * | 2008-06-18 | 2014-07-23 | Nxp股份有限公司 | 用于滤波和混合的mems谐振器 |
| US7999635B1 (en) | 2008-07-29 | 2011-08-16 | Silicon Laboratories Inc. | Out-of plane MEMS resonator with static out-of-plane deflection |
| US8111108B2 (en) * | 2008-07-29 | 2012-02-07 | Sand9, Inc. | Micromechanical resonating devices and related methods |
| US7888843B2 (en) * | 2008-09-10 | 2011-02-15 | Georgia Tech Research Corporation | Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein |
| US8049579B2 (en) * | 2008-10-30 | 2011-11-01 | Hewlett-Packard Development Company, L.P. | Resonator having a stator coupled to three stator voltages |
| US7939990B2 (en) * | 2009-01-30 | 2011-05-10 | Integrated Device Technology, Inc. | Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations |
| US20100194246A1 (en) * | 2009-01-30 | 2010-08-05 | Integrated Device Technology, Inc. | Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations |
| US8446078B2 (en) * | 2009-03-26 | 2013-05-21 | Sand 9, Inc. | Mechanical resonating structures and methods |
| US9048811B2 (en) | 2009-03-31 | 2015-06-02 | Sand 9, Inc. | Integration of piezoelectric materials with substrates |
| US8381378B2 (en) * | 2009-06-19 | 2013-02-26 | Georgia Tech Research Corporation | Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation |
| US8106724B1 (en) | 2009-07-23 | 2012-01-31 | Integrated Device Technologies, Inc. | Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor |
| US8134277B2 (en) * | 2009-12-15 | 2012-03-13 | Moidu Abdul Jaleel K | Electrostatic comb actuator |
| US20120162932A1 (en) * | 2010-12-22 | 2012-06-28 | Contreras John T | Power and ground planes having modified resonance frequencies |
| US8501515B1 (en) | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
| US8610336B1 (en) | 2011-09-30 | 2013-12-17 | Integrated Device Technology Inc | Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies |
| US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
| US9299910B1 (en) | 2012-05-17 | 2016-03-29 | Analog Devices, Inc. | Resonator anchors and related apparatus and methods |
| US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
| US9034754B2 (en) | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
| US8415767B1 (en) * | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
| US8383506B1 (en) * | 2012-07-06 | 2013-02-26 | LuxVue Technology Corporation | Method of forming a compliant monopolar micro device transfer head with silicon electrode |
| WO2014008111A1 (en) * | 2012-07-06 | 2014-01-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
| US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
| US8415768B1 (en) * | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
| US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
| US9255001B2 (en) | 2012-12-10 | 2016-02-09 | LuxVue Technology Corporation | Micro device transfer head array with metal electrodes |
| US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| US9954513B1 (en) | 2012-12-21 | 2018-04-24 | Analog Devices, Inc. | Methods and apparatus for anchoring resonators |
| US9634227B1 (en) | 2013-03-06 | 2017-04-25 | Analog Devices, Inc. | Suppression of spurious modes of vibration for resonators and related apparatus and methods |
| ES2952036T3 (es) | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
| KR101724488B1 (ko) * | 2015-12-11 | 2017-04-07 | 현대자동차 주식회사 | Mems 공진기 |
| KR102298484B1 (ko) | 2016-01-15 | 2021-09-03 | 로히니, 엘엘씨. | 장치 상의 커버를 통해 후면 발광하는 장치 및 방법 |
| DE102018220936A1 (de) | 2018-12-04 | 2020-06-04 | Robert Bosch Gmbh | Verfahren zur Überprüfung eines Sensorwertes eines MEMS-Sensors |
Family Cites Families (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL136155C (ja) * | 1966-09-09 | |||
| US3672985A (en) * | 1970-05-05 | 1972-06-27 | Westinghouse Electric Corp | Conductor elements spaced from microelectronic component surface and methods of making the same |
| US3835338A (en) * | 1973-08-23 | 1974-09-10 | A Martin | Electrically controlled ultra-micromanipulator |
| US4437226A (en) * | 1981-03-02 | 1984-03-20 | Rockwell International Corporation | Process for producing NPN type lateral transistor with minimal substrate operation interference |
| US4381672A (en) * | 1981-03-04 | 1983-05-03 | The Bendix Corporation | Vibrating beam rotation sensor |
| CH642461A5 (fr) * | 1981-07-02 | 1984-04-13 | Centre Electron Horloger | Accelerometre. |
| US4472239A (en) * | 1981-10-09 | 1984-09-18 | Honeywell, Inc. | Method of making semiconductor device |
| JPS5889859A (ja) * | 1981-11-24 | 1983-05-28 | Oki Electric Ind Co Ltd | シリコンウエ−ハ上へのマイクロ片持ち梁の作製法 |
| US4522682A (en) * | 1982-06-21 | 1985-06-11 | Rockwell International Corporation | Method for producing PNP type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom |
| US4867842A (en) * | 1982-09-30 | 1989-09-19 | Honeywell Inc. | Method of making slotted diaphragm semiconductor devices |
| US4553436A (en) * | 1982-11-09 | 1985-11-19 | Texas Instruments Incorporated | Silicon accelerometer |
| US4783237A (en) * | 1983-12-01 | 1988-11-08 | Harry E. Aine | Solid state transducer and method of making same |
| FR2558263B1 (fr) * | 1984-01-12 | 1986-04-25 | Commissariat Energie Atomique | Accelerometre directif et son procede de fabrication par microlithographie |
| JPS6197572A (ja) * | 1984-10-19 | 1986-05-16 | Nissan Motor Co Ltd | 半導体加速度センサの製造方法 |
| JPS61135151A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体記憶装置 |
| FR2580389B2 (fr) * | 1985-04-16 | 1989-03-03 | Sfena | Accelerometre micro-usine a rappel electrostatique |
| DE3515349A1 (de) * | 1985-04-27 | 1986-10-30 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Elektrischer geber zur messung mechanischer groessen |
| US4685198A (en) * | 1985-07-25 | 1987-08-11 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing isolated semiconductor devices |
| US4736629A (en) * | 1985-12-20 | 1988-04-12 | Silicon Designs, Inc. | Micro-miniature accelerometer |
| JPS62232171A (ja) * | 1986-04-02 | 1987-10-12 | Nissan Motor Co Ltd | 半導体加速度センサ |
| US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
| US4682503A (en) * | 1986-05-16 | 1987-07-28 | Honeywell Inc. | Microscopic size, thermal conductivity type, air or gas absolute pressure sensor |
| JPH0779133B2 (ja) * | 1986-06-12 | 1995-08-23 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US4750363A (en) * | 1986-06-27 | 1988-06-14 | Sundstrand Data Control, Inc. | Temperature compensation of an accelerometer |
| FR2604791B1 (fr) * | 1986-10-02 | 1988-11-25 | Commissariat Energie Atomique | Procedes de fabrication d'une jauge piezoresistive et d'un accelerometre comportant une telle jauge |
| JPS63136982A (ja) * | 1986-11-28 | 1988-06-09 | Canon Inc | 静電アクチユエ−タ |
| US4746621A (en) * | 1986-12-05 | 1988-05-24 | Cornell Research Foundation, Inc. | Planar tungsten interconnect |
| US4740410A (en) * | 1987-05-28 | 1988-04-26 | The Regents Of The University Of California | Micromechanical elements and methods for their fabrication |
| US4851080A (en) * | 1987-06-29 | 1989-07-25 | Massachusetts Institute Of Technology | Resonant accelerometer |
| US4783821A (en) * | 1987-11-25 | 1988-11-08 | The Regents Of The University Of California | IC processed piezoelectric microphone |
| DE3879186D1 (de) * | 1988-04-19 | 1993-04-15 | Ibm | Verfahren zur herstellung von integrierten halbleiterstrukturen welche feldeffekttransistoren mit kanallaengen im submikrometerbereich enthalten. |
| US4945765A (en) * | 1988-08-31 | 1990-08-07 | Kearfott Guidance & Navigation Corp. | Silicon micromachined accelerometer |
| JPH0623782B2 (ja) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | 静電容量式加速度センサ及び半導体圧力センサ |
| US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
| US5072288A (en) * | 1989-02-21 | 1991-12-10 | Cornell Research Foundation, Inc. | Microdynamic release structure |
| US5149673A (en) * | 1989-02-21 | 1992-09-22 | Cornell Research Foundation, Inc. | Selective chemical vapor deposition of tungsten for microdynamic structures |
| US5045152A (en) * | 1989-03-06 | 1991-09-03 | Ford Motor Company | Force transducer etched from silicon |
| US4981552A (en) * | 1989-04-06 | 1991-01-01 | Ford Motor Company | Method for fabricating a silicon accelerometer responsive to three orthogonal force components |
| US5228341A (en) * | 1989-10-18 | 1993-07-20 | Hitachi, Ltd. | Capacitive acceleration detector having reduced mass portion |
| US5126812A (en) * | 1990-02-14 | 1992-06-30 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical accelerometer |
| US5314572A (en) * | 1990-08-17 | 1994-05-24 | Analog Devices, Inc. | Method for fabricating microstructures |
| WO1992003740A1 (en) * | 1990-08-17 | 1992-03-05 | Analog Devices, Inc. | Monolithic accelerometer |
| US5068203A (en) * | 1990-09-04 | 1991-11-26 | Delco Electronics Corporation | Method for forming thin silicon membrane or beam |
| US5249465A (en) * | 1990-12-11 | 1993-10-05 | Motorola, Inc. | Accelerometer utilizing an annular mass |
| US5205171A (en) * | 1991-01-11 | 1993-04-27 | Northrop Corporation | Miniature silicon accelerometer and method |
| US5235187A (en) * | 1991-05-14 | 1993-08-10 | Cornell Research Foundation | Methods of fabricating integrated, aligned tunneling tip pairs |
| US5175521A (en) * | 1991-05-31 | 1992-12-29 | Hughes Aircraft Company | Miniature dynamically tunable microwave and millimeter wave device |
| US5121180A (en) * | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
| US5198390A (en) * | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
| US5357803A (en) * | 1992-04-08 | 1994-10-25 | Rochester Institute Of Technology | Micromachined microaccelerometer for measuring acceleration along three axes |
| US5179499A (en) * | 1992-04-14 | 1993-01-12 | Cornell Research Foundation, Inc. | Multi-dimensional precision micro-actuator |
| US5353641A (en) * | 1992-08-07 | 1994-10-11 | Ford Motor Company | Digital capacitive accelerometer |
| AU5869994A (en) * | 1992-12-11 | 1994-07-04 | Regents Of The University Of California, The | Microelectromechanical signal processors |
| US5491604A (en) * | 1992-12-11 | 1996-02-13 | The Regents Of The University Of California | Q-controlled microresonators and tunable electronic filters using such resonators |
| US5399415A (en) * | 1993-02-05 | 1995-03-21 | Cornell Research Foundation, Inc. | Isolated tungsten microelectromechanical structures |
| US5610335A (en) * | 1993-05-26 | 1997-03-11 | Cornell Research Foundation | Microelectromechanical lateral accelerometer |
-
1995
- 1995-06-23 US US08/494,024 patent/US5640133A/en not_active Expired - Lifetime
-
1996
- 1996-06-20 EP EP96923321A patent/EP0834218B1/en not_active Expired - Lifetime
- 1996-06-20 PT PT96923321T patent/PT834218E/pt unknown
- 1996-06-20 JP JP50388997A patent/JP4011617B2/ja not_active Expired - Lifetime
- 1996-06-20 CA CA002224402A patent/CA2224402C/en not_active Expired - Lifetime
- 1996-06-20 DE DE69637863T patent/DE69637863D1/de not_active Expired - Lifetime
- 1996-06-20 ES ES96923321T patent/ES2321889T3/es not_active Expired - Lifetime
- 1996-06-20 AT AT96923321T patent/ATE425582T1/de active
- 1996-06-20 DK DK96923321T patent/DK0834218T3/da active
- 1996-06-20 WO PCT/US1996/010479 patent/WO1997001221A1/en not_active Ceased
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005533400A (ja) * | 2001-09-28 | 2005-11-04 | インテル・コーポレーション | 極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造 |
| JP2005510108A (ja) * | 2001-11-15 | 2005-04-14 | サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク(セエヌエールエス) | 実質的に平面的な微細機械構造及び相当する電気機械的共振器の二つの機械要素のギャップ調整に対する方法 |
| JP2004032132A (ja) * | 2002-06-24 | 2004-01-29 | Seiko Epson Corp | 振動子、マイクロレゾネーター、弾性表面波素子、薄膜バルク振動子、電子機器およびそれらの製造方法 |
| JP2004112378A (ja) * | 2002-09-19 | 2004-04-08 | Nec Corp | フィルタ、複合フィルタ、それらを搭載したフィルタ実装体、集積回路チップ、電子機器およびそれらの周波数特性変更方法 |
| WO2004032320A1 (ja) * | 2002-10-03 | 2004-04-15 | Sharp Kabushiki Kaisha | マイクロ共振装置、マイクロフィルタ装置、マイクロ発振器および無線通信機器 |
| JPWO2004032320A1 (ja) * | 2002-10-03 | 2006-02-02 | シャープ株式会社 | マイクロ共振装置、マイクロフィルタ装置、マイクロ発振器および無線通信機器 |
| JP2008504771A (ja) * | 2004-07-01 | 2008-02-14 | コミツサリア タ レネルジー アトミーク | 変形量が大きな複合型微小共振器 |
| JP2008537658A (ja) * | 2005-03-31 | 2008-09-18 | エスティーマイクロエレクトロニクス エス.アール.エル. | 共振微小電気機械システムの共振周波数を制御する装置 |
| JP2010028792A (ja) * | 2008-06-18 | 2010-02-04 | Seiko Epson Corp | 共振回路、発振回路、フィルタ回路及び電子装置 |
| JP2010011134A (ja) * | 2008-06-27 | 2010-01-14 | Seiko Instruments Inc | 共振周波数可変mems振動子 |
| JP2010056764A (ja) * | 2008-08-27 | 2010-03-11 | Seiko Instruments Inc | Mems振動子 |
| JP2011041179A (ja) * | 2009-08-18 | 2011-02-24 | Nippon Telegr & Teleph Corp <Ntt> | 微小共振子およびその製造方法 |
| JP2013519230A (ja) * | 2010-02-03 | 2013-05-23 | ハリス コーポレイション | 高精度memsに基づくバラクタ |
| JP2020076749A (ja) * | 2018-10-26 | 2020-05-21 | ブランパン・エス アー | 少なくとも1つの音響放射膜を備えるストライク携行式時計又はミュージカル携行式時計、及び音響放射膜を製造する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2224402A1 (en) | 1997-01-09 |
| US5640133A (en) | 1997-06-17 |
| CA2224402C (en) | 2008-06-17 |
| DE69637863D1 (de) | 2009-04-23 |
| EP0834218B1 (en) | 2009-03-11 |
| EP0834218A1 (en) | 1998-04-08 |
| PT834218E (pt) | 2009-05-06 |
| EP0834218A4 (en) | 2002-04-10 |
| ATE425582T1 (de) | 2009-03-15 |
| DK0834218T3 (da) | 2009-04-20 |
| WO1997001221A1 (en) | 1997-01-09 |
| ES2321889T3 (es) | 2009-06-12 |
| JP4011617B2 (ja) | 2007-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH11508418A (ja) | キャパシタンスに基づくチューニング可能な超小型機械共振器 | |
| US5914553A (en) | Multistable tunable micromechanical resonators | |
| JP4538503B2 (ja) | 共振器 | |
| DeMartini et al. | Linear and nonlinear tuning of parametrically excited MEMS oscillators | |
| US9300227B2 (en) | Monolithic body MEMS devices | |
| Adams et al. | Capacitance based tunable resonators | |
| Lee et al. | A triangular electrostatic comb array for micromechanical resonant frequency tuning | |
| EP2066015A2 (en) | Microstructure with enlarged mass and electrode area for kinetic to electrical energy conversion | |
| EP2302712A1 (en) | Method for resonance frequency tuning of micromachined structures | |
| KR101534351B1 (ko) | Mems 장치 및 방법 | |
| Adams et al. | Capacitance based tunable micromechanical resonators | |
| KR20100118121A (ko) | 공진기 및 공진기 어레이 | |
| US7355318B2 (en) | Micromachined device utilizing electrostatic comb drives to filter mechanical vibrations | |
| EP2539999B1 (en) | Improved micromechanical resonator | |
| JP2000055670A (ja) | 振動式検出器 | |
| US11846651B2 (en) | Electrostatic actuator and physical quantity sensor | |
| Lee et al. | A surface-micromachined tunable microgyroscope | |
| Lee et al. | A frequency-tunable microactuator with a varied comb-width profile | |
| JP4995675B2 (ja) | 振動子デバイス及び発振器 | |
| Liu et al. | Design of resonant device using microelectromechanical comb structure | |
| Usuda | Frequency-tunable electrostatically driven torsional resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061010 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060929 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070110 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070226 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20070410 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070807 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070906 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100914 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110914 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110914 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120914 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130914 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |