JPS50151090A - - Google Patents
Info
- Publication number
- JPS50151090A JPS50151090A JP49058587A JP5858774A JPS50151090A JP S50151090 A JPS50151090 A JP S50151090A JP 49058587 A JP49058587 A JP 49058587A JP 5858774 A JP5858774 A JP 5858774A JP S50151090 A JPS50151090 A JP S50151090A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49058587A JPS50151090A (ja) | 1974-05-23 | 1974-05-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49058587A JPS50151090A (ja) | 1974-05-23 | 1974-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50151090A true JPS50151090A (ja) | 1975-12-04 |
Family
ID=13088593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49058587A Pending JPS50151090A (ja) | 1974-05-23 | 1974-05-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS50151090A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850783A (ja) * | 1981-09-21 | 1983-03-25 | Mitsubishi Electric Corp | 受光素子 |
| JPS63300559A (ja) * | 1987-05-29 | 1988-12-07 | Nec Corp | 配列型赤外線検知器 |
| JPH02185063A (ja) * | 1989-01-12 | 1990-07-19 | Seiko Instr Inc | イメージセンサー |
| JP2014045198A (ja) * | 2006-04-25 | 2014-03-13 | Koninklijke Philips Nv | （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法 |
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1974
- 1974-05-23 JP JP49058587A patent/JPS50151090A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850783A (ja) * | 1981-09-21 | 1983-03-25 | Mitsubishi Electric Corp | 受光素子 |
| JPS63300559A (ja) * | 1987-05-29 | 1988-12-07 | Nec Corp | 配列型赤外線検知器 |
| JPH02185063A (ja) * | 1989-01-12 | 1990-07-19 | Seiko Instr Inc | イメージセンサー |
| JP2014045198A (ja) * | 2006-04-25 | 2014-03-13 | Koninklijke Philips Nv | （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法 |