JPS51117562A - Transistor circuit - Google Patents

Transistor circuit

Info

Publication number
JPS51117562A
JPS51117562A JP4218075A JP4218075A JPS51117562A JP S51117562 A JPS51117562 A JP S51117562A JP 4218075 A JP4218075 A JP 4218075A JP 4218075 A JP4218075 A JP 4218075A JP S51117562 A JPS51117562 A JP S51117562A
Authority
JP
Japan
Prior art keywords
transistor circuit
mosfet
tri
employing
drives
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4218075A
Other languages
Japanese (ja)
Inventor
Fumitaka Asami
Tatsusuke Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4218075A priority Critical patent/JPS51117562A/en
Publication of JPS51117562A publication Critical patent/JPS51117562A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425Multistate logic
    • H03K19/09429Multistate logic one of the states being the high impedance or floating state

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To lessen energy consumption during the quiescent condition (the high output impedance) by employing the enhance type for a MOSFET which drives a final step amplifier circuit of a tri-state buffer circuit.
JP4218075A 1975-04-09 1975-04-09 Transistor circuit Pending JPS51117562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4218075A JPS51117562A (en) 1975-04-09 1975-04-09 Transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4218075A JPS51117562A (en) 1975-04-09 1975-04-09 Transistor circuit

Publications (1)

Publication Number Publication Date
JPS51117562A true JPS51117562A (en) 1976-10-15

Family

ID=12628778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4218075A Pending JPS51117562A (en) 1975-04-09 1975-04-09 Transistor circuit

Country Status (1)

Country Link
JP (1) JPS51117562A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6264123A (en) * 1986-09-12 1987-03-23 Nec Corp Semiconductor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6264123A (en) * 1986-09-12 1987-03-23 Nec Corp Semiconductor circuit

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