JPS51138347A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS51138347A
JPS51138347A JP6321175A JP6321175A JPS51138347A JP S51138347 A JPS51138347 A JP S51138347A JP 6321175 A JP6321175 A JP 6321175A JP 6321175 A JP6321175 A JP 6321175A JP S51138347 A JPS51138347 A JP S51138347A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
ferroelectric
fet
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6321175A
Other languages
Japanese (ja)
Other versions
JPS5845114B2 (en
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50063211A priority Critical patent/JPS5845114B2/en
Publication of JPS51138347A publication Critical patent/JPS51138347A/en
Publication of JPS5845114B2 publication Critical patent/JPS5845114B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:A memory device using a high reliable and ferroelectric IG - FET as a memory cell, operable with a low write and read voltage, requiring no substrate separation, operated with a single power source and capable of writing and reading with no substantial semi-selecting disturbance to a gate insulation film.
JP50063211A 1975-05-26 1975-05-26 handmade takiokusouchi Expired JPS5845114B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50063211A JPS5845114B2 (en) 1975-05-26 1975-05-26 handmade takiokusouchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50063211A JPS5845114B2 (en) 1975-05-26 1975-05-26 handmade takiokusouchi

Publications (2)

Publication Number Publication Date
JPS51138347A true JPS51138347A (en) 1976-11-29
JPS5845114B2 JPS5845114B2 (en) 1983-10-07

Family

ID=13222627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50063211A Expired JPS5845114B2 (en) 1975-05-26 1975-05-26 handmade takiokusouchi

Country Status (1)

Country Link
JP (1) JPS5845114B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01277395A (en) * 1988-04-22 1989-11-07 Ramtron Corp Method of driving ferrodielectric capacitor
JPH02113496A (en) * 1988-09-12 1990-04-25 Ramtron Corp Non-volatile memory-cell and sensing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01277395A (en) * 1988-04-22 1989-11-07 Ramtron Corp Method of driving ferrodielectric capacitor
JPH02113496A (en) * 1988-09-12 1990-04-25 Ramtron Corp Non-volatile memory-cell and sensing method thereof

Also Published As

Publication number Publication date
JPS5845114B2 (en) 1983-10-07

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