JPH1188771A - Drive method for solid-state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the power consumption of the solid-state image pickup device having a horizontal charge transfer register at both ends of a vertical charge transfer register by applying a prescribed 1st DC voltage to a charge transfer electrode of a 1st horizontal charge transfer register or a 2nd horizontal charge transfer register from which no video signal is extracted. SOLUTION: In the case of extracting a signal from a 1st horizontal charge transfer register 304a, a charge transfer electrode of a 2nd horizontal charge transfer register 304b and a 2nd reset gate electrode are fixed to a ground level. Furthermore, in the case of extracting a signal from the 2nd horizontal charge transfer register 304b, a charge transfer electrode of the 1st horizontal charge transfer register 304a and a 1st reset gate electrode are fixed to a ground level. Thus, the power consumption is reduced by stopping the transfer operation of the horizontal charge transfer register 304a or 304b from which no video signal is extracted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device and, more particularly, to a method for driving a solid-state imaging device having a horizontal charge transfer register at both ends of a vertical charge transfer register.

[0002]

2. Description of the Related Art FIG. 3 is a plan view showing the structure of a solid-state imaging device.

The solid-state imaging device shown in FIG. 3 is called an interline transfer type and has a horizontal charge transfer register at both ends of a vertical charge transfer register. For example, Japanese Patent Application Laid-Open No. 58-195371 discloses such a device. The structure is disclosed.

Referring to FIG. 3, a conventional solid-state imaging device includes a plurality of vertical charge transfer registers 302 provided on a semiconductor substrate 301, each of which is composed of a charge transfer device capable of transferring charges bidirectionally. A plurality of photoelectric conversion elements 303 arranged corresponding to the registers, a first horizontal charge transfer register 304a and a second horizontal charge transfer register 304 electrically connected to both ends of each vertical charge transfer register 302 and capable of transferring charges in two directions. And the horizontal charge transfer register 304b.

At both ends of the first horizontal charge transfer register 304a and the second horizontal charge transfer register 304b, a first charge detection section 305a for outputting a video signal based on the transferred charges, and a second charge detection section The unit 305b, the third charge detection unit 305c, and the fourth charge detection unit 305d are connected, and the first charge detection unit 305a to the fourth charge detection unit 30 are connected.
The output signal of 5d is output to the outside via the first output terminal 306a, the second output terminal 306b, the third output terminal 306c, and the fourth output terminal 306d.

The vertical charge transfer register 302 shown in FIG.
In the conventional solid-state imaging device having horizontal charge transfer registers at both ends of the device, charges can be bidirectionally transferred to the vertical charge transfer register 302, the first horizontal charge transfer register 304a, and the second horizontal charge transfer register 304b. A charge transfer device is provided. By switching the combination of transfer pulses applied to these charge transfer devices by an external circuit, the scanning direction of the imaging screen can be arbitrarily changed.

For example, in the solid-state imaging device shown in FIG. 3, the transfer direction of each vertical charge transfer register 302 is selected in the downward direction in the figure, and the transfer direction of the first horizontal charge transfer register 304a is shifted leftward in the figure. When selected, the signal charges stored in each photoelectric conversion unit 303 are read out by the corresponding vertical charge transfer register 302 according to the amount of incident light, and the read out signal charges are sequentially transferred in the downward direction in the figure. Transferred to the horizontal charge transfer register 304a. Further, the signal charges transferred to the horizontal charge transfer register 304a are sequentially transferred to the left in the drawing, and output as video signals from the first output terminal 306a via the first charge detection unit 305a. The screen scanning in this case is a mode in which horizontal scanning from the lower left to the right in FIG. 3 is sequentially repeated upward in each horizontal scanning cycle (hereinafter, this mode is referred to as mode A).

On the other hand, when the transfer direction of each vertical charge transfer register 302 is selected downward in the figure and the transfer direction of the first horizontal charge transfer register 304a is selected rightward in the figure,
The video signal is output from the second output terminal 306b via the second charge detection unit 305b. The screen scanning mode in this case is a mode in which horizontal scanning from the lower right to the left in FIG. 3 is sequentially repeated upward in each horizontal scanning cycle (hereinafter, this mode is referred to as mode B).

Similarly, when the transfer direction of each vertical charge transfer register 302 is selected in the upper direction in the figure and the transfer direction of the second horizontal charge transfer register 304b is selected in the left direction in the figure, the video signal becomes the third signal. Through the charge detection unit 305c of FIG.
Is output from the output terminal 306c. The screen scanning mode in this case is a horizontal scanning from the upper left to the right in FIG.
In this mode, the mode is sequentially repeated downward in each horizontal scanning cycle (hereinafter, this mode is referred to as mode C).

Further, when the transfer direction of each vertical charge transfer register 302 is selected in the upper direction in the figure and the transfer direction of the second horizontal charge transfer register 304b is selected in the right direction in the figure, the video signal becomes the fourth signal. Fourth through the charge detection unit 305d
Output terminal 306d. The screen scanning mode in this case is a horizontal scanning from the upper right to the left in FIG.
This mode is a mode that repeats downward sequentially in each horizontal scanning cycle (hereinafter, this mode is referred to as mode D).

In a video camera using the above-mentioned conventional solid-state imaging device, first, the screen scanning mode is set to mode A, and the reproduced image based on the video signal output from the first output terminal 306a is correct in both the vertical and horizontal directions. Adjust the positional relationship between the camera and the subject so that a standing image is obtained. Here, when the mode is switched from the mode A to the mode B, the reproduced image based on the video signal output from the second output terminal 306b is an upright image vertically and an inverted image right and left. When the mode is switched from the mode A to the mode C, the reproduced image based on the video signal output from the third output terminal 306c is an upright image on the left and right and an inverted image on the upper and lower sides.

When the mode is further switched to mode D, the reproduced image based on the video signal output from the fourth output terminal 306d becomes an inverted image in all directions.

In the above description, the first horizontal charge transfer register 304a and the second horizontal charge transfer register 30
4b has been described as an example in which charges can be transferred bidirectionally, but the first horizontal charge transfer register 304a and the second
When the horizontal charge transfer register 304b can transfer charges only in one direction, the mode A and the mode C or the mode B and the mode D can be set.

Next, a case where the vertical charge transfer register is driven in four phases (driven by four kinds of timing pulses) and the horizontal charge transfer register is driven in two phases (driven by two kinds of timing pulses) is described. A driving method of the solid-state imaging device will be described as an example. Note that the first horizontal charge transfer register 304a and the second horizontal charge transfer register 304
b makes it possible to transfer charges only in one direction.

FIG. 4 is a sectional view showing the structure of the vertical charge transfer register of the solid-state imaging device shown in FIG. 3 along the charge transfer direction.

Referring to FIG. 4, an N-type diffusion layer 402 serving as a charge transfer region of a vertical charge transfer register 302 is formed on one main surface of a P-type semiconductor substrate 401. Further, a charge transfer electrode 404 is formed on the surface of the P-type semiconductor substrate 401 via a first insulating film 403a.
04 is covered with a light-shielding film 405 via a second insulating film 403b.

FIG. 5 is a sectional view showing the structure of the horizontal charge transfer register of the solid-state imaging device shown in FIG. 3 along the charge transfer direction.

Referring to FIG. 5, an N-type diffusion layer 502 serving as a charge transfer region of a horizontal charge transfer register is formed on one main surface of a P-type semiconductor substrate 401. N-type regions 503 serving as barrier portions are formed at equal intervals along the charge transfer direction. Further, the charge transfer electrodes 504 are arranged on the surface of the P-type semiconductor substrate 401 via the first insulating film 403a. The charge transfer electrode 504 on the N-type diffusion layer 502 is
And the charge transfer electrodes 504 on the N− type region 503 as one set, horizontal drive pulses φH1 and φH2 are applied every other set. Further, the charge transfer electrode 504 is covered with a light shielding film 405 via the second insulating film 403b.

At one end of the horizontal charge transfer register on the P-type semiconductor substrate 401, an output gate electrode 505 to which a DC voltage is applied via a first insulating film 403a and a reset gate electrode 506 to which a pulse is applied are provided. Is formed. The output gate electrode 505 of the P-type semiconductor substrate 401
In addition, a first N + type diffusion layer 507 serving as a floating capacitance is provided in a region between the reset gate electrodes 506. On the opposite side of the reset gate electrode 506 from the first N + type diffusion layer 507, a second
N + type diffusion layer 508 is provided.

The first N + type diffusion layer 507 is connected to the output section 509, and the second N + type diffusion layer 507 serves as a reset drain.
The mold diffusion layer 508 is fixed at a predetermined DC potential.

FIG. 6 is a diagram showing operation timings of driving pulses for driving the solid-state imaging device shown in FIG.
FIG. 2A is a timing chart showing timing when a signal is taken out from the first horizontal charge transfer register, and FIG. 2B is a timing chart showing timing when a signal is taken out from the second horizontal charge transfer register. is there. Here, the first output terminal 306 shown in FIG.
The figure shows a case where an output signal is extracted from a and the third output terminal 306c.

6A and 6B, φV1 to φV1
V4 is a drive pulse applied to the vertical charge transfer register 302, φH1A and φH2A are drive pulses applied to the first horizontal charge transfer register 304a, φH1B and φH2
B is a driving pulse applied to the second horizontal charge transfer register 304b, and φRA is a first horizontal charge transfer register 304b.
A drive pulse φa for the first reset gate electrode and a drive pulse for the second reset gate electrode of the second horizontal charge transfer register 304b.

In the horizontal blanking period, a pulse is applied to the charge transfer electrode 404 of each vertical charge transfer register 302, and charges are transferred in each vertical charge transfer register 302. In the horizontal transfer period, a pulse is applied to the charge transfer electrode 504 and the reset gate electrode 506 of the horizontal charge transfer register, and charges are transferred in the horizontal charge transfer register.

As shown in FIGS. 6A and 6B,
The timing of the pulse φV1 to φV4 applied to the vertical charge transfer electrode 404 differs between the case where the signal is extracted from the first horizontal charge transfer register 304a and the case where the signal is extracted from the second horizontal charge transfer register 304b. Therefore, the drive mode can be changed by switching the charge transfer pulse applied from the external circuit.

[0025]

When the solid-state imaging device as described above is driven, the power consumption of each charge transfer register is determined by two factors: electrode capacity, drive frequency, and drive pulse amplitude.
Defined as a product of powers. For example, when used in an NTSC video camera, the vertical drive frequency is about 16 KHz,
The horizontal drive frequency is about 15 MHz. The capacitance of the vertical charge transfer electrode is about 4000 pF, the capacitance of the horizontal charge transfer electrode is about 100 pF, the amplitude of the vertical drive pulse is about 10 V, and the amplitude of the horizontal drive pulse is about 5 V.

Therefore, the power consumption of the vertical charge transfer register is about 6.4 mW, and the power consumption of the horizontal charge transfer register is about 37.5 mW. Further, power consumed by components other than the charge transfer register includes power consumed by an output amplifier. Power supply voltage of output amplifier is 15V, current consumption is about 2m
Assuming that A, the power consumption of the output amplifier is 30 mW.

Thus, while the solid-state imaging device having the horizontal charge transfer register only at one end of the vertical charge transfer register consumes about 74 mW, the solid-state image pickup device has the horizontal charge transfer register at both ends of the vertical charge transfer register. In the case of the image pickup device, it increases to 111 mW.

On the other hand, when used in an HDTV video camera, the vertical drive frequency is about 34 KHz and the horizontal drive frequency is about 74 MHz. The capacity of the vertical charge transfer electrode is about 20,000 pF, the capacity of the horizontal charge transfer electrode is about 200 pF, and the amplitude of the vertical drive pulse is about 10 pF.
V, the amplitude of the horizontal drive pulse is about 5V.

Therefore, the power consumption of the vertical charge transfer register is about 68 mW, and the power consumption of the horizontal charge transfer register is about 370 mW. Also, if the power supply voltage of the amplifier is 15
V and the current consumption is about 10 mA, the power consumption of the amplifier is 150 mW.

Thus, while the solid-state imaging device having the horizontal charge transfer register only at one end of the vertical charge transfer register consumes about 588 mW, the solid-state image pickup device has the horizontal charge transfer register at both ends of the vertical charge transfer register. In the case of the imaging device, the power consumption increases to 958 mW.

As described above, in the solid-state imaging device having the horizontal charge transfer registers at both ends of the vertical charge transfer register, the power consumption is significantly larger than in the solid-state imaging device having the horizontal charge transfer register only at one end of the vertical charge transfer register. There was a problem that increases.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and reduces the power consumption of a solid-state imaging device having horizontal charge transfer registers at both ends of a vertical charge transfer register. It is an object of the present invention to provide a driving method of a solid-state imaging device that can be used.

[0033]

In order to achieve the above object, a method for driving a solid-state imaging device according to the present invention comprises a plurality of photoelectric conversion elements for accumulating signal charges corresponding to the amount of incident light, and a method for storing the signal from the photoelectric conversion elements. A plurality of vertical charge transfer registers for reading charges and transferring the signal charges in two directions; and a first horizontal charge connected to one end of the plurality of vertical charge transfer registers for transferring the signal charges in two directions. A solid-state imaging device for extracting a video signal from a solid-state imaging device, the solid-state imaging device having a transfer register and a second horizontal charge transfer register connected to the other ends of the plurality of vertical charge transfer registers for bidirectionally transferring the signal charges; In the method for driving an imaging device, the charge of one of the first horizontal charge transfer register and the second horizontal charge transfer register from which the video signal is not extracted. And applying a predetermined first DC voltage to feeding electrode.

At this time, the first DC voltage may be the same as the high level of the driving pulse applied to one of the horizontal charge transfer registers for performing the transfer operation, or may be the ground potential.

A charge detection unit connected to at least one end of the first horizontal charge transfer register and the second horizontal charge transfer register and outputting a video signal based on the transferred signal charge; The first horizontal charge transfer register or the second
And a predetermined second DC voltage may be applied to a reset gate electrode of the charge detection unit connected to one of the horizontal charge transfer registers, and at this time, the transfer operation of the second DC voltage is performed. The potential may be the same as the high level of the drive pulse applied to the reset gate electrode of the charge detection unit connected to one of the horizontal charge transfer registers, or may be the ground potential.

The driving method of the solid-state imaging device as described above is as follows.
By applying a predetermined DC voltage to the charge transfer electrode of the horizontal charge transfer register that does not contribute to the output of the video signal or to the reset gate electrode of the charge detection unit connected to the horizontal charge transfer register, the signal of the horizontal charge transfer register The charge transfer operation stops.

[0037]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 is a diagram showing operation timings of driving pulses in a driving method of a solid-state imaging device according to a first embodiment of the present invention, and FIG. 5B is a timing chart showing the timing when extracting a signal from the horizontal charge transfer register, and FIG. 4B is a timing chart showing the timing when extracting a signal from the second horizontal charge transfer register.

Since the configuration of the solid-state imaging device is the same as that of the conventional solid-state imaging device shown in FIG. 3, its description is omitted. Hereinafter, a case where signals are extracted from the first output terminal and the third output terminal of the solid-state imaging device will be described as an example.

In FIGS. 1A and 1B, φV1 to φV1
V4 is a drive pulse applied to the vertical charge transfer register, φ
H1A and φH2A are transfer pulses applied to the first horizontal charge transfer register, φH1B and φH2B are drive pulses applied to the second horizontal charge transfer register, and φRA is the first
Is a drive pulse applied to the first reset gate electrode of the horizontal charge transfer register, and φRB is a drive pulse applied to the second reset gate electrode of the second horizontal charge transfer register.

In the horizontal blanking period, a drive pulse is applied to each charge transfer electrode of the vertical charge transfer register, and charges are transferred in the vertical charge transfer register. On the other hand, in the horizontal transfer period, a driving pulse is applied to each of the charge transfer electrode and the reset gate electrode of the horizontal charge transfer register, and charges are transferred in the horizontal charge transfer register.
As shown in FIGS. 1A and 1B, the case where a signal is taken out from the first horizontal charge transfer register and the case where a signal is taken out from the second horizontal charge transfer register are the same as those shown in FIGS. Pulse φV applied to the charge transfer electrode
The timing of 1 to φV4 is changed. In the present embodiment, when extracting a signal from the first horizontal charge transfer register, the charge transfer electrode and the second reset gate electrode of the second horizontal charge transfer register are fixed to the ground potential. When a signal is taken out from the second horizontal charge transfer register, the charge transfer electrode and the first reset gate electrode of the first horizontal charge transfer register are fixed to the ground potential. As described above, the power consumption can be reduced by stopping the transfer operation of the horizontal charge transfer register from which the video signal is not extracted.

For example, a solid-state imaging device having horizontal charge transfer registers at both ends of a vertical charge transfer register
When used in a TSC video camera, the vertical drive frequency is about 16 KHz, the horizontal drive frequency is about 15 MHz, the capacity of the vertical charge transfer electrode is about 4000 pF, and the capacity of the horizontal charge transfer electrode is about 100 pF. The amplitude of the vertical drive pulse is about 10 V, and the amplitude of the horizontal drive pulse is about 5 V. Therefore, the power consumption of the vertical charge transfer register is about 6.4 mW, and the power consumption of the horizontal charge transfer register is about 38 mW. The power consumption of the output amplifier is 3
0 mW. Therefore, the power consumption when used in an NTSC video camera is about 74 mW, which is about 2/3 that of the conventional driving method.

On the other hand, a solid-state imaging device having horizontal charge transfer registers at both ends of a vertical charge transfer register
When used in a TV video camera, the vertical drive frequency is about 34 KHz, the horizontal drive frequency is about 74 MHz, the capacity of the vertical charge transfer electrode is about 20,000 pF, and the capacity of the horizontal charge transfer electrode is about 200 pF. The amplitude of the vertical drive pulse is about 10 V, and the amplitude of the horizontal drive pulse is about 5 V. Therefore, the power consumption of the vertical charge transfer register is about 68 mW, and the power consumption of the horizontal charge transfer register is about 370 mW. If the power supply voltage of the output amplifier is 15 V and the current is about 10 mA, the power consumption of the output amplifier is 150 mW.

Therefore, the power consumption when used in an HDTV video camera is about 590 mW, and the power consumption is reduced to about 60% as compared with the conventional driving method.

Further, since the power consumption is reduced, a rise in the temperature of the solid-state imaging device is suppressed, so that the dark current is reduced and S
/ N ratio is improved.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to the drawings.

FIG. 2 is a diagram showing operation timings of driving pulses according to a second embodiment of the driving method of the solid-state imaging device of the present invention. FIG. 2A shows a signal from the first horizontal charge transfer register. FIG. 4B is a timing chart showing the timing when the signal is taken out, and FIG. 3B is a timing chart showing the timing when the signal is taken out from the second horizontal charge transfer register. The notation in FIG. 2 is the same as that in FIG.

The driving method of the solid-state imaging device according to the present embodiment is characterized in that the DC voltage applied to the charge transfer electrode and the reset gate electrode of the horizontal charge transfer register from which the video signal is not taken out is not set to the ground potential. This is different from the first embodiment.

That is, when extracting a signal from the first horizontal charge transfer register, the high level of the horizontal drive pulses φH1A and φH2A applied to the first horizontal charge transfer register is applied to the charge transfer electrode of the second horizontal charge transfer register. A DC voltage having substantially the same potential is applied. Further, a DC voltage having substantially the same potential as the high level of the drive pulse φRA applied to the first reset gate electrode is applied to the second reset gate electrode. Note that horizontal drive pulses φH1A and φH2A are applied to the charge transfer electrodes of the first horizontal charge transfer register.
And a drive pulse φ is applied to the first reset gate electrode.
Apply RA.

Similarly, when extracting a signal from the second horizontal charge transfer register, the horizontal drive pulses φH1B and φH2B applied to the second horizontal charge transfer register are applied to the charge transfer electrodes of the first horizontal charge transfer register. A DC voltage having almost the same potential as the level is applied. Further, a DC voltage having substantially the same potential as the high level of the drive pulse φRB applied to the second reset gate electrode is applied to the first reset gate electrode.

In the method of driving the solid-state imaging device according to the present embodiment, the power consumption is reduced as in the first embodiment. Further, in the second embodiment, since the dark current generated in the horizontal charge transfer register is swept out to the reset drain via the reset gate electrode, there is an effect that noise is further reduced.

In the first and second embodiments, a predetermined DC voltage is applied to the reset gate electrode of the charge detection unit connected to the horizontal charge transfer register from which the video signal is not taken out. Although it is applied, a drive pulse may be applied. This is because the capacitance of the reset gate electrode is about 30 fF, the amplitude of the driving pulse is about 5 V, and the driving frequency is basically the same as that of the horizontal charge transfer register. It is about 56 μW. That is, the power consumption when the drive pulse is applied to the reset gate electrode can be almost ignored.

[0053]

Since the present invention is configured as described above, the following effects can be obtained.

By applying a predetermined DC voltage to each of the charge transfer electrode of the horizontal charge transfer register from which the video signal is not taken out and the reset gate electrode of the charge detection unit connected to the horizontal charge transfer register, the horizontal signal is applied to the horizontal. Since the transfer operation of the charge transfer register is stopped, power consumption can be reduced.

Further, since the power consumption is reduced, the temperature rise of the solid-state imaging device is suppressed, so that dark current is reduced and S
/ N ratio is improved.

[Brief description of the drawings]

FIG. 1 is a diagram showing operation timings of drive pulses according to a first embodiment of a method for driving a solid-state imaging device of the present invention;
FIG. 2A is a timing chart showing timing when a signal is taken out from the first horizontal charge transfer register, and FIG. 2B is a timing chart showing timing when a signal is taken out from the second horizontal charge transfer register. is there.

FIG. 2 is a diagram illustrating operation timings of driving pulses according to a second embodiment of the driving method of the solid-state imaging device of the present invention;
FIG. 2A is a timing chart showing timing when a signal is taken out from the first horizontal charge transfer register, and FIG. 2B is a timing chart showing timing when a signal is taken out from the second horizontal charge transfer register. is there.

FIG. 3 is a plan view illustrating a configuration of a solid-state imaging device.

4 is a cross-sectional view illustrating a structure of a vertical charge transfer register of the solid-state imaging device illustrated in FIG. 3 along a charge transfer direction.

5 is a cross-sectional view illustrating a structure of a horizontal charge transfer register of the solid-state imaging device illustrated in FIG. 3 along a charge transfer direction.

FIG. 6 is a diagram showing operation timings of drive pulses for driving the solid-state imaging device shown in FIG. 3, and FIG.
FIG. 4 is a timing chart showing timing when a signal is taken out from the first horizontal charge transfer register, and FIG. 4B is a timing chart showing timing when a signal is taken out from the second horizontal charge transfer register.

[Explanation of symbols]

 301 semiconductor substrate 302 vertical charge transfer register 303 photoelectric conversion element 304a first horizontal charge transfer register 304b second horizontal charge transfer register 305a first charge detection unit 305b second charge detection unit 305c third charge detection unit 305d Fourth charge detection unit 306a First output terminal 306b Second output terminal 306c Third output terminal 306d Fourth output terminal 401 P-type semiconductor substrate 402 N-type diffusion layer 403a First insulating film 403b Second Insulating films 404, 504 Charge transfer electrodes 405 Light shielding film 502 N-type diffusion layer 503 N- type region 505 Output gate electrode 506 Reset gate electrode 507 First N + type diffusion layer 508 Second N + type diffusion layer 509 Output part

Claims (6)

[Claims] A plurality of photoelectric conversion elements for accumulating signal charges corresponding to the amount of incident light; a plurality of vertical charge transfer registers for reading out the signal charges from the photoelectric conversion elements and bidirectionally transferring the signal charges; A first horizontal charge transfer register connected to one end of the plurality of vertical charge transfer registers for bidirectionally transferring the signal charge; a first horizontal charge transfer register connected to the other end of the plurality of vertical charge transfer registers; A second horizontal charge transfer register for bidirectionally transferring the image signal; and a method for driving a solid-state imaging device for extracting a video signal from the solid-state imaging device. A solid-state imaging device, wherein a predetermined first DC voltage is applied to one of the charge transfer electrodes of a transfer register or the second horizontal charge transfer register. Driving method. 2. The method according to claim 1, wherein the first DC voltage has the same potential as a high level of a driving pulse applied to one of the horizontal charge transfer registers for performing a transfer operation. 3. The method according to claim 1, wherein the first DC voltage is a ground potential. 4. A charge detection unit that is connected to at least one end of the first horizontal charge transfer register and the second horizontal charge transfer register and outputs a video signal based on the transferred signal charge, Applying a predetermined second DC voltage to a reset gate electrode of the charge detection unit connected to one of the first horizontal charge transfer register and the second horizontal charge transfer register from which no video signal is taken out Claim 1
4. A method for driving a solid-state imaging device according to claim 1. 5. The second DC voltage has the same potential as a high level of a drive pulse applied to a reset gate electrode of the charge detection unit connected to one of the horizontal charge transfer registers for performing a transfer operation. The driving method of the solid-state imaging device according to the above. 6. The driving method for a solid-state imaging device according to claim 4, wherein the second DC voltage is a ground potential.