JPS4843285A - - Google Patents

Info

Publication number
JPS4843285A
JPS4843285A JP9416572A JP9416572A JPS4843285A JP S4843285 A JPS4843285 A JP S4843285A JP 9416572 A JP9416572 A JP 9416572A JP 9416572 A JP9416572 A JP 9416572A JP S4843285 A JPS4843285 A JP S4843285A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9416572A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4843285A publication Critical patent/JPS4843285A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/644Anisotropic liquid etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/115Orientation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/12Photocathodes-Cs coated and solar cell
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/139Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
JP9416572A 1971-09-29 1972-09-21 Pending JPS4843285A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18481971A 1971-09-29 1971-09-29

Publications (1)

Publication Number Publication Date
JPS4843285A true JPS4843285A (ja) 1973-06-22

Family

ID=22678479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9416572A Pending JPS4843285A (ja) 1971-09-29 1972-09-21

Country Status (2)

Country Link
US (1) US3699407A (ja)
JP (1) JPS4843285A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329090A (en) * 1976-08-31 1978-03-17 Oki Electric Ind Co Ltd Semiconductor photo coupler
JPH01182260A (ja) * 1987-12-26 1989-07-20 Yoshino Kogyosho Co Ltd 冷凍容器用蓋体
EP0528774A1 (en) * 1991-08-08 1993-02-24 FEBA S.d.f. di Boldrini Andrea e Forner Egidio Method and device for offset varnishing

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780357A (en) * 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
US4005312A (en) * 1973-11-08 1977-01-25 Lemelson Jerome H Electro-optical circuits and manufacturing techniques
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
JPS5642148B2 (ja) * 1975-01-24 1981-10-02
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
US4040078A (en) * 1976-05-11 1977-08-02 Bell Telephone Laboratories, Incorporated Opto-isolators and method of manufacture
US5019876A (en) * 1978-07-14 1991-05-28 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter
US4358676A (en) * 1980-09-22 1982-11-09 Optical Information Systems, Inc. High speed edge illumination photodetector
US5753928A (en) * 1993-09-30 1998-05-19 Siemens Components, Inc. Monolithic optical emitter-detector
US5448077A (en) * 1993-09-30 1995-09-05 Siemens Components Inc. Monolithic optical emitter-detector having a control amplifier with a feedback signal
US6891685B2 (en) * 2001-05-17 2005-05-10 Sioptical, Inc. Anisotropic etching of optical components
US6710376B2 (en) * 2001-09-04 2004-03-23 Eugene Robert Worley Opto-coupler based on integrated forward biased silicon diode LED
US20030075672A1 (en) * 2001-10-19 2003-04-24 Yet-Zen Liu Method and apparatus for coupling optical fiber with photodetectors
US20050135727A1 (en) * 2003-12-18 2005-06-23 Sioptical, Inc. EMI-EMC shield for silicon-based optical transceiver
US8174041B2 (en) * 2008-01-29 2012-05-08 Nxp B.V. Lighting unit with temperature compensation
US11136910B2 (en) 2017-06-06 2021-10-05 Cummins Emission Solutions Inc. Systems and methods for mixing exhaust gases and reductant in an aftertreatment system
EP4069954A4 (en) 2019-12-03 2023-08-09 Cummins Emission Solutions Inc. REDUCING AGENT DELIVERY SYSTEM FOR EXHAUST GAS AFTER-TREATMENT SYSTEM
WO2021173357A1 (en) 2020-02-27 2021-09-02 Cummins Emission Solutions Inc. Mixers for use in aftertreatment systems
US12173632B2 (en) 2020-10-22 2024-12-24 Cummins Emission Solutions Inc. Exhaust gas aftertreatment system
US12352196B2 (en) 2021-02-02 2025-07-08 Cummins Emission Solutions Inc. Exhaust gas aftertreatment system
US12123337B2 (en) 2021-03-18 2024-10-22 Cummins Emission Solutions Inc. Aftertreatment systems
CN117396668A (zh) 2021-07-27 2024-01-12 康明斯排放处理公司 废气后处理系统
CN119643152A (zh) 2021-08-23 2025-03-18 康明斯排放处理公司 用于后处理系统的出口取样系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1139495A (en) * 1966-08-17 1969-01-08 Ass Elect Ind Schottky barrier semi-conductor devices
US3452204A (en) * 1967-03-06 1969-06-24 Us Air Force Low ohmic semiconductor tuned narrow bandpass barrier photodiode
US3435236A (en) * 1967-03-21 1969-03-25 Us Air Force High ohmic semiconductor tuned narrow bandpass barrier photodiode
US3582656A (en) * 1968-03-21 1971-06-01 Bulova Watch Co Inc Time base combining radioactive source and solid-state detector
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3622844A (en) * 1969-08-18 1971-11-23 Texas Instruments Inc Avalanche photodiode utilizing schottky-barrier configurations
US3615853A (en) * 1970-01-28 1971-10-26 Nasa Solar cell panels with light-transmitting plate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329090A (en) * 1976-08-31 1978-03-17 Oki Electric Ind Co Ltd Semiconductor photo coupler
JPH01182260A (ja) * 1987-12-26 1989-07-20 Yoshino Kogyosho Co Ltd 冷凍容器用蓋体
EP0528774A1 (en) * 1991-08-08 1993-02-24 FEBA S.d.f. di Boldrini Andrea e Forner Egidio Method and device for offset varnishing
US6171430B1 (en) * 1991-08-08 2001-01-09 Moroel Di Marangoni Roberto & C. Sa.S. Method and device for offset varnishing

Also Published As

Publication number Publication date
US3699407A (en) 1972-10-17

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