JPH1167672A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH1167672A JPH1167672A JP22470097A JP22470097A JPH1167672A JP H1167672 A JPH1167672 A JP H1167672A JP 22470097 A JP22470097 A JP 22470097A JP 22470097 A JP22470097 A JP 22470097A JP H1167672 A JPH1167672 A JP H1167672A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- platter
- temperature
- measured
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 230000005855 radiation Effects 0.000 claims abstract description 43
- 239000012495 reaction gas Substances 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000035515 penetration Effects 0.000 abstract 1
- 238000009529 body temperature measurement Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- -1 gallium nitride compound Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、たとえばＭＯＣＶ
Ｄ（有機金属化学気相成長）法により基板上に半導体層
をエピタキシャル成長する場合に、基板の温度を正確に
制御しながらエピタキシャル成長をすることができる半
導体装置の製法に関する。さらに詳しくは、半導体層の
積層によっても測定温度の誤差が生じないように温度を
測定しながらエピタキシャル成長をすることができ、さ
らにバッチ処理を重ねていっても再現性よく温度制御が
できる半導体装置の製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device capable of performing epitaxial growth while accurately controlling the temperature of a substrate when a semiconductor layer is epitaxially grown on a substrate by a metal organic chemical vapor deposition (D) method. More specifically, a semiconductor device capable of performing epitaxial growth while measuring the temperature so that an error in the measurement temperature does not occur even by lamination of semiconductor layers, and capable of controlling the temperature with good reproducibility even when batch processing is repeated. Regarding the manufacturing method.
【０００２】[0002]
【従来の技術】従来、たとえばＭＯＣＶＤ法などにより
ウェハ状の基板に半導体層をエピタキシャル成長する場
合、図３に示されるように、反応装置内のウェハ状の基
板を載置するプラッター１１の凹部にウェハ状の基板１
２を載置する。そして、図示しないモータなどによりプ
ラッター１１を回転させながら、プラッター１１の下か
らヒータ１７により加熱するとともに、プラッター１１
の下でヒータ１７に接しないように、熱電対温度計１
８、もしくはプラッター１１の上方からの放射温度計
（赤外線温度計）１４などにより、温度を測定しながら
所定の温度に制御する。前記熱電対温度計１８の場合、
プラッター１１の下面とヒータ１７からの熱伝導と熱輻
射を受け、前記放射温度計１４の場合、基板１２からの
熱輻射により、また、基板１２が載置されない部分のプ
ラッター１１の表面からの熱輻射により温度を測定す
る。この測定値に基づいて所定の温度に制御する。そし
て反応ガスを装置内に導入し、反応させることにより基
板１２上に半導体層をエピタキシャル成長する。2. Description of the Related Art Conventionally, when a semiconductor layer is epitaxially grown on a wafer-like substrate by MOCVD or the like, as shown in FIG. 3, the wafer is placed in a recess of a platter 11 for mounting the wafer-like substrate in a reactor. Substrate 1
2 is placed. Then, while the platter 11 is rotated by a motor (not shown) or the like, the platter 11 is heated by a heater 17 from below the platter 11.
Thermometer 1 so as not to contact heater 17 under
The temperature is controlled to a predetermined temperature while measuring the temperature by a radiation thermometer (infrared thermometer) 14 from above the platter 8 or the platter 11. In the case of the thermocouple thermometer 18,
It receives heat conduction and heat radiation from the lower surface of the platter 11 and the heater 17, and in the case of the radiation thermometer 14, heat radiation from the substrate 12 causes heat from the surface of the platter 11 where the substrate 12 is not placed. The temperature is measured by radiation. A predetermined temperature is controlled based on this measured value. Then, a semiconductor layer is epitaxially grown on the substrate 12 by introducing and reacting a reaction gas into the apparatus.
【０００３】これらの方法で、たとえばサファイア基板
１２上にチッ化ガリウム系化合物半導体を積層する場
合、前述の放射温度計１４で温度を制御する場合、サフ
ァイア基板１２、チッ化ガリウム系化合物半導体層１５
はともに熱輻射に対して透明であるので、放射温度計１
４によって、その基板１２の下のプラッター１１の表面
からの熱輻射により温度を測定することができる。一
方、基板１２が載置されない部分は、チッ化ガリウム系
化合物半導体層がエピタキシャル成長せず、熱輻射に対
して不透明な反応副生成物による堆積物層１６がプラッ
ター１１の表面を覆う。そのため、堆積物層１６の表面
からの熱輻射により温度を測定することになる。In these methods, for example, when a gallium nitride compound semiconductor is laminated on a sapphire substrate 12, when the temperature is controlled by the radiation thermometer 14, the sapphire substrate 12, the gallium nitride compound semiconductor layer 15
Are both transparent to heat radiation, so the radiation thermometer 1
4, the temperature can be measured by heat radiation from the surface of the platter 11 under the substrate 12. On the other hand, in the portion where the substrate 12 is not mounted, the gallium nitride-based compound semiconductor layer does not grow epitaxially, and the deposit layer 16 made of a reaction by-product opaque to heat radiation covers the surface of the platter 11. Therefore, the temperature is measured by heat radiation from the surface of the deposit layer 16.
【０００４】[0004]
【発明が解決しようとする課題】前述の熱電対温度計１
８で温度を制御する場合、熱電対温度計１８のプローブ
とプラッター１１とヒータ１７の位置関係が正確な温度
測定に非常に重要である。これらの構成部品の位置関係
が少しでも狂うと、温度測定値がずれる。このような理
由により、半導体成長装置のメンテナンスにおいて、こ
れら構成部品の組立て時、これらの位置関係には細心の
注意を払わなければならない。かなり注意深く組み立て
ても、メンテナンス前後で温度測定値がずれていること
が多々ある。また、半導体成長装置を使い込んでゆく
と、熱により、ヒータ１７がたわみ、位置関係がずれ
る。これも温度測定値のずれの原因となる。さらに、半
導体成長装置を使い込んでゆくと、熱電対温度計１８の
プローブ部分に反応副生成物が堆積する。これにより、
反応副生成物を含めたプローブ全体の熱容量が変化し、
温度測定値がずれる。熱電対温度計１８による温度制御
での問題は上述のように、バッチごとで温度測定値の再
現性をとるのが難しいという点である。SUMMARY OF THE INVENTION The aforementioned thermocouple thermometer 1
When controlling the temperature with 8, the positional relationship between the probe of the thermocouple thermometer 18, the platter 11, and the heater 17 is very important for accurate temperature measurement. Any deviation in the positional relationship between these components will result in a shift in the measured temperature value. For these reasons, in assembling these components in the maintenance of the semiconductor growth apparatus, close attention must be paid to their positional relationship. Even with fairly careful assembly, temperature readings often deviate before and after maintenance. Further, as the semiconductor growth apparatus is used, the heater 17 bends due to heat, and the positional relationship is shifted. This also causes a deviation in the measured temperature value. Further, as the semiconductor growth apparatus is used, a reaction by-product is deposited on the probe portion of the thermocouple thermometer 18. This allows
The heat capacity of the entire probe including the reaction by-products changes,
Temperature readings are off. The problem with temperature control by the thermocouple thermometer 18 is that, as described above, it is difficult to obtain reproducibility of temperature measurement values for each batch.
【０００５】一方、前述の放射温度計１４で温度を制御
する場合、図４に示されるようにサファイア基板１２と
チッ化ガリウム系化合物半導体層１５との境界面や、チ
ッ化ガリウム系化合物半導体層１５表面で熱輻射（波長
が赤外領域の電磁波）が反射する。Ｔ0 、Ｔ1 、Ｔ2 …
をそれぞれ０、１、２回サファイア基板１２とチッ化ガ
リウム系化合物半導体層１５の界面で反射した熱輻射と
すると、放射温度計が受ける全熱輻射Ｔは数１で表され
る。On the other hand, when the temperature is controlled by the radiation thermometer 14, the interface between the sapphire substrate 12 and the gallium nitride-based compound semiconductor layer 15 or the gallium nitride-based compound semiconductor layer is controlled as shown in FIG. The surface 15 reflects heat radiation (electromagnetic waves in the infrared region). T 0 , T 1 , T 2 ...
Is the thermal radiation reflected at the interface between the sapphire substrate 12 and the gallium nitride-based compound semiconductor layer 15 twice, once, twice, respectively, and the total thermal radiation T received by the radiation thermometer is expressed by the following equation (1).
【０００６】[0006]
【数１】 (Equation 1)
【０００７】チッ化ガリウム系化合物半導体層の膜厚増
加により、Ｔn とＴm （ｎ≠ｍ）の光路差が熱輻射の波
長の整数倍になったとき、Ｔn とＴm は干渉し、Ｔは大
きくなり、半整数倍になったとき弱くなる。つまり、チ
ッ化ガリウム系化合物半導体層１５の成長と共に測定す
る温度の値が振動して正確な温度測定をすることができ
ないという問題がある。この問題は、たとえばジャパニ
ーズ ジャーナル オブ アプライド フィジックス
（Jpn.J.Appl.Phys.）第３０巻、第８号（１９９１年、
８月）の１６２０〜１６２７頁「干渉効果を用いたチッ
化ガリウム成長のその場観察（In Situ Monitoring of
GaN Growth Using Interference Effects）」にも記載
されている。When the optical path difference between T n and T m (n ≠ m) becomes an integral multiple of the wavelength of thermal radiation due to an increase in the thickness of the gallium nitride-based compound semiconductor layer, T n and T m interfere with each other. , T become large and become weak when they become half integral multiples. In other words, there is a problem in that the temperature value measured with the growth of the gallium nitride-based compound semiconductor layer 15 oscillates and accurate temperature measurement cannot be performed. This problem is discussed, for example, in the Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.) Vol. 30, No. 8 (1991,
(August), pp. 1620-1627, “In Situ Monitoring of Gallium Nitride Growth Using Interference Effect”
GaN Growth Using Interference Effects).
【０００８】実際のプラッター１１の温度は一定にもか
かわらず、温度測定値は熱輻射の干渉によって振動す
る。半導体装置の温度制御部は、この測定値の振動に対
応して、この振動を打ち消すようにヒータ１７へ電流を
供給する。その結果、プラッター１１の温度は測定値と
は逆位相で振動する事となり、均一なエピタキシャル成
長は望めない。Although the actual temperature of the platter 11 is constant, the measured temperature value oscillates due to the interference of heat radiation. The temperature controller of the semiconductor device supplies a current to the heater 17 in response to the vibration of the measured value so as to cancel the vibration. As a result, the temperature of the platter 11 oscillates in a phase opposite to the measured value, and uniform epitaxial growth cannot be expected.
【０００９】また、基板のない部分でのプラッターの表
面の熱輻射により温度測定をする場合は、その上に積層
される凹凸の堆積物層からの熱輻射により測定すること
になり、反応副生成物とプラッターのＣなどの材料とで
放射率（輻射率）が異なるため、反応副生成物が堆積す
るにつれ、測定温度がずれてくる。その結果、前述のい
ずれの方法においても、プラッター上の正確な温度を測
定することができず、均一なエピタキシャル成長をする
ことができないという問題がある。In the case where the temperature is measured by thermal radiation on the surface of the platter in a portion where there is no substrate, the temperature is measured by thermal radiation from a concavo-convex deposit layer laminated on the platter. Since the emissivity (emissivity) differs between the material and the material such as C of the platter, the measurement temperature shifts as reaction by-products are deposited. As a result, in any of the above methods, there is a problem that an accurate temperature on the platter cannot be measured and uniform epitaxial growth cannot be performed.
【００１０】本発明はこのような問題を解決するために
なされたもので、エピタキシャル成長中の基板の温度を
正確に測定して、均一な結晶層をエピタキシャル成長さ
せることができ、バッチ処理を重ねても再現性のある温
度制御を実現する半導体装置の製法を提供することを目
的とする。The present invention has been made in order to solve such a problem, and it is possible to accurately measure the temperature of a substrate during epitaxial growth and to epitaxially grow a uniform crystal layer. It is an object of the present invention to provide a method for manufacturing a semiconductor device which realizes reproducible temperature control.
【００１１】[0011]
【課題を解決するための手段】本発明による半導体装置
の製法は、反応装置内で基板をプラッター上に載置し、
前記プラッターを加熱して、放射温度計により前記プラ
ッターの温度を測定しながら反応ガスを反応させて前記
基板表面に半導体層をエピタキシャル成長する半導体装
置の製法であって、前記プラッターの少なくとも１か所
に前記放射温度計により測定する波長の電磁波を通過
し、かつ表面に凹凸を有するモニター用基板を載置し、
該モニター用基板の下側の前記プラッターからの熱輻射
により温度を測定しながらエピタキシャル成長をするも
のである。According to a method of manufacturing a semiconductor device according to the present invention, a substrate is placed on a platter in a reactor,
A method for manufacturing a semiconductor device in which the platter is heated to react a reaction gas while measuring the temperature of the platter with a radiation thermometer to epitaxially grow a semiconductor layer on the surface of the substrate, wherein at least one portion of the platter is provided. Pass the electromagnetic wave of the wavelength to be measured by the radiation thermometer, and place a monitor substrate having irregularities on the surface,
The epitaxial growth is performed while measuring the temperature by thermal radiation from the platter below the monitor substrate.
【００１２】ここにプラッターとは、反応装置内で半導
体層をエピタキシャル成長させる基板を載置する載置台
を意味する。The term "platter" as used herein means a mounting table on which a substrate on which a semiconductor layer is epitaxially grown in a reactor is mounted.
【００１３】このようにすることにより、モニター用基
板の上に積層される半導体層も１工程のエピタキシャル
成長により積層される半導体層の厚さ程度では測定波長
の電磁波に透明であり、しかもその表面に凹凸が形成さ
れているため、前述のような多重反射波同士の干渉は起
こらず、正確にプラッター表面の温度を測定することが
できる。その結果、均一なエピタキシャル成長をするこ
とができる。In this manner, the semiconductor layer laminated on the monitor substrate is transparent to the electromagnetic wave of the measurement wavelength at the thickness of the semiconductor layer laminated by one-step epitaxial growth. Since the irregularities are formed, the interference between the multiple reflected waves does not occur as described above, and the temperature of the platter surface can be accurately measured. As a result, uniform epitaxial growth can be achieved.
【００１４】前記モニター用基板の表面の凹凸の粗さ
が、基板の屈折率をｎとして前記放射温度計により測定
する波長の１／（４ｎ）以上であれば、熱輻射の干渉に
よる影響を避けることができると共に、表面に積層され
る半導体層の影響を受けることなくモニター用基板の下
側のプラッター表面の輻射熱を測定することができる。If the roughness of the surface of the monitor substrate is not less than 1 / (4n) of the wavelength measured by the radiation thermometer assuming that the refractive index of the substrate is n, the influence of interference of thermal radiation is avoided. The radiant heat on the lower platter surface of the monitor substrate can be measured without being affected by the semiconductor layer laminated on the surface.
【００１５】前記半導体層のエピタキシャル成長が、サ
ファイア基板上へのチッ化ガリウム系化合物半導体のエ
ピタキシャル成長である場合に、前記モニター用基板と
して該エピタキシャル成長をするサファイア基板と同種
の基板を裏向きにして使用することができる。ここにチ
ッ化ガリウム系化合物半導体とは、III 族元素のＧａと
Ｖ族元素のＮとの化合物またはIII 族元素のＧａの一部
がＡｌ、Ｉｎなどの他のIII 族元素と置換したものおよ
び／またはＶ族元素のＮの一部がＰ、Ａｓなどの他のＶ
族元素と置換した化合物からなる半導体をいう。In the case where the epitaxial growth of the semiconductor layer is the epitaxial growth of a gallium nitride compound semiconductor on a sapphire substrate, a substrate of the same kind as the sapphire substrate to be epitaxially grown is used face down as the monitor substrate. be able to. Here, the gallium nitride-based compound semiconductor refers to a compound of a group III element Ga and a group V element N, or a compound in which a part of the group III element Ga is replaced with another group III element such as Al and In. And / or if part of N of group V element is other V such as P or As
A semiconductor made of a compound substituted with a group element.
【００１６】[0016]
【発明の実施の形態】つぎに、図面を参照しながら本発
明の半導体装置の製法について説明をする。Next, a method of manufacturing a semiconductor device according to the present invention will be described with reference to the drawings.
【００１７】本発明の半導体装置の製法は、図１に反応
装置内のプラッター１とその上の凹部に載置されるウェ
ハ状の基板２の部分の斜視説明図が示されているよう
に、基板２をプラッター１上に載置し、プラッター１を
図示しないヒータにより加熱して、放射温度計４により
プラッター１の温度を測定しながら反応ガスを反応させ
て基板２の表面に半導体層をエピタキシャル成長する場
合に、プラッター１の少なくとも１か所に放射温度計４
により測定する波長の電磁波（赤外線）を透過し、か
つ、表面に凹凸を有するモニター用基板５を載置し、そ
のモニター用基板５の下側のプラッター１からの熱輻射
により温度を測定しながらエピタキシャル成長をするも
のである。In the method of manufacturing a semiconductor device according to the present invention, as shown in FIG. 1, a perspective explanatory view of a platter 1 in a reactor and a wafer-like substrate 2 placed in a concave portion thereon is shown. The substrate 2 is placed on the platter 1, the platter 1 is heated by a heater (not shown), and the reaction gas reacts while measuring the temperature of the platter 1 by the radiation thermometer 4 to epitaxially grow a semiconductor layer on the surface of the substrate 2. In this case, at least one place on the platter 1
A monitor substrate 5 that transmits an electromagnetic wave (infrared ray) having a wavelength to be measured and has unevenness on its surface is placed, and the temperature is measured by heat radiation from the platter 1 below the monitor substrate 5. The epitaxial growth is performed.
【００１８】プラッター１は、その表面にウェハ状の基
板２を載置することができるように、凹部が複数個形成
されており、その裏面の中心部には棒状部１ａが固定さ
れてモータなどにより回転できるようにされている。プ
ラッター１は、Ｍｏ、Ｃ、ＳｉＣなどの耐熱性の材料か
らなっている。The platter 1 has a plurality of recesses formed thereon so that the wafer-like substrate 2 can be placed on the front surface thereof. To be able to rotate. The platter 1 is made of a heat-resistant material such as Mo, C, and SiC.
【００１９】モニター用基板５は、放射温度計４により
測定する波長の電磁波（たとえば１.３μｍ程度の波長
の赤外線）に対して透明な材料からなり、少なくともそ
の表面側に凹凸が形成されており、ザラザラした状態に
形成される。この凹凸は、前述の干渉を避けるためのも
ので、モニター用基板５の屈折率をｎとして、放射温度
計４により測定する波長の１／（４ｎ）以上、好ましく
は１／（４ｎ）〜１／ｎ程度の表面粗さに形成されてお
ればよく、たとえばチッ化ガリウム系化合物半導体層を
積層するサファイア基板（厚さが３５０μｍ程度）を裏
向きにして、裏面のザラザラした面を使用することがで
きる。このモニター用基板５は、エピタキシャル成長用
のサファイア基板を用いなくても、放射温度計４により
測定する波長の電磁波に対して透明であればよいため、
たとえば石英、ガラス、シリコン基板などを使用するこ
とができる。また、表面の凹凸は、両面に形成されてい
てもよく、鏡面仕上げがされていない程度の凹凸があれ
ばよいため、厚さが０.３５〜１ｍｍ程度の通常の石英
板やガラス板、シリコン基板などをそのまま使用するこ
とができる。The monitor substrate 5 is made of a material transparent to electromagnetic waves having a wavelength measured by the radiation thermometer 4 (for example, infrared rays having a wavelength of about 1.3 μm), and has irregularities formed at least on its surface side. , Are formed in a rough state. The unevenness is for avoiding the above-mentioned interference, and is 1 / (4n) or more, preferably 1 / (4n) to 1 / (4n) or more of the wavelength measured by the radiation thermometer 4, where n is the refractive index of the monitor substrate 5. / N surface roughness, for example, a sapphire substrate (having a thickness of about 350 μm) on which a gallium nitride-based compound semiconductor layer is laminated faces down, and a rough surface of the back surface is used. Can be. The monitor substrate 5 may be transparent to electromagnetic waves having a wavelength measured by the radiation thermometer 4 without using a sapphire substrate for epitaxial growth.
For example, quartz, glass, a silicon substrate, or the like can be used. In addition, the surface irregularities may be formed on both surfaces, and may be irregularities that are not mirror-finished. Therefore, a normal quartz plate or glass plate having a thickness of about 0.35 to 1 mm, silicon, The substrate or the like can be used as it is.
【００２０】本発明により半導体層を基板上に積層する
には、ＭＯＣＶＤ装置内で、前述のプラッター１の凹部
にチッ化ガリウム系化合物半導体を積層するウェハ状の
基板２と、少なくとも１個のモニター用基板５とをセッ
ティングする。そして、図１に示されるように、、モニ
ター用基板５上から温度を測定することができるよう
に、放射温度計４をセッティングし、ＭＯＣＶＤ装置内
をＨ2 ガス雰囲気にしてプラッター１の下に配設される
図示しないヒータによりプラッター１の温度を上昇さ
せ、基板２の温度を上昇させる。そして、たとえば図２
に示され、以下に示すように半導体層をエピタキシャル
成長して積層する。このときの基板２の温度は、モニタ
ー用基板５を介して放射温度計４により測定されるが、
プラッター１は図示しないモータにより棒状部１ａを介
して回転しており、測定に際してはモニター用基板５か
らの熱輻射による入力の場合のみのデータを使用する。In order to laminate a semiconductor layer on a substrate according to the present invention, a wafer-like substrate 2 on which a gallium nitride-based compound semiconductor is laminated in the recess of the platter 1 and at least one monitor are provided in an MOCVD apparatus. The substrate 5 is set. Then, as shown in FIG. 1, the radiation thermometer 4 is set so that the temperature can be measured from above the monitor substrate 5, the inside of the MOCVD apparatus is set to an H 2 gas atmosphere, and the The temperature of the platter 1 and the temperature of the substrate 2 are increased by a heater (not shown) provided. And, for example, FIG.
And a semiconductor layer is epitaxially grown and laminated as shown below. The temperature of the substrate 2 at this time is measured by the radiation thermometer 4 via the monitor substrate 5,
The platter 1 is rotated by a motor (not shown) via the rod-shaped portion 1a, and uses data only in the case of input by thermal radiation from the monitor substrate 5 for measurement.
【００２１】図２に示されるようなチッ化ガリウム系化
合物半導体を積層するには、まず、サファイア基板２１
の温度がたとえば５００〜６００℃程度になったところ
で、ＮＨ3 と、ＴＭＧ（トリメチルガリウム）とをキャ
リアガスのＨ2 および必要なドーパントガス（ｎ形の場
合、たとえばＳｉＨ4 、ｐ形の場合、たとえばシクロペ
ンタジエニルマグネシウム）と共に導入して反応させ、
ＧａＮからなる低温バッファ層２２を０.０１〜０.２μ
ｍ程度程度形成し、ついで基板２の温度をたとえば１０
００〜１１００℃程度にして、同じ組成でｎ形のｎ形層
（クラッド層）２３を１〜２μｍ程度成膜する。さらに
基板２の温度をたとえば７００〜８００℃程度にして、
ドーパントガスを止め、反応ガスとしてＴＭＩｎ（トリ
メチルインジウム）を追加し、ＩｎＧａＮ系（ＩｎとＧ
ａの比率が種々変り得ることを意味する）化合物半導体
からなる活性層２４を０.０５〜０.３μｍ程度成膜す
る。In order to stack a gallium nitride-based compound semiconductor as shown in FIG.
At a temperature of, for example, about 500 to 600 ° C., NH 3 and TMG (trimethyl gallium) are mixed with H 2 as a carrier gas and necessary dopant gas (for n-type, for example, SiH 4 , for p-type, For example, cyclopentadienyl magnesium)
The low-temperature buffer layer 22 made of GaN has a thickness of 0.01 to 0.2 μm.
m, and then the temperature of the substrate 2 is set to, for example, 10
At about 100 to 1100 ° C., an n-type n-type layer (cladding layer) 23 having the same composition is formed to a thickness of about 1 to 2 μm. Further, the temperature of the substrate 2 is set to, for example, about 700 to 800 ° C.,
The dopant gas is stopped, TMIn (trimethylindium) is added as a reaction gas, and an InGaN-based (In and G
An active layer 24 made of a compound semiconductor is formed to a thickness of about 0.05 to 0.3 μm.
【００２２】ついで、基板２の温度を再度たとえば１０
００〜１１００℃程度にして、反応ガスのＴＭＩｎをＴ
ＭＡ（トリメチルアルミニウム）に変更し、ドーパント
ガスをｐ形のガスとして、ｐ形のＡｌＧａＮ系（Ａｌと
Ｇａの比率が種々変り得ることを意味する）化合物半導
体層を０.１〜０.５μｍ程度、さらに同じ基板２の温度
を維持しながら再度反応ガスのＴＭＡを止めてｐ形のＧ
ａＮ層を０.１〜０.５μｍ程度それぞれ積層し、ｐ形層
２５を形成する。Next, the temperature of the substrate 2 is again set to, for example, 10
The temperature of the reaction gas is set to about
MA (trimethylaluminum) was changed to a p-type dopant gas as a p-type gas, and a p-type AlGaN-based (which means that the ratio of Al to Ga could be varied) compound semiconductor layer was about 0.1 to 0.5 μm. The TMA of the reaction gas is stopped again while maintaining the same temperature of the substrate 2, and the p-type G
An aN layer is laminated about 0.1 to 0.5 μm to form a p-type layer 25.
【００２３】その結果、チッ化ガリウム系化合物半導体
からなる発光層形成部が積層される。この後は図示され
ていないが、アニール処理によりｐ形層の活性化をし
て、ＮｉおよびＡｕの合金層からなる拡散メタル層をた
とえば５ｎｍ程度形成し、その表面に、および積層した
半導体層の一部をエッチング除去することにより露出す
るｎ形層２３にそれぞれ電極を形成することにより、チ
ッ化ガリウム系化合物半導体からなる青色系の半導体発
光素子が得られる。As a result, a light emitting layer forming portion made of a gallium nitride compound semiconductor is laminated. Thereafter, although not shown, the p-type layer is activated by an annealing process to form a diffusion metal layer made of an alloy layer of Ni and Au, for example, to a thickness of about 5 nm. By forming an electrode on each of the n-type layers 23 that are exposed by partially removing them by etching, a blue-based semiconductor light emitting device made of a gallium nitride-based compound semiconductor can be obtained.
【００２４】本発明によれば、半導体層をエピタキシャ
ル成長する基板の他に、温度測定のためのモニター用基
板をプラッター上に載置して、モニター用基板を介して
プラッターの温度を測定している。しかも、モニター用
基板は、放射温度計により測定する波長の電磁波（赤外
線）に対して透明であると共に、表面に凹凸部が形成さ
れている。このモニター用基板の表面に堆積される半導
体層も１工程で積まれる程度の厚さでは、エピタキシャ
ル成長していなくても前述の電磁波に対して透明であ
り、モニター用基板の下側のプラッターの表面からの輻
射により温度を測定することができる。しかも、モニタ
ー用基板ではその表面が凹凸になっているため、干渉を
起こすような規則的な反射が生ぜず、成長する半導体層
の厚さに拘らず、安定した温度測定をすることができ
る。その結果、基板の温度制御を正確に行うことがで
き、均一な半導体層を成長することができる。According to the present invention, in addition to the substrate on which the semiconductor layer is epitaxially grown, a monitor substrate for measuring temperature is placed on the platter, and the temperature of the platter is measured via the monitor substrate. . Moreover, the monitor substrate is transparent to electromagnetic waves (infrared rays) having a wavelength measured by a radiation thermometer, and has an uneven portion on the surface. The semiconductor layer deposited on the surface of the monitor substrate is transparent to the above-mentioned electromagnetic waves even if it is not epitaxially grown, so that the semiconductor layer is deposited in one step. The temperature can be measured by the radiation from. In addition, since the surface of the monitor substrate is uneven, regular reflection that causes interference does not occur, and stable temperature measurement can be performed regardless of the thickness of the growing semiconductor layer. As a result, the temperature of the substrate can be accurately controlled, and a uniform semiconductor layer can be grown.
【００２５】前述の例のように、サファイア基板にチッ
化ガリウム系化合物半導体層を積層する場合には、前述
のようにプラッターの凹部の１つのサファイア基板を裏
向きにするだけで、通常と同様の工程でエピタキシャル
成長をすることができ、簡単に均一なチッ化ガリウム系
化合物半導体層を成長することができる。When a gallium nitride-based compound semiconductor layer is laminated on a sapphire substrate as in the above-described example, only one sapphire substrate in the concave portion of the platter is turned upside down as described above. In this step, epitaxial growth can be performed, and a uniform gallium nitride-based compound semiconductor layer can be easily grown.
【００２６】なお、モニター用基板は１枚でなくても複
数枚設けることもでき、その場合はプラッター上の異な
る場所での温度測定を行うことができ、バラツキを抑え
るのに都合がよい。この場合、モニター用基板は温度測
定のための面積があればよく、通常の基板を載置する凹
部とは別にプラッター上に小さな凹部を設けてモニター
用基板を載置すれば、エピタキシャル成長する基板の枚
数は減らない。また、基板を取り替えた新たなエピタキ
シャル成長をする度に、モニター用基板を取り替えれ
ば、プラッターの汚れを気にすることなく、常に正確な
プラッターの温度を測定することができる。It is to be noted that a plurality of monitor substrates may be provided instead of a single monitor substrate. In this case, the temperature can be measured at different locations on the platter, which is convenient for suppressing variations. In this case, the monitor substrate only needs to have an area for temperature measurement, and if a small recess is provided on the platter separately from the recess on which the normal substrate is placed and the monitor substrate is placed, the substrate for epitaxial growth can be formed. The number does not decrease. In addition, whenever the substrate for monitoring is replaced each time a new epitaxial growth is performed after replacing the substrate, the temperature of the platter can always be accurately measured without worrying about contamination of the platter.
【００２７】[0027]
【発明の効果】本発明によれば、半導体層の成長する厚
さに拘らず、常に安定してプラッター、すなわち基板の
温度を測定することができ、均一な半導体層のエピタキ
シャル成長をすることができる。バッチ処理を重ねても
再現性よく温度が制御できる。その結果、特性の優れた
半導体装置を得ることができる。According to the present invention, the temperature of the platter, that is, the temperature of the substrate can always be stably measured irrespective of the thickness of the grown semiconductor layer, and uniform epitaxial growth of the semiconductor layer can be achieved. . Even if batch processing is repeated, the temperature can be controlled with good reproducibility. As a result, a semiconductor device having excellent characteristics can be obtained.
【図１】本発明の製法に用いるプラッター上に基板およ
びモニター用基板を載置した状態の斜視説明図である。FIG. 1 is a perspective explanatory view showing a state in which a substrate and a monitor substrate are mounted on a platter used in a manufacturing method of the present invention.
【図２】基板上にチッ化ガリウム系化合物半導体を積層
した例の説明図である。FIG. 2 is an explanatory diagram of an example in which a gallium nitride-based compound semiconductor is stacked on a substrate.
【図３】従来のエピタキシャル成長をするときのプラッ
ター部の説明図である。FIG. 3 is an explanatory diagram of a platter portion when performing conventional epitaxial growth.
【図４】基板上に半導体層を成長するときの反射による
干渉の説明図である。FIG. 4 is an explanatory diagram of interference due to reflection when a semiconductor layer is grown on a substrate.
１ プラッター ２ 基板 ４ 放射温度計 ５ モニター用基板 DESCRIPTION OF SYMBOLS 1 Platter 2 Substrate 4 Radiation thermometer 5 Monitor substrate
Claims (3)
し、前記プラッターを加熱して、放射温度計により前記
プラッターの温度を測定しながら反応ガスを反応させて
前記基板表面に半導体層をエピタキシャル成長する半導
体装置の製法であって、前記プラッターの少なくとも１
か所に前記放射温度計により測定する波長の電磁波を透
過し、かつ、表面に凹凸を有するモニター用基板を載置
し、該モニター用基板の下側の前記プラッターからの熱
輻射により温度を測定しながらエピタキシャル成長をす
る半導体装置の製法。1. A substrate is placed on a platter in a reactor, the platter is heated, and a reaction gas reacts while measuring the temperature of the platter with a radiation thermometer to form a semiconductor layer on the surface of the substrate. A method of manufacturing a semiconductor device to be epitaxially grown, comprising:
A monitor substrate that transmits electromagnetic waves having a wavelength to be measured by the radiation thermometer and that has irregularities on its surface is placed in a place, and the temperature is measured by heat radiation from the platter below the monitor substrate. A method of manufacturing a semiconductor device that performs epitaxial growth while performing.
が、前記基板の屈折率をｎとして、前記放射温度計によ
り測定する波長の１／（４ｎ）以上である請求項１記載
の半導体装置の製法。2. The semiconductor according to claim 1, wherein the roughness of the irregularities on the surface of the monitor substrate is at least 1 / (4n) of the wavelength measured by the radiation thermometer, where n is the refractive index of the substrate. Equipment manufacturing method.
サファイア基板上へのチッ化ガリウム系化合物半導体の
エピタキシャル成長であり、前記モニター用基板が該エ
ピタキシャル成長をするサファイア基板と同種の基板を
裏向きにして使用する請求項１または２記載の製法。3. An epitaxial growth of the semiconductor layer,
3. The method according to claim 1, wherein the gallium nitride-based compound semiconductor is epitaxially grown on a sapphire substrate, and the monitor substrate uses a substrate of the same type as the sapphire substrate on which the epitaxial growth is performed, face down.
Priority Applications (1)
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|---|---|---|---|
| JP22470097A JP3649867B2 (en) | 1997-08-21 | 1997-08-21 | Manufacturing method of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22470097A JP3649867B2 (en) | 1997-08-21 | 1997-08-21 | Manufacturing method of semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1167672A true JPH1167672A (en) | 1999-03-09 |
| JP3649867B2 JP3649867B2 (en) | 2005-05-18 |
Family
ID=16817882
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22470097A Expired - Fee Related JP3649867B2 (en) | 1997-08-21 | 1997-08-21 | Manufacturing method of semiconductor devices |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033436B2 (en) | 2001-04-12 | 2006-04-25 | Sony Corporation | Crystal growth method for nitride semiconductor and formation method for semiconductor device |
| KR20120110060A (en) * | 2011-03-28 | 2012-10-09 | 도쿄엘렉트론가부시키가이샤 | Component in processing chamber of substrate processing apparatus and method of measuring temperature of the component |
| CN103389170A (en) * | 2012-05-07 | 2013-11-13 | 中微半导体设备(上海)有限公司 | Substrate temperature measuring method and device for vacuum treatment device |
-
1997
- 1997-08-21 JP JP22470097A patent/JP3649867B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033436B2 (en) | 2001-04-12 | 2006-04-25 | Sony Corporation | Crystal growth method for nitride semiconductor and formation method for semiconductor device |
| KR20120110060A (en) * | 2011-03-28 | 2012-10-09 | 도쿄엘렉트론가부시키가이샤 | Component in processing chamber of substrate processing apparatus and method of measuring temperature of the component |
| JP2012204742A (en) * | 2011-03-28 | 2012-10-22 | Tokyo Electron Ltd | Structural member in processing chamber of substrate processing apparatus and temperature measuring method therefor |
| CN103389170A (en) * | 2012-05-07 | 2013-11-13 | 中微半导体设备(上海)有限公司 | Substrate temperature measuring method and device for vacuum treatment device |
| JP2013236077A (en) * | 2012-05-07 | 2013-11-21 | Advanced Micro Fabrication Equipment Inc Shanghai | Method and device for measuring temperature of substrate in vacuum processing apparatus |
| TWI514496B (en) * | 2012-05-07 | 2015-12-21 | ||
| US9443715B2 (en) | 2012-05-07 | 2016-09-13 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Method and device for measuring temperature of substrate in vacuum processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3649867B2 (en) | 2005-05-18 |
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