JPS51113545A - Memory - Google Patents

Memory

Info

Publication number
JPS51113545A
JPS51113545A JP50037985A JP3798575A JPS51113545A JP S51113545 A JPS51113545 A JP S51113545A JP 50037985 A JP50037985 A JP 50037985A JP 3798575 A JP3798575 A JP 3798575A JP S51113545 A JPS51113545 A JP S51113545A
Authority
JP
Japan
Prior art keywords
memory
high speed
sense amplifier
detects input
speed sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50037985A
Other languages
Japanese (ja)
Other versions
JPS568437B2 (en
Inventor
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50037985A priority Critical patent/JPS51113545A/en
Priority to US05/672,154 priority patent/US4085457A/en
Publication of JPS51113545A publication Critical patent/JPS51113545A/en
Publication of JPS568437B2 publication Critical patent/JPS568437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

PURPOSE: High speed sense amplifier which detects input differentially.
COPYRIGHT: (C)1976,JPO&Japio
JP50037985A 1975-03-31 1975-03-31 Memory Granted JPS51113545A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50037985A JPS51113545A (en) 1975-03-31 1975-03-31 Memory
US05/672,154 US4085457A (en) 1975-03-31 1976-03-31 Memory system with a sense circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50037985A JPS51113545A (en) 1975-03-31 1975-03-31 Memory

Publications (2)

Publication Number Publication Date
JPS51113545A true JPS51113545A (en) 1976-10-06
JPS568437B2 JPS568437B2 (en) 1981-02-24

Family

ID=12512853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50037985A Granted JPS51113545A (en) 1975-03-31 1975-03-31 Memory

Country Status (2)

Country Link
US (1) US4085457A (en)
JP (1) JPS51113545A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2812657A1 (en) * 1977-03-25 1978-09-28 Hitachi Ltd STORAGE SYSTEM
JPS59229790A (en) * 1984-05-07 1984-12-24 Hitachi Ltd Semiconductor memory
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
JPS61142592A (en) * 1984-12-13 1986-06-30 Toshiba Corp Semiconductor storage device
JPS62157398A (en) * 1985-12-28 1987-07-13 Toshiba Corp Semiconductor memory device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472641A (en) * 1977-11-21 1979-06-11 Toshiba Corp Voltage detection circuit
US4162540A (en) * 1978-03-20 1979-07-24 Fujitsu Limited Clocked memory with delay establisher by drive transistor design
JPS5817998B2 (en) * 1978-10-26 1983-04-11 富士通株式会社 semiconductor memory
US4274013A (en) * 1979-02-09 1981-06-16 Bell Telephone Laboratories, Incorporated Sense amplifier
JPS5683891A (en) * 1979-12-13 1981-07-08 Fujitsu Ltd Semiconductor storage device
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
US4764901A (en) * 1984-08-03 1988-08-16 Kabushiki Kaisha Toshiba Semiconductor memory device capable of being accessed before completion of data output
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory
EP0344752B1 (en) * 1988-06-01 1993-03-10 Nec Corporation Semiconductor memory device with high speed sensing facility
JP2611504B2 (en) * 1990-06-15 1997-05-21 日本電気株式会社 Semiconductor memory
JP2939027B2 (en) * 1991-10-31 1999-08-25 三菱電機株式会社 Semiconductor storage device
US5973957A (en) * 1997-09-16 1999-10-26 Intel Corporation Sense amplifier comprising a preamplifier and a differential input latch for flash memories
US6563753B1 (en) * 2001-11-16 2003-05-13 Agilent Technologies, Inc. Sense amplifier with independent write-back capability for ferroelectric random-access memories

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3714638A (en) * 1972-03-24 1973-01-30 Rca Corp Circuit for improving operation of semiconductor memory
US4003035A (en) * 1975-07-03 1977-01-11 Motorola, Inc. Complementary field effect transistor sense amplifier for one transistor per bit ram cell

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2812657A1 (en) * 1977-03-25 1978-09-28 Hitachi Ltd STORAGE SYSTEM
JPS53134337A (en) * 1977-03-25 1978-11-22 Hitachi Ltd Sense circuit
JPS59229790A (en) * 1984-05-07 1984-12-24 Hitachi Ltd Semiconductor memory
JPS61117792A (en) * 1984-08-02 1986-06-05 テキサス　インスツルメンツ　インコ−ポレイテツド Cmos sensing amplifier with limited instantaneous power
JPS61142592A (en) * 1984-12-13 1986-06-30 Toshiba Corp Semiconductor storage device
JPS62157398A (en) * 1985-12-28 1987-07-13 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
US4085457A (en) 1978-04-18
JPS568437B2 (en) 1981-02-24

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