JPS4959541A - - Google Patents

Info

Publication number
JPS4959541A
JPS4959541A JP48065471A JP6547173A JPS4959541A JP S4959541 A JPS4959541 A JP S4959541A JP 48065471 A JP48065471 A JP 48065471A JP 6547173 A JP6547173 A JP 6547173A JP S4959541 A JPS4959541 A JP S4959541A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48065471A
Other languages
Japanese (ja)
Other versions
JPS545937B2 (it
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959541A publication Critical patent/JPS4959541A/ja
Publication of JPS545937B2 publication Critical patent/JPS545937B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Memories (AREA)
JP6547173A 1972-06-30 1973-06-12 Expired JPS545937B2 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2232274A DE2232274C2 (de) 1972-06-30 1972-06-30 Statischer Halbleiterspeicher mit Feldeffekttransistoren

Publications (2)

Publication Number Publication Date
JPS4959541A true JPS4959541A (it) 1974-06-10
JPS545937B2 JPS545937B2 (it) 1979-03-23

Family

ID=5849362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6547173A Expired JPS545937B2 (it) 1972-06-30 1973-06-12

Country Status (5)

Country Link
JP (1) JPS545937B2 (it)
DE (1) DE2232274C2 (it)
FR (1) FR2241929B1 (it)
GB (1) GB1431205A (it)
IT (1) IT981508B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0493997U (it) * 1990-12-21 1992-08-14

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4394751A (en) * 1980-10-23 1983-07-19 Standard Microsystems Corporation Low power storage cell
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Icデバイスに対するチップ上のバラツキ検知回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0493997U (it) * 1990-12-21 1992-08-14

Also Published As

Publication number Publication date
IT981508B (it) 1974-10-10
DE2232274A1 (de) 1974-01-31
GB1431205A (en) 1976-04-07
FR2241929A1 (it) 1975-03-21
DE2232274C2 (de) 1982-05-06
JPS545937B2 (it) 1979-03-23
FR2241929B1 (it) 1976-06-18

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