JPS51111087A - Mutual compeusating mis semiconductor integrated circuit - Google Patents
Mutual compeusating mis semiconductor integrated circuitInfo
- Publication number
- JPS51111087A JPS51111087A JP50035596A JP3559675A JPS51111087A JP S51111087 A JPS51111087 A JP S51111087A JP 50035596 A JP50035596 A JP 50035596A JP 3559675 A JP3559675 A JP 3559675A JP S51111087 A JPS51111087 A JP S51111087A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- compeusating
- mutual
- mis semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 210000000707 wrist Anatomy 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:A compact mutual compensating MIS semiconductor integrated circuit with diodes for the switching functions in the booster circuit for the power of the display circuit for electrnic wrist watches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035596A JPS51111087A (en) | 1975-03-26 | 1975-03-26 | Mutual compeusating mis semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50035596A JPS51111087A (en) | 1975-03-26 | 1975-03-26 | Mutual compeusating mis semiconductor integrated circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57222058A Division JPS58116762A (en) | 1982-12-20 | 1982-12-20 | Complementary MIS semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51111087A true JPS51111087A (en) | 1976-10-01 |
| JPS5728956B2 JPS5728956B2 (en) | 1982-06-19 |
Family
ID=12446173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50035596A Granted JPS51111087A (en) | 1975-03-26 | 1975-03-26 | Mutual compeusating mis semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51111087A (en) |
-
1975
- 1975-03-26 JP JP50035596A patent/JPS51111087A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5728956B2 (en) | 1982-06-19 |
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