JPS4843285A - - Google Patents
Info
- Publication number
- JPS4843285A JPS4843285A JP9416572A JP9416572A JPS4843285A JP S4843285 A JPS4843285 A JP S4843285A JP 9416572 A JP9416572 A JP 9416572A JP 9416572 A JP9416572 A JP 9416572A JP S4843285 A JPS4843285 A JP S4843285A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/644—Anisotropic liquid etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18481971A | 1971-09-29 | 1971-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4843285A true JPS4843285A (ja) | 1973-06-22 |
Family
ID=22678479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9416572A Pending JPS4843285A (ja) | 1971-09-29 | 1972-09-21 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3699407A (ja) |
| JP (1) | JPS4843285A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329090A (en) * | 1976-08-31 | 1978-03-17 | Oki Electric Ind Co Ltd | Semiconductor photo coupler |
| JPH01182260A (ja) * | 1987-12-26 | 1989-07-20 | Yoshino Kogyosho Co Ltd | 冷凍容器用蓋体 |
| EP0528774A1 (en) * | 1991-08-08 | 1993-02-24 | FEBA S.d.f. di Boldrini Andrea e Forner Egidio | Method and device for offset varnishing |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3780357A (en) * | 1973-02-16 | 1973-12-18 | Hewlett Packard Co | Electroluminescent semiconductor display apparatus and method of fabricating the same |
| US4005312A (en) * | 1973-11-08 | 1977-01-25 | Lemelson Jerome H | Electro-optical circuits and manufacturing techniques |
| GB1478152A (en) * | 1974-10-03 | 1977-06-29 | Standard Telephones Cables Ltd | Light emissive diode |
| JPS5642148B2 (ja) * | 1975-01-24 | 1981-10-02 | ||
| JPS5293285A (en) * | 1976-02-02 | 1977-08-05 | Hitachi Ltd | Structure for semiconductor device |
| US4040078A (en) * | 1976-05-11 | 1977-08-02 | Bell Telephone Laboratories, Incorporated | Opto-isolators and method of manufacture |
| US5019876A (en) * | 1978-07-14 | 1991-05-28 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor photo-electric converter |
| US4358676A (en) * | 1980-09-22 | 1982-11-09 | Optical Information Systems, Inc. | High speed edge illumination photodetector |
| US5753928A (en) * | 1993-09-30 | 1998-05-19 | Siemens Components, Inc. | Monolithic optical emitter-detector |
| US5448077A (en) * | 1993-09-30 | 1995-09-05 | Siemens Components Inc. | Monolithic optical emitter-detector having a control amplifier with a feedback signal |
| US6891685B2 (en) * | 2001-05-17 | 2005-05-10 | Sioptical, Inc. | Anisotropic etching of optical components |
| US6710376B2 (en) * | 2001-09-04 | 2004-03-23 | Eugene Robert Worley | Opto-coupler based on integrated forward biased silicon diode LED |
| US20030075672A1 (en) * | 2001-10-19 | 2003-04-24 | Yet-Zen Liu | Method and apparatus for coupling optical fiber with photodetectors |
| US20050135727A1 (en) * | 2003-12-18 | 2005-06-23 | Sioptical, Inc. | EMI-EMC shield for silicon-based optical transceiver |
| US8174041B2 (en) * | 2008-01-29 | 2012-05-08 | Nxp B.V. | Lighting unit with temperature compensation |
| US11136910B2 (en) | 2017-06-06 | 2021-10-05 | Cummins Emission Solutions Inc. | Systems and methods for mixing exhaust gases and reductant in an aftertreatment system |
| EP4069954A4 (en) | 2019-12-03 | 2023-08-09 | Cummins Emission Solutions Inc. | REDUCING AGENT DELIVERY SYSTEM FOR EXHAUST GAS AFTER-TREATMENT SYSTEM |
| WO2021173357A1 (en) | 2020-02-27 | 2021-09-02 | Cummins Emission Solutions Inc. | Mixers for use in aftertreatment systems |
| US12173632B2 (en) | 2020-10-22 | 2024-12-24 | Cummins Emission Solutions Inc. | Exhaust gas aftertreatment system |
| US12352196B2 (en) | 2021-02-02 | 2025-07-08 | Cummins Emission Solutions Inc. | Exhaust gas aftertreatment system |
| US12123337B2 (en) | 2021-03-18 | 2024-10-22 | Cummins Emission Solutions Inc. | Aftertreatment systems |
| CN117396668A (zh) | 2021-07-27 | 2024-01-12 | 康明斯排放处理公司 | 废气后处理系统 |
| CN119643152A (zh) | 2021-08-23 | 2025-03-18 | 康明斯排放处理公司 | 用于后处理系统的出口取样系统 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1139495A (en) * | 1966-08-17 | 1969-01-08 | Ass Elect Ind | Schottky barrier semi-conductor devices |
| US3452204A (en) * | 1967-03-06 | 1969-06-24 | Us Air Force | Low ohmic semiconductor tuned narrow bandpass barrier photodiode |
| US3435236A (en) * | 1967-03-21 | 1969-03-25 | Us Air Force | High ohmic semiconductor tuned narrow bandpass barrier photodiode |
| US3582656A (en) * | 1968-03-21 | 1971-06-01 | Bulova Watch Co Inc | Time base combining radioactive source and solid-state detector |
| US3598997A (en) * | 1968-07-05 | 1971-08-10 | Gen Electric | Schottky barrier atomic particle and x-ray detector |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3622844A (en) * | 1969-08-18 | 1971-11-23 | Texas Instruments Inc | Avalanche photodiode utilizing schottky-barrier configurations |
| US3615853A (en) * | 1970-01-28 | 1971-10-26 | Nasa | Solar cell panels with light-transmitting plate |
-
1971
- 1971-09-29 US US184819A patent/US3699407A/en not_active Expired - Lifetime
-
1972
- 1972-09-21 JP JP9416572A patent/JPS4843285A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329090A (en) * | 1976-08-31 | 1978-03-17 | Oki Electric Ind Co Ltd | Semiconductor photo coupler |
| JPH01182260A (ja) * | 1987-12-26 | 1989-07-20 | Yoshino Kogyosho Co Ltd | 冷凍容器用蓋体 |
| EP0528774A1 (en) * | 1991-08-08 | 1993-02-24 | FEBA S.d.f. di Boldrini Andrea e Forner Egidio | Method and device for offset varnishing |
| US6171430B1 (en) * | 1991-08-08 | 2001-01-09 | Moroel Di Marangoni Roberto & C. Sa.S. | Method and device for offset varnishing |
Also Published As
| Publication number | Publication date |
|---|---|
| US3699407A (en) | 1972-10-17 |