JPS497992B1 - - Google Patents

Info

Publication number
JPS497992B1
JPS497992B1 JP44083914A JP8391469A JPS497992B1 JP S497992 B1 JPS497992 B1 JP S497992B1 JP 44083914 A JP44083914 A JP 44083914A JP 8391469 A JP8391469 A JP 8391469A JP S497992 B1 JPS497992 B1 JP S497992B1
Authority
JP
Japan
Prior art keywords
semi
conductor
heated
pyrolysis
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44083914A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS497992B1 publication Critical patent/JPS497992B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,273,188. Semi-conductors. SIEMENS A.G. 21 Oct., 1969 [22 Oct., 1968], No. 51522/69. Heading C1A. The formation of an epitaxial layer of a semiconductor material on a plate shaped crystalline substrate is accomplished by depositing a layer of said semi-conductor material on to a heated carbon carrier by pyrolysis of volatile compounds of the elements of said semi-conductor and using this deposited layer as a source for depositing said semi-conductor material on to the substrates by short path, sandwich epitaxial deposition using a gas transfer reaction. The carrier may be heated inductively during the pyrolysis and epitaxy steps and may also be heated by radiation during the epitaxy step The specified semi-conductor materials are A<SP>III</SP> B<SP>V</SP> compounds, gallium arsenide and phosphide, and indium arsenide. Details claimed include types of volatile compound, doping agents, and transport gas mixtures.
JP44083914A 1968-10-22 1969-10-22 Pending JPS497992B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681804462 DE1804462A1 (en) 1968-10-22 1968-10-22 Process for producing epitaxial layers of semiconducting compounds

Publications (1)

Publication Number Publication Date
JPS497992B1 true JPS497992B1 (en) 1974-02-23

Family

ID=5711173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44083914A Pending JPS497992B1 (en) 1968-10-22 1969-10-22

Country Status (9)

Country Link
JP (1) JPS497992B1 (en)
AT (1) AT323235B (en)
CA (1) CA937495A (en)
CH (1) CH499880A (en)
DE (1) DE1804462A1 (en)
FR (1) FR2021226B1 (en)
GB (1) GB1273188A (en)
NL (1) NL6913797A (en)
SE (1) SE360278B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102390A (en) * 1973-10-23 1975-08-13
WO2018100841A1 (en) 2016-12-01 2018-06-07 栗田工業株式会社 Biologically activated carbon processing device
WO2018168023A1 (en) 2017-03-16 2018-09-20 栗田工業株式会社 Aerobe treatment method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2378873A1 (en) * 1977-02-01 1978-08-25 G Pi Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support
FR2466858A1 (en) * 1979-10-05 1981-04-10 Thomson Csf PROCESS FOR THE PASSIVATION OF SEMICONDUCTOR COMPONENTS WITH GALLIUM ARSENIURE, AND ELECTRONIC COMPONENT OBTAINED THEREBY
DE102022131556A1 (en) 2022-11-29 2024-05-29 Infineon Technologies Ag METHOD OF MANUFACTURING A DEVICE SUBSTRATE, WAFER PROCESSING EQUIPMENT AND HEATING EQUIPMENT

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1348734A (en) * 1962-02-02 1964-01-10 Siemens Ag Semiconductor Device Manufacturing Development
DE1176102B (en) * 1962-09-25 1964-08-20 Siemens Ag Process for the crucible-free production of gallium arsenide rods from gallium alkyls and arsenic compounds at low temperatures
FR1485970A (en) * 1965-07-05 1967-06-23 Siemens Ag Method for manufacturing epitaxially grown layers in binary semiconductor compounds

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102390A (en) * 1973-10-23 1975-08-13
WO2018100841A1 (en) 2016-12-01 2018-06-07 栗田工業株式会社 Biologically activated carbon processing device
WO2018168023A1 (en) 2017-03-16 2018-09-20 栗田工業株式会社 Aerobe treatment method

Also Published As

Publication number Publication date
CH499880A (en) 1970-11-30
NL6913797A (en) 1970-04-24
GB1273188A (en) 1972-05-03
SE360278B (en) 1973-09-24
FR2021226A1 (en) 1970-07-17
DE1804462A1 (en) 1970-05-27
AT323235B (en) 1975-06-25
CA937495A (en) 1973-11-27
FR2021226B1 (en) 1974-10-11

Similar Documents

Publication Publication Date Title
US3664866A (en) Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
GB1283793A (en) Depositing successive epitaxial semiconductive layers from the liquid phase
GB916888A (en) Improvements in and relating to the epitaxial deposition of semi-conductor material
GB1378327A (en) Iii-v compound on insulating substrate
GB719873A (en) Improvements in or relating to electric semi-conductor devices and processes for their production
GB1320773A (en) Method for forming epitaxial crystals or wafers in selected regions of substraes
NL168892B (en) PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A TYPE III (A) - V (A) COMPOUND OF THE PERIODIC SYSTEM OF THE ELEMENTS AND SEMICONDUCTOR DEVICE, USING THIS PROCESS, UNDER REDUCED PRESSURE.
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
GB1282167A (en) Process for vapour growing thin films
GB1148409A (en) Improvements in and relating to semiconductor devices
JPS497992B1 (en)
GB1465830A (en) Reducing boundary charges in semiconductor layers grown on a substrate
GB1441537A (en) Methods of forming a semiconductor device
GB942517A (en) A process for the production of a thin layer of a semiconducting compound
GB1328170A (en) Epitaxial deposition
GB1457962A (en) Method of epitaxially depositing a semi-conductor material on a substrate
GB1432877A (en) Substrates of compound semiconductors
GB1342542A (en) Epitaxial deposition
GB1194017A (en) Improvements in and relating to Methods of Manufacturing Semiconductor Devices
US3179541A (en) Vapor growth with smooth surfaces by introducing cadmium into the semiconductor material
GB1282635A (en) Improvements in or relating to semiconductor devices made of gallium arsenide
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB1467145A (en) Method of forming a wafer of semiconductor material and the wafer so formed
GB1425102A (en) Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon
GB1037146A (en) Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type