JPS4824601B1 - - Google Patents

Info

Publication number
JPS4824601B1
JPS4824601B1 JP45095282A JP9528270A JPS4824601B1 JP S4824601 B1 JPS4824601 B1 JP S4824601B1 JP 45095282 A JP45095282 A JP 45095282A JP 9528270 A JP9528270 A JP 9528270A JP S4824601 B1 JPS4824601 B1 JP S4824601B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45095282A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4824601B1 publication Critical patent/JPS4824601B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)
  • Silicon Compounds (AREA)
JP45095282A 1969-11-29 1970-10-30 Pending JPS4824601B1 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960088A DE1960088C3 (de) 1969-11-29 1969-11-29 Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes

Publications (1)

Publication Number Publication Date
JPS4824601B1 true JPS4824601B1 (da) 1973-07-23

Family

ID=5752523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45095282A Pending JPS4824601B1 (da) 1969-11-29 1970-10-30

Country Status (6)

Country Link
US (1) US3716341A (da)
JP (1) JPS4824601B1 (da)
DE (1) DE1960088C3 (da)
DK (1) DK123280B (da)
FR (1) FR2072242A5 (da)
GB (1) GB1284008A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3520067A1 (de) * 1985-06-04 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
KR20040044146A (ko) * 2002-11-19 2004-05-27 가부시끼가이샤 도꾸야마 플루오르화 금속용 단결정 인출 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092576B (de) * 1957-11-15 1960-11-10 Siemens Ag Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses
US3117859A (en) * 1957-12-30 1964-01-14 Westinghouse Electric Corp Zone refining process
NL235481A (da) * 1958-02-19
DE1208292B (de) * 1963-03-29 1966-01-05 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US3260573A (en) * 1963-06-26 1966-07-12 Siemens Ag Zone melting gallium in a recycling arsenic atmosphere
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
FR1482659A (fr) * 1965-06-10 1967-05-26 Siemens Ag Dispositif pour la fusion de zone sans creuset
DE1544301A1 (de) * 1966-09-28 1970-05-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar

Also Published As

Publication number Publication date
GB1284008A (en) 1972-08-02
FR2072242A5 (da) 1971-09-24
DK123280B (da) 1972-06-05
US3716341A (en) 1973-02-13
DE1960088B2 (de) 1973-12-20
DE1960088A1 (de) 1971-06-03
DE1960088C3 (de) 1974-07-25

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