JPH1167800A - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Abstract

(57) [Problem] To prevent abnormal deposition of solder from a lead exposed portion in a solder plating step in a QFP using a tape dam. Also, the sorting yield is improved. SOLUTION: In a resin-sealed semiconductor device in which a semiconductor chip is fixed on a tab, an electrode of the semiconductor chip is electrically connected to a lead, and a resin is sealed, a reinforcing material is contained at a predetermined position of the lead. A dam insulating tape made of an insulating film is provided, and a part of the insulating film containing the reinforcing material remains (arranges) on the lead even after resin molding.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device and a method of manufacturing the same, and more particularly, to a technology effective when applied to a QFP (Quat Flat Package) using a tape dam.

[0002]

2. Description of the Related Art In a conventional QFP semiconductor device, a QFP having an outer lead pitch of 0.3 mm is used in order to increase the number of pins and reduce the size. In this QFP, a polyimide tape dam is used in which a polyimide tape is attached to a lead frame with an adhesive and used as a dam for preventing mold resin (mold resin) from flowing out (Japanese Patent Laid-Open No. 6-37126).
Reference).

[0003]

In a conventional QFP using a tape dam, the selection yield of short-circuit defects between leads may be reduced in the selection process. As a result of the analysis of the short-circuit failure between the leads, the polyimide tape dam of the resin mold line was crushed during mold clamping (clamping), and a part of the polyimide tape remaining on the lead was cracked or missing, and the polyimide tape was damaged under the polyimide tape. The leads at are exposed. Therefore, it was found that in the solder plating process after the resin molding, the solder was abnormally deposited from the exposed portions of the leads, resulting in a short between the leads. As a result of the countermeasure experiment, it was found that the abnormal solder deposition did not occur unless the lead of the polyimide tape dam was exposed. In the current polyimide tape material, it was necessary to change the solder plating process in order not to expose the leads.

An object of the present invention is to provide a QF using a tape dam.
An object of the present invention is to provide a technique capable of preventing abnormal deposition of solder from a lead exposed portion in a solder plating step.

Another object of the present invention is to provide a technique capable of improving the sorting yield in a QFP using a tape dam.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0007]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, typical ones are briefly described as follows.

(1) In a resin-sealed semiconductor device in which a semiconductor chip is fixed on a tab, electrodes of the semiconductor chip are electrically connected to leads, and the resin is sealed with a resin, reinforcing materials are provided at predetermined positions of the leads. Is provided, and a part of the insulating film containing the reinforcing material is disposed on the lead even after resin molding.

(2) The dam insulating tape is provided on a thermoplastic insulating film embedded between outer leads,
This is a two-layer insulating tape in which an insulating film containing a reinforcing material is overlapped, and the insulating film containing the reinforcing material is arranged on the lead even after resin molding.

(3) The dam insulating tape is formed by attaching a metal plate on a thermoplastic insulating film containing a reinforcing material. Even after resin molding, the metal plate and the lead are insulated by the thermoplastic insulating film. Have been.

(4) The dam insulating tape is made of a thermoplastic insulating film containing a spherical filler, and the filler in the dam insulating tape remains on the leads even after resin molding. The resin-encapsulated semiconductor device according to claim 1.

(5) The dam insulating tape is formed by attaching a metal plate on a thermoplastic insulating film containing a spherical filler. Even after resin molding, the metal plate and the lead are formed by the thermoplastic insulating film. Insulated.

(6) A method of manufacturing a resin-encapsulated semiconductor device in which a semiconductor chip is fixed on a tab of a lead frame, electrodes of the semiconductor chip are electrically connected to leads, and resin is encapsulated by a transfer molding method. At a predetermined position of the lead frame, a dam insulating tape made of an insulating film containing a reinforcing material or a spherical filler is attached,
This affixed dam insulating tape is pressed between the leads of the lead frame by clamping the mold during resin molding, and a part of the insulating film containing a reinforcing material or a spherical filler remains on the leads. This is a manufacturing method in which molding is performed, outer leads are formed, and solder plating is performed.

(7) A method for manufacturing a resin-sealed semiconductor device in which a semiconductor chip is fixed on a tab of a lead frame, electrodes of the semiconductor chip and leads are electrically connected, and the resin is sealed by a transfer molding method. At a predetermined position of the lead frame, a two-layer insulating tape in which an insulating film containing a reinforcing material is superimposed on a thermoplastic insulating film is attached, and the thermoplastic insulating film of the attached two-layer insulating tape is attached. This is a manufacturing method in which the resin is pressed between the leads of the lead frame by clamping the mold during resin molding, an insulating film containing a reinforcing material is placed on the leads, then resin-molded, and the outer leads are molded and solder-plated. .

(8) A method of manufacturing a resin-encapsulated semiconductor device in which a semiconductor chip is fixed on a tab of a lead frame, electrodes of the semiconductor chip are electrically connected to leads, and the resin is encapsulated by a transfer molding method. At a predetermined position of the lead frame, a dam insulating tape in which a metal plate is stuck on a thermoplastic insulating film containing a reinforcing material or a spherical filler is stuck, and the thermoplastic insulating film of the stuck dam insulating tape is stuck. Press the film between the leads of the lead frame by clamping the mold at the time of resin molding, place a part of the thermoplastic insulating film containing the reinforcing material or spherical filler and the metal plate on the leads, and then perform resin molding. And a method of forming an outer lead and performing solder plating.

According to the above-described means, even if the conventional tape material used for the dam insulating tape is changed, even if the tape material is crushed by the mold clamp at the time of resin molding, the entire tape material can be reliably placed on the lead. Since no reinforcing material remains on the lead and leads are not exposed, abnormal deposition of solder can be prevented. In addition, by attaching a metal plate on a thermoplastic insulating film containing a reinforcing material such as a spherical filler, the plating solution is prevented from entering the tape portion in the solder plating process, thereby preventing abnormal solder deposition. be able to.

Hereinafter, the present invention will be described in detail together with embodiments (examples) with reference to the drawings.

In all of the drawings for describing the present embodiment, components having the same function are denoted by the same reference numerals, and their repeated description will be omitted.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION

(Embodiment 1) FIG. 1 is a top plan view showing a schematic configuration of a resin-sealed semiconductor device according to Embodiment 1 of the present invention, and FIG. 2 is a cross-sectional view taken along line AA 'of FIG. FIG. 1 and 2, reference numeral 1 denotes a sealing resin (hereinafter, referred to as a mold resin), 2 denotes a lead, 2A denotes an inner lead portion, 2B denotes an outer lead portion, and 3 denotes a dam insulating tape made of, for example, a thermoplastic insulating film. 4 is a lead frame, 5 is a semiconductor chip, 6 is a bonding wire, and 7 is a tab.

In the resin-encapsulated semiconductor device according to the first embodiment, as shown in FIGS. 1, 2 and 4, a semiconductor chip 5 is fixed on a tab portion 7 of a tab suspension lead. In the resin-encapsulated semiconductor device in which the electrode is electrically connected to the inner lead portion 2A of the lead 2 and sealed with the mold resin 1, a thermoplastic insulating film 3A embedded between outer leads at a predetermined position of the lead. There is provided a dam insulating tape 3 composed of a two-layer insulating tape in which an insulating film 3B containing a reinforcing material is superposed thereon. Then, as shown in FIG. 4, a part of the thermoplastic insulating film 3A is embedded between the leads 2, and a part of the thermoplastic insulating film 3A and the insulating film 3B containing the reinforcing material remain after the resin molding. It is arranged on the lead 2.

That is, as shown in FIG. 2, the dam insulating tape 3 is arranged at the boundary between the mold resin 1 forming the outer shape of the package and the outer lead 2B as an external connection terminal.

As shown in FIG. 3, the lead frame 4 generally includes a tab 7 for fixing (adhering) the semiconductor chip 5, a tab suspension lead 7A supporting the tab 7, and a tab. A plurality of inner leads 2A are provided around the portion 7, and outer leads 2B are drawn out of the package 1 after resin sealing (molding).

The dam insulating tape 3 is, as shown in FIG. 4 (an enlarged sectional view of a main part taken along line BB ′ in FIG. 1),
This is a two-layer insulating tape in which a thermoplastic insulating film 3A and an insulating film 3B containing a reinforcing material such as glass cloth are laminated. Then, at the time of resin molding, part of the thermoplastic insulating film 3A is press-fitted between the leads of the outer leads 2B, and part of the thermoplastic insulating film 3A and the reinforcing material-containing film 3B are connected to the leads 2 (the inner leads 2A and the outer leads 2B). 2B). The thickness of the residual layer is about 10 μm.

In assembling a semiconductor device using such a lead frame 4, generally, after a semiconductor chip 5 is fixed to a tab portion 7 of the lead frame 4, a bonding pad portion (electrode) of the semiconductor chip 5 and an inner lead portion 2A are connected. Are electrically connected by wire bonding with a connector wire 6 and then closed in a cavity of a mold 8. At this time, as shown in FIG. 5, a part of the dam insulating tape 3 attached on the mold line is formed by the upper mold 8A of the mold 8 by the dam insulating tape 3.
Part of the thermoplastic insulating film 3A is the outer lead 2
B, and a part of the thermoplastic insulating film 3A and the reinforcing material-containing film 3B remain on the leads 2 (the inner leads 2A and the outer leads 2B). Then, a resin that has been heated and has a reduced viscosity flows into the cavity closed by the upper mold 8A and the lower mold 8B of the mold 8 to perform molding. Next, the outer lead portion 2B is bent and completed.

At this time, the resin can be prevented from flowing out to the outer lead portion 2B by the thermoplastic insulating film 3A of the dam insulating tape 3 instead of the conventional dam bar. The resin cures after a certain period of time to complete the package outer shape. In the first embodiment, however,
Since the dam insulating tape 3 is an insulator, it has a structure to enter the cured mold resin 1.

According to the first embodiment, when the resin is molded, the reinforcing material-containing film 3B of the insulating tape for dams 3 always remains on the leads 2, so that the thermoplastic tape of the insulating tape for leads 2 dam 3 is formed. Lead 2 under insulating film 3A (inner lead 2A and outer lead 2B)
Is not exposed, it is possible to prevent short-circuit defects between leads due to abnormal deposition of solder in the solder plating process. As a result, in a QFP using a tape dam, the selection yield of short-circuit defects between leads can be improved.

Further, in the first embodiment, since the dam insulating tape 3 is an insulator, it is not necessary to separate the leads in the molding process of the outer lead portion 2A after the resin molding. No process is required.
As a result, manufacturing costs can be reduced.

(Embodiment 2) FIG. 6 shows Embodiment 2 of the present invention.
2 is a cross-sectional view of a principal part showing a schematic configuration of an insulating tape for a dam and leads in a resin-sealed semiconductor device of the present invention, wherein 10 is a thermoplastic insulating film, and 11 is a reinforcing material such as a glass cloth.

The resin-sealed semiconductor device of the second embodiment is
As shown in FIG. 6, instead of the dam insulating tape 3,
This uses a thermoplastic insulating film 10 containing a reinforcing material 11 such as a glass cloth. Thus, the thermoplastic insulating film 1 containing the reinforcing material 11 such as a glass cloth
0, the upper mold 8
A part of the thermoplastic insulating film 10 containing the reinforcing material 11 is press-fitted between the leads of the outer leads 2B, and the part remains (disposed) on the leads 2 (the inner leads 2A and the outer leads 2B). . The thickness of the residual layer is about 10 μm.

As a result, the leads 2 (the inner leads 2A and the outer leads 2B) under the thermoplastic insulating film 10 are not exposed, so that a short circuit between leads due to abnormal deposition of solder in the solder plating step can be prevented. As a result, in a QFP using a tape dam, the selection yield of short-circuit defects between leads can be improved.

(Embodiment 3) FIG. 7 shows Embodiment 3 of the present invention.
3 is a cross-sectional view of a principal part showing a schematic configuration of an insulating tape for a dam and leads in a resin-sealed semiconductor device of the present invention, wherein 20 is a thermoplastic insulating film, and 21 is a spherical filler.

The resin-encapsulated semiconductor device of the third embodiment is
As shown in FIG. 7, instead of the dam insulating tape 3,
Thermoplastic insulating film 2 containing spherical filler 21
0 is used. The thickness of the residual layer of the spherical filler 21 remaining on the leads 2 in the thermoplastic insulating film 20 after the resin molding is about 10 μm.

As described above, by using the thermoplastic insulating film 20 containing the spherical filler 21, the spherical filler 21 in the thermoplastic insulating film 20 remains on the leads 2 even after the resin molding, and Since the leads 2 (the inner leads 2A and the outer leads 2B) under the insulating film 20 are not exposed, it is possible to prevent short-circuit defects between leads due to abnormal deposition of solder in the solder plating step. As a result, in a QFP using a tape dam, the selection yield of short-circuit defects between leads can be improved.

(Embodiment 4) FIG. 8 shows Embodiment 4 of the present invention.
2 is a cross-sectional view of a principal part showing a schematic configuration of an insulating tape for a dam and leads in a resin-sealed semiconductor device of (1), 10 is a thermoplastic insulating film, 11 is a reinforcing material such as glass cloth, 3
0 is a metal plate.

The resin-encapsulated semiconductor device of the fourth embodiment is
As shown in FIG. 8, instead of the dam insulating tape 3,
A material obtained by laminating a metal plate 30 on a thermoplastic insulating film 10 containing a reinforcing material 11 such as a glass cloth is used. A part of the thermoplastic insulating film 10 and the metal plate 30 are arranged on the leads 2 even after resin molding. It is made to be done. Then, even after the resin molding, the metal plate 30 and the leads 2 are insulated by the thermoplastic insulating film 10. The thickness of the two layers of the part of the thermoplastic insulating film 10 and the metal plate 30 disposed on the lead 2 is about 10 μm.

As described above, even after the resin molding, a part of the plastic insulating film 10 and the metal plate 30 are disposed on the leads, so that the leads 2 (the inner leads 2A and the outer leads 2B) under the thermoplastic insulating film 10 are formed. )
Is not exposed, it is possible to prevent short-circuit defects between leads due to abnormal deposition of solder in the solder plating process.

Further, by adhering the metal plate 30 on the thermoplastic insulating film 10 containing the reinforcing material, the plating solution is prevented from entering the tape portion in the solder plating step, so that abnormal deposition of solder is prevented. be able to. As a result, in a QFP using a tape dam, the selection yield of short-circuit defects between leads can be improved.

(Embodiment 5) FIG. 9 shows Embodiment 5 of the present invention.
2 is a cross-sectional view of a principal part showing a schematic configuration of an insulating tape for a dam and leads in a resin-sealed semiconductor device of the present invention, wherein 20 is a thermoplastic insulating film, 21 is a spherical filler, and 30 is a metal plate.

The resin-encapsulated semiconductor device of the fifth embodiment is
As shown in FIG. 9, instead of the dam insulating tape 3,
Thermoplastic insulating film 2 containing spherical filler 21
A part of the thermoplastic insulating film 20 and the metal plate 30 are also used after resin molding.
Are arranged on the lead. Then, even after the resin molding, the metal plate 30 and the leads 2 are insulated by the thermoplastic insulating film 10. The thickness of the two layers of the part of the thermoplastic insulating film 10 and the metal plate 30 arranged on the lead 2 is about 10 μm.

As described above, even after the resin molding, a part of the plastic insulating film 20 and the metal plate 30 are arranged on the leads, so that the leads 2 (the inner leads 2A and the outer leads 2B) under the thermoplastic insulating film 20 are formed. )
Is not exposed, it is possible to prevent short-circuit defects between leads due to abnormal deposition of solder in the solder plating process.

Further, by adhering the metal plate 30 on the thermoplastic insulating film 20 containing the reinforcing material, it is possible to prevent the plating solution from entering the tape portion in the solder plating process, thereby preventing abnormal solder deposition. be able to. As a result, in a QFP using a tape dam, the selection yield of short-circuit defects between leads can be improved.

As described above, the invention made by the present inventor is:
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above-described embodiment, but can be variously modified without departing from the scope of the invention.

[0043]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

Insulating tape for dam By changing the conventional tape material used for the dam, even if the tape is crushed by a mold clamp during resin molding, the reinforcing material remains on the entire lead material without fail, Since the leads are not exposed, abnormal deposition of solder can be prevented.

In addition, since a metal plate is stuck on a thermoplastic insulating film containing a reinforcing material to prevent a plating solution from entering a tape portion in a solder plating process, abnormal deposition of solder can be prevented. it can.

Thus, the QFP using the tape dam
In this case, it is possible to improve the selection yield of short-circuit defects between leads.

[Brief description of the drawings]

FIG. 1 is a top plan view showing a schematic configuration of a resin-sealed semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line A-A 'of FIG.

FIG. 3 is a diagram showing a schematic configuration of a lead frame according to the embodiment of the present invention.

FIG. 4 is an enlarged sectional view of a main part taken along line BB ′ of FIG. 1;

FIG. 5 is a diagram illustrating a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment.

FIG. 6 is a sectional view of a principal part showing a schematic configuration of a dam insulating tape and leads in a resin-sealed semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a sectional view of a principal part showing a schematic configuration of an insulating tape for a dam and leads in a resin-sealed semiconductor device according to a third embodiment of the present invention.

FIG. 8 is a sectional view of a principal part showing a schematic configuration of a dam insulating tape and leads in a resin-sealed semiconductor device according to a fourth embodiment of the present invention.

FIG. 9 is a sectional view of a principal part showing a schematic configuration of a dam insulating tape and leads in a resin-sealed semiconductor device according to a fifth embodiment of the present invention.

[Explanation of symbols]

1 ... sealing resin, 2 ... lead, 2A ... inner lead part,
2B ... Outer lead part, 3 ... Insulating tape for dam, 3
A, 10, 20 ... thermoplastic insulating film, 3B, 11 ...
Reinforcing material, 4 ... lead frame, 5 ... semiconductor chip, 6 ...
Bonding wire, 7: tab portion, 7A: tab suspension lead, 8: mold die, 8A: upper die, 8B: lower die,
21: spherical filler, 30: metal plate.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshihiro Tsuboi 5-20-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Hitachi RLS Engineering Co., Ltd. (72) Inventor Hiroshi Tachi Kodaira, Tokyo 5-20-1 Honcho, Ichimizu-shi Hitachi RLS Engineering Co., Ltd. (72) Inventor Takashi Miwa 2326 Imai, Ome-shi, Tokyo Inside Device Development Center, Hitachi, Ltd.

Claims (8)

[Claims] In a resin-sealed semiconductor device in which a semiconductor chip is fixed on a tab, electrodes of the semiconductor chip are electrically connected to leads, and a resin is sealed, a reinforcing material is provided at a predetermined position of the lead. A resin-encapsulated semiconductor device, wherein a dam insulating tape made of an insulating film is provided, and a part of the insulating film containing the reinforcing material is disposed on the lead even after resin molding. . 2. The dam insulating tape is a two-layer insulating tape in which an insulating film containing a reinforcing material is superposed on a thermoplastic insulating film embedded between outer leads. 2. The resin-encapsulated semiconductor device according to claim 1, wherein the insulating film to be contained is disposed on the lead even after the resin molding. 3. The dam insulating tape comprises a thermoplastic insulating film containing a reinforcing material and a metal plate attached to a thermoplastic insulating film, and the metal plate and the leads are insulated by the thermoplastic insulating film even after resin molding. The resin-sealed semiconductor device according to claim 1, wherein: 4. The dam insulating tape is made of a thermoplastic insulating film containing a spherical filler, and the filler in the dam insulating tape remains on the leads after resin molding. The resin-sealed semiconductor device according to claim 1. 5. The dam insulating tape comprises a thermoplastic insulating film containing a spherical filler and a metal plate adhered on the thermoplastic insulating film. Even after resin molding, the metal plate and the lead are insulated by the thermoplastic insulating film. The resin-encapsulated semiconductor device according to claim 4, wherein: 6. A method of manufacturing a resin-encapsulated semiconductor device, comprising fixing a semiconductor chip on a tab of a lead frame, electrically connecting electrodes of the semiconductor chip to leads, and encapsulating the resin by transfer molding. At a predetermined position of the lead frame, a dam insulating tape made of an insulating film containing a reinforcing material or a spherical filler is attached, and the attached dam insulating tape is sealed with a metal mold at the time of resin molding. A resin-sealed mold characterized by being pushed between leads, leaving a part of an insulating film containing a reinforcing material or a spherical filler on the leads, then resin-molding, forming outer leads and solder-plating. Semiconductor device manufacturing method. 7. A method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor chip is fixed on a tab of a lead frame, electrodes of the semiconductor chip are electrically connected to leads, and resin is encapsulated by a transfer molding method. At a predetermined position of the lead frame, a two-layer insulating tape obtained by laminating an insulating film containing a reinforcing material on a thermoplastic insulating film is attached, and the thermoplastic insulating film of the attached two-layer insulating tape is made of resin. It is characterized in that it is pressed between the leads of the lead frame by clamping the mold at the time of molding, the insulating film containing the reinforcing material is placed on the leads, then resin molded, the outer leads are molded and solder plated. A method for manufacturing a resin-sealed semiconductor device. 8. A method for manufacturing a resin-encapsulated semiconductor device, comprising: fixing a semiconductor chip on a tab of a lead frame, electrically connecting electrodes of the semiconductor chip to leads, and encapsulating the resin by a transfer molding method. At a predetermined position of the lead frame, a dam insulating tape in which a metal plate is stuck on a thermoplastic insulating film containing a reinforcing material or a spherical filler is stuck, and a thermoplastic insulating film of the stuck dam insulating tape is stuck. Is pressed between the leads of the lead frame by clamping the mold during resin molding, a part of the thermoplastic insulating film containing the reinforcing material and the metal plate are placed on the leads, and then resin-molded to form outer leads And manufacturing a resin-encapsulated semiconductor device by solder plating.