JPS5043849A - - Google Patents

Info

Publication number
JPS5043849A
JPS5043849A JP49083144A JP8314474A JPS5043849A JP S5043849 A JPS5043849 A JP S5043849A JP 49083144 A JP49083144 A JP 49083144A JP 8314474 A JP8314474 A JP 8314474A JP S5043849 A JPS5043849 A JP S5043849A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49083144A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5043849A publication Critical patent/JPS5043849A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
JP49083144A 1973-07-19 1974-07-19 Pending JPS5043849A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732336821 DE2336821A1 (de) 1973-07-19 1973-07-19 Transistoranordnung

Publications (1)

Publication Number Publication Date
JPS5043849A true JPS5043849A (fr) 1975-04-19

Family

ID=5887458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49083144A Pending JPS5043849A (fr) 1973-07-19 1974-07-19

Country Status (8)

Country Link
JP (1) JPS5043849A (fr)
BE (1) BE817847A (fr)
DE (1) DE2336821A1 (fr)
FR (1) FR2258003B3 (fr)
GB (1) GB1448303A (fr)
IT (1) IT1017250B (fr)
LU (1) LU70553A1 (fr)
NL (1) NL7409397A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435752A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Schaltung zur zwischenspeicherung digitaler signale
GB2403848A (en) * 2003-07-08 2005-01-12 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
DE2336821A1 (de) 1975-02-06
GB1448303A (en) 1976-09-02
FR2258003A1 (fr) 1975-08-08
FR2258003B3 (fr) 1977-05-06
BE817847A (fr) 1974-11-18
LU70553A1 (fr) 1974-11-28
NL7409397A (nl) 1975-01-21
IT1017250B (it) 1977-07-20

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