JPH1174483A5 - - Google Patents

Info

Publication number
JPH1174483A5
JPH1174483A5 JP1998150348A JP15034898A JPH1174483A5 JP H1174483 A5 JPH1174483 A5 JP H1174483A5 JP 1998150348 A JP1998150348 A JP 1998150348A JP 15034898 A JP15034898 A JP 15034898A JP H1174483 A5 JPH1174483 A5 JP H1174483A5
Authority
JP
Japan
Prior art keywords
groove
cross
section
trench
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998150348A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174483A (ja
JP4330671B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP15034898A priority Critical patent/JP4330671B2/ja
Priority claimed from JP15034898A external-priority patent/JP4330671B2/ja
Priority to US09/106,082 priority patent/US6100132A/en
Priority to KR1019980025482A priority patent/KR100312142B1/ko
Publication of JPH1174483A publication Critical patent/JPH1174483A/ja
Priority to US09/598,379 priority patent/US6600189B1/en
Publication of JPH1174483A5 publication Critical patent/JPH1174483A5/ja
Application granted granted Critical
Publication of JP4330671B2 publication Critical patent/JP4330671B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP15034898A 1997-06-30 1998-05-29 半導体装置の製造方法 Expired - Fee Related JP4330671B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15034898A JP4330671B2 (ja) 1997-06-30 1998-05-29 半導体装置の製造方法
US09/106,082 US6100132A (en) 1997-06-30 1998-06-29 Method of deforming a trench by a thermal treatment
KR1019980025482A KR100312142B1 (ko) 1997-06-30 1998-06-30 반도체장치및그제조방법
US09/598,379 US6600189B1 (en) 1997-06-30 2000-06-21 Semiconductor device and semiconductor device manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17499197 1997-06-30
JP9-174991 1997-06-30
JP15034898A JP4330671B2 (ja) 1997-06-30 1998-05-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1174483A JPH1174483A (ja) 1999-03-16
JPH1174483A5 true JPH1174483A5 (fr) 2005-10-06
JP4330671B2 JP4330671B2 (ja) 2009-09-16

Family

ID=26479973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15034898A Expired - Fee Related JP4330671B2 (ja) 1997-06-30 1998-05-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4330671B2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3946406B2 (ja) 2000-03-30 2007-07-18 株式会社東芝 熱型赤外線センサの製造方法
JP4534500B2 (ja) * 2003-05-14 2010-09-01 株式会社デンソー 半導体装置の製造方法
US6913968B2 (en) 2003-07-30 2005-07-05 International Business Machines Corporation Method and structure for vertical DRAM devices with self-aligned upper trench shaping
JP2005150398A (ja) * 2003-11-14 2005-06-09 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法および半導体の表面処理方法
JP2006156973A (ja) * 2004-10-25 2006-06-15 Toyota Motor Corp 絶縁ゲート型半導体装置の製造方法
JP5026718B2 (ja) * 2006-03-31 2012-09-19 トヨタ自動車株式会社 半導体装置の製造方法
US7808028B2 (en) * 2007-04-18 2010-10-05 International Business Machines Corporation Trench structure and method of forming trench structure
JP4550870B2 (ja) * 2007-07-23 2010-09-22 株式会社東芝 半導体装置の製造方法

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