JPS50134200A - - Google Patents
Info
- Publication number
- JPS50134200A JPS50134200A JP49042612A JP4261274A JPS50134200A JP S50134200 A JPS50134200 A JP S50134200A JP 49042612 A JP49042612 A JP 49042612A JP 4261274 A JP4261274 A JP 4261274A JP S50134200 A JPS50134200 A JP S50134200A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49042612A JPS50134200A (ja) | 1974-04-15 | 1974-04-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49042612A JPS50134200A (ja) | 1974-04-15 | 1974-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50134200A true JPS50134200A (ja) | 1975-10-24 |
Family
ID=12640839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49042612A Pending JPS50134200A (ja) | 1974-04-15 | 1974-04-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS50134200A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990007591A1 (fr) * | 1988-12-23 | 1990-07-12 | Kabushiki Kaisha Komatsu Seisakusho | Procede de preparation d'un mince film en oxyde supraconducteur et base utilisee dans la preparation |
| WO1991005087A1 (fr) * | 1989-09-26 | 1991-04-18 | Kabushiki Kaisha Komatsu Seisakusho | Substrat d'oxyde monocristal, dispositif supraconducteur produit a partir d'un tel substrat et procede de production associe |
-
1974
- 1974-04-15 JP JP49042612A patent/JPS50134200A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990007591A1 (fr) * | 1988-12-23 | 1990-07-12 | Kabushiki Kaisha Komatsu Seisakusho | Procede de preparation d'un mince film en oxyde supraconducteur et base utilisee dans la preparation |
| US5413986A (en) * | 1988-12-23 | 1995-05-09 | Kabushiki Kaisha Komatsu Seisakusho | Method for production of thin oxide superconducting film and substrate for production of the film |
| WO1991005087A1 (fr) * | 1989-09-26 | 1991-04-18 | Kabushiki Kaisha Komatsu Seisakusho | Substrat d'oxyde monocristal, dispositif supraconducteur produit a partir d'un tel substrat et procede de production associe |
| US5240902A (en) * | 1989-09-26 | 1993-08-31 | Kabushiki Kaisha Komatsu Seisakusho | Substrate of single crystal of oxide, superconductive device using said substrate and method of producing said superconductive device |
| US5314871A (en) * | 1989-09-26 | 1994-05-24 | Kabushiki Kaisha Komatsu Seisakusho | Substrate of single crystal of oxide, device using said substrate and method of producing said superconductive device |