JPS51138389A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS51138389A
JPS51138389A JP50063230A JP6323075A JPS51138389A JP S51138389 A JPS51138389 A JP S51138389A JP 50063230 A JP50063230 A JP 50063230A JP 6323075 A JP6323075 A JP 6323075A JP S51138389 A JPS51138389 A JP S51138389A
Authority
JP
Japan
Prior art keywords
thyristor
heavy metal
energy level
diffusing
recombination center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50063230A
Other languages
Japanese (ja)
Inventor
Kimihiro Muraoka
Sozaburo Hotta
Masato Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP50063230A priority Critical patent/JPS51138389A/en
Publication of JPS51138389A publication Critical patent/JPS51138389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a thyristor with a low inverse voltage and a less leak current in the backward direction by diffusing a heavy metal having a deep energy level for the recombination center into a cathode area and diffusing another heavy metal having a shallow energy level for the recombination center into other areas.
JP50063230A 1975-05-27 1975-05-27 Thyristor Pending JPS51138389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50063230A JPS51138389A (en) 1975-05-27 1975-05-27 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50063230A JPS51138389A (en) 1975-05-27 1975-05-27 Thyristor

Publications (1)

Publication Number Publication Date
JPS51138389A true JPS51138389A (en) 1976-11-29

Family

ID=13223189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50063230A Pending JPS51138389A (en) 1975-05-27 1975-05-27 Thyristor

Country Status (1)

Country Link
JP (1) JPS51138389A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265466A (en) * 1988-03-11 1988-11-01 Hitachi Ltd gate turn off thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106779A (en) * 1973-02-12 1974-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106779A (en) * 1973-02-12 1974-10-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265466A (en) * 1988-03-11 1988-11-01 Hitachi Ltd gate turn off thyristor

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