JPH1197706A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH1197706A
JPH1197706A JP9276576A JP27657697A JPH1197706A JP H1197706 A JPH1197706 A JP H1197706A JP 9276576 A JP9276576 A JP 9276576A JP 27657697 A JP27657697 A JP 27657697A JP H1197706 A JPH1197706 A JP H1197706A
Authority
JP
Japan
Prior art keywords
region
layer
conductive layer
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9276576A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1197706A5 (th
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9276576A priority Critical patent/JPH1197706A/ja
Priority to US09/157,939 priority patent/US6121660A/en
Priority to KR1019980040090A priority patent/KR100567145B1/ko
Publication of JPH1197706A publication Critical patent/JPH1197706A/ja
Priority to US09/645,578 priority patent/US6680223B1/en
Priority to US10/428,092 priority patent/US6924528B2/en
Publication of JPH1197706A5 publication Critical patent/JPH1197706A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Shift Register Type Memory (AREA)
  • Thin Film Transistor (AREA)
JP9276576A 1997-09-23 1997-09-23 半導体装置およびその作製方法 Withdrawn JPH1197706A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9276576A JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法
US09/157,939 US6121660A (en) 1997-09-23 1998-09-22 Channel etch type bottom gate semiconductor device
KR1019980040090A KR100567145B1 (ko) 1997-09-23 1998-09-23 반도체장치및그제조방법
US09/645,578 US6680223B1 (en) 1997-09-23 2000-08-25 Semiconductor device and method of manufacturing the same
US10/428,092 US6924528B2 (en) 1997-09-23 2003-05-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9276576A JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004216656A Division JP4286741B2 (ja) 2004-07-26 2004-07-26 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH1197706A true JPH1197706A (ja) 1999-04-09
JPH1197706A5 JPH1197706A5 (th) 2005-05-26

Family

ID=17571402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9276576A Withdrawn JPH1197706A (ja) 1997-09-23 1997-09-23 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH1197706A (th)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002176001A (ja) 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置
JP2002246395A (ja) * 2001-02-16 2002-08-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2002246394A (ja) * 2001-02-16 2002-08-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2005051211A (ja) * 2003-07-14 2005-02-24 Semiconductor Energy Lab Co Ltd 発光装置
KR100500068B1 (ko) * 2000-11-07 2005-07-18 산요덴키가부시키가이샤 보텀 게이트형 박막 트랜지스터 및 그 제조 방법
JP2005254450A (ja) * 2004-03-11 2005-09-22 Palo Alto Research Center Inc 高電圧薄膜トランジスタを使用するｍｅｍｓ装置のための集積化ドライバ電子工学
JP2008010889A (ja) * 2003-07-14 2008-01-17 Semiconductor Energy Lab Co Ltd 発光装置、電子機器
US7416928B2 (en) 2004-09-08 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2008123088A1 (ja) * 2007-04-04 2008-10-16 Sony Corporation 薄膜トランジスタおよびその製造方法ならびに表示装置
US7575985B2 (en) 2000-12-05 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP2010225780A (ja) * 2009-03-23 2010-10-07 Casio Computer Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2011199300A (ja) * 2003-07-14 2011-10-06 Semiconductor Energy Lab Co Ltd 発光装置

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100500068B1 (ko) * 2000-11-07 2005-07-18 산요덴키가부시키가이샤 보텀 게이트형 박막 트랜지스터 및 그 제조 방법
US7575985B2 (en) 2000-12-05 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP2002176001A (ja) 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置
KR101017861B1 (ko) * 2000-12-05 2011-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR100962054B1 (ko) * 2000-12-05 2010-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
JP2002246395A (ja) * 2001-02-16 2002-08-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2002246394A (ja) * 2001-02-16 2002-08-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2011199300A (ja) * 2003-07-14 2011-10-06 Semiconductor Energy Lab Co Ltd 発光装置
JP2008010889A (ja) * 2003-07-14 2008-01-17 Semiconductor Energy Lab Co Ltd 発光装置、電子機器
JP2005051211A (ja) * 2003-07-14 2005-02-24 Semiconductor Energy Lab Co Ltd 発光装置
US8319219B2 (en) 2003-07-14 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8373166B2 (en) 2003-07-14 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8735896B2 (en) 2003-07-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2005254450A (ja) * 2004-03-11 2005-09-22 Palo Alto Research Center Inc 高電圧薄膜トランジスタを使用するｍｅｍｓ装置のための集積化ドライバ電子工学
US7416928B2 (en) 2004-09-08 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101110765B1 (ko) 2004-09-08 2012-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
WO2008123088A1 (ja) * 2007-04-04 2008-10-16 Sony Corporation 薄膜トランジスタおよびその製造方法ならびに表示装置
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
KR101450043B1 (ko) * 2007-04-04 2014-10-13 소니 주식회사 박막 트랜지스터 및 그 제조 방법 및 표시 장치
JP2010225780A (ja) * 2009-03-23 2010-10-07 Casio Computer Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法

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