JPS51116683A - Semiconductor control unit - Google Patents

Semiconductor control unit

Info

Publication number
JPS51116683A
JPS51116683A JP50041577A JP4157775A JPS51116683A JP S51116683 A JPS51116683 A JP S51116683A JP 50041577 A JP50041577 A JP 50041577A JP 4157775 A JP4157775 A JP 4157775A JP S51116683 A JPS51116683 A JP S51116683A
Authority
JP
Japan
Prior art keywords
control unit
semiconductor control
turn
thyrister
lowering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50041577A
Other languages
Japanese (ja)
Other versions
JPS586312B2 (en
Inventor
Akira Kawakami
Hiroshi Gamo
Yahei Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50041577A priority Critical patent/JPS586312B2/en
Publication of JPS51116683A publication Critical patent/JPS51116683A/en
Publication of JPS586312B2 publication Critical patent/JPS586312B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To improve turn-on switching efficiency by lowering the concentration degree of a thyrister's initial turn-on current.
JP50041577A 1975-04-04 1975-04-04 handmade seaweed Expired JPS586312B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50041577A JPS586312B2 (en) 1975-04-04 1975-04-04 handmade seaweed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50041577A JPS586312B2 (en) 1975-04-04 1975-04-04 handmade seaweed

Publications (2)

Publication Number Publication Date
JPS51116683A true JPS51116683A (en) 1976-10-14
JPS586312B2 JPS586312B2 (en) 1983-02-03

Family

ID=12612285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041577A Expired JPS586312B2 (en) 1975-04-04 1975-04-04 handmade seaweed

Country Status (1)

Country Link
JP (1) JPS586312B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713762A (en) * 1980-06-28 1982-01-23 Toshiba Corp Light energized semiconductor device
JPS58147066A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Gate turn off thyristor
JPS6063964A (en) * 1984-07-28 1985-04-12 Mitsubishi Electric Corp Thyristor
JPS6063965A (en) * 1984-07-28 1985-04-12 Mitsubishi Electric Corp Thyristor
JPH02276278A (en) * 1989-04-18 1990-11-13 Hitachi Ltd self-protected thyristor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830885A (en) * 1971-08-19 1973-04-23
JPS4847779A (en) * 1971-10-19 1973-07-06
JPS4967582A (en) * 1972-08-25 1974-07-01

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830885A (en) * 1971-08-19 1973-04-23
JPS4847779A (en) * 1971-10-19 1973-07-06
JPS4967582A (en) * 1972-08-25 1974-07-01

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713762A (en) * 1980-06-28 1982-01-23 Toshiba Corp Light energized semiconductor device
JPS58147066A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Gate turn off thyristor
JPS6063964A (en) * 1984-07-28 1985-04-12 Mitsubishi Electric Corp Thyristor
JPS6063965A (en) * 1984-07-28 1985-04-12 Mitsubishi Electric Corp Thyristor
JPH02276278A (en) * 1989-04-18 1990-11-13 Hitachi Ltd self-protected thyristor

Also Published As

Publication number Publication date
JPS586312B2 (en) 1983-02-03

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