JPS51113476A - Semiconductor device manufacturing system - Google Patents

Semiconductor device manufacturing system

Info

Publication number
JPS51113476A
JPS51113476A JP50037810A JP3781075A JPS51113476A JP S51113476 A JPS51113476 A JP S51113476A JP 50037810 A JP50037810 A JP 50037810A JP 3781075 A JP3781075 A JP 3781075A JP S51113476 A JPS51113476 A JP S51113476A
Authority
JP
Japan
Prior art keywords
manufacturing system
semiconductor device
device manufacturing
mos manufacturing
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50037810A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Hiroshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50037810A priority Critical patent/JPS51113476A/en
Publication of JPS51113476A publication Critical patent/JPS51113476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE:This C-MOS manufacturing system can improve integrate degree by diminishing formation range of channel stopper in C-MOS manufacturing system.
JP50037810A 1975-03-31 1975-03-31 Semiconductor device manufacturing system Pending JPS51113476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50037810A JPS51113476A (en) 1975-03-31 1975-03-31 Semiconductor device manufacturing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50037810A JPS51113476A (en) 1975-03-31 1975-03-31 Semiconductor device manufacturing system

Publications (1)

Publication Number Publication Date
JPS51113476A true JPS51113476A (en) 1976-10-06

Family

ID=12507858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50037810A Pending JPS51113476A (en) 1975-03-31 1975-03-31 Semiconductor device manufacturing system

Country Status (1)

Country Link
JP (1) JPS51113476A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
JPS5863147A (en) * 1981-10-09 1983-04-14 Toshiba Corp Semiconductor device
JPH01230247A (en) * 1989-01-13 1989-09-13 Seiko Epson Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846275A (en) * 1971-10-07 1973-07-02
JPS4857587A (en) * 1971-11-18 1973-08-13

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846275A (en) * 1971-10-07 1973-07-02
JPS4857587A (en) * 1971-11-18 1973-08-13

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
JPS5863147A (en) * 1981-10-09 1983-04-14 Toshiba Corp Semiconductor device
JPH01230247A (en) * 1989-01-13 1989-09-13 Seiko Epson Corp Manufacture of semiconductor device

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