JPS51138393A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS51138393A
JPS51138393A JP6271175A JP6271175A JPS51138393A JP S51138393 A JPS51138393 A JP S51138393A JP 6271175 A JP6271175 A JP 6271175A JP 6271175 A JP6271175 A JP 6271175A JP S51138393 A JPS51138393 A JP S51138393A
Authority
JP
Japan
Prior art keywords
light emission
semiconductor light
emission device
junction
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6271175A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishi
Shigeo Osaka
Tsugio Kumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6271175A priority Critical patent/JPS51138393A/en
Publication of JPS51138393A publication Critical patent/JPS51138393A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To enable the connection to the electrodes without application of pressure to a double hetero-junction.
JP6271175A 1975-05-26 1975-05-26 Semiconductor light emission device Pending JPS51138393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6271175A JPS51138393A (en) 1975-05-26 1975-05-26 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6271175A JPS51138393A (en) 1975-05-26 1975-05-26 Semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS51138393A true JPS51138393A (en) 1976-11-29

Family

ID=13208169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6271175A Pending JPS51138393A (en) 1975-05-26 1975-05-26 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS51138393A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
EP0547281A1 (en) * 1991-12-17 1993-06-23 International Business Machines Corporation Recessed ridge diode structure
EP0513905B1 (en) * 1991-05-16 1996-03-13 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
EP0513905B1 (en) * 1991-05-16 1996-03-13 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device
EP0547281A1 (en) * 1991-12-17 1993-06-23 International Business Machines Corporation Recessed ridge diode structure

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