JPS51138390A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51138390A
JPS51138390A JP50062002A JP6200275A JPS51138390A JP S51138390 A JPS51138390 A JP S51138390A JP 50062002 A JP50062002 A JP 50062002A JP 6200275 A JP6200275 A JP 6200275A JP S51138390 A JPS51138390 A JP S51138390A
Authority
JP
Japan
Prior art keywords
semiconductor device
high voltage
conductive material
fluorescent lamp
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50062002A
Other languages
Japanese (ja)
Inventor
Akira Yanagisawa
Ichiro Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50062002A priority Critical patent/JPS51138390A/en
Publication of JPS51138390A publication Critical patent/JPS51138390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high voltage semiconductor for use with a fluorescent lamp starter or the like by forming a semiconductor device on one surface region of a conduction type semiconductor substrate and providing an insulation film on a part of an opposite surface on which a conductive material is further deposited.
JP50062002A 1975-05-26 1975-05-26 Semiconductor device Pending JPS51138390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50062002A JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50062002A JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51138390A true JPS51138390A (en) 1976-11-29

Family

ID=13187501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50062002A Pending JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51138390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006460A1 (en) * 1994-08-19 1996-02-29 Hitachi, Ltd. Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006460A1 (en) * 1994-08-19 1996-02-29 Hitachi, Ltd. Semiconductor device

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