JPS5097587A - - Google Patents

Info

Publication number
JPS5097587A
JPS5097587A JP49107081A JP10708174A JPS5097587A JP S5097587 A JPS5097587 A JP S5097587A JP 49107081 A JP49107081 A JP 49107081A JP 10708174 A JP10708174 A JP 10708174A JP S5097587 A JPS5097587 A JP S5097587A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49107081A
Other languages
Japanese (ja)
Other versions
JPS5854115B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5097587A publication Critical patent/JPS5097587A/ja
Publication of JPS5854115B2 publication Critical patent/JPS5854115B2/en
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0056—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces
    • F28D2021/0057—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces for melting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Manufacture And Refinement Of Metals (AREA)
JP49107081A 1973-12-28 1974-09-17 How to use tankets Expired JPS5854115B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US429142A US3898051A (en) 1973-12-28 1973-12-28 Crystal growing

Publications (2)

Publication Number Publication Date
JPS5097587A true JPS5097587A (en) 1975-08-02
JPS5854115B2 JPS5854115B2 (en) 1983-12-02

Family

ID=23701973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49107081A Expired JPS5854115B2 (en) 1973-12-28 1974-09-17 How to use tankets

Country Status (7)

Country Link
US (1) US3898051A (en)
JP (1) JPS5854115B2 (en)
CA (1) CA1038268A (en)
CH (1) CH595881A5 (en)
DE (1) DE2461553C2 (en)
FR (1) FR2255950B1 (en)
GB (1) GB1463180A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505935A (en) * 2005-08-25 2009-02-12 クリスタル・システムズ，インコーポレーテッド Apparatus and method for crystal growth
JP2013503810A (en) * 2009-09-05 2013-02-04 クリステク カンパニー リミテッド Sapphire single crystal growth method and apparatus
WO2014156986A1 (en) * 2013-03-25 2014-10-02 国立大学法人九州大学 Silicon single crystal production apparatus, and silicon single crystal production method
JP2015129089A (en) * 2009-09-02 2015-07-16 ジーティー クリスタル システムズ エルエルシー High-temperature process improvement using helium under regulated pressure

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US4218418A (en) * 1978-06-22 1980-08-19 Crystal Systems, Inc. Processes of casting an ingot and making a silica container
US4251206A (en) * 1979-05-14 1981-02-17 Rca Corporation Apparatus for and method of supporting a crucible for EFG growth of sapphire
US4264406A (en) * 1979-06-11 1981-04-28 The United States Of America As Represented By The Secretary Of The Army Method for growing crystals
FR2512846A1 (en) * 1981-09-16 1983-03-18 Labo Electronique Physique Crystalline growth of semiconductor crystals - giving reduced density of dislocations
JPS6041033B2 (en) * 1982-06-24 1985-09-13 財団法人 半導体研究振興会 crystal growth equipment
US4540550A (en) * 1982-10-29 1985-09-10 Westinghouse Electric Corp. Apparatus for growing crystals
DE3323896A1 (en) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Process and apparatus for the directed solidification of melts
US4892707A (en) * 1983-07-25 1990-01-09 American Cyanamid Company Apparatus for the calorimetry of chemical processes
US4963499A (en) * 1983-07-25 1990-10-16 American Cyanamid Company Method for the calorimetry of chemical processes
FR2553232B1 (en) * 1983-10-05 1985-12-27 Comp Generale Electricite METHOD AND DEVICE FOR FORMING A LINGOT OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL
JPS6163593A (en) * 1984-09-05 1986-04-01 Toshiba Corp Installation for production of single crystal of compound semiconductor
DE3644746A1 (en) * 1986-12-30 1988-07-14 Hagen Hans Dr Ing Process and apparatus for growing crystals
FR2614404B1 (en) * 1987-04-23 1989-06-09 Snecma CASTING OVEN FOR PARTS WITH ORIENTED STRUCTURE, WITH MOVABLE THERMAL SCREEN
US4840699A (en) * 1987-06-12 1989-06-20 Ghemini Technologies Gallium arsenide crystal growth
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
WO1990003952A1 (en) * 1988-10-07 1990-04-19 Crystal Systems, Inc. Method of growing silicon ingots using a rotating melt
US4946544A (en) * 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5047113A (en) * 1989-08-23 1991-09-10 Aleksandar Ostrogorsky Method for directional solidification of single crystals
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
DE69230962T2 (en) * 1991-08-22 2000-10-05 Raytheon Co., Lexington Crystal growth process for the production of large-area GaAs and infrared windows / domes made with them
US5410567A (en) * 1992-03-05 1995-04-25 Corning Incorporated Optical fiber draw furnace
US5653954A (en) * 1995-06-07 1997-08-05 Thermometrics, Inc. Nickel-manganese oxide single crystals
US5830268A (en) * 1995-06-07 1998-11-03 Thermometrics, Inc. Methods of growing nickel-manganese oxide single crystals
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
JP3242292B2 (en) * 1995-06-15 2001-12-25 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor
JP3388664B2 (en) * 1995-12-28 2003-03-24 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor
JP3520957B2 (en) * 1997-06-23 2004-04-19 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor ingot
JP3523986B2 (en) * 1997-07-02 2004-04-26 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor
DE29715846U1 (en) * 1997-09-04 1997-12-11 ALD Vacuum Technologies GmbH, 63526 Erlensee Device for the directional solidification of melts
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
KR20020096097A (en) * 2001-06-16 2002-12-31 주식회사 실트론 A Growing Apparatus of a single crystal ingot
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4658453B2 (en) * 2002-11-14 2011-03-23 ヘムロック・セミコンダクター・コーポレーション Flowable chip, method for producing and using the same, and apparatus used for carrying out the method
JP4151474B2 (en) * 2003-05-13 2008-09-17 信越半導体株式会社 Method for producing single crystal and single crystal
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
JP5198731B2 (en) * 2004-01-29 2013-05-15 京セラ株式会社 Silicon ingot manufacturing mold, method for forming the same, and method for manufacturing a polycrystalline silicon substrate using the mold
IL162518A0 (en) * 2004-06-14 2005-11-20 Rafael Armament Dev Authority Dome
DE602005027597D1 (en) * 2004-11-16 2011-06-01 Nippon Telegraph & Telephone DEVICE FOR PREPARING CRYSTAL
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
KR101400075B1 (en) 2006-01-20 2014-05-28 에이엠지 아이디얼캐스트 솔라 코포레이션 Method and apparatus for fabricating geometric polycrystalline cast silicon and geometric polycrystalline cast silicon bodies for photoelectric conversion device
RU2350699C2 (en) * 2006-12-11 2009-03-27 Открытое акционерное общество "Концерн Энергомера" Method for growing of sapphire single crystals from melt
FR2918675B1 (en) * 2007-07-10 2009-08-28 Commissariat Energie Atomique DEVICE FOR MANUFACTURING BLOCK OF CRYSTALLINE MATERIAL WITH MODULATION OF THERMAL CONDUCTIVITY.
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
JP2010534189A (en) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド Method and apparatus for producing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
DE102007038851A1 (en) * 2007-08-16 2009-02-19 Schott Ag Process for the preparation of monocrystalline metal or semimetal bodies
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof
US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
US8329133B2 (en) * 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
TWI519685B (en) * 2009-07-22 2016-02-01 國立大學法人信州大學 Method for producing sapphire single crystal and manufacturing device for sapphire single crystal
US8647433B2 (en) * 2009-12-13 2014-02-11 Axt, Inc. Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same
DE102010014724B4 (en) 2010-04-01 2012-12-06 Deutsche Solar Gmbh Apparatus and method for producing silicon blocks
DE102011006076B4 (en) 2010-04-01 2016-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus and method for producing silicon blocks
US20110315808A1 (en) 2010-06-23 2011-12-29 Zelinski Brian J Solid solution-based nanocomposite optical ceramic materials
US8445822B2 (en) 2010-06-23 2013-05-21 Raytheon Company One-piece Nano/Nano class Nanocomposite Optical Ceramic (NNOC) extended dome having seamless non-complementary geometries for electro-optic sensors
WO2012073876A1 (en) * 2010-11-29 2012-06-07 株式会社アルバック Silicon refining device and silicon refining method
US9709699B2 (en) 2012-02-03 2017-07-18 Raytheon Company Nano-nano-composite optical ceramic lenses
US9012823B2 (en) 2012-07-31 2015-04-21 Raytheon Company Vehicle having a nanocomposite optical ceramic dome
CN103205799A (en) * 2013-04-23 2013-07-17 广东赛翡蓝宝石科技有限公司 Method for growing C-oriented white stone crystals
US9845548B2 (en) * 2013-09-30 2017-12-19 Gtat Corporation Advanced crucible support and thermal distribution management
US10633759B2 (en) 2013-09-30 2020-04-28 Gtat Corporation Technique for controlling temperature uniformity in crystal growth apparatus
WO2015047819A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc Method and apparatus for processing sapphire
CN104195640A (en) * 2014-08-28 2014-12-10 杭州铸泰科技有限公司 Thermal field system for sapphire single crystal growth
CN104250852B (en) * 2014-09-17 2016-09-14 哈尔滨化兴软控科技有限公司 Sapphire crystal growth device and growth method
WO2017146139A1 (en) * 2016-02-26 2017-08-31 株式会社アライドマテリアル Molybdenum crucible
CN206562482U (en) * 2017-01-13 2017-10-17 许昌天戈硅业科技有限公司 A kind of classification closed-loop control cooling device of sapphire crystallization furnace
DE102020120715A1 (en) 2020-08-05 2022-02-10 Forschungsverbund Berlin E.V. Method and apparatus for growing a rare earth sesquioxide crystal
AT524601B1 (en) * 2020-12-29 2023-04-15 Fametec Gmbh Device for growing an artificially produced single crystal, in particular a sapphire single crystal
CN114737253B (en) * 2022-06-10 2022-11-04 太原彩源新材料科技有限公司 Single crystal furnace thermal field structure and method for growing large size sapphire single crystal plate

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US3335084A (en) * 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
BE684801A (en) * 1965-08-05 1967-01-03
US3464812A (en) * 1966-03-29 1969-09-02 Massachusetts Inst Technology Process for making solids and products thereof
DE1936443C3 (en) * 1969-07-17 1975-03-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for growing homogeneously doped, plane-parallel epitaxial layers from semiconducting compounds by melt epitaxy
US3653432A (en) * 1970-09-01 1972-04-04 Us Army Apparatus and method for unidirectionally solidifying high temperature material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505935A (en) * 2005-08-25 2009-02-12 クリスタル・システムズ，インコーポレーテッド Apparatus and method for crystal growth
JP2015129089A (en) * 2009-09-02 2015-07-16 ジーティー クリスタル システムズ エルエルシー High-temperature process improvement using helium under regulated pressure
JP2017100945A (en) * 2009-09-02 2017-06-08 ジーティーエイティー コーポレイション Improvement of high temperature process using helium under controlled pressure
JP2013503810A (en) * 2009-09-05 2013-02-04 クリステク カンパニー リミテッド Sapphire single crystal growth method and apparatus
WO2014156986A1 (en) * 2013-03-25 2014-10-02 国立大学法人九州大学 Silicon single crystal production apparatus, and silicon single crystal production method

Also Published As

Publication number Publication date
US3898051A (en) 1975-08-05
JPS5854115B2 (en) 1983-12-02
CH595881A5 (en) 1978-02-28
FR2255950A1 (en) 1975-07-25
FR2255950B1 (en) 1980-12-26
DE2461553A1 (en) 1975-07-10
CA1038268A (en) 1978-09-12
GB1463180A (en) 1977-02-02
DE2461553C2 (en) 1986-04-24

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