JPS51121266A - Method of removing projected portion of epitaxial layer - Google Patents

Method of removing projected portion of epitaxial layer

Info

Publication number
JPS51121266A
JPS51121266A JP51033693A JP3369376A JPS51121266A JP S51121266 A JPS51121266 A JP S51121266A JP 51033693 A JP51033693 A JP 51033693A JP 3369376 A JP3369376 A JP 3369376A JP S51121266 A JPS51121266 A JP S51121266A
Authority
JP
Japan
Prior art keywords
epitaxial layer
projected portion
removing projected
epitaxial
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51033693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5533176B2 (2
Inventor
Chiyaaruzu Iidoman Uiriamu
Emaniyueru Katsutsu Ruisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS51121266A publication Critical patent/JPS51121266A/ja
Publication of JPS5533176B2 publication Critical patent/JPS5533176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H10P95/066—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP51033693A 1975-03-31 1976-03-29 Method of removing projected portion of epitaxial layer Granted JPS51121266A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/563,722 US3990925A (en) 1975-03-31 1975-03-31 Removal of projections on epitaxial layers

Publications (2)

Publication Number Publication Date
JPS51121266A true JPS51121266A (en) 1976-10-23
JPS5533176B2 JPS5533176B2 (2) 1980-08-29

Family

ID=24251640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51033693A Granted JPS51121266A (en) 1975-03-31 1976-03-29 Method of removing projected portion of epitaxial layer

Country Status (7)

Country Link
US (1) US3990925A (2)
JP (1) JPS51121266A (2)
CA (1) CA1042115A (2)
DE (1) DE2613490C3 (2)
FR (1) FR2306529A1 (2)
GB (1) GB1537306A (2)
IT (1) IT1058695B (2)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527686A (en) * 1978-08-21 1980-02-27 Sony Corp Projection eliminating device
JPS5612723A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Manufacture of semiconductor device
JPS56114315A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Manufacture of semiconductor device
JPS57115824A (en) * 1981-01-10 1982-07-19 Nec Home Electronics Ltd Removing epitaxial layer mound
JPS62128516A (ja) * 1985-11-29 1987-06-10 Shin Etsu Handotai Co Ltd 半導体ウエ−ハの突起物除去方法
JP2011096935A (ja) * 2009-10-30 2011-05-12 Fujifilm Corp エピタキシャルウエハ、エピタキシャルウエハの製造方法、発光素子ウエハ、発光素子ウエハの製造方法、及び発光素子
JP2019090956A (ja) * 2017-11-16 2019-06-13 旭化成エレクトロニクス株式会社 光学素子の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate
DE3524765A1 (de) * 1985-07-11 1987-01-22 Licentia Gmbh Verfahren zum herstellen einer durchsichtphotokathode
DE3721940A1 (de) * 1987-07-02 1989-01-12 Ibm Deutschland Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss
JP3060714B2 (ja) * 1992-04-15 2000-07-10 日本電気株式会社 半導体集積回路の製造方法
FR2994615A1 (fr) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Procede de planarisation d'une couche epitaxiee
KR102646643B1 (ko) 2017-09-14 2024-03-12 신에쓰 가가꾸 고교 가부시끼가이샤 수중유형 유화 조성물의 제조 방법 및 화장료

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1652225A1 (de) * 1967-08-21 1971-04-22 Halbleiterwerk Frankfurt Oder Verfahren zum Abtragen und Polieren von Halbleiterkoerpern,insbesondere Silizium-Einkristallscheiben
US3656671A (en) * 1970-03-16 1972-04-18 Ibm Frangible projection removal
US3699644A (en) * 1971-01-04 1972-10-24 Sylvania Electric Prod Method of dividing wafers
US3783044A (en) * 1971-04-09 1974-01-01 Motorola Inc Photoresist keys and depth indicator
US3718514A (en) * 1971-05-28 1973-02-27 Bell Telephone Labor Inc Removal of projections on epitaxial layers
BE789090A (fr) * 1971-09-22 1973-01-15 Western Electric Co Procede et solution d'attaque de semi-conducteurs
US3838501A (en) * 1973-02-09 1974-10-01 Honeywell Inf Systems Method in microcircuit package assembly providing nonabrasive, electrically passive edges on integrated circuit chips

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527686A (en) * 1978-08-21 1980-02-27 Sony Corp Projection eliminating device
JPS5612723A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Manufacture of semiconductor device
JPS56114315A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Manufacture of semiconductor device
JPS57115824A (en) * 1981-01-10 1982-07-19 Nec Home Electronics Ltd Removing epitaxial layer mound
JPS62128516A (ja) * 1985-11-29 1987-06-10 Shin Etsu Handotai Co Ltd 半導体ウエ−ハの突起物除去方法
JP2011096935A (ja) * 2009-10-30 2011-05-12 Fujifilm Corp エピタキシャルウエハ、エピタキシャルウエハの製造方法、発光素子ウエハ、発光素子ウエハの製造方法、及び発光素子
JP2019090956A (ja) * 2017-11-16 2019-06-13 旭化成エレクトロニクス株式会社 光学素子の製造方法

Also Published As

Publication number Publication date
GB1537306A (en) 1978-12-29
CA1042115A (en) 1978-11-07
FR2306529B1 (2) 1978-05-19
IT1058695B (it) 1982-05-10
DE2613490C3 (de) 1981-10-08
FR2306529A1 (fr) 1976-10-29
USB563722I5 (2) 1976-01-13
US3990925A (en) 1976-11-09
DE2613490A1 (de) 1976-10-14
DE2613490B2 (de) 1978-04-13
JPS5533176B2 (2) 1980-08-29

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