JPH1177518A - Polishing pad - Google Patents
Polishing padInfo
- Publication number
- JPH1177518A JPH1177518A JP25613397A JP25613397A JPH1177518A JP H1177518 A JPH1177518 A JP H1177518A JP 25613397 A JP25613397 A JP 25613397A JP 25613397 A JP25613397 A JP 25613397A JP H1177518 A JPH1177518 A JP H1177518A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing pad
- groove
- pad
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 53
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000011521 glass Substances 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 description 8
- 239000004744 fabric Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 241000270666 Testudines Species 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
(57)【要約】
【課題】 半導体基板、ハードディスク用基板、液晶用
ガラス基板の精密研磨に使用される研磨パッドの改良を
目的とする。
【解決手段】 円形研磨パッドの研磨面上に若干の外周
縁部を残して、連続した溝を形成した研磨パッド。
(57) [PROBLEMS] To improve a polishing pad used for precision polishing of a semiconductor substrate, a substrate for a hard disk, and a glass substrate for a liquid crystal. A polishing pad having a continuous groove formed on a polishing surface of a circular polishing pad while leaving a slight outer peripheral portion.
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体基板、ハード
ディスク用基板、液晶用基板の精密研磨に使用する研磨
パッドの改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a polishing pad used for precision polishing of semiconductor substrates, hard disk substrates, and liquid crystal substrates.
【0002】[0002]
【従来の技術】従来シリコンウエハー等の半導体基板、
ガラス、アルミニウム/ニッケルで構成されたハードデ
ィスク用基板、液晶表示用ガラス基板の精密研磨に、不
織布等の基材の片面に、タテ型発泡構造のウレタン樹脂
層を形成した研磨布(以下スエード調研磨布という)、
ランダムに積層された繊維シートに、ウレタン樹脂を含
浸した研磨布(以下ベロア調研磨布という)、単独発泡
ウレタン樹脂シートが使用されてる。2. Description of the Related Art Conventionally, semiconductor substrates such as silicon wafers,
Polishing cloth (hereinafter referred to as suede polishing) in which a urethane resin layer with a vertical foam structure is formed on one surface of a substrate such as a nonwoven fabric for precision polishing of glass, substrates for hard disks composed of aluminum / nickel, and glass substrates for liquid crystal displays. Cloth)
A polishing cloth (hereinafter referred to as a velor-like polishing cloth) in which a urethane resin is impregnated into a fiber sheet which is randomly laminated, and a single urethane foam resin sheet are used.
【0003】さらに砥粒液(以下スラリーという)の循
環をよくするために、形状が格子柄、菱形柄、亀甲柄等
任意の形状の連続した溝を研磨面に形成した研磨パッド
が使用されている。In order to further improve the circulation of the abrasive liquid (hereinafter referred to as slurry), a polishing pad having a continuous groove having an arbitrary shape such as a lattice pattern, a rhombus pattern, and a turtle pattern formed on a polishing surface is used. I have.
【0004】[0004]
【発明が解決しようとする課題】上記のように研磨パッ
ドの研磨面の全面に格子柄、菱形板、亀甲柄等の連続し
た溝が形成されているため、供給されたスラリーが溝に
沿って研磨パッド外に流出し、研磨に作用するスラリー
の量が少なくなるため、研磨レートの低下、コストアッ
プになる欠点をもっていた。As described above, since continuous grooves such as a lattice pattern, a rhombus plate, and a turtle pattern are formed on the entire surface of the polishing surface of the polishing pad, the supplied slurry flows along the grooves. Since the amount of the slurry flowing out of the polishing pad and acting on the polishing is reduced, the polishing rate is reduced and the cost is increased.
【0005】さらに研磨機が停止したとき、溝の部分の
スラリーが流出し、空気と研磨面が接触し、化学反応が
促進され、研磨面に溝の形状が転字され、研磨面の均一
性を低下させる欠点があった。Further, when the polishing machine is stopped, the slurry in the groove portion flows out, the air comes into contact with the polishing surface, the chemical reaction is promoted, the groove shape is inverted on the polishing surface, and the uniformity of the polishing surface is improved. There was a drawback that lowering.
【0006】[0006]
【課題を解決するための手段】上記の課題を解決するた
めに本発明は円形研磨パッドの研磨面上に、若干の外周
縁部(1)を残して、連続した溝(3)を形成した。According to the present invention, a continuous groove (3) is formed on a polishing surface of a circular polishing pad while leaving a small outer peripheral portion (1). .
【0007】本発明の研磨パッドには、スエード調研磨
布、ベロア調研磨布及び単独発泡構造のウレタン樹脂シ
ートが使用される。For the polishing pad of the present invention, a suede-like polishing cloth, a velor-like polishing cloth and a urethane resin sheet having a single foam structure are used.
【0008】[0008]
【発明の実施の形態】本発明による研磨パッドは研磨物
が接触する部位よりも外側に、ある程度の外周縁部
(1)を残した円形研磨パッドの研磨面(2)上に、金
型、金網等の押型を使用し、加熱、加圧し溝(3)を形
成した。又鋸刃等の切削器具を使用し、研磨面上に溝
(3)を形成した。溝の形状は格子柄、菱形柄、亀甲
柄、渦巻柄、海島柄等任意の連続した柄を選ぶことが出
来る。BEST MODE FOR CARRYING OUT THE INVENTION A polishing pad according to the present invention is provided on a polishing surface (2) of a circular polishing pad having a certain outer peripheral edge (1) outside a portion where a polishing object is in contact with a polishing object. Using a press die such as a wire mesh, heating and pressing were performed to form a groove (3). A groove (3) was formed on the polished surface using a cutting tool such as a saw blade. As the shape of the groove, any continuous pattern such as a lattice pattern, a rhombus pattern, a turtle pattern, a spiral pattern, a sea-island pattern can be selected.
【0009】[0009]
【実施例】図面1及び図面2を参照して説明する。厚さ
0.9mmの不織布(5)の片面に湿式凝固法でタテ型
発泡構造のウレタン樹脂層を形成し、表皮層をバフ加工
にて除去しスエード層(2)を形成したスエード調研磨
布を型抜機にて円形に裁断した。この円形研磨パッドの
研磨面上に、巾20mmのリング上外周縁部(1)を残
して、溝巾1.0mm、溝間隙4.0mmのスチール製
格子柄金型を使用し、温度165℃、圧力250g/c
m、加圧時間3分間、プレス機にて加熱、加圧し、溝巾
1.0mm、溝の深さ0.5mmの格子柄溝(3)を成
型した。なお、リング状外周縁部(1)の巾は、上記実
施例では20mmとしているが、実用上50mm以下に
設定することが望ましい。この研磨パッドを使用し、ハ
ードディスク用アルミニウム/ニッケル基板を研磨した
結果、スラリーの使用量を25%削減することが出来
た。且つ研磨レートを10%向上することが出来た。BRIEF DESCRIPTION OF THE DRAWINGS FIG. A suede-like polishing cloth in which a urethane resin layer having a vertical foam structure is formed on one surface of a nonwoven fabric (5) having a thickness of 0.9 mm by a wet coagulation method, and a skin layer is removed by buffing to form a suede layer (2). Was cut into a circle by a die cutter. A steel grid pattern mold having a groove width of 1.0 mm and a groove gap of 4.0 mm was used on the polishing surface of the circular polishing pad, leaving an outer peripheral portion (1) on a ring having a width of 20 mm. , Pressure 250g / c
m, pressurizing time: 3 minutes, heating and pressurizing with a press machine to form a lattice pattern groove (3) having a groove width of 1.0 mm and a groove depth of 0.5 mm. The width of the ring-shaped outer peripheral portion (1) is set to 20 mm in the above embodiment, but is preferably set to 50 mm or less in practical use. As a result of polishing the aluminum / nickel substrate for a hard disk using this polishing pad, the amount of slurry used could be reduced by 25%. In addition, the polishing rate could be improved by 10%.
【0010】さらに研磨面を検査した結果、研磨面に溝
の形状が転字されておらず、非常に均一な研磨品位であ
った。Further, as a result of inspection of the polished surface, the shape of the groove was not inverted on the polished surface, and the polishing quality was very uniform.
【0011】[0011]
【発明の効果】本発明の研磨パッドは研磨面上に任意の
連続した柄の溝が形成された円形部分と連続した溝が形
成されていない外周縁部とで構成されているため、スラ
リーが溝に沿って研磨パッド外に流出することなく、供
給されたスラリーが研磨に有効に作用するため、スラリ
ーの使用量を大巾に節減することが出来、生産コストを
削減することが出来た。As described above, the polishing pad of the present invention is composed of a circular portion having an arbitrary continuous pattern of grooves formed on the polishing surface and an outer peripheral portion having no continuous grooves formed thereon. Since the supplied slurry effectively acts on polishing without flowing out of the polishing pad along the groove, the amount of slurry used can be greatly reduced, and the production cost can be reduced.
【0012】さらに研磨終了時にスラリーが溝に充分保
持されているために、研磨物の研磨面が空気と接触する
ことがなく、したがって空気による化学反応がなく、均
一な研磨品位がえられた。Further, since the slurry is sufficiently held in the grooves at the end of polishing, the polished surface of the polished material does not come into contact with air, and therefore, there is no chemical reaction due to air, and uniform polishing quality is obtained.
【図1】本発明実施例による研磨パッドの平面図であ
る。FIG. 1 is a plan view of a polishing pad according to an embodiment of the present invention.
【図2】本発明実施例による研磨パッドの断面図であ
る。FIG. 2 is a sectional view of a polishing pad according to an embodiment of the present invention.
1 研磨パッドの外周縁部 2 同パッドのスエード層 3 同パッドの溝 4 同パッドの外周縁 5 同パッドの不織布 REFERENCE SIGNS LIST 1 outer peripheral edge of polishing pad 2 suede layer of same pad 3 groove of same pad 4 outer peripheral edge of same pad 5 nonwoven fabric of same pad
Claims (1)
周縁部を残して、連続した溝を形成した研磨パッド。1. A polishing pad in which a continuous groove is formed on a polishing surface of a circular polishing pad while leaving a slight outer peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25613397A JPH1177518A (en) | 1997-09-03 | 1997-09-03 | Polishing pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25613397A JPH1177518A (en) | 1997-09-03 | 1997-09-03 | Polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1177518A true JPH1177518A (en) | 1999-03-23 |
Family
ID=17288368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25613397A Pending JPH1177518A (en) | 1997-09-03 | 1997-09-03 | Polishing pad |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1177518A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001232554A (en) * | 2000-02-22 | 2001-08-28 | Toyobo Co Ltd | Polishing pad and method for manufacturing thereof |
| KR100698095B1 (en) * | 2005-07-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Molding apparatus for polishing pad and manufacturing method of polishing pad using same |
| WO2019151584A1 (en) * | 2018-02-05 | 2019-08-08 | 에스케이실트론 주식회사 | Polishing pad for wafer polishing apparatus and manufacturing method therefor |
-
1997
- 1997-09-03 JP JP25613397A patent/JPH1177518A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001232554A (en) * | 2000-02-22 | 2001-08-28 | Toyobo Co Ltd | Polishing pad and method for manufacturing thereof |
| KR100698095B1 (en) * | 2005-07-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Molding apparatus for polishing pad and manufacturing method of polishing pad using same |
| WO2019151584A1 (en) * | 2018-02-05 | 2019-08-08 | 에스케이실트론 주식회사 | Polishing pad for wafer polishing apparatus and manufacturing method therefor |
| KR20190094637A (en) * | 2018-02-05 | 2019-08-14 | 에스케이실트론 주식회사 | Wafer polishing pad and Manufacturing Method of it |
| CN111417491A (en) * | 2018-02-05 | 2020-07-14 | 爱思开矽得荣株式会社 | Polishing pad for wafer polishing apparatus and manufacturing method therefor |
| JP2021502266A (en) * | 2018-02-05 | 2021-01-28 | エスケイ・シルトロン・カンパニー・リミテッド | Polishing pad for wafer polishing equipment and its manufacturing method |
| CN111417491B (en) * | 2018-02-05 | 2021-12-21 | 爱思开矽得荣株式会社 | Polishing pad for wafer polishing apparatus and manufacturing method therefor |
| US11534889B2 (en) | 2018-02-05 | 2022-12-27 | Sk Siltron Co., Ltd. | Polishing pad for wafer polishing apparatus and manufacturing method therefor |
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